CN217955854U

CN217955854U - Integrated LED chip applied to high-density transparent display screen

Info

Publication number: CN217955854U
Application number: CN202120800317.9U
Authority: CN
Inventors: 刘耀; 郑伟; 熊木地; 全日龙
Original assignee: Dalian Jisite Technology Co ltd
Current assignee: Dalian Jisite Technology Co ltd
Priority date: 2021-04-19
Filing date: 2021-04-19
Publication date: 2022-12-02
Anticipated expiration: 2031-04-19

Abstract

The utility model provides an integration LED chip uses on high density transparent display screen, include: the LED packaging structure comprises a substrate, a driving chip, an LED epitaxial wafer and a packaging body; the substrate is welded on the high-density transparent display screen through the bonding pad, the driving chip and the LED epitaxial wafer are both arranged on the substrate, and the driving chip and the LED epitaxial wafer are electrically connected through the substrate. The driving chip comprises a power module and a driving unit; the power supply module is a voltage converter, an external 12V wide voltage is connected to a VCC end of the driving chip, and the voltage converter converts the 12V wide voltage into 5V which is used as an input voltage of the driving unit; the driving unit comprises an LED driving module and a current adjusting module, and the current adjusting module is used for adjusting the magnitude of the LED driving current. The problem that the whole transparent display screen cannot be lightened due to the fact that the line resistance is increased due to the fact that the transparent display screen is increased and the display density is increased is solved.

Description

Integrated LED chip applied to high-density transparent display screen

Technical Field

The utility model relates to a high density transparent display technology field particularly, especially relates to an use integration LED chip on high density transparent display screen.

Background

With the rapid development of the chip industry, the types of chips are more and more, and chip products are applied to the aspects of our lives. The LED chip is used as a large branch for a transparent display screen, and people mainly require the transparent display screen to have large area and high display density. However, the conventional LED chip cannot meet these requirements because the power supply voltage of the conventional LED chip is 5V, and when the display screen has a large area and a high required display density, the 5V voltage cannot drive the whole high-density transparent display screen because the line resistance of the display screen is too large. Therefore, a new LED chip is urgently needed to solve these problems.

SUMMERY OF THE UTILITY MODEL

According to the technical problem that the whole transparent display screen can be completely driven only by high wide voltage input due to the large area, high display density and large line resistance of the transparent display screen, but the driving voltage of the traditional LED chip can only be 5V, the integrated LED chip is provided. The utility model discloses a power module converts 12V's wide voltage into 5V's input voltage and prevents that the chip from burning out for the drive unit power supply. Or the low current is used for realizing the lighting of the high-density transparent display screen by adopting a current regulation mode. The integrated LED chip of the high-density transparent display screen can well meet the requirements of people on the LED chip at present.

The utility model discloses a technical means as follows:

an integrated LED chip is applied to a high-density transparent display screen and structurally comprises a substrate, a driving chip and an LED epitaxial wafer; the substrate is welded on the high-density transparent display screen through the bonding pad, the driving chip and the LED epitaxial wafer are both arranged on the substrate, and the driving chip and the LED epitaxial wafer are electrically connected through the substrate.

Further, the driving chip comprises a power module and a driving unit; the power supply module is a voltage converter, the external 12V wide voltage is connected to the VCC end of the driving chip, and the voltage converter converts the 12V wide voltage into 5V which is used as the input voltage of the driving unit; the driving unit comprises an LED driving module and a current adjusting module, and the current adjusting module is used for adjusting the magnitude of the LED driving current.

Furthermore, the driving chip and the LED epitaxial wafer are welded at corresponding positions of the substrate in a flip-chip manner; namely, the connecting wires of the driving chip and the LED epitaxial wafer are all tiled on the substrate and are respectively connected with the corresponding welding pins of the driving chip and the LED epitaxial wafer.

Furthermore, the driving chip is connected with the LED epitaxial wafer by adopting a flying wire; namely, the interface on the driving chip is connected with the LED epitaxial wafer through a flying wire, and the corresponding interface on the driving chip is respectively connected with the anode and cathode of the power supply and the data input interface through the flying wire.

