CN217757748U - Baffle plate assembly for crucible and crystal growth equipment - Google Patents

Abstract

The utility model discloses a baffle subassembly and crystal growth equipment for crucible, the baffle subassembly includes baffle and drive arrangement, the baffle includes first baffle, first baffle forms to loop configuration, drive arrangement links to each other with first baffle and reciprocates along the axial of first baffle with the first baffle of drive, first baffle has primary importance and second place, the second place is located the top of primary importance, at the primary importance, the axial both ends of first baffle are located the top of fuse-element liquid level in the crucible respectively, the below, and the periphery wall of first baffle is suitable for and ends the interior perisporium in the crucible, at the second place, first baffle interval position is in the top of fuse-element liquid level. According to the utility model discloses a baffle subassembly for crucible can prolong the life of crucible, and is convenient for promote the material speed of changing, guarantees the crystal quality.

Description

Baffle plate assembly for crucible and crystal growth equipment

Technical Field

The utility model belongs to the technical field of the crystal growth technique and specifically relates to a baffle subassembly and crystal growth equipment for crucible is related to.

Background

In the related art, when a crucible such as a quartz crucible is used, the crucible is softened and collapses inwards due to being in a high-temperature environment for a long time, so that the service life of the crucible is influenced; and the melt in the crucible can erode the crucible inner wall and cause serious corruption, and impurity in the crucible can get into the melt, influences the quality of crystal, further influences the life of crucible simultaneously.

SUMMERY OF THE UTILITY MODEL

The utility model discloses aim at solving one of the technical problem that exists among the prior art at least. Therefore, the utility model provides a baffle subassembly for crucible, the life of crucible can be prolonged to the baffle subassembly, and is convenient for promote the material speed of changing, guarantees the crystal quality.

The utility model discloses still provide a crystal growth equipment of having above-mentioned baffle subassembly.

According to the utility model discloses a baffle subassembly for crucible of first aspect embodiment includes: a baffle comprising a first baffle formed as an annular structure; the driving device is connected with the first baffle to drive the first baffle to move up and down along the axial direction of the first baffle, the first baffle is provided with a first position and a second position, the second position is located above the first position, the first position is provided, the two axial ends of the first baffle are respectively located above and below the current liquid level in the crucible, the peripheral wall of the first baffle is suitable for being stopped against the inner peripheral wall of the crucible, and the first baffle is located above the highest liquid level in the crucible at intervals at the second position.

According to the utility model discloses a baffle subassembly for crucible, reciprocate along the axial of first baffle through setting up the first baffle of drive arrangement drive, make first baffle have primary importance and second place, and when the primary importance, first baffle can play the supporting role to crucible internal perisporium, guarantee crucible stable in structure, can weaken the erosion and corrosion of fuse-element to the crucible simultaneously, effectively prolong the life of crucible, when the second place, be convenient for guarantee to feed smoothly, first baffle can not block the heat transfer of changing the material in-process and can not be stained with the incomplete material of changing the material, be convenient for guarantee to change the material speed, be convenient for reduce the time that first baffle is in high temperature state simultaneously, be favorable to prolonging the life of baffle subassembly.

In some embodiments, the driving device comprises a driving mechanism and a telescopic mechanism, and the driving mechanism is connected with the telescopic mechanism to drive the first baffle to move up and down through telescopic deformation of the telescopic mechanism; or, drive arrangement still includes drive mechanism, drive mechanism includes and rotates piece and moving member, the moving member with first baffle links to each other, drive mechanism with rotate the piece and link to each other in order to pass through it rotates to drive the moving member reciprocates.

In some embodiments, the baffle and the crucible are both quartz pieces, and the crucible comprises a transparent layer and a bubble layer which are arranged in sequence from inside to outside, wherein the transparent layer defines the inner peripheral wall of the crucible.

In some embodiments, the baffle further comprises: the second baffle plate is formed into an annular structure and is arranged on the radial inner side of the first baffle plate at intervals, and a communication opening penetrating along the radial direction of the second baffle plate is formed in the second baffle plate; the connecting piece, the connecting piece is connected first baffle with the second baffle, just the connecting piece is formed with along the axial through-hole that runs through of first baffle the first position, the bottom of second baffle is suitable for and ends in the inner diapire of crucible, the top interval of second baffle is located the top of current liquid level, just the connecting piece interval is located the top of current liquid level the second position, the second baffle with the connecting piece all interval is located the top of highest liquid level.

