CN217934574U - Vertical cavity surface emitting laser - Google Patents
Vertical cavity surface emitting laser Download PDFInfo
- Publication number
- CN217934574U CN217934574U CN202221919744.XU CN202221919744U CN217934574U CN 217934574 U CN217934574 U CN 217934574U CN 202221919744 U CN202221919744 U CN 202221919744U CN 217934574 U CN217934574 U CN 217934574U
- Authority
- CN
- China
- Prior art keywords
- oxide layer
- current limiting
- current
- layer
- aperture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The application provides a vertical cavity surface emitting laser relates to laser technical field, including the substrate and range upon range of bottom Bragg reflector, active layer, the first oxide layer that has first current and restrict the hole, top Bragg reflector and the compound oxide layer that has second current and restrict the hole in the substrate in proper order, the aperture in second current restriction hole reduces along the direction of active layer to first oxide layer gradually, and first current restriction hole and second current restriction hole correspond at range upon range of direction. Through making the aperture of second current limit hole along the light-emitting direction reduce gradually to the combined action in the first current limit hole of cooperation first oxide layer can effectively improve the restriction effect of electric current, makes more even of current distribution, and can also increase the loss in the resonant cavity, so that reach the effect that the mode is restricted, form the single mode, thereby make the light beam of outgoing can form ideal gaussian beam.
Description
Technical Field
The application relates to the technical field of lasers, in particular to a vertical cavity surface emitting laser.
Background
A Vertical-Cavity Surface-Emitting Laser (VCSEL) is a Laser with a light-Emitting direction perpendicular to the Surface of a resonant Cavity, has the advantages of small threshold current, small divergence angle, circularly symmetric light spot, easy two-dimensional integration and the like, and is widely applied to the fields of optical interconnection, optical storage, optical communication and the like.
The current is usually limited by a single-layer oxide layer in the existing VCSEL device, so that the current can be injected into an active layer through a current limiting hole of an oxidation limiting layer in a concentrated mode, the light emitting quality is improved, but the light emitting form of the existing VCSEL device is usually multi-mode, and the problem of low quality still exists.
SUMMERY OF THE UTILITY MODEL
An object of the present application is to provide a vertical cavity surface emitting laser, which is not enough in the above prior art, so as to solve the problem of low light emitting quality of the existing VCSEL device.
In order to achieve the above purpose, the technical solutions adopted in the embodiments of the present application are as follows:
in an aspect of the embodiments of the present application, a vertical cavity surface emitting laser is provided, including a substrate, and a bottom bragg reflector, an active layer, a first oxide layer having a first current confinement hole, a top bragg reflector, and a composite oxide layer having a second current confinement hole stacked in sequence on the substrate, where an aperture of the second current confinement hole is gradually reduced along a direction from the active layer to the first oxide layer, and the first current confinement hole and the second current confinement hole correspond to each other in a stacking direction.
Optionally, the composite oxide layer includes a plurality of second oxide layers sequentially stacked on the top bragg reflector, each second oxide layer has a sub-current limiting hole, the aperture of the sub-current limiting hole of each second oxide layer gradually decreases along the direction from the active layer to the first oxide layer, and the sub-current limiting holes of each second oxide layer correspond to each other along the stacking direction to form the second current limiting hole.
Optionally, the aperture of the second current confinement hole on the side close to the first oxide layer is equal to the aperture of the first current confinement hole.
Optionally, the first current limiting hole and the second current limiting hole correspond to each other in the stacking direction.
Optionally, a first buffer layer is further disposed between the bottom bragg reflector and the active layer, and a second buffer layer is further disposed between the active layer and the first oxide layer.
Optionally, a contact layer is disposed on a side of the composite oxide layer away from the top bragg reflector.
Optionally, the bottom bragg mirror and the active layer form a stepped structure.
Optionally, a first electrode is disposed on a side of the contact layer away from the composite oxide layer, and a second electrode is disposed on a mesa of the bottom bragg reflector close to the active layer.
Optionally, the first electrode is a P-type electrode and the second electrode is an N-type electrode.
Optionally, the first electrode is a ring electrode.
