CN217757749U - Thermal field structure and single crystal furnace - Google Patents
Thermal field structure and single crystal furnace Download PDFInfo
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- CN217757749U CN217757749U CN202221944960.XU CN202221944960U CN217757749U CN 217757749 U CN217757749 U CN 217757749U CN 202221944960 U CN202221944960 U CN 202221944960U CN 217757749 U CN217757749 U CN 217757749U
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- field structure
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- heat insulation
- thermal
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- 239000013078 crystal Substances 0.000 title claims abstract description 29
- 238000009413 insulation Methods 0.000 claims abstract description 67
- 238000010438 heat treatment Methods 0.000 claims abstract description 52
- 238000004321 preservation Methods 0.000 claims abstract description 30
- 239000011810 insulating material Substances 0.000 claims description 5
- 230000000903 blocking effect Effects 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052760 oxygen Inorganic materials 0.000 abstract description 12
- 239000001301 oxygen Substances 0.000 abstract description 12
- 238000010276 construction Methods 0.000 description 16
- 238000012545 processing Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 5
- 230000002349 favourable effect Effects 0.000 description 5
- 238000009434 installation Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000000392 somatic effect Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The application relates to a thermal field structure and single crystal growing furnace, include along the direction of height of thermal field structure set gradually and enclose first heat preservation structure and second heat preservation structure, heating member and the heat insulating part of synthetic heat preservation chamber, the heat insulating part is located the below of heating member and is provided with the electric connection portion that dodges the breach and be used for dodging the heating member. The possibility that heat generated by the heating element is transmitted to the bottom space of the heat field structure can be reduced by arranging the heat insulation element, so that air convection is reduced, the oxygen content of the processed crystal bar is reduced, and the quality of the crystal bar is improved. The avoidance notch is used for avoiding the electric connection part, and the possibility of interference between the electric connection part and the heat insulation piece can be reduced.
Description
Technical Field
The application relates to the technical field of silicon processing, in particular to a thermal field structure and a single crystal furnace.
Background
Along with the development of technology, the application of monocrystalline silicon is more and more extensive, and when processing monocrystalline silicon, need heat the material, and in the heating process, the heat that the heating member produced can the downward transmission, leads to the bottom temperature rising of crucible, and oxygen in the air density reduces after the intensification, can upwards move, and then increases the oxygen content of crystal bar and leads to the quality of crystal bar not to accord with the demand.
SUMMERY OF THE UTILITY MODEL
The application provides a thermal field structure and a single crystal furnace, which are used for solving the problem that the heat of a thermal field is easy to spread downwards in the processing process.
The embodiment of the application provides a thermal field structure, the thermal field structure includes:
the heat insulation structure comprises a first heat insulation structure and a second heat insulation structure, the first heat insulation structure and the second heat insulation structure enclose a heat insulation cavity, and the second heat insulation structure is located below the first heat insulation structure along the height direction of the thermal field;
a heating element mounted to the first thermal structure;
the heat insulation part is positioned in the heat insulation cavity, arranged along the circumferential direction of the heat insulation cavity and positioned below the heating element along the height direction of the thermal field structure;
wherein, the heat insulating part includes dodging the breach, dodge the breach and be used for dodging the electric connection portion of heating member.
In a possible embodiment, the heat insulation element includes a main body and a flange, the flange is disposed along a circumferential direction of the main body and protrudes outward along a radial direction of the main body, and the avoidance gap penetrates through the main body along a height direction of the thermal field structure;
the flange is located between the first heat preservation structure and the second heat preservation structure.
In a possible embodiment, there is a gap between the body portion and the insulation structure, the gap being provided with an insulating material.
In a possible embodiment, the thermal field structure further includes at least one support portion, the support portion and the flange are located on two opposite sides of the body portion along a height direction of the thermal field structure, and the support portion is detachably connected to the body portion for blocking the gap.
In a possible embodiment, the projected area of the avoiding gap in the thickness direction of the thermal field structure accounts for 10% to 20% of the projected area of the flange.
In a possible embodiment, the thermal field structure further includes an electrical connection portion, and the electrical connection portion is located below the heating element and electrically connected to the heating element along a height direction of the thermal field structure;
at least part of the electrical connection portion is located at the relief notch.
