CN218160443U - OLED device with high reliability and high aperture opening ratio - Google Patents
OLED device with high reliability and high aperture opening ratio Download PDFInfo
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- CN218160443U CN218160443U CN202221981177.0U CN202221981177U CN218160443U CN 218160443 U CN218160443 U CN 218160443U CN 202221981177 U CN202221981177 U CN 202221981177U CN 218160443 U CN218160443 U CN 218160443U
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Abstract
The utility model provides an OLED device with high reliability and high aperture ratio, which comprises a substrate, a first electrode layer, a short-circuit prevention layer, an organic luminescent layer, a second electrode layer and an encapsulation layer which are sequentially stacked; the thickness n of the short circuit prevention layer, the thickness m of the organic light emitting layer and the thickness k of the second electrode layer simultaneously satisfy the following relations: n is more than or equal to 4 x k; n is more than or equal to 2 x m and more than or equal to m; m + k is more than or equal to n. The utility model discloses a OLED device of high reliability high aperture ratio has following beneficial effect: 1) When a short-circuit point appears in the OLED device, the performance of the light-emitting unit can only be influenced due to the effect of the short-circuit prevention layer supporting column, and the use of the whole device can not be influenced; 2) The utility model discloses a OLED device, first electrode layer all adopt whole face coating by vaporization technique with the second electrode layer, only need add the one deck and prevent the short circuit layer to need insulating layer technology and sculpture technology, very big optimization the production procedure and the technology degree of difficulty.
Description
Technical Field
The utility model relates to a OLED device of high reliability high aperture ratio belongs to electroluminescent technical field, particularly, belongs to organic electroluminescent technical field.
Background
The electroluminescent device has the advantages of energy conservation, health, lightness, thinness, environmental protection, self-luminescence, short response time, simple structure, realization of flexibility and the like, is concerned by more and more students and enterprises in the fields of illumination and display, and has wide development prospect.
The electroluminescent device is generally constructed by fabricating two thin film electrodes on a substrate, fabricating a multi-layer organic layer between the two electrodes, and then energizing the two electrodes to cause the device to emit light.
In the prior art, there are 2 methods in the industry for improving the reliability of devices:
chinese patent CN201810873198 discloses a high-stability OLED lighting screen, in which each light-emitting unit in the electroluminescent device is disconnected with each other, and the light-emitting units are connected in series with a resistance protection device; when a short circuit occurs, the resistance protection device is fused, the pixel point fails, the luminous effect of the device is not affected, and the reliability of the device is improved. The invention needs to manufacture the resistor protection layer again, and has very complex process and low practicability.
Chinese patent CN201611104816 discloses an organic electroluminescent device and a method for fabricating the same, wherein a conducting bar and a current-carrying bar are disposed on a first electrode layer, a light-emitting unit is connected to the current-carrying bar through the conducting bar, and when a short circuit occurs, the conducting bar can effectively prevent a large current from passing through the short-circuit unit, thereby improving the reliability of the device. The invention has higher practicability, but the effective area of the device can be occupied because the current carrying strips and the flow guide strips are arranged in the first electrode layer, and the aperture opening ratio is lower.
In general, electroluminescent devices have the following technical problems: high reliability and high aperture ratio cannot be simultaneously considered.
Disclosure of Invention
The utility model aims at overcoming prior art not enough, providing a OLED device of high reliability high aperture ratio, can solve the poor and low problem of aperture ratio of reliability.
A first object of the present invention is to provide an OLED device with high reliability and high aperture ratio.
The second purpose of the utility model is to provide a preparation method of the electroluminescent device.
The technical scheme of the utility model as follows:
in a first aspect of the present invention, an OLED device with high reliability and high aperture ratio is provided.
The OLED device with high reliability and high aperture ratio comprises a substrate, a first electrode layer, a short-circuit prevention layer, an organic light emitting layer, a second electrode layer and an encapsulation layer which are sequentially stacked; the short circuit prevention layer is a closed structure with a hollow inner part, and a plurality of independent short circuit prevention units are formed in the device; the short-circuit prevention layer is a high-temperature-resistant short-circuit prevention layer; the short-circuit prevention layer is made of a high-temperature resistant material; the short-circuit prevention layer divides the organic light emitting layer into a plurality of independent organic light emitting layer units; each organic light emitting layer unit corresponds to each short circuit prevention unit;
the first electrode layer and the second electrode layer respectively correspond to an anode and a cathode of the device. When the device is an inverted device, the first electrode layer is a cathode and the second electrode layer is an anode; when the device is a positive device, the first electrode layer is an anode and the second electrode layer is a cathode;
wherein: the thickness n of the short-circuit prevention layer, the thickness m of the organic light-emitting layer and the thickness k of the second electrode layer simultaneously satisfy the following relations: n is more than or equal to 4 x k; n is more than or equal to 2 x m and more than or equal to m; m + k is more than or equal to n.
