CN218404501U - Epitaxial reaction chamber - Google Patents

Abstract

The utility model discloses an epitaxial reaction chamber, including heat preservation casing and columniform heat-generating body, the heat preservation casing includes first casing and second casing, and first casing and second casing cooperation form the heat preservation chamber, and the heat preservation intracavity is located to the heat-generating body, and the inboard of first casing and/or second casing is equipped with spacing recess, and the outside of heat-generating body is equipped with can with spacing recess complex spacing arch. The epitaxial reaction chamber disclosed by the utility model wraps the cylindrical heating element through the heat preservation shell so as to realize heat preservation of the heating element; the first shell and the second shell are matched to form a heat insulation cavity, so that the structure of the heat insulation shell is simplified, a connecting gap is reduced, and heat can be stored conveniently; through the cooperation of the limiting bulges and the limiting grooves, the heating body is limited to rotate relatively in the heat insulation cavity, the change of a heat radiation path is avoided, the influence on the distribution of the reaction room temperature field is reduced, and the convenience of installation and leveling of the reaction chamber and the uniqueness of installation are improved.

Description

Epitaxial reaction chamber

Technical Field

The utility model relates to a semiconductor equipment technical field, concretely relates to epitaxial reaction chamber.

Background

Bulk single crystal materials are difficult to meet with the growing requirements for various semiconductor device fabrication, and particularly, it is becoming more and more difficult to control the grown-in defects of single crystals in advanced processes, so epitaxial wafers are increasingly used, and SiC substrates, which are wide bandgap materials, must be subjected to an epitaxial process before entering the device fabrication stage.

The epitaxial furnace is a key device for preparing epitaxial wafers. For an epitaxial furnace, a clean reaction chamber with uniform temperature and gas flow distribution is the basis for preparing epitaxial wafers with uniform doping concentration, low defect density and high quality, and a stable reaction chamber is a necessary prerequisite for the batch production of the epitaxial wafers. Factors influencing the uniformity, cleanliness and stability of temperature distribution in the reaction chamber are many, wherein the structure, surface material, position and the like of a heat-insulating graphite cavity of the reaction chamber are important parameters, and particularly, during the SiC epitaxial process, factors such as whether a graphite heating element of the reaction chamber is horizontal, whether the relative position of the graphite heating element and an outer heat-insulating layer is changed, the wrapping property of the outer heat-insulating layer and the like directly influence the distribution of an internal temperature field in the reaction chamber, so that a process result is greatly influenced.

At present, in order to preserve heat of a reaction chamber, an outer heat preservation layer composed of graphite carbon felt is generally sleeved on the outer side of a graphite heating element, and then heat preservation end plates are respectively arranged at two ends of the graphite heating element so as to preserve heat of the heating element. The graphite heating body generally selects a horizontally placed cylindrical heating body, the area near the horizontal interface of two halves of cylinders of the cylindrical graphite heating body is an area with lower temperature, the outer heat-insulating layer comprises a first heat-insulating layer and a second heat-insulating layer which are arc-shaped, the first heat-insulating layer and the second heat-insulating layer are mutually matched to form a hollow cylinder, and a matching gap between the first heat-insulating layer and the second heat-insulating layer can be used as a heat-radiating channel of the graphite heating body. Specifically, the heat of the heating body is mainly dissipated from the horizontal interface of the two semicylinders through the matching gap, and the heat dissipation path can be changed by adjusting the position of the matching gap between the first heat-insulating layer and the second heat-insulating layer, so that the temperature field distribution of the reaction chamber is adjusted. However, this structure has several problems:

1. in the process of installation or use, the graphite heating body can rotate relatively in the outer heat-insulating layer, so that the heat dissipation path is changed, and the room temperature field distribution of the reaction is influenced.

2. The heat preservation end plate and the outer heat preservation layer are mutually independent spare parts, have a week gap between the two, and the partial heat of heat-generating body can follow this gap effluvium, is unfavorable for thermal preservation, and the heat preservation effect is relatively poor.