In one possible embodiment, the distance between the electrical connection and the side wall of the recess is 5 to 20 mm.
In one possible embodiment, the distance between the heating element and the thermal insulation element in the height direction of the thermal field structure is 10 mm to 30 mm.
In one possible embodiment, the heating element comprises at least two relief notches.
The application also provides a single crystal furnace, which comprises the thermal field structure.
The utility model relates to a thermal field structure, include along the direction of height of thermal field structure set gradually and enclose first heat preservation structure and second heat preservation structure, heating member and the thermal-insulated piece in synthetic heat preservation chamber, the thermal-insulated piece is located the below of heating member and is provided with the electric connection portion that dodges the breach and be used for dodging the heating member. The possibility that heat generated by the heating element is transmitted to the bottom space of the heat field structure can be reduced by arranging the heat insulation element, so that air convection is reduced, the oxygen content of the processed crystal bar is reduced, and the quality of the crystal bar is improved. The avoidance notch is used for avoiding the electric connection part, so that the possibility of interference between the electric connection part and the heat insulation piece can be reduced.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application.
Drawings
FIG. 1 is a schematic structural view of a thermal field structure provided herein;
FIG. 2 is a cross-sectional view of FIG. 1;
FIG. 3 is a schematic view of the construction of the insulation provided herein;
FIG. 4 is a cross-sectional view from another perspective of FIG. 1;
FIG. 5 is an enlarged view of a portion of the location I in FIG. 4;
FIG. 6 is a schematic view of the construction of the insulation and support provided herein;
fig. 7 is a schematic structural diagram of the supporting portion provided in the present application.
Reference numerals:
1-a heat preservation structure;
11-a first insulating structure;
12-a second insulation structure;
13-heat preservation cavity;
2-a heating element;
3-a thermal insulation;
31-a body portion;
311-avoiding the gap;
32-flanging;
4-an electrical connection;
5-clearance;
6-a support part;
61-connecting hole.
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and together with the description, serve to explain the principles of the application.
Detailed Description
For better understanding of the technical solutions of the present application, the following detailed descriptions of the embodiments of the present application are provided with reference to the accompanying drawings.
It should be understood that the embodiments described are only a few embodiments of the present application, and not all embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application without making any creative effort belong to the protection scope of the present application.
The terminology used in the embodiments of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in the examples of this application and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
It should be understood that the term "and/or" as used herein is merely one type of association that describes an associated object, meaning that three relationships may exist, e.g., a and/or B may mean: a exists alone, A and B exist simultaneously, and B exists alone. In addition, the character "/" herein generally indicates that the former and latter related objects are in an "or" relationship.
It should be noted that the terms "upper", "lower", "left", "right", and the like used in the embodiments of the present application are described in terms of the angles shown in the drawings, and should not be construed as limiting the embodiments of the present application. In addition, in this context, it will also be understood that when an element is referred to as being "on" or "under" another element, it can be directly on "or" under "the other element or be indirectly on" or "under" the other element via an intermediate element.
As shown in fig. 1 and fig. 2, the embodiment of the present application provides a thermal field structure, which can be applied to a single crystal furnace for processing a crystal bar. The thermal field structure comprises a heat preservation structure 1, a heating element 2 and a heat insulation element 3. Wherein insulation construction 1 includes first insulation construction 11 and second insulation construction 12, and along the direction of height of thermal field structure, second insulation construction 12 is located the below of first insulation construction 11, and just first insulation construction 11 and second insulation construction 12 enclose synthetic heat preservation chamber 13. The first heat preservation structure 11 can be a middle heat preservation cylinder, the second heat preservation structure 12 can be a lower heat preservation cylinder, the thermal field structure can further include a third heat preservation structure 1 (not shown in the figure), the third heat preservation structure 1 is located above the first heat preservation structure 11 along the height direction of the thermal field structure, and the third heat preservation structure 1 can be used as an upper heat preservation cylinder. The heating element 2 is mounted to the first heat-insulating structure 11. The heating member 2 may be annular and arranged along the inner wall of the insulating chamber 13. The heat insulation piece 3 is positioned in the heat preservation cavity 13 and arranged along the circumferential direction of the heat preservation cavity 13. The thermal insulation 3 is located below the heating element 2 in the height direction of the thermal field structure. The heating member 2 is provided with an avoiding notch 311, and the avoiding notch 311 is used for avoiding the electric connection part 4 of the heating member 2.
