CN218115584U - Production device for extra-thin copper foil with carrier - Google Patents
Production device for extra-thin copper foil with carrier Download PDFInfo
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- CN218115584U CN218115584U CN202222007018.7U CN202222007018U CN218115584U CN 218115584 U CN218115584 U CN 218115584U CN 202222007018 U CN202222007018 U CN 202222007018U CN 218115584 U CN218115584 U CN 218115584U
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Abstract
The utility model relates to an attach apparatus for producing of carrier ultra-thin copper foil, including locating sputtering evaporation module and the external electroplating thickening module in the vacuum chamber, still be equipped with the winding system who is used for lasting transport carrier foil in the vacuum chamber. The sputtering evaporation module comprises an unwinding bin, a first metal layer vacuum evaporation bin, a second metal layer vacuum evaporation bin, a third metal layer vacuum evaporation bin and a winding bin which are sequentially arranged and communicated with one another, wherein the second metal layer vacuum evaporation bin is internally provided with a second metal layer vacuum evaporation module which is right opposite to the front surface of the carrier foil, and the second metal layer vacuum evaporation module comprises metal sources and ligand molecule sources which are arranged in a staggered manner. By alternately arranging the ligand molecule sources near the metal evaporation source of the evaporation bin, metal and organic micromolecules serving as ligands can be simultaneously evaporated when the stripping layer of the copper foil is manufactured, so that a metal complex film layer with stable components is formed in situ, and the stable and consistent carrier stripping capability of a product can be maintained.
Description
Technical Field
The utility model belongs to an extremely thin copper foil technical field especially relates to an attach apparatus for producing of carrier ultra-thin copper foil.
Background
In recent years, the electronic product industry has been developed rapidly, and the whole product has become thinner and thinner on the basis of more and more complete functions, wherein the integrated circuit board manufacturing technology is undergoing rapid update iteration. Conventional methods for fabricating integrated circuit boards have become increasingly difficult to adapt to the circuit fabrication requirements of smaller line widths and pitches, and thus improved semi-additive methods (msaps) have come into force. An extra thin copper foil (a copper foil with the thickness less than 5 mu m) is needed in the mSAP process to achieve the purpose of line flash etching, but the extra thin copper foil is complex in preparation method and low in product quality stability, so that the extra thin copper foil is a great challenge in the development process of the current integrated circuit industry.
The extra thin copper foil with a carrier is a current research focus because of its extra thin thickness and tensile strength, which makes it difficult to perform surface treatment by existing surface treatment equipment. The ultra-thin copper foil with the carrier mainly comprises a carrier layer which plays a role of physical support, a barrier layer which prevents mutual diffusion of functional layers, a stripping layer which realizes the function of film separation and an ultra-thin copper layer, wherein the stripping layer is the key in the whole manufacturing process of the ultra-thin copper foil with the carrier. The materials commonly used as the stripping layer at present are divided into two main types of metal and nonmetal: the metal stripping layer material comprises a simple substance or an alloy of Ni/Mo/Co/Cr/Fe/Ti/W/Zn, and the preparation method comprises electroplating, chemical plating, magnetron sputtering and physical evaporation; the nonmetal stripping layer material comprises carbon, carboxylic acid micromolecules, imidazole micromolecules and a mixture thereof, and the preparation method comprises the modes of dipping, spraying, coating and the like. However, the existing process methods have some problems, which cause a series of problems of low controllability of mass production of products, uneven product quality, low qualification rate and the like. For example, when a metal or alloy is electroplated as a peeling layer, the magnitude of the peeling force is greatly influenced by the metal components and the interface state, and the feasibility window interval is small, so that continuous and stable production can be realized only by matching with a severe process control system. The metal stripping layer prepared by the vacuum coating method can improve the continuity and uniformity of a film layer, but sputtered metal often has strong binding force, particularly after the ultrathin copper foil passes through a high-temperature pressing plate, the binding force of the stripping layer is large, and local adhesion is easy to occur when the surface roughness of a carrier substrate is large, so that the requirement on the surface profile of the carrier foil is high, and the production difficulty is increased. When the nonmetal material is prepared by adopting methods such as dipping, coating and the like to be used as the stripping layer, the stripping effect is good, but the stripping layer is usually discontinuous and uneven, or the problem that local electroplating cannot be carried out during electroplating thickening and the like often occurs, so that the problems of local adhesion and a large number of pinholes in the ultrathin copper foil are easy to occur.
