CN217715044U

CN217715044U - Integrated packaged semiconductor bridge igniter

Info

Publication number: CN217715044U
Application number: CN202221112262.3U
Authority: CN
Inventors: 罗容; 陈兴
Original assignee: Nanjing Jingtouch Electronic Technology Development Co ltd
Current assignee: Nanjing Jingtouch Electronic Technology Development Co ltd
Priority date: 2022-05-10
Filing date: 2022-05-10
Publication date: 2022-11-01
Anticipated expiration: 2032-05-10

Abstract

The utility model discloses an integration encapsulation semiconductor bridge point firearm belongs to priming sytem technical field and electronic packaging technical field. The method comprises the following steps: the semiconductor resistor bridge chip comprises a packaging base body, an adhesive layer, a semiconductor resistor bridge chip, a connecting electrode layer and an energy-containing layer. The utility model discloses need not the lead wire encapsulation during the use, semiconductor bridge resistance can cover the compound film that contains energy, and in the working process, the compound film that contains energy takes place the thermite reaction, emits the heat, detonates gunpowder, reduces the required energy of ignition and ignition time widely, can be used for solving security, the reliability difficult problem that current metal lead wire bonding encapsulation point firearm exists.

Description

Integrated packaged semiconductor bridge igniter

Technical Field

The utility model belongs to the technical field of initiating explosive device and electronic packaging technique, especially, relate to an integration encapsulation semiconductor bridge point firearm.

Background

The safety and reliability of the igniter are the key to the safety and reliability of the whole initiating explosive device system. Although the traditional bridge wire type or film bridge igniter can also meet the safety requirement of non-ignition under the conditions of 1A/1W and 5min, the reliability cannot adapt to the use requirement of the current initiating explosive device because a separating element needs to be integrated and packaged.

The main disadvantages of the prior art igniters are: 1. the packaging is difficult; 2. the reliability is poor. The prior art cannot solve the defects because: the traditional packaging of the thin film bridge igniter is that a thin film bridge is bonded in a groove between pin wires of a ceramic plug or a TO electrode plug by using epoxy resin, and then metal connecting pin wires are welded on a welding area on the thin film bridge by using ultrasonic waves or gold wire ball welding, so that the problems of ceramic fracture, welding wire disconnection or joint looseness exist in practical application, and the thin film bridge igniter is not suitable for pressing and assembling initiating explosive; moreover, the igniter in the packaging form has poor environmental vibration and impact interference resistance, and the igniter is inevitably influenced by vibration in use and transportation under ordinary conditions, so that the welding point is broken and detached possibly, and the ignition reliability of the initiating explosive device is influenced. Therefore, the traditional lead welding packaging form does not meet the requirements of high safety and reliability of the initiating explosive device system.

SUMMERY OF THE UTILITY MODEL

The utility model aims at overcoming the defect that above-mentioned prior art exists, provide a semiconductor bridge point firearm of integration encapsulation, adopt more reliable reflow soldering technology and pre-buried formula structure to replace traditional metal lead bonding, mode such as seal.

The utility model provides a technical scheme that its technical problem adopted is: a integrally packaged semiconductor bridge igniter, comprising: the packaging substrate is symmetrically arranged on the first electrode layers at two ends of the upper surface of the packaging substrate; the upper surface of the packaging substrate is sunken from top to bottom to form a core cavity; further comprising:

the semiconductor resistance bridge chip is bonded in the chip cavity; the corresponding position of the upper surface of the semiconductor resistance bridge chip is downwards sunken to form a core hole;

the energy-containing layer is laid in the core hole;

and the connecting electrode layer is bonded to the first electrode layer at one end, and connected to the electrode of the semiconductor resistance bridge chip at the other end.

In a further embodiment, further comprising: and the second electrode layers are symmetrically arranged at two ends of the lower surface of the packaging substrate.

In a further embodiment, two side faces of the packaging substrate are inwards concave curved surfaces, and a half-hole structure communicated with the first electrode layer and the second electrode layer is formed;

and a third electrode layer is arranged on the curved surface.

In a further embodiment, an adhesive layer is arranged between the bottom surface of the semiconductor resistance bridge chip and the core cavity, and the adhesive layer is an epoxy resin adhesive or a DAF film, and the thickness of the adhesive layer is 10-50 μm.

