CN217983305U - Temporary substrate for semiconductor temporary bonding process - Google Patents
Temporary substrate for semiconductor temporary bonding process Download PDFInfo
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- CN217983305U CN217983305U CN202222013675.2U CN202222013675U CN217983305U CN 217983305 U CN217983305 U CN 217983305U CN 202222013675 U CN202222013675 U CN 202222013675U CN 217983305 U CN217983305 U CN 217983305U
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Abstract
The utility model discloses a temporary substrate for semiconductor temporary bonding process, temporary substrate includes substrate, epitaxial layer and temporary bonding glue film, epitaxial layer extension growth in on the substrate, the substrate with the connection face of epitaxial layer is separated the bonding face for laser, temporary bonding glue film is located on the epitaxial layer. The utility model discloses a growth epitaxial layer on the substrate sets up interim bonding glue film and forms interim base plate on the epitaxial layer, and interim base plate and rather than the support plate of interim bonding need remove interim bonding fashionably, can use laser to act on laser and separate the bonding face with substrate and interim bonding glue film, remove the substrate after, interim bonding glue film can be torn from the support plate easily, does benefit to actual operation very much.
Description
Technical Field
The utility model belongs to the technical field of the semiconductor, especially, relate to a temporary substrate for interim bonding processing procedure of semiconductor.
Background
In the prior art, in the process of processing and transferring a semiconductor wafer, the semiconductor wafer is usually first connected to a temporary substrate through a debondable adhesive layer, and after the semiconductor wafer is processed, the debonding is performed to remove the temporary substrate. In the process, the debondable glue layer is generally liquid glue with a laser peeling function or a glue film made of glue with a laser peeling function, but since the temporary substrate is of a whole-plate structure and has relatively high hardness, even if the viscosity of the glue is greatly weakened after laser irradiation, the temporary substrate is not easy to peel off.
Disclosure of Invention
An object of the utility model is to provide a temporary substrate for the interim bonding process of semiconductor to the difficult problem of peeling off of temporary substrate among the solution prior art.
In order to realize the above object, the utility model provides a temporary substrate for semiconductor temporary bonding process, temporary substrate includes substrate, epitaxial layer and temporary bonding glue film, epitaxial layer extension is grown in on the substrate, the substrate with the connection face of epitaxial layer is the laser and separates the bonding face, the temporary bonding glue film is located on the epitaxial layer.
Preferably, the epitaxial layer comprises an undoped gallium nitride layer or an undoped aluminum nitride layer.
Preferably, the thickness of the epitaxial layer is 0.1 to 2.5 micrometers.
Preferably the temporary bonding glue layer comprises a first glue layer adhered to the epitaxial layer, a substrate arranged on the first glue layer, a second glue layer arranged on the substrate and a protective film layer covered on the second glue layer.
Preferably, the temporary bonding adhesive layer is a double-sided UV viscosity-reducing film layer, the first adhesive layer is a UV viscosity-reducing adhesive layer or a pressure-sensitive adhesive layer, the second adhesive layer is a UV viscosity-reducing adhesive layer, and the protective film layer is a release film layer.
Preferably, the size of the temporary bonding glue layer is the same as that of the substrate or the size of the temporary bonding glue layer exceeds the edge of the substrate by 1-2 mm.
Preferably, the substrate comprises a sapphire substrate, a silicon carbide substrate or a glass substrate.
Preferably, the epitaxial layer is formed by a metal organic chemical vapor deposition or hydride vapor phase epitaxy process.
Preferably, the temporary substrate is arranged in the protective bag.
Preferably, the protection bag is an aluminum foil bag.
Compared with the prior art, the utility model discloses a growth epitaxial layer sets up interim bonding glue film formation interim base plate on the epitaxial layer on the substrate, interim base plate and rather than the support plate of interim bonding need remove interim bonding when, can use laser action to separate the bonding face with substrate and interim bonding glue film in laser, remove the substrate after, interim bonding glue film can be torn from the support plate easily, does benefit to actual operation very much.
Drawings
Fig. 1 is a structural diagram of a substrate of a temporary substrate for a temporary bonding process of a semiconductor according to an embodiment of the present invention.
Fig. 2 is a structural diagram of a substrate and an epitaxial layer of a temporary substrate for a temporary bonding process of a semiconductor according to an embodiment of the present invention.
Fig. 3 is a structural diagram of a temporary substrate for a temporary bonding process of a semiconductor according to an embodiment of the present invention.
Fig. 4 is a structural diagram of a double-sided UV adhesive reducing film of a temporary substrate for a temporary bonding process of a semiconductor according to an embodiment of the present invention.
Detailed Description
In order to explain technical contents, structural features, and effects achieved by the present invention in detail, the following description is given in conjunction with the embodiments and the accompanying drawings.
