CN217822826U - P-BN/i-Ga 2 O 3 /n-Ga 2 O 3 Solar blind type ultraviolet detector - Google Patents
P-BN/i-Ga 2 O 3 /n-Ga 2 O 3 Solar blind type ultraviolet detector Download PDFInfo
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Abstract
The utility model discloses a p-BN/i-Ga 2 O 3 /n‑Ga 2 O 3 The solar blind type ultraviolet detector of (1), comprising: substrate, n-type Ga 2 O 3 Layer, i-type Ga 2 O 3 The semiconductor device comprises a layer, a p-type BN layer, an n-type ohmic electrode and a p-type ohmic electrode; n type Ga 2 O 3 Layer on the substrate(ii) a Type i Ga 2 O 3 The layer and the n-type ohmic electrode are both located in n-type Ga 2 O 3 Layered, i-type Ga 2 O 3 The layer and the n-type ohmic electrode are arranged at intervals; the p-type BN layer being located in i-type Ga 2 O 3 On the layer; the p-type ohmic electrode is positioned on the p-type BN layer; wherein the p-type BN layer is made of wurtzite boron nitride material, and the thickness of the p-type BN layer is 50-100nm. The utility model discloses an adopt wurtzite type boron nitride as p type layer for p type doping activation energy is 31meV only, can make p type BN layer realize 1 x 10 easily 18 cm ‑3 Due to the hole concentration, the resistivity of the P-type boron nitride material can be reduced to be lower than 12 omega cm, and the P-type BN layer can effectively provide holes and form good ohmic contact with the metal electrode, so that the response time of the detector is shortened, and the quantum efficiency and the spectral responsivity are improved.
Description
Technical Field
The utility model belongs to the technical field of semiconductor photoelectronic device technology and specifically relates to a p-BN/i-Ga 2 O 3 /n-Ga 2 O 3 A solar blind type ultraviolet detector.
Background
The ultraviolet detection technology is a photoelectric detection technology for military and civil use developed after infrared and laser detection technologies. In the civil market, the ultraviolet detection technology is widely applied to many fields, such as fluorescence analysis technology, biochemical technology, environmental monitoring, public security criminal investigation, high-density storage of optical information, fire alarm, counterfeit money identification, medical care and the like. In military field, because ultraviolet radiation has strong scattering property when propagating in the atmosphere, the application of ultraviolet detection technology in military affairs is attracting attention and developing rapidly.
Ga 2 O 3 Is a III-VI oxide semiconductor material, and has larger forbidden band width, higher transparency, excellent optical characteristics and stable physicochemical properties. Ga 2 O 3 The forbidden band width of the crystal is 4.5-4.9 eV, correspondinglyThe ultraviolet detector has the wavelength just in the near ultraviolet solar blind area, has a remarkable absorption effect on radiation with the wavelength less than 290nm, is basically transparent to radiation with other wave bands, and is an ideal material for preparing the solar blind ultraviolet detector. Ga 2 O 3 Compared with the conventional common solar blind ultraviolet sensitive materials such as AlGaN and ZnMgO, the solar blind ultraviolet detector has larger forbidden bandwidth, so that the gallium oxide based ultraviolet detector has better properties compared with the conventional ultraviolet detector. The p-i-n type detector is the most commonly used device at present, and the device has the advantages of low working voltage, low dark current, high quantum efficiency, high response speed, and capability of fusing manufacturing technology and semiconductor planar technology.
Pure Ga 2 O 3 Since the optical band gap is short, it tends to exhibit a high resistance state at normal temperature. Intrinsic gallium oxide behaves as an n-type semiconductor. Its maximum electron mobility is 0.40cm 2 V -1 S -1 And is about two orders of magnitude less than the electron mobility of a single crystal sample. Due to the low electron mobility of the film in practical use and due to the presence of oxygen vacancies, undoped Ga 2 O 3 The electrical properties of the gallium oxide thin film are improved by doping elements such as Ta, sn, ge, si and the like to carry out n-type conductive doping on the gallium oxide thin film. However, it is difficult to dope it p-type, which results in a long response time of the detector, a reduced quantum efficiency, and a poor spectral responsivity. Conventional Ga 2 O 3 The ultraviolet detector generally adopts p-type Ga 2 O 3 As a p-doped layer, then due to Ga 2 O 3 The intrinsic defects such as oxygen vacancy and the like exist in the preparation process of the film, so that the carrier concentration is reduced, and the response time of the detector is prolonged, the quantum efficiency is reduced, and the spectral responsivity is deteriorated.