In some embodiments, the second baffle plate and the first baffle plate are coaxially arranged, the radial width of the connecting piece is x, and x is more than or equal to 100mm and less than or equal to 200mm.

In some embodiments, the through holes are multiple, and the multiple through holes are arranged at intervals along the circumference of the second baffle plate, wherein the connecting piece is formed into a flat plate structure; or the connecting piece comprises a plurality of sub-connecting pieces arranged at intervals along the circumferential direction of the second baffle, each sub-connecting piece is connected with the first baffle and the second baffle, and the through hole is defined between every two adjacent sub-connecting pieces.

In some embodiments, a plurality of hoisting connection portions are arranged at the top end of the second baffle plate, the hoisting connection portions are arranged at intervals along the circumferential direction of the second baffle plate, and each hoisting connection portion is connected with the driving device.

According to the utility model discloses crystal growth equipment of second aspect embodiment includes: a furnace body defining a furnace chamber; the crucible is arranged in the furnace cavity; a baffle subassembly, the baffle subassembly is according to the utility model discloses a baffle subassembly for crucible of above-mentioned first aspect embodiment, in the first position, the axial both ends of first baffle are located respectively top, the below of current liquid level, just the periphery wall of first baffle stop in the internal perisporium of crucible the second position, first baffle interval is located the top of highest liquid level.

According to the utility model discloses crystal growth equipment through adopting foretell baffle subassembly, can prolong the life of crucible, and is convenient for promote the material speed of changing, guarantees the crystal quality.

In some embodiments, the crystal growth apparatus further comprises: the guide flow cylinder is arranged in the furnace cavity and is suitable for being arranged between the crystal and the inner peripheral wall of the crucible at intervals, and the driving device is arranged on the guide flow cylinder.

In some embodiments, in the first position, the relative heights of the first baffle and the crucible are unchanged, and in the first position, the bottom end of the first baffle is located above the R-angle of the crucible; and/or, in the first position, the top end of the first baffle is flush with the top end of the crucible.

Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.

Drawings

The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:

fig. 1 is a cross-sectional view of a baffle assembly according to an embodiment of the present invention;

FIG. 2 is a schematic view of the baffle shown in FIG. 1;

FIG. 3 is a partial schematic view of a crystal growing apparatus according to one embodiment of the present invention, with the baffle in a first position;

FIG. 4 is another schematic view of the baffle assembly and crucible shown in FIG. 3 with the baffle in a second position.

Reference numerals:

a baffle plate assembly 1, a crucible 2, a first chamber 2a, a second chamber 2b,

A baffle plate 11,

A first baffle 111, a second baffle 112, a hoisting connecting part 1120, a connecting piece 113, a through hole 113a,

A drive means 12.

Detailed Description

Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present invention, and should not be construed as limiting the present invention.

The following disclosure provides many different embodiments, or examples, for implementing different features of the invention. In order to simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present disclosure provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize the applicability of other processes and/or the use of other materials.

Next, referring to the drawings, a baffle plate assembly 1 for a crucible 2 according to an embodiment of the present invention is described.

As shown in fig. 1, the barrier assembly 1 includes a barrier 11 and a driving device 12.

The baffle 11 includes a first baffle 111, and the first baffle 111 is formed in an annular structure. It should be noted that, in the description of the present application, "annular" is to be understood in a broad sense, i.e., not limited to "circular ring", but may also be "polygonal ring" or the like, for example. The driving device 12 is connected to the first baffle 111 to drive the first baffle 111 to move up and down along the axial direction of the first baffle 111, the first baffle 111 has a first position (shown in fig. 3) and a second position (shown in fig. 4), the second position is above the first position, for example, with reference to the upper end of the first baffle 111, and the upper end of the first baffle 111 in the second position is above the upper end of the first baffle 111 in the first position.

It is understood that the driving device 12 may be directly connected to the first baffle 111, or the driving device 12 may be indirectly connected to the first baffle 111, so long as the driving device 12 can drive the first baffle 111 to move up and down.

Wherein, in the first position, the axial both ends of first baffle 111 are located the top of present liquid level in crucible 2 respectively, the below, the axial upper end of first baffle 111 is located the top of present liquid level promptly, the axial lower extreme of first baffle 111 is located the below of present liquid level, make partly submergence of first baffle 111 in the fuse-element of crucible 2, another part is not submerged in the fuse-element, the periphery wall of first baffle 111 is suitable for stopping to support in the internal perisporium of crucible 2 simultaneously, make first baffle 111 can play certain supporting role to crucible 2, be favorable to making crucible 2 keep stable in structure, can weaken the corruption of fuse-element to crucible 2 simultaneously and erode, extension crucible 2 life.

