CN218194512U

CN218194512U - Semiconductor substrate grinding copper disc

Info

Publication number: CN218194512U
Application number: CN202222315140.0U
Authority: CN
Inventors: 朱宁
Original assignee: Yuanshan New Material Technology Co ltd
Current assignee: Yuanshan New Material Technology Co ltd
Priority date: 2022-09-01
Filing date: 2022-09-01
Publication date: 2023-01-03
Anticipated expiration: 2032-09-01

Abstract

The application discloses semiconductor substrate grinds copper disc belongs to semiconductor substrate processing technology field, including base and grinding copper disc, wherein grind the copper disc and be located the top of base, a plurality of first grinding grooves and a plurality of second grinding groove have evenly been laid to the top surface of grinding the copper disc, wherein first grinding groove with the notch diameter in second grinding groove is inequality, just first grinding groove with the second grinding groove is followed the center of grinding the copper disc is circular interval diffusion distribution. The application provides a semiconductor substrate grinds copper disc can improve the structural strength who grinds copper disc through the grinding groove of less fluting angle, and then improves the life who grinds copper disc, and simultaneously, the grinding groove through great fluting angle can improve the chip removal efficiency of grinding in-process, has also reduced the risk on grinding in-process fish tail wafer surface.

Description

Semiconductor substrate grinding copper disc

Technical Field

The utility model relates to a semiconductor substrate processing technology field especially relates to semiconductor substrate grinds copper disc.

Background

A copper disk for thinning a semiconductor substrate, such as a sapphire substrate, is generally provided with a grinding groove on a disk surface, and a workpiece is ground and polished by the grinding groove.

The grooving angle of the grinding groove formed on the grinding copper disc of the semiconductor substrate is mostly single angle. However, if the groove opening angle of the grinding groove is small, the groove is not beneficial to rapid chip removal in the grinding process, and the surface of the wafer is easy to scratch; if the slotting angle is large, the service life of the surface of the grinding copper disc can be shortened, and the production cost is increased.

SUMMERY OF THE UTILITY MODEL

An advantage of the utility model is that a semiconductor substrate grinds copper disc is provided, wherein evenly lay a plurality of first grinding groove and the second grinding groove that become circular interval diffusion and distribute at the top surface that grinds copper disc, and the notch diameter in first grinding groove and second grinding groove is inequality to both solved the angle undersize and influenced the problem of chip removal with the grooved mode of dual angle, improved the life who grinds copper disc again.

An advantage of the utility model is that a semiconductor substrate grinds copper dish is provided, wherein first grinding groove and second grind the groove depth in groove the same, and its cross-section all becomes trapezoidal, both conveniently grinds the quick machine-shaping of copper dish, can ensure again to grind the holistic structural strength of copper dish, and then ensures to grind the life of copper dish.

In order to achieve the utility model discloses above at least one advantage, the utility model provides a semiconductor substrate grinds copper plate, including base and grinding copper plate, wherein grind the copper plate and be located the top of base, a plurality of first grinding groove and a plurality of second grinding groove have evenly been laid to the top surface of grinding copper plate, wherein first grinding groove with the notch diameter in second grinding groove is inequality, just first grinding groove with the second grinding groove is followed the center of grinding copper plate is circular interval diffusion distribution.

According to the utility model discloses an embodiment, the first fluting angle of grinding the groove is 30, the fluting angle that the groove was ground to the second is 45.

According to the utility model discloses an embodiment, the fluting angle of first grinding groove is 30, the fluting angle of second grinding groove is 60.

According to the utility model discloses an embodiment, the first fluting angle of grinding the groove is 45, the fluting angle that the groove was ground to the second is 60.

According to the utility model discloses an embodiment, first grinding groove with the groove depth in second grinding groove is the same, just first grinding groove with the cross-section in second grinding groove all becomes trapezoidal.

According to the utility model discloses an embodiment, first grind the groove with the groove depth that the groove was ground to the second is 0.35mm ~ 0.65mm.

These and other objects, features and advantages of the present invention will become more fully apparent from the following detailed description.

Drawings

Fig. 1 shows a schematic front view of a semiconductor substrate polishing copper disc according to the present invention.

Fig. 2 shows a schematic top view of the semiconductor substrate polishing copper disc of the present application.

Reference numerals are as follows: 10-base, 20-grinding copper disc, 201-first grinding groove, 202-second grinding groove.

Detailed Description

The following description is presented to disclose the invention so as to enable any person skilled in the art to practice the invention. The preferred embodiments in the following description are given by way of example only, and other obvious variations will occur to those skilled in the art. The basic principles of the invention, as defined in the following description, may be applied to other embodiments, variations, modifications, equivalents and other technical solutions without departing from the spirit and scope of the invention.

It will be understood by those skilled in the art that in the disclosure of the specification, the terms "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate orientations or positional relationships that are based on those shown in the drawings, which are merely for convenience in describing the invention and to simplify the description, and do not indicate or imply that the device or element so referred to must have a particular orientation, be constructed and operated in a particular orientation, and, therefore, the above-described terms should not be construed as limiting the invention.

It is understood that the terms "a" and "an" should be interpreted as meaning that a number of one element or element is one in one embodiment, while a number of other elements is one in another embodiment, and the terms "a" and "an" should not be interpreted as limiting the number.