In a further embodiment, the packaging substrate is a double-sided copper-clad FR4 substrate or a polyimide substrate, and the depth of the core cavity is 10 to 50 μm greater than the thickness of the semiconductor resistance bridge chip.

In further embodiments, the energy-containing layer is Al/CuO, al/Fe₂O₃Or at least one layer of Al/NiO composite energetic film.

In a further embodiment, the connection electrode layer is made of a single-sided or double-sided copper-clad flexible polyimide material, and the thickness of the connection electrode layer is 25-100 μm.

In a further embodiment, the first electrode layer, the second electrode layer and the third electrode layer have the same structure, have a thickness of 8 to 38 μm, and at least include: 4 to 15 mu m copper layer, 1 to 8 mu m nickel layer, 3 to 15 mu m tin layer and 0.05 to 0.5 mu m gold layer.

The utility model has the advantages that: the utility model discloses a semiconductor bridge resistance chip of integration encapsulation semiconductor bridge point firearm is synthetic integrative with the whole component of base member, need not the lead wire encapsulation during use, and semiconductor bridge resistance can cover the compound film that contains can, and in the course of the work, the compound film that contains can take place aluminothermic reaction, emits the heat, detonates gunpowder, reduces the required energy of ignition and ignition time widely, can be used for solving security, the reliability difficult problem that current metal lead wire bonding encapsulation point firearm exists. Compare with the semiconductor bridge point firearm of current traditional metal lead bonding encapsulation, the utility model discloses an integration film bridge point firearm has reduced this process of gold wire lead wire, has avoided the circumstances such as gold wire fracture or solder joint insecure that probably appear in transportation and use, has improved reliability, the security of film bridge point firearm greatly, has strengthened the processing technology uniformity.

The utility model discloses an integration encapsulation semiconductor bridge point firearm adopts semiconductor processing technology and laser drilling technology, is favorable to improving the uniformity of processing technology and the reliability level that the firearm was used to can realize mass production, effectively reduce manufacturing cost.

Drawings

Fig. 1 is a top view of an integrally packaged semiconductor bridge igniter.

Fig. 2 is a front view of an integrally packaged semiconductor bridge igniter.

Each of fig. 1 to 2 is labeled as: the semiconductor resistor bridge chip comprises a packaging substrate 1, an adhesive layer 2, a semiconductor resistor bridge chip 3, a connecting electrode layer 4, a surface electrode layer 5, an energy-containing layer 6, a first electrode layer 501, a second electrode layer 502 and a third electrode layer 503.

Detailed Description

The invention is further described with reference to the drawings and examples.

The integrally packaged semiconductor bridge igniter adopts a more reliable reflow soldering process and a pre-embedded structure to replace the traditional metal lead bonding, packaging and other modes. In particular, as shown in fig. 1 and 2, an integrally packaged semiconductor bridge igniter, comprising: the packaging substrate 1, the adhesive layer 2, the semiconductor resistance bridge chip 3, the connecting electrode layer 4 and the energy-containing layer 6. The upper surface of the packaging base body 1 is sunken from top to bottom to form a core cavity, and the core cavity is formed by laser processing. And an adhesive layer 2 is paved on the upper surface in the core cavity, and the adhesive layer 2 is used for fixing a semiconductor resistance bridge chip 3. In a further embodiment, the package substrate 1 is a double-sided copper-clad FR4 substrate or a polyimide substrate, and the depth of the core cavity is 10 to 50 μm greater than the thickness of the semiconductor resistance bridge chip 3. Meanwhile, the bonding layer 2 is an epoxy resin bonding adhesive or a DAF film, and the thickness of the bonding layer is 10 to 50 μm. I.e. the height of the chip 3 of the semiconductor resistor bridge is basically consistent after the core cavity is filled with the adhesive layer 2. It should be noted that the size of the core cavity is slightly larger than that of the semiconductor resistor bridge chip 3 to facilitate mounting, so as to prevent the semiconductor resistor bridge chip 3 from being damaged and failed due to deviation or rotation during mounting.

