CN218158413U - Silicon optical integrated chip and multi-wavelength parallel optical module component - Google Patents
Silicon optical integrated chip and multi-wavelength parallel optical module component Download PDFInfo
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Abstract
The utility model relates to a silicon optical integrated chip, which comprises a body, this internal integration has the branching unit who is used for the beam split, a modulator unit for modulating light signal, a wavelength division multiplexing waveguide district unit for converting light signal to photocurrent and be used for wavelength division multiplexing, modulator unit and monitoring detector unit all are connected with branching unit, modulator unit includes eight modulators, wavelength division multiplexing waveguide district unit includes two wavelength division multiplexing waveguide districts, eight ways input waveguide that eight modulators pass through the body inputs two wavelength division multiplexing waveguide districts respectively. The multi-wavelength parallel optical module component comprises the silicon optical integrated chip. The utility model discloses a silicon optical integrated chip through integrated branching unit, modulator unit, control detector unit and wavelength division multiplexing waveguide district unit, realizes the transmission of four channels, has advantages such as excellent performance, lower cost, simple structure, reliability height.
Description
Technical Field
The utility model relates to an optical communication technical field specifically is a silicon optical integrated chip and parallel optical module subassembly of multi-wavelength.
Background
For a multichannel parallel optical component, the multichannel parallel optical component is mostly used in scenes with a rate of more than 40Gpbs, such as 40G, 100G, 200G, 400G, 800G and the like, and in data center applications, data transmission with a medium-short distance is usually performed, the transmission distance is 50-2Km, and various products such as SR, DR, FR and the like are used. For high-speed optical modules such as 400G and 800G, the dispersion of an optical fiber is a main factor that restricts the transmission distance of the optical module, and a method for obtaining narrow spectral width and external modulation by using an EML type laser is a technical scheme that stable modulation and low dispersion are obtained, and is also a mainstream choice in the current market, for example, patent CN110764202a. However, the EML type laser chip applied to 400G and 800G rates is a high-end core chip with technical bottlenecks and is expensive, and the parallel optical component means that a plurality of paths of EML chips are adopted, so that the material cost of the optical component is high. How to reduce the cost of the parallel optical component has been the direction of effort in the industry. The silicon optical integrated chip schemes adopted by the patents CN202120785128.9 and CN202110412405.6 are suitable for single-wavelength parallel transmission, and the optical fibers at the optical interface are similar in multi-channel, and cannot be applied to the situation of multi-wavelength parallel transmission such as CWDM 4.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a silicon optical integrated chip and parallel optical module subassembly of multi-wavelength can solve the partial defect among the prior art at least.
In order to achieve the above object, the embodiment of the present invention provides the following technical solutions: the utility model provides a silicon optical integrated chip, includes the body, this internal integration has the branching unit that is used for the branch light, is used for modulating light signal's modulator unit, is used for converting light signal to the control detector unit of photocurrent and is used for wavelength division multiplexing's wavelength division multiplexing waveguide district unit, the modulator unit with control detector unit all with branching unit connects, the modulator unit includes eight modulators, wavelength division multiplexing waveguide district unit includes two wavelength division multiplexing waveguide districts, eight the eight ways input waveguide that the modulator passed through the body inputs two respectively wavelength division multiplexing waveguide district.
Further, the splitter unit includes four 3dB splitters, four 97.
Furthermore, the body is also integrated with four input waveguides, the four input waveguides are all connected into the splitter unit, the end surfaces of the body where the four input waveguides of the body and the eight input waveguides of the body are located are set to be planes or inclined surfaces, and when the end surfaces are set to be inclined surfaces, the inclination angle is 4-8 degrees.
Further, a high-speed signal pad region and a direct-current control signal pad region are integrated on the outer surface of the body.
The embodiment of the utility model provides another kind of technical scheme: a multi-wavelength parallel optical module component comprises the silicon optical integrated chip.