Preferably, the substrate may be made of rigid glass or flexible polymer film.
Preferably, the first electrode layer is an anode, and the material of the first electrode layer is a transparent thin film material, such as ITO, IZO, FTO, or the like.
Preferably, the short-circuit prevention layer is a closed pattern with a hollowed-out interior, and the shape is selected from rectangle, triangle, trapezoid, parallelogram, pentagon, circle, hexagon and the like, and is preferably rectangle or regular polygon.
Preferably, the short-circuit prevention layer is made of a high-temperature resistant material, and can be made of an organic material or an inorganic material; among them are organic materials such as: PI, PEEK, PSF, PAR, or the like; inorganic materials such as SiN or SiC, etc.
Preferably, the organic light-emitting layer comprises one or more organic functional layers, preferably in a number of 1 to 5.
Preferably, the organic functional layer includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer.
Preferably, the second electrode layer is a cathode, and the material of the second electrode layer is Ag, al, mg, or the like.
The utility model discloses in, the material of base plate, first electrode layer, short-circuit prevention layer, organic light emitting layer, second electrode layer and encapsulated layer all adopts current material.
In a second aspect of the present invention, there is provided a method for manufacturing an OLED device with high reliability and high aperture ratio, comprising the following steps:
s1, plating an ITO film on a glass substrate through a magnetron sputtering process, then obtaining a first electrode layer through an etching process, and obtaining a clean patterned ITO substrate through cleaning, drying and ultraviolet irradiation;
s2, forming a short-circuit prevention layer on the substrate through a coating process, and preparing a patterned short-circuit prevention layer through processes of exposure, development, stripping and the like;
s3, sequentially depositing organic functional layers including a light-emitting layer, an electron injection layer, an electron transport layer, a hole injection layer and a hole transport layer through an evaporation process, wherein each film layer is sequentially evaporated according to a specific structure;
s4, switching the evaporation mask plate, and continuing to evaporate the material of the second electrode layer;
and S5, packaging the evaporated device through processes of dispensing, pressing, UV curing and baking to prepare the sealed OLED device.
The utility model discloses a theory of operation as follows:
on one hand, when the device is normally used, short-circuit prevention layers are arranged on the periphery of the organic light emitting layer in the light emitting unit, the thickness of each short-circuit prevention layer is slightly larger than that of the organic light emitting layer (2 x m is larger than or equal to n and larger than or equal to m), and the thickness of the second electrode layer is larger than the difference value between the short-circuit prevention layer and the organic light emitting layer (m + k is larger than or equal to n), so that the second electrode layer can integrally cover the whole light emitting region in the actual manufacturing process, and the whole OLED device is a common cathode device.
On the other hand, when a certain light-emitting unit in the device is short-circuited, the temperature in the light-emitting unit is increased, the organic light-emitting layer in the area is melted, and the short-circuit prevention layer is made of a high-temperature-resistant material and cannot be melted, so that a closed short-circuit prevention area supporting column is formed; meanwhile, along with the melting of the organic light emitting layer, the height of the second electrode layer is reduced to be below 1/2 of the short-circuit prevention support column (n is more than or equal to 4 x k), the second electrode layer at the position can be integrally disconnected with the second electrode layer, other areas can be normally used, the use of the whole OLED device cannot be influenced, the short-circuit prevention effect is played, and the reliability of the device is improved.
The utility model discloses a OLED device of high reliability high aperture ratio has following beneficial effect:
1) When a short-circuit point appears in the OLED device, the performance of the light-emitting unit can be only influenced due to the effect of the short-circuit prevention layer supporting column, and the use of the whole device can not be influenced;
2) The OLED device of the utility model adopts the whole-surface evaporation technology for the first electrode layer and the second electrode layer, only one layer of short-circuit prevention layer is needed to be added, and the insulating layer process and the etching process are not needed, thereby greatly optimizing the production flow and the process difficulty;
3) The utility model discloses a OLED device, organic light emitting layer are by the short circuit layer of preventing of inside fretwork fall into a plurality of organic light emitting layer units, and the luminous area who occupies is less, and the aperture opening ratio can reach more than 95%, has improved the efficiency of device.
