CN217895797U

CN217895797U - Air inlet device of semiconductor process chamber and semiconductor process equipment

Info

Publication number: CN217895797U
Application number: CN202221324605.2U
Authority: CN
Inventors: 李轩
Original assignee: Beijing Naura Microelectronics Equipment Co Ltd
Current assignee: Beijing Naura Microelectronics Equipment Co Ltd
Priority date: 2022-05-30
Filing date: 2022-05-30
Publication date: 2022-11-25
Anticipated expiration: 2032-05-30

Abstract

The utility model discloses an air inlet unit and semiconductor process equipment of semiconductor process cavity, the device includes: the box body is provided with a first end face and a second end face which are opposite, a top wall, a bottom wall, a first side wall and a second side wall are arranged between the first end face and the second end face, the top wall extends along the length direction of the box body, the bottom wall is opposite to the top wall, the first side wall and the second side wall is opposite to the first side wall, and the first end face, the second end face, the top wall, the bottom wall, the first side wall and the second side wall are surrounded to form a uniform flow cavity of the box body; an air inlet through hole is formed in the first end face, and a plurality of air outlet through holes are formed in the second side wall; the flow homogenizing plate is arranged in the box body along the height direction of the box body and is connected with the top wall and the bottom wall, and a plurality of flow homogenizing through holes penetrating through the thickness of the flow homogenizing plate are formed in the flow homogenizing plate; the uniform flow plate divides the uniform flow cavity into a first buffer area and a second buffer area along the width direction of the box body, the air inlet through hole is communicated with the first buffer area, and the air outlet through hole is communicated with the second buffer area. The effective air quantity and the flow speed of the outlet of the air inlet box are increased.

Description

Air inlet device of semiconductor process chamber and semiconductor process equipment

Technical Field

The utility model relates to a semiconductor process equipment field, more specifically relates to an air inlet unit and semiconductor process equipment of semiconductor process cavity.

Background

The chemical vapor deposition epitaxial growth is to convey reaction gas to a reaction chamber, react the reaction gas by heating and the like, grow atoms and deposit the atoms on a substrate, and grow a single crystal layer. During the process, the temperature field distribution inside the chamber, i.e. the heating mode and the heat dissipation, may affect the epitaxial growth. The uniformity of the generated thickness and the resistivity after doping is an important index of an epitaxial process, and the temperature distribution in the chamber is one of important factors influencing the uniformity of the resistivity.

Excessive temperature gradients on the surfaces of the graphite tray and the wafer can cause slip lines and the like on chips or sheets during the process. 4. The 6 and 8 inch silicon epitaxial process is an epitaxial process applied to a power device chip production line, chemical vapor deposition is carried out by introducing reaction gas into a process chamber, and process doping is carried out by introducing doping gas, so that an epitaxial layer with resistivity is grown on the surface of a wafer. The reaction temperature of the silicon epitaxial process is about 1100 ℃, and the temperature gradient of the surface of the wafer is not easy to be overlarge. In addition, the interior of the process chamber needs to have strong heat-insulating capacity so as to prevent the high-temperature wafer from excessively dissipating heat. Therefore, the fact that the temperature distribution of the inner wall surface of the chamber is uniform in a steady-state process is an important index for guaranteeing the stability of the process result and the improvement of the productivity.

The existing multi-piece epitaxial equipment is machine equipment suitable for preparing 4, 6 and 8 inch silicon wafer epitaxial processes, and an induction coil is adopted as a heating mode in the equipment. The whole size of the cavity is large, the number of prepared silicon wafers is large, and the equipment is different from single-wafer epitaxial equipment and has higher process requirements on the whole heat preservation of the cavity.

This multi-disc epitaxy equipment adopts air-cooled combination water cooling system to cool down the cavity upper surface at present, and the box of intaking that the air cooling system of this board cavity adopted at present admits air for four districts, the carminative mode of four districts, discovers in the production process, and this air intake box exists that the export gas velocity of flow is slower, effective amount of wind is few and inhomogeneous, leads to air cooling system's heat transfer ability relatively poor, and the process chamber gilding surface temperature is too high, easily produces and falls the gold, and then destroys the homogeneity of the indoor temperature field of process chamber, influences technological effect.