On one hand, the vacuum coating method has the characteristics of continuous film layer, uniform thickness and the like, and particularly, a copper seed layer is sputtered on the surface of the stripping layer, so that the problem of pinholes in subsequent electroplating thickening can be greatly reduced. On the other hand, some organic small molecules can provide controllable peeling strength, but the film forming uniformity is poor, and the continuity of production and the stability of product quality are greatly reduced. Therefore, it is the biggest challenge in the manufacture of carrier copper foil to develop a new release layer with stable release capability and better continuity.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem that a device for producing attaches carrier ultra-thin copper foil is provided, solve and attach the difficult, poor, the low problem of qualification rate of carrier ultra-thin copper foil production at present.
The utility model provides a technical scheme that its technical problem adopted is: the production device of the ultra-thin copper foil with the carrier comprises a sputtering evaporation module arranged in a vacuum chamber and an external electroplating thickening module, wherein a winding system for continuously transferring the carrier foil is also arranged in the vacuum chamber, and is characterized in that the sputtering evaporation module comprises an unwinding chamber, a first metal layer vacuum sputtering chamber, a second metal layer vacuum evaporation chamber, a third metal layer vacuum sputtering chamber and a winding chamber which are sequentially arranged and communicated with each other, the winding system enables the carrier foil to be unwound from the unwinding chamber, then sequentially passes through the first metal layer vacuum sputtering chamber, the second metal layer vacuum evaporation chamber and the third metal layer vacuum sputtering chamber, and finally enters the winding chamber to complete winding,
an ion source processing module and a first metal layer vacuum sputtering module which are opposite to the front surface of the carrier foil are arranged in the first metal layer vacuum sputtering bin;
a second metal layer vacuum evaporation module which is opposite to the front surface of the carrier foil is arranged in the second metal layer vacuum evaporation bin, and the second metal layer vacuum evaporation module comprises metal sources and ligand molecule sources which are arranged in a staggered mode;
and a third metal layer vacuum sputtering module which is right opposite to the front surface of the carrier foil is arranged in the third metal layer vacuum sputtering bin.
Further, the electroplating thickening module comprises a winding system, and an alkali plating tank, a washing tank I, an acid plating tank, a washing tank II, a roughening tank, a curing tank, a washing tank, a blackening tank, a washing tank III, an ashing tank, a washing tank IV, a passivation tank, a washing tank V, a coupling agent coating tank and an oven which are sequentially arranged.
Furthermore, in the unreeling bin, the first metal layer vacuum sputtering bin, the second metal layer vacuum evaporation bin, the third metal layer vacuum sputtering bin and the reeling bin, an auxiliary air exhaust assembly is arranged at the joint of the two adjacent bins.
Further, the winding system including locate unreel in the storehouse roll, tension roll, the first metal level temperature control roller in the first metal level vacuum sputtering storehouse, the second metal level temperature control roller in the second metal level vacuum evaporation storehouse, the third metal level temperature control roller in the third metal level vacuum sputtering storehouse and the wind-up roll in the rolling storehouse, be equipped with the transition roller between tension roll, first metal level temperature control roller, second metal level temperature control roller, the third metal level temperature control roller.
Furthermore, a pressure sensor, a servo motor and a PLC control cabinet which are used for controlling the tension taper of the carrier foil roll are arranged in the tension roller.
Furthermore, the cathode of the first metal layer vacuum sputtering module target is a planar target or a cylindrical target, and the target cathode is distributed on one side of the first metal layer temperature control roller.
Further, an ion source in the ion source processing module is arranged at an inlet of the first metal layer vacuum sputtering bin.
Further, the metal source and the ligand molecule source are alternately arranged on one side of the second metal layer temperature control roller.
Furthermore, the cathode of the vacuum sputtering module target of the third metal layer is a planar target or a cylindrical target, and the target cathode is distributed on one side of the temperature control roller of the third metal layer.