In a further embodiment, the corresponding position of the upper surface of the semiconductor resistance bridge chip 3 is recessed downwards to form a core hole; the energy-containing layer 6 is laid in the core hole, wherein the energy-containing layer 6 is at least one layer of composite energy-containing film of Al/CuO, al/Fe2O3 or Al/NiO.

In another embodiment, the first electrode layers 501 are symmetrically disposed at two ends of the upper surface of the package substrate 1, that is, the first electrode layers 501 are correspondingly laid on the upper surface of the package substrate 1, one end of the connection electrode layer 4 is connected to the first electrode layer 501 in a welding manner, and the other end is welded to an electrode of the semiconductor resistor bridge chip 3. In a further embodiment, the connection electrode layer 4 is a single-sided or double-sided copper-clad flexible polyimide material with a thickness of 25 to 100 μm.

Further comprising: and the second electrode layers 502 are symmetrically arranged at two ends of the lower surface of the packaging substrate 1.

In a further embodiment, two side surfaces of the package substrate 1 are curved surfaces which are recessed inwards, so as to form a half-hole structure which is communicated with the first electrode layer 501 and the second electrode layer 502; a third electrode layer 503 is disposed on the curved surface. In this embodiment, the first electrode layer 501, the second electrode layer 502 and the third electrode layer 503 form a complete surface electrode layer 5. The thickness of the surface electrode layer 5 is 8 to 38 mu m, and the surface electrode layer at least comprises: 4 to 15 mu m of copper layer, 1 to 8 mu m of nickel layer, 3 to 15 mu m of tin layer and 0.05 to 0.5 mu m of gold layer. In other words, the first electrode layer 501, the second electrode layer 502, and the third electrode layer 503 have the same structure.

The process for manufacturing the integrally packaged semiconductor bridge igniter of the embodiment comprises the following steps:

a. the packaging base body 1 adopts a double-sided copper-clad FR4 substrate or a polyimide substrate, a core cavity is processed at a position corresponding to the semiconductor resistance bridge chip 3 by adopting a laser processing technology, the core cavity is 10 to 50 micrometers deeper than the semiconductor resistance bridge chip 3, and the height of the core cavity, which is corresponding to the semiconductor resistance bridge chip 3, is basically consistent after the bonding layer 2 is filled in the core cavity;

optionally, the package substrate 1 may be two layers of FR4 substrates or polyimide substrates, the upper layer package substrate is 10 to 50 μm thicker than the semiconductor resistance bridge chip 3, a core cavity hole is drilled at a position corresponding to the semiconductor resistance bridge chip 3 by using a laser processing technology, and the upper layer package substrate and the lower layer package substrate are bonded to form a package substrate with a core cavity;

furthermore, the size of the core cavity is slightly larger than that of the semiconductor resistance bridge chip 3 so as to facilitate mounting, and damage and failure of the chip caused by deviation or rotation during mounting are prevented;

b. the method comprises the following steps that through hole processing is carried out on a packaging base body 1 which is processed by a core cavity through a laser drilling process, a plurality of products can be connected in series to form array arrangement in actual production, a half-hole structure is formed after division and shared by two products, the half-hole structure communicated with electrodes 5 on the upper surface and the lower surface of the packaging base body 1 is formed, the half-hole structure is subjected to metallization processing so as to form a complete electrode layer, laser drilling is adopted for further through hole processing, and the laser drilling can prevent deformation or curling of a thin film base body while ensuring high processing precision;

c. preparing a surface electrode 5 pattern on the packaging substrate 1 with the core cavity after the through hole processing by utilizing a semiconductor photoetching process, and further controlling the circuit defects of the surface pattern to be less than +/-20 mu m;

d. after the upper surface and the lower surface of the packaging substrate 1 with the core cavity and the semi-hole structure electrodes are subjected to through hole processing, copper electroplating, nickel electroplating and tin or gold electroplating, a complete surface electrode layer 5 is formed;

e. pre-cleaning and drying the obtained electroplating packaging substrate for later use, and adhering and fixing the semiconductor resistor bridge chip 3 with the DAF film (adhesive layer 2) on the back surface in a core cavity of the packaging substrate by an automatic sheet sticking machine;

optionally, the semiconductor resistor bridge chip 3 may be fixed to the package substrate by an adhesive (adhesive layer 2) such as epoxy at a point in the core cavity of the package substrate 1;