SUMMERY OF THE UTILITY MODEL

The to-be-solved technical problem of the utility model is to overcome prior art not enough, provide one kind and can restrict the heat-generating body and take place the relative rotation in the heat preservation intracavity, avoid the epitaxial reaction chamber that the heat dissipation route changes.

In order to solve the technical problem, the utility model adopts the following technical scheme:

the utility model provides an epitaxial reaction chamber, includes heat preservation casing and columniform heat-generating body, the heat preservation casing includes first casing and second casing, first casing with the cooperation of second casing forms the heat preservation chamber, the heat-generating body is located the heat preservation intracavity, first casing and/or the inboard of second casing is equipped with spacing recess, the outside of heat-generating body be equipped with can with spacing arch of spacing recess complex.

As a further improvement of the above technical solution: the first casing includes first end plate and first heat preservation, first end plate with first heat preservation integrated into one piece and be the L type and arrange, the second casing includes second end plate and second heat preservation, the second end plate with second heat preservation integrated into one piece and be the L type and arrange, spacing recess is located first heat preservation and/or the inboard of second heat preservation.

As a further improvement of the above technical solution: the first housing and the second housing are engaged by a step.

As a further improvement of the above technical solution: the first heat preservation layer and the second heat preservation layer are both arc-shaped heat preservation layers, and the central angle corresponding to the first heat preservation layer is equal to the central angle corresponding to the second heat preservation layer.

As a further improvement of the above technical solution: the first heat preservation layer and the second heat preservation layer are both arc-shaped heat preservation layers, and the central angle corresponding to the first heat preservation layer is larger than the central angle corresponding to the second heat preservation layer.

As a further improvement of the above technical solution: and reinforcing ribs are arranged on the outer sides of the first heat-insulating layer and/or the second heat-insulating layer.

As a further improvement of the above technical solution: the heating body comprises a first semi-cylindrical split body and a second semi-cylindrical split body, a supporting plate is arranged between the first split body and the second split body, the first shell is located on the outer side of the first split body, the second shell is located on the outer side of the second split body, and the limiting protrusion is arranged on the first split body and/or the second split body.

As a further improvement of the above technical solution: the support plate is provided with two support plates which are respectively arranged on two sides of the first split body, so that a gas channel is formed between the first split body and the second split body, and the first split body is provided with an epitaxial wafer placing groove.

As a further improvement of the above technical solution: the first split body and the second split body are graphite heating bodies, and the supporting plate is a SiC plate.

As a further improvement of the above technical solution: the heating element is a graphite heating element, the heat preservation shell is a graphite carbon felt shell, and the graphite heating element and the graphite carbon felt shell are both provided with SiC coatings.

Compared with the prior art, the beneficial effects of the utility model reside in that:

1. the epitaxial reaction chamber disclosed by the utility model wraps the cylindrical heating element through the heat preservation shell so as to realize heat preservation of the heating element; the first shell and the second shell are matched to form a heat insulation cavity, so that the structure of the heat insulation shell is simplified, a connecting gap is reduced, and heat can be stored conveniently; through the cooperation of the limiting bulges and the limiting grooves, the heating body is limited to rotate relatively in the heat insulation cavity, the change of a heat radiation path is avoided, the influence on the distribution of the reaction room temperature field is reduced, and the convenience of installation and leveling of the reaction chamber and the uniqueness of installation are improved.

2. The utility model discloses an epitaxial reaction chamber, furtherly, through with first end plate and first heat preservation integrated into one piece, with second end plate and second heat preservation integrated into one piece, make behind first casing and the cooperation of second casing formation heat preservation chamber, the heat preservation chamber has four gaps altogether, be two gaps that form between first heat preservation and the second heat preservation respectively, the gap that forms between first heat preservation and the second end plate, and the gap that forms between second heat preservation and the first end plate, the connection gap has further been reduced, be favorable to thermal saving, the reinforcing heat preservation effect.

3. The utility model discloses an epitaxial reaction chamber further through the central angle that changes first heat preservation and second heat preservation and correspond in order to change its area of surrounding surface to change the heat dissipation route of heat-generating body, distribute with the temperature field of adjusting the reaction chamber.

Drawings

Fig. 1 is a schematic view of a three-dimensional structure at a first viewing angle of the epitaxial reactor of the present invention.