In general, the inner diameters of the heat preservation cylinders of the thermal field structure are the same, the main heater is arranged on the inner side of the heat preservation cylinder, and a large amount of heat generated by heating can radiate heat to the bottom space of the thermal field in a heat radiation mode in the use process, so that the bottom temperature of the thermal field is increased. When the temperature of the bottom of the thermal field rises, the air at the bottom of the thermal field is heated to expand, so that the density is reduced, the hot air with lower density gradually rises, the requirement on oxygen content during processing is higher, and the quality of the crystal bar is influenced. For example, when processing an N-type ingot, the oxygen content of the N-type ingot is required to be lower than that of a P-type ingot, and therefore, a thermal field used for processing a commonly used P-type ingot cannot be applied to processing the N-type ingot.
The scheme that this application embodiment provided, through set up the heat insulating part 3 that is located heating member 2 below in heat preservation chamber 13, can change a heat preservation section of thick bamboo's internal diameter, and reach thermal-insulated effect, be favorable to reducing the produced heat of heating member 2 and spread to the bottom space of heat field structure, thereby make the inside vertical convection current of heat field structure weaken, reduce the air of upwards carrying, thereby be favorable to reducing the oxygen content of the crystal bar of processing, with the quality that improves the crystal bar, accord with actual user demand more. Through practical tests, the oxygen content of the crystal bar can be reduced by 0.5-1ppma by adopting the scheme provided by the embodiment of the application. The escape notches 311 are used to escape the electrical connection portions 4 of the heating members 2 to reduce the possibility of interference between the heat insulating members 3 and the heating members 2.
As shown in fig. 3 to 5, in one possible embodiment, the heat insulating element 3 includes a main body 31 and a flange 32, the main body 31 may be annular, the flange 32 is disposed along a circumferential direction of the main body 31 and protrudes outward along a radial direction of the main body 31, and the avoiding notch 311 penetrates through the main body 31 along a height direction of the thermal field structure. The flange 32 is located between the first insulation structure 11 and the second insulation structure 12.
Through making turn-ups 32 be located between first insulation construction 11 and the second insulation construction 12, can be through the direction of height centre gripping turn-ups 32 of first insulation construction 11 and second insulation construction 12 edge thermal field structure to relative position precision when being favorable to improving the installation of heat insulating part 3, and can reduce the installation degree of difficulty of heat insulating part 3, accord with actual user demand more.
In general, the heating portion of the heating member 2 is located below the main body of the heating member 2 and extends downward along the height direction of the thermal field, and therefore, the avoiding notch 311 penetrates through the body portion 31 of the thermal insulation member 3 along the height direction, so that the possibility of interference between the electrical connection portion 4 and the body portion 31 can be reduced, the structure of the thermal field is more reasonable, and the actual use requirement is more met.
In a possible embodiment, as shown in fig. 5, there is a gap 5 between the body 31 and the insulation structure 1, i.e. there is a gap 5 between the body 31 and the inner wall of the insulation chamber 13. An insulating material may be provided in the gap 5.
Through reserving corresponding clearance 5 between this somatic part 31 and insulation construction 1 to pack thermal insulation material in clearance 5 and can be favorable to further improving heat-proof effect of heat-insulating part 3, thereby can effectively reduce the heat of spreading to the bottom space of heat field structure, and then can weaken the vertical convection current of heat field structure, thereby can reduce the air of upwards carrying, with the oxygen content that reduces the crystal bar, thereby improve the quality of crystal bar.
In a possible embodiment, as shown in fig. 6, the thermal field structure further comprises at least one support portion 6, the support portion 6 and the flange 32 are located on opposite sides of the body portion 31 in the height direction of the thermal field structure, and the support portion 6 is detachably connected to the body portion 31 for blocking the gap 5.
The provision of the support portion 6 facilitates the sealing of the gap 5 between the body portion 31 and the heat insulating structure 1, thereby reducing the possibility of the heat insulating material filled in the gap 5 falling off.