Furthermore, a packaging body is further arranged on the integrated LED chip, is arranged on the substrate and is attached to the substrate through high-transparency optical cement.

Further, the LED epitaxial wafer comprises an LED epitaxial wafer R, an LED epitaxial wafer G and an LED epitaxial wafer B.

Compared with the prior art, the utility model has the advantages of it is following:

the utility model provides an integration LED chip, its power module converts wide voltage input range 9-36V's mains voltage into 5V's LED drive unit required voltage. The driving unit comprises an LED driving module and a current adjusting module, wherein the current adjusting module is used for adjusting the size of LED driving current, and the whole high-density transparent display screen is driven by low current, so that the problem that the whole transparent display screen cannot be lightened due to the increase of the line resistance caused by the increase of the transparent display screen and the increase of the display density is solved.

Based on the reason above, the utility model discloses can extensively promote in fields such as high density transparent display screen.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the description of the embodiments or the prior art are briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without inventive labor.

Fig. 1 is a schematic diagram of the integrated LED chip of the present invention applied to a high-density transparent display screen.

Fig. 2 is a schematic diagram of a chip pad and a circuit structure of the transparent display screen.

Fig. 3 is a schematic diagram of an FPC pad and a circuit structure of the transparent display screen.

Fig. 4 is a top view of the integrated LED chip provided in the embodiment of the present invention.

Fig. 5 is a front view of an integrated LED chip provided in an embodiment of the present invention.

Fig. 6 is a top view of an integrated LED chip according to another embodiment of the present invention.

Fig. 7 is a front view of an integrated LED chip according to another embodiment of the present invention.

Fig. 8 is a block diagram of the driving chip structure of the present invention.

Fig. 9 is the pin diagram of the 4-pin LED chip of the present invention.

Fig. 10 is a schematic diagram of the circuit layout of the 4-pin LED chip of the present invention.

In the figure: 1. a substrate; 2. a driving chip; 2-1, a power supply module; 2-2, a drive unit; 3. an LED epitaxial wafer; 3-1, an LED epitaxial wafer R;3-2, an LED epitaxial wafer G;3-3, an LED epitaxial wafer B; 4. a pad; 5. a package body; 6. high transparent optical cement; 7. a high-density transparent display screen; 7-1, FPC connector pads; 7-2, a micro-conductor solid line; 7-3, micro conductive grid lines; 7-4, a pin pad; 7-5, an insulating region; 7-6 and FPC connector.

Detailed Description

It should be noted that, in the case of no conflict, the embodiments and features of the embodiments of the present invention may be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings in conjunction with embodiments.

To make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the invention. As used herein, the singular forms "a", "an", and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.

Unless specifically stated otherwise, the relative arrangement of the components and steps, the numerical expressions, and numerical values set forth in these embodiments do not limit the scope of the present invention. Meanwhile, it should be understood that the sizes of the respective portions shown in the drawings are not drawn in an actual proportional relationship for the convenience of description. Techniques, methods, and apparatus that are known by one of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate. Any specific values in all examples shown and discussed herein are to be construed as exemplary only and not as limiting. Thus, other examples of the exemplary embodiments may have different values. It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.

In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the orientation words such as "front, back, up, down, left, right", "horizontal, vertical, horizontal" and "top, bottom", etc. are usually based on the orientation or positional relationship shown in the drawings, and are only for convenience of description and simplicity of description, and in the case of not making a contrary explanation, these orientation words do not indicate and imply that the device or element in question must have a specific orientation or be constructed and operated in a specific orientation, and therefore should not be construed as limiting the scope of the present invention: the terms "inner and outer" refer to the inner and outer relative to the profile of the respective component itself.

For ease of description, spatially relative terms such as "over 8230," "upper surface," "above," and the like may be used herein to describe the spatial positional relationship of one device or feature to other devices or features as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if a device in the figures is turned over, devices described as "above" or "on" other devices or configurations would then be oriented "below" or "under" the other devices or configurations. Thus, the exemplary terms "at 8230; \8230; 'above" may include both orientations "at 8230; \8230;' above 8230; 'at 8230;' below 8230;" above ". The device may be otherwise variously oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

It should be noted that the terms "first", "second", and the like are used to define the components, and are only used for convenience of distinguishing the corresponding components, and if not stated otherwise, the terms have no special meaning, and therefore, the scope of the present invention should not be construed as being limited.