Fig. 2 is a schematic perspective view of the epitaxial reactor at a second viewing angle.

Fig. 3 is a schematic structural diagram of the first housing of the present invention.

Fig. 4 is a schematic structural diagram of the second housing of the present invention.

Fig. 5 is a schematic structural view of the middle heating element of the present invention.

FIG. 6 is a schematic cross-sectional view of an epitaxial reactor according to an embodiment of the present invention.

FIG. 7 is a schematic cross-sectional view of another embodiment of an epitaxial reactor of the present invention.

The reference numerals in the figures denote: 10. a heating element; 11. a first split body; 111. an epitaxial wafer placing groove; 12. a second body; 13. a support plate; 14. a gas channel; 15. a limiting bulge; 20. a heat-insulating shell; 21. a first housing; 211. a first end plate; 212. a first insulating layer; 213. a source gas inlet; 214. a temperature measuring hole; 215. a purge gas inlet hole; 22. a second housing; 221. a second end plate; 222. a second insulating layer; 223. an exhaust gas discharge hole; 224. a purge gas exhaust hole; 23. a limiting groove; 24. and (5) reinforcing ribs.

Detailed Description

The invention is described in further detail below with reference to the drawings and specific examples.

As used in this disclosure and in the claims, the terms "a," "an," "the," and/or "the" are not intended to be inclusive in the singular, but rather are inclusive in the plural unless the context clearly dictates otherwise. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. Similarly, the word "comprising" or "comprises", and the like, means that the element or item preceding the word comprises the element or item listed after the word and its equivalent, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect.

Fig. 1 to fig. 6 show an embodiment of the present invention, the epitaxial reaction chamber of this embodiment, including heat preservation casing 20 and columniform heat-generating body 10, heat preservation casing 20 includes first casing 21 and second casing 22, and first casing 21 and second casing 22 cooperate and form the heat preservation chamber, and heat-generating body 10 locates the heat preservation intracavity, and preferably, the inboard of first casing 21 and second casing 22 all is equipped with spacing recess 23, and the outside of heat-generating body 10 is equipped with can with spacing protruding 15 of spacing recess 23 complex.

The epitaxial reaction chamber wraps the cylindrical heating element 10 through the heat preservation shell 20 so as to realize heat preservation of the heating element 10; the first shell 21 and the second shell 22 are matched to form a heat preservation cavity, so that the structure of the heat preservation shell 20 is simplified, connecting gaps are reduced, and heat can be preserved conveniently; the limiting protrusion 15 is matched with the limiting groove 23, so that the heating body 10 is limited to relatively rotate in the heat insulation cavity, the change of a heat radiation path is avoided, the influence on the distribution of a reaction room temperature field is reduced, and the convenience of installation and leveling of the reaction chamber and the uniqueness of installation are improved. In other embodiments, the limiting groove 23 is provided only on the inner side of the first case 21 or the second case 22, and the rotation of the heating element 10 can be limited as well; alternatively, the stopper groove 23 is provided on the outer side of the heating element 10, and the stopper protrusion 15 is provided on the inner side of the first case 21 and the second case 22, so that the same technical effects can be obtained.

In this embodiment, the first housing 21 includes a first end plate 211 and a first thermal insulation layer 212, the first end plate 211 and the first thermal insulation layer 212 are integrally formed and arranged in an L shape, the second housing 22 includes a second end plate 221 and a second thermal insulation layer 222, the second end plate 221 and the second thermal insulation layer 222 are integrally formed and arranged in an L shape, so that after the first housing 21 and the second housing 22 are matched to form a thermal insulation cavity, the thermal insulation cavity has four gaps, which are two gaps formed between the first thermal insulation layer 212 and the second thermal insulation layer 222, a semicircular gap formed between the first thermal insulation layer 212 and the second end plate 221, and a semicircular gap formed between the second thermal insulation layer 222 and the first end plate 211, further reducing the connection gap, facilitating the storage of heat, and enhancing the thermal insulation effect. Preferably, the limiting groove 23 is formed inside the first and second heat insulating layers 212 and 222 to facilitate connection with the heating body 10 to limit rotation thereof.