Further, still be equipped with the DSP chip on the PCBA, still include the PCBA, be equipped with the DSP chip on the PCBA, silicon optical integrated chip with the DSP chip interval sets up, silicon optical integrated chip keeps away from one side of DSP chip has connect the FA subassembly.
Furthermore, the PCBA is provided with a window penetrating through the upper surface and the lower surface of the PCBA, and the silicon photonic integrated chip is located in the area where the window is located.
Further, still have laser group, coupling lens group, array isolator, array lens, glass strip, wavelength division multiplexing chip subassembly and heat sink in the region that the window was located, array lens array isolator, coupling lens group and laser group set gradually along DSP chip extremely silicon optical integrated chip's direction, the FA subassembly is established array lens, array isolator, coupling lens group and one side of the structure that laser group constitutes, the laser group, coupling lens group, array isolator with the channel number of array lens is the same.
Furthermore, a supporting plate is arranged at the window, the supporting plate is of a two-layer step structure, the lower step is positioned below the window and completely covers the window and is tightly attached to the PCBA, the other higher step is arranged in the window, and the silicon optical integrated chip is arranged on the higher step.
Furthermore, the two optical fibers of the FA component are connected with the two output waveguides of the silicon optical integrated chip in a one-to-one alignment manner.
Compared with the prior art, the beneficial effects of the utility model are that: the four-channel transmission is realized by adopting the silicon optical integrated chip and the integrated splitter unit, modulator unit, monitoring detector unit and wavelength division multiplexing waveguide area unit, has the advantages of excellent performance, lower cost, simple structure, high reliability and the like, and meets the requirements of low insertion loss, low return loss and low optical crosstalk. In addition, the wavelength division multiplexing waveguide area units are integrated in the silicon optical integrated chip, so that the number of parts can be reduced, the packaging difficulty is reduced, and the yield is improved.
Drawings
Fig. 1 is a schematic diagram of a silicon optical integrated chip of a parallel optical module assembly according to an embodiment of the present invention;
fig. 2 is a perspective view of a parallel optical module assembly according to an embodiment of the present invention;
FIG. 3 is a top view of FIG. 2;
FIG. 4 is a side view of FIG. 2;
FIG. 5 is an enlarged partial schematic view of FIG. 2;
FIG. 6 is a top view of FIG. 5;
fig. 7 is a side view of fig. 5.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
Referring to fig. 1, an embodiment of the present invention provides a silicon optical integrated chip, which includes a body, the body is integrated with a splitter unit for splitting, a modulator unit for modulating an optical signal, a monitoring detector unit for converting the optical signal into a photocurrent, and a wavelength division multiplexing waveguide area unit for wavelength division multiplexing, the modulator unit and the monitoring detector unit are all connected to the splitter unit, the modulator unit includes eight modulators, the wavelength division multiplexing waveguide area unit includes two wavelength division multiplexing waveguide areas, eight modulators input two wavelength division multiplexing waveguide areas respectively through eight input waveguides of the body. In this embodiment, a silicon optical integrated chip is adopted, and four-channel transmission is realized through an integrated splitter unit, a modulator unit, a monitoring detector unit and a wavelength division multiplexing waveguide region unit, so that the advantages of excellent performance, low cost, simple structure, high reliability and the like are achieved, and the requirements of low insertion loss, low return loss and low optical crosstalk are met. In addition, the wavelength division multiplexing waveguide area units are integrated in the silicon optical integrated chip, so that the number of parts can be reduced, the packaging difficulty is reduced, and the yield is improved.