At the second position, the first baffle 111 is located above the highest liquid level in the crucible 2 at intervals, so that the first baffle 111 is spaced from the material and the first baffle 111 is not in contact with the material, smooth charging is convenient to guarantee, and the material melting rate is guaranteed. The "maximum level" is understood to mean the maximum level that the melt allows, or is able to reach, during use of the crucible 2.

It can be seen that, since the highest liquid level does not exceed the top surface of the crucible 2, in the second position, the first baffle 111 may be spaced up and down from the crucible 2, or may be in abutting engagement with the inner peripheral wall of the crucible 2.

When the baffle assembly 1 is used for crystal growth equipment, the height position of the first baffle 111 can be reasonably adjusted according to the specific production process of the crystal, so that the crucible 2 is protected to a certain extent on the premise of ensuring that the production process is not influenced.

For example, before charging, the first baffle 111 can be driven to the second position by the driving device 12, so that the first baffle 111 of the material can not shield the crucible 2 in the charging process, smooth charging is ensured, meanwhile, the material can not collide with the first baffle 111, and the like, and the first baffle 111 can be prevented from being scratched and damaged by sharp parts of the material, or fragments of the first baffle 111 can not fall off, and the like, so that the whole pot of material can be prevented from being scrapped, the structural loss of the first baffle 111 can be avoided, and the crystal structure can be ensured; after the material loading is finished, when the material is melted, the first baffle 111 can still be kept at the second position, the first baffle 111 does not contact with the material, then the first baffle 111 can not block the heat transfer between the crucible 2 and the material, and can not block the heat transfer between the material and the material, so as to ensure the smooth heat conduction in the material melting process, which is favorable for improving the material melting rate, meanwhile, the material which is incomplete in the material melting process can be prevented from being stained on the first baffle 111 to prolong the material melting time, the loss of the first baffle 111 is avoided, thereby further ensuring the material melting rate, and because the temperature of the area where the material is located in the material melting process is higher, the first baffle 111 located at the second position can reduce the time that the first baffle 111 is located in a high temperature area, which is favorable for prolonging the service life of the first baffle 111.

After the material melting is completed, the driving device 12 can drive the first baffle 111 to the first position, the outer peripheral wall of the first baffle 111 can be stopped against the inner peripheral wall of the crucible 2 at the moment, so that the first baffle 111 can play a certain supporting role for the crucible 2, so as to prevent the crucible 2 from easily causing the crucible 2 to become soft and collapse inwards when being in the thermal process for a long time, thereby being convenient for ensuring the structural stability of the crucible 2, prolonging the service life of the crucible 2, meanwhile, the first baffle 111 can separate a part of melt from the inner peripheral wall of the crucible 2, reducing the contact area of the melt and the inner peripheral wall of the crucible 2, further weakening the scouring corrosion of the melt to the crucible 2, further prolonging the service life of the crucible 2, and avoiding impurities in the crucible 2, such as impurities in a bubble layer, from entering the melt, thereby ensuring the crystal quality.

According to the utility model discloses a baffle subassembly 1 for crucible 2, reciprocate along the axial of first baffle 111 through setting up first baffle 111 of drive arrangement 12 drive, make first baffle 111 have primary importance and second place, and when primary importance, first baffle 111 can play the supporting role to 2 internal perisporium of crucible, guarantee 2 stable in structure of crucible, can weaken the scouring corrosion of fuse-element to crucible 2 simultaneously, effectively prolong the life of crucible 2, when the second place, be convenient for guarantee to feed smoothly, first baffle 111 can not block the heat transfer of melting the material in-process and can not be stained with the incomplete material of melting material, be convenient for promote the material rate of melting, be convenient for simultaneously reduce the time that first baffle 111 is in high temperature state, be favorable to prolonging baffle subassembly 1's life.

It is to be understood that when the baffle plate assembly 1 of the present application is used in a crystal growing apparatus, the crystal growing apparatus may be used for crystal growth by the czochralski method (CZ method) or by the continuous czochralski method (CCZ method).

