CN218412790U - High-power wafer detection device based on vacuum closed container - Google Patents
High-power wafer detection device based on vacuum closed container Download PDFInfo
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- CN218412790U CN218412790U CN202221649074.4U CN202221649074U CN218412790U CN 218412790 U CN218412790 U CN 218412790U CN 202221649074 U CN202221649074 U CN 202221649074U CN 218412790 U CN218412790 U CN 218412790U
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Abstract
The utility model discloses a high power wafer detection device based on in vacuum closed container, include: a vacuum sealed container; a worktable arranged in the vacuum closed container and used for placing the wafer; and the detection module is arranged in the vacuum closed container and used for detecting the wafer placed on the workbench. In the scheme, the high-power test of the wafer is carried out in the vacuum closed container, so that the high-voltage arc discharge effect is prevented in a vacuum mode, and the problem caused by soaking the wafer in insulating oil is avoided.
Description
Technical Field
The utility model relates to a power semiconductor device technical field, in particular to high power wafer detection device based on in the vacuum sealed container.
Background
In recent years, under the pressure of energy and environment protection, a new energy automobile has become the development direction of future automobiles, but the development of the new energy automobile does not leave a power semiconductor device, and under the premise of controlling the cost of the automobile, in order to support the demand of quick charging and support higher power density and high reliability, the power semiconductor device is required to have the capability of continuously and stably working under high voltage and high power bearing capacity, so that the high-power and high-voltage power semiconductor device needs to be researched and developed, and the successful loading and use of the power semiconductor device can not leave the high-power and high-voltage pulse test of a semiconductor wafer, in the test process, an extremely high voltage pulse is introduced to a power chip electrode through a conductor, if the treatment is not good, arc discharge can be generated among path conductors in the process of introducing the extremely high voltage pulse due to high voltage, and the arc discharge needs to be avoided to the utmost extent in the test process.
In order to solve the arc discharge effect between high-voltage path conductors, the conventional high-power wafer detection mainly adopts an insulating oil immersion scheme, and the scheme takes the solution of preventing the arc effect of a high-voltage transformer as a reference to immerse a wafer to be detected in insulating oil. However, this approach has the following disadvantages:
1. in the process of replacing wafers and other processes, the insulating oil can repeatedly contact oxygen, the insulating oil can be oxidized under the influence of an optical field, an electric field and temperature, and even impurities can be brought in, so that the property of the insulating oil is easily deteriorated, and the recurrence of an arc effect is caused;
2. in order to prevent the recurrence of the arc effect caused by the deterioration of the properties of the insulating oil, the insulating oil needs to be detected regularly, and the oxidation and impurities of the insulating oil need special equipment or mechanisms, so that the insulating oil needs to be replaced frequently in order to ensure the effect of the insulating oil;
3. after the wafer is soaked in the insulating oil, the step of cleaning the wafer needs to be added, so that the process complexity is increased.
SUMMERY OF THE UTILITY MODEL
In view of this, the utility model provides a high power wafer detection device based on in the vacuum sealed container, through the high power test of carrying out the wafer in the vacuum sealed container to the mode of adopting the vacuum prevents the high-voltage arc discharge effect, thereby avoids the wafer to soak the problem that insulating oil brought.
In order to achieve the above object, the utility model provides a following technical scheme:
a high-power wafer detection device based on a vacuum closed container comprises:
a vacuum sealed container;
the workbench is arranged in the vacuum closed container and used for placing the wafer;
and the detection module is arranged in the vacuum closed container and is used for detecting the wafer placed on the workbench.
Preferably, the vacuum-tight container comprises a vacuum-tight cavity and an air pump;
the vacuum sealed cavity is provided with an inert gas inlet capable of flowing in a single direction, and is provided with a gas outlet connected with a gas inlet of the gas pump; the workbench and the detection module are arranged in the vacuum closed cavity.
Preferably, the vacuum hermetic container further comprises:
and the leak detector is arranged on the inner wall of the vacuum closed cavity.
Preferably, the probing module comprises a probe arm, a probe and a wafer tray;
the wafer tray is arranged at the top of the workbench and used for placing the wafer and providing high voltage for the wafer; the probe is arranged on the probe arm and is used for being connected with the top of the wafer and providing low voltage for the wafer.