As an optimization scheme of the embodiment of the present invention, please refer to fig. 1, a silicon optical integrated chip adopts a rectangular parallelepiped structure, 4 input waveguides are integrated inside the chip, the reference numbers in the corresponding diagrams are 101-1, 101-2, 101-3, and 101-4, respectively, four 3dB splitters are further integrated, the reference numbers in the corresponding diagrams are 102-1, 102-2, 102-3, and 102-4, respectively, four 97 are integrated: the 3-proportion splitter is respectively provided with the reference numbers of 103-1, 103-3, 103-5 and 103-7 in the corresponding figures, and integrates four 3:97 proportion branching unit, corresponding to numbers in the figure being 103-2, 103-4, 103-6, 103-8 respectively, eight modulators can be MZ waveguide type modulators (MZ (Mach-Zehnder abbreviation). Two-person name's joint name, chinese can be translated to ' Mach-Zehnder '), corresponding to numbers in the figure being 104-1, 104-2, 104-3, 104-4, 104-5, 104-6, 104-7, 104-8 respectively, eight input waveguides are further integrated inside the chip, corresponding to numbers in the figure being 105-1, 105-2, 105-3, 105-4, 105-5, 105-6, 105-7, 105-8 respectively, eight monitoring detectors are further integrated, corresponding to numbers in the figure being 106-1, 106-2, 106-3, 106-4, 106-5, 106-6, 106-7, 106-8, 106-1, 106-4, 106-5, 106-6, 106-7, 106-8 respectively, and also integrated with wavelength division multiplexing zone waveguide zone 107, wavelength division multiplexing zone-2, wavelength division multiplexing zone-output waveguide zone 107, and wavelength division multiplexing zone 2. A high-speed signal pad region 110 and a dc control signal pad region 109 are integrated on the outer surface of the chip.
Referring to fig. 1, 4 input waveguides are disposed at the lowest end of the chip, corresponding to the output waveguides with reference numbers 101-1, 101-2, 101-3, and 101-4,2 in the drawing, respectively, and corresponding to the output waveguides with reference numbers 108-1 and 108-2 in the drawing, the total number of 6 waveguides is located at the boundary end of the silicon optical integrated chip. Wherein, the 4 input waveguides 101-1, 101-2, 101-3 and 101-4 are positioned at the left side, and the 4 input waveguides 101-1, 101-2, 101-3 and 101-4 are distributed at equal intervals, preferably 0.8-2 mm; the output waveguide 108-1 and the output waveguide 108-2 are arranged on the right side of the input waveguide 101-4 in sequence, and the distance between the input waveguide 101-4 and the output waveguide 108-1 is preferably 1-2 mm.
Further optimizing the scheme, please refer to fig. 1, four 3dB splitters 102-1, 102-2, 102-3 and 102-4 are sequentially arranged above four input waveguides 101-1, 101-2, 101-3 and 101-4 of the silicon optical integrated chip, wherein the input waveguide 101-1 corresponds to the 3dB splitter 102-1, the input waveguide 101-2 corresponds to the 3dB splitter 102-2, the input waveguide 101-3 corresponds to the 3dB splitter 102-3, and the input waveguide 101-4 corresponds to the 3dB splitter 102-4; above the 3dB splitter 102-1 is arranged 97:3 proportional splitters 103-1 and 3:97 proportional splitter 103-2, where 97:3 splitter 103-1 is located on the left side, 97 is arranged above 3dB splitter 102-2: 3 proportional splitters 103-3 and 3:97 proportional splitter 103-4, wherein 97:3 splitter 103-3 is located on the left side, 3: the right side of the 97-scale splitter 103-2 is 97: 3-ratio splitter 103-3, 97 is arranged above 3dB splitter 102-3: 3 proportional splitters 103-5 and 3:97 proportional splitter 103-6, where 97: the 3 splitter 103-5 is located on the left side, 97 is provided above the 3dB splitter 102-4: 3 proportional splitters 103-7 and 3:97 proportional splitter 103-8, where 97:3 splitter 103-7 is located on the left side; at 97: the 3-ratio splitter 103-1 outputs two waveguides, where the split ratio of the left waveguide arm is 97%, the MZ waveguide modulator 104-1 is disposed above it, the split ratio of the right waveguide arm is 3%, the monitor detector 106-1 is disposed above it, and similarly, at 97: the 3-ratio splitter 103-3 outputs two waveguides, where the split ratio of the left waveguide arm is 97%, the MZ waveguide