CN217781273U

CN217781273U - Double-cavity atomic layer deposition air inlet structure

Info

Publication number: CN217781273U
Application number: CN202221577803.XU
Authority: CN
Inventors: 陈明哲
Original assignee: Wuxi Ketewell Electronic Technology Co ltd
Current assignee: Wuxi Ketewell Electronic Technology Co ltd
Priority date: 2022-06-22
Filing date: 2022-06-22
Publication date: 2022-11-11
Anticipated expiration: 2032-06-22

Abstract

The utility model relates to a two-chamber atomic layer deposition inlet structure, outer cavity and interior chamber including nested setting, outer cavity bottom is equipped with heater, objective table, interior chamber is located the objective table, and the both ends of interior chamber are equipped with exhaust tube, precursor diffuser respectively, even gas subassembly is installed to precursor diffuser's tip, and even gas subassembly includes the even gas piece of a plurality of axial stack. The utility model has the advantages of being compact and reasonable in structure, convenient operation, outer cavity have the heating structure, and inside still is equipped with the objective table, and interior cavity has independent air bleed structure, and the front end of interior cavity has conical precursor diffuser, and there is even gas subassembly the front end of precursor diffuser, can be when gas injection precursor diffuser, the diffusivity of reinforcing precursor source.

Description

Double-cavity atomic layer deposition air inlet structure

Technical Field

The utility model belongs to the technical field of vacuum film preparation technique and specifically relates to a two-chamber atomic layer deposition inlet structure.

Background

Atomic layer deposition is currently an advanced thin film deposition technique. Most current atomic layer deposition is surface deposition of a single plane, such as a silicon wafer. The chamber is smaller, and the difficulty of precursor diffusion is smaller.

If the structure of a large batch of samples is simply enlarged when deposited, the gas at the position of the precursor in the cavity is easily unevenly distributed due to the increase of the diffusion distance, and the thickness of the film of each growth surface of the product is uneven; meanwhile, the heating structure of the single-cavity hot plate is not easy to expand, and the heating is not uniform in space; the hot plate or single cavity structure is not easy to maintain, the internal heating can cause excessive dead angles of air flow, and a large amount of particles are generated in the deposition process.

SUMMERY OF THE UTILITY MODEL

The applicant aims at the defects in the prior art and provides a double-cavity atomic layer deposition air inlet structure with a reasonable structure, the double-cavity atomic layer deposition air inlet structure is provided with an inner cavity and an outer cavity, the two cavities respectively provide heating and air pumping functions, and a three-dimensional air homogenizing structure is additionally arranged, so that the diffusivity of air is improved.

The utility model discloses the technical scheme who adopts as follows:

a double-cavity atomic layer deposition air inlet structure comprises an outer cavity and an inner cavity which are nested,

the bottom of the outer chamber is provided with a heater and an object stage,

the inner chamber is located on the objective table, the two ends of the inner chamber are respectively provided with an exhaust pipe and a precursor diffuser, the end part of the precursor diffuser is provided with a gas homogenizing assembly, and the gas homogenizing assembly comprises a plurality of axially superposed gas homogenizing sheets.

As a further improvement of the above technical solution:

the precursor diffuser comprises a connecting flange and a top flange which are coaxially arranged, and the gas homogenizing sheet is superposed between the connecting flange and the top flange.

And one side of the air homogenizing sheet facing the top flange is also provided with a flange sheet.

And the flange plate is provided with a pipe joint.

The pipe joints on the top flange are vertically led out from the circle center of the top flange, the pipe joints on the flange pieces are led out perpendicular to the axis of the precursor diffuser, and the pipe joints on the adjacent flange pieces are arranged in a staggered mode.

All of the pipe joints are in a circumferential annular array of precursor diffusers.

The number range of the air distributing pieces is 1-10, and each air distributing piece is provided with air holes which are coaxially arranged or staggered.

The precursor diffuser of the inner chamber is arranged to be conical, and the precursor diffuser is arranged at the tip of the cone.

One end of the exhaust tube, which is connected with the inner chamber, is provided with a wedge-shaped opening, and one end of the exhaust tube, which is deviated from the inner chamber, penetrates through the bottom wall of the outer chamber and extends out.

The upper limit of the heating temperature range of the outer chamber is 300 ℃.

The beneficial effects of the utility model are as follows:

the utility model has the advantages of being compact and reasonable in structure, convenient operation, outer cavity have the heating structure, and inside still is equipped with the objective table, and interior chamber has independent air exhaust structure, and the front end of interior chamber has conical precursor diffuser, and the front end of precursor diffuser has even gas subassembly, can be when gas injection precursor diffuser, the diffusivity of reinforcing precursor source.