SUMMERY OF THE UTILITY MODEL
In order to solve the above problems in the prior art, the present invention provides a p-BN/i-Ga alloy 2 O 3 /n-Ga 2 O 3 A solar blind type ultraviolet detector. The technical problem to be solved by the utility modelThe method is realized by the following technical scheme:
P-BN/i-Ga 2 O 3 /n-Ga 2 O 3 The solar blind type ultraviolet detector of (1), comprising: substrate, n-type Ga 2 O 3 Layer, i-type Ga 2 O 3 The semiconductor device comprises a layer, a p-type BN layer, an n-type ohmic electrode and a p-type ohmic electrode;
the n-type Ga 2 O 3 A layer on the substrate;
the i-type Ga 2 O 3 The layer and the n-type ohmic electrode are both located on the n-type Ga 2 O 3 On a layer of the i-type Ga 2 O 3 The layer and the n-type ohmic electrode are arranged at intervals;
the p-type BN layer is positioned in the i-type Ga 2 O 3 On the layer;
the p-type ohmic electrode is positioned on the p-type BN layer;
the p-type BN layer is made of wurtzite boron nitride materials, and the thickness of the p-type BN layer is 50-100nm.
In an embodiment of the present invention, the wurtzite-type boron nitride material is a Mg-doped wurtzite-type boron nitride material.
In one embodiment of the present invention, the substrate is a c-plane sapphire crystal with a thickness of 100-150 nm.
In one embodiment of the present invention, the n-type Ga 2 O 3 The layer is Si-doped n-type Ga with the thickness of 300-400nm 2 O 3 And (3) a layer.
In one embodiment of the present invention, the i-type Ga 2 O 3 The thickness of the layer is 852-990nm.
In an embodiment of the present invention, the p-type BN layer is grown using an MOCVD process.
The utility model has the advantages that:
the utility model discloses an adopt wurtzite type boron nitride as p type layer for p type doping activation energy is 31meV only, can make p type BN layer realize 1X 10 easily 18 cm -3 The above hole concentration makes the resistance of the P-type boron nitride materialThe rate can be reduced to below 12 omega cm, and the p-type BN layer can effectively provide holes and form good ohmic contact with the metal electrode, so that the response time of the detector is shortened, and the quantum efficiency and the spectral responsivity are improved.
The present invention will be described in further detail with reference to the drawings and examples.
Drawings
FIG. 1 shows a p-BN/i-Ga according to an embodiment of the present invention 2 O 3 /n-Ga 2 O 3 The sectional structure schematic diagram of the solar blind type ultraviolet detector;
FIG. 2 a-FIG. 2e show a p-BN/i-Ga structure provided by an embodiment of the present invention 2 O 3 /n-Ga 2 O 3 The preparation process schematic diagram of the solar blind type ultraviolet detector is shown.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
Please refer to FIG. 1, a p-BN/i-Ga 2 O 3 /n-Ga 2 O 3 The solar blind type ultraviolet detector of (1), comprising: substrate 1, n-type Ga 2 O 3 Layer 2, i-type Ga 2 O 3 Layer 4, p-type BN layer 5, n-type ohmic electrode 3 and p-type ohmic electrode 6. Substrate 1, n-type Ga 2 O 3 Layer 2, i-type Ga 2 O 3 The layer 4 and the p-type BN layer 5 are sequentially arranged from bottom to top. n type Ga 2 O 3 Layer 2 is located on substrate 1. Type i Ga 2 O 3 Layer 4 and n-type ohmic electrode 3 are both located on n-type Ga 2 O 3 On layer 2, i-type Ga 2 O 3 The layer 4 and the n-type ohmic electrode 3 are spaced apart. p-type BN layer 5 in i-type Ga 2 O 3 On layer 4, p-type BN layer 5 is formed by i-type Ga 2 O 3 The surface of the layer 4 is completely covered. The p-type ohmic electrode 6 is located on the p-type BN layer 5. Wherein the p-type BN layer 5 is made of wurtzite boron nitride material, and the thickness of the p-type BN layer 5 is 50-100nm.