Drawings
For a better understanding of the features and technical content of the present invention, reference should be made to the following detailed description of the present invention along with the accompanying drawings, which are provided for purposes of reference and illustration only and are not intended to limit the present invention.
Fig. 1 is a schematic structural diagram of an OLED device in embodiment 1 of the present invention.
Fig. 2 is a schematic plane layout diagram of an OLED device in embodiment 1 of the present invention.
Fig. 3 is a schematic structural diagram of an OLED device in embodiment 2 of the present invention.
Wherein; 10 is a substrate, 20 is a first electrode layer, 30 is a short prevention layer, 40 is an organic light emitting layer, 50 is a second electrode layer, 60 is an encapsulation layer, 31 is a first short prevention unit, 32 is a second short prevention unit, 33 is a third short prevention unit, 41 is a first organic light emitting layer unit, 42 is a second organic light emitting layer unit, and 43 is a third organic light emitting layer unit.
Detailed Description
In order to deepen the understanding of the present invention, the present invention is further explained with reference to the drawings and the embodiments, which are only used to explain the present invention and are not limited to the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the combination or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. In addition, in the description process of the embodiment of the present invention, the positional relationships of the devices such as "up", "down", "front", "back", "left", "right" and the like in all the drawings all use fig. 1 as a standard.
As shown in fig. 1, the OLED device with high reliability and high aperture ratio of the present invention includes a substrate 10, a first electrode layer 20, a short-circuit prevention layer 30, an organic light emitting layer 40, a second electrode layer 50, and an encapsulation layer 60 stacked in sequence. The short circuit prevention layer is a closed structure with a hollow inner part, and a plurality of independent short circuit prevention units are formed in the device; the short circuit prevention layer is a high-temperature-resistant short circuit prevention layer; the short-circuit prevention layer divides the organic light emitting layer into a plurality of independent organic light emitting layer units;
wherein:
the thickness n of the short-circuit prevention layer 30, the thickness m of the organic light emitting layer 40 and the thickness k of the second electrode layer 50 satisfy the following relationship:
n≥4*k；2*m≥n≥m；m+ k≥n
the substrate 10 may be made of rigid glass or flexible polymer film.
The first electrode layer 20 and the second electrode layer 50 correspond to an anode and a cathode of the device, respectively. In an inverted device, the first electrode layer 20 is the cathode and the second electrode layer 50 is the anode; conversely, in a positive device, the first electrode layer 20 is an anode and the second electrode layer 50 is a cathode.
The first electrode layer 20 is made of a transparent film material such as ITO, IZO, FTO, etc., and the thickness is preferably 100-300nm, the film layer is prepared by a sputtering coating process, and the pattern is prepared by an etching process.
A patterned auxiliary electrode layer can be selectively arranged on the first electrode layer 20 according to requirements, materials of the auxiliary electrode layer can be selected from materials such as MAM, ag, al and the like, the thickness is preferably 100-500 nm, the film layer is prepared by a sputtering coating process, and the pattern is prepared by an etching process.
The organic light emitting layer 40 may be a stacked device, and includes one or more organic functional layers, preferably 1-5 organic functional layers. The organic functional layer comprises a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and an electron injection layer; the total thickness of the organic light-emitting layer 40 is 100nm-1000nm, and the organic light-emitting layer is prepared by an evaporation process.
The short-circuit prevention layer 30 is a closed pattern with hollow-out interior, and the shape of the pattern includes rectangle, triangle, trapezoid, parallelogram, pentagon, circle, hexagon and the like, preferably rectangle or regular polygon. The short-circuit prevention layer is made of high-temperature-resistant materials, and organic materials or inorganic materials can be selected; among them are organic materials such as: PI, PEEK, PSF, PAR, or the like; inorganic materials such as SiN or SiC. The thickness is 100nm-2000nm; prepared by coating, exposing and developing processes.
The second electrode layer 50 is made of Ag, mg, al and the like, has a thickness of 100-1000nm and is prepared by an evaporation process.
The packaging layer 60 can be packaged by a glass cover plate packaging mode of UV glue and a drying agent, or a film prepared by silicon nitride/silicon oxide; the packaged device has better water and oxygen resistance.
As shown in fig. 2, the internal hollow-out closed region of the short-circuit prevention layer 30 forms a plurality of independent short-circuit prevention units: including a first short-circuit prevention unit 31, a second short-circuit prevention unit 32, a third short-circuit prevention unit 33, etc. In fig. 1, the organic light emitting layer 40 is divided into a plurality of organic light emitting layer units by the short-circuit prevention layer 30, including a first organic light emitting layer unit 41, a second organic light emitting layer unit 42, a third organic light emitting layer unit 43, and the like, which correspond to the short-circuit prevention units one by one.
