CN218331699U - Car rule semiconductor power module short circuit test structure - Google Patents
Car rule semiconductor power module short circuit test structure Download PDFInfo
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- CN218331699U CN218331699U CN202222282663.XU CN202222282663U CN218331699U CN 218331699 U CN218331699 U CN 218331699U CN 202222282663 U CN202222282663 U CN 202222282663U CN 218331699 U CN218331699 U CN 218331699U
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Abstract
The utility model discloses a car rule semiconductor power module short circuit test structure, include: the positive electrode of the first test power supply is connected with the grid electrode of the half-bridge IGBT on the tested road of the vehicle-scale semiconductor power module and provides a first voltage; an emitter of the half-bridge IGBT on a tested road of the vehicle-scale semiconductor power module is connected with GND; the second test power supply is connected with the cathode of the first diode and the anode of the second diode; the anode of the first diode is connected with the grid of the half-bridge IGBT under the tested road of the vehicle-scale semiconductor power module through a first resistor, and the cathode of the second diode is connected with the grid of the half-bridge IGBT under the tested road of the vehicle-scale semiconductor power module through a second resistor; the third test power supply is connected with a collector of a half-bridge IGBT on a tested road of the vehicle-scale semiconductor power module; when the test is executed, the emitter of the half-bridge IGBT under the test path of the vehicle-gauge semiconductor power module is connected with the ground.
Description
Technical Field
The utility model relates to a new energy automobile field especially relates to a car rule semiconductor power module short circuit test structure.
Background
Under the great trend of energy conservation and environmental protection, along with the growth of the photovoltaic and electric automobile industries, the power of semiconductor products is larger, and the volume is larger. And the industry requires short circuit capability under extreme conditions for the product. However, the size of the product is increased, the stray inductance is also increased, and the short circuit test experiment detection is challenged, so that a scheme for conveniently, conveniently and accurately carrying out short circuit test on a large-size semiconductor power module is developed, and the development progress of a production party and the product type selection screening of a user are very important.
In the short circuit test of the upper bridge and the lower bridge of the semiconductor power module with the larger structure, the bus voltage is only slightly reduced when a product is short circuited. However, the two types of short circuits are most frequently encountered and least desirable in practical tests, and the reason for the two types of short circuits is caused by overlarge stray inductance in a loop after the packaging volume of a product is increased, at the moment, the bus voltage can be reduced to the conduction voltage drop of the product, the duration is long, and tube explosion is easy to occur at the moment.
The current common solution is to use a copper busbar or a thick wire to short-circuit an upper bridge, and the current flows down the lower bridge through the copper busbar and then the lower bridge is measured; or shorting the lower bridge in this manner to measure the upper bridge. However, this solution does not work well for larger modules (such as HPD modules from english-flying, and SSDC modules from ann) or is prone to short-circuiting of two types. And the adoption of the copper busbar or the thick wire not only introduces stray inductance, but also brings inconvenience to the operation.
SUMMERY OF THE UTILITY MODEL
In the summary section, a series of simplified form concepts are introduced, which are simplifications of the prior art in this field, and which will be further detailed in the detailed description section. The inventive content does not imply any attempt to define the essential features and essential features of the claimed solution, nor is it implied to be intended to define the scope of the claimed solution.
The to-be-solved technical problem of the utility model is to provide a can avoid appearing two types of short circuits to avoid introducing stray inductance's car rule semiconductor power module short circuit test structure.
In order to solve the technical problem, the utility model provides a car rule semiconductor power module short circuit test structure, include:
the anode of the first test power supply is connected to the grid of the half-bridge IGBT on the tested road of the vehicle-scale semiconductor power module and provides a first voltage;
an emitter of the half-bridge IGBT on a tested road of the vehicle-scale semiconductor power module is connected with GND;
the second test power supply is connected with the cathode of the first diode and the anode of the second diode;
a first diode with its anode connected with the gate of the half-bridge IGBT under the tested circuit of the vehicle-scale semiconductor power module via a first resistor
The cathode of the second diode is connected with the grid of the half-bridge IGBT under the tested road of the vehicle-scale semiconductor power module through a second resistor;
the positive electrode of the third test power supply is connected with the collector electrode of the half-bridge IGBT on the tested road of the vehicle-scale semiconductor power module;
when the test is executed, the emitting electrodes of the half-bridge IGBT under the tested circuit of the vehicle-scale semiconductor power module are connected with the ground.