In this embodiment, wurtzite boron nitride is used as the p-type layer, so that p-type doping is performedThe activation energy is only 31meV, so that the p-type BN layer 5 can be easily realized by 1 multiplied by 10 18 cm -3 Due to the hole concentration, the resistivity of the P-type boron nitride material can be reduced to be lower than 12 omega cm, and the P-type BN layer 5 can effectively provide holes and form good ohmic contact with the metal electrode, so that the response time of the detector is shortened, and the quantum efficiency and the spectral responsivity are improved.
The p-type BN layer 5 is grown by the MOCVD process, the p-type BN layer 5 can be deposited only by using organic sources such as triethylboron and the like, an additional growth process is not needed, and the method is compatible with the current MOCVD growth process.
Furthermore, mg-doped wurtzite boron nitride material is adopted as the p-type BN layer, and the hole concentration of the p-type BN layer 5 is 1 multiplied by 10 18 cm -3 The above.
Further, the substrate 1 is made of a c-plane sapphire crystal of 100 to 150 nm. In this example, a boron nitride film of wurtzite structure was used as Ga 2 O 3 The p-type BN layer 5 material of the basic solar blind type ultraviolet detector adopts c-plane sapphire as Ga 2 O 3 Substrate 1 for a UV detector of the basal solar blind type, their lattice constant and Ga 2 O 3 The materials are matched, and the stress in the growth of the materials can be reduced in the preparation process, so that heteroepitaxy can be well performed among layers.
Further, n-type Ga 2 O 3 Layer 2 is Si-doped n-type Ga having a thickness of 300-400nm 2 O 3 A layer.
Further, i-type Ga 2 O 3 The thickness of layer 4 is 852-990nm.
Furthermore, the n-type ohmic electrode 3 is a Ti/Al/Ni/Au multilayer metal layer structure sequentially stacked from top to bottom, and the p-type ohmic electrode 6 is a Ni/Au double-layer metal layer structure sequentially stacked from top to bottom.
p-BN/i-Ga of the example 2 O 3 /n-Ga 2 O 3 The solar blind type ultraviolet detector can be used in the fields of ultraviolet communication, fluorescence analysis, biomedical test, ozone detection, fire alarm, public security criminal investigation and the like.
Example two
This example provides a p-BN/i-Ga 2 O 3 /n-Ga 2 O 3 The preparation method of the solar blind ultraviolet detector comprises the following steps:
step 201, growing Si-doped n-type Ga with the thickness of 300-400nm on a substrate 1 by using an MOCVD process 2 O 3 Layer 2. The specific process conditions are as follows:
the temperature of the reaction chamber is 700-850 ℃, the pressure of the reaction chamber is kept at 20-40Torr, and high-purity argon with the flow rate of 10-15sccm, high-purity oxygen with the flow rate of 380-420sccm, high-purity nitrogen with the flow rate of 800-1000sccm, silane with the flow rate of 0.08-0.20sccm and a gallium source (TMGa) with the flow rate of 260-280sccm are simultaneously introduced into the reaction chamber.
Step 202, in n-type Ga 2 O 3 Growing undoped i-type Ga with the thickness of 852-990nm on the layer 2 by using an MOCVD process 2 O 3 And (4) a layer. The specific process conditions are as follows:
the temperature of the reaction chamber is 700-850 ℃, the pressure of the reaction chamber is kept at 20-40Torr, three gases of high-purity argon gas with the flow of 10-15sccm, high-purity oxygen gas with the flow of 380-420sccm, high-purity nitrogen gas with the flow of 800-1000sccm and a gallium source (TMGa) with the flow of 260-280sccm are simultaneously introduced into the reaction chamber.
Step 203, in the i-type Ga 2 O 3 On the layer 4, a p-type BN layer 5 with the thickness of 50-100nm is grown by utilizing the MOCVD process, and the process conditions are as follows:
the temperature of the reaction chamber is 950-1100 ℃, the pressure of the reaction chamber is kept at 20-80Torr, and three gases of ammonia gas with the flow rate of 2500-3000sccm, boron source with the flow rate of 150-180sccm and magnesium source with the flow rate of 10-12sccm are simultaneously introduced into the reaction chamber.
Step 204, etching from the top p-type BN layer 5 to n-type Ga by adopting inductive coupling plasma or reactive ion etching 2 O 3 Layer 2 of n-type Ga 2 O 3 A table-board.
