CN218415332U - Assembly type semiconductor electric nozzle based on ceramic metallization brazing sealing - Google Patents

Assembly type semiconductor electric nozzle based on ceramic metallization brazing sealing Download PDF

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Publication number
CN218415332U
CN218415332U CN202222602099.5U CN202222602099U CN218415332U CN 218415332 U CN218415332 U CN 218415332U CN 202222602099 U CN202222602099 U CN 202222602099U CN 218415332 U CN218415332 U CN 218415332U
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insulator
diameter section
shell
electrode
electric nozzle
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CN202222602099.5U
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薛继军
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Xixian New Area Tengyan Combustion Control Technology Co ltd
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Xixian New Area Tengyan Combustion Control Technology Co ltd
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Abstract

The utility model discloses an assembled semiconductor electric nozzle based on ceramic metallization braze welding sealing, which comprises a lower insulator, a lower shell, an upper insulator, a central electrode and an upper shell; the upper insulator and the lower insulator are both in tubular step structures, the small-diameter section of the upper insulator is inserted into the large-diameter section of the lower insulator, and a sealing glue layer is filled between the small-diameter section of the upper insulator and the large-diameter section of the lower insulator; the bottom end of the lower insulator is provided with a semiconductor glaze layer; the inner step surface of the upper insulator is connected with the central electrode and the upper end surface of the upper insulator is connected with the upper shell through ceramic metallization brazing. The utility model ensures that the coating positions of the metallization paste are all positioned on the end surface plane, so that the metallization paste after coating has high flatness, and the overall air tightness effect of the semiconductor electric nozzle can be ensured while the qualification rate of subsequent brazing processing is improved; and the assembled upper insulator and the assembled lower insulator can separate a ceramic metallization brazing process from a semiconductor glaze firing process, so that the two processes are prevented from being influenced with each other, and the processing efficiency of the semiconductor electric nozzle is improved.