In some embodiments, the driving device 12 includes a driving mechanism that can provide driving power for the movement of the first shutter 111. For example, the driving mechanism may include an electric driving mechanism such as a motor, and/or a manual driving mechanism, etc., which may be manually operated by an operator to control the movement of the first shutter 111.

The driving device 12 further comprises a telescopic mechanism, the telescopic mechanism can be deformed in a telescopic manner, so that the length of the telescopic mechanism can be adjusted, and the driving mechanism is connected with the telescopic mechanism to drive the first baffle 111 to move up and down through the telescopic deformation of the telescopic mechanism, so that the first baffle 111 can be moved continuously. For example, the telescopic mechanism may be a driving cylinder (e.g., an electric cylinder, a hydraulic cylinder, etc.) or the like.

Of course, the present application is not limited thereto. In some embodiments, the driving device 12 further includes a transmission mechanism, the transmission mechanism includes a rotating member and a moving member, the moving member is connected to the first baffle 111, the driving mechanism is connected to the rotating member to drive the moving member to move up and down through the rotation of the rotating member, and the continuous movement of the first baffle 111 is also facilitated, which is simple in structure and convenient in operation. For example, the transmission mechanism comprises a lead screw and nut mechanism, the lead screw and nut mechanism comprises a lead screw and a nut which are matched in a threaded manner, the rotating part is one of the lead screw and the nut, and the moving part is the other one of the lead screw and the nut; for another example, the transmission mechanism may further include a rack and pinion mechanism, the rack and pinion mechanism includes a gear and a rack that are engaged with each other, the rotating member is a gear, and the moving member is a rack.

In some embodiments, as shown in fig. 1 and 3, the baffle 11 and the crucible 2 are both quartz pieces, and the crucible 2 comprises a transparent layer and a bubble layer which are arranged from inside to outside in sequence, wherein the transparent layer defines the inner peripheral wall of the crucible 2; the transparent layer prevents bubbles from entering the molten liquid, thereby reducing the density of air holes in the crystal and improving the quality of the crystal.

Therefore, when the first baffle 111 is in the first position, the peripheral wall of the first baffle 111 can be prevented from abutting against the transparent layer, and erosion corrosion of the transparent layer by the melt is reduced. The high-temperature silicon melt can react with the quartz crucible 2 under the action of natural convection and forced convection, and the most severe reaction area is the position where the liquid level is contacted with the inner wall of the crucible 2; when the silicon melt is in a high-temperature region for a long time, the transparent layer is seriously corroded, the melt enters the bubble layer, and impurities in the bubble layer enter the melt along with the melt, so that the crystal quality is low, pores are generated, and the breakage is easy to occur; drive arrangement 12 can drive first baffle 111 to the primary importance in this application to separate the stratum lucidum of melt liquid level and crucible 2, effectively weaken the corruption of fuse-element to the stratum lucidum, thereby reduce the bubble of long brilliant in-process quartz crucible release, so that guarantee crystalline quality, further guaranteed crucible 2's life simultaneously, can not increase crucible 2's cost simultaneously.

Wherein the transparent layer and the bubble layer are well known to those skilled in the art, for example, the transparent layer and the bubble layer are prepared by vacuum arc method, the transparent layer can be made by mixing high purity quartz sand powder with 99.9999% and a small amount of barium powder, and the bubble layer can be supported by quartz sand powder with purity lower than that in the transparent layer; the quartz sand powder contains air when melted at high temperature, the air can be removed under the vacuum condition, so that no air bubble exists in the transparent layer, the air bubble is diffused into the air bubble layer outside the transparent layer under the pressure difference, and the air bubble layer has a plurality of micro air bubbles in the manufacturing process because the purity of the quartz sand powder used by the air bubble layer is lower than that of the quartz sand powder in the transparent layer.

In some embodiments, as shown in fig. 1 and 2, the baffle 11 further includes a second baffle plate 112 and a connecting member 113, the second baffle plate 112 is formed into a ring structure, the second baffle plate 112 is spaced apart from the radially inner side of the first baffle plate 111, the connecting member 113 connects the first baffle plate 111 and the second baffle plate 112, and the connecting member 113 is spaced apart from the bottom end of the first baffle plate 111 and the bottom end of the second baffle plate 112, so that the baffle 11 is formed as a whole, at this time, the driving device 12 can be directly connected to the second baffle plate 112 to drive the first baffle plate 111 to move up and down, or the driving device 12 can be directly connected to the connecting member 113 to drive the first baffle plate 111 to move up and down, of course, the driving device 12 can also be indirectly connected to the second baffle plate 112 or the connecting member 113, and the up and down movement of the first baffle plate 111 can also be achieved.