Step 205, in n-type Ga 2 O 3 And (3) photoetching the graph of the n-type electrode on the table board, and evaporating the n-type ohmic electrode 3 by using a film plating machine.
Step 206, a P-type electrode pattern is photo-etched on the P-type BN layer 5, and a P-type ohmic electrode 6 is vapor-deposited by using a film plating machine, thereby completing the device fabrication of the first embodiment.
EXAMPLE III
On the basis of the second embodiment, this embodiment provides a specific manufacturing method of the device of the first embodiment, wherein the detection cut-off wavelength of the manufactured device is 285nm, including the following steps:
step 301, a pre-treatment of the substrate 1 is performed.
1a cleaning c-plane sapphire substrate 1, placing the cleaned c-plane sapphire substrate in a Metal Organic Chemical Vapor Deposition (MOCVD) reaction chamber, and reducing the vacuum degree of the reaction chamber to 2 x 10 -2 Torr; introducing hydrogen into the reaction chamber, heating the substrate 1 to 1000 ℃ under the condition that the pressure of the MOCVD reaction chamber reaches 200Torr, and keeping the temperature for 9min to finish the heat treatment of the substrate 1;
2a, placing the substrate 1 after heat treatment in a reaction chamber with the temperature of 750 ℃, introducing nitrogen with the flow of 4000sccm, and nitriding for 10min to finish nitriding.
Step 302 of growing n-type Ga 2 O 3 Layer 2.
On the c-plane sapphire substrate 1, high-purity argon gas with the flow rate of 10sccm, high-purity oxygen gas with the flow rate of 380sccm, high-purity nitrogen gas with the flow rate of 800sccm, silane with the flow rate of 0.08sccm and a gallium source (TMGa) with the flow rate of 260sccm are simultaneously introduced by adopting an MOCVD process under the condition that the temperature of a reaction chamber is 750 ℃.
The film was grown to a thickness of 300nm and a doping concentration of 1X 10 under a condition of maintaining a pressure of 20Torr 18 cm -3 Of n-type Ga 2 O 3 Layer 2, as shown in fig. 2 a.
Step 303 of growing i-type Ga 2 O 3 And (4) a layer.
In n-type Ga 2 O 3 And simultaneously introducing high-purity argon with the flow rate of 10sccm, high-purity oxygen with the flow rate of 380sccm, high-purity nitrogen with the flow rate of 800sccm and a gallium source (TMGa) with the flow rate of 260sccm into the layer 2 by adopting an MOCVD process under the condition that the temperature of a reaction chamber is 750 ℃.
Growth of i with a thickness of 852nm while maintaining a pressure of 20TorrForm Ga 2 O 3 Layer 4 as shown in fig. 2 b.
Step 304, a p-type BN layer 5 is grown.
In type i Ga 2 O 3 The layer 4 was grown by MOCVD under a condition of a reaction chamber temperature of 1100 deg.C, simultaneously with introduction of ammonia gas at a flow rate of 2500sccm, a boron source at a flow rate of 150sccm and an Mg source at a flow rate of 10sccm under a condition of a pressure of 40Torr to have a doping concentration of 1X 10 nm and a thickness of 60nm 18 cm -3 As shown in fig. 2c, the p-type BN layer 5 of (1).
Step 305, etching and manufacturing electrodes.
Etching from the top p-type BN layer 5 to n-type Ga by using inductively coupled plasma or reactive ion etching 2 O 3 Layer 2 of n-type Ga 2 O 3 Mesa as shown in fig. 2 d. Respectively sputtering metal on n-type Ga 2 O 3 Depositing an n-type ohmic electrode 3 on the layer 2, on the p-type Ga 2 O 3 Layer deposition of a p-type ohmic electrode 6 to complete detection of Ga having a cut-off wavelength of 285nm 2 O 3 And (4) manufacturing the basic ultraviolet detector, as shown in figure 2 e.
Example four
On the basis of the second embodiment, this embodiment provides a specific manufacturing method of the device of the first embodiment, wherein the detection cut-off wavelength of the manufactured device is 275nm, and the method includes the following steps:
step 401, a substrate 1 is pre-processed.