The information disclosed in this background section of the invention is only for enhancement of understanding of the general background of the invention and should not be taken as an acknowledgement or any form of suggestion that this information constitutes prior art already known to a person skilled in the art.

SUMMERY OF THE UTILITY MODEL

The utility model aims at providing an air inlet unit and semiconductor process equipment of semiconductor process cavity realizes increasing the effective amount of wind and the velocity of flow of air inlet unit export, promotes the holistic volume of airing exhaust of air-cooled system and strengthens the forced convection heat transfer ability of air-cooled system to gilding cavity surface with this.

In a first aspect, the utility model provides an air inlet device of semiconductor process cavity, include:

the box body is provided with a first end face and a second end face which are opposite, a top wall extending along the length direction of the box body, a bottom wall opposite to the top wall, a first side wall and a second side wall opposite to the first side wall are arranged between the first end face and the second end face, and the first end face, the second end face, the top wall, the bottom wall, the first side wall and the second side wall are surrounded to form a uniform flow cavity of the box body; an air inlet through hole is formed in the first end face, and a plurality of air outlet through holes are formed in the second side wall;

the flow equalizing plate is arranged in the box body along the height direction of the box body and is connected with the top wall and the bottom wall, and a plurality of flow equalizing through holes penetrating through the thickness of the flow equalizing plate are formed in the flow equalizing plate; the uniform flow plate divides the uniform flow cavity into a first buffer area and a second buffer area along the width direction of the box body, wherein the first buffer area is close to the first side wall, the second buffer area is close to the second side wall, the air inlet through hole is communicated with the first buffer area, and the air outlet through hole is communicated with the second buffer area.

Optionally, the area of the cross section of the air inlet through hole along the length direction of the box body is gradually reduced.

Optionally, the inner walls of the air inlet through hole include a first inner wall surface close to the top wall, a second inner wall surface close to the bottom wall, a third inner wall surface close to the first side wall, and a fourth inner wall surface close to the second side wall;

the first inner wall surface, the second inner wall surface and the fourth inner wall surface all extend along the length direction of the box body to the direction close to the central shaft of the air inlet through hole, and the fourth inner wall surface is connected with one end of the uniform flow plate.

Optionally, a distance between the first side wall and the flow equalizing plate is greater than a distance between the flow equalizing plate and the second side wall.

Optionally, the plurality of uniform flow through holes are linearly arranged on the uniform flow plate along the length direction of the box body;

the air outlet through holes are arranged on the second side wall along the height direction of the box body in a multi-layer mode, and the air outlet holes on each layer are arranged in a straight line along the length direction of the box body.

Optionally, the aperture of the uniform flow through hole is larger than that of the air outlet through hole.

Optionally, the aperture of the uniform flow through hole is the same as the total height of the air outlet through holes in multiple layers in the height direction of the box body.

Optionally, the air outlet through hole is a taper hole, and the diameter of the taper hole gradually increases along the width direction of the box body.

Optionally, a junction of the first side wall and the second end face is an arc transition face.

In a second aspect, the present invention provides a semiconductor processing apparatus, including process chamber and the first aspect air inlet device, air inlet device set up in on the process chamber, be used for to process chamber provides even cooling air flow.

The beneficial effects of the utility model reside in that:

through set up the uniform flow board in the box body, the uniform flow board separates the inner chamber of box body for first buffer zone and second buffer zone along the width direction of box body, first buffer zone is direct and is located the direct intercommunication of the air inlet through-hole of the first terminal surface of box body, gaseous entering can first cushion in first buffer zone after the box body that admits air, then get into the second buffer zone through a plurality of uniform flow through-holes on the uniform flow board, a plurality of air-out through-holes on the second uniform flow board discharge, it can make the even gas effect of air inlet box better to carry out even gas through the uniform flow through-hole on the uniform flow board and the air-out through-hole on the second lateral wall, the air current that the air-out through-hole flows is more even, simultaneously because all adopt the through-hole design on uniform flow board and the second lateral wall, can increase the pressure drop of the air current that flows into the box body, increase the air current velocity of exhaust hole.