As shown in fig. 1 to fig. 3, the utility model provides a temporary substrate 10 for the temporary bonding process of semiconductor, temporary substrate 10 includes substrate 1, epitaxial layer and temporary bonding glue film, epitaxial layer epitaxy grows on the substrate, the substrate 1 with the connection face of epitaxial layer 2 is the bonding face 12 of laser debonding; the temporary bonding glue layer 3 is arranged on the epitaxial layer 2.
The utility model discloses a set up epitaxial layer 2 on substrate 1 to set up interim bonding glue film 3 formation temporary substrate 10 on epitaxial layer 2. When the temporary substrate 10 is used for bonding with a carrier plate to be bonded, the carrier plate is only required to be pasted above the temporary bonding adhesive layer 3, and the carrier plate is, for example, a wafer; when the temporary substrate 10 and the carrier need to be released from the temporary bonding, the laser can be used to act on the laser de-bonding surface 12 to separate the substrate 1 from the temporary bonding adhesive layer 3, and after the substrate is removed, the temporary bonding adhesive layer can be easily torn off from the carrier, which is very beneficial to practical operation.
In the embodiment of the utility model, substrate 1 includes sapphire substrate, silicon substrate, carborundum substrate or glass substrate, certainly also can be other substrates 1, specifically can select according to actual need.
In the embodiment of the present invention, as shown in fig. 2, the epitaxial layer 2 is an undoped gallium nitride layer or an undoped aluminum nitride layer, or an epitaxial structure including an undoped gallium nitride layer or an undoped aluminum nitride layer. For example, laser de-bonding may be performed with 355nm, 266nm, 248nm laser equipment for an undoped gallium nitride layer epitaxially grown on substrate 1. Of course, the epitaxial layer 2 may be another epitaxial layer 2 as long as the absorption rate of the laser light is different between the substrate 1 and the epitaxial layer 2.
In the embodiment of the present invention, the thickness of the epitaxial layer 2 is 0.1 to 2.5 microns. The utility model discloses preferred thinner epitaxial layer 2, for example thinner gallium nitride layer, thinner gallium nitride layer can form metal gallium and nitrogen gas after laser irradiation, and nitrogen gas can overflow, only on the interim bonding glue film 3 of metal gallium adhesion, and metal gallium is not whole face structure, but is the hole form, and hardness is little, consequently the 3 visbreaking backs of interim bonding glue film, can directly tear from the support plate very easily, and technology is very simple.
In the embodiment of the present invention, the temporary bonding adhesive layer 3 includes paste in the first adhesive layer 31, locate on the epitaxial layer 2 the substrate 32 on the first adhesive layer 31, locate the second adhesive layer 33 on the substrate 32 and cover in the protection film layer 34 on the second adhesive layer 33. When the temporary substrate 10 is used for bonding with a carrier requiring bonding, only the protective film layer 34 needs to be torn off, and the carrier is attached to the second adhesive layer 33.
Specifically, refer to fig. 3 and fig. 4 and show, interim bonding glue film 3 is two-sided UV visbreaking film layer, first glue film 31 is first UV visbreaking glue film 42 or pressure sensitive adhesive layer, second glue film 33 is second UV visbreaking glue film 44, protection rete 34 is the second from type rete 45, two-sided UV visbreaking film is comparatively ripe product in the market, can take the mode of purchasing outward to purchase, and the UV visbreaking film that possesses different specification thickness, different models in the market can be selected as required. Certainly, a mature product on the market is not selected, but the temporary bonding glue layer is configured by self, and specifically, the temporary bonding glue layer can be selected according to actual needs.
The embodiment of the utility model provides an in, the size of interim bonding glue film 3 with the same size of substrate 1 or the size of interim bonding glue film 3 surpasss 1 border 1 ~ 2 millimeters of substrate, and this setting makes interim bonding glue film 3 cover completely substrate 1, the size of substrate 1 is equivalent with the carrier plate size under general condition, separates the bonding and removes substrate 1 back at laser, can follow the interim bonding glue film 3 that surpasss 1 edges of substrate and tear the membrane, improves the simple operation nature of tearing the membrane.
In the embodiment of the present invention, the epitaxial layer 2 is formed by a metal organic compound chemical vapor deposition or hydride vapor phase epitaxy process.
The embodiment of the utility model provides a still include the protection bag, interim base plate 10 is located in the protection bag, the protection bag is the aluminium foil bag. The temporary substrate 10 after being manufactured is stored in the protective bag, and the temporary substrate 10 can be protected during the process of transferring and storing the temporary substrate 10.
