CN217881430U - Quartz boat - Google Patents

Abstract

The utility model discloses a quartz boat, including last monolithic region, lower monolithic region and biplate region, the biplate region is located monolithic region and between the monolithic region down, goes up monolithic region and monolithic region down and loads the monolithic silicon chip, and the biplate region loads the biplate silicon chip, the utility model discloses a monolithic region loads the monolithic silicon chip with lower monolithic region on the quartz boat, and the biplate region loads the biplate silicon chip, and when the diffusion, the biplate silicon chip adopts single face diffusion, the two-sided diffusion of monolithic silicon chip. One surface of the upper single chip area and one surface of the lower single chip area, which faces the double chip area, of the loaded silicon wafer are diffusion surfaces, and one surface of the loaded silicon wafer, which does not face the double chip area, of the loaded silicon wafer is a non-diffusion surface. One surface of the silicon wafer, which is not towards the double-wafer area, is completely removed through an etching process after diffusion, so that a non-diffusion surface is formed, and the influence of low sheet resistance caused by the fact that the surface is close to a thermal field is eliminated.

Description

Quartz boat

Technical Field

The utility model belongs to the photovoltaic equipment field relates to a quartz boat.

Background

With the development of the current silicon wafer market, large-size silicon wafers more meet the trend of the current market, but also present higher challenges to equipment, especially thermal processing equipment. The silicon wafers deform at high temperature, particularly 18Xmm or 210mm silicon wafers, after the size is further increased, the silicon wafers are heated and bent, and adjacent silicon wafers are even attached together, so that the diffusion uniformity of products is seriously influenced, the further improvement of the power generation efficiency of large-size products is further restricted, and the method for solving the problem is to adopt horizontal diffusion to replace vertical diffusion.

The diffusion uniformity is influenced by gas, the influence of temperature cannot be ignored, horizontal diffusion has the problem that the sheet resistance of upper and lower silicon wafers is low due to the fact that the heat radiation of an upper thermal field and a lower thermal field is blocked by the silicon wafers layer by layer, the temperature of the upper silicon wafer and the temperature of the middle silicon wafer are different, and particularly the sheet resistance of the upper silicon wafer and the lower silicon wafer close to the thermal field in the quartz boat is very low. At present, a scheme of loading dummy wafers or controlling the heat radiation power in a segmented mode by the thermal field power is adopted for improvement. The scheme of loading the dummy wafers increases the production cost, in addition, the dummy wafers need to be replaced regularly, and with the increase of the diffusion times, the effect of the dummy wafers is worse and worse after the source quantity on the dummy wafers reaches saturation; the scheme of thermal field power segment control can relieve the influence of thermal field heat radiation, but the cost of the thermal field needs to be increased, and the cost is higher when the thermal field is changed on the existing diffusion equipment.

Disclosure of Invention

The utility model provides a quartz boat for overcoming the defects of the prior art.

In order to achieve the above purpose, the utility model adopts the following technical scheme: a quartz boat, characterized in that: the silicon wafer stacking device comprises an upper single wafer region, a lower single wafer region and a double wafer region, wherein the double wafer region is located between the upper single wafer region and the lower single wafer region, single silicon wafers are loaded in the upper single wafer region and the lower single wafer region, and double silicon wafers are loaded in the double wafer region.

Furthermore, the quartz boat comprises a plurality of vertical rods in the vertical direction, the length direction of the vertical rods of the quartz boat is perpendicular to the axial direction of the quartz furnace tube, one surface of the upper single-chip region and one surface of the lower single-chip region, which are loaded with silicon wafers and face towards the double-chip region, are diffusion surfaces, and the other surface of the upper single-chip region and the lower single-chip region are non-diffusion surfaces.

Furthermore, a plurality of second slots are arranged on the vertical rod in the double-piece area, the second slots are distributed along the length direction of the vertical rod, and the second slots bear double-piece silicon wafers.

Furthermore, at least one first slot is arranged on a vertical rod in the upper single-chip area, the first slots are distributed along the length direction of the vertical rod, and the first slots bear the single-chip silicon wafers.

Furthermore, at least one third slot is arranged on a vertical rod in the lower single-chip area, the third slots are distributed along the length direction of the vertical rod, and the lower single-chip slot bears the single silicon chip.