The apparatus of the present invention has other features and advantages which will be apparent from or are set forth in more detail in the accompanying drawings and the following detailed description, which are incorporated herein, and which together serve to explain certain principles of the invention.

Drawings

The above and other objects, features and advantages of the present invention will become more apparent by describing in more detail exemplary embodiments of the present invention with reference to the attached drawings, in which like reference numerals generally represent like parts.

Fig. 1 shows a top view of a process chamber of a conventional multi-wafer epitaxial apparatus.

Fig. 2 shows an axial view of a process chamber of a conventional multi-wafer epitaxial apparatus.

FIG. 3 is an axial view of an inlet box in an air cooling system of a process chamber of a conventional multi-piece epitaxial apparatus.

FIG. 4 is a front view of an inlet box in an air cooling system of a process chamber of a conventional multi-piece epitaxial apparatus.

FIG. 5 shows a cross-sectional view of an inlet box in an air cooling system of a process chamber of a conventional multi-piece epitaxial apparatus.

FIG. 6 is a front view of an air intake device of a semiconductor processing chamber of example 1.

Fig. 7 is a schematic view illustrating an air inlet structure of the first end surface of the air inlet device of the semiconductor process chamber according to embodiment 1.

FIG. 8 is a sectional view of the air intake device of the semiconductor processing chamber of example 1 in a top view.

FIG. 9 is a sectional view of the first buffer area of the semiconductor process chamber of example 1 showing the position of the air intake device in a front view.

FIG. 10 is a sectional view of the second buffer area of the semiconductor process chamber of example 1, showing the air intake device in a front view.

Fig. 11 shows an enlarged through-hole structure view at I in fig. 8.

Fig. 12 shows an enlarged view of the vent hole at II in fig. 8.

Fig. 13 shows a flow chart of an internal flow field of the conventional intake box.

FIG. 14 is a flow chart of a flow field inside an air intake device of a semiconductor process chamber in accordance with example 1.

FIG. 15 is a graph showing the comparison of the outlet air homogenizing effect of the air intake device of the semiconductor process chamber of the embodiment 1 and the existing air intake box.

Detailed Description

The surface of a quartz chamber of the existing multi-piece epitaxial equipment is of a gold-plated structure, the emissivity of a gold-plated surface is very low, the reflectivity of the surface of the chamber can be increased to more than 97% through processes of nickel plating, polishing, gold plating and the like, so that the heat preservation effect inside the chamber is improved, and meanwhile, an air cooling system and a water cooling system cool the outer surface of the chamber.

The assembly of the air cooling system currently used for multi-piece epitaxy equipment and the upper surface of a gold-plated chamber are shown in fig. 1 and 2, and the air cooling system comprises an air duct 2, two short air inlet boxes 1 and two long air outlet boxes 3. The four small boxes are respectively arranged at two sides of the top of the process chamber, gas enters the process chamber module from the air inlet 7 of the air duct 2, the air in the air duct 2 is discharged from the outlet of the air inlet box 1 after being homogenized in the two air inlet boxes 1, and the upper surface of the gold-plated chamber is swept and cooled in a four-zone exhaust mode. The gold-plated chamber upper surface consists of a water-cooled zone 4 and two cold zones 5, and is separated by two arc-shaped water-stop sheets 6. The water cooling area 4 is cooled by a water cooling system, two surfaces of the air cooling area 5 are cooled by air cooling discharged by the air inlet box, and meanwhile, gas taking away heat on the wall surface of the cavity is discharged to the atmosphere.

The overall schematic diagram and the internal structure of the air inlet box 1 are shown in fig. 3-5, the front surface of the air inlet box 1 is provided with four air outlets 9, one end of the air inlet box 1 is provided with four air inlets 8, and the air inlet box 1 of the air cooling system is divided into four areas after entering the air inlet box, and the four areas are in a four-area air inlet and four-area air exhaust mode. After entering the air inlet box, the gas is discharged in a four-zone exhaust mode after uniform flow inside the air inlet box and flows through the surface of the gold-plating chamber, and forced convection heat exchange is carried out on the surface of the gold-plating chamber.