In this embodiment, first casing 21 and second casing 22 pass through the step cooperation, and convenient location avoids first casing 21 and second casing 22 to take place the dislocation to reinforcing heat preservation effect.

In this embodiment, the first heat insulating layer 212 and the second heat insulating layer 222 are both arc heat insulating layers, as shown in fig. 6, a central angle corresponding to the first heat insulating layer 212 is equal to a central angle corresponding to the second heat insulating layer 222, that is, the arc lengths of the first heat insulating layer 212 and the second heat insulating layer 222 are equal, the central angles corresponding to the first heat insulating layer 212 and the second heat insulating layer 222 are both 180 ° and are matched to form a hollow cylinder, and at this time, the heat dissipation channel of the heating element 10 and the horizontal interface of the heating element 10 are in the same plane. In other embodiments, as shown in fig. 7, a central angle corresponding to the first heat insulating layer 212 is greater than a central angle corresponding to the second heat insulating layer 222, that is, an arc length of the first heat insulating layer 212 is greater than an arc length of the second heat insulating layer 222, and at this time, the heat dissipation channel of the heating element 10 is located at the top of the heating element 10. The area of the surrounding surface is changed by changing the central angles corresponding to the first heat-insulating layer 212 and the second heat-insulating layer 222, so that the heat radiation path of the heating element 10 is changed, and the temperature field distribution of the reaction chamber is adjusted.

In this embodiment, the outside of second heat preservation 222 is equipped with strengthening rib 24, and strengthening rib 24 is the semicircular arch and is equipped with many, and many strengthening ribs 24 are arranged along the periphery interval of second heat preservation 222 to prevent the second heat preservation 222 from being backed up by inside hot gas flow and the emergence of the gap grow heat dissipation phenomenon that leads to, the radius of second heat preservation 222 top strengthening rib 24 is greater than the radius of bottom strengthening rib 24. In other embodiments, the stiffener 24 can be disposed outside of both the first insulation layer 212 and the second insulation layer 222 to prevent them from being pushed open by the hot air flow.

In this embodiment, the heating element 10 includes a first half body 11 and a second half body 12 having a semi-cylindrical shape, a support plate 13 is provided between the first half body 11 and the second half body 12, a first case 21 is provided outside the first half body 11, a second case 22 is provided outside the second half body 12, and a limit protrusion 15 is provided on the first half body 11 and the second half body 12. The first and second sub-bodies 11 and 12 are separated by the support plate 13, so that they are easily disassembled and cleaned. The position-limiting protrusions 15 of the respective division bodies are engaged with the position-limiting grooves 23, thereby limiting the positions of the first division body 11 and the second division body 12.

In this embodiment, two support plates 13 are provided and are respectively disposed on two sides of the first body 11, so that a gas channel 14 is formed between the first body 11 and the second body 12, and the first body 11 is provided with an epitaxial wafer placement groove 111. The first and second sub-bodies 11 and 12 are separated by two support plates 13, and an epitaxial wafer may be placed in the epitaxial wafer placement groove 111 for reaction.

In this embodiment, the first and second divided bodies 11 and 12 are both graphite heating elements, and the support plate 13 is a SiC plate. The first sub-body 11 and the second sub-body 12 are separated by the SiC plate, so that the direct contact between the first sub-body and the second sub-body is avoided and the sparking phenomenon is avoided.

In this embodiment, the heating element 10 is a graphite heating element, the heat-insulating casing 20 is a graphite carbon felt casing, and SiC coatings are respectively disposed on the graphite heating element and the graphite carbon felt casing. The SiC coating is preferably a coating with the thickness of 100 mu m, so that the insulativity is enhanced, the phenomenon that the interconnection part of all parts is ignited when heating is avoided, and meanwhile, the influence of the graphite carbon felt shell on the cleanliness of the reaction chamber due to the absorption or release of impurity gases is avoided.

