CN217822746U - Semiconductor MOS field effect transistor - Google Patents

Semiconductor MOS field effect transistor Download PDF

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Publication number
CN217822746U
CN217822746U CN202221753042.9U CN202221753042U CN217822746U CN 217822746 U CN217822746 U CN 217822746U CN 202221753042 U CN202221753042 U CN 202221753042U CN 217822746 U CN217822746 U CN 217822746U
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China
Prior art keywords
effect transistor
fixedly connected
field effect
mos field
protecting crust
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CN202221753042.9U
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Chinese (zh)
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陈朱雄
陈洁玲
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Shenzhen Yongyutai Electronics Co ltd
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Shenzhen Yongyutai Electronics Co ltd
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Abstract

The utility model discloses a semiconductor MOS field effect transistor belongs to effect tube technical field, including the protecting crust, the place ahead of protecting crust is equipped with the protective cover, two layer boards of inner wall fixedly connected with of protecting crust, the common joint in inside of two layer boards has the effect tube body, three through-hole has been seted up to the inner diapire of protecting crust, two locating racks of the equal fixedly connected with in front of every layer board, the equal threaded connection in front of every locating rack has positioning bolt, mount pad, construction bolt and nut through setting up, can realize the bolted connection of protecting crust, the protective cover is opened fast to the staff of being convenient for, the convenience is to the maintenance of effect tube body, and through the locating rack that sets up, positioning bolt and protection pad, can utilize the threaded connection of locating rack and positioning bolt, drive the protection pad and reciprocate, and through the cooperation with the layer board, it is fixed to realize the bolt location of effect tube body, the staff of being convenient for is to the maintenance and the quick dismouting change work of effect tube body.