modulator 104-3 is disposed above it, the split ratio of the right waveguide arm is 3%, the monitor detector 106-3 is disposed above it, and at 97: the 3-ratio splitter 103-5 outputs two waveguides, where the split ratio of the left waveguide arm is 97%, the MZ waveguide modulator 104-5 is disposed above it, the split ratio of the right waveguide arm is 3%, the monitor detector 106-5 is disposed above it, and at 97: the 3-ratio splitter 103-7 outputs two waveguides, wherein the split ratio of the left waveguide arm is 97%, the MZ waveguide modulator 104-7 is arranged above the left waveguide arm, the split ratio of the right waveguide arm is 3%, the monitoring detector 106-7 is arranged above the right waveguide arm, and similarly, in the 3: the 97-ratio splitter 103-2 outputs two waveguides, wherein the split ratio of the left waveguide arm is 3%, the monitoring detector 106-2 is arranged above the left waveguide arm, the split ratio of the right waveguide arm is 97%, the MZ waveguide modulator 104-2 is arranged above the right waveguide arm, and in the step 3: the 97-ratio splitter 103-4 outputs two waveguides, wherein the split ratio of the left waveguide arm is 3%, the monitoring detector 106-4 is arranged above the left waveguide arm, the split ratio of the right waveguide arm is 97%, the MZ waveguide modulator 104-4 is arranged above the right waveguide arm, and the ratio of the left waveguide arm to the right waveguide arm is 3: the 97-ratio splitter 103-6 outputs two waveguides, wherein the split ratio of the left waveguide arm is 3%, the monitoring detector 106-6 is arranged above the left waveguide arm, the split ratio of the right waveguide arm is 97%, the MZ waveguide modulator 104-6 is arranged above the right waveguide arm, and the ratio of the left waveguide arm to the right waveguide arm is 3: the 97-ratio splitter 103-8 outputs two waveguides, wherein the left waveguide arm has a splitting ratio of 3%, the monitoring probe 106-8 is disposed above the left waveguide arm, the right waveguide arm has a splitting ratio of 97%, and the MZ waveguide modulator 104-8 is disposed above the right waveguide arm. 3:97 proportional splitter and 97: the 3-proportion splitter is only an optimal proportion, the splitting ratio is not limited, the splitting ratio can be adjusted according to the power requirement, and the adjusting range is 95: 5-99.5: between 0.5 or 0.5:99.5 to 5:95 may be used. Eight MZ waveguide type modulators are arranged from left to right, the corresponding reference numbers are 104-1, 104-2, 104-3, 104-4, 104-5, 104-6, 104-7 and 104-8 in sequence, the eight MZ waveguide type modulators are connected with a wavelength division multiplexing waveguide area 107-1 and a wavelength division multiplexing waveguide area 107-2 in sequence through an input waveguide 105-1, an input waveguide 105-2, an input waveguide 105-3, an input waveguide 105-4, an input waveguide 105-5, an input waveguide 105-6, an input waveguide 105-7 and an input waveguide 105-8, wherein the input waveguide 105-1, the input waveguide 105-2, the input waveguide 105-3 and the input waveguide 105-4 are connected with the wavelength division multiplexing waveguide area 107-1, and the input waveguide 105-5, the input waveguide 105-6, the input waveguide 105-7 and the input waveguide 105-8 are connected with the wavelength division multiplexing waveguide area 107-2. The wavelength division multiplexing waveguide region 107-1 and the wavelength division multiplexing waveguide region 107-2 are respectively connected with the output waveguide 108-1 and the output waveguide 108-2, wherein the input waveguide 105-1, the input waveguide 105-2, the input waveguide 105-3, the input waveguide 105-4, the wavelength division multiplexing waveguide region 107-1 and the output waveguide 108-1 are a group of wavelength division multiplexing elements, and the input waveguide 105-5, the input waveguide 105-6, the input waveguide 105-7, the input waveguide 105-8, the wavelength division multiplexing waveguide region 107-2 and the output waveguide 108-2 are a group of wavelength division multiplexing elements. On the left side of the eight MZ waveguide type modulator regions are dc control signal pad regions 109, and on the top thereof are high speed signal pad regions 110.