In this embodiment, the first end plate 211 is provided with a source gas inlet hole 213, a temperature measuring hole 214 and a purge gas inlet hole 215, the source gas inlet hole 213 is located in the middle of the first end plate 211 and corresponds to the gas channel 14 between the first and second components 11 and 12, the temperature measuring hole 214 is used for measuring the temperature of the reaction chamber, and the two purge gas inlet holes 215 are respectively used for blowing gas into the first and second components 11 and 12. The second end plate 221 is provided with a tail gas discharge hole 223 and a purge gas discharge hole 224, the tail gas discharge hole 223 is located in the middle of the second end plate 221 and corresponds to the gas channel 14 between the first and second sub-bodies 11 and 12 and can be used as an inlet and outlet of an epitaxial wafer, and two purge gas discharge holes 224 are provided and correspond to the positions of the purge gas inlet holes 215, respectively.

Although the present invention has been described with reference to the preferred embodiments, it is not intended to be limited thereto. The technical solution of the present invention can be used by anyone skilled in the art to make many possible variations and modifications, or to modify equivalent embodiments, without departing from the scope of the present invention, using the technical content disclosed above. Therefore, any simple modification, equivalent change and modification made to the above embodiments by the technical entity of the present invention should fall within the protection scope of the technical solution of the present invention.

Claims (10)

1. An epitaxial reaction chamber comprises a heat-insulating shell (20) and a cylindrical heating body (10), and is characterized in that: the heat preservation casing (20) include first casing (21) and second casing (22), first casing (21) with second casing (22) cooperation forms the heat preservation chamber, heat-generating body (10) are located the heat preservation intracavity, first casing (21) and/or the inboard of second casing (22) is equipped with spacing recess (23), the outside of heat-generating body (10) be equipped with can with spacing protruding (15) of spacing recess (23) complex.

2. The epitaxial reactor of claim 1, wherein: first casing (21) include first end plate (211) and first heat preservation (212), first end plate (211) with first heat preservation (212) integrated into one piece and be the L type and arrange, second casing (22) include second end plate (221) and second heat preservation (222), second end plate (221) with second heat preservation (222) integrated into one piece and be the L type and arrange, spacing recess (23) are located first heat preservation (212) and/or the inboard of second heat preservation (222).

3. The epitaxial reactor of claim 2, wherein: the first housing (21) and the second housing (22) are fitted by a step.

4. The epitaxial reactor of claim 2, wherein: the first heat-preservation layer (212) and the second heat-preservation layer (222) are both arc-shaped heat-preservation layers, and the central angle corresponding to the first heat-preservation layer (212) is equal to the central angle corresponding to the second heat-preservation layer (222).

5. The epitaxial reactor of claim 2, wherein: the first heat-insulating layer (212) and the second heat-insulating layer (222) are both arc-shaped heat-insulating layers, and the central angle corresponding to the first heat-insulating layer (212) is larger than the central angle corresponding to the second heat-insulating layer (222).

6. The epitaxial reactor of claim 2, wherein: and reinforcing ribs (24) are arranged on the outer sides of the first heat-insulating layer (212) and/or the second heat-insulating layer (222).

7. Epitaxial reaction chamber according to anyone of claims 1 to 6, characterized in that: the heating body (10) comprises a first semi-cylindrical split body (11) and a second semi-cylindrical split body (12), a supporting plate (13) is arranged between the first split body (11) and the second split body (12), the first shell (21) is located on the outer side of the first split body (11), the second shell (22) is located on the outer side of the second split body (12), and the limiting protrusion (15) is arranged on the first split body (11) and/or the second split body (12).

8. The epitaxial reactor of claim 7, wherein: the two supporting plates (13) are arranged on two sides of the first split body (11) respectively, so that a gas channel (14) is formed between the first split body (11) and the second split body (12), and an epitaxial wafer placing groove (111) is formed in the first split body (11).

9. The epitaxial reactor of claim 8, wherein: the first sub-body (11) and the second sub-body (12) are graphite heating bodies, and the support plate (13) is a SiC plate.

10. Epitaxial reaction chamber according to anyone of claims 1 to 6, characterized in that: the heating element (10) is a graphite heating element, the heat preservation shell (20) is a graphite carbon felt shell, and the graphite heating element and the graphite carbon felt shell are both provided with SiC coatings.

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