Further, the metal source may be evaporated with Cu, ni, co, zr, zn, fe or an alloy thereof, and the ligand molecule source may be evaporated with terephthalic acid, 2-amino-terephthalic acid, trimesic acid, dimethylimidazole or a mixture thereof. .
Advantageous effects
The utility model discloses a mode that sputtering and coating by vaporization combine keeps better rete continuity when peeling off the power stability, has adhesion and pinhole to produce less, can maintain higher product percent of pass and production continuity, greatly improves productivity and benefit.
The utility model discloses set up ligand molecule source near the metal evaporation coating source in evaporation coating storehouse in turn, make and pass through the utility model discloses during the peel ply of preparation copper foil, can evaporate metal and the organic micromolecule as the ligand simultaneously, so the normal position forms the metal complex rete that the component is stable, makes the product can maintain the carrier stripping ability of stable unanimity.
Adopt the utility model discloses the extra-thin copper foil of attached carrier of production has advantages such as process control is stable, each functional layer is even in succession and carrier layer separating force is unanimous, and this method can satisfy mass continuous production's stability of quality moreover. In the vacuum coating working section, firstly, the surface of the carrier layer is treated by an ion source and the like, so that the surface is clean and uniform; and then plating a layer of dense and stable metals such as nickel, molybdenum and the like on the surface of the carrier layer by a magnetron sputtering technology to be used as a barrier layer. And then preparing a layer of metal complex serving as a carrier stripping layer on the surface of the barrier metal by using an evaporation technology. And then sputtering a layer of copper on the surface of the stripping layer to be used as a seed layer for subsequent electroplating. The method realizes the stable separation of the carrier layers in a mode of combining magnetron sputtering and evaporation, and simultaneously the process method of vacuum coating ensures the thickness uniformity, film continuity and quality stability of each functional layer, so the process method can easily realize the mass production and quality stability of products and has a significant promotion effect on the development of the ultra-fine circuit board.
Drawings
Fig. 1 is a schematic structural diagram of a sputtering evaporation module of a carrier-attached ultrathin copper foil production device.
Fig. 2 is a schematic flow diagram of an electroplating thickening module of a carrier-attached ultra-thin copper foil production device.
Wherein, 1-unwinding the storehouse; 2-a first metal layer vacuum sputtering bin; 3-a second metal layer vacuum evaporation bin; 4-a third metal layer vacuum sputtering bin; 5, rolling a bin; 6-unwinding roller; 7-a tension roller; 8-a transition roll; 9-a first metal layer temperature control roller; 10-a second metal layer temperature control roller; 11-a third metal layer temperature control roller; 12-a wind-up roll; 13-an ion source processing module; 14-a first metal layer vacuum sputtering module; 15-a metal source; a source of 16-ligand molecules; 17-a third metal layer vacuum sputtering module; 18-an auxiliary pumping assembly; 19-electroplating thickening module
Like reference symbols in the various drawings indicate like elements.
Detailed Description
The present invention will be further described with reference to the following specific examples. It should be understood that these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. Furthermore, it should be understood that various changes and modifications of the present invention may be made by those skilled in the art after reading the teachings of the present invention, and these equivalents also fall within the scope of the appended claims.
As shown in fig. 1 and 2, the device for producing the carrier-attached ultrathin copper foil comprises a sputtering evaporation module and an external electroplating thickening module 19 which are arranged in a vacuum chamber, and a winding system for continuously transferring the carrier foil is further arranged in the vacuum chamber. The sputtering evaporation module comprises an unwinding bin 1, a first metal layer vacuum evaporation bin 2, a second metal layer vacuum evaporation bin 3, a third metal layer vacuum evaporation bin 4 and a winding bin 5 which are sequentially arranged and communicated with one another. The winding system enables the carrier foil to be unwound from the unwinding bin 1, then sequentially passes through the first metal layer vacuum sputtering bin 2, the second metal layer vacuum evaporation bin 3 and the third metal layer vacuum sputtering bin 4, and finally enters the winding bin 5 to complete winding. The carrier foil mainly refers to copper foil, and can be replaced by metal foil such as aluminum foil or polymer film such as PI film according to the situation.
An ion source processing module 13 and a first metal layer vacuum sputtering module 14 which are right opposite to the front surface of the carrier foil are arranged in the first metal layer vacuum sputtering bin 2. And sputtering a metal coating barrier layer on the surface of the carrier foil through the first metal layer vacuum sputtering module 14.
The ion source among the ion source processing module 13 is located the entrance in first metal level vacuum sputtering storehouse 2, the ion source includes but not limited to hall ion source, anode layer ion source, electric arc preliminary treatment, koufman ion source, ICP ion source, corona, plasma bombardment etc.. Gases used include, but are not limited to, argon, nitrogen, oxygen, nitrous oxide, carbon dioxide, carbon monoxide, hydrogen, and the like. The method has the main effects that impurities and foreign matters on the surface of a substrate are cleaned through high-energy ion bombardment, and meanwhile, the ions with higher energy break chemical bonds of organic molecules on the surface layer, so that gaseous small molecules are formed and volatilized to leave the surface, and a new active surface layer is exposed. The target cathode of the first metal layer vacuum sputtering module 14 is a planar target or a cylindrical target, the target cathode is distributed on one side of the first metal layer temperature control roller 9, and the number of the target cathodes can be properly adjusted according to the developed process conditions.
And a second metal layer vacuum evaporation module which is right opposite to the front surface of the carrier foil is arranged in the second metal layer vacuum evaporation bin 3, and the second metal layer vacuum evaporation module comprises metal sources 15 and ligand molecule sources 16 which are arranged in a staggered mode. And continuously evaporating a stripping layer on the surface of the metal barrier layer by a vacuum evaporation technology.
The metal sources 15 and the ligand molecule sources 16 are alternately arranged on one side of the second metal layer temperature control roller 10. The metal source 15 may be evaporated with Cu, ni, co, zr, zn, fe or alloys thereof, and the ligand molecule source 16 may be evaporated with terephthalic acid, 2-amino-terephthalic acid, trimesic acid, dimethylimidazole or mixtures thereof. By adopting a mode of combining sputtering and evaporation, the stripping force is stable, the film continuity is better, adhesion and pinholes are less generated, the higher product percent of pass and the production continuity can be maintained, and the productivity and the benefit are greatly improved.
And a third metal layer vacuum sputtering module 17 which is right opposite to the front surface of the carrier foil is arranged in the third metal layer vacuum sputtering bin 4. And sputtering a copper plating seed layer on the surface of the stripping layer through a third metal layer vacuum sputtering module 17.
The target cathode of the third metal layer vacuum sputtering module 17 is a planar target or a cylindrical target, the target cathode is distributed on one side of the third metal layer temperature control roller 11, and the number of the cathode targets can be properly adjusted according to the developed process conditions.
And auxiliary air exhaust assemblies 18 are arranged at the joints of the two adjacent bins in the unwinding bin 1, the first metal layer vacuum sputtering bin 2, the second metal layer vacuum evaporation bin 3, the third metal layer vacuum sputtering bin 4 and the winding bin 5. The vacuum chamber is characterized in that the residual atoms or molecules sputtered or evaporated are pumped away in time through the auxiliary pumping assembly 18 (an external pump) except for pumping by a mechanical pump, a molecular pump or a maintaining pump and other pump groups, so that pollution-free high-quality continuous coating among the chambers is realized. The number of the pumping holes of the auxiliary pumping assembly 18 can be appropriately adjusted according to actual conditions, and in this embodiment, the pumping holes are specifically set as follows: and an air exhaust port is respectively arranged between two adjacent chambers and on two sides of the carrier foil.
Adopt the utility model discloses the extra-thin copper foil of attached carrier of production has advantages such as technological control is stable, each functional layer is even in succession and carrier layer separating force is unanimous, and this method can satisfy mass continuous production's stability of quality moreover. In the vacuum coating working section, firstly, the surface of the carrier layer is treated by utilizing an ion source and the like, so that the surface is cleaned and uniform; and then plating a layer of dense and stable metals such as nickel, molybdenum and the like on the surface of the carrier layer by a magnetron sputtering technology to be used as a barrier layer. And then preparing a layer of metal complex serving as a carrier stripping layer on the surface of the barrier metal by using an evaporation technology. And then sputtering a layer of copper on the surface of the stripping layer to be used as a seed layer for subsequent electroplating. The method realizes the stable separation of the carrier layers in a mode of combining magnetron sputtering and evaporation, and simultaneously the process method of vacuum coating ensures the thickness uniformity, film continuity and quality stability of each functional layer, so the process method can easily realize the mass production and quality stability of products and has a significant promotion effect on the development of the ultra-fine circuit board.
After a roll of carrier foil is processed by vacuum sputtering and vacuum evaporation in the sputtering evaporation module, the carrier foil is manually taken out and transferred to a winding system of the electroplating thickening module 19 outside the vacuum chamber for electroplating thickening, so that the surface of the copper seed layer is electroplated and thickened with a thickened copper layer to a target thickness. And then performing surface treatment on the surface of the ultrathin carrier foil on the plated film by adopting a surface treatment technology similar to that of the electronic circuit foil. As shown in fig. 2, the electroplating thickening module 19 includes a winding system, and an alkali plating tank, a water washing tank i, an acid plating tank, a water washing tank ii, a roughening tank, a curing tank, a water washing tank, a blackening tank, a water washing tank iii, an ashing tank, a water washing tank iv, a passivation tank, a water washing tank v, a coupling agent coating tank and an oven which are sequentially arranged. According to the actual situation, the alkaline plating tank and the acid plating tank for the thickening of the alkaline-acid plating can be changed into single alkaline plating thickening only by adopting the alkaline plating tank or single acid plating thickening only by adopting the acid plating tank.
Winding system in the vacuum chamber is including locating the first metal level accuse temperature roller 9 in unreeling 1 interior unreeling roller 6, tension roller 7, the first metal level vacuum sputtering storehouse 2, the second metal level accuse temperature roller 10 in the second metal level vacuum evaporation storehouse 3, the third metal level accuse temperature roller 11 in the third metal level vacuum sputtering storehouse 4 and wind-up roll 12 in the rolling storehouse 5, be equipped with transition roller 8 between tension roller 7, first metal level accuse temperature roller 9, second metal level accuse temperature roller 10, the third metal level accuse temperature roller 11. The winding system in the sputtering evaporation module also comprises an unwinding roller, a tension roller, a transition roller and a winding roller. And a pressure sensor, a servo motor and a PLC (programmable logic controller) control cabinet for controlling the tension taper of the carrier foil roll are arranged in the tension roller 7.
The tension roller 7 is a main component of a tension system in the winding system, and is used for continuously reducing the winding diameter along with the unwinding and increasing the winding diameter in the transmission process, and maintaining the whole system in a constant tension state by controlling the tension taper, so that abnormal conditions such as winding and jumping, winding loosening or non-circular winding are avoided.
The work flow of the present invention is detailed below by specific embodiments:
example 1
Fixing a whole roll of copper foil with the width of 600mm and the thickness of 18 microns on an unwinding roller 6 in an unwinding bin 1, opening an auxiliary air extraction assembly 18, adjusting the copper foil through a tension roller 7 and a transition roller 8, and enabling the smooth surface of the copper foil to sequentially pass through an ion source processing module 13 and a first metal layer vacuum sputtering module 14 in a first metal layer vacuum sputtering bin 2; a second metal layer vacuum evaporation module in the second metal layer vacuum evaporation bin 3, wherein a metal source 15 and a ligand molecule source 16 are distributed; and a third metal layer vacuum sputtering module 17 in the third metal layer vacuum sputtering chamber 4. Wherein the ion source is an anode layer ion source, the set power is 4KW, and the processing time is 6min; the metal of the sputtering barrier layer is Ni, and the thickness of the barrier layer is 25nm; the stripping layer is evaporated to have a thickness of 20nm, the metal evaporation source is Co, and the micromolecule evaporation source is dimethyl imidazole; the thickness of the sputtered seed copper layer was 70nm. And after sputtering, the copper foil is fixed on a winding roller 12, and is packaged and stored for later use.
