CN217901064U - Pressure sensor with multilayer structure - Google Patents
Pressure sensor with multilayer structure Download PDFInfo
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- CN217901064U CN217901064U CN202222303268.5U CN202222303268U CN217901064U CN 217901064 U CN217901064 U CN 217901064U CN 202222303268 U CN202222303268 U CN 202222303268U CN 217901064 U CN217901064 U CN 217901064U
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Abstract
The utility model relates to a pressure sensor technical field discloses a multilayer structure's pressure sensor, including folding in proper order and establishing: the first glass layer is provided with pressure holes; the pressure-sensitive film is formed in the area, opposite to the pressure cavity, of the silicon substrate, and the pressure-sensitive resistor and the electric connection layer which are electrically connected are arranged on the silicon substrate; an insulating layer formed on the silicon substrate; a silicon bonding layer formed on the insulating layer; and the second glass layer, the silicon bonding layer and the insulating layer form a vacuum cavity in an enclosing manner, and the second glass layer is provided with a conductive assembly. The utility model discloses a multilayer structure's pressure sensor, simple structure, insulating layer play the effect of protection pressure sensitive resistance and electric linkage, and silicon bonding layer is used for bonding second glass layer, and first glass layer and second glass layer can promote this multilayer structure's pressure sensor's structural strength, need not to carry out liquid packaging technology, have reduced production pressure sensor's the degree of difficulty, have promoted pressure sensor's yield.
Description
Technical Field
The utility model relates to a pressure sensor technical field especially relates to a multilayer structure's pressure sensor.
Background
The existing pressure sensor comprises a liquid cavity and a pressure transmitter, wherein liquid such as oil or water is packaged in the liquid cavity, and the pressure transmitter is used for detecting the pressure of the liquid in the liquid cavity. When the pressure sensor is under the external pressure, the liquid is under the same acting force, and the liquid pressure detected by the pressure transmitter is the external pressure. The pressure sensor is internally packaged with liquid, so that the packaging process is complex, the liquid is possibly leaked if the sealing is incomplete, the pressure sensor fails, the dynamic characteristic of the pressure sensor is reduced, and the response time is prolonged.
SUMMERY OF THE UTILITY MODEL
Based on above, an object of the utility model is to provide a multilayer structure's pressure sensor, simple structure does not contain liquid in it, adds man-hour and need not to carry out liquid packaging technology, and the yield is high, but this pressure sensor direct measurement external pressure, and response time is short.
In order to achieve the purpose, the utility model adopts the following technical proposal:
a pressure sensor with a multilayer structure comprises: the first glass layer is provided with pressure holes which penetrate through the first glass layer along the thickness direction; the silicon substrate is provided with a pressure cavity opposite to the pressure hole, a pressure sensing diaphragm is formed in the area of the silicon substrate opposite to the pressure cavity, and one side of the silicon substrate, which is far away from the first glass, is provided with a pressure sensitive resistor and an electric connection layer which are electrically connected; an insulating layer formed on the silicon substrate; a silicon bonding layer formed on the insulating layer; and the second glass layer, the silicon bonding layer and the insulating layer form a vacuum cavity in a surrounding manner, a conductive component is arranged on the second glass layer, one end of the conductive component is electrically connected with the electric connection layer, and the other end of the conductive component is convexly arranged on the second glass layer.
As a preferable scheme of the pressure sensor having the multilayer structure, the conductive member includes a conductive member and a conductive boss, the conductive member is electrically connected to the electrical connection layer and penetrates through the second glass layer in the thickness direction, and the conductive boss is disposed on the outer side of the second glass layer.
As a preferable scheme of the pressure sensor having a multilayer structure, the conductive member includes a first sub-conductive member and a second sub-conductive member sequentially arranged in a thickness direction of the second glass layer, a diameter of the first sub-conductive member increases and decreases along a length direction thereof, a diameter of the second sub-conductive member increases and decreases along the length direction thereof, and a maximum diameter of the first sub-conductive member is larger than a maximum diameter of the second sub-conductive member.
As a preferable aspect of the pressure sensor having a multilayer structure, the pressure sensor further includes a metal PAD penetrating through the insulating layer and the silicon bonding layer and electrically connected to the conductive member and the electrical connection layer, respectively.
As a preferred scheme of the pressure sensor with the multilayer structure, an isolation groove is arranged on the silicon bonding layer, the isolation groove divides the silicon bonding layer into an isolation silicon ring and an outer ring silicon layer which are not in contact with each other, and the isolation silicon ring surrounds the metal PAD.
As a preferable mode of the pressure sensor of the multilayer structure, the pressure hole is a circular hole, the pressure chamber is a circular groove, and the diameter of the pressure hole is smaller than that of the pressure chamber.
As a preferred scheme of the pressure sensor with the multilayer structure, the area of the silicon bonding layer, which is over against the vacuum cavity, is provided with an avoidance hole.
As a preferable mode of the pressure sensor of the multilayer structure, the pressure sensitive resistor is arranged opposite to the edge of the pressure chamber.
As a preferable embodiment of the pressure sensor having a multilayer structure, the number of the pressure sensitive resistors is four, and the four pressure sensitive resistors are connected to form a wheatstone bridge through the electrical connection layer.
In a preferable embodiment of the pressure sensor having a multilayer structure, the insulating layer includes at least one of a silicon oxide layer, an aluminum oxide layer, and a silicon nitride layer.
The utility model has the advantages that:
the utility model discloses a multilayer structure's pressure sensor, moreover, the steam generator is simple in structure, the insulating layer plays the effect of protection pressure sensitive resistance and electric linkage, silicon bonding layer is used for bonding second glass layer, first glass layer and second glass layer can promote this multilayer structure's pressure sensor's structural strength, when external pressure is used in the pressure chamber, thereby pressure sensitive resistance passes through pressure chamber receiving pressure and produces deformation, make pressure sensitive resistance's resistivity change, form the signal of telecommunication, thereby the signal of telecommunication of output, this signal of telecommunication passes through conductive component and exports to external circuit, realize the detection to external pressure, response time is short, because do not contain liquid in this pressure sensor, need not to carry out liquid packaging technology, the degree of difficulty of producing pressure sensor has been reduced, pressure sensor's yield has been promoted.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required to be used in the description of the embodiments of the present invention will be briefly described below, and it is obvious that the drawings in the description below are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the contents of the embodiments of the present invention and the drawings without creative efforts.
Fig. 1 is a cross-sectional view of a pressure sensor having a multi-layer structure according to an embodiment of the present invention;
fig. 2 is a schematic diagram of wheatstone bridge connection of the pressure sensor with a multilayer structure according to an embodiment of the present invention.
In the figure:
1. a first glass layer; 10. a pressure port;
2. a silicon substrate; 21. a pressure-sensitive film; 22. a pressure sensitive resistor; 23. an electrical connection layer; 201. a pressure chamber; 202. a first surface; 203. a second surface;
3. an insulating layer; 31. a metal PAD;
4. a silicon bonding layer; 401. avoiding holes; 402. an isolation trench; 41. isolating the silicon ring; 42. an outer ring silicon layer;
5. a second glass layer; 50. a vacuum chamber; 51. a conductive component; 511. a conductive member; 5111. a first sub-conductive member; 5112. a second sub-conductive member; 512. a conductive boss.
Detailed Description
In order to make the technical problems, technical solutions and technical effects achieved by the present invention more clear, the embodiments of the present invention will be described in further detail with reference to the accompanying drawings, and obviously, the described embodiments are only some embodiments, not all embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by those skilled in the art without creative efforts belong to the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. Wherein the terms "first position" and "second position" are two different positions.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection or a removable connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood as a specific case by those skilled in the art.
The embodiment provides a pressure sensor with a multilayer structure, as shown in fig. 1, including a first glass layer 1, a silicon substrate 2, an insulating layer 3, a silicon bonding layer 4 and a second glass layer 5 stacked in sequence, a pressure hole 10 penetrating the first glass layer 1 along the thickness direction is provided, a pressure chamber 201 facing the pressure hole 10 is provided on the silicon substrate 2, a pressure sensing diaphragm 21 is formed in a region facing the pressure chamber 201 of the silicon substrate 2, a pressure sensitive resistor 22 and an electrical connection layer 23 electrically connected with each other are provided on one side of the silicon substrate 2 facing away from the first glass, the electrical connection layer 23 is a lead layer, the insulating layer 3 is formed on the silicon substrate 2, the silicon bonding layer 4 is formed on the insulating layer 3, a vacuum chamber 50 is enclosed by the second glass layer 5, the silicon bonding layer 4 and the insulating layer 3, a conductive assembly 51 is provided on the second glass layer 5, one end of the conductive assembly 51 is electrically connected with the electrical connection layer 23, and the other end is convexly provided on the second glass layer 5. In other embodiments, the electrical connection layer 23 may also be an ohmic contact layer formed on the pressure-sensitive resistor 22.