Specifically, since the escape notch 311 penetrates through the body 31, the body 31 may be a discontinuous ring structure, and a plurality of supporting portions 6 may be provided for blocking the gap 5 between the body 31 and the insulation structure 1 in different sections.
As shown in fig. 7, the support portion 6 may have an arc shape and a width of 36 mm, the support portion 6 may be provided with a plurality of connection holes 61, the diameter of the connection holes 61 may be 10 mm, and adjacent connection holes 61 may be equidistantly arranged.
The heating element 2 is used as a main heater, the single crystal furnace can also comprise a bottom heater, and the temperature of the bottom of the thermal field structure is relatively low due to the existence of the heat insulation element 3 in the process of melting, so that the power of the bottom heater needs to be increased to improve the efficiency of the melting material. The bottom heater is turned off during the crystal pulling process to weaken convection inside the thermal field, thereby reducing oxygen delivered upwards and further reducing the oxygen content of the ingot.
In a possible embodiment, the projected area of the avoiding notch 311 occupies 10% to 20% of the projected area of the flange 32 in the thickness direction of the thermal field structure, and the avoiding notch 311 may penetrate through part of the flange 32.
Through the design, the flanging 32 of the heat insulation piece 3 has a sufficient area to be connected with the first heat insulation structure 11 and the second heat insulation structure 12, so that the influence of the avoidance gap 311 on the installation strength of the heat insulation piece 3 is reduced, the possibility of falling off of the heat insulation piece 3 is reduced, and the improvement of the installation stability of the heat insulation piece 3 is facilitated.
In one possible embodiment, the dimension m of the body portion 31 in the height direction of the thermal field structure may satisfy: m is more than 0 mm and less than or equal to 480 mm. The specific size of the body portion 31 can be adjusted according to actual requirements and actual size of the single crystal furnace. Of course, the main body 31 may not be provided, but when the main body 31 is not provided, the heat insulating material cannot be filled, so that the heat insulating effect is relatively low, and the solution provided in the embodiment of the present application preferably adopts the solution including the main body 31.
In one possible embodiment, as shown in fig. 4, the thermal field structure further includes an electrical connection portion 4, and the electrical connection portion 4 is located below the heating member 2 and electrically connected to the heating member 2 along the height direction of the thermal field structure. At least a part of the electrical connection portion 4 is located at the relief notch 311.
By providing the relief notch 311 to accommodate the electrical connection portion 4, the possibility of interference between the electrical connection portion 4 and the heat insulator 3 can be reduced.
In one possible embodiment, the distance between the electrical connection 4 and the side wall of the recess 311 is 5 to 20 mm.
Through the design, the requirement on the relative position precision between the electric connection part 4 and the avoidance notch 311 can be reduced, so that the possibility of interference between the electric connection part 4 and the heat insulation piece 3 during installation is reduced, and the actual use requirement is met better.
In a possible embodiment, the distance between the heating element 2 and the thermal insulation element 3 in the height direction of the thermal field structure is 10 mm to 30 mm.
Through reserve corresponding distance between heating member 2 and heat insulating part 3 to can reduce when striking sparks, the electric arc that heating member 2 produced can concentrate the possibility that heat insulating part 3 leads to heat insulating part 3 to damage, be favorable to prolonging the life of thermal field structure, accord with the user demand of reality more.
In one possible embodiment, as shown in fig. 3, the heating element 2 comprises at least two escape notches 311.
In general, the heating member 2 has two electrical connection portions 4, and the relief notch 311 may be disposed corresponding to the electrical connection portion 4 according to the position of the electrical connection portion 4.
Based on the thermal field structures provided by the above embodiments, embodiments of the present application also provide a single crystal furnace, which may include the thermal field structure according to any of the above embodiments, and a crucible and other components, and is used for processing an ingot. As the thermal field has the technical effects, the single crystal furnace comprising the thermal field structure also has the corresponding technical effects, which are not described again.
