CN217677905U - Ingot casting crucible for purifying electron beam polycrystalline silicon - Google Patents

Abstract

The utility model discloses an ingot crucible is used in purification of electron beam polycrystalline silicon relates to the crucible field, the utility model discloses an outer crucible, the inside of outer crucible is provided with the inlayer crucible, is provided with fire-resistant filling layer between outer crucible and the inlayer crucible, and the screw rod is all installed in the top four corners of outer crucible, the utility model discloses an establish the ingot crucible into skin and inlayer, and outer crucible and inlayer crucible adopt screw rod and nut fixed, and be provided with fire-resistant filling layer between outer crucible and the inlayer crucible, fire-resistant filling layer plays the effect of location inlayer crucible and preventing inlayer crucible dislocation, prevents that the inlayer crucible from receiving outer crucible inner wall extrusion and fracture by thermal expansion, and after the inlayer crucible damages, the staff rotates the rotor plate for the nut rotates, and the nut rotates and takes place to break away from with the screw rod, then takes out the inlayer crucible from outer crucible, has realized the work that the inlayer crucible was changed, has reduced use cost.

Description

Ingot casting crucible for purifying electron beam polycrystalline silicon

Technical Field

The utility model relates to a crucible field specifically is an ingot casting crucible for purification of electron beam polycrystalline silicon.

Background

The crucible is a container frequently used for production and scientific research in the fields of chemical industry and mining and metallurgy, is used for roasting and smelting minerals, metals or nonmetals, and is widely applied to the industries of metallurgical industry, monocrystalline silicon, material processing and the like.

The sediment can be hung to the inner wall after the crucible uses, consequently need clear up inside the graphite crucible, and long-term clearance can lead to the graphite crucible inner wall to cause wearing and tearing to influence the preparation of silicon carbide crystal, for this reason, need directly change graphite crucible wholly, then consume use cost owing to whole change again, consume the energy simultaneously, and the used crucible crystal nucleus of present production forms slowly, and the size is inhomogeneous, leads to polycrystalline silicon ingot's production speed slow, and the appearance is poor.

SUMMERY OF THE UTILITY MODEL

Based on this, the utility model aims at providing an electron beam is ingot casting crucible for polycrystalline silicon purification to solve the crucible and take place wearing and tearing easily, change with high costs and crystal nucleus formation slow, technical problem of size inhomogeneous.

In order to achieve the above object, the utility model provides a following technical scheme: the utility model provides an ingot casting crucible for purification of electron beam polycrystalline silicon, includes outer crucible, the inside of outer crucible is provided with the inlayer crucible, the inside of inlayer crucible is provided with the baffle, be provided with fire-resistant filling layer between outer crucible and the inlayer crucible, the screw rod is all installed in the top four corners of outer crucible, the through-hole has all been run through in the top four corners of inlayer crucible, just the one end of screw rod extends to the inside of through-hole and has cup jointed the nut, the surface of outer crucible is seted up flutedly, the bottom of outer crucible is provided with the support bellying, inlayer crucible and baffle inner wall are provided with arc bellying and non-stick layer respectively.

Further, fire-resistant filling layer is including fire-resistant cotton layer, the bottom on fire-resistant cotton layer is provided with the rock wool layer, the bottom on rock wool layer is provided with the glass fiber layer.

By adopting the technical scheme, the inner layer crucible is prevented from being heated and expanded, and cannot be buffered and cracked due to the extrusion of the inner wall of the outer layer crucible.

Furthermore, the non-stick layer is made of graphite materials, and the thickness of the non-stick layer is 5-20 mm.

By adopting the technical scheme, the graphite material does not react with roasted and smelted metal minerals, does not stick to the crucible, has good temperature resistance, reduces the cleaning times and cleaning time of the crucible, and avoids the condition that the inner wall of the crucible is abraded due to long-term cleaning.

Furthermore, the nut is provided with four groups, and the two sides of the four groups of nuts are provided with rotating pieces.

Through adopting above-mentioned technical scheme, the staff can be convenient for rotate the nut through the revolving fragment.

Furthermore, the two groups of the partition plates are arranged and distributed in a cross manner, and the partition plates and the inner crucible are detachably arranged.

By adopting the technical scheme, the forming speed of the polycrystalline silicon ingot is improved.

Furthermore, the supporting protrusions are provided with multiple groups, and the multiple groups of supporting protrusions are of structures with gradually reduced cross sections from bottom to top.

By adopting the technical scheme, the bottom of the supporting protrusion absorbs enough heat through point contact and heat radiation, a small hot spot is formed when the heat is transferred to the bottom of the outer-layer crucible, the temperature of the hot spot is higher than the peripheral temperature, the periphery of the hot spot forms a relatively cold spot, and the relatively cold spots are uniformly distributed, so that the core can be uniformly formed in the inner-layer crucible.

To sum up, the utility model discloses mainly have following beneficial effect:

1. the utility model discloses a be provided with the non-stick layer, the non-stick layer is made for graphite material, graphite material and calcination, smelt metal mineral and do not take place the reaction, non-stick crucible, the temperature toleration is good, has reduced clearance number of times and clearance time to the crucible, avoids long-term clearance to lead to the fact the condition that the crucible inner wall causes wearing and tearing, can effectively prolong crucible life, reach the effect of anti-sticking material, greatly improve production, have apparent economic benefits and social, can extensively be used for metal melