CN218102031U - Vertical cavity surface emitting laser - Google Patents
Vertical cavity surface emitting laser Download PDFInfo
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- CN218102031U CN218102031U CN202221138577.5U CN202221138577U CN218102031U CN 218102031 U CN218102031 U CN 218102031U CN 202221138577 U CN202221138577 U CN 202221138577U CN 218102031 U CN218102031 U CN 218102031U
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Abstract
A vertical-cavity surface-emitting laser, comprising: a substrate; a first mirror structure located on the substrate; an active layer on the first mirror structure; a second mirror structure on the active layer for at least two layers; a first passivation layer on top of the second mirror structure and the first mirror structure; a second passivation layer on the first passivation layer; a first electrode layer positioned in the first passivation layer and the second passivation layer, the first electrode layer electrically connected to the second mirror structure; a second electrode layer located within the first passivation layer, the second electrode layer electrically connected to the first mirror structure; the lower electrode plate is positioned between the first passivation layer and the second passivation layer and is electrically connected with the second electrode layer; and the upper electrode plate is positioned on the second passivation layer and is electrically connected with the first electrode layer. A capacitor is formed by the upper plate, the lower plate and the second passivation layer. The charges stored in the capacitor can also discharge the active layer after power-off, and the function of delayed light emission is achieved.
Description
Technical Field
The utility model relates to a semiconductor laser field especially relates to a vertical cavity surface emitting laser.
Background
A Vertical-Cavity Surface-Emitting Laser (VCSEL) is a semiconductor Laser Emitting Laser perpendicular to a substrate Surface, and currently, many Vertical-Cavity Surface-Emitting lasers using a gallium arsenide semiconductor as a base material have an emission wavelength mainly in a near-infrared band.
The structure of the vertical cavity surface emitting laser generally consists of three parts, namely an upper Bragg reflector (DBR), a lower Bragg reflector (DBR) and a middle active region, wherein the DBR is generally formed by alternately growing two materials with different refractive indexes and the thickness of one fourth of the wavelength of light, in order to reduce optical loss, the reflectivity of the N-type Bragg reflector is close to 100 percent and can be used as a total reflector of a resonant cavity, and the reflectivity of the P-type Bragg reflector is relatively lower and can be used as an emergent mirror of the resonant cavity. Wherein one or more layers of AlGaAs of high aluminum composition are provided as oxidation limiting layers in the P-type Bragg reflector.
However, the conventional vertical cavity surface emitting laser still has many problems.
SUMMERY OF THE UTILITY MODEL
The utility model provides a technical problem provide a vertical cavity surface emitting laser to realize the luminous function of time delay.
In order to solve the above problems, the present invention provides a vertical cavity surface emitting laser, including: a substrate; a first mirror structure on the substrate; an active layer on the first mirror structure; at least two overlapping second mirror structures on the active layer, the second mirror structures having a conductivity type opposite to the conductivity type of the first mirror structures; the light-emitting layer is positioned between two adjacent second mirror structures, and the light-blocking layer is positioned around the light-emitting layer; the grooves are positioned in the first reflector structure, the active region and the second reflector structure, and the side wall surfaces of the light blocking layer are exposed by the grooves; a first passivation layer on a top surface, a sidewall surface and a bottom surface of the second mirror structure; a second passivation layer on the first passivation layer; a first electrode layer within the first passivation layer and the second passivation layer, the first electrode layer electrically connected with the second mirror structure; a second electrode layer within the first passivation layer, the second electrode layer electrically connected to the first mirror structure; the lower electrode plate is positioned between the first passivation layer and the second passivation layer, is electrically connected with the second electrode layer, and has a first projection pattern on the substrate; and the upper electrode plate is positioned on the second passivation layer and is electrically connected with the first electrode layer, the upper electrode plate is provided with a second projection pattern on the substrate, and the first projection pattern and the second projection pattern are provided with an overlapping region.
Optionally, the first mirror structure is an N-type bragg mirror, and the second mirror structure is a P-type bragg mirror.
Optionally, the material of the first mirror structure is doped with silicon ions; the material of the second mirror structure is doped with carbon ions.
Optionally, the second mirror structure includes a plurality of second stacked structures, each of the second stacked structures includes a first reflective layer and a second reflective layer on the first reflective layer, and the first reflective layer and the second reflective layer have different refractive indexes.
Optionally, the material of the first reflective layer includes aluminum gallium arsenide, and the material of the second reflective layer includes gallium arsenide.
Optionally, an atomic percentage concentration of an aluminum element in a material of the light emitting layer is greater than an atomic percentage concentration of an aluminum element in a material of the first reflective layer.
Optionally, the atomic percentage concentration of the aluminum element in the material of the light emitting layer is greater than or equal to 98%.
Optionally, the material of the light blocking layer includes aluminum oxide or silicon-doped aluminum gallium arsenide, and the material of the light emitting layer includes aluminum gallium arsenide.
Optionally, the method further includes: the reflecting material layer is positioned on the light blocking layer and the light emitting layer, and the material of the reflecting material layer is the same as that of the second reflecting layer; the reflecting material layer is positioned between two adjacent second mirror structures.
Optionally, the stacking times of the second stacking structure are 20 to 30 times.
Optionally, the first mirror structure includes a plurality of first stacked structures, each of the first stacked structures includes a third reflective layer and a fourth reflective layer on the third reflective layer, and refractive indices of the third reflective layer and the fourth reflective layer are different.
Optionally, the material of the third reflective layer includes aluminum gallium arsenide, and the material of the fourth reflective layer includes gallium arsenide.
Optionally, the stacking times of the first stacking structure are 20 to 30 times.
Optionally, the material of the substrate includes gallium arsenide.
Optionally, the active layer includes a plurality of first barrier layers and second barrier layers stacked in a staggered manner in a direction perpendicular to the substrate surface, and a well layer located between the adjacent first barrier layers and the second barrier layers.
Optionally, the material of the first barrier layer includes P-type gallium arsenide, and the P-type gallium arsenide is doped with carbon ions; the material of the second barrier layer comprises N-type gallium arsenide, and silicon ions are doped in the N-type gallium arsenide; the material of the well layer comprises gallium indium arsenide.
Compared with the prior art, the technical scheme of the utility model have following advantage:
the utility model discloses in technical scheme's vertical cavity surface emitting laser, include: the lower electrode plate is positioned between the first passivation layer and the second passivation layer, is electrically connected with the second electrode layer, and has a first projection pattern on the substrate; and the upper electrode plate is positioned on the second passivation layer and is electrically connected with the first electrode layer, the upper electrode plate is provided with a second projection pattern on the substrate, and the first projection pattern and the second projection pattern are provided with an overlapping region. And forming a capacitor by the upper polar plate, the lower polar plate and the second passivation layer positioned between the upper polar plate and the lower polar plate. Charging the capacitor simultaneously while the first electrode layer and the second electrode layer are energized; when the voltage on the first electrode layer and the second electrode layer is removed, the charges stored in the capacitor can also discharge to the active layer, so that the vertical cavity surface emitting laser can also continuously emit light for a period of time, and a function of delaying light emission is achieved.
Drawings
FIG. 1 is a schematic diagram of a VCSEL structure;
fig. 2 and fig. 3 are schematic structural diagrams of vertical cavity surface emitting lasers according to embodiments of the present invention.
Detailed Description
As described in the background, there are still problems with existing vertical cavity surface emitting lasers. The following detailed description will be made in conjunction with the accompanying drawings.
Fig. 1 is a schematic structural view of a vertical cavity surface emitting laser.
Referring to fig. 1, a vertical cavity surface emitting laser includes: a substrate 100; a first mirror structure on the substrate 100, the first mirror structure comprising a number of first stacked structures including a first reflective layer 101 and a second reflective layer 102 on the first reflective layer 101; an active region 103 on the first mirror structure; a second mirror structure on the active region 103, the second mirror structure having a conductivity type opposite to that of the first mirror structure, the second mirror structure including a plurality of second stacked structures including a third reflective layer 104 and a fourth reflective layer 105 on the third reflective layer 104; a light-emitting layer 109 on the second mirror structure and a light-blocking layer 108 around the light-emitting layer 109; a third mirror structure on the light emitting layer 109 and the light blocking layer 108, the second mirror structure having a same conductivity type as the third mirror structure, the third mirror structure including a plurality of third stacked structures, the third stacked structures including a fifth reflective layer 106 and a sixth reflective layer 107 on the fifth reflective layer 106; grooves (not labeled) in the third mirror structure, the active region 103, the second mirror structure, and the first mirror structure, the grooves exposing the sidewall surfaces of the light blocking layer 108; a first passivation layer 110 on the top surface, the groove sidewall surface and the bottom surface of the third mirror structure; a second passivation layer 111 on the first passivation layer 110; a first electrode layer 112 within the second passivation layer 111 and the first passivation layer 110 on the third mirror structure; a second electrode layer 113 within the first passivation layer 110 on the first mirror structure.
In this embodiment, the first electrode layer and the second electrode layer need to be continuously energized to excite the active layer to emit light, and there is no delayed light emission function.
On this basis, the utility model provides a vertical cavity surface emitting laser, through the top plate the bottom plate and be located the top plate with between the bottom plate the second passivation layer forms the condenser. Charging the capacitor simultaneously while the first electrode layer and the second electrode layer are energized; when the voltage on the first electrode layer and the second electrode layer is removed, the charges stored in the capacitor can also discharge to the active layer, so that the vertical cavity surface emitting laser can also continuously emit light for a period of time, and a function of delaying light emission is achieved.
In order to make the aforementioned objects, features and advantages of the present invention more comprehensible, embodiments accompanied with figures are described in detail below.
Fig. 2 and fig. 3 are schematic structural diagrams of vertical cavity surface emitting lasers according to embodiments of the present invention.
Referring to fig. 2 and 3, fig. 3 isbase:Sub>A schematic cross-sectional view taken along linebase:Sub>A-base:Sub>A of fig. 2,base:Sub>A vertical cavity surface emitting laser, comprising: a substrate 200; a first mirror structure on the substrate 200; an active layer 203 on the first mirror structure; at least two overlapping second mirror structures on the active layer 203, the second mirror structures having a conductivity type opposite to that of the first mirror structures; a light-emitting layer 206 between two adjacent second mirror structures, and a light-blocking layer 207 around the light-emitting layer 206; grooves (not labeled) in the first mirror structure, the active region, and the second mirror structure, the grooves exposing the sidewall surface of the light blocking layer 207; a first passivation layer 208 on the top surface of the second mirror structure, the groove sidewall surface, and the bottom surface; a second passivation layer 209 on the first passivation layer 208; a first electrode layer 210 located within the first and second passivation layers 208, 209, the first electrode layer 210 being electrically connected to the second mirror structure; a second electrode layer 211 within the first passivation layer 208, the second electrode layer 211 being electrically connected to the first mirror structure; a lower plate 212 positioned between the first passivation layer 208 and the second passivation layer 209, the lower plate 212 being electrically connected to the second electrode layer 211, the lower plate 212 having a first projected pattern S1 on the substrate 200; and an upper electrode plate 213 disposed on the second passivation layer 209, wherein the upper electrode plate 213 is electrically connected to the first electrode layer 210, the upper electrode plate 213 has a second projected pattern S2 on the substrate 200, and the first projected pattern S1 and the second projected pattern S2 have an overlapping region.
In the present embodiment, a capacitor is formed by the upper plate 213, the lower plate 212, and the second passivation layer 209 between the upper plate 213 and the lower plate 212. Charging the capacitor simultaneously while the first electrode layer 210 and the second electrode layer 211 are energized; when the voltage on the first electrode layer 210 and the second electrode layer 211 is removed, the charges stored in the capacitor can also discharge to the active layer 203, so that the vertical cavity surface emitting laser can also continue to emit light for a period of time, and a function of delaying light emission is achieved.
The material of the substrate 200 comprises a semiconductor material, and in this embodiment, the material of the substrate 200 comprises gallium arsenide.
In this embodiment, the method further includes: a buffer layer (not shown) on the substrate 200, the buffer layer having a conductivity type of N-type, the buffer layer being made of a material including gallium arsenide doped with silicon ions.
In this embodiment, the first mirror structure is an N-type bragg mirror. The material of the first mirror structure is doped with silicon ions.
The first mirror structure includes a plurality of first stacked structures including a third reflective layer 201 and a fourth reflective layer 202 on the third reflective layer 201, and refractive indices of the third reflective layer 201 and the fourth reflective layer 202 are different.
The refractive indexes of the third reflective layer 201 and the fourth reflective layer 202 are different, so that the first mirror structure formed by stacking the third reflective layer 201 and the fourth reflective layer 202 for multiple times can have high reflectivity. Wherein, when the refractive indexes of the third reflective layer 201 and the fourth reflective layer 202 are different greatly, the stacking times of the first stacking structure are less.
In this embodiment, the stacking times of the first stacking structure are 20 to 30 times.
In the present embodiment, the material of the third reflective layer 201 includes aluminum gallium arsenide (Al) x Ga 1-x As), the material of the fourth reflective layer 202 includes gallium arsenide.
In this embodiment, the thickness of the third reflective layer 201 and the thickness of the fourth reflective layer 202 are one-fourth of the emission wavelength of the vcsel.
In this embodiment, the active layer 203 includes a plurality of first barrier layers (not shown), second barrier layers (not shown) and well layers (not shown) between the first barrier layers and the second barrier layers, wherein the first barrier layers and the second barrier layers are alternately stacked in a direction perpendicular to the substrate surface 200.
The material of the first barrier layer comprises P-type gallium arsenide, and carbon ions are doped in the P-type gallium arsenide; the material of the second barrier layer comprises N-type gallium arsenide, and silicon ions are doped in the N-type gallium arsenide; the material of the well layer comprises gallium indium arsenide (In) 0.2 Ga 0.8 As)。
The first barrier layer, the second barrier layer and the well layer between the first barrier layer and the second barrier layer form a strain quantum well.
In this embodiment, the number of the strained quantum wells is 3, and in other embodiments, the number of the strained quantum wells is 5 or 7.
In the present embodiment, the thickness of the active layer 203 is the vcsel emission wavelength.
In this embodiment, the at least two overlapping second mirror structures comprise a first layer of second mirror structures on the active layer and a second layer of second mirror structures on the second layer of second mirror structures.
In this embodiment, the second mirror structure has a conductivity type opposite to that of the first mirror structure.
In this embodiment, the second mirror structure is a P-type bragg mirror. The material of the second mirror structure is doped with carbon ions.
In this embodiment, the second mirror structure includes several second stacked structures, each of the second stacked structures includes a first reflective layer 204 and a second reflective layer 205 on the first reflective layer 204, and the first reflective layer 204 and the second reflective layer 205 have different refractive indexes.
The refractive indexes of the first reflective layer 204 and the second reflective layer 205 are different, so that the second mirror structure formed by laminating the first reflective layer 204 and the second reflective layer 205 for a plurality of times can have high reflectivity. Wherein, when the refractive indexes of the first reflective layer 204 and the second reflective layer 205 are different greatly, the stacking times of the second stack structure are less.
In the present embodiment, the material of the first reflective layer 204 includes aluminum gallium arsenide (Al) x Ga 1-x As), the material of the second reflective layer 205 includes gallium arsenide.
In this embodiment, the stacking times of the second stacking structure are 20 to 30 times.
In this embodiment, the thickness of the first reflective layer 204 and the thickness of the second reflective layer 205 are one-fourth of the emission wavelength of the vcsel.
In the present embodiment, the material of the light blocking layer 207 includes aluminum oxide, and the material of the light emitting layer 206 includes aluminum gallium arsenide.
In other embodiments, the material of the light blocking layer comprises silicon-doped aluminum gallium arsenide, and the material of the light emitting layer comprises aluminum gallium arsenide.
In this embodiment, the atomic percent concentration of the aluminum element in the material of the light emitting layer 206 is greater than the atomic percent concentration of the aluminum element in the material of the first reflective layer 204.
In the present embodiment, the atomic percent concentration of the aluminum element in the material of the light emitting layer 206 is greater than or equal to 98%.
In this embodiment, the method further includes: a reflective material layer 214 on the light blocking layer 207 and the light emitting layer 206, the material of the reflective material layer 214 being the same as the material of the second reflective layer 205; the layer of reflective material 214 is located between two adjacent layers of the second mirror structure.
In the present embodiment, the material of the first passivation layer 208 includes silicon nitride.
In this embodiment, the material of the second passivation layer 209 includes silicon nitride.
In this embodiment, the material of the first electrode layer 210 includes a metal or a metal nitride; the metal includes: a combination of one or more of copper, aluminum, tungsten, cobalt, nickel, and tantalum; the metal nitride includes a combination of one or more of tantalum nitride and titanium nitride.
In this embodiment, the material of the second electrode layer 211 includes a metal or a metal nitride; the metal includes: combinations of one or more of copper, aluminum, tungsten, cobalt, nickel, and tantalum; the metal nitride includes a combination of one or more of tantalum nitride and titanium nitride.
In this embodiment, the material of the upper plate 213 includes metal or metal nitride; the metal includes: combinations of one or more of copper, aluminum, tungsten, cobalt, nickel, and tantalum; the metal nitride includes a combination of one or more of tantalum nitride and titanium nitride.
In this embodiment, the material of the lower plate 212 includes metal or metal nitride; the metal includes: combinations of one or more of copper, aluminum, tungsten, cobalt, nickel, and tantalum; the metal nitride includes a combination of one or more of tantalum nitride and titanium nitride.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one of ordinary skill in the pertinent art without departing from the scope or spirit of the present invention, and the scope of the present invention is defined by the appended claims.
Claims (16)
1. A vertical cavity surface emitting laser, comprising:
a substrate;
a first mirror structure on the substrate;
an active layer on the first mirror structure;
at least two overlapping second mirror structures on the active layer, the second mirror structures having a conductivity type opposite to the conductivity type of the first mirror structures;
the light-emitting layer is positioned between two adjacent layers of the second reflector structures, and the light-blocking layer is positioned around the light-emitting layer;
the grooves are positioned in the first reflector structure, the active region and the second reflector structure, and the side wall surfaces of the light blocking layer are exposed by the grooves;
a first passivation layer on a top surface, a sidewall surface and a bottom surface of the second mirror structure;
a second passivation layer on the first passivation layer;
a first electrode layer within the first passivation layer and the second passivation layer, the first electrode layer electrically connected with the second mirror structure;
a second electrode layer within the first passivation layer, the second electrode layer electrically connected to the first mirror structure;
the lower electrode plate is positioned between the first passivation layer and the second passivation layer, is electrically connected with the second electrode layer, and has a first projection pattern on the substrate;
and the upper electrode plate is positioned on the second passivation layer and is electrically connected with the first electrode layer, the upper electrode plate is provided with a second projection pattern on the substrate, and the first projection pattern and the second projection pattern are provided with an overlapping region.
2. A vertical cavity surface emitting laser according to claim 1, wherein said first mirror structure is an N-type bragg mirror and said second mirror structure is a P-type bragg mirror.
3. A vertical cavity surface emitting laser according to claim 2, wherein said first mirror structure is a material doped with silicon ions; the material of the second mirror structure is doped with carbon ions.
4. A vertical cavity surface emitting laser according to claim 2, wherein said second mirror structure includes a plurality of second stacked structures including a first reflective layer and a second reflective layer on said first reflective layer, said first reflective layer and said second reflective layer having different refractive indices.
5. A vertical cavity surface emitting laser according to claim 4, wherein the material of said first reflective layer comprises aluminum gallium arsenide and the material of said second reflective layer comprises gallium arsenide.
6. A vertical cavity surface emitting laser according to claim 5, wherein the atomic percent concentration of aluminum element in the material of said light emitting layer is larger than the atomic percent concentration of aluminum element in the material of said first reflecting layer.
7. A vertical cavity surface emitting laser according to claim 6, wherein said aluminum element is present in said light emitting layer material at an atomic percent concentration of 98% or more.
8. A vertical cavity surface emitting laser according to claim 6, wherein said light blocking layer material includes aluminum oxide or silicon-doped aluminum gallium arsenide, and said light emitting layer material includes aluminum gallium arsenide.
9. A vertical cavity surface emitting laser according to claim 4, further comprising: the reflecting material layer is positioned on the light blocking layer and the light emitting layer, and the material of the reflecting material layer is the same as that of the second reflecting layer; the reflecting material layer is positioned between two adjacent second mirror structures.
10. A vertical cavity surface emitting laser according to claim 4, wherein said second stacked structure is stacked 20 to 30 times.
11. A vertical cavity surface emitting laser according to claim 2, wherein said first mirror structure includes a plurality of first stacked structures including a third reflective layer and a fourth reflective layer on said third reflective layer, refractive indices of said third reflective layer and said fourth reflective layer being different.
12. A vertical cavity surface emitting laser according to claim 11, wherein the material of said third reflective layer comprises aluminum gallium arsenide and the material of said fourth reflective layer comprises gallium arsenide.
13. A vertical cavity surface emitting laser according to claim 11, wherein said first stacked structure is stacked 20 to 30 times.
14. A vertical cavity surface emitting laser according to claim 1, wherein said substrate material comprises gallium arsenide.
15. A vertical cavity surface emitting laser according to claim 1, wherein said active layer includes a plurality of first barrier layers, second barrier layers and well layers between adjacent ones of said first barrier layers and said second barrier layers, which are alternately stacked in a direction perpendicular to the surface of said substrate.
16. A vertical cavity surface emitting laser according to claim 15, wherein the material of said first barrier layer comprises P-type gallium arsenide doped with carbon ions; the material of the second barrier layer comprises N-type gallium arsenide, and silicon ions are doped in the N-type gallium arsenide; the material of the well layer comprises gallium indium arsenide.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202221138577.5U CN218102031U (en) | 2022-05-12 | 2022-05-12 | Vertical cavity surface emitting laser |
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| CN202221138577.5U CN218102031U (en) | 2022-05-12 | 2022-05-12 | Vertical cavity surface emitting laser |
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