Optionally, in the short circuit testing structure for the vehicle-mounted semiconductor power module, the first testing power supply, the second testing power supply and the third testing power supply are all isolated direct current power supplies.
Optionally, in the short circuit test structure for the vehicle-standard semiconductor power module, the output voltage of the first test power supply is greater than or equal to the turn-on voltage of the tested IGBT of the semiconductor power module.
Optionally, in the short circuit test structure for the vehicle-mounted semiconductor power module, the output voltage range of the first test power supply is + 15V- +20V.
Optionally, the second testing power source is a pulse power source.
Optionally, the second testing power supply outputs a pulse voltage square wave from-8V to + 15V.
Optionally, in the short circuit test structure for the vehicle-scale semiconductor power module, the resistance values of the first resistor and the second resistor range from 1 ohm to 85 ohm.
Optionally, the vehicle-type semiconductor power module is a vehicle-type IGBT full-bridge driving module or a SiC module.
The utility model discloses a use and principle as follows:
the positive electrode of a first test power supply is connected to the grid electrode of a half-bridge IGBT on a tested road of the vehicle-scale semiconductor power module, the emitting electrode of the half-bridge IGBT on the tested road of the vehicle-scale semiconductor power module is connected with GND, so that the first test power supply outputs a first voltage, the first voltage is determined by the IGBT conducting voltage of the tested road of the tested vehicle-scale semiconductor power module, a +15V starting voltage is used for the IGBT full-bridge driving module, and a +18V starting voltage is used for the SiC module;
connecting a second test power supply to the cathode of the first diode and the anode of the second diode; the anode of the first diode is connected with the grid of the half-bridge IGBT under the tested road of the vehicle-scale semiconductor power module through a first resistor, and the cathode of the second diode is connected with the grid of the half-bridge IGBT under the tested road of the vehicle-scale semiconductor power module through a second resistor; enabling the second test power supply to output pulse voltage square waves from-8V to + 15V;
the anode of the third test power supply is connected with the collector of the half-bridge IGBT on the tested road of the vehicle-scale semiconductor power module; the emitter of the half-bridge IGBT under the test path of the vehicle-gauge semiconductor power module is connected with the ground, and whether short circuit occurs at present is tested;
and repeating the steps to complete the short circuit test of each test circuit.
In the short circuit test of the large-size vehicle-scale semiconductor power module, due to the size of a device, an external copper busbar or a thick wire can generate large stray inductance and easily cause second-class short circuit. The invention uses one path of isolation direct current power supply, the power supply voltage is set as the positive voltage of the grid electrode in the corresponding product specification switch measurement to open the upper bridge, the current directly flows to the lower bridge through the upper bridge, the current path is shortened, and the external copper bus bar or the thick lead is removed, so that larger stray inductance can not be generated, the short circuit capability of the lower bridge can be conveniently and effectively tested, the two types of short circuits can not be ensured, and the reverse operation is performed when the short circuit capability of the upper bridge is tested.
Drawings
The drawings of the present application are intended to illustrate the general nature of methods, structures and/or materials used in accordance with certain exemplary embodiments of the present application, and to supplement the description presented in the specification. The drawings of the present invention, however, are not to scale and may not accurately reflect the precise structural or performance characteristics of any given embodiment, and should not be construed as limiting or restricting the scope of numerical values or attributes encompassed by exemplary embodiments in accordance with the present invention. The present invention will be described in further detail with reference to the following detailed description and accompanying drawings:
fig. 1 is a schematic structural diagram of a first embodiment of the present invention.