The embodiment of the application provides a thermal field structure and single crystal growing furnace, include along the direction of height of thermal field structure set gradually and enclose first insulation construction 11 and second insulation construction 12, heating member 2 and heat insulating part 3 of synthetic heat preservation chamber 13, heat insulating part 3 is located the below of heating member 2 and is provided with dodge breach 311 and is used for dodging the electric connection portion 4 of heating member 2. The possibility that the heat generated by the heating element 2 is transmitted to the bottom space of the heat field structure can be reduced by arranging the heat insulation element 3, so that the air convection is reduced, the oxygen content of the processed crystal bar is reduced, and the quality of the crystal bar is improved. The escape notch 311 is used to escape the electrical connection portion 4, and can reduce the possibility of interference between the electrical connection portion 4 and the heat insulator 3.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (10)
1. A thermal field structure, comprising:
the heat insulation structure (1) comprises a first heat insulation structure (11) and a second heat insulation structure (12), the first heat insulation structure (11) and the second heat insulation structure (12) enclose a heat insulation cavity (13), and the second heat insulation structure (12) is located below the first heat insulation structure (11) along the height direction of the thermal field structure;
a heating element (2), the heating element (2) being mounted to the first heat retaining structure (11);
the heat insulation piece (3) is positioned in the heat preservation cavity (13), arranged along the circumferential direction of the heat preservation cavity (13), and positioned below the heating piece (2) along the height direction of the thermal field structure;
the heat insulation part (3) comprises an avoiding gap (311), and the avoiding gap (311) is used for avoiding the electric connection part (4) of the heating part.
2. The thermal field structure according to claim 1, wherein the heat insulating member (3) comprises a main body portion (31) and a flange (32), the flange (32) is disposed along a circumferential direction of the main body portion (31) and protrudes outward in a radial direction of the main body portion (31), and the relief notch (311) penetrates through the main body portion (31) in a height direction of the thermal field structure;
the flanging (32) is positioned between the first heat-insulating structure (11) and the second heat-insulating structure (12).
3. A thermal field structure according to claim 2, characterized in that there is a gap (5) between the body portion (31) and the insulation structure (1), the gap (5) being provided with an insulating material.
4. A thermal field structure according to claim 3, characterized in that the thermal field structure further comprises at least one support part (6), the support part (6) and the flange (32) being located on opposite sides of the body part (31) in the height direction of the thermal field structure, the support part (6) being detachably connected to the body part (31) for blocking the gap (5).
5. The thermal field structure of claim 2, wherein a projected area of the relief notch (311) in a thickness direction of the thermal field structure is 10% to 20% of a projected area of the cuff.
6. A thermal field structure according to any one of claims 1 to 5, characterized in that the thermal field structure further comprises an electrical connection (4), the electrical connection (4) being located below the heating element (2) and electrically connected to the heating element (2) in a height direction of the thermal field structure;
at least part of the electrical connection part (4) is located in the escape notch (311).
7. The thermal field structure according to claim 6, characterized in that the distance between the electrical connection (4) and the side wall of the relief notch (311) is 5 to 20 mm.
8. A thermal field structure according to any of claims 1 to 5, characterized in that the distance between the heating element (2) and the thermal insulation element (3) in the height direction of the thermal field structure is 10 to 30 mm.
9. The thermal field structure according to any of claims 1 to 5, characterized in that the heating element (2) comprises at least two relief notches (311).
10. A single crystal furnace, characterized in that it comprises a thermal field structure according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221944960.XU CN217757749U (en) | 2022-07-26 | 2022-07-26 | Thermal field structure and single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221944960.XU CN217757749U (en) | 2022-07-26 | 2022-07-26 | Thermal field structure and single crystal furnace |
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| Publication Number | Publication Date |
|---|---|
| CN217757749U true CN217757749U (en) | 2022-11-08 |
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| CN202221944960.XU Active CN217757749U (en) | 2022-07-26 | 2022-07-26 | Thermal field structure and single crystal furnace |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116759188A (en) * | 2023-08-15 | 2023-09-15 | 苏州八匹马超导科技有限公司 | Superconducting magnet |
-
2022
- 2022-07-26 CN CN202221944960.XU patent/CN217757749U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116759188A (en) * | 2023-08-15 | 2023-09-15 | 苏州八匹马超导科技有限公司 | Superconducting magnet |
| CN116759188B (en) * | 2023-08-15 | 2023-11-03 | 苏州八匹马超导科技有限公司 | Superconducting magnet |
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