The beneficial effect of this application includes:
the application provides a vertical cavity surface emitting laser, including the substrate and range upon range of bottom Bragg reflector, active layer, the first oxide layer that has first current limit hole, top Bragg reflector and the compound oxide layer that has second current limit hole on the substrate in proper order, the aperture in second current limit hole reduces along the direction of active layer to first oxide layer gradually, and first current limit hole and second current limit hole correspond at range upon range of direction. Through making the aperture of second current limit hole along the light-emitting direction reduce gradually to the combined action in the first current limit hole of cooperation first oxide layer can effectively improve the restriction effect of electric current, makes more even of current distribution, and can also increase the loss in the resonant cavity, so that reach the effect that the mode is restricted, form the single mode, thereby make the light beam of outgoing can form ideal gaussian beam.
Drawings
To more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and those skilled in the art can also obtain other related drawings based on the drawings without inventive efforts.
Fig. 1 is a schematic structural diagram of a vertical cavity surface emitting laser according to an embodiment of the present disclosure;
fig. 2 is a second schematic structural diagram of a vertical cavity surface emitting laser according to an embodiment of the present disclosure;
fig. 3 is a third schematic structural diagram of a vertical cavity surface emitting laser according to an embodiment of the present disclosure;
fig. 4 is a schematic structural diagram of a composite oxide layer according to an embodiment of the present disclosure.
Icon: 110-a substrate; 120-bottom bragg mirror; 130-a first buffer layer; 140-an active layer; 150-a second buffer layer; 160-first oxide layer; 170-a third buffer layer; 180-top bragg mirror; 190-a composite oxide layer; 191-oxide layer one; 192-oxide layer two; 193-oxide layer three; 200-a contact layer; 210-a first electrode; 220-a second electrode; 230-a first current-limiting aperture; 240-second current limiting aperture.
Detailed Description
The embodiments set forth below represent the necessary information to enable those skilled in the art to practice the embodiments and illustrate the best mode of practicing the embodiments. Upon reading the following description in light of the accompanying drawing figures, those skilled in the art will understand the concepts of the disclosure and will recognize applications of these concepts not particularly addressed herein. It should be understood that these concepts and applications fall within the scope of the disclosure and the accompanying claims.
It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present disclosure. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
It will be understood that when an element such as a layer, region or substrate is referred to as being "on" or "extending" onto "another element, it can be directly on or extend directly onto the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or extending "directly onto" another element, there are no intervening elements present. Also, it will be understood that when an element such as a layer, region or substrate is referred to as being "on" or "extending over" another element, it can be directly on or extend directly over the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or extending "directly over" another element, there are no intervening elements present. It will also be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements present.
Relative terms such as "below …" or "above …" or "upper" or "lower" or "horizontal" or "vertical" may be used herein to describe the relationship of one element, layer or region to another element, layer or region, as shown in the figures. It will be understood that these terms and those discussed above are intended to encompass different orientations of the device in addition to the orientation depicted in the figures.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used herein, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms used herein should be interpreted as having a meaning that is consistent with their meaning in the context of this specification and the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
An aspect of the embodiment of the application, a vertical cavity surface emitting laser is provided, be provided with compound oxide layer above top bragg reflector, compound oxide layer has second current limit hole, through making second current limit hole reduce along the aperture of light-emitting direction gradually, and cooperate the combined action in the first current limit hole of first oxide layer, can effectively improve the limitation effect of electric current, make current distribution more even, and can also increase the loss in the resonant cavity, so that reach the effect that the mode is limited, form the single mode, thereby make the light beam of outgoing can form ideal gaussian beam. Embodiments of the present application will be described below with reference to the accompanying drawings.
Referring to fig. 1, a vcsel includes a substrate 110, and a bottom bragg reflector 120, an active layer 140, a first oxide layer 160, a top bragg reflector 180, and a composite oxide layer 190 sequentially stacked on the substrate 110. The first oxide layer 160 has a first current limiting hole 230, and the distribution area of the current can be limited by the first current limiting hole 230, as shown in fig. 2, when the current passes through the first oxide layer 160, the current is limited in the first current limiting hole 230, so that a higher intra-cavity current density can be preliminarily injected into the active layer 140, and a higher internal quantum efficiency can be obtained.