f. the connecting electrode layer 4 is made of a flexible polyimide film coated with copper on a single side or double sides, through hole processing is carried out by adopting a laser drilling process, holes are drilled at positions corresponding to the core ignition resistors of the semiconductor resistor bridge chip 3 after the bonding, and the walls of the holes are trimmed and subjected to non-metallization processing after the through holes are drilled to form core holes;

further, the core hole is slightly larger than the core firing resistor of the semiconductor resistor bridge chip 3, so as to ensure that the core firing resistor is just positioned in the middle of the core hole and is not covered by the polyimide film substrate after the mounting is finished;

g, preparing a connecting electrode pattern from the flexible polyimide film subjected to the non-metallized hole treatment by adopting a semiconductor photoetching process, and further controlling the line defects of the connecting electrode pattern to be less than +/-20 microns;

h. after the flexible polyimide substrate subjected to connecting electrode pattern etching is electroplated with tin or nickel and gold, a complete connecting electrode layer 4 is formed;

i. printing a layer of soldering paste on the corresponding electrode positions of the packaging base body 1 and the semiconductor resistance bridge chip 3 through a printing screen or a soldering paste dispenser, covering the connecting electrode layer 4 on the packaging base body 1 and the semiconductor resistance bridge chip 3 by using a positioning device, forming welding interconnection through reflow soldering, respectively interconnecting the connecting electrode layer 4 with the surface electrode layer 5 of the packaging base body 1 and the electrode of the semiconductor resistance bridge chip 3 after the welding is finished, and positioning a core ignition resistor of the semiconductor resistance bridge chip 3 in the middle of a core hole position of the connecting electrode layer 4;

j. and cutting the semi-finished substrate into a plurality of granular products according to the designed size requirement, and then cleaning and drying to obtain the finished igniter.

The embodiment does not need a lead bonding interconnection structure or an encapsulation structure, has simple, reliable and high-efficiency packaging process, and is suitable for thinning and standardized surface mounting of a semiconductor resistor bridge in an automobile air bag, an automobile safety hammer, a digital electronic detonator and the like for packaging and low-cost and high-reliability requirements.

Claims

1. An integrally packaged semiconductor bridge igniter, comprising: the packaging substrate is symmetrically arranged on the first electrode layers at two ends of the upper surface of the packaging substrate; the packaging structure is characterized in that the upper surface of the packaging base body is sunken from top to bottom to form a core cavity; further comprising:

the energy-containing layer is laid in the core hole;

and one end of the connecting electrode layer is bonded to the first electrode layer, and the other end of the connecting electrode layer is connected to the electrode of the semiconductor resistance bridge chip.

2. The integrally packaged semiconductor bridge igniter of claim 1, further comprising: and the second electrode layers are symmetrically arranged at two ends of the lower surface of the packaging substrate.

3. The integrally packaged semiconductor bridge igniter as claimed in claim 2, wherein two side faces of the package base body are curved surfaces which are recessed inwards to form a half-hole structure communicated with the first electrode layer and the second electrode layer;

and a third electrode layer is arranged on the curved surface.

4. The igniter as claimed in claim 1, wherein an adhesive layer is disposed between the bottom surface of the chip and the cavity, and the adhesive layer is an epoxy adhesive or a DAF film with a thickness of 10 to 50 μm.

5. The igniter as claimed in claim 1, wherein the package base is a double-sided copper-clad FR4 substrate or polyimide substrate, and the depth of the core cavity is 10 to 50 μm greater than the thickness of the semiconductor resistor bridge chip.

6. The integrally packaged semiconductor bridge igniter of claim 1, wherein the energy containing layer is Al/CuO, al/Fe₂O₃Or at least one layer of Al/NiO composite energetic film.

7. The igniter as claimed in claim 1, wherein the connection electrode layer is made of copper-clad flexible polyimide material with a thickness of 25 to 100 μm.

8. The igniter as claimed in claim 3, wherein the first electrode layer, the second electrode layer and the third electrode layer have the same structure, the thickness is 8 to 38 μm, and the igniter at least comprises: 4 to 15 mu m copper layer, 1 to 8 mu m nickel layer, 3 to 15 mu m tin layer and 0.05 to 0.5 mu m gold layer.