Preferably, the detection module further comprises:
and the probe platform is arranged between the probe arm and the wafer tray and is provided with a through hole matched with the probe.
Preferably, the method further comprises the following steps:
set up in the vacuum airtight cavity, and connect wafer tray with temperature regulation platform between the top of workstation.
Preferably, the method further comprises the following steps:
and the sealing connector penetrates through the wall of the vacuum closed container and is used for penetrating through the electrical connecting wire of the detection module.
Preferably, the workbench is a translation lifting workbench.
Preferably, the translation lifting table comprises an XY-direction moving mechanism and a Z-direction moving mechanism;
the Z-direction moving mechanism is arranged at the top of the movable end of the XY-direction moving mechanism, and the top of the movable end of the Z-direction moving mechanism is used for placing the wafer.
Preferably, the XY-direction moving mechanism and/or the Z-direction moving mechanism includes a lead screw motor assembly.
According to the above technical scheme, the utility model provides a high power wafer detection device based on in the vacuum sealed container, through the high power test of carrying out the wafer in the vacuum sealed container to adopt the vacuum mode to prevent the high-voltage arc discharge effect, thereby avoid the wafer to soak the problem that insulating oil brought.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a high-power wafer detecting device based on a vacuum sealed container according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a detection module structure provided by the embodiment of the present invention.
The device comprises a vacuum sealed cavity 1, an air pump 2, an inert gas inlet 3, an air outlet 4, a leak detector 5, a probe arm 6, a probe 7, a wafer tray 8, a probe table 9, a temperature adjusting table 10, a sealing connector 11, an XY-direction moving mechanism 12, a Z-direction moving mechanism 13 and a wafer 14.
Detailed Description
The utility model discloses a high power wafer detection device based on in vacuum closed container, it adopts a brand-new vacuum mode to prevent high-voltage arc discharge effect, realizes the high power test of semiconductor wafer chip in being close vacuum environment's closed container to avoid the wafer to soak the shortcoming that insulating oil brought.
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts all belong to the protection scope of the present invention.
The embodiment of the utility model provides a high power wafer detection device based on in vacuum closed container, as shown in figure 1, include:
a vacuum sealed container;
a worktable arranged in the vacuum closed container and used for placing the wafer 14;
and the detection module is arranged in the vacuum closed container and is used for detecting the wafer 14 placed on the workbench.
It should be noted that the design principle of the scheme is based on the pasteur law, the vacuum mode is adopted to prevent the high-voltage arc discharge effect in the wafer testing process, and the problems of arc effect recurrence, insulating oil detection and replacement, wafer insulating oil cleaning and the like caused by insulating oil oxidation and deterioration caused by the fact that the wafer is soaked in the insulating oil can be effectively avoided. In addition, the high-power test of the wafer is arranged in the vacuum closed container, so that the breakdown arc voltage is improved by a smaller electrode distance, and the high-voltage wafer test is met.
According to the above technical scheme, the embodiment of the utility model provides a based on high power wafer detection device in the vacuum sealed container, through carry out the high power test of wafer in the vacuum sealed container to adopt the vacuum mode to prevent high-voltage arc discharge effect, thereby avoid the wafer to soak the problem that insulating oil brought.
In the scheme, based on Bashen's law, it is necessary to ensure that the breakdown voltage of the dielectric gas between the high-voltage path conductors is far greater than the wafer test voltage in order to prevent the occurrence of the arcing effect in the high-vacuum environment. For example, if the wafer test voltage is 1KV, the breakdown voltage of the dielectric gas between the high-voltage path conductors in the vacuum hermetic container needs to be controlled to be greater than 10KV. Further, it is known from barshen's law that the breakdown voltage of a common gas increases with an increase in the degree of vacuum in a high vacuum environment when the electrode spacing is constant. In order to increase the breakdown voltage of the dielectric gas between the high-voltage path conductors; accordingly, as shown in fig. 1, the vacuum sealed container includes a vacuum sealed chamber 1 and an air pump 2;
the vacuum closed cavity 1 is provided with an inert gas inlet 3 capable of flowing in a single direction, so that the inert gas can only be filled into the vacuum closed cavity 1 in a single direction, and the vacuum closed cavity 1 is provided with a gas outlet 4 connected with a gas inlet of the gas pump 2; the workbench and the detection module are both arranged in the vacuum closed cavity 1. According to the scheme, nitrogen is filled into the vacuum sealed cavity 1 through the inert gas inlet 3 before the wafer test, and then the pressure in the vacuum sealed cavity 1 is reduced to 10 < -4 > Torr through the air pump 2, so that the breakdown voltage of residual nitrogen between high-voltage path conductors is increased to be far more than 10KV. In addition, the scheme fills nitrogen into the vacuum closed cavity 1, and is also favorable for preventing the wafer 14 from being oxidized under high-temperature test.