The connecting member 113 is provided with a through hole 113a, and the through hole 113a penetrates through the connecting member 113 along the axial direction of the first baffle 111, so that the through hole 113a can realize the communication between the upper side and the lower side of the connecting member 113, and even if the baffle 1 is located at the first position, the communication between the upper side and the lower side of the connecting member 113 can be realized, which is convenient for ensuring that the airflow smoothly takes away particles and the like on the lower side of the connecting member 113, and ensures the crystal growth atmosphere.

As shown in fig. 3, in the first position, the bottom end of the second baffle 112 is adapted to abut against the inner bottom wall of the crucible 2, and the top end of the second baffle 112 is spaced above the current liquid level, so that the second baffle 112 can divide the holding space in the crucible 2 into a first chamber 2a and a second chamber 2b, the first chamber 2a is formed in the second baffle 112, the second chamber 2b is formed between the second baffle 112 and the inner peripheral wall of the crucible 2, and the second baffle 112 is formed with a communication port, the communication port penetrates through the second baffle 112 along the radial direction of the second baffle 112, and the communication port can communicate the first chamber 2a and the second chamber 2b; it can be seen that the second baffle 112 in the first position can form a "multi-crucible structure" with the crucible 2 in order to better meet the actual differential growth requirements of the crystal.

For example, in the example of fig. 3 and 4, the crucible 2 is in a "single crucible configuration", and in the first position, the second shutter 112 may divide the holding space inside the crucible 2 into two chambers, and the second shutter 112 may be formed in a "double crucible configuration" in cooperation with the crucible 2; the two chambers are respectively a first chamber 2a and a second chamber 2b, the first chamber 2a is located inside the second chamber 2b, the first chamber 2a may correspond to a crystal growth region, and the second chamber 2b may correspond to a blanking region, etc., so as to reduce the influence of other operations such as blanking (e.g., secondary feeding) on the melt level stability and ensure the stable growth of crystals.

It can be seen that crucible 2 and second baffle 112 cooperate and can realize the function of two crucible structures, and crucible 2 can need not to set up to two crucible structures, is favorable to reducing the cost of crucible 2, reduces the processing degree of difficulty, simultaneously because second baffle 112 can remove to the second position, second baffle 112 and crucible 2 of this application for the two crucibles in the correlation technique, second baffle 112 can not block the heat-conduction of melting the material in-process, be convenient for promote the melting rate.

Meanwhile, in the first position, the connecting piece 113 is positioned above the current liquid level at intervals, so that the connecting piece 113 is not in contact with the melt, and the through hole 113a communicates the space on the upper side of the connecting piece 113 with the space on the lower side of the connecting piece 113, so that the air flow communication flow is realized.

It can be seen that when the crystal growth apparatus adopts the continuous czochralski method (CCZ method) for crystal growth, the secondary feeding can be realized through the through-hole 113a, and the baffle 11 does not affect the crystal growth process.

As shown in fig. 4, in the second position, the second baffle 112 and the connecting member 113 are both spaced above the highest liquid level, so that the second baffle 112 and the connecting member 113 are both spaced from the material, and the second baffle 112 and the connecting member 113 are not in contact with the material, thereby facilitating smooth charging and ensuring the material melting rate.

Alternatively, the first baffle 111, the second baffle 112, and the connecting member 113 are all quartz members.

For example, the baffle 11 comprises a first baffle 111, a second baffle 112 and a connecting piece 113, before charging, the baffle 11 can be driven to a second position by the driving device 12, so that the first baffle 111, the second baffle 112 and the connecting piece 113 can not shield the crucible 2 in the charging process, charging is facilitated, meanwhile, materials can not collide with the first baffle 111, the second baffle 112 and the connecting piece 113, and the like, and the baffle 11 can not be scratched, damaged and the like by sharp parts of the materials; after waiting to expect to accomplish, when changing the material, baffle 11 can still keep in the second position, whole baffle 11 not with the material contact, then baffle 11 can not block heat transfer, be convenient for guarantee change material speed, and avoid changing the material incomplete material and be stained with on baffle 11, can reduce the time that baffle 11 is in the high temperature zone in addition, be favorable to prolonging baffle 11's life.