Description of the reference numerals
First test power supply 1
Second test power supply 2
A first diode 3
Second diode
A first resistor 5
A vehicle-mounted semiconductor power module 7.
Detailed Description
The following description of the embodiments of the present invention is provided by way of specific examples, and other advantages and technical effects of the present invention will be fully apparent to those skilled in the art from the disclosure of the present invention. The utility model discloses can also implement or use through different embodiment, each item detail in this specification can also be used based on different viewpoints, carries out various decorations or changes under the general design thought that does not deviate from the utility model. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict. The following exemplary embodiments of the present invention may be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. It is understood that these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of these exemplary embodiments to those skilled in the art. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements present. Like reference numerals refer to like elements throughout the drawings.
A first embodiment;
referring to fig. 1, the present invention provides a short circuit testing structure for a vehicle-type semiconductor power module, including:
the first test power supply 1 is an isolated direct current power supply +15V, the anode of the first test power supply is connected with the grid electrode of the half-bridge IGBT on the tested road of the vehicle-scale semiconductor power module 7, and the first test power supply provides a first voltage;
an emitter of the half-bridge IGBT on a tested road of the vehicle-scale semiconductor power module 7 is connected with GND;
a second test power supply 2 connected to the cathode of the first diode 3 and the anode of the second diode 4;
a first diode 3, the anode of which is connected with the grid of the half-bridge IGBT under the tested circuit of the vehicle-scale semiconductor power module 7 through a first resistor 5
The cathode of the second diode 4 is connected with the grid of the half-bridge IGBT under the tested circuit of the vehicle-scale semiconductor power module 7 through a second resistor 6;
a third test power supply 8, the anode of which is connected with the collector of the half-bridge IGBT on the tested road of the vehicle-scale semiconductor power module 7;
when the test is executed, the emitting electrodes of the half-bridge IGBT under the test path of the vehicle-scale semiconductor power module 7 are connected with the ground.
Further, it will be understood that, although the terms first, second, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of exemplary embodiments according to the present invention.
A second embodiment;
with continued reference to fig. 1, the present invention provides a short circuit testing structure for a vehicle-type semiconductor power module, comprising:
the first test power supply 1 is an isolated direct current power supply +15V, the anode of the first test power supply is connected with the grid electrode of the half-bridge IGBT on the tested road of the vehicle-scale semiconductor power module 7, and the first test power supply provides a first voltage;
an emitter of the half-bridge IGBT on a tested road of the vehicle-scale semiconductor power module 7 is connected with GND;
the second test power supply 2 is a pulse power supply and outputs pulse voltage square waves from-8V to +15V, and the second test power supply is connected with the cathode of the first diode 3 and the anode of the second diode 4;
a first diode 3, the anode of which is connected with the grid of the half-bridge IGBT under the tested circuit of the vehicle-scale semiconductor power module 7 through a first resistor 5
The cathode of the second diode 4 is connected with the grid of the half-bridge IGBT under the tested circuit of the vehicle-scale semiconductor power module 7 through a second resistor 6;
a third test power supply 8, the anode of which is connected with the collector of the half-bridge IGBT on the tested road of the vehicle-scale semiconductor power module 7;
when the test is executed, the vehicle-gauge semiconductor power module 7 is connected with the emitter of the half-bridge IGBT under the test path.