Further, in order to prevent the vacuum sealed container from vacuum leakage, it is necessary to perform leakage detection on the vacuum sealed container; accordingly, as shown in fig. 1, the vacuum hermetic container further includes:
and the leak detector 5 is arranged on the inner wall of the vacuum closed cavity 1.
Specifically, as shown in fig. 1 and 2, the probing module includes a probe arm 6, a probe 7, and a wafer tray 8;
the wafer tray 8 is arranged on the top of the workbench and is used for placing the wafer 14 and providing high voltage for the wafer; the probes 7 are disposed on the probe arm 6, and are used to connect with and provide a low voltage to the top of the wafer 14. The detection module of this scheme so designs, has characteristics such as simple structure, test are convenient. In addition, in order to ensure that the wafer can be tested normally in a high vacuum environment, the pitch of the power-up pads, power-up electrodes and the like of the wafer chips needs to be controlled. In order to avoid arcing, it is necessary to ensure that no voltage difference is generated within 5mm around the electrically charged members such as the probes 7, the energizing circuit, the wafer tray 8, and the wafer 14.
Further, in order to avoid the influence of the high temperature of the wafer tray 8 on the probe arm 6, a blocking table needs to be additionally arranged between the wafer tray and the probe arm; accordingly, as shown in fig. 1, the detection module further includes:
a probe station 9 is arranged between the probe arm 6 and the wafer tray 8 and is provided with through holes for matching with the probes 7.
Still further, similarly, in order to avoid the influence of the high temperature of the wafer tray 8 on the top of the worktable; correspondingly, as shown in fig. 1, the embodiment of the present invention provides a high power wafer detecting device based on inside of a vacuum sealed container, further comprising:
and the temperature adjusting table 10 is arranged in the vacuum closed cavity 1 and connected between the wafer tray 8 and the top of the workbench. Namely, the temperature conducted from the wafer tray 8 to the top of the worktable is adjusted by the temperature adjusting table 10, so that the top of the worktable is prevented from being affected by high temperature.
In the scheme, in order to ensure that the wafer 14 can be normally powered up in a vacuum environment, an electrical connection wire of the detection module needs to be led into the vacuum closed container from an external high-voltage power supply, but in order to ensure the vacuum degree of the vacuum closed container, the electrical connection wire of the detection module needs to be subjected to sealing threading treatment; correspondingly, as shown in fig. 1, the embodiment of the present invention provides a high power wafer detecting device based on inside of a vacuum sealed container, further comprising:
and a sealing connector 11 penetrating through the wall of the vacuum sealed container and used for passing through the electric connecting wire of the detection module. In addition, in order to avoid the abnormal conduction of the electrical connection wires with the vacuum sealed container in the energized state, the sealed connector 11 needs to be made of a high-insulation low-vacuum outgassing material. Of course, as shown in fig. 1, the present solution can also perform probing of two wafers 14. Wherein the number of probe arms 6, probes 7 required to be used is two.
Specifically, to facilitate better detection of the wafer 14, the stage is a translation lift stage.
Further, as shown in fig. 1, the translation lifting table includes an XY-direction moving mechanism 12 and a Z-direction moving mechanism 13; namely, the XY-direction moving mechanism is a two-dimensional translation mechanism;
the Z-direction moving mechanism 13 is arranged on the top of the movable end of the XY-direction moving mechanism 12, and the top of the movable end of the Z-direction moving mechanism 13 is used for placing the wafer 14. Wherein, the temperature adjusting platform is arranged on the top of the movable end of the Z-direction moving mechanism 13, and the wafer tray 8 is arranged on the top of the temperature adjusting platform. In addition, this scheme also need avoid the circuit to switch on when setting up parts such as probe, wafer tray in vacuum seal cavity 1, and accessible structure carries out electrical isolation with probe and probe arm to and wafer tray and work slip table, so that safeguard equipment, surveyed wafer chip and tester's safety under the high voltage condition. The structural part can be made of high-insulation, high-heat-conduction and low-vacuum air-release materials, and the thickness of the structural part is ensured to be more than 5 mm.