The air inlet box of the existing air cooling system has the following defects:

1) The air cooling system air inlet box has the advantages that the air inlet box is internally bent at the bent position by using a right angle, so that air flowing in from an inlet of the air inlet box easily flows unevenly in the air inlet box, the speed distribution of the air in the air inlet box is uneven, and meanwhile, backflow and vortex are generated; the kinetic energy loss of the gas passing through the air inlet box is low after the gas flows inside the air inlet box, the effective air quantity is too low, the heat exchange capability of the air cooling system on the surface of the gold-plated cavity is poor, and the forced convection heat exchange coefficient is low;

2) After the inside of the air inlet box is divided into four areas, the flow velocity of the outlet face of the air inlet box is seriously uneven due to the fact that the cross section area of the outlet of each area is inconsistent, the flow velocity of gas flowing through the upper surface of the cavity is inconsistent, the quantity of heat exchanged on the upper surface of the cavity is inconsistent, the surface temperature distribution is uneven, local thermal stress is generated, and gold on the surface is dropped.

3) The large outlet cross-sectional area of the air outlet results in too low pressure drop at the air outlet, so that the flow rate of gas flowing out from the outlet of the air inlet box is low, the heat exchange capacity of the air cooling system is poor, the temperature of the gold-plated surface is further high, and gold is easily generated to fall (the phenomenon that the gold falls on the surface of the gold-plated cavity is mainly generated on the surface of the cavity corresponding to the short air inlet box).

4) When the operating time of the machine table reaches 7 months and 8 months, the gold falling phenomenon is serious on the upper surface of the chamber, so that the quartz surface is exposed in the air, the emissivity of the quartz is about 0.8 and is far higher than the low emissivity of the gold-plated surface. The reduced reflectivity of the gold-plated layer can damage the uniformity of the temperature field in the chamber, further influence the process result, lead the process result to fail to reach the use standard, and lead the graphite tray and the wafer to be cracked when the process result is serious. When gold is lost on the surface of the chamber, the cost of the equipment is increased by replacing the quartz chamber or plating gold on the surface of the quartz chamber, and the productivity of the equipment is seriously reduced by too long maintenance time;

the utility model provides an air inlet unit and semiconductor process equipment of semiconductor process cavity, optimize through the box body inner structure to air inlet unit, in the pressure-flow curve of guaranteeing inside flow resistance at the fan, increase the effective amount of wind in inside of air inlet unit box body, promote the holistic volume of airing exhaust of air cooling system and to the forced convection heat transfer ability on gilding cavity surface with this reinforcing air cooling system, avoid gilding cavity surface to fall gold to guarantee the homogeneity in cavity interior temperature field, improve process quality.

The invention will be described in more detail below with reference to the accompanying drawings. While the preferred embodiments of the present invention have been illustrated in the accompanying drawings, it is to be understood that the invention may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

Example 1

As shown in fig. 6-12, an air intake device 100 for a semiconductor process chamber comprises:

the box body 101 is provided with a first end face and a second end face which are opposite, a top wall extending along the length direction of the box body 101, a bottom wall opposite to the top wall, a first side wall and a second side wall opposite to the first side wall are arranged between the first end face and the second end face, and the first end face, the second end face, the top wall, the bottom wall, the first side wall and the second side wall are surrounded to form a uniform flow cavity of the box body; an air inlet through hole 103 is formed in the first end face, and a plurality of air outlet through holes 108 are formed in the second side wall;

the flow equalizing plate 102 is arranged in the box body 101 along the height direction of the box body 101 and is connected with the top wall and the bottom wall, and a plurality of flow equalizing through holes 107 penetrating through the flow equalizing plate 102 are formed in the flow equalizing plate 102; the uniform flow plate 102 divides the inner cavity of the box body 101 into a first buffer area 105 and a second buffer area 106 along the width direction of the box body 101, wherein the first buffer area 105 is close to the first side wall, the second buffer area 106 is close to the second side wall, the air inlet through hole is communicated with the first buffer area, and the air outlet through hole is communicated with the second buffer area.