As shown in fig. 1, the composite oxide layer 190 disposed above the top bragg reflector 180 has a second current limiting hole 240, and the distribution region of the current can be limited by the second current limiting hole 240, as shown in fig. 2, when the current passes through the composite oxide layer 190, the current is limited in the second current limiting hole 240, which is helpful for further increasing the current density in the cavity, thereby obtaining higher internal quantum efficiency.
As shown in fig. 1, the first current limiting hole 230 and the second current limiting hole 240 correspond to each other in the stacking direction, and the aperture of the second current limiting hole 240 gradually decreases along the direction from the active layer 140 to the first oxide layer 160, i.e., the holes form an inverted funnel shape, so that, with reference to fig. 2, after the device is turned on, the current is firstly limited by the second current limiting hole 240 of the composite oxide layer 190, then limited by the first current limiting hole 230 of the first oxide layer 160, and then injected into the active layer 140, thereby effectively increasing the current density in the cavity and obtaining higher internal quantum efficiency. On this basis, because photons oscillate in the cavity for a number of times and generate gain to achieve a single mode, please refer to fig. 3, the loss in the resonant cavity can be increased by gradually changing the aperture of the second current limiting hole 240, so as to achieve the effect of mode confinement, which is convenient for forming a single mode, and further obtain an ideal gaussian beam, i.e. improve the light-emitting quality of the device.
As shown in fig. 1, the first current confinement hole 230 and the second current confinement hole 240 correspond positively in the lamination direction, and thus the in-region equivalent resistance R can be made lower than that of the conventional single current confinement hole scheme, thereby contributing to the improvement of the device performance.
Referring to fig. 1, the composite oxide layer 190 includes a plurality of second oxide layers sequentially stacked on the top bragg reflector 180, each of the second oxide layers has a sub-current limiting hole, the aperture of the sub-current limiting hole of the second oxide layers gradually decreases along the direction from the active layer 140 to the first oxide layer 160, and the sub-current limiting holes of the second oxide layers correspond to each other along the stacking direction, so as to form the second current limiting hole 240.
Referring to fig. 1, the aperture of the second current limiting hole 240 close to the first oxide layer 160 is equal to the aperture of the first current limiting hole 230, so that the current limiting effect can be further improved, the equivalent resistance R of the region can be reduced, and a single mode can be conveniently formed.
When the second current confinement hole 240 is formed in an inverted funnel shape as shown in fig. 1, it can be implemented by controlling an oxidation rate, and it should be understood that, in the preparation of the vertical cavity surface emitting laser, the second current confinement hole 240 is prepared by a lateral oxidation process, and therefore, based on the composite oxide layer 190 including a plurality of second oxide layers, the gradual change of the aperture of the sub-current confinement holes on the plurality of second oxide layers can be implemented by controlling the oxidation rate of the second oxide layer of each layer, for example, from bottom to top, the oxidation rate of the second oxide layer is increased layer by layer, and thus, in the lateral oxidation process, under the same process condition, the aperture of each sub-current confinement hole is gradually reduced due to the increase of the oxidation rate of the second oxide layer by layer, thereby implementing the preparation of the second current confinement hole 240.
In adjusting the oxidation rate of each of the second oxide layers, the adjustment of the oxidation rate can be achieved by changing the content of the aluminum component in each of the second oxide layers, for example, the oxidation rate becomes faster as the content of the aluminum component increases. Therefore, when the aperture of the second current limiting hole 240 is gradually decreased, the aluminum composition of the second oxide layer is gradually increased from the bottom to the top, so that the oxidation rate of the second oxide layer is gradually increased, and the second current limiting hole 240 with the gradually decreased aperture is formed in the lateral oxidation process.
Specifically, as shown in fig. 1 and 4, the composite oxide layer 190 includes three second oxide layers sequentially stacked on the top bragg reflector 180, and for convenience of distinction, the three second oxide layers are hereinafter referred to as an oxide layer one 191, an oxide layer two 192, and an oxide layer three 193. The first oxide layer 191, the second oxide layer 192 and the third oxide layer 193 are respectively provided with a sub-current limiting hole, and the sub-current limiting holes of the first oxide layer 191, the second oxide layer 192 and the third oxide layer 193 are vertically and positively corresponding to each other, so that the whole formed by the first oxide layer 191, the second oxide layer 192 and the third oxide layer 193 is taken as the second current limiting hole 240, wherein the aperture D1 of the sub-current limiting hole of the first oxide layer 191 is larger than the aperture D2 of the sub-current limiting hole of the second oxide layer 192, the aperture D2 of the sub-current limiting hole of the second oxide layer 192 is larger than the aperture D3 of the sub-current limiting hole of the third oxide layer 193, and therefore the second current limiting hole 240 is formed into an inverted funnel shape.