Furthermore, the upper end and the lower end of the vertical rod are respectively and fixedly provided with an end plate.

Furthermore, the height of the second slot is larger than the height formed by the two silicon chips.

Further, the height of the first slot is larger than that of the single silicon chip.

Furthermore, the height of the third slot is larger than that of the single silicon chip.

Furthermore, the surfaces of the double-piece silicon pieces of the double-piece area are abutted.

To sum up, the utility model discloses an useful part lies in:

1) The utility model discloses need not change thermal field, the current structure of quartzy boiler tube, through loading the silicon chip at quartzy boat subregion, almost no hardware change cost.

2) The utility model discloses need not to load false piece in the upper and lower end of quartz boat, avoided false piece cracked through long-time use, the technical problem that needs to be changed.

3) The utility model discloses a monolithic region loads the monolithic silicon chip with lower monolithic region on the quartz boat, and the biplate region loads the biplate silicon chip, and when the diffusion, the biplate silicon chip adopts the single face diffusion, the two-sided diffusion of monolithic silicon chip. One surface of the upper single chip region and one surface of the lower single chip region, which faces the double chip region, of the loading silicon chip are diffusion surfaces, and the other surface of the loading silicon chip, which does not face the double chip region, of the loading silicon chip is a non-diffusion surface. One surface of the silicon wafer, which is not towards the double-wafer area, is completely removed through an etching process after diffusion, so that a non-diffusion surface is formed, and the influence of low sheet resistance caused by the fact that the surface is close to a thermal field is eliminated.

Drawings

FIG. 1 shows an embodiment of the quartz boat of the present invention for supporting silicon wafers.

FIG. 2 shows another embodiment of the quartz boat for supporting silicon wafers

The following are marked in the figure: the silicon wafer comprises an upper single-chip area 11, a first slot 110, a double-chip area 12, a second slot 120, a lower single-chip area 13, a third slot 130, a vertical rod 14, an end plate 15, a silicon wafer 2 and a quartz furnace tube 3.

Detailed Description

The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The present invention can also be implemented or applied through other different specific embodiments, and various details in the present specification can be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict.

It should be noted that the drawings provided in the following embodiments are only for illustrating the basic concept of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the form, amount and ratio of the components in actual implementation may be changed at will, and the layout of the components may be more complicated.

In the embodiments of the present invention, all directional indicators (such as up, down, left, right, front, rear, horizontal, vertical \8230;) are used only to explain the relative positional relationship between the components in a specific posture, the motion situation, etc., and if the specific posture is changed, the directional indicator is changed accordingly.

The first embodiment is as follows:

as shown in fig. 1, a quartz boat includes an upper single-wafer region 11, a lower single-wafer region 13, and a double-wafer region 12, wherein the double-wafer region 12 is located between the upper single-wafer region 11 and the lower single-wafer region 13, the upper single-wafer region 11 and the lower single-wafer region 13 are closer to a thermal field of a quartz furnace tube 3 than the double-wafer region 12, the upper single-wafer region 11 and the lower single-wafer region 13 are loaded with single-wafer silicon wafers 2, and the double-wafer region 12 is loaded with double-wafer silicon wafers 2.

The silicon wafers loaded in the upper single-wafer region 11 and the lower single-wafer region 13 have a diffusion surface on the side facing the double-wafer region 12, such as the b-surface shown in fig. 1 and 2, and a non-diffusion surface on the side not facing the double-wafer region 12, such as the a-surface shown in fig. 1 and 2. Wherein, one side of the silicon wafer which is not towards the double-wafer area 12 is completely removed through an etching process after diffusion or other similar processes, thereby forming a non-diffusion surface and eliminating the influence of low sheet resistance caused by the surface close to a thermal field.

The quartz boat includes a plurality of vertical rods 14 along vertical direction, and the upper and lower end of a plurality of vertical rods 14 has set firmly end plate 15 respectively, and vertical rod 14 constitutes the overall structure of quartz boat with end plate 15.