Of course, in other embodiments, the baffle 11 may also be configured to include the first baffle 111, but not the second baffle 112 and the connecting member 113; alternatively, the baffle 11 may be configured to include the first baffle 111 and the connection member 113, without including the second baffle 112.

In some embodiments, as shown in fig. 1 and 2, the second baffle plate 112 is disposed coaxially with the first baffle plate 111, i.e., the central axis of the second baffle plate 112 coincides with the central axis of the first baffle plate 111; the radial width of the connecting member 113 is x, the radial distance between the first baffle 111 and the second baffle 112 is x, x is greater than or equal to 100mm and less than or equal to 200mm, so as to ensure that the first chamber 2a and the second chamber 2b have proper radial spaces respectively, so as to meet the use requirement. For example, x may be 100mm, or 120mm, or 145mm, or 160mm, or 183mm, or 200mm, etc.

For example, in the example of fig. 1 and 2, the first baffle 111 and the second baffle 112 are each formed in a circular ring shape, and the radial width of the connecting member 113 is kept constant in the circumferential direction of the connecting member 113.

In some embodiments, as shown in fig. 1 and 2, the through hole 113a is provided in plurality, and the through holes 113a are spaced along the circumference of the second baffle 112, so as to ensure an airflow area, and provide good connectivity between the space on the upper side of the connecting piece 113 and the space on the lower side of the connecting piece 113. The connecting member 113 is formed as a flat plate structure, so that the connecting member 113 has a simple structure and is convenient to process, and the first baffle 111 and the second baffle 112 are reliably connected.

Of course, the present application is not so limited; in other embodiments, a plurality of through holes 113a are arranged at intervals along the circumferential direction of the second baffle plate 112, in this case, the connecting member 113 includes a plurality of sub-connecting members, the plurality of sub-connecting members are arranged at intervals along the circumferential direction of the second baffle plate 112, each sub-connecting member connects the first baffle plate 111 and the second baffle plate 112, and the through holes 113a are defined between two adjacent sub-connecting members, which also ensures that the first baffle plate 111 and the second baffle plate 112 are reliably connected.

It is understood that the number of the through holes 113a and the shape, size, etc. of the through holes 113a may be specifically set according to actual requirements.

In some optional embodiments, as shown in fig. 1 and fig. 2, a plurality of lifting connection portions 1120 are provided at the top end of the second baffle plate 112, the plurality of lifting connection portions 1120 are arranged at intervals along the circumferential direction of the second baffle plate 112, for example, the plurality of lifting connection portions 1120 are arranged at equal intervals along the circumferential direction of the second baffle plate 112, each lifting connection portion 1120 is connected to the driving device 12, and then the driving device 12 applies an acting force to the second baffle plate 112 through the plurality of lifting connection portions 1120, so as to facilitate the up-and-down stable movement of the baffle plate 11.

It is understood that the number and the specific structure of the hoisting connection portions 1120 can be specifically set according to actual requirements. For example, in the example of fig. 1 and 2, four hoisting connection portions 1120 are provided on the outer circumferential wall of the second baffle 112, each hoisting connection portion 1120 is formed with a threaded hole, and the driving device 12 is screwed with the hoisting connection portion 1120; of course, the number of the hoisting connection portions 1120 may be three, five, eight, etc., and the hoisting connection portions 1120 may also be engaged with the driving device 12, etc.

According to the utility model discloses crystal growth equipment of second aspect embodiment, including furnace body, crucible 2 and baffle subassembly 1, the furnace chamber is injectd to the furnace body, and in crucible 2 located the furnace chamber, baffle subassembly 1 was according to the utility model discloses the baffle subassembly 1 that is used for crucible 2 of above-mentioned first aspect embodiment.

At the first position, two axial ends of the first baffle 111 are respectively positioned above and below the current liquid level, and the outer peripheral wall of the first baffle 111 is stopped against the inner peripheral wall of the crucible 2; in the second position, the first baffle 111 is spaced above the highest liquid level.

According to the utility model discloses crystal growth equipment through adopting foretell baffle subassembly 1, can prolong crucible 2's life, and is convenient for promote the material speed of changing, guarantees the crystal quality.

For example, the crystal growing apparatus may be a single crystal furnace. Of course, those skilled in the art will appreciate that the baffle assembly 1 may also be used with other types of crystal growth apparatus, and is not limited thereto.