In the preparation, firstly, the content of the aluminum component from the first oxide layer 191 to the second oxide layer 192 to the third oxide layer 193 can be gradually increased, that is, the content of the aluminum component of the first oxide layer 191 is less than that of the second oxide layer 192, and the content of the aluminum component of the second oxide layer 192 is less than that of the third oxide layer 193, so that in the lateral oxidation process, the oxidation rate of the first oxide layer 191 is less than that of the second oxide layer 192, the oxidation rate of the second oxide layer 192 is less than that of the third oxide layer 193, further, the aperture D1 of the sub-current limiting hole of the first oxide layer 191 is larger than the aperture D2 of the sub-current limiting hole of the second oxide layer 192, and the aperture D2 of the sub-current limiting hole of the second oxide layer 192 is larger than the aperture D3 of the sub-current limiting hole of the third oxide layer 193.
In one embodiment: as shown in FIG. 4, the first oxide layer 191, the second oxide layer 192, and the third oxide layer 193 are AlGaAs layers with different aluminum composition, and the first oxide layer 191 is Al (0.98) Ga (0.02) As, the second oxide layer 192 is Al (0.985) Ga (0.015) As, oxide layer three 193 is Al (0.99) Ga (0.01) As。
Correspondingly, when the aperture D1 of the sub-current limiting hole of the first oxide layer 191 is 6.0 μm, the aperture D2 of the sub-current limiting hole of the second oxide layer 192 is 5.5 μm, and the aperture D3 of the sub-current limiting hole of the third oxide layer 193 is 4.0 μm;
when the aperture D1 of the sub-current limiting hole of the first oxide layer 191 is 7.0 μm, the aperture D2 of the sub-current limiting hole of the second oxide layer 192 is 6.4 μm, and the aperture D3 of the sub-current limiting hole of the third oxide layer 193 is 4.7 μm;
when the aperture D1 of the sub-current limiting hole of the first oxide layer 191 is 8.0 μm, the aperture D2 of the sub-current limiting hole of the second oxide layer 192 is 7.3 μm, and the aperture D3 of the sub-current limiting hole of the third oxide layer 193 is 5.3 μm;
when the aperture D1 of the sub-current limiting hole of the first oxide layer 191 is 9.0 μm, the aperture D2 of the sub-current limiting hole of the second oxide layer 192 is 8.2 μm, and the aperture D3 of the sub-current limiting hole of the third oxide layer 193 is 6.0 μm;
when the aperture D1 of the sub-current limiting hole of the first oxide layer 191 is 10.0 μm, the aperture D2 of the sub-current limiting hole of the second oxide layer 192 is 9.1 μm, and the aperture D3 of the sub-current limiting hole of the third oxide layer 193 is 6.7 μm;
when the aperture D1 of the sub-current limiting hole of the first oxide layer 191 is 11.0 μm, the aperture D2 of the sub-current limiting hole of the second oxide layer 192 is 10.0 μm, and the aperture D3 of the sub-current limiting hole of the third oxide layer 193 is 7.3 μm;
when the aperture D1 of the sub-current limiting hole of the first oxide layer 191 is 12.0 μm, the aperture D2 of the sub-current limiting hole of the second oxide layer 192 is 10.9 μm, and the aperture D3 of the sub-current limiting hole of the third oxide layer 193 is 8.0 μm;
when the aperture diameter D1 of the sub-current limiting hole of the first oxide layer 191 is 13.0 μm, the aperture diameter D2 of the sub-current limiting hole of the second oxide layer 192 is 11.8 μm, and the aperture diameter D3 of the sub-current limiting hole of the third oxide layer 193 is 8.7 μm.