As shown in fig. 1-3, the integrated LED chip provided by the present invention is applied to a high-density transparent display 7, and the high-density transparent display 7 includes a micro solid conductor circuit 7-2, a micro conductive grid circuit 7-3 and an FPC connector 7-6; the micro conductive grid circuit 7-3 is connected to the high-density transparent display 7, the micro conducting solid circuit 7-2 is arranged at the edge of the high-density transparent display 7, one end of the micro conducting solid circuit 7-2 is connected with the micro conductive grid circuit 7-3, the other end of the micro conducting solid circuit is connected with the FPC connector bonding pad 7-1, and the FPC connector bonding pad 7-1 is used for mounting the FPC connector 7-6. The high-density transparent display screen 7 is also provided with an insulation area 7-5 to prevent the mutual short circuit of the circuits between the pins. The high-density transparent display screen 7 can normally work when the voltage is input in the wide voltage input range of 9-36V, and the wide voltage input chip is needed because the area on the transparent display screen is large, the dot spacing is dense, and the grid resistance from the bottom to the top is large.

As shown in fig. 4-7, the utility model provides an integrated LED chip, include: the LED epitaxial wafer comprises a substrate 1, a driving chip 2 and an LED epitaxial wafer 3; the substrate 1 is welded on the high-density transparent display screen 7 through the bonding pad 4, the driving chip 2 and the LED epitaxial wafer 3 are both arranged on the substrate 1, and the driving chip 2 and the LED epitaxial wafer 3 are electrically connected through the substrate 1.

In specific implementation, as a preferred embodiment of the present invention, as shown in fig. 8-9, the driving chip 2 includes a power module 2-1 and a driving unit 2-2; the power supply module 2-1 is a voltage converter, an external 12V voltage is connected to the 2VCC end of the driving chip, and the voltage converter converts a 12V wide voltage into 5V which is used as an input voltage of the driving unit 2-2; the driving unit 2-2 comprises an LED driving module and a current adjusting module, wherein the current adjusting module is used for adjusting the magnitude of the LED driving current. The specific working principle is as follows:

example 1:

the LED chip is supposed to be pasted on the traditional flexible transparent display screen, the distance between two rows of lamps is fixed, the whole width of the grid is unchanged, and when the resistance R is unchanged, the following two conditions are adopted:

the first condition is as follows: p = U × I, conventional supply voltage U ₁ =5V, the supply voltage U at this time ₂ Number of LED chips which can be driven by traditional voltage is N =12V ₁ The power of the LED chip is not changed, so that

The input current I at the moment is obtained ₂ With the conventional input current I ₁ Satisfy I ₂ ＝0.417I ₁ . By

Number N of LED chips which can be driven by voltage at the time ₂ ＝2.4N ₁ 。

And conclusion one: the flexible transparent display screen with larger area can be controlled to normally display.

Case two: assuming a quiescent drive current I _Module For controlling the lamp ignition current I conventionally _RGB0 0.1 times of the current I, the current I is adjusted to a low current level _RGB1 Is I _RGB0 0.2 times of the voltage, regulating the current I to the medium current level _RGB2 Is a 1 _RGB0 0.4 times of the current I adjusted to the high current level _RGB3 Is equal to I _RGB0 . From I = I _Module +I _RGB The number of LED chips driven by the traditional input current is N ₀ It can be derived that: conventional input current I ₀ ＝1.1I _RGB0 (ii) a Regulating input current I to low current level ₁ ＝0.3I _RGB0 (ii) a Regulating input current I to medium current range ₂ ＝0.5I _RGB0 (ii) a Regulating input current I to high current level ₃ ＝1.1I _RGB0 . The same can be derived: the number N of the LED chips which can be driven when the current is adjusted to a low current level ₁ ＝3.67N ₀ (ii) a Number N of LED chips capable of being driven when medium current gear is adjusted ₂ ＝2.2N ₀ (ii) a L drivable upon setting to a high current rangeNumber of ED chips N ₃ ＝N ₀ 。

And a second conclusion: the flexible transparent display screen with larger area can be controlled to normally display.