To further optimize the above solution, referring to fig. 1, the high-speed signal pad region 110 is located on one side of the long boundary of the silicon photonic integrated chip and is parallel to the long boundary, and the dc control signal pad region 109 is located on one side of the short boundary of the silicon photonic integrated chip and is parallel to the short boundary.
Further optimizing the above scheme, referring to fig. 1, the input waveguides 101-1, 101-2, 101-3, and 101-4 of the silicon photonic integrated chip are specially designed mode-stable waveguides, have a length of more than 1 mm and an insertion loss of about 1dB, so that any light beam input from the outside has a stable single-mode field after passing through the input waveguides 101-1, 101-2, 101-3, and 101-4, and the any light beam includes an obliquely incident light beam, a light beam exceeding or smaller than a theoretical single-mode aperture of the waveguide, an uneven light beam, a light beam with a multi-transverse-mode field, a light beam with a multi-peak intensity, and the like. Because the input waveguide 101-1, the input waveguide 101-2, the input waveguide 101-3 and the input waveguide 101-4 are mode-stabilizing waveguides, the light wave input to the 3dB splitter is a uniform single mode field, the splitting ratio of the 3dB splitter is very stable, and four waveguides are ensured: 3 proportion branching unit, four 3: the input mode field stability of the 97 th ratio splitter, eight MZ waveguide modulators and eight monitoring detectors.
In order to further optimize the above solution, please refer to fig. 1, the end surfaces of the silicon photonic integrated chip where the input waveguide 101-1, the input waveguide 101-2, the input waveguide 101-3, the input waveguide 101-4, the output waveguide 108-1, and the output waveguide 108-2 are located are set to be planar or inclined, and when the end surfaces are set to be inclined, the inclined angle is preferably 4 to 8 °.
Further optimizing the above scheme, please refer to fig. 1, the optical structures of the wdm waveguide region 107-1 and the wdm waveguide region 107-2 are not limited, and may be AWG (arrayed waveguide grating), MZ interference type, etched grating type, etc., and function to combine four wavelengths from the input waveguide 105-1, the input waveguide 105-2, the input waveguide 105-3, the input waveguide 105-4, the input waveguide 105-5, the input waveguide 105-6, the input waveguide 105-7, and the input waveguide 105-8 to the output waveguide 108-1 and the output waveguide 108-2, respectively, and achieve the requirements of low insertion loss, low return loss, and low optical crosstalk. The material of the silicon optical integrated chip is not limited to silicon-based materials and thin-film lithium niobate materials.
Referring to fig. 1 to 7, an embodiment of the present invention provides a multi-wavelength parallel optical module assembly, including a PCBA201, an LC/XMD type optical interface 202-1, an LC/XMD type optical interface 202-2 (XMD: 10Gbit/s minimum Device), a silicon optical integrated chip 203, a laser group 204, a coupling lens group 205, an array isolator 206, an array lens 207, a glass strip 208, an FA component 209, an optical fiber cable 210-1, an optical fiber cable 210-2, a DSP (digital signal processing) chip 211, a thermal dust 501, and a supporting board 401. The DSP chip 211 is disposed in the middle of the upper surface of the PCBA201, and the window 212 is disposed about 3/4 of the right side of the upper surface, wherein the window 212 completely penetrates the PCBA201. The silicon photonic integrated chip 203, the laser group 204, the coupling lens group 205, the array isolator 206, the array lens 207, the glass strip 208, the FA (fiber array) component 209, and the thermal dust 501 are all located within the area of the window 212. The support plate 401 has two steps, a high step 502 and a low step, wherein the low step is located below the window 212 and completely covers the window 212, is adjacent to the PCBA201, and is bonded below the PCBA201 by curing the structural adhesive. The high step 502 of the support plate 401 is disposed completely inside the window 212. The support plate 401 is rectangular, and a gap of 0.05-0.15 mm is reserved between the periphery and the window 212. On the high step 502 of the supporting plate 401, the silicon optical integrated chip 203 is fixed by high heat-conducting glue, the hot dust 501 is arranged above the low step of the supporting plate 401 and inside the window 212, and the hot dust 501 is adhered above the low step of the supporting plate 401 by high heat-conducting glue. Above the hot dust 501 are arranged a laser group 204, a coupling lens group 205, an array isolator 206 and an array lens 207. The silicon photonic integrated chip 203 completely covers the upper step 502 of the support plate 401, and the upper surface of the silicon photonic integrated chip 203 is parallel to or slightly higher than the upper surface of the PCBA201 by about 0-0.15mm in height.