In another embodiment: as shown in FIG. 4, the first oxide layer 191, the second oxide layer 192, and the third oxide layer 193 are AlGaAs layers with different aluminum composition, and the first oxide layer 191 is Al (0.98) Ga (0.02) As, the second oxide layer 192 is Al (0.985) Ga (0.015) As, oxide layer three 193 is Al (0.995) Ga (0.005) As。
Correspondingly, when the aperture D1 of the sub-current limiting hole of the first oxide layer 191 is 6.0 μm, the aperture D2 of the sub-current limiting hole of the second oxide layer 192 is 5.5 μm, and the aperture D3 of the sub-current limiting hole of the third oxide layer 193 is 2.7 μm;
when the aperture D1 of the sub-current limiting hole of the first oxide layer 191 is 7.0 μm, the aperture D2 of the sub-current limiting hole of the second oxide layer 192 is 6.4 μm, and the aperture D3 of the sub-current limiting hole of the third oxide layer 193 is 3.1 μm;
when the aperture D1 of the sub-current limiting hole of the first oxide layer 191 is 8.0 μm, the aperture D2 of the sub-current limiting hole of the second oxide layer 192 is 7.3 μm, and the aperture D3 of the sub-current limiting hole of the third oxide layer 193 is 3.6 μm;
when the aperture D1 of the sub-current limiting hole of the first oxide layer 191 is 9.0 μm, the aperture D2 of the sub-current limiting hole of the second oxide layer 192 is 8.2 μm, and the aperture D3 of the sub-current limiting hole of the third oxide layer 193 is 4.0 μm;
when the aperture D1 of the sub-current limiting hole of the first oxide layer 191 is 10.0 μm, the aperture D2 of the sub-current limiting hole of the second oxide layer 192 is 9.1 μm, and the aperture D3 of the sub-current limiting hole of the third oxide layer 193 is 4.4 μm;
when the aperture D1 of the sub-current limiting hole of the first oxide layer 191 is 11.0 μm, the aperture D2 of the sub-current limiting hole of the second oxide layer 192 is 10.0 μm, and the aperture D3 of the sub-current limiting hole of the third oxide layer 193 is 4.9 μm;
when the aperture D1 of the sub-current limiting hole of the first oxide layer 191 is 12.0 μm, the aperture D2 of the sub-current limiting hole of the second oxide layer 192 is 10.9 μm, and the aperture D3 of the sub-current limiting hole of the third oxide layer 193 is 5.3 μm;
when the aperture diameter D1 of the sub-current limiting hole of the first oxide layer 191 is 13.0 μm, the aperture diameter D2 of the sub-current limiting hole of the second oxide layer 192 is 11.8 μm, and the aperture diameter D3 of the sub-current limiting hole of the third oxide layer 193 is 5.8 μm.
In yet another embodiment: as shown in FIG. 4, the first oxide layer 191, the second oxide layer 192, and the third oxide layer 193 are AlGaAs layers with different aluminum composition, and the first oxide layer 191 is Al (0.98) Ga (0.02) As, the second oxide layer 192 is Al (0.99) Ga (0.01) As, oxide layer three 193 is Al (1.00) Ga (0.00) As。
Correspondingly, when the aperture D1 of the sub-current limiting hole of the oxide layer I191 is 6.0 μm, the aperture D2 of the sub-current limiting hole of the oxide layer II 192 is 4.0 μm, and the aperture D3 of the sub-current limiting hole of the oxide layer III 193 is 2.0 μm;
when the aperture D1 of the sub-current limiting hole of the first oxide layer 191 is 7.0 μm, the aperture D2 of the sub-current limiting hole of the second oxide layer 192 is 4.7 μm, and the aperture D3 of the sub-current limiting hole of the third oxide layer 193 is 2.3 μm;
when the aperture D1 of the sub-current limiting hole of the first oxide layer 191 is 8.0 μm, the aperture D2 of the sub-current limiting hole of the second oxide layer 192 is 5.3 μm, and the aperture D3 of the sub-current limiting hole of the third oxide layer 193 is 2.7 μm;
when the aperture D1 of the sub-current limiting hole of the first oxide layer 191 is 9.0 μm, the aperture D2 of the sub-current limiting hole of the second oxide layer 192 is 6.0 μm, and the aperture D3 of the sub-current limiting hole of the third oxide layer 193 is 3.0 μm;
when the aperture D1 of the sub-current limiting hole of the first oxide layer 191 is 10.0 μm, the aperture D2 of the sub-current limiting hole of the second oxide layer 192 is 6.7 μm, and the aperture D3 of the sub-current limiting hole of the third oxide layer 193 is 3.3 μm;