The length direction of the vertical rods 14 of the quartz boat is vertical or approximately vertical to the axial direction of the quartz furnace tube 3, the direction of the silicon wafer inserted into the quartz boat is parallel or approximately parallel to the horizontal diffusion direction of the airflow, according to the visual angle shown in fig. 1, the upper end and the lower end of the quartz boat are closer to the thermal field of the quartz furnace tube 3, the upper end of the quartz boat forms an upper single-chip area 11, the lower end of the quartz boat forms a lower single-chip area 13, the middle end of the quartz boat forms a double-chip area 12, the upper single-chip area 11 of the quartz boat is closer to the thermal field of the quartz furnace tube 3 than the double-chip area 12, and the double-chip area 12 is located between the upper single-chip area 11 and the lower single-chip area 13. The upper single-chip area 11, the lower single-chip area 13 and the double-chip area 12 constitute a silicon chip loading area of the whole quartz boat.

The position of the vertical rod 14 in the two-piece region 12 is provided with a plurality of second slots 120, the plurality of second slots 120 are distributed along the length direction of the vertical rod 14, the second slots 120 bear the two silicon pieces 2, and the height of the second slots 120 is greater than the height formed by the two groups of silicon pieces 2.

The vertical rod 14 is provided with a plurality of first slots 110 at a position located in the upper single-chip region 11, the plurality of first slots 110 are distributed along the length direction of the vertical rod 14, the first slots 110 bear the single-chip silicon wafers 2, the height of the first slots 110 is larger than that of the single-chip silicon wafers 2, at least one first slot 110 is arranged, as shown in fig. 2, preferably two first slots 110 are arranged, and compared with the arrangement of one first slot 110, the situation that the square resistance of the silicon wafers 2 in the double-chip region 12 is lower is further guaranteed, and meanwhile, the productivity of single-furnace silicon wafers is not affected.

The vertical bar 14 is provided with a plurality of third slots 130 at the lower single-piece region 13, the plurality of third slots 130 are distributed along the length direction of the vertical bar 14, the third slots 130 bear the single-piece silicon wafers 2, the height of the third slots 130 is greater than that of the single-piece silicon wafers 2, and the number of the third slots 130 is at least one, as shown in fig. 2, preferably two, for the same reason as that of the first slots 110.

In addition, the number of the first slot 110 and the third slot 130 may be further adjusted according to the actual situation.

The silicon wafer insertion method of the present embodiment is not limited to the horizontal diffusion method.

It is obvious that the described embodiments are only some of the embodiments of the present invention, and not all of them. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts shall belong to the protection scope of the present invention.

Claims (10)

1. A quartz boat, its characterized in that: the silicon wafer stacking device comprises an upper single-wafer region, a lower single-wafer region and a double-wafer region, wherein the double-wafer region is located between the upper single-wafer region and the lower single-wafer region, single silicon wafers are loaded in the upper single-wafer region and the lower single-wafer region, and double silicon wafers are loaded in the double-wafer region.

2. The quartz boat of claim 1, wherein: the quartz boat comprises a plurality of vertical rods in the vertical direction, the length direction of the vertical rods of the quartz boat is perpendicular to the axial direction of the quartz furnace tube, one surface, facing the double-wafer area, of the silicon wafer loaded in the upper single-wafer area and the lower single-wafer area is a diffusion surface, and one surface, facing the double-wafer area, of the silicon wafer not is a non-diffusion surface.

3. The quartz boat of claim 2, wherein: the vertical rod in the double-wafer area is provided with a plurality of second slots, the second slots are distributed along the length direction of the vertical rod, and the second slots bear double wafers.

4. The quartz boat of claim 2, wherein: the vertical rod in the upper single-chip area is provided with at least one first slot, the first slots are distributed along the length direction of the vertical rod, and the first slots bear single-chip silicon wafers.

5. The quartz boat of claim 2, wherein: the vertical rod in the lower single-chip area is provided with at least one third slot, the third slots are distributed along the length direction of the vertical rod, and the lower single-chip slot bears a single silicon chip.

6. The quartz boat of claim 2, wherein: the upper end and the lower end of the vertical rod are respectively and fixedly provided with an end plate.

7. A quartz boat as set forth in claim 3 wherein: the height of the second slot is larger than the height formed by the two silicon chips.

8. The quartz boat of claim 4, wherein: the height of the first slot is larger than that of the single silicon chip.

9. The quartz boat of claim 5, wherein: the height of the third slot is larger than that of the single silicon chip.

10. The quartz boat of claim 1, wherein: and the surfaces of the double-piece silicon of the double-piece area are abutted.

Images