The whole roll of copper foil subjected to vacuum coating treatment is placed on an electroplating treatment line, electroplating thickening and surface treatment are carried out on the surface of a seed layer, the copper foil sequentially passes through an alkali plating bath, a rinsing bath, an acid plating bath, a rinsing bath, a roughing bath, a solidifying bath, a rinsing bath, a blackening bath, a rinsing bath, an ashing bath, a rinsing bath, a passivating bath, a rinsing bath, a silane coating bath and an oven, and then the copper foil is rolled and packaged after being subjected to tension adjustment. Wherein the alkali plating bath is copper pyrophosphate/potassium pyrophosphate electroplating solution, the acid plating bath is copper sulfate/sulfuric acid electroplating solution, the electroplating is thickened until the thickness of the metal layer is 3 μm, and the specific processes of other surface treatments are the same as the surface treatment process of the copper foil for the conventional electronic circuit.
Example 2
Fixing a whole roll of copper foil with the width of 600mm and the thickness of 18 mu m on an unwinding roller 6 in an unwinding bin 1, opening an auxiliary air exhaust assembly 18, adjusting the copper foil through a tension roller 7 and a transition roller 8, and enabling the smooth surface of the copper foil to sequentially pass through an ion source processing module 13 and a first metal layer vacuum sputtering module 14 in a first metal layer vacuum sputtering bin 2; a second metal layer vacuum evaporation module in the second metal layer vacuum evaporation bin 3, wherein a metal source 15 and a ligand molecule source 16 are distributed; and a third metal layer vacuum sputtering module 17 in the third metal layer vacuum sputtering chamber 4. Wherein the ion source is an anode layer ion source, the set power is 4KW, and the processing time is 6min; the metal of the sputtering barrier layer is Ni, and the thickness of the barrier layer is 25nm; the stripping layer is evaporated to have a thickness of 20nm, the metal evaporation source is Ni, and the micromolecule evaporation source is 2-amino-terephthalic acid; the thickness of the sputtered seed copper layer was 70nm. And after sputtering, the copper foil is fixed on a winding roller 12, and is packaged and stored for later use.
The whole roll of copper foil subjected to vacuum coating treatment is placed on an electroplating treatment line, electroplating thickening and surface treatment are carried out on the surface of a seed layer, the copper foil sequentially passes through an alkali plating bath, a rinsing bath, an acid plating bath, a rinsing bath, a roughing bath, a solidifying bath, a rinsing bath, a blackening bath, a rinsing bath, an ashing bath, a rinsing bath, a passivating bath, a rinsing bath, a silane coating bath and an oven, and then the copper foil is rolled and packaged after being subjected to tension adjustment. Wherein the alkali plating bath is copper pyrophosphate/potassium pyrophosphate electroplating solution, the acid plating bath is copper sulfate/sulfuric acid electroplating solution, the electroplating is thickened until the thickness of the metal layer is 3 μm, and the specific processes of other surface treatments are the same as the surface treatment process of the copper foil for the conventional electronic circuit.
Example 3
Fixing a whole roll of copper foil with the width of 600mm and the thickness of 18 microns on an unwinding roller 6 in an unwinding bin 1, opening an auxiliary air extraction assembly 18, adjusting the copper foil through a tension roller 7 and a transition roller 8, and enabling the smooth surface of the copper foil to sequentially pass through an ion source processing module 13 and a first metal layer vacuum sputtering module 14 in a first metal layer vacuum sputtering bin 2; a second metal layer vacuum evaporation module in the second metal layer vacuum evaporation bin 3, wherein a metal source 15 and a ligand molecule source 16 are distributed; and a third metal layer vacuum sputtering module 17 in the third metal layer vacuum sputtering chamber 4. Wherein the ion source is an anode layer ion source, the set power is 4KW, and the processing time is 6min; the metal of the sputtering barrier layer is Ni, and the thickness of the barrier layer is 25nm; the stripping layer is evaporated to have the thickness of 20nm, the metal evaporation source is Zr, and the micromolecule evaporation source is terephthalic acid; the thickness of the sputtered seed copper layer was 70nm. And after sputtering, the copper foil is fixed on a winding roller 12, and is packaged and stored for later use.
The whole roll of copper foil subjected to vacuum coating treatment is placed on an electroplating treatment line, electroplating thickening and surface treatment are carried out on the surface of a seed layer, the copper foil sequentially passes through an alkali plating tank, a rinsing tank, an acid plating tank, a rinsing tank, a roughing tank, a solidifying tank, a rinsing tank, a blackening tank, a rinsing tank, a ashing tank, a rinsing tank, a passivating tank, a rinsing tank, a silane coating tank and an oven, and then the copper foil is rolled and packaged after being subjected to tension adjustment. Wherein the alkali plating bath is copper pyrophosphate/potassium pyrophosphate electroplating solution, the acid plating bath is copper sulfate/sulfuric acid electroplating solution, the electroplating is thickened until the thickness of the metal layer is 3 μm, and the specific processes of other surface treatments are the same as the surface treatment process of the copper foil for the conventional electronic circuit.