when the aperture D1 of the sub-current limiting hole of the first oxide layer 191 is 11.0 μm, the aperture D2 of the sub-current limiting hole of the second oxide layer 192 is 7.3 μm, and the aperture D3 of the sub-current limiting hole of the third oxide layer 193 is 3.7 μm;
when the aperture D1 of the sub-current limiting hole of the first oxide layer 191 is 12.0 μm, the aperture D2 of the sub-current limiting hole of the second oxide layer 192 is 8.0 μm, and the aperture D3 of the sub-current limiting hole of the third oxide layer 193 is 4.0 μm;
when the aperture diameter D1 of the sub-current limiting hole of the first oxide layer 191 is 13.0 μm, the aperture diameter D2 of the sub-current limiting hole of the second oxide layer 192 is 8.7 μm, and the aperture diameter D3 of the sub-current limiting hole of the third oxide layer 193 is 4.3 μm.
When the aperture diameter D1 of the sub-current confinement hole of the first oxide layer 191 needs to be equal to the aperture diameter of the first current confinement hole 230 of the first oxide layer 160, the oxidation rates of the first oxide layer 160 and the first oxide layer 191 can be controlled to be equal to each other.
Optionally, as shown in fig. 1, a first buffer layer 130 is further disposed between the bottom bragg reflector 120 and the active layer 140, a second buffer layer 150 is further disposed between the active layer 140 and the oxide confinement layer, and a third buffer layer 170 is disposed between the first oxide layer 160 and the top bragg reflector 180, thereby contributing to the improvement of device performance.
Optionally, a contact layer 200 is disposed on a side of the composite oxide layer 190 away from the top bragg reflector 180, so that when the device is turned on, current can be injected through the contact layer 200.
Optionally, after the epitaxial structure is formed on the substrate 110, the bottom bragg reflector 120 and the active layer 140 may form a step structure by mesa etching, so that lateral oxidation may be facilitated.
Optionally, a first electrode 210 is disposed on a side of the contact layer 200 facing away from the composite oxide layer 190, and a second electrode 220 is disposed on a mesa of the bottom bragg reflector 120 close to the active layer 140, thereby facilitating electrical connection of the device.
Optionally, the first electrode 210 is a P-type electrode, and the second electrode 220 is an N-type electrode.
Optionally, the first electrode 210 is a ring electrode.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (10)
1. The vertical cavity surface emitting laser is characterized by comprising a substrate, a bottom Bragg reflector, an active layer, a first oxidation layer with a first current limiting hole, a top Bragg reflector and a composite oxidation layer with a second current limiting hole, wherein the bottom Bragg reflector, the active layer, the first oxidation layer with the first current limiting hole, the top Bragg reflector and the composite oxidation layer with the second current limiting hole are sequentially stacked on the substrate, the aperture of the second current limiting hole is formed in a way that the active layer is gradually reduced to the direction of the first oxidation layer, and the first current limiting hole corresponds to the second current limiting hole in the stacking direction.
2. A vertical cavity surface emitting laser according to claim 1, wherein said composite oxide layer includes a plurality of second oxide layers stacked in sequence on said top bragg mirror, each of said second oxide layers having a sub-current confinement hole, the hole diameter of the sub-current confinement hole of said plurality of second oxide layers gradually decreasing in a direction from said active layer to said first oxide layer, the sub-current confinement holes of said plurality of second oxide layers being aligned in said stacking direction to form said second current confinement hole.
3. A vertical cavity surface emitting laser according to claim 1 or 2, wherein an aperture of said second current confinement hole on a side close to said first oxide layer is equal to an aperture of said first current confinement hole.
4. A vertical cavity surface emitting laser according to claim 1 or 2, wherein said first current confinement hole and said second current confinement hole correspond positively in said stacking direction.