The utility model discloses temporary substrate 10's manufacturing process does: epitaxially growing a layer of undoped gallium nitride or undoped aluminum nitride of 0.1-2.5 um on the substrate 1 by MOCVD (metal organic chemical vapor deposition) or HVPE (hydride vapor phase epitaxy) process; as shown in fig. 4, selecting a suitable double-sided UV anti-adhesive film 4, where the structure of the double-sided UV anti-adhesive film 4 includes a first release film 41, a first UV anti-adhesive layer 42, a middle substrate 43, a second UV anti-adhesive layer 44, and a second release film 45, which are sequentially arranged, cutting the double-sided UV anti-adhesive film 4 with a cutting machine, where the size of the double-sided UV anti-adhesive film is consistent with that of the substrate 1 or exceeds the edge of the substrate 1 by 1-2 mm, tearing off the first release film 41 or the second release film 45 in the double-sided UV anti-adhesive film 4, aligning the double-sided UV anti-adhesive film 4 with the substrate 1 with gallium nitride through a vacuum film sticking machine, and performing vacuum sticking at a temperature of 25-60 ℃ to form a double-sided UV anti-adhesive film layer arranged on the epitaxial layer after alignment; and placing the attached temporary substrate 10 in an aluminum foil bag to finish packaging.
When the temporary substrate 10 is used for bonding with a carrier plate to be bonded, the carrier plate is a wafer, for example, only the release film on the remaining surface of the double-sided UV anti-adhesive film 4 needs to be torn off, and the carrier plate is attached to the other surface of the UV anti-adhesive film through the vacuum film attachment machine.
Compared with the prior art, the utility model discloses a set up epitaxial layer 2 on substrate 1 to set up interim bonding glue film 3 and form interim base plate 10 on epitaxial layer 2, work as interim base plate 10 can easily separate the bonding with the support plate bonding back that needs interim bonding, because epitaxial layer 2, for example gallium nitride, with substrate 1 can carry out the bonding of separating between substrate 1 and the epitaxial layer 2 through laser irradiation laser degradation bonding face 12, after separating the bonding, the metal gallium on the interim bonding glue film of adhesion 3 is not whole setting, but is the hole form, and hardness is little, consequently can tear interim bonding glue film 3 from the support plate easily after to the visbreaking of interim bonding glue film 3, and technology is very simple.
The above disclosure is only a preferred embodiment of the present invention, and certainly, the scope of the present invention should not be limited thereto, and the same changes and modifications as the claims of the present invention are also included.
Claims (10)
1. A temporary substrate for a semiconductor temporary bonding process, comprising: the temporary substrate comprises a substrate, an epitaxial layer and a temporary bonding glue layer, wherein the epitaxial layer grows on the substrate, the connection surface of the substrate and the epitaxial layer is a laser de-bonding surface, and the temporary bonding glue layer is arranged on the epitaxial layer.
2. A temporary substrate for use in a semiconductor temporary bonding process according to claim 1, wherein: the epitaxial layer comprises an undoped gallium nitride layer or an undoped aluminum nitride layer.
3. A temporary substrate for a semiconductor temporary bonding process as recited in claim 1, wherein: the thickness of the epitaxial layer is 0.1-2.5 microns.
4. A temporary substrate for a semiconductor temporary bonding process as recited in claim 1, wherein: the temporary bonding glue layer comprises a first glue layer adhered to the epitaxial layer, a base material arranged on the first glue layer, a second glue layer arranged on the base material and a protective film layer covering the second glue layer.
5. A temporary substrate for use in a semiconductor temporary bonding process according to claim 4, wherein: the temporary bonding adhesive layer is a UV viscosity-reducing film layer, the first adhesive layer is a UV viscosity-reducing adhesive layer or a pressure-sensitive adhesive layer, the second adhesive layer is a UV viscosity-reducing adhesive layer, and the protective film layer is a release film layer.
6. A temporary substrate for a semiconductor temporary bonding process as recited in claim 1, wherein: the size of the temporary bonding glue layer is the same as that of the substrate or the size of the temporary bonding glue layer exceeds the edge of the substrate by 1-2 mm.
7. A temporary substrate for use in a semiconductor temporary bonding process according to claim 1, wherein: the substrate comprises a sapphire substrate, a silicon carbide substrate or a glass substrate.
8. A temporary substrate for a semiconductor temporary bonding process as recited in claim 1, wherein: the epitaxial layer is formed by a metal organic chemical vapor deposition or hydride vapor phase epitaxy process.
9. A temporary substrate for a semiconductor temporary bonding process as recited in claim 1, wherein: still include the protection bag, interim base plate is located in the protection bag.
10. A temporary substrate for use in a semiconductor temporary bonding process according to claim 9, wherein: the protection bag is an aluminum foil bag.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222013675.2U CN217983305U (en) | 2022-08-01 | 2022-08-01 | Temporary substrate for semiconductor temporary bonding process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222013675.2U CN217983305U (en) | 2022-08-01 | 2022-08-01 | Temporary substrate for semiconductor temporary bonding process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN217983305U true CN217983305U (en) | 2022-12-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202222013675.2U Active CN217983305U (en) | 2022-08-01 | 2022-08-01 | Temporary substrate for semiconductor temporary bonding process |
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| Country | Link |
|---|---|
| CN (1) | CN217983305U (en) |
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2022
- 2022-08-01 CN CN202222013675.2U patent/CN217983305U/en active Active
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