The utility model discloses atomic layer deposition's enlarged problem has been improved, the double-chamber structure can the even heating to reduce the diffusion dead angle, strengthen the maintainability.

The utility model discloses in add independent precursor diffusion cavity, through even gas, promote the source diffusion condition of cavity, improve the film homogeneity.

The gas homogenizing structure is formed by superposing a plurality of gas homogenizing pieces, each gas homogenizing piece is provided with a gas hole, a three-dimensional channel is formed between the gas holes after the gas homogenizing pieces are stacked, the gas hole channels are favorable for source diffusion, and the number of the gas homogenizing pieces can be adjusted according to actual working conditions, so that the optimal solution of diffusion is achieved.

The utility model is used for multiple purposes such as catalytic material preparation, semiconductor material preparation, solar photovoltaic device.

Drawings

Fig. 1 is a schematic view of the overall structure of the present invention.

Fig. 2 is a schematic view of the overall structure at another viewing angle of the present invention.

Fig. 3 is a schematic view of the inner chamber structure of the present invention.

Fig. 4 is a schematic view of the gas-homogenizing structure of the present invention.

Fig. 5 is a schematic view of another view angle of the gas distributing structure of the present invention.

Fig. 6 is an overall sectional view of the present invention.

Fig. 7 is a cross-sectional view of an enlarged view of a portion a of fig. 6 for showing the gas uniformizing structure.

Wherein: 1. an outer chamber; 2. an inner chamber; 3. a heater; 4. an object stage; 5. an air homogenizing assembly;

201. an air exhaust pipe; 202. a precursor diffuser;

501. homogenizing; 502. a connecting flange; 503. a top flange; 504. a flange sheet; 505. a pipe joint; 203. a wedge-shaped opening.

Detailed Description

The following describes embodiments of the present invention with reference to the drawings.

As shown in fig. 1-7, the dual-chamber ald gas inlet structure of the present embodiment includes an outer chamber 1 and an inner chamber 2 that are nested,

the bottom of the outer chamber 1 is provided with a heater 3 and an object stage 4,

the inner chamber 2 is located on the stage 4, the two ends of the inner chamber 2 are respectively provided with an exhaust pipe 201 and a precursor diffuser 202, the end of the precursor diffuser 202 is provided with a gas homogenizing assembly 5, and the gas homogenizing assembly 5 comprises a plurality of gas homogenizing sheets 501 which are axially overlapped.

The precursor diffuser 202 includes a connecting flange 502 and a top flange 503 coaxially disposed, and the gas distribution sheet 501 is disposed between the connecting flange 502 and the top flange 503 in an overlapping manner.

The side of the air distribution piece 501 facing the top flange 503 is also provided with a flange piece 504.

The flange plate 504 is provided with a pipe joint 505.

The pipe joints 505 on the top flange 503 are vertically led out from the center of the top flange 503, the pipe joints 505 on the flange pieces 504 are led out perpendicular to the axis of the precursor diffuser 202, and the pipe joints 505 on the adjacent flange pieces 504 are arranged in a staggered mode.

All of the pipe joints 505 are in a circumferential annular array on the precursor diffuser 202.

The number of the air homogenizing pieces 501 ranges from 1 to 10, and each air homogenizing piece 501 is provided with air holes which are coaxially arranged or staggered.

The precursor diffuser 202 of the inner chamber 2 is arranged in a cone shape, and the precursor diffuser 202 is mounted at the tip position of the cone.

One end of the exhaust tube 201 connected with the inner chamber 2 is provided with a wedge-shaped opening 203, and one end of the exhaust tube 201 departing from the inner chamber 2 penetrates through the bottom wall of the outer chamber 1 to extend out.

The upper limit of the heating temperature range of the outer chamber 1 is 300 degrees celsius.

The specific structure and working process of the embodiment are as follows:

as shown in fig. 1 and fig. 2, which are overall schematic views of an embodiment of the present invention, the present invention includes an outer chamber 1 and an inner chamber 2. Wherein outer chamber 1 is as the shell, and there is the base to support the bottom, is equipped with heater 3 on outer chamber 1's diapire, sets up objective table 4 on the heater 3, and when heater 3 heated, with objective table 4 release heat energy together, heater 3 and objective table 4 all are similar with interior chamber 2's diapire size, increase heat conduction area, guarantee hot-conductive homogeneity and conduction speed.