5. A vertical cavity surface emitting laser according to claim 1, wherein a first buffer layer is further provided between said bottom Bragg reflector and said active layer, and a second buffer layer is further provided between said active layer and said first oxide layer.
6. A vertical cavity surface emitting laser according to claim 1, wherein a contact layer is provided on a side of said complex oxide layer facing away from said top Bragg reflector.
7. A vertical cavity surface emitting laser according to claim 6, wherein said bottom Bragg reflector and said active layer form a stepped structure.
8. A vertical Cavity surface emitting laser according to claim 7 wherein a first electrode is provided on a side of said contact layer opposite said composite oxide layer and a second electrode is provided on the mesa of said bottom Bragg reflector adjacent said active layer.
9. A vertical Cavity surface emitting laser according to claim 8 wherein said first electrode is a P-type electrode and said second electrode is an N-type electrode.
10. A vertical cavity surface emitting laser according to claim 8, wherein said first electrode is a ring-shaped electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221919744.XU CN217934574U (en) | 2022-07-22 | 2022-07-22 | Vertical cavity surface emitting laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221919744.XU CN217934574U (en) | 2022-07-22 | 2022-07-22 | Vertical cavity surface emitting laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN217934574U true CN217934574U (en) | 2022-11-29 |
Family
ID=84148367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202221919744.XU Active CN217934574U (en) | 2022-07-22 | 2022-07-22 | Vertical cavity surface emitting laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN217934574U (en) |
-
2022
- 2022-07-22 CN CN202221919744.XU patent/CN217934574U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6320893B1 (en) | Surface emitting semiconductor laser | |
| US7924899B2 (en) | Vertical-cavity surface-emitting laser diode (VCSEL), method for fabricating VCSEL, and optical transmission apparatus | |
| JP7464643B2 (en) | Etched planarized VCSEL and method for making same - Patents.com | |
| US20110007769A1 (en) | Laser diode | |
| US8027370B2 (en) | Semiconductor device | |
| CN111817129A (en) | VCSEL chip and manufacturing method thereof | |
| JP2009164466A (en) | Surface emitting semiconductor laser, and method of manufacturing the same | |
| KR100950263B1 (en) | Micro-lens integrated single-mode vertical cavity surface emitting laser and method for manufacturing thereof | |
| JP2000307189A (en) | Surface emission laser array | |
| CN113140965B (en) | Semiconductor laser epitaxial structure and preparation method thereof | |
| US6846685B2 (en) | Vertical-cavity surface-emitting semiconductor laser | |
| CN217934574U (en) | Vertical cavity surface emitting laser | |
| CN114865453A (en) | Vertical cavity surface emitting laser with triple oxide holes and manufacturing method thereof | |
| CN112290379B (en) | VCSEL chip and manufacturing method thereof | |
| JP2002043696A (en) | Semiconductor laser device | |
| CN217934573U (en) | Vertical cavity surface emitting laser | |
| CN218182710U (en) | Vertical cavity surface emitting laser | |
| JP2004179640A (en) | Semiconductor laser, module for optical transmission, and optical communication system | |
| CN113381294B (en) | Monolithic integrated edge-emitting laser and preparation method thereof | |
| CN221041919U (en) | Single-mode low-divergence-angle vertical cavity surface emitting laser | |
| CN218648331U (en) | Semiconductor device and electronic device | |
| KR100394095B1 (en) | Vertical cavity surface emitting laser diode and fabricating method thereof | |
| JP2006228959A (en) | Surface-emitting semiconductor laser | |
| CN115313151A (en) | Vertical cavity surface emitting laser | |
| CN114865452A (en) | Efficient vertical cavity surface EML chip with oxidation isolation layer and preparation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 518000 room B125, 1f, Shunfeng industrial plant, No. 2 Hongliu Road, Fubao community, Fubao street, Futian District, Shenzhen, Guangdong Province Patentee after: Shenzhen Jiaminli Photoelectric Co.,Ltd. Address before: 518000 room B125, 1f, Shunfeng industrial plant, No. 2 Hongliu Road, Fubao community, Fubao street, Futian District, Shenzhen, Guangdong Province Patentee before: Shenzhen deminli optoelectronics Co.,Ltd. |