Description

Semiconductor MOS field effect transistor
Technical Field
The utility model relates to a effect transistor technical field specifically is a semiconductor MOS field effect transistor.
Background
A Field Effect Transistor (FET), called FET for short, is a semiconductor device for controlling the current of output loop by controlling the electric field effect of input loop, in which, the MOS FET is one of the main types, it has the advantages of high input resistance (10 ^ 8-10 ^9 omega), low noise, low power consumption, large dynamic range, easy integration, no secondary breakdown phenomenon, wide safe working area, etc., and has become the powerful competitors of bipolar transistor and power transistor.
Chinese patent No. CN212517182U discloses a fast heat dissipation type semiconductor MOS field effect transistor, but there is a certain disadvantage in the above patent, the epoxy packaging shell of the external shell is a closed whole external shell, the external shell can not be disassembled, and the semiconductor MOS field effect transistor is directly packaged in the internal shell, which is inconvenient for the worker to maintain, disassemble, assemble and replace the semiconductor MOS field effect transistor, therefore, the technical personnel in the field provide a semiconductor MOS field effect transistor to solve the problems proposed in the above background technology.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a semiconductor MOS field effect transistor to solve the problem that proposes among the above-mentioned background art.
In order to achieve the above purpose, the utility model provides a following technical scheme:
the utility model provides a semiconductor MOS field effect transistor, includes the protecting crust, the place ahead of protecting crust is equipped with the protective cover, two layer boards of the inner wall fixedly connected with of protecting crust, two the common joint in inside of layer board has the effect pipe body, the interior diapire of protecting crust has seted up three and has run through the mouth, every two locating racks of the equal fixedly connected with in front of layer board, every the equal threaded connection in front of locating rack has positioning bolt, every the equal fixedly connected with in rear end of positioning bolt protects and fills up, the back that the protection was filled up contacts with the front of effect pipe body.
As a further aspect of the present invention: the utility model discloses a safety protection cover, including protective housing, protective cover, installation bolt, every the equal threaded connection in rear end has mounting nut, two mount pads of the equal fixedly connected with in the left and right sides face of protective cover, every the inside of mount pad all is overlapped and is equipped with mounting bolt, every mounting bolt's the equal threaded connection in rear end has mounting nut.
As a further aspect of the present invention: the front of protective cover is fixed to be inlayed and is had glass observation frame, the front fixedly connected with of protective cover grips.
As a further aspect of the present invention: the equal fixedly connected with of left and right sides face of protecting crust removes the handle, every the surface that removes the handle all overlaps and is equipped with insulating cover.
As a further aspect of the present invention: every the inner wall of penetrating the mouth all overlaps and is equipped with the sealing rubber cover, the tripolar end of effect tube body runs through three sealing rubber cover respectively and extends to the below of protecting crust.
As a further aspect of the present invention: two sets of constant head tanks have been seted up in the front of protective housing, every the equal joint of inner wall of constant head tank has the locating pin, every the front end of locating pin all with the back fixed connection of protective cover.
As a further aspect of the present invention: the inner walls of the two supporting plates are fixedly embedded with heat absorbing plates together, the upper surfaces of the heat absorbing plates are fixedly connected with heat conducting scale plates, and the top ends of the heat conducting scale plates penetrate through the protective shell and extend to the upper side of the protective shell.
Compared with the prior art, the beneficial effects of the utility model are that:
this semiconductor MOS field effect transistor, protective cover through setting up, the mount pad, construction bolt and mounting nut, can realize the bolted connection of protective housing, the staff of being convenient for opens the protective cover fast, the convenient maintenance to the effect tube body, and through the locating rack that sets up, positioning bolt and protection are filled up, can utilize the threaded connection of locating rack and positioning bolt, it reciprocates to drive the protection and fill up, and through the cooperation with the layer board, it is fixed to realize the bolt location of effect tube body, the staff of being convenient for is to the maintenance and the quick assembly disassembly change work of effect tube body.
Drawings
FIG. 1 is a schematic perspective view of a protective shell in a semiconductor MOS FET;
FIG. 2 is a cross-sectional view of an elevation of a shield in a semiconductor MOS field effect transistor;
FIG. 3 is a schematic perspective view of a positioning frame in a semiconductor MOS FET;
FIG. 4 is a rear view of a protective cover of a semiconductor MOS FET;
fig. 5 is an enlarged view of a structure a in fig. 2 of a semiconductor MOS field effect transistor.
In the figure: 1. a protective shell; 2. a heat-conducting apron; 3. a mounting seat; 4. installing a bolt; 5. moving the handle; 6. an effect tube body; 7. a protective cover; 8. a handle is held; 9. a glass observation frame; 10. a heat absorbing plate; 11. a positioning frame; 12. positioning the bolt; 13. a support plate; 14. positioning pins; 15. sealing the rubber sleeve; 16. positioning a groove; 17. an insulating sleeve; 18. a protective pad; 19. mounting a nut; 20. a through opening.
Detailed Description
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are used merely for convenience of description and for simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention. Furthermore, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected" and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art through specific situations.
Please refer to fig. 1-5, in the embodiment of the present invention, a semiconductor MOS field effect transistor, including protective housing 1, the place ahead of protective housing 1 is equipped with protective cover 7, two layer boards 13 of inner wall fixedly connected with of protective housing 1, the common joint in inside of two layer boards 13 has effect transistor body 6, three through-hole 20 has been seted up to the inner bottom wall of protective housing 1, two locating racks 11 of the equal fixedly connected with in front of every layer board 13, the equal threaded connection in front of every locating rack 11 has positioning bolt 12, the equal fixedly connected with protection pad 18 in rear end of every positioning bolt 12, the back of protection pad 18 contacts with the front of effect transistor body 6.
Two mount pads 3 of equal fixedly connected with in the left and right sides face of protective housing 1 and the left and right sides face of protective cover 7, the inside of every group mount pad 3 all overlaps and is equipped with construction bolt 4, the equal threaded connection in rear end of every construction bolt 4 has construction nut 19, can realize the bolt mounting of protective cover 7 and protective housing 1, the maintenance and the maintenance work of staff to effect tube body 6 of being convenient for, the fixed glass observation frame 9 that inlays in front of protective cover 7, the front fixedly connected with of protective cover 7 grips 8, can make the more convenient operating condition who observes protective housing 1 inside effect tube body 6 of staff, and through gripping 8 can make the more convenient protective cover 7 of staff, be convenient for the installation and the dismantlement of protective cover 7, the equal fixedly connected with in left and right sides face of protective housing 1 removes 5, every removes and all overlaps insulating cover 17 to the surface of 5, can make the more convenient removal protective housing 1 of staff, be convenient for using effect tube body 6's grafting
Every inner wall that runs through mouth 20 all overlaps and is equipped with sealing rubber sleeve 15, the tripolar end of effect tube body 6 runs through three sealing rubber sleeve 15 respectively and extends to the below of protecting crust 1, can realize the sealed protection to effect tube body 6, be convenient for the sealed use of effect tube body 6, two sets of constant head tanks 16 have been seted up in the front of protecting crust 1, the equal joint of inner wall of every constant head tank 16 has locating pin 14, the front end of every locating pin 14 all with the back fixed connection of protective cover 7, can fix a position protective cover 7, increase the stability that protective cover 7 and protecting crust 1 are connected the installation, the inner wall of two layer boards 13 is fixed jointly and is inlayed and is had absorber plate 10, the last fixed surface of absorber plate 10 is connected with heat conduction scale 2, the top of heat conduction scale 2 runs through protecting crust 1 and extends to the top of protecting crust 1, can absorb and discharge the heat that effect tube body 6 produced, be convenient for the cooling and the heat dissipation of effect tube body 6, realize the safe use of effect tube body 6.
The utility model discloses a theory of operation is: when the device is used, a worker firstly places the effect tube body 6 on the two supporting plates 13, the back face of the effect tube body 6 is in contact with the heat absorbing plate 10, meanwhile, the three pole ends of the effect tube body 6 sequentially penetrate through the three through holes 20 and are sleeved with the three sealing rubber sleeves 15, then the positioning bolts 12 are rotated, through threaded matching with the positioning frame 11, the protection pads 18 are driven to move close to the effect tube body 6, clamping and positioning of the effect tube body 6 are achieved, then the holding handle 8 is held by hand to take up the protection cover 7, the positioning pins 14 are clamped into the positioning grooves 16, the protection cover 7 is clamped, then the two sets of mounting bolts 4 respectively penetrate through the two sets of mounting seats 3 and are connected with the mounting nuts 19 through threads, sealing protection of the effect tube body 6 is achieved, and then the effect tube body 6 is used.
The above-mentioned, only be the concrete implementation of the preferred embodiment of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art is in the technical scope of the present invention, according to the technical solution of the present invention and the inventive concept equivalent replacement or change, all should be covered within the protection scope of the present invention, to the person skilled in the art, it is obvious that the present invention is not limited to the details of the above-mentioned exemplary embodiment, and the present invention can be realized in other specific forms without departing from the spirit or the basic features of the present invention. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.