The inner chamber 2 is divided into a head end and a tail end, the tail end is a plane, the head end is provided with a conical precursor diffuser 202, and the tip of the precursor diffuser 202 is provided with a gas homogenizing assembly 5. The tail end of the inner cavity 2 is provided with a wedge-shaped opening 203, an exhaust pipe 201 is led out from the wedge-shaped opening 203, the exhaust pipe 201 extracts the air flow in the inner cavity 2, so that the air flow in the inner cavity 2 passes through the air evening assembly 5 and the precursor diffuser 202 to form an air flow flowing from the head end to the tail end in the inner cavity 2, and the exhaust pipe 201 penetrates through the bottom wall of the outer cavity 1 to extend out.

In an embodiment of the utility model, as shown in fig. 4, 5 and 7, even gas subassembly 5 is including flange 502, even gas piece 501, flange piece 504 and the top flange 503 that sets gradually, and wherein even gas piece 501 and flange piece 504 are equipped with the multi-disc, have drawn forth the coupling 505 on each flange piece 504, are equipped with the gas pocket on each even gas piece 501. The gas pocket can crisscross setting also can coaxial setting, no matter crisscross setting or coaxial setting, and gas can both flow in the gap between gas pocket and the lamellar body. In order to facilitate positioning and installation, the mode that the air holes of the air homogenizing sheet 501 are coaxially arranged is adopted in the embodiment. The top flange 503, the flange plate 504, the gas distribution plate 501 and the connecting flange 502 are connected by connecting members such as pins or screws.

In this embodiment, the gas passes through the gas homogenizing assembly 5 and then the precursor diffuser 202, and the gas is fully diffused and flowed in the inner chamber 2 under the pumping action of the pumping pipe 201, thereby ensuring the uniformity and reliability of the atomic layer deposition.

The above description is for the purpose of explanation and not limitation of the invention, which is defined in the claims, and any modifications may be made within the scope of the invention.

Claims

1. A double-cavity atomic layer deposition air inlet structure is characterized in that: comprises an outer chamber (1) and an inner chamber (2) which are arranged in a nested way,

the bottom of the outer chamber (1) is provided with a heater (3) and an object stage (4),

inner chamber (2) are located objective table (4), and the both ends of inner chamber (2) are equipped with exhaust tube (201), precursor diffuser (202) respectively, even gas subassembly (5) are installed to the tip of precursor diffuser (202), and even gas subassembly (5) include even gas piece (501) of a plurality of axial stack.

2. The dual chamber atomic layer deposition gas inlet structure of claim 1, wherein: the precursor diffuser (202) comprises a connecting flange (502) and a top flange (503) which are coaxially arranged, and the gas homogenizing sheet (501) is arranged between the connecting flange (502) and the top flange (503) in an overlapping mode.

3. The dual chamber atomic layer deposition gas inlet structure of claim 2, wherein: and a flange piece (504) is further installed on one side, facing the top flange (503), of the air homogenizing piece (501).

4. The dual chamber atomic layer deposition gas inlet structure of claim 3, wherein: and a pipe joint (505) is arranged on the flange sheet (504).

5. The dual chamber atomic layer deposition gas inlet structure of claim 4, wherein: the pipe joints (505) on the top flange (503) are vertically led out from the circle center of the top flange (503), the pipe joints (505) on the flange sheets (504) are led out perpendicular to the axis of the precursor diffuser (202), and the pipe joints (505) on the adjacent flange sheets (504) are arranged in a staggered mode.

6. The dual chamber atomic layer deposition gas inlet structure of claim 3, wherein: all of the pipe joints (505) are in a circumferential annular array at the precursor diffuser (202).

7. The dual chamber atomic layer deposition gas inlet structure of claim 2, wherein: the number of the air homogenizing pieces (501) ranges from 1 to 10, and each air homogenizing piece (501) is provided with air holes which are coaxially arranged or staggered.

8. The dual chamber atomic layer deposition gas inlet structure of claim 1, wherein: the precursor diffuser (202) of the inner chamber (2) is arranged to be conical, and the precursor diffuser (202) is arranged at the tip of the cone.

9. The dual chamber atomic layer deposition gas inlet structure of claim 1, wherein: one end of the exhaust pipe (201) connected with the inner chamber (2) is provided with a wedge-shaped opening (203), and one end of the exhaust pipe (201) departing from the inner chamber (2) penetrates through the bottom wall of the outer chamber (1) to extend out.

10. The dual chamber atomic layer deposition gas inlet structure of claim 1, wherein: the upper limit of the heating temperature range of the outer chamber (1) is 300 ℃.