Firstly, c-plane sapphire substrate 1 is cleaned and then placed in a Metal Organic Chemical Vapor Deposition (MOCVD) reaction chamber, and the vacuum degree of the reaction chamber is reduced to 2 x 10 -2 Torr; introducing hydrogen into the reaction chamber, heating the substrate 1 to 1200 ℃ under the condition that the pressure of the MOCVD reaction chamber reaches 750Torr, and keeping the temperature for 5min to finish the heat treatment on the substrate of the substrate 1;
then, the substrate 1 after the heat treatment is placed in a reaction chamber with the temperature of 800 ℃, ammonia gas with the flow of 3000sccm is introduced, and nitridation is performed for 8min, so that nitridation is completed.
Step 402 of growing n-type Ga 2 O 3 Layer 2.
On the c-plane sapphire substrate 1, high-purity argon gas with the flow rate of 10sccm, high-purity oxygen gas with the flow rate of 380sccm, high-purity nitrogen gas with the flow rate of 800sccm, silane with the flow rate of 0.12sccm and a gallium source (TMGa) with the flow rate of 260sccm are simultaneously introduced by adopting an MOCVD process under the condition that the temperature of a reaction chamber is 800 ℃.
The film was grown to a thickness of 340nm and a doping concentration of 1.5X 10 under a condition of maintaining a pressure of 30Torr 18 cm -3 Of n-type Ga 2 O 3 Layer 2, as shown in fig. 2 a.
Step 403 of growing i-type Ga 2 O 3 And (4) a layer.
In n-type Ga 2 O 3 And simultaneously introducing high-purity argon with the flow rate of 10sccm, high-purity oxygen with the flow rate of 380sccm, high-purity nitrogen with the flow rate of 800sccm and a gallium source (TMGa) with the flow rate of 260sccm into the layer 2 by adopting an MOCVD process under the condition that the temperature of the reaction chamber is 800 ℃.
Growing i-type Ga with a thickness of 900nm under a condition of maintaining a pressure of 30Torr 2 O 3 Layer 4 as shown in fig. 2 b.
Step 404, growing a p-type BN layer 5.
In type i Ga 2 O 3 The layer 4 was grown by MOCVD under a condition of 1050 ℃ in the reaction chamber, simultaneously with 2800sccm ammonia gas, 165sccm boron source and 11sccm Mg source, under a pressure of 60Torr, to a thickness of 80nm with a doping concentration of 1.5X 10 18 cm -3 As shown in fig. 2c, of the p-type BN layer 5.
Step 405, etch and make electrodes.
This step was carried out in the same manner as step 305 of the third example, and Ga having a detection cut-off wavelength of 275nm was detected 2 O 3 And (4) manufacturing the basic ultraviolet detector, as shown in figure 2 e.
EXAMPLE five
On the basis of the second embodiment, this embodiment provides a specific manufacturing method of the device of the first embodiment, wherein the detection cutoff wavelength of the manufactured device is 270nm, and the method includes the following steps:
step 501, a substrate 1 is pre-processed.
Cleaning a c-plane sapphire substrate 1, placing the cleaned c-plane sapphire substrate in a Metal Organic Chemical Vapor Deposition (MOCVD) reaction chamber, and reducing the vacuum degree of the reaction chamber to 2 x 10 -2 Torr; introducing hydrogen into the reaction chamber, heating the substrate 1 to 900 ℃ under the condition that the pressure of the MOCVD reaction chamber reaches 50Torr, and keeping the temperature for 5min to finish the heat treatment of the substrate 1; and then placing the substrate 1 after the heat treatment in a reaction chamber with the temperature of 850 ℃, introducing nitrogen with the flow of 2000sccm, and nitriding for 5min to finish nitriding.
Step 502 of growing n-type Ga 2 O 3 Layer 2.
On the c-plane sapphire substrate 1, high-purity argon gas with the flow rate of 10sccm, high-purity oxygen gas with the flow rate of 380sccm, high-purity nitrogen gas with the flow rate of 800sccm, silane with the flow rate of 0.16sccm and a gallium source (TMGa) with the flow rate of 260sccm are simultaneously introduced by adopting an MOCVD process under the condition that the temperature of a reaction chamber is 850 ℃.
The film was grown to a thickness of 400nm and a doping concentration of 2X 10 under a condition of maintaining a pressure of 40Torr 18 cm -3 Of n-type Ga 2 O 3 Layer 2 as shown in fig. 2 a.
Step 503, growing i-type Ga 2 O 3 And (4) a layer.