Example 2:

assuming that the LED chip is mounted on the high-density transparent display, i.e. the distance between two rows of lamps is narrowed, the area of the high-density transparent display is unchanged. The resistance equivalent formula R = rho L/S, assuming that the dot spacing is changed from 20 to 10 and the S equivalent is changed to 0.5S, R is obtained _{Secret key} ＝2R _{Transmission device} . In order to ensure that the input voltage of the LED chip is not changed, the voltage of the equivalent wire on the transparent display screen is not changed

To give I _{Secret key} ＝0.5I _{Conveying appliance} . Wherein R is _{Secret key} Resistance of equivalent wires, R, for high-density transparent display screen _{Conveying appliance} Is the resistance of the equivalent wire of the traditional flexible transparent display screen, I _{Secret key} For the current to normally light the whole high-density transparent display screen, I _{Conveying appliance} The current of the whole traditional flexible transparent display screen can be normally lightened.

And conclusion three: less current is required to drive the normal display of the whole high-density transparent display screen.

And a third situation: p = U × I, conventional supply voltage U ₁ =5V, power supply voltage U at this time ₂ Number of LED chips which can be driven by traditional voltage is N =12V ₁ The power of the LED chip is not changed, so that

The input current I at the moment is obtained ₂ With the conventional input current I ₁ Directly satisfy I ₂ ＝0.417I ₁ From

Obtaining the number N of the LED chips which can be driven by the voltage at the moment ₂ ＝2.4N ₁ . The equivalent resistance of the metal grid of the LED chip farthest from the power input is increased, so the voltage drop on the metal grid is increased, and the LED chip can adopt wide voltage inputAnd the normal work of the LED chip is ensured. Therefore, the display density of the traditional flexible transparent display screen is improved, and the flexible transparent display screen can be applied to high-density transparent display screens.

Case four: assuming a quiescent drive current I _Module For controlling the lamp ignition current I conventionally _RGB0 0.1 times of the total current, adjust the current I to the low current level _RGB1 Is I _RGB0 0.2 times of the total current, adjust the current I to the medium current level _RGB2 Is I _RGB0 0.4 times of the current I adjusted to the high current level _RGB3 Is equal to I _RGB0 . By I = I _Module +I _RGB The number of LED chips driven by the traditional input current is N ₀ Conventional input current I can be derived ₀ ＝1.1I _RGB0 (ii) a Regulating input current I to low current level ₁ ＝0.3I _RGB0 (ii) a Regulating input current I to medium current gear ₂ ＝0.5I _RGB0 (ii) a Regulating input current I to high current level ₃ ＝1.1I _RGB0 . The number N of the LED chips which can be driven when the current is adjusted to the low current level can be obtained in the same way ₁ ＝3.67N ₀ (ii) a Number N of LED chips capable of being driven when medium current gear is adjusted ₂ ＝2.2N ₀ (ii) a The number N of the LED chips which can be driven when the high current gear is adjusted ₃ ＝N ₀ 。

And conclusion four: the display density of the traditional flexible transparent display screen is improved, and the flexible transparent display screen can be applied to high-density transparent display screens.

In specific implementation, as a preferred embodiment of the present invention, the LED epitaxial wafer 3 includes an LED epitaxial wafer R3-1, an LED epitaxial wafer G3-2, and an LED epitaxial wafer B3-3.

In this embodiment, with continued reference to fig. 4 to 7, the driving chip 2 and the LED epitaxial wafer 3 are both flip-chip bonded to corresponding positions of the substrate 1; namely, the connecting wires of the driving chip 2 and the LED epitaxial wafer 3 are all tiled on the substrate 1 and are respectively connected to the corresponding soldering pins of the driving chip 2 and the LED epitaxial wafer 3.

In this embodiment, with reference to fig. 4 to 7, the driving chip 2 and the LED epitaxial wafer 3 are connected by flying leads; namely, the interfaces R, G and B on the driving chip 2 are connected with the LED epitaxial wafer R3-1, the LED epitaxial wafer G3-2 and the LED epitaxial wafer B3-3 through flying wires, and the corresponding interfaces on the driving chip 2 are respectively connected with the anode and cathode of a power supply and a data input interface through the flying wires.