As shown in fig. 7-9, in the present embodiment, the area of the cross section of the air inlet hole 103 along the length direction of the box 101 gradually decreases. Preferably, the section of the air inlet hole 103 along the direction perpendicular to the length direction of the box body 101 is rectangular.

The inner walls of the air inlet hole 103 include a first inner wall surface close to the top wall, a second inner wall surface close to the bottom wall, a third inner wall surface close to the first side wall, and a fourth inner wall surface close to the second side wall 104. Preferably, the first inner wall surface, the second inner wall surface, and the fourth inner wall surface all extend in a direction close to the central axis of the air inlet hole 103 along the length direction of the box 101, and the fourth inner wall surface is connected to one end of the uniform flow plate 102.

Specifically, the air inlet through holes of the box body 101 are changed from the original four-zone air inlet mode into a structure that the upper inner surface, the lower inner surface and the right inner surface (the side close to the exhaust gas) of the air inlet through holes 103 are in an inclined ascending mode, and the pressure drop at the air inlet through holes 103 is increased by changing the sectional area vertical to the air inlet direction, so that the flow velocity of air flow in the box body 101 is increased, and the effective air volume is increased; meanwhile, compared with the existing air inlet box, the air inlet baffle of the four divided areas is cancelled, so that the internal wind resistance is reduced, and the kinetic energy loss of the system is reduced.

As shown in fig. 10 and 11, in the present embodiment, a plurality of uniform flow through holes 107 are arranged in a straight line on the uniform flow plate 102 along the length direction of the box body 101; preferably, the number of the uniform flow through holes 107 on the uniform flow plate 102 is 10 to 20, and the diameter of the uniform flow through holes 107 is 12mm to 18mm.

As shown in fig. 6, 8 and 12, the plurality of air outlet through holes 108 are arranged in multiple layers on the second side wall 104 along the height direction of the box 101, and the plurality of air outlet through holes 108 in each layer are arranged in a straight line along the length direction of the box 101. Air-out through-hole 108 is the taper hole, and the diameter of taper hole increases gradually along the width direction of box body 101, and preferably, the quantity of the taper hole on the second lateral wall 104 is 60 to 78, and the taper hole is arranged and is divided into 3 to 4 layers, and the entry diameter of taper hole is 1mm to 2mm, and the export diameter of taper hole is 3mm to 5mm, and the tapering of taper hole is 1 to 12.

In this embodiment, the aperture of the uniform flow through hole 107 is larger than the aperture of the air outlet hole 108. The opening height of the uniform flow through hole 107 is the same as the total height of the multilayer air outlet through hole 108 in the height direction of the box body 101.

Specifically, the air outlet through hole 108 adopts a taper hole structure, which is easy for gas diffusion, and can enhance the flow uniformity of the gas at the air outlet of the air inlet box 100; meanwhile, the taper hole structure can also increase the pressure drop of the air outlet of the air inlet box 100, so that the gas flowing through the box body 101 can flow out of the box body at a higher speed, and the upper wall surface of the cavity is cooled quickly. In addition, in order to ensure the uniformity of the gas flowing back and forth through the uniform flow plate 102 and the second side wall 104, the opening height (diameter of the uniform flow through holes 107) of the uniform flow plate 102 should be as consistent as possible with the total opening height (number of conical hole arrangement layers × diameter of the conical holes) of the multiple rows of outlet through holes 108 on the second side wall 104.

As shown in fig. 8, the distance between the first side wall and the flow distribution plate 102 is greater than the distance between the flow distribution plate 102 and the second side wall 104.