Claims (7)

1. The utility model provides a semiconductor MOS field effect transistor, includes protecting crust (1), its characterized in that, the place ahead of protecting crust (1) is equipped with protective cover (7), two layer boards (13) of the inner wall fixedly connected with of protecting crust (1), two the common joint in inside of layer board (13) has effect tube body (6), three run through mouth (20), every have been seted up to the inner bottom wall of protecting crust (1) two locating racks (11) of the equal fixedly connected with in front of layer board (13), every the equal threaded connection in front of locating rack (11) has positioning bolt (12), every the equal fixedly connected with in rear end of positioning bolt (12) protects pad (18), the back of protecting pad (18) contacts with the front of effect tube body (6).
2. The semiconductor MOS field effect transistor according to claim 1, wherein two mounting seats (3) are fixedly connected to the left and right sides of the protective housing (1) and the left and right sides of the protective cover (7), a mounting bolt (4) is sleeved inside each mounting seat (3), and a mounting nut (19) is connected to the rear end of each mounting bolt (4) in a threaded manner.
3. The semiconductor MOS field effect transistor according to claim 1, wherein a glass viewing frame (9) is fixedly embedded in a front surface of the protective cover (7), and a handle (8) is fixedly connected to the front surface of the protective cover (7).
4. The semiconductor MOS field effect transistor according to claim 1, wherein moving handles (5) are fixedly connected to the left and right side surfaces of the protective shell (1), and an insulating sleeve (17) is sleeved on the outer surface of each moving handle (5).
5. The semiconductor MOS field effect transistor according to claim 1, wherein the inner wall of each through hole (20) is sleeved with a sealing rubber sleeve (15), and the three pole ends of the effect transistor body (6) respectively penetrate through the three sealing rubber sleeves (15) and extend to the lower part of the protective shell (1).
6. The semiconductor MOS field effect transistor according to claim 1, wherein two sets of positioning grooves (16) are formed in the front surface of the protective shell (1), a positioning pin (14) is clamped in the inner wall of each positioning groove (16), and the front end of each positioning pin (14) is fixedly connected with the back surface of the protective cover (7).
7. The semiconductor MOS field effect transistor according to claim 1, wherein a heat absorbing plate (10) is fixedly embedded in the inner walls of the two supporting plates (13), a heat conducting scale plate (2) is fixedly connected to the upper surface of the heat absorbing plate (10), and the top end of the heat conducting scale plate (2) penetrates through the protective shell (1) and extends to the upper side of the protective shell (1).
CN202221753042.9U 2022-07-08 2022-07-08 Semiconductor MOS field effect transistor Active CN217822746U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202221753042.9U CN217822746U (en) 2022-07-08 2022-07-08 Semiconductor MOS field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202221753042.9U CN217822746U (en) 2022-07-08 2022-07-08 Semiconductor MOS field effect transistor

Publications (1)

Publication Number Publication Date
CN217822746U true CN217822746U (en) 2022-11-15

Family

ID=83962930

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202221753042.9U Active CN217822746U (en) 2022-07-08 2022-07-08 Semiconductor MOS field effect transistor

Country Status (1)

Country Link
CN (1) CN217822746U (en)

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