Example 1
Embodiment 1 provides the utility model relates to an OLED device and its preparation method, as shown in FIG. 1, verifies its short circuit prevention effect through ageing.
1. The implementation mode is as follows:
the substrate material is glass;
the material of the first electrode layer is an ITO film with the thickness of 150nm;
the short-circuit prevention layer is square, the cross section of the short-circuit prevention layer is rectangular, the width of the short-circuit prevention layer is 10 micrometers, the size of the square is 200 micrometers by 200 micrometers, and the height of the square is 300nm;
the material of the second electrode layer is Ag, and the thickness is 50nm;
the organic light-emitting layer is of a double-laminated structure, the total thickness is 285nm, and the structure is as follows:
ITO/ NPB: 20 wt.% MoO 3 (60 nm) / TCTA (10 nm) ADN: 5 wt.% DSA-ph. (20 nm) / B3PYMPM (30 nm) /BPhen: 15 wt.% Cs 2 CO 3 (20 nm) / NPB: 20 wt.% MoO 3 (60 nm) / TCTA (10 nm) / ADN: 5 wt.% DSA-ph. (20 nm) / B3PYMPM (30 nm) / BPhen: 15 wt.% Cs 2 CO 3 (25 nm) / Ag (50 nm) ；
the packaging layer 60 can be a glass cover plate packaging mode of UV glue and drying agent;
2. the preparation method of the device comprises the following steps:
s1, less than 2.0X 10 -5 Plating an ITO film (150 nm) on a glass substrate by magnetron sputtering under the base pressure of mbar, and then etching to obtain a patterned ITO glass substrate;
s2, pouring a detergent, cleaning powder and deionized water on the ITO glass substrate, carrying out ultrasonic treatment for 3 times in an ultrasonic machine, carrying out ultrasonic treatment for 90 minutes each time at a power of 900W, replacing the ultrasonic treatment with new deionized water, acetone and isopropanol each time, repeating the steps, drying, and irradiating for 20min at an ultraviolet wavelength of 185nm to obtain a clean ITO glass substrate;
s3, preparing a PI short circuit prevention layer with the thickness of 300nm on the clean ITO glass substrate through a coating process; forming a patterned short-circuit prevention layer through processes of exposure, development and the like;
s4, putting materials to be subjected to evaporation into each boat source or crucible source of an evaporation chamber, putting a clean ITO substrate with a PI short-circuit prevention layer into the evaporation chamber for evaporation, and sequentially depositing each organic light-emitting layer;
s5, switching the evaporation mask plate, and continuously evaporating the material Ag (50 nm) of the second electrode layer;
and S6, packaging the evaporated device through processes of dispensing, pressing, UV curing and baking to prepare the sealed inverted laminated OLED device.
3. Effect testing
1) Test method
a. 100 OLED devices are prepared through the steps, meanwhile, the OLED devices are aged for 240h, and the occurrence condition of short circuit is observed
b. Calculating to obtain the aperture opening ratio of the device
2) Test results
Through aging the 100 devices for 240h, the short circuit failure condition of the devices does not occur, wherein two devices prevent short circuit in a short circuit area (the occurrence time is respectively near 48h and 144 h) in the aging process, and the devices are normally lightened; the short-circuit prevention layer exerts the above-mentioned short-circuit prevention effect.
The aperture opening ratio of the device can reach 95.8%
Example 2
Embodiment 2 provides an OLED device of the present invention and a method for manufacturing the same, as shown in fig. 3.