Still further, the XY-direction moving mechanism 12 and/or the Z-direction moving mechanism 13 includes a lead screw motor assembly. Wherein, translation elevating platform adopts lead screw motor subassembly, has simple structure, and characteristics such as motion is steady reliable. The XY-direction moving mechanism 12 includes an X-direction moving mechanism and a Y-direction moving mechanism, the Y-direction moving mechanism is provided on the top of the movable end of the X-direction moving mechanism, and the Z-direction moving mechanism 13 is provided on the top of the movable end of the Y-direction moving mechanism.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (9)
1. A high-power wafer detection device based on a vacuum closed container is characterized by comprising:
a vacuum sealed container;
a worktable which is arranged in the vacuum closed container and is used for placing a wafer (14);
the detection module is arranged in the vacuum closed container and used for detecting the wafer (14) placed on the workbench;
the vacuum closed container comprises a vacuum closed cavity (1) and an air pump (2);
the vacuum sealed cavity (1) is provided with an inert gas inlet (3) capable of flowing in a single direction, and the vacuum sealed cavity (1) is provided with a gas outlet (4) connected with a gas inlet of the gas pump (2); the workbench and the detection module are arranged in the vacuum closed cavity (1).
2. The vacuum containment based high power wafer probing apparatus of claim 1 wherein said vacuum containment further comprises:
and the leak detector (5) is arranged on the inner wall of the vacuum closed cavity (1).
3. The high power wafer probing device in vacuum based closed container according to claim 1, wherein said probing module comprises a probe arm (6), a probe (7) and a wafer tray (8);
the wafer tray (8) is arranged at the top of the workbench and is used for placing the wafer (14) and providing high voltage for the wafer; the probe (7) is arranged on the probe arm (6) and is used for connecting with the top of the wafer (14) and providing low voltage for the wafer.
4. The vacuum-based high power wafer probing apparatus in a hermetic container as claimed in claim 3 wherein the probing module further comprises:
the probe platform (9) is arranged between the probe arm (6) and the wafer tray (8) and is provided with a through hole matched with the probe (7).
5. The vacuum-based high power wafer probing apparatus in a hermetic container as claimed in claim 3 further comprising:
and the temperature adjusting table (10) is arranged in the vacuum closed container and connected between the wafer tray (8) and the top of the workbench.
6. The vacuum-based high power wafer probing apparatus in a hermetic container as claimed in claim 1 further comprising:
and the sealing connector (11) penetrates through the wall of the vacuum closed container and is used for penetrating through the electrical connecting wire of the detection module.
7. The vacuum-based high power wafer probing apparatus in a sealed container as claimed in claim 1 wherein said stage is a translating and elevating stage.
8. The high power wafer probe device in vacuum-based closed container as claimed in claim 7, wherein the translation elevating stage comprises an XY-direction moving mechanism (12) and a Z-direction moving mechanism (13);
the Z-direction moving mechanism (13) is arranged at the top of the movable end of the XY-direction moving mechanism (12), and the top of the movable end of the Z-direction moving mechanism (13) is used for placing the wafer (14).
9. The high power wafer probing device within a vacuum based containment of claim 8 wherein the XY-movement mechanism (12) and/or the Z-movement mechanism (13) comprises a lead screw motor assembly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221649074.4U CN218412790U (en) | 2022-06-29 | 2022-06-29 | High-power wafer detection device based on vacuum closed container |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221649074.4U CN218412790U (en) | 2022-06-29 | 2022-06-29 | High-power wafer detection device based on vacuum closed container |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218412790U true CN218412790U (en) | 2023-01-31 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202221649074.4U Active CN218412790U (en) | 2022-06-29 | 2022-06-29 | High-power wafer detection device based on vacuum closed container |
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| CN (1) | CN218412790U (en) |
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- 2022-06-29 CN CN202221649074.4U patent/CN218412790U/en active Active
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