CN218287030U - Dielectric composite film - Google Patents
Dielectric composite film Download PDFInfo
- Publication number
- CN218287030U CN218287030U CN202220976373.2U CN202220976373U CN218287030U CN 218287030 U CN218287030 U CN 218287030U CN 202220976373 U CN202220976373 U CN 202220976373U CN 218287030 U CN218287030 U CN 218287030U
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- Prior art keywords
- layer
- composite material
- barium titanate
- dielectric
- material layer
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- 239000002131 composite material Substances 0.000 title claims abstract description 53
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract description 26
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims abstract description 26
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 18
- 239000000843 powder Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims description 6
- 238000007731 hot pressing Methods 0.000 abstract description 4
- 238000005265 energy consumption Methods 0.000 abstract description 3
- 238000002360 preparation method Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 3
- 238000004146 energy storage Methods 0.000 description 3
- 239000002033 PVDF binder Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Abstract
The present application provides a dielectric composite film comprising: a composite material layer, a barium titanate powder layer; the composite material layer is an ABS/multi-layer graphene composite material layer; the composite material layer and the barium titanate powder layer are alternately paved, and the paving direction of the composite material layer and the barium titanate powder layer is vertical to the film paving direction. The dielectric composite film has the performance of high dielectric constant and low dielectric loss, can also be curled and compounded in a hot pressing manner, and is pollution-free, low in energy consumption, low in cost, simple in preparation process and high in safety coefficient.
Description
Technical Field
The application belongs to a dielectric composite material, and particularly relates to a dielectric composite film.
Background
The high-performance dielectric material has excellent functions of average electric field and electric energy storage, and has very wide application prospect in novel energy storage devices and high-power energy storage systems.
The high dielectric film material mainly comprises inorganic ceramic material and high dielectric polymer material. However, the existing inorganic ceramic material has the problems of poor mechanical properties, difficulty in large-area film formation and difficult curling, and the existing polymer dielectric material is polyvinylidene fluoride (PVDF) and grafted products thereof, which are difficult to meet the requirements of small volume and large capacity of the capacitor.
In the prior art, a method for improving the dielectric constant of the dielectric film is to add a conductive material into a polymer material, but the leakage current generated by the conductive material causes a large dielectric loss. In the prior art, the multilayer dielectric composite material adopted to solve the problems is high in cost and complex in process.
SUMMERY OF THE UTILITY MODEL
Based on the above problems, the present application provides a dielectric composite film, which can overcome the problems of poor mechanical properties, poor dielectric properties and large loss of the existing dielectric film material, so that the dielectric film material has the effects of high dielectric constant and low loss.
In order to achieve the purpose, the invention adopts the following technical scheme:
a dielectric composite film, comprising: at least two composite material layers, at least one barium titanate layer;
the composite material layer is an ABS/multi-layer graphene composite material layer with the graphene mass fraction of 7-8%;
the composite material layer and the barium titanate powder layer are alternately laid, and the laying direction of the composite material layer and the barium titanate layer is perpendicular to the film laying direction.
In one possible implementation, the film laying direction is a substrate extending direction.
In one possible implementation, the thickness of the composite layer is 0.2mm to 0.22mm.
In one possible implementation, the thickness of the barium titanate layer is 0.006mm-0.009mm.
In one possible implementation manner, the mass fraction of the graphene in the composite material layer is 7-8%.
In one possible implementation, the barium titanate layer is a barium titanate powder layer.
Compared with the prior art, the method has the following beneficial effects:
(1) The composite material layer contains multilayer graphene, so that the dielectric constant of the polymer layer material can be improved; can make the polymer have better processing performance and flexibility.
(2) The composite material layer and the barium titanate powder layer are arranged at intervals, so that the electricity storage capacity of the capacitor and the storage function of the semiconductor storage device can be effectively improved, and lower dielectric loss can be kept.
(3) The dielectric composite film has high dielectric constant and low dielectric loss, can be curled and compounded in a hot pressing mode, and is free of pollution, low in energy consumption, low in cost, simple in preparation process and high in safety coefficient.
(4) Because the multilayer graphene is relatively easy to disperse, the ABS/multilayer graphene composite material can be prepared by melt blending of ABS and multilayer graphene, and has low cost and simple process.