As shown in fig. 1, the pressure sensitive resistor 22 of the present embodiment is disposed opposite to the edge of the pressure chamber 201, so that the pressure sensitive resistor 22 is located at the position where the stress of the pressure sensing diaphragm 21 is maximum, thereby improving the sensitivity of the pressure sensor as much as possible. The number of the pressure sensitive resistors 22 in this embodiment is four, and the four pressure sensitive resistors 22 are connected by the electrical connection layer 23 to form a wheatstone bridge, as shown in fig. 2.
The pressure sensor with the multilayer structure provided by the embodiment, the structure is simple, the insulating layer 3 plays a role in protecting the pressure sensitive resistor 22 and the electric connection layer 23, the silicon bonding layer 4 is used for bonding the second glass layer 5, the structural strength of the pressure sensor with the multilayer structure can be improved by the first glass layer 1 and the second glass layer 5, when external pressure acts on the pressure cavity 201, the pressure sensitive resistor 22 receives pressure through the pressure cavity 201 to deform, the resistivity of the pressure sensitive resistor 22 changes, an electric signal is formed, the electric signal is output and output to an external circuit through the conductive component 51, detection of external pressure is achieved, the response time is short, liquid is not contained in the pressure sensor, a liquid packaging process is not needed, the difficulty in producing the pressure sensor is reduced, and the yield of the pressure sensor is improved.
When an external pressure acts on the pressure chamber 201, the pressure sensitive resistor 22 receives the pressure through the pressure chamber 201, so as to deform, so that the resistivity of the pressure sensitive resistor 22 changes, and an electrical signal is generated, for example, the deformation of the pressure sensitive resistor 22 makes the wheatstone bridge formed by the pressure sensitive resistor 22 unbalanced, so as to output an electrical signal, and the electrical signal is output to an external circuit through the electrical connection layer 23 and the conductive component 51.
Specifically, as shown in fig. 1, the conductive element 51 of the present embodiment includes a conductive member 511 and a conductive pad 512 electrically connected to each other, the conductive pad 512 is a solder ball, the conductive member 511 is electrically connected to the electrical connection layer 23 and disposed through the second glass layer 5 along the thickness direction thereof, and the conductive pad 512 is disposed outside the second glass layer 5. As shown in fig. 1, the conductive member 511 includes a first sub-conductive member 5111 and a second sub-conductive member 5112 sequentially arranged in the thickness direction of the second glass layer 5, the diameter of the first sub-conductive member 5111 increases and then decreases along the length direction thereof, the diameter of the second sub-conductive member 5112 increases and then decreases along the length direction thereof, and the maximum diameter of the first sub-conductive member 5111 is greater than the maximum diameter of the second sub-conductive member 5112. In other embodiments, the conductive bump 512 may have other shapes, and is specifically configured according to actual needs. The conductive member 511 is made of glass paste or conductive medium such as copper.
As shown in fig. 1, the pressure sensor of the multilayer structure of the present embodiment further includes a metal PAD 31, and the metal PAD 31 penetrates the insulating layer 3 and the silicon bonding layer 4 and is electrically connected to the conductive member 511 and the electrical connection layer 23, respectively. The material of the metal PAD 31 in this embodiment is a metal, preferably at least one of Al, ti, au, cu, and Pt, and the metal PAD 31 may be a circle or other shapes, which is not particularly limited in this embodiment and is specifically selected according to the actual use situation. In order to prevent the silicon bonding layer 4 from being charged due to the contact between the outer wall of the metal PAD 31 and the inner wall of the silicon bonding layer 4, a gap is left between the metal PAD 31 and the silicon bonding layer 4 in the present embodiment.
The side wall of the pressure cavity 201 of the embodiment extends along the thickness direction of the SOI substrate, the pressure cavity 201 is formed by dry etching, the pressure hole 10 on the first glass layer 1 is a circular hole, the pressure cavity 201 is a circular groove, and the diameter of the pressure hole 10 is smaller than that of the pressure cavity 201 of the SOI substrate, so that the first glass layer 1 can better protect the SOI substrate, the possibility of damaging the SOI substrate is reduced, and the service life of the SOI substrate is prolonged. In other embodiments, the diameter of the pressure hole 10 on the first glass layer 1 may also be equal to the diameter of the pressure chamber 201, and the pressure hole 10 is distributed coaxially with the pressure chamber 201. In other embodiments, the pressure chamber 201 may also be formed by wet etching, where a side wall of the pressure chamber 201 forms an included angle with the thickness direction of the SOI substrate, and the diameter of the pressure chamber 201 gradually decreases along the direction in which the depth of the pressure chamber 201 increases, and the diameter of the pressure hole 10 in the first glass layer 1 is smaller than or equal to the maximum diameter of the pressure chamber 201 of the SOI substrate.