As an optimization scheme of the embodiment of the present invention, please refer to fig. 3, the setting direction of the silicon optical integrated chip 203 satisfies: the high-speed signal pad region 110 is located at the left side near the left boundary of the window 212, and the dc control signal pad region 109 is located at the lower side near the lower boundary of the window 212. In this manner, the 6 input/output waveguides of the silicon photonic integrated chip 203 are all located on the right side. The PCBA201 may use the DSP chip 211 to directly drive the silicon photonic integrated chip 203 or may use a hierarchical drive, that is, a driver (driving) chip is used to drive the silicon photonic integrated chip 203 and the DSP chip 211 is used to drive the driver chip, according to different electrical chip schemes. The present embodiment adopts the first scheme. According to the scheme, a high-frequency routing wire and a lead bonding pad are arranged at the left side boundary of the PCBA close to the window 212, the lead bonding pad is directly subjected to gold wire bonding with the high-speed signal bonding pad area 110 of the silicon optical integrated chip 203, a control signal routing wire and a lead bonding pad are arranged at the lower side boundary of the PCBA close to the window 212, and the lead bonding pad is directly subjected to gold wire bonding with the direct-current control signal bonding pad area 109 of the silicon optical integrated chip 203.
As an optimization scheme of the embodiment of the present invention, please refer to fig. 3 and 4, the whole optical module assembly includes two parts, the first part is the PCBA201, and the rest parts are the light path parts. The optical path portion comprises two groups of input and output elements, wherein the input elements comprise a silicon optical integrated chip 203, a laser group 204, a coupling lens group 205, an array isolator 206 and an array lens 207, and the output elements comprise an FA component 209, an optical fiber cable 210-1, an optical fiber cable 210-2, an LC/XMD type optical interface 202-1 and an LC/XMD type optical interface 202-2. The number of channels of the laser group 204, the coupling lens group 205, the array isolator 206 and the array lens 207 of the input element is the same, and 4 channels are adopted in this embodiment, that is, the laser group 204 includes four laser chips, the wavelength is preferably four wavelengths of CWDM4, such as 1271nm, 1291nm, 1311nm and 1331nm, each laser chip is disposed on a carrier made of high thermal conductive material and is distributed at equal intervals, and a capacitor is disposed on the upper surface of the carrier made of high thermal conductive material and on the side edge of the laser chip for filtering. The laser chip is a direct current type high-power laser chip, and the chip only supplies direct current without increasing high-frequency signals. A thermistor (not shown) is disposed on the side of the laser group 204 and on the top surface of the hot dust 501 for monitoring the temperature of the laser chip. The physical parameters of the four channels of the coupling lens group 205, the array isolator 206 and the array lens 207 are the same, and the channels are distributed at equal intervals, and the intervals are the same as those of the lasers. The light-emitting direction of the laser chip faces to the left side, i.e. the direction of the silicon photonic integrated chip, the light-emitting direction of the laser chip, the coupling lens group 205 and the array isolator 206 are all parallel to the short boundary of the silicon photonic integrated chip, and the light-emitting direction of the laser chip and the coupling lens group 205 are coaxially arranged, so that the light beam emitted by the laser chip is still parallel to the short boundary of the silicon photonic integrated chip 203 after passing through the coupling lens group 205 and the array isolator 206.