Specifically, in order to make the air-distributing effect of the air intake device 100 better, the air is distributed in the box body 101 by adopting a double-layer air-distributing plate structure. After the gas enters the box body 101, the gas is buffered in the first buffer area 105, and the pressure drop change between the first buffer area 105 and the flow equalizing plate 102 determines the effect of the gas equalizing. The larger the volume of the first buffer area 105, the larger the pressure drop, and the better the gas-homogenizing effect for the flow-homogenizing plate 102. Therefore, the width of the first buffer area 105 (the distance between the first side wall and the flow distribution plate 102) is set to be as large as possible than the width of the second buffer area 106 (the distance between the flow distribution plate 102 and the second side wall 104), so as to increase the pressure drop of the first uniform flow. Preferably, the distance between the flow distribution plate 102 and the first side wall is 20mm to 30mm, and the distance between the flow distribution plate 102 and the second side wall 104 is 13mm to 16mm.

Meanwhile, the air outlet through hole 108 of the taper hole structure on the second sidewall 104 has a smaller diameter and a larger pressure drop, so the volume of the second buffer area 106 does not need to be large. Meanwhile, in order to ensure that the flow resistance generated when the air flow passes through the uniform flow plate 102 to perform the first layer of uniform air distribution is not too large, so that the inlet pressure is too high, the uniform flow through hole 107 with a large aperture on the uniform flow plate 102 is firstly used for performing the first uniform air distribution, and after the air enters the second buffer area 106, the tapered hole structure with a small aperture is used for performing the second uniform air distribution, so that the uniform flow rate of the air flowing out of the air outlet through hole 108 is ensured, and the cooling uniformity is stronger.

As shown in fig. 8, the junction of the first sidewall and the second end face is an arc-shaped transition surface 109.

Specifically, the arc-shaped transition surface 109 is adopted at the bending part (the connection part of the first side wall and the second end surface) of the first buffer area 105, so that kinetic energy loss of the cavity flowing into the first buffer area from the air inlet through hole 103 is smaller when the cavity changes direction with the body, the flowing is more uniform, backflow and vortex are avoided, and effective air volume is increased.

Fig. 13 is a flow chart of an internal flow field of the conventional intake box structure, and fig. 14 is a flow chart of the internal flow field of the intake device 100 according to this embodiment, as can be seen from fig. 13, the internal flow field of the conventional intake box is unevenly distributed, and the phenomena of backflow, vortex and the like occur at the outlet, which results in low wind speed and poor uniformity at the outlet. As shown in fig. 14, after the air intake device 100 of the present embodiment is adopted, it can be clearly seen through simulation calculation and analysis that the internal flow distribution is more uniform and reasonable, and there are no areas of obvious backflow and turbulence.

Fig. 15 is a speed-sampling point curve obtained by sampling 50 points of the air intake device 100 and the existing air intake box structure to calculate the average flow speed in the process after simulation. In the air flow simulation analysis, the uniform flow plate 102 adopts the uniform flow through holes 107 with the diameter of 10 × 14mm, and the air outlet through holes 108 on the second side wall 104 adopt taper holes with the diameter of 1mm-5mm and the taper of 1.

As shown in fig. 15, under the existing air intake box structure, the average flow velocity of the air outlet of the air intake box is about 20m/s, and the standard deviation represents that the uniformity is 5.9, and under the novel air intake device structure of this embodiment, the average flow velocity of the air outlet of the air intake device 100 is 60m/s, and the standard deviation is 3.8. Can obviously quantify after calculating the analysis through the simulation and compare in current air inlet box structure, the novel air inlet box structure of this embodiment is 200% to the promotion of export flow velocity, and is 55% to the promotion of flow uniformity. After the novel air inlet device of the embodiment is used, the flow uniformity and the flow speed of air flow in the air cooling system are obviously improved.

After the air outlet (namely air outlet through hole) velocity of flow of air inlet device 100 promoted, carried out the simulation analysis in its flow field to wall on air cooling system and the cavity, in the emulation aftertreatment with the whole of gilding cavity upper wall by heat transfer energy (w/m 2) and the average velocity of flow that flows through gilding cavity surface as the target value contrast original air inlet box structure with the utility model discloses an air inlet device 100 performance in air cooling system. The specific results are shown in Table 1.