The following copper foil surface condition after peeling by the comparative example was compared with the examples in terms of effects:
comparative example 1
The process of comparative example 1 is identical to that of example 1, and the only difference is that only Co is evaporated during the release layer evaporation, and there is no small molecule evaporation source.
Comparative example 2
The process of comparative example 2 is identical to that of example 1, except that only small-molecule dimethylimidazole is evaporated during the release layer evaporation, and no metal evaporation source is used.
Comparative example 3
The comparative example 3 is identical to the example 1 in process, and the only difference is the process without sputtering copper seed layer, direct electroplating thickening and surface treatment process.
Sample evaluation method
After the sample is rolled, 10 samples are randomly sampled within the length of 100 meters, and the samples and the prepreg are overlapped for high-temperature vacuum hot pressing. And (4) peeling the carrier piece by piece after the hot pressing is finished and the temperature is reduced, recording the problems in the peeling process and counting the defects such as pinholes seen by naked eyes.
Analysis of results
| No. | Stripping process | Surface condition of extra thin copper foil after peeling |
| Example 1 | Easy to peel off | The surface copper foil has uniform color and no glue seepage spots |
| Example 2 | Easy to peel off | The surface copper foil has uniform color and no glue seepage spots |
| Example 3 | Easy to peel off | The surface copper foil has uniform color and no glue seepage spots |
| Comparative example 1 | Difficult to peel off and local adhesion | Inconsistent surface color, local grey spots and pores due to adhesion |
| Comparative example 2 | Is very easy to peel off | The surface color is uniform, but the part is slightly adhered and the holes caused by adhesion |
| Comparative example 3 | Difficult to peel off and local adhesion | Uneven surface color, more glue-permeating spots and adhesive pores |
The experimental result shows that the stripping layer prepared by the method can realize better stripping of the carrier layer, and the ultrathin copper foil is dense and continuous and has no pinholes. In comparative example 1, small organic molecules were not deposited, and the release layer was metallic cobalt, which was hard to release because of its strong bonding force with the barrier metal nickel and the seed copper layer. In the comparative example 2, only small-molecule dimethylimidazole is evaporated, and a more stable complex is not formed, so that wrinkles, falling and cracking are easy to occur in the electroplating thickening and surface treatment processes, and local adhesion is caused due to instability and poor continuity of a film after a seed copper layer is sputtered. In comparative example 3, no seed copper layer was sputtered, and dimethylimidazolium cobalt as a peeling layer was easily broken in a solution during the thickening by electroplating, thereby causing non-uniform peeling force and partial adhesion, and the thickened copper layer by electroplating was not dense and had many pinholes.
To sum up: the method prepares a stable stripping layer by simultaneously evaporating metal and easily complexing micromolecules, and then prepares the seed copper layer by sputtering, thereby ensuring the stability of subsequent electroplating and the compactness of the copper layer and realizing the stable mass production of the carrier-attached ultrathin copper foil.
Claims (10)
1. A production device for carrier-attached ultrathin copper foil comprises a sputtering evaporation module and an external electroplating thickening module (19) which are arranged in a vacuum chamber, and a winding system for continuously transferring carrier foil is also arranged in the vacuum chamber, and is characterized in that the sputtering evaporation module comprises an unwinding chamber (1), a first metal layer vacuum evaporation chamber (2), a second metal layer vacuum evaporation chamber (3), a third metal layer vacuum evaporation chamber (4) and a winding chamber (5) which are sequentially arranged and communicated with each other, the winding system enables the carrier foil to be unwound from the unwinding chamber (1), sequentially pass through the first metal layer vacuum evaporation chamber (2), the second metal layer vacuum evaporation chamber (3) and the third metal layer vacuum evaporation chamber (4), and finally enter the winding chamber (5) to complete winding,
an ion source processing module (13) and a first metal layer vacuum sputtering module (14) which are opposite to the front surface of the carrier foil are arranged in the first metal layer vacuum sputtering bin (2);
a second metal layer vacuum evaporation module which is right opposite to the front surface of the carrier foil is arranged in the second metal layer vacuum evaporation bin (3), and the second metal layer vacuum evaporation module comprises metal sources (15) and ligand molecule sources (16) which are arranged in a staggered mode; and a third metal layer vacuum sputtering module (17) which is right opposite to the front surface of the carrier foil is arranged in the third metal layer vacuum sputtering bin (4).