As an optimization scheme of the embodiment of the present invention, please refer to fig. 5, fig. 6, and fig. 7, the array lens 207 is disposed on the right side of the silicon photonic integrated chip 203, and optically, lens centers of four channels of the array lens 207 are aligned with the input waveguide 101-1, the input waveguide 101-2, the input waveguide 101-3, and the input waveguide 101-4 of the silicon photonic integrated chip one by one. The array lens 207 is attached to the hot dust 501 by a high-precision automatic chip mounter and fixed by glue. On the right side of the array lens 207 is an array isolator 206, which is a conventional magneto-optical isolator and is composed of four magneto-optical crystals and magnetic blocks, and the centers of the magneto-optical crystals are aligned with the centers of the four lenses of the array lens 207 one by one. On the right side of the array isolator 206 is a coupling lens group 205, the coupling lens group 205 is four individual lenses, and after being coupled by a high precision coupling machine, the coupling lens group is directly fixed on the hot dust 501 by ultraviolet dual curing glue. To the right of the coupling lens group 205 is a laser group 204, the laser group 204 being located to the right of the hot dust 401.
Referring to fig. 5, 6 and 7 as an optimization scheme of the embodiment of the present invention, the output device includes an FA component 209, an optical fiber cable 210-1, an optical fiber cable 210-2, an LC/XMD type optical interface 202-1 and an LC/XMD type optical interface 202-2. The FA component 209 is a dual-channel element, and the left ends of the optical fiber cables 210-1 and 210-2 are arranged inside the FA component 209 and fixed by glue. The two optical fibers of the FA component 209 are connected with the output waveguides 108-1 and 108-2 of the silicon optical integrated chip in a one-to-one alignment manner. The FA component 209, the fiber optic cable 210, the LC/XMD type optical interface 202-1 and the LC/XMD type optical interface 202-2 constitute a semi-finished component, which facilitates the coupling and packaging of the whole optical component. The FA component 209 and the silicon photonic integrated chip 203 are precisely positioned by a high-precision coupling machine, after high-precision coupling, refractive index matching glue is coated between the FA (fiber array) component 209 and the silicon photonic integrated chip 203, a glass strip 208 is arranged, and the glass strip 208 is used for enhancing the bonding force between the FA component 209 and the silicon photonic integrated chip 203. The FA component 209 is not in direct contact with the hot dust 401, but is suspended above the hot dust 401. The FA component 209 is integral with the fiber optic cable 210, the fiber optic cable 210 is suspended above the PCBA201, and the ends of the fiber optic cable 210 connect the LC/XMD-type optical interface 202-1, the LC/XMD-type optical interface 202-2, the LC/XMD-type optical interface 202-1, and the LC/XMD-type optical interface 202-2 to optical interfaces that meet international standards.
Referring to fig. 1 to 7, the optical path transmission path of the multi-wavelength parallel device assembly includes: the laser chip emits a direct current light wave, which enters the input waveguide 101 of the silicon photonic integrated chip 203 after passing through the coupling lens group 205, the array isolator 206, and the array lens 207, and then passes through the 3dB splitters 102 and 97:3 proportion splitter/3: after the 97-ratio splitter, the main optical wave enters the MZ waveguide modulator 104, and the small optical wave enters the monitoring detector 108, so that the energy output of the laser chip can be controlled in a feedback manner by monitoring the energy value of the monitoring detector 108. The optical waves entering the MZ waveguide modulator 104 are modulated by the high frequency of the MZ waveguide modulator 104 to become alternating high frequency signal beams, but the transverse mode field of the beams still satisfies the single mode condition, and the high frequency signal beams are transmitted to the wavelength division multiplexing waveguide region 107 through the waveguide 105, then are multiplexed to the output waveguide 108, then enter the FA component 209, and then enter the LC/XMD type optical interface 202-1 and the LC/XMD type optical interface 202-2 through the fiber cable 210. When the optical module component works, the LC/XMD type optical interface is externally connected with a standard optical fiber jumper.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (10)
1. A silicon optical integrated chip comprises a body, and is characterized in that: the optical wavelength division multiplexing device comprises a body, a splitter unit, a modulator unit, a monitoring detector unit and a wavelength division multiplexing waveguide area unit, wherein the splitter unit is used for splitting light, the modulator unit is used for modulating light signals, the monitoring detector unit is used for converting the light signals into light currents, and the wavelength division multiplexing waveguide area unit is used for wavelength division multiplexing.