As shown in fig. 1, the area of the silicon bonding layer 4 facing the vacuum chamber 50 is provided with an avoiding hole 401. Because the structural strength of the silicon bonding layer 4 is large, the silicon bonding layer 4 which is just opposite to the vacuum cavity 50 is removed, so that the influence of the silicon bonding layer 4 on the pressure sensing film 21 can be avoided, the deformation of the pressure sensing film 21 is ensured, and the precision of the pressure sensor is improved.
The insulating layer 3 of the present embodiment is a silicon oxide layer, and the insulating layer 3 is formed on the silicon substrate 2. In other embodiments, the insulating layer 3 may also be a single-layer structure such as a silicon nitride layer or an aluminum oxide layer, or at least two-layer structure formed by insulating materials such as silicon oxide, silicon nitride, or aluminum oxide, which is specifically selected according to actual needs.
As shown in fig. 1, an isolation groove 402 is further disposed on the silicon bonding layer 4 of this embodiment, the isolation groove 402 divides the silicon bonding layer 4 into an isolation silicon ring 41 and an outer ring silicon layer 42 which are not in contact with each other, and the isolation silicon ring 41 is disposed around the metal PAD 31. Even if the metal PAD 31 or the conductive member 511 contacts the isolation silicon ring 41 on the inner ring of the silicon bonding layer 4, the isolation silicon ring 41 does not contact the outer ring silicon layer 42, and the outer ring silicon layer 42 on the outer ring of the silicon bonding layer 4 is not electrified, so that the safety of the pressure sensor with the multilayer structure is improved.
Specifically, the pressure sensor with a multilayer structure of the present embodiment is manufactured by the following method:
s1, providing a silicon substrate 2;
s2, forming a first photoresist layer on the first surface 202 of the silicon substrate 2;
s3, patterning the first photoresist layer for the first time to form a first opening region, injecting light boron on the silicon substrate 2 in the first opening region by taking the first photoresist layer as a mask to form the pressure sensitive resistor 22, removing the patterned first photoresist layer, and forming the first photoresist layer on the first surface 202 again;
s4, patterning the first photoresist layer for the second time to form a second opening region, injecting dense boron into the silicon substrate 2 in the second opening region by taking the first photoresist layer as a mask to form a lead layer, and removing the patterned first photoresist layer;
s5, forming an insulating layer 3 on the first surface 202 of the silicon substrate 2, the pressure sensitive resistor 22 and the lead layer;
s6, forming a silicon bonding layer 4 on one side of the insulating layer 3, which is far away from the silicon substrate 2;
s7, forming a second photoresist layer on a second surface 203, opposite to the first surface 202, of the silicon substrate 2;
s8, patterning the second photoresist layer to form a third opening area;
s9, etching part of silicon of the silicon substrate 2 corresponding to the third opening area by deep silicon to form a pressure cavity 201, wherein the depth of the pressure cavity 201 is smaller than the thickness of the silicon substrate 2, and then removing the patterned second photoresist layer;
s10, forming a third photoresist layer on the silicon bonding layer 4;
s11, patterning the third photoresist layer for the first time to form a fourth opening area facing the vacuum cavity 50 and a closed annular groove;
s12, etching the silicon bonding layer 4 to form an avoiding hole 401 facing the fourth opening area and an isolating groove 402 facing the annular groove, dividing the silicon bonding layer 4 into an isolating silicon ring 41 and an outer ring silicon layer 42 which are not in contact with each other, and finally removing the patterned third photoresist layer;
s13, forming a third photoresist layer on the silicon bonding layer 4;
s14, patterning the third photoresist layer to form a first contact hole opposite to the electric connection layer 23, wherein the first contact hole is opposite to the isolation silicon ring 41;
s15, etching the isolation silicon ring 41 by adopting a silicon etching process to form a second contact hole opposite to the first contact hole;
s16, etching the insulating layer 3 by adopting an RIE etching process to form a third contact hole opposite to the second contact hole;
s17, manufacturing a metal PAD 31 electrically connected with the lead layer in the first contact hole, the second contact hole and the third contact hole, and finally removing the patterned third photoresist layer;
s18, anodically bonding a first glass layer 1 on the second surface 203, wherein a pressure hole 10 opposite to the pressure cavity 201 is formed in the first glass layer 1;
s19, a second glass layer 5 is bonded on the side, away from the insulating layer 3, of the silicon bonding layer 4 in an anodic mode, the second glass layer 5, the silicon bonding layer 4 and the insulating layer 3 form a vacuum cavity 50 opposite to the pressure cavity 201, and a first conductive groove and a second conductive groove are formed in the second glass layer 5;
s20, injecting a conductive material into the first conductive groove and the second conductive groove to form a conductive member 511 of the conductive component 51 contacting the metal PAD 31;
and S21, forming a conductive boss 512 contacted with the conductive piece 511 on one side of the second glass layer 5, which is far away from the silicon bonding layer 4, wherein the conductive boss 512 is convexly arranged on the second glass layer 5.