A third embodiment;
with continued reference to fig. 1, the present invention provides a short circuit testing structure for a vehicle-type semiconductor power module, comprising:
the first test power supply 1 is an isolated direct current power supply +15V, the anode of the first test power supply is connected with the grid electrode of the half-bridge IGBT on the tested road of the vehicle-scale semiconductor power module 7, and the first test power supply provides a first voltage;
an emitter of the half-bridge IGBT on a tested road of the vehicle-scale semiconductor power module 7 is connected with GND;
the second test power supply 2 is a pulse power supply and outputs pulse voltage square waves from-8V to +15V, and the second test power supply is connected with the cathode of the first diode 3 and the anode of the second diode 4;
a first diode 3, the anode of which is connected with the grid of the half-bridge IGBT under the tested circuit of the vehicle-scale semiconductor power module 7 through a first resistor 5
The cathode of the second diode 4 is connected with the grid of the half-bridge IGBT under the tested circuit of the vehicle-scale semiconductor power module 7 through a second resistor 6;
a third test power supply 8, the anode of which is connected with the collector of the half-bridge IGBT on the tested road of the vehicle-scale semiconductor power module 7;
when the test is executed, the emitter of the half-bridge IGBT under the test path of the vehicle-scale semiconductor power module 7 is connected with the ground, the resistance values of the first resistor and the second resistor are the same, and the resistance values of the first resistor and the second resistor range from 1 ohm to 85 ohm.
Optionally, the first test power supply outputs +18V when the truck-scale semiconductor power module is a SiC module.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The present invention has been described in detail with reference to the specific embodiments and examples, but these should not be construed as limitations of the present invention. Numerous variations and modifications can be made by those skilled in the art without departing from the principles of the invention, which should also be considered as within the scope of the invention.
Claims (8)
1. A vehicle-type semiconductor power module short circuit test structure is characterized by comprising:
the anode of the first test power supply is connected to the grid of the half-bridge IGBT on the tested road of the vehicle-scale semiconductor power module and provides a first voltage;
an emitter of the half-bridge IGBT on a tested road of the vehicle-scale semiconductor power module is connected with GND;
the second test power supply is connected with the cathode of the first diode and the anode of the second diode;
a first diode with its anode connected with the gate of the half-bridge IGBT under the tested circuit of the vehicle-scale semiconductor power module via a first resistor
The cathode of the second diode is connected with the grid of the half-bridge IGBT under the tested road of the vehicle-scale semiconductor power module through a second resistor;
the positive electrode of the third test power supply is connected with the collector electrode of the half-bridge IGBT on the tested road of the vehicle-scale semiconductor power module;
when the test is executed, the emitter of the half-bridge IGBT under the test path of the vehicle-scale semiconductor power module is connected with the ground.
2. The vehicle-scale semiconductor power module short circuit test structure of claim 1, wherein: the first, second and third testing power supplies are all isolated DC power supplies.
3. The vehicle-scale semiconductor power module short circuit test structure of claim 1, wherein: the output voltage of the first test power supply is greater than or equal to the IGBT conducting voltage of the tested circuit of the semiconductor power module.
4. The vehicle-scale semiconductor power module short circuit test structure of claim 1, wherein: the output voltage range of the first test power supply is + 15V- +20V.
5. The vehicle-scale semiconductor power module short circuit test structure of claim 1, wherein: the second test power supply is a pulsed power supply.
6. The vehicle-scale semiconductor power module short circuit test structure of claim 4, wherein: the second test power supply outputs a pulse voltage square wave of-8V to + 15V.
7. The vehicle-scale semiconductor power module short circuit test structure of claim 1, wherein: the first resistor and the second resistor have resistance values ranging from 1 ohm to 85 ohm.
8. The vehicle-scale semiconductor power module short circuit test structure of any one of claims 1 to 7, wherein: the vehicle gauge semiconductor power module is a vehicle gauge IGBT full-bridge driving module or a SiC module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222282663.XU CN218331699U (en) | 2022-08-30 | 2022-08-30 | Car rule semiconductor power module short circuit test structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222282663.XU CN218331699U (en) | 2022-08-30 | 2022-08-30 | Car rule semiconductor power module short circuit test structure |
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| Publication Number | Publication Date |
|---|---|
| CN218331699U true CN218331699U (en) | 2023-01-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202222282663.XU Active CN218331699U (en) | 2022-08-30 | 2022-08-30 | Car rule semiconductor power module short circuit test structure |
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| Country | Link |
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| CN (1) | CN218331699U (en) |
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2022
- 2022-08-30 CN CN202222282663.XU patent/CN218331699U/en active Active
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