Description

Assembly type semiconductor electric nozzle based on ceramic metallization brazing sealing
Technical Field
The utility model belongs to the technical field of, concretely relates to assembled semiconductor electric nozzle based on ceramic metallization braze welding is sealed.
Background
The semiconductor electric nozzle is one of important components in an engine ignition system, receives high-voltage pulse electric energy output by an ignition device through an ignition cable, and breaks down a discharge gap by utilizing the conductive characteristic of a semiconductor element at a discharge end to release the electric energy, generate electric sparks and ignite fuel oil and air mixed gas in a combustion chamber of an engine. The semiconductor electric nozzle is arranged on the engine shell, the discharge end extends into the combustion chamber, and the semiconductor electric nozzle can reliably work along with the change of mechanical vibration, temperature and height of the engine, so that the requirement on the air tightness of a finished product is high. In the prior art, a scheme of sealing by adopting a ceramic metallization sealing structure exists, for example, a Chinese patent invention with application number 201811378569.6, namely a small semiconductor electric nozzle structure and a processing method, but the coating area of metallization paste is large, the metallization paste is located on the outer side wall of insulating ceramic, the insulating ceramic is tubular, the outer side wall of the insulating ceramic is not flat, the coating flatness of the metallization paste cannot be ensured in actual processing, the qualification rate of a subsequent brazing process is influenced, and the processing efficiency is low. In addition, ceramic metallization and brazing are carried out at high temperature of a hydrogen furnace, and a semiconductor glaze layer of a semiconductor electric nozzle is carried out at high temperature of an oxidation furnace, so that the two important processing process environments are greatly different, and sequential working procedures cannot be realized on one ceramic part. Therefore, there is a need for a semiconductor nozzle structure with good hermeticity that reduces the difficulties of the above-mentioned processing.
SUMMERY OF THE UTILITY MODEL
The technical problem to be solved by the utility model is to provide an assembled semiconductor electric nozzle based on ceramic metallization braze welding sealing, which is convenient to operate by making the coating positions of the metallization paste all located on the end surface plane, and the metallization paste after coating has high flatness, thereby improving the qualification rate of subsequent braze welding processing and simultaneously ensuring the whole air tightness effect of the semiconductor electric nozzle; and the assembled upper insulator and the assembled lower insulator can separate a ceramic metallization brazing process and a semiconductor glaze firing process, so that the mutual influence of the two processes is avoided, the processing efficiency of the semiconductor electric nozzle can be improved, and the product yield is improved.
In order to solve the technical problem, the utility model adopts the technical scheme that: the utility model provides an assembled semiconductor electric nozzle based on ceramic metallization braze is sealed which characterized in that: the electrode comprises a lower insulator, a lower shell sleeved outside the lower insulator, an upper insulator inserted in the lower insulator and glued with the lower insulator, a central electrode penetrating through the upper insulator and the lower insulator, and an upper shell covering the top of the upper insulator;
the upper insulator and the lower insulator are both in tubular step structures, the shape of the lower shell corresponds to that of the lower insulator, the small-diameter section of the upper insulator is inserted into the large-diameter section of the lower insulator and is coaxially arranged, and a sealing adhesive layer is filled between the small-diameter section of the upper insulator and the large-diameter section of the lower insulator;
the inner step surface and the upper end surface of the upper insulator are coated with metallization paste, the bottom end of the lower insulator is a discharge end, and the discharge end is provided with a semiconductor glaze layer; the inner step surface of the upper insulator is connected with the central electrode through ceramic metallization brazing, the upper end surface of the upper insulator is connected with the upper shell through ceramic metallization brazing, and the upper shell is connected with the lower shell through fusion welding.
The above assembled semiconductor electric nozzle based on ceramic metallization brazing sealing is characterized in that: the central electrode comprises an upper electrode and a lower electrode, the bottom end of the upper electrode penetrates through the upper insulator and is connected with the lower electrode located on the small-diameter section of the lower insulator in a fusion welding mode, the outer wall of the upper electrode is attached to the inner side wall of the upper insulator, and the outer wall of the lower electrode is attached to the inner side wall of the small-diameter section of the lower insulator.
The above assembled semiconductor electric nozzle based on ceramic metallization braze welding is sealed, its characterized in that: the upper shell comprises a barrel body, an upper flange extending inwards is arranged at the top of the barrel body, a lower flange extending outwards is arranged at the bottom of the barrel body, a groove for clamping the lower flange is formed in the top of the lower shell body, and the lower flange is connected with the top of the lower shell body in a fusion welding mode.
Compared with the prior art, the utility model the advantage do: the coating positions of the metallization paste are all located on the plane of the end face, so that the operation is convenient, the flatness of the coated metallization paste is high, the qualification rate of subsequent brazing processing is improved, and the integral air tightness effect of the semiconductor electric nozzle can be ensured; and the assembled upper insulator and the assembled lower insulator can separate a ceramic metallization brazing process from a semiconductor glaze firing process, so that the two processes are prevented from being influenced with each other, the processing efficiency of the semiconductor electric nozzle can be improved, and the product yield is improved.
The technical solution of the present invention is further described in detail by the accompanying drawings and embodiments.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
Description of reference numerals:
1-lower insulator; 2-a lower shell; 3-an upper insulator;
4-sealing the adhesive layer; 5-an upper electrode; 6-a lower electrode;
7-1-cylinder; 7-2-top flange; 7-3-bottom flange.
Detailed Description
As shown in fig. 1, the present invention comprises a lower insulator 1, a lower housing 2 sleeved outside the lower insulator 1, an upper insulator 3 inserted into the lower insulator 1 and bonded thereto, a center electrode penetrating the upper insulator 3 and the lower insulator 1, and an upper housing covering the top of the upper insulator 3;
the upper insulator 3 and the lower insulator 1 are both in a tubular step structure, the lower shell 2 corresponds to the lower insulator 1 in shape, the small-diameter section of the upper insulator 3 is inserted into the large-diameter section of the lower insulator 1 and coaxially arranged, and a sealant layer 4 is filled between the small-diameter section of the upper insulator 3 and the large-diameter section of the lower insulator 1;
the inner step surface and the upper end surface of the upper insulator 3 are coated with metallization paste, the bottom end of the lower insulator 1 is a discharge end, and the discharge end is provided with a semiconductor glaze layer; the inner step surface of the upper insulator 3 is connected with the central electrode through ceramic metallization brazing, the upper end surface of the upper insulator 3 is connected with the upper shell through ceramic metallization brazing, and the upper shell is connected with the lower shell 2 through fusion welding.
In this embodiment, a through hole is formed in a portion of the bottom of the lower housing 2, which is matched with the discharge end.
In this embodiment, the sealant layer 4 is formed by assembling and compressing a high temperature resistant inorganic adhesive coated between the upper insulator 3 and the lower insulator 1.
In this embodiment, the semiconductor glaze layer is formed by firing a semiconductor glaze using titanium dioxide, tantalum pentoxide, and tin oxide as conductive materials, and the firing temperature is 1500 ℃.
In the present embodiment, the upper insulator 3 and the lower insulator 1 are each 95% alumina ceramics.
The coating positions of the metallization paste are all positioned on the plane of the end face, so that the operation is convenient, the flatness of the coated metallization paste is high, the qualification rate of subsequent brazing processing is improved, and the integral air tightness effect of the semiconductor electric nozzle can be ensured;
the assembled upper insulator 3 and the assembled lower insulator 1 can separate a ceramic metallization brazing process and a semiconductor glaze firing process, avoid the mutual influence of the two processes, and also can improve the processing efficiency of the semiconductor electric nozzle and the product percent of pass.
In this embodiment, the central electrode includes an upper electrode 5 and a lower electrode 6, the bottom end of the upper electrode 5 penetrates through the upper insulator 3 and is connected with the lower electrode 6 located at the small diameter section of the lower insulator 1 through fusion welding, the outer wall of the upper electrode 5 is attached to the inner side wall of the upper insulator 3, and the outer wall of the lower electrode 6 is attached to the inner side wall of the small diameter section of the lower insulator 1.
In this embodiment, the upper electrode 5 is a sealing alloy electrode, the lower electrode 6 is a high-temperature alloy electrode, and the electrodes made of two materials can be suitable for different working conditions of a hydrogen furnace and an oxidation furnace, so that the processing is convenient.
In this embodiment, the upper case is a sealing alloy case, and the lower case 2 is a high temperature alloy case.
In the embodiment, the upper shell comprises a cylinder body 7-1, an upper flange 7-2 extending inwards is arranged at the top of the cylinder body 7-1, a lower flange 7-3 extending outwards is arranged at the bottom of the cylinder body 7-1, a groove for clamping the lower flange 7-3 is arranged at the top of the lower shell 2, and the lower flange 7-3 is connected with the top of the lower shell 2 through welding.
In this embodiment, the width of the upper flange 7-2 is the same as the thickness of the large-diameter end of the upper insulator 3, and the upper end surface of the upper insulator 3 is connected with the lower surface of the upper flange 7-2 by brazing.
In this embodiment, the length of the cylinder 7-1 is smaller than the length of the large-diameter section of the upper insulator 3, so that the fusion welding seam between the lower flange 7-3 and the lower shell 2 avoids the bonding part between the upper insulator 3 and the lower insulator 1, and the whole air tightness of the semiconductor electric nozzle is ensured.
The utility model discloses when concrete assembly, at first with last casing, last insulator 3 and last electrode 5 carry out ceramic metallization in the hydrogen stove and braze, insulator 1 discharge end coating semiconductor glaze under, burn through the semiconductor glaze in the oxidation furnace and form the semiconductor glaze layer, be connected lower electrode 6 and 5 fusion weldings of last electrode again, pack sealing glue layer 4 and compress tightly the assembly at last insulator 3 and between lower insulator 1, at last will go up casing and 2 fusion weldings of lower casing and connect, accomplish the processing of semiconductor electric nozzle.
The above, only be the preferred embodiment of the utility model discloses a it is not right to make any restriction the utility model discloses all according to the utility model discloses any simple modification, change and the equivalent structure change of technical essence to what above embodiment was made all still belong to the technical scheme's of the utility model protection within range.