It should be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles applied thereto. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail with reference to the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the scope of the present invention.
Claims (10)
1. The utility model provides a multilayer structure's pressure sensor which characterized in that, includes to fold in proper order and establishes:
the first glass layer is provided with pressure holes which penetrate through the first glass layer along the thickness direction;
the silicon substrate is provided with a pressure cavity opposite to the pressure hole, a pressure sensing diaphragm is formed in the area of the silicon substrate opposite to the pressure cavity, and one side of the silicon substrate, which is far away from the first glass, is provided with a pressure sensitive resistor and an electric connection layer which are electrically connected;
an insulating layer formed on the silicon substrate;
a silicon bonding layer formed on the insulating layer;
and the second glass layer, the silicon bonding layer and the insulating layer form a vacuum cavity in a surrounding manner, a conductive component is arranged on the second glass layer, one end of the conductive component is electrically connected with the electric connection layer, and the other end of the conductive component is convexly arranged on the second glass layer.
2. The pressure sensor of claim 1, wherein the conductive element comprises a conductive member and a conductive pad electrically connected to each other, the conductive member is electrically connected to the electrical connection layer and disposed through the second glass layer in a thickness direction thereof, and the conductive pad is disposed outside the second glass layer.
3. The pressure sensor of claim 2, wherein the conductive member comprises a first sub-conductive member and a second sub-conductive member sequentially arranged along a thickness direction of the second glass layer, a diameter of the first sub-conductive member increases and decreases along a length direction thereof, a diameter of the second sub-conductive member increases and decreases along a length direction thereof, and a maximum diameter of the first sub-conductive member is greater than a maximum diameter of the second sub-conductive member.
4. The multi-layered pressure sensor according to claim 2, further comprising a metal PAD penetrating the insulating layer and the silicon bonding layer and electrically connected to the conductive member and the electrical connection layer, respectively.
5. The pressure sensor of claim 4, wherein an isolation groove is formed on the silicon bonding layer, the isolation groove separates the silicon bonding layer into an isolation silicon ring and an outer silicon layer which are not in contact with each other, and the isolation silicon ring is disposed around the metal PAD.
6. The multi-layered pressure sensor according to claim 1, wherein the pressure hole is a circular hole, the pressure chamber is a circular groove, and the diameter of the pressure hole is smaller than the diameter of the pressure chamber.
7. The pressure sensor of claim 1, wherein the area of the silicon bonding layer facing the vacuum chamber is provided with an avoiding hole.
8. The multi-layered pressure sensor of claim 1, wherein the pressure sensitive resistor is disposed directly opposite an edge of the pressure chamber.
9. The pressure sensor of claim 1, wherein the number of the pressure sensitive resistors is four, and the four pressure sensitive resistors are connected by the electrical connection layer to form a wheatstone bridge.
10. The multi-layered pressure sensor according to claim 1, wherein the insulating layer comprises at least one of a silicon oxide layer, an aluminum oxide layer, and a silicon nitride layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202222303268.5U CN217901064U (en) | 2022-08-31 | 2022-08-31 | Pressure sensor with multilayer structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202222303268.5U CN217901064U (en) | 2022-08-31 | 2022-08-31 | Pressure sensor with multilayer structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117246973A (en) * | 2023-11-17 | 2023-12-19 | 苏州敏芯微电子技术股份有限公司 | Micro-electromechanical force sensor and preparation method thereof |
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2022
- 2022-08-31 CN CN202222303268.5U patent/CN217901064U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117246973A (en) * | 2023-11-17 | 2023-12-19 | 苏州敏芯微电子技术股份有限公司 | Micro-electromechanical force sensor and preparation method thereof |
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