2. The production device of the ultra-thin copper foil with the carrier as claimed in claim 1, wherein the electroplating thickening module (19) comprises a winding system, and an alkali plating tank, a water washing tank I, an acid plating tank, a water washing tank II, a roughening tank, a curing tank, a water washing tank, a blackening tank, a water washing tank III, an ashing tank, a water washing tank IV, a passivation tank, a water washing tank V, a coupling agent coating tank and an oven which are sequentially arranged.
3. The production device of the ultra-thin copper foil with the carrier as claimed in claim 1, wherein an auxiliary air exhaust assembly (18) is arranged at the joint of two adjacent bins in the unwinding bin (1), the first metal layer vacuum sputtering bin (2), the second metal layer vacuum evaporation bin (3), the third metal layer vacuum sputtering bin (4) and the winding bin (5).
4. The production device of the ultra-thin copper foil with the carrier, according to claim 1, wherein the winding system comprises an unwinding roller (6) arranged in an unwinding bin (1), a tension roller (7), a first metal layer temperature control roller (9) arranged in a first metal layer vacuum sputtering bin (2), a second metal layer temperature control roller (10) arranged in a second metal layer vacuum evaporation bin (3), a third metal layer temperature control roller (11) arranged in a third metal layer vacuum sputtering bin (4), and a winding roller (12) arranged in a winding bin (5), wherein a transition roller (8) is arranged among the tension roller (7), the first metal layer temperature control roller (9), the second metal layer temperature control roller (10), and the third metal layer temperature control roller (11).
5. The production device of the carrier-attached ultra-thin copper foil as claimed in claim 4, wherein a pressure sensor, a servo motor and a PLC control cabinet for controlling the tension taper of the carrier foil roll are arranged in the tension roller (7).
6. The production device of the carrier-attached ultra-thin copper foil as claimed in claim 4, wherein the target cathode of the first metal layer vacuum sputtering module (14) is a planar target or a cylindrical target, and the target cathode is distributed on one side of the first metal layer temperature control roller (9).
7. The apparatus for producing an ultra-thin copper foil with carrier as claimed in claim 1, wherein the ion source in the ion source processing module (13) is disposed at the inlet of the first metal layer vacuum sputtering chamber (2).
8. The apparatus for producing an ultra-thin copper foil with carrier according to claim 4, wherein the metal source (15) and the ligand molecule source (16) are alternately arranged on one side of the second metal layer temperature control roller (10).
9. The production device of the carrier-attached ultra-thin copper foil according to claim 4, wherein the target cathode of the third metal layer vacuum sputtering module (17) is a planar target or a cylindrical target, and the target cathode is distributed on one side of the third metal layer temperature control roller (11).
10. The apparatus for producing a carrier-attached ultra-thin copper foil as claimed in claim 1, wherein said metal source (15) is capable of evaporating Cu, ni, co, zr, zn, fe or an alloy thereof, and said ligand molecule source (16) is capable of evaporating terephthalic acid, 2-amino-terephthalic acid, trimesic acid, dimethylimidazole or a mixture thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222007018.7U CN218115584U (en) | 2022-08-01 | 2022-08-01 | Production device for extra-thin copper foil with carrier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222007018.7U CN218115584U (en) | 2022-08-01 | 2022-08-01 | Production device for extra-thin copper foil with carrier |
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| Publication Number | Publication Date |
|---|---|
| CN218115584U true CN218115584U (en) | 2022-12-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202222007018.7U Active CN218115584U (en) | 2022-08-01 | 2022-08-01 | Production device for extra-thin copper foil with carrier |
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| Country | Link |
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| CN (1) | CN218115584U (en) |
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