In some embodiments, the crystal growth apparatus further comprises a guide cylinder disposed in the furnace chamber and adapted to be spaced between the crystal and the inner circumferential wall of the crucible 2 to radially space the crystal from the inner circumferential wall of the crucible 2 to reduce the amount of heat transferred to the crystal, and the drive device 12 is mounted on the guide cylinder, so that the guide cylinder can provide a mounting force point for the drive device 12 to facilitate mounting of the drive device 12.

The specific position of the driving device 12 matched with the guide shell can be specifically set according to actual requirements; for example, the drive device 12 is attached to the top end of the guide shell. Of course, the driving device 12 may also be disposed in other parts of the crystal growth apparatus, and only the fixed installation of the driving device 12 is required.

For example, when the baffle 11 includes the first baffle 111, the driving device 12 is built on the guide shell; when the baffle 11 includes the first baffle 111, the second baffle 112, and the connecting member 113, the driving device 12 is mounted on the guide shell.

In the present application, "and/or" is meant to include three juxtaposed aspects, exemplified by "a and/or B" including either the a aspect, or the B aspect, or both a and B aspects.

The setting of the first position may include the following aspects:

1. in the first position, the relative heights of the first baffle 111 and the crucible 2 are unchanged, and the bottom end of the first baffle 111 is positioned above the R angle of the crucible 2, so that the material consumption of the first baffle 111 is reduced and the cost is reduced on the premise of ensuring the stable structure of the crucible 2; the relative height of the first baffle 111 and the crucible 2 is the difference between the absolute heights of the first baffle 111 and the crucible 2, that is, the first baffle 111 in the first position is kept stationary relative to the crucible 2 in the vertical direction.

2. In the first position, the relative height of the first baffle 111 and the crucible 2 is unchanged, and the top end of the first baffle 111 is flush with the top end of the crucible 2, then the first baffle 111 can support the upper part of the crucible 2, so as to avoid the upper edge of the crucible 2 from curling inwards due to softening, and the like, and ensure the structural stability of the crucible 2.

Of course, in the first position, the top end of the first shutter 111 may also be spaced above the top end of the crucible 2.

3. In the first position, the relative height of first baffle 111 and crucible 2 is unchangeable, and the bottom of first baffle 111 is located the R angle upside of crucible 2, and the top of first baffle 111 flushes with the top of crucible 2, is convenient for under the prerequisite of guaranteeing crucible 2 stable in structure, reduce cost.

Wherein, the R angle of the crucible 2 can be understood as the connection position of the peripheral wall of the crucible 2 and the bottom wall of the crucible 2, the thickness of the R angle is usually relatively thick, and the first position of the first baffle 111 is arranged at the upper side of the R angle, so that the stability requirement of the crucible 2 can be met; the up-down distance between the first baffle 111 at the first position and the angle R can be specifically set according to actual requirements.

It should be noted that when the crystal growth equipment adopts a continuous czochralski method (CCZ method) to produce crystals, the feeding is carried out simultaneously in the crystal growth process to ensure that the height of the liquid level in the crucible 2 is kept basically unchanged, and at the moment, the height position of the crucible 2 does not need to be adjusted up and down, so that the first baffle 111 at the first position does not need to move up and down; therefore, the schemes 1 to 3 are all suitable for the crystal growth by the continuous Czochralski method.

When the crystal growth equipment adopts a czochralski method (CZ method) to produce crystals, because no secondary feeding is carried out in the crystal growth process, the liquid level in the crucible 2 is gradually reduced, and in order to ensure that the absolute height of the liquid level in the crucible 2 is basically unchanged, the height position of the crucible 2 needs to be adjusted, so that the crucible 2 moves upwards, and the first baffle 111 also needs to move upwards along with the movement of the crucible 2; therefore, the schemes 1 to 3 are also suitable for crystal growth by the Czochralski method.

Other configurations and operations of crystal growth apparatuses according to embodiments of the present invention are known to those of ordinary skill in the art and will not be described in detail herein.

In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, merely for convenience of description and simplification of the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the invention. Furthermore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.

In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.

In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.

Claims (10)

1. A baffle plate assembly (1) for a crucible (2), characterized in that it comprises:

a baffle (11), the baffle (11) comprising a first baffle (111), the first baffle (111) formed as an annular structure;

drive arrangement (12), drive arrangement (12) with first baffle (111) link to each other in order to drive first baffle (111) are followed the axial of first baffle (111) reciprocates, first baffle (111) have primary importance and second place, the second place is located the top of primary importance first place, primary importance, the axial both ends of first baffle (111) are located respectively the top of present liquid level in crucible (2), below, just the periphery wall of first baffle (111) is suitable for and ends in the internal perisporium of crucible (2), secondary place, first baffle (111) interval is located the top of the highest liquid level in crucible (2).

