CN217846491U - Detection circuit of aluminum electrolytic vessel - Google Patents
Detection circuit of aluminum electrolytic vessel Download PDFInfo
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- CN217846491U CN217846491U CN202221637619.XU CN202221637619U CN217846491U CN 217846491 U CN217846491 U CN 217846491U CN 202221637619 U CN202221637619 U CN 202221637619U CN 217846491 U CN217846491 U CN 217846491U
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- resistor
- electrically connected
- voltage
- operational amplifier
- effect transistor
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 13
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 13
- 238000001514 detection method Methods 0.000 title claims abstract description 9
- 230000005669 field effect Effects 0.000 claims abstract description 16
- 239000003990 capacitor Substances 0.000 claims description 20
- 230000000087 stabilizing effect Effects 0.000 claims description 8
- 230000008859 change Effects 0.000 abstract description 9
- 239000004411 aluminium Substances 0.000 abstract description 3
- 238000005259 measurement Methods 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
The utility model relates to a detection circuitry of aluminium electrolytic vessel, including resistance R1, R2, R3, R4, R5, R6, electric capacity C1, C2, zener diode Z, field effect transistor MOS and operational amplifier OA, through resistance R1, the electrolytic vessel C's that detects voltage can be treated to R2 adopts, operational amplifier OA carries out the operation to this sampled voltage relatively hou ding and can the accurate measurement wait to detect electrolytic vessel C's voltage and current change, can investigate the hidden internal damage problem that hotel vessel exists fast accurately according to the situation of change of this voltage and electric current, overall structure is simple.
Description
Technical Field
The utility model relates to a technical field that aluminium electrolytic vessel detected, concretely relates to detection circuitry of aluminium electrolytic vessel.
Background
The aluminum electrolytic capacitor is widely applied to switching power supplies, welding equipment and the like, mainly plays a role in filtering in a circuit, has an opportunity of generating defects in the production and processing process of the aluminum electrolytic capacitor, and the defects influence the use quality of products, so the aluminum electrolytic capacitor needs to be detected before delivery, and the existing detection circuit of the regular aluminum electrolytic capacitor has the defects of insufficient precision and complex structure.
Therefore, further improvement is required.
SUMMERY OF THE UTILITY MODEL
The present invention is directed to overcome the deficiencies of the prior art, and provides a detection circuit for an aluminum electrolytic container, which is at least used to solve one of the above technical problems in the prior art to a certain extent.
The purpose of the utility model is realized like this:
a detection circuit of an aluminum electrolytic container comprises resistors R1, R2, R3, R4, R5 and R6, capacitors C1 and C2, a voltage stabilizing diode Z, a field effect transistor MOS and an operational amplifier OA.
The upper end of the resistor R1 is electrically connected with the upper end of the capacitor C1, the left and right ends of the resistor R3 and the upper end of the electrolytic container C to be detected respectively.
The upper end of the resistor R2 is electrically connected with the lower end of the resistor R1, the lower end of the resistor R2 is electrically connected with the lower end of the capacitor C1, the anode of the voltage stabilizing diode Z, the lower end of the resistor R4 and the lower end of the electrolytic container C to be detected respectively, and the right end of the resistor R3 is electrically connected with the upper end of the capacitor C2.
And the cathode of the voltage stabilizing diode Z is electrically connected with the lower end of the capacitor C2, the upper end of the resistor R4 and the drain electrode of the field effect transistor MOS respectively.
The source electrode of the field effect transistor MOS is respectively electrically connected with the lower end of the resistor R5 and the right end of the resistor R6, the upper end of the resistor R5 is grounded, the left end of the resistor R6 is electrically connected with the inverting input end of the operational amplifier OA, and the output end of the operational amplifier OA is electrically connected with the grid electrode of the field effect transistor MOS.
The utility model has the advantages that:
the voltage of the electrolytic container C to be detected can be detected through the resistors R1 and R2, the voltage and current change of the electrolytic container C to be detected can be accurately measured after the operational comparison is carried out on the sampling voltage by the operational amplifier OA, the hidden internal damage problem of the hotel container can be rapidly and accurately checked according to the change condition of the voltage and the current, and the whole structure is simple.
Additional aspects and advantages of the invention will be set forth in part in the description which follows, or may be learned by practice of the invention.
Drawings
Fig. 1 is a schematic circuit diagram of an embodiment of the present invention.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and examples.