Referring to fig. 1 and 2, a semiconductor substrate polishing copper disc according to a preferred embodiment of the present invention will be described in detail below, wherein the semiconductor substrate polishing copper disc mainly comprises a base 10 and a polishing copper disc 20, wherein the polishing copper disc 20 is located on the top of the base 10, and a plurality of first polishing grooves 201 and a plurality of second polishing grooves 202 are uniformly distributed on the top surface of the polishing copper disc 20, wherein the diameters of the notches of the first polishing grooves 201 and the second polishing grooves 202 are different, and the first polishing grooves 201 and the second polishing grooves 202 are in circular interval diffusion distribution along the center of the polishing copper disc 20. Therefore, for the semiconductor substrate grinding copper disc of traditional single fluting angle, the grooved grinding copper disc 20 of two angles of the pioneering of this application can enough solve traditional semiconductor substrate grinding copper disc because of fluting angle undersize influence chip removal efficiency to the problem on easy fish tail wafer surface, can solve traditional semiconductor substrate grinding copper disc again because of the too big problem that reduces grinding copper disc 20 life of fluting angle.

Take the example that the grooving angle of the first grinding groove 201 is smaller than the grooving angle of the second grinding groove 202. First grinding groove 201 with second grinding groove 202 is followed when grinding copper disc 20's center becomes circular interval diffusion distribution, less fluting angle first grinding groove 201 can improve grind copper disc 20's structural strength, and then improves grind copper disc 20's life, and great fluting angle second grinding groove 202 can improve the chip removal efficiency of grinding in-process, has also reduced the risk on fish tail wafer surface among the grinding process.

In general, if the grooving angle of the conventional grinding copper disc is 30 °, the grooving angle of the first grinding groove 201 of the grinding copper disc 20 provided by the present application is 30 °, and the grooving angle of the second grinding groove 202 is 45 ° or 60 °. That is, the grooving angle of the first grinding groove 201 is smaller than or equal to the conventional grooving angle, and the grooving angle of the second grinding groove 202 is larger than the conventional grooving angle. For example, other conventional slotting angles can be adaptively expanded.

In a preferred embodiment, the grooving angle of the first grinding groove 201 is 30 °, and the grooving angle of the second grinding groove 202 is 45 °.

In another preferred embodiment, the grooving angle of the first grinding groove 201 is 30 °, and the grooving angle of the second grinding groove 202 is 60 °.

As a third preferred embodiment, the grooving angle of the first grinding groove 201 is 45 °, and the grooving angle of the second grinding groove 202 is 60 °.

Further preferably, the groove depths of the first grinding groove 201 and the second grinding groove 202 are the same, so that the grinding copper disc 20 can be manufactured and molded quickly, the structural strength of the whole semiconductor substrate grinding copper disc can be ensured, the service life of the grinding copper disc 20 can be further ensured, and the processing cost can be reduced. In addition, first grind groove 201 with the cross-section of second grinding groove 202 all becomes trapezoidal, not only convenient processing, can also ensure to grind structural strength and the structural stability of groove itself, long service life, the chip removal of also being convenient for.

It is further preferred that the groove depth of the first grinding groove 201 and the second grinding groove 202 is 0.35mm to 0.65mm, such as 0.4mm, 0.5mm or 0.6mm.

In processing the first grinding groove 201 and the second grinding groove 202, grooves are typically formed by using diamond knives with corresponding angles. For example, a 30 ° diamond knife, a 45 ° diamond knife, or a 60 ° diamond knife is used.

It should be noted that the terms "first" and "second" in the present invention are used for descriptive purposes only, do not indicate any order, and are not to be construed as indicating or implying any relative importance, and these terms are to be interpreted as names.

It will be understood by those skilled in the art that the embodiments of the present invention described above and shown in the drawings are given by way of example only and are not limiting of the present invention. The advantages of the present invention are complete and effective. The functional and structural principles of the present invention have been shown and described in the embodiments without departing from the principles, embodiments of the present invention may have any deformation or modification.

Claims

1. Semiconductor substrate grinds copper disc, including base and grinding copper disc, wherein grind the copper disc and be located the top of base, its characterized in that, the top surface of grinding copper disc has evenly laid a plurality of first grinding grooves and a plurality of second grinding groove, wherein first grinding groove with the notch diameter in second grinding groove is inequality, just first grinding groove with the second grinding groove is followed the center of grinding copper disc is circular interval diffusion distribution.

2. The semiconductor substrate grinding copper disk according to claim 1, wherein the first grinding grooves have a grooving angle of 30 ° and the second grinding grooves have a grooving angle of 45 °.

3. The semiconductor substrate grinding copper disc as claimed in claim 1, wherein the grooving angle of the first grinding groove is 30 ° and the grooving angle of the second grinding groove is 60 °.

4. The semiconductor substrate grinding copper disc as claimed in claim 1, wherein the grooving angle of the first grinding groove is 45 ° and the grooving angle of the second grinding groove is 60 °.

5. The semiconductor substrate polishing copper disk according to any one of claims 2 to 4, wherein the first polishing grooves and the second polishing grooves have the same groove depth, and the cross sections of the first polishing grooves and the second polishing grooves are each trapezoidal.

6. The semiconductor substrate polishing copper disk according to claim 5, wherein the groove depth of said first polishing groove and said second polishing groove is 0.35mm to 0.65mm.