1. The implementation mode is as follows:
the substrate material is glass;
the material of the first electrode layer is an ITO film with the thickness of 150nm;
the shape of the short-circuit prevention layer is a regular triangle, the cross section of the short-circuit prevention layer is a rectangle, the width of the short-circuit prevention layer is 10 mu m, the side length of the regular triangle is 300 mu m, and the height of the regular triangle is 500nm;
the material of the second electrode layer is Ag, and the thickness is 100nm;
the organic light-emitting layer has a 3-layer structure, the total thickness is 425nm, and the structure is as follows:
ITO/ NPB: 20 wt.% MoO 3 (60 nm) / TCTA (10 nm) ADN: 5 wt.% DSA-ph. (20 nm) / B3PYMPM (30 nm) /BPhen: 15 wt.% Cs 2 CO 3 (20 nm) / NPB: 20 wt.% MoO 3 (60 nm) / TCTA (10 nm) / ADN: 5 wt.% DSA-ph. (20 nm) / B3PYMPM (30 nm) / BPhen: 10 wt.% Cs 2 CO 3 (25 nm) / NPB: 20 wt.% MoO 3 (60 nm) / TCTA (10 nm) ADN: 5 wt.% DSA-ph. (20 nm) / B3PYMPM (30 nm) /BPhen: 15 wt.% Cs 2 CO 3 (20 nm)/Ag (50 nm) ；
the packaging layer 60 can be a glass cover plate packaging mode of UV glue and drying agent;
2. the preparation method of the device comprises the following steps:
s1, less than 2.0X 10 -5 Plating an ITO film (150 nm) on the glass substrate by magnetron sputtering under the base pressure of mbar, and then etching to obtain the patterned ITO glass substrate；
S2, pouring a detergent, cleaning powder and deionized water on the ITO glass substrate, carrying out ultrasonic treatment in an ultrasonic machine for 3 times, wherein the power is 900W every time of 90 minutes, and each ultrasonic treatment is replaced by new deionized water, acetone and isopropanol, repeating the steps, drying, and irradiating for 20min at an ultraviolet wavelength of 185nm to obtain a clean ITO glass substrate;
s3, preparing a PI short circuit prevention layer with the thickness of 300nm on the clean ITO glass substrate through a coating process; forming a patterned short-circuit prevention layer through processes of exposure, development and the like;
s4, putting materials to be subjected to evaporation into each boat source or crucible source of an evaporation chamber, putting a clean ITO substrate with a PI short-circuit prevention layer into the evaporation chamber for evaporation, and sequentially depositing each organic light-emitting layer;
s5, switching the evaporation mask plate, and continuously evaporating the material Ag (100 nm) of the second electrode layer;
and S6, packaging the evaporated device through processes of dispensing, pressing, UV curing and baking to prepare the sealed inverted laminated OLED device.
The foregoing is illustrative of the preferred embodiments of the present invention and is not to be construed as limiting the invention in any way. It should be noted that, for those skilled in the art, without departing from the principle of the present invention, several improvements and modifications can be made, and these improvements and modifications should also be considered as the protection scope of the present invention.
Claims (7)
1. The OLED device with high reliability and high aperture ratio is characterized by comprising a substrate, a first electrode layer, a short-circuit prevention layer, an organic light emitting layer, a second electrode layer and an encapsulation layer which are sequentially stacked; the short circuit prevention layer is a closed structure with a hollow interior, and a plurality of independent short circuit prevention units are formed in the device; the short circuit prevention layer is a high-temperature-resistant short circuit prevention layer; the short-circuit prevention layer divides the organic light emitting layer into a plurality of independent organic light emitting layer units;
the first electrode layer and the second electrode layer respectively correspond to an anode and a cathode of the device; when the device is an inverted device, the first electrode layer is a cathode and the second electrode layer is an anode; when the device is an upright device, the first electrode layer is an anode, and the second electrode layer is a cathode;
the thickness n of the short circuit prevention layer, the thickness m of the organic light emitting layer and the thickness k of the second electrode layer simultaneously satisfy the following relations: n is more than or equal to 4 x k;2 m is more than or equal to n is more than or equal to m; m + k is more than or equal to n.
2. The high-reliability high-aperture-ratio OLED device as claimed in claim 1, wherein the short-circuit prevention layer is a closed pattern with an inner hollow, and the shape is selected from rectangular, triangular, trapezoidal, parallelogram, pentagonal, circular or hexagonal.
3. The high-reliability high-aperture-ratio OLED device according to claim 1, wherein the short-circuit prevention layer is rectangular or regular polygonal in shape.
4. The OLED device with high reliability and high aperture ratio as claimed in claim 1, wherein the short-circuit prevention layer is made of any one of the following high temperature resistant materials: PI, PEEK, PSF, PAR, siN or SiC.
5. The high-reliability high-aperture-ratio OLED device according to claim 1, wherein the first electrode layer is an anode and is made of a material selected from ITO, IZO or FTO.
6. The high reliability high aperture ratio OLED device of claim 1 wherein the organic light emitting layer includes one or more organic functional layers including a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and an electron injection layer.
7. The OLED device with high reliability and high aperture ratio as claimed in claim 1, wherein the second electrode layer is a cathode, and Ag, al or Mg is selected as a material of the second electrode layer.
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