2. The silicon photonic integrated chip of claim 1, wherein: the splitter unit includes four 3dB splitters, four 97-3 proportional splitters, and four 3.
3. The silicon photonic integrated chip of claim 1, wherein: the splitter unit is characterized in that the body is further integrated with four input waveguides, the four input waveguides are all connected into the splitter unit, the end faces of the body where the four input waveguides of the body and the eight input waveguides of the body are located are arranged to be planes or inclined planes, and when the end faces are arranged to be inclined planes, the inclination angle is 4-8 degrees.
4. The silicon photonic integrated chip of claim 1, wherein: the outer surface of the body is integrated with a high-speed signal pad area and a direct-current control signal pad area.
5. A multi-wavelength parallel optical module assembly, comprising: comprising a silicon photonic integrated chip as claimed in any of claims 1 to 4.
6. A multiple wavelength parallel optical module assembly according to claim 5, wherein: still include PCBA, PCBA is last to be equipped with the DSP chip, silicon optical integrated chip with DSP chip interval sets up, silicon optical integrated chip keeps away from one side of DSP chip has connect the FA subassembly.
7. A multiple wavelength parallel optical module assembly according to claim 6, wherein: the PCBA is provided with a window penetrating through the upper surface and the lower surface of the PCBA, and the silicon optical integrated chip is located in the area where the window is located.
8. A multiple wavelength parallel optical module assembly according to claim 7, wherein: the window is characterized in that a laser group, a coupling lens group, an array isolator, an array lens, a glass strip, a wavelength division multiplexing chip component and a heat sink are further arranged in the area where the window is located, the array lens, the array isolator, the coupling lens group and the laser group are sequentially arranged in the direction from the DSP chip to the silicon optical integrated chip, the FA component is arranged on one side of the structure formed by the array lens, the array isolator, the coupling lens group and the laser group, and the number of channels of the laser group, the coupling lens group, the array isolator and the array lens is the same.
9. A multiple wavelength parallel optical module assembly according to claim 7, wherein: the window is provided with a supporting plate, the supporting plate is of a two-layer step structure, the lower step is positioned below the window and completely covers the window and is tightly attached to the PCBA, the other higher step is arranged in the window, and the silicon optical integrated chip is arranged on the higher step.
10. A multiple wavelength parallel optical module assembly according to claim 6, wherein: and the two optical fibers of the FA component are connected with the two output waveguides of the silicon optical integrated chip in a one-to-one alignment manner.
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| CN202222452180.XU CN218158413U (en) | 2022-09-16 | 2022-09-16 | Silicon optical integrated chip and multi-wavelength parallel optical module component |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116047680A (en) * | 2023-04-03 | 2023-05-02 | 众瑞速联（武汉）科技有限公司 | Miniaturized silicon optical chip, silicon optical component and COB component thereof |
| CN116184584A (en) * | 2023-02-21 | 2023-05-30 | 讯芸电子科技(中山)有限公司 | 400G silicon light integrated optical module with embedded TEC substrate |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116184584A (en) * | 2023-02-21 | 2023-05-30 | 讯芸电子科技(中山)有限公司 | 400G silicon light integrated optical module with embedded TEC substrate |
| CN116184584B (en) * | 2023-02-21 | 2023-11-03 | 讯芸电子科技(中山)有限公司 | 400G silicon light integrated optical module with embedded TEC substrate |
| CN116047680A (en) * | 2023-04-03 | 2023-05-02 | 众瑞速联（武汉）科技有限公司 | Miniaturized silicon optical chip, silicon optical component and COB component thereof |
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