In n-type Ga 2 O 3 And simultaneously introducing high-purity argon with the flow rate of 10sccm, high-purity oxygen with the flow rate of 380sccm, high-purity nitrogen with the flow rate of 800sccm and a gallium source (TMGa) with the flow rate of 260sccm into the layer 2 by adopting an MOCVD (metal organic chemical vapor deposition) process under the condition that the temperature of a reaction chamber is 850 ℃.
Growth of i-type Ga with a thickness of 990nm under a condition of maintaining a pressure of 40Torr 2 O 3 Layer 4 as shown in fig. 2 b.
Step 504, a p-type BN layer 5 is grown.
In type i Ga 2 O 3 The layer 4 was grown by an MOCVD process under a temperature of 950 ℃ in the reaction chamber while introducing three gases of ammonia gas at a flow rate of 2800sccm, a boron source at a flow rate of 165sccm and an Mg source at a flow rate of 12sccm under a pressure of 80Torr at a thickness of 100nm with a doping concentration of 1X 10 19 cm -3 As shown in fig. 2c, the p-type BN layer 5 of (1).
And 505, etching and manufacturing an electrode.
This step is carried out in the same manner as step 305 of the third embodiment, and the detection of Ga having a cut-off wavelength of 270nm is completed 2 O 3 And (4) manufacturing the ultraviolet-based detector as shown in figure 2 e.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and to simplify the description, but do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," and "fixed" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
In the present application, unless expressly stated or limited otherwise, the recitation of a first feature "on" or "under" a second feature may include the recitation of the first and second features being in direct contact, and may also include the recitation of the first and second features not being in direct contact, but being in contact with another feature between them. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
In the description of the present specification, reference to the description of "one embodiment," "some embodiments," "an example," "a specific example," or "some examples" or the like means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
The foregoing is a more detailed description of the present invention, taken in conjunction with the specific preferred embodiments thereof, and it is not intended that the invention be limited to the specific embodiments shown and described. To the utility model belongs to the technical field of ordinary technical personnel, do not deviate from the utility model discloses under the prerequisite of design, can also make a plurality of simple deductions or replacement, all should regard as belonging to the utility model discloses a protection scope.
Claims (6)
1. P-BN/i-Ga 2 O 3 /n-Ga 2 O 3 The solar blind type ultraviolet detector of (1), characterized by comprising: substrate (1), n-type Ga 2 O 3 Layer (2), i-type Ga 2 O 3 A layer (4), a p-type BN layer (5), an n-type ohmic electrode (3) and a p-type ohmic electrode (6);
the n-type Ga 2 O 3 A layer (2) is located on the substrate (1);
the i-type Ga 2 O 3 The layer (4) and the n-type ohmic electrode (3) are both located on the n-type Ga 2 O 3 On layer (2), the i-type Ga 2 O 3 The layer (4) and the n-type ohmic electrode (3) are arranged at intervals;
the p-type BN layer (5) is located in the i-type Ga 2 O 3 On the layer (4);
the p-type ohmic electrode (6) is positioned on the p-type BN layer (5);
the p-type BN layer (5) is made of wurtzite boron nitride materials, and the thickness of the p-type BN layer (5) is 50-100nm.
2. A p-BN/i-Ga according to claim 1 2 O 3 /n-Ga 2 O 3 The solar-blind ultraviolet detector is characterized in that the wurtzite boron nitride material is Mg-doped wurtzite boron nitride material.
3. A p-BN/i-Ga according to claim 2 2 O 3 /n-Ga 2 O 3 The solar blind ultraviolet detector is characterized in that the substrate (1) adopts c-plane sapphire crystals with the thickness of 100-150 nm.
4. A p-BN/i-Ga according to claim 2 2 O 3 /n-Ga 2 O 3 Characterized in that the n-type Ga is 2 O 3 The layer (2) is Si-doped n-type Ga with the thickness of 300-400nm 2 O 3 And (3) a layer.
5. A p-BN/i-Ga according to claim 2 2 O 3 /n-Ga 2 O 3 Characterized in that the i-type Ga is 2 O 3 Thickness of layer (4)The degree is 852-990nm.
6. A p-BN/i-Ga according to claim 2 2 O 3 /n-Ga 2 O 3 The solar blind ultraviolet detector is characterized in that the p-type BN layer (5) grows by adopting an MOCVD process.
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