2. Baffle plate assembly (1) for a crucible (2) according to claim 1, characterized in that the driving means (12) comprise a driving mechanism,

the driving device (12) further comprises a telescopic mechanism, and the driving mechanism is connected with the telescopic mechanism so as to drive the first baffle (111) to move up and down through telescopic deformation of the telescopic mechanism; alternatively, the first and second electrodes may be,

the driving device (12) further comprises a transmission mechanism, the transmission mechanism comprises a rotating part and a moving part, the moving part is connected with the first baffle (111), and the driving mechanism is connected with the rotating part so as to drive the moving part to move up and down through the rotation of the rotating part.

3. Baffle assembly (1) for a crucible (2) according to claim 1, characterized in that said baffle (11) and said crucible (2) are both quartz pieces and said crucible (2) comprises, in order from the inside towards the outside, a transparent layer defining the inner peripheral wall of said crucible (2) and a layer of gas bubbles.

4. Baffle assembly (1) for a crucible (2) according to any of claims 1 to 3, characterized in that the baffle (11) further comprises:

the second baffle plate (112) is formed into an annular structure and is arranged on the radial inner side of the first baffle plate (111) at intervals, and a communication opening penetrating along the radial direction of the second baffle plate (112) is formed in the second baffle plate (112);

the connecting piece (113) is connected with the first baffle plate (111) and the second baffle plate (112), a through hole (113 a) penetrating along the axial direction of the first baffle plate (111) is formed in the connecting piece (113), the bottom end of the second baffle plate (112) is suitable for being stopped against the inner bottom wall of the crucible (2) at the first position, the top end of the second baffle plate (112) is located above the current liquid level at intervals, the connecting piece (113) is located above the current liquid level at intervals, and the second baffle plate (112) and the connecting piece (113) are located above the highest liquid level at intervals at the second position.

5. Baffle plate assembly (1) for a crucible (2) according to claim 4, characterized in that the second baffle plate (112) is arranged coaxially to the first baffle plate (111), the connecting piece (113) having a radial width x,100mm ≦ x ≦ 200mm.

6. The baffle assembly (1) for a crucible (2) according to claim 4, wherein the through-holes (113 a) are plural, and the plural through-holes (113 a) are provided at intervals in a circumferential direction of the second baffle (112),

wherein the connecting member (113) is formed in a flat plate structure; alternatively, the first and second liquid crystal display panels may be,

the connecting piece (113) comprises a plurality of sub-connecting pieces arranged at intervals along the circumferential direction of the second baffle plate (112), each sub-connecting piece is connected with the first baffle plate (111) and the second baffle plate (112), and the through hole (113 a) is defined between every two adjacent sub-connecting pieces.

7. Baffle assembly (1) for a crucible (2) according to claim 4, wherein the top end of the second baffle (112) is provided with a plurality of lifting connections (1120), the plurality of lifting connections (1120) being arranged at intervals along the circumference of the second baffle (112), each lifting connection (1120) being connected to the driving means (12).

8. A crystal growth apparatus, comprising:

a furnace body defining a furnace chamber;

the crucible (2), the said crucible (2) locates in the said furnace chamber;

the baffle plate assembly (1), the baffle plate assembly (1) is used for the crucible (2) according to any one of claims 1 to 7, in the first position, two axial ends of the first baffle plate (111) are respectively positioned above and below the current liquid level, the outer peripheral wall of the first baffle plate (111) abuts against the inner peripheral wall of the crucible (2), and in the second position, the first baffle plate (111) is positioned above the highest liquid level at intervals.

9. The crystal growth apparatus of claim 8, further comprising:

the guide flow cylinder is arranged in the furnace cavity and is suitable for being arranged between the crystal and the inner peripheral wall of the crucible (2) at intervals, and the driving device (12) is erected on the guide flow cylinder.

10. Crystal growth apparatus as in claim 8 or 9, characterized in that in said first position the relative height of said first shutter (111) and said crucible (2) is constant,

in the first position, the bottom end of the first baffle (111) is positioned on the upper side of the R angle of the crucible (2); and/or the presence of a gas in the gas,

in the first position, the top end of the first shutter (111) is flush with the top end of the crucible (2).

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