Drawings
FIG. 1 is a schematic structural diagram provided in an embodiment of the present application.
In the figure: 1 is a composite material layer; and 2 is a barium titanate powder layer.
Detailed Description
In order to make the technical solutions in the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by a person skilled in the art without creative efforts shall fall within the protection scope of the present invention.
As shown in fig. 1, a dielectric composite film includes: a composite material layer, a barium titanate powder layer;
the composite material layer and the barium titanate powder layer are alternately paved, and the paving direction of the composite material layer and the barium titanate powder layer is perpendicular to the film paving direction.
In the embodiment of the application, the total number of layers of the composite material layer and the barium titanate powder layer which are alternately paved is an odd number, and the ABS/multi-layer graphene composite material layer with the graphene mass fraction of 7-8% is paved on the outermost layer.
In the embodiment of the present application, the composite material layer and the barium titanate powder layer are composited by hot pressing.
In one example, the filming direction is a substrate extending direction.
In an embodiment of the present application, the composite material layer and the barium titanate powder layer are stacked on the substrate.
In the embodiment of the present application, the extending direction of the substrate is a plane or a curved surface where the substrate is located.
In one example, the composite layer has a thickness of 0.2mm to 0.22mm.
In the examples of the present application, the thickness of the composite material layer was 0.15mm.
In one example, the thickness of the barium titanate powder layer is 0.006mm-0.009mm.
In the embodiment of the present application, the thickness of the barium titanate powder layer is 0.006mm.
In one example, the mass fraction of the graphene in the composite material layer is 7-8%.
In the embodiment of the present application, the mass fraction of the graphene in the composite material layer is 7.5%.
Compared with the prior art, the embodiment of the application has the following beneficial effects:
(1) The composite material layer contains multilayer graphene, so that the dielectric constant of the polymer layer material can be improved; can make the polymer have better processing performance and flexibility.
(2) The composite material layer and the barium titanate layer are arranged at intervals, so that the electricity storage capacity of the capacitor and the storage function of the semiconductor memory device can be effectively improved, and lower dielectric loss can be kept.
(3) The dielectric composite film has high dielectric constant and low dielectric loss, can be curled and compounded in a hot pressing mode, and is free of pollution, low in energy consumption, low in cost, simple in preparation process and high in safety coefficient.
(4) Because the multilayer graphene is easy to disperse compared with graphene, the ABS/multilayer graphene composite material can be prepared by melt blending of ABS and multilayer graphene, and has low cost and simple process.
Finally, it should be noted that: the above embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present application.
Claims (5)
1. A dielectric composite film, comprising: at least two composite material layers, at least one barium titanate layer;
the composite material layer is made of an ABS/multilayer graphene composite material;
the composite material layer and the barium titanate layer are alternately paved, and the paving direction of the composite material layer and the barium titanate layer is perpendicular to the film paving direction.
2. The dielectric composite film of claim 1, wherein the film-laying direction is a substrate extending direction.
3. The dielectric composite film of claim 1, wherein the composite layer has a thickness of 0.2mm to 0.22mm.
4. The dielectric composite film of claim 1, wherein the barium titanate layer has a thickness of 0.006mm to 0.009mm.
5. The dielectric composite film of claim 1, wherein the barium titanate layer is a barium titanate powder layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220976373.2U CN218287030U (en) | 2022-04-26 | 2022-04-26 | Dielectric composite film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220976373.2U CN218287030U (en) | 2022-04-26 | 2022-04-26 | Dielectric composite film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218287030U true CN218287030U (en) | 2023-01-13 |
Family
ID=84802779
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202220976373.2U Active CN218287030U (en) | 2022-04-26 | 2022-04-26 | Dielectric composite film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN218287030U (en) |
-
2022
- 2022-04-26 CN CN202220976373.2U patent/CN218287030U/en active Active
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|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20240311 Address after: No. 2 Yuminzhihe East Road, Xiaolan Town, Zhongshan City, Guangdong Province, 528415 Patentee after: Guangdong shunshi Material Technology Co.,Ltd. Country or region after: China Address before: 6 No. 529090 Guangdong city of Jiangmen province Chao Lian Road Patentee before: JIANGMEN POLYTECHNIC Country or region before: China |