Table 1: this device and current air inlet box structure contrast air cooling system effect

It can be seen that, under the novel air intake device structure provided by the embodiment, the heat exchange capacity of the air cooling system on the upper wall surface of the cavity is 23000w/m2, which is 21% higher than that of the existing air intake box structure (19000 w/m 2); the average flow rate of gas flowing through the upper wall of the chamber was increased by 99.92%. Just under this novel hot blast blowpipe apparatus structure, the air cooling system has obvious promotion to the whole cooling homogeneity of wall on the cavity, and falls the serious region of golden phenomenon to the cavity surface, and the cooling capacity of air cooling system is obviously stronger under the condition of the hot blast blowpipe apparatus 100 of this embodiment of adoption.

Example 2

A semiconductor processing apparatus, comprising: the air inlet device 100 is arranged on the process chamber and used for providing uniform cooling air flow for the process chamber.

Specifically, an air cooling system is arranged on the process chamber of the embodiment;

the air cooling system comprises an air duct box, a first air inlet box, a second air inlet box, a third air inlet box and a fourth air inlet box; the first air inlet box and the third air inlet box are arranged on one side of the upper surface of the cavity body, the fourth air inlet box of the second air inlet box is arranged on the other side of the upper surface of the cavity body, the first air inlet box and the second air inlet box are arranged oppositely, and the third air inlet box and the fourth air inlet box are arranged oppositely; one end of the air channel box is communicated with the air inlet through holes of the first air inlet box and the third air inlet box, the other end of the air channel box is communicated with the air inlet through holes of the second air inlet box and the fourth air inlet box, and an air channel inlet is formed in the air channel box;

the first air inlet box, the second air inlet box, the third air inlet box and the fourth air inlet box are the air inlet device 100 of the semiconductor process chamber in embodiment 1.

The semiconductor processing equipment of this embodiment is multi-wafer epitaxy equipment, and the process chamber is the quartz chamber, and the air inlet device 100 of application embodiment 1 can effectively improve the cooling capacity of the air cooling system, avoids the gold falling on the surface of the chamber, and ensures the uniformity of the temperature field in the chamber, thereby improving the quality of the epitaxy process.

While various embodiments of the present invention have been described above, the above description is intended to be illustrative, not exhaustive, and not limited to the disclosed embodiments. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments.

Claims

1. An air inlet device of a semiconductor process chamber, comprising:

2. The intake device of the semiconductor process chamber, according to claim 1, wherein the intake through hole has a cross-sectional area gradually decreasing along the length direction of the box body.

3. The intake arrangement of the semiconductor processing chamber of claim 2, wherein the inner walls of the intake vent include a first inner wall surface adjacent the top wall, a second inner wall surface adjacent the bottom wall, a third inner wall surface adjacent the first sidewall, and a fourth inner wall surface adjacent the second sidewall;

4. The apparatus of claim 1, wherein a distance between the first sidewall and the flow distribution plate is greater than a distance between the flow distribution plate and the second sidewall.

5. The apparatus of claim 1, wherein the plurality of flow-equalizing through holes are linearly arranged on the flow-equalizing plate along a length of the box;

6. The air intake device of the semiconductor process chamber of claim 5, wherein the diameter of the uniform flow through holes is larger than the diameter of the air outlet through holes.

7. The intake device of the semiconductor process chamber as claimed in claim 6, wherein the aperture of the uniform flow through hole is the same as the total height of the plurality of layers of the outlet through holes in the height direction of the box body.

8. The intake device of the semiconductor process chamber according to any one of claims 1 to 7, wherein the outlet vent is a tapered hole, and the diameter of the tapered hole gradually increases along the width direction of the box body.

9. The intake assembly of claim 1, wherein the junction of the first sidewall and the second end surface is an arcuate transition surface.

10. Semiconductor processing equipment, comprising a process chamber and the air inlet device as claimed in any one of claims 1 to 9, wherein the air inlet device is arranged on the process chamber and used for providing uniform cooling air flow for the process chamber.