Referring to fig. 1, the detection circuit of the aluminum electrolytic container comprises resistors R1, R2, R3, R4, R5 and R6, capacitors C1 and C2, a zener diode Z, a field effect transistor MOS and an operational amplifier OA, wherein the voltage of the electrolytic container C to be detected can be adopted through the resistors R1 and R2, the operational amplifier OA can accurately measure the voltage and current changes of the electrolytic container C to be detected after the sampled voltage is subjected to operational comparison, the hidden internal damage problem of the hotel container can be rapidly and accurately checked according to the voltage and current changes, and the whole structure is simple.
The upper end of the resistor R1 is respectively and electrically connected with the upper end of the capacitor C1, the left and right ends of the resistor R3 and the upper end of the electrolytic container C to be detected.
The upper end of the resistor R2 is electrically connected with the lower end of the resistor R1, the lower end of the resistor R2 is electrically connected with the lower end of the capacitor C1, the anode of the voltage stabilizing diode Z, the lower end of the resistor R4 and the lower end of the electrolytic container C to be detected respectively, and the right end of the resistor R3 is electrically connected with the upper end of the capacitor C2.
The cathode of the voltage stabilizing diode Z is electrically connected with the lower end of the capacitor C2, the upper end of the resistor R4 and the drain electrode of the field effect transistor MOS respectively.
The source of the field effect transistor MOS is electrically connected to the lower end of the resistor R5 and the right end of the resistor R6, respectively, the upper end of the resistor R5 is grounded, the left end of the resistor R6 is electrically connected to the inverting input terminal of the operational amplifier OA, and the output terminal of the operational amplifier OA is electrically connected to the gate of the field effect transistor MOS.
When the voltage at the two ends of the electrolytic container C to be detected is stable, the resistors R1 and R2 carry out voltage sampling, direct current cannot pass through due to the existence of the capacitor C2, and the drain electrode of the field effect transistor MOS cannot detect a voltage signal. When the detected electrolytic container C is implosion, the direct current voltage at the two ends of the detected electrolytic container C is subjected to sudden change, R3, C2 and R4 are connected in series, at the moment, because the voltage of the detected electrolytic container C is suddenly changed, C2 can enable the two ends of R4 to have voltage through the sudden change voltage, and the Zener diode Z can prevent the field effect transistor MOS from being damaged due to overhigh sudden change voltage. The sampling voltage of the resistors R1 and R2 is compared with the reference voltage of the OA input end of the operational amplifier in an operation mode to obtain the control current of the field effect transistor MOS, so that the current and voltage change of the electrolytic container C to be detected can be accurately measured, and the hidden internal damage problem of the hotel container can be rapidly and accurately checked according to the current and voltage change condition.
The above embodiments are merely preferred embodiments of the present invention, and other embodiments are also possible. Equivalent modifications or substitutions may be made by those skilled in the art without departing from the spirit of the invention, and such equivalent modifications or substitutions are intended to be included within the scope of the claims set forth herein.
Claims (1)
1. The detection circuit of the aluminum electrolytic container is characterized by comprising resistors R1, R2, R3, R4, R5 and R6, capacitors C1 and C2, a voltage stabilizing diode Z, a field effect transistor MOS and an operational amplifier OA;
the upper end of the resistor R1 is electrically connected with the upper end of the capacitor C1, the left side and the right side of the resistor R3 and the upper end of the electrolytic container C to be detected respectively;
the upper end of the resistor R2 is electrically connected with the lower end of the resistor R1, the lower end of the resistor R2 is electrically connected with the lower end of the capacitor C1, the anode of the voltage stabilizing diode Z, the lower end of the resistor R4 and the lower end of the electrolytic container C to be detected respectively, and the right end of the resistor R3 is electrically connected with the upper end of the capacitor C2;
the cathode of the voltage stabilizing diode Z is electrically connected with the lower end of the capacitor C2, the upper end of the resistor R4 and the drain electrode of the field effect transistor MOS respectively;
the source electrode of the field effect transistor MOS is respectively and electrically connected with the lower end of the resistor R5 and the right end of the resistor R6, the upper end of the resistor R5 is grounded, the left end of the resistor R6 is electrically connected with the inverting input end of the operational amplifier OA, and the output end of the operational amplifier OA is electrically connected with the grid electrode of the field effect transistor MOS.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221637619.XU CN217846491U (en) | 2022-06-27 | 2022-06-27 | Detection circuit of aluminum electrolytic vessel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221637619.XU CN217846491U (en) | 2022-06-27 | 2022-06-27 | Detection circuit of aluminum electrolytic vessel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN217846491U true CN217846491U (en) | 2022-11-18 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202221637619.XU Active CN217846491U (en) | 2022-06-27 | 2022-06-27 | Detection circuit of aluminum electrolytic vessel |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN217846491U (en) |
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2022
- 2022-06-27 CN CN202221637619.XU patent/CN217846491U/en active Active
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