Claims (3)

1. The utility model provides an assembled semiconductor electric nozzle based on ceramic metallization braze is sealed which characterized in that: the device comprises a lower insulator (1), a lower shell (2) sleeved outside the lower insulator (1), an upper insulator (3) inserted in the lower insulator (1) and bonded with the lower insulator, a central electrode penetrating through the upper insulator (3) and the lower insulator (1), and an upper shell covering the top of the upper insulator (3);
the upper insulator (3) and the lower insulator (1) are both in a tubular step structure, the lower shell (2) corresponds to the lower insulator (1) in shape, the small-diameter section of the upper insulator (3) is inserted into the large-diameter section of the lower insulator (1) and coaxially arranged, and a sealing adhesive layer (4) is filled between the small-diameter section of the upper insulator (3) and the large-diameter section of the lower insulator (1);
the inner step surface and the upper end surface of the upper insulator (3) are coated with metallization paste, the bottom end of the lower insulator (1) is a discharge end, and the discharge end is provided with a semiconductor glaze layer; the inner step surface of the upper insulator (3) is connected with the central electrode through ceramic metallization brazing, the upper end surface of the upper insulator (3) is connected with the upper shell through ceramic metallization brazing, and the upper shell is connected with the lower shell (2) through fusion welding.
2. The assembled semiconductor electric nozzle based on the ceramic metallization braze seal according to claim 1, characterized in that: the central electrode comprises an upper electrode (5) and a lower electrode (6), the bottom end of the upper electrode (5) penetrates through the upper insulator (3) and is connected with the lower electrode (6) located on the small-diameter section of the lower insulator (1) in a fusion welding mode, the outer wall of the upper electrode (5) is attached to the inner side wall of the upper insulator (3), and the outer wall of the lower electrode (6) is attached to the inner side wall of the small-diameter section of the lower insulator (1).
3. The assembled semiconductor electric nozzle based on the ceramic metallization braze seal according to claim 1, characterized in that: the upper shell comprises a barrel body (7-1), an upper flange (7-2) extending inwards is arranged at the top of the barrel body (7-1), a lower flange (7-3) extending outwards is arranged at the bottom of the barrel body (7-1), a groove for clamping the lower flange (7-3) is formed in the top of the lower shell (2), and the lower flange (7-3) is connected with the top of the lower shell (2) in a welding mode.
CN202222602099.5U 2022-09-29 2022-09-29 Assembly type semiconductor electric nozzle based on ceramic metallization brazing sealing Active CN218415332U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202222602099.5U CN218415332U (en) 2022-09-29 2022-09-29 Assembly type semiconductor electric nozzle based on ceramic metallization brazing sealing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202222602099.5U CN218415332U (en) 2022-09-29 2022-09-29 Assembly type semiconductor electric nozzle based on ceramic metallization brazing sealing

Publications (1)

Publication Number Publication Date
CN218415332U true CN218415332U (en) 2023-01-31

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202222602099.5U Active CN218415332U (en) 2022-09-29 2022-09-29 Assembly type semiconductor electric nozzle based on ceramic metallization brazing sealing

Country Status (1)

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CN (1) CN218415332U (en)

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