In specific implementation, as a preferred embodiment of the present invention, with reference to fig. 4-7, the integrated LED chip is further provided with a package body 5, and the package body 5 is disposed on the substrate 1 and attached to the substrate 1 through a highly transparent optical adhesive 6. In this embodiment, the package body 5 is a cup-shaped or baffle structure.

As shown in fig. 10, for the utility model provides an use the data transfer process at the integration LED chip of high density transparent display screen, in this embodiment, supply power for the drive unit through converting 12V's wide voltage into 5V's LED chip input voltage, prevent that the chip from burning out, outside 12V voltage connection is at LED chip VCC end, converts 12V voltage into 5V voltage drive LED chip through power module 2-1. Thereby, the number of LED chips can be increased by 2.4 times, and the display density is increased. Data is input from the SDI end of the LED chip, and the data is subjected to functions of conversion return-to-zero codes set by a module driving internal program, detection of current magnitude and the like, is output from the SDO end of the LED chip after being free of errors, and enters the next LED chip.

With continued reference to fig. 10, in the present embodiment, the lighting of the high-density transparent display panel is solved by using a low current in a manner of adjusting the current. External voltage is connected to the 2VCC end of the driving chip, when data are input into the driving chip 2, the back 8bit data are current information, when the LED driving module detects a low current gear, the adjusting current is I _RGB1 (ii) a When the LED driving module detects a medium current gear, the current is adjusted to be I _RGB2 (ii) a When the LED driving module detects a high current gear, the current is adjusted to be I _RGB3 . The normal display of the high-density transparent display screen can be satisfied by adjusting to the minimum current.

With continued reference to fig. 10, in the present embodiment, a manner of converting a wide voltage of 12V into an input voltage of 5V of the LED chip to supply power to the LED driving module and a manner of adjusting the current may be adopted at the same time, so as to light the transparent display screen with a larger area and a higher display density with a larger voltage and a lower current.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications or substitutions do not depart from the scope of the invention in its corresponding aspects.

Claims

1. An integrated LED chip, which is applied to a high-density transparent display screen, comprising: the LED chip comprises a substrate (1), a driving chip (2) and an LED epitaxial wafer (3); the substrate (1) is welded on the high-density transparent display screen through the bonding pad (4), the driving chip (2) and the LED epitaxial wafer (3) are arranged on the substrate (1), and the driving chip (2) and the LED epitaxial wafer (3) are electrically connected through the substrate (1).

2. The integrated LED chip according to claim 1, wherein the driving chip (2) comprises a power module (2-1) and a driving unit (2-2); the power supply module (2-1) is a voltage converter, external 12V wide voltage is connected to a VCC end of the driving chip (2), and the voltage converter converts the 12V wide voltage into 5V which is used as input voltage of the driving unit (2-2); the driving unit (2-2) comprises an LED driving module and a current adjusting module, and the current adjusting module is used for adjusting the magnitude of the LED driving current.

3. The integrated LED chip according to claim 1, wherein the driving chip (2) and the LED epitaxial wafer (3) are flip-chip bonded at corresponding positions on the substrate (1); namely, connecting wires of the driving chip (2) and the LED epitaxial wafer (3) are all tiled on the substrate (1) and are respectively connected with corresponding welding pins of the driving chip (2) and the LED epitaxial wafer (3).

4. The integrated LED chip according to claim 3, wherein the driving chip (2) and the LED epitaxial wafer (3) are connected by using flying wires; namely, the interface on the driving chip (2) is connected with the LED epitaxial wafer (3) through a flying wire, and the corresponding interface on the driving chip (2) is respectively connected with the anode and cathode of a power supply and a data input interface through the flying wire.

5. The integrated LED chip according to claim 1, wherein a package body (5) is further arranged on the integrated LED chip, and the package body (5) is arranged on the substrate (1) and is attached to the substrate (1) through a high-transparency optical adhesive (6).

6. The integrated LED chip according to claim 1, wherein the LED epitaxial wafer (3) comprises an LED epitaxial wafer R (3-1), an LED epitaxial wafer G (3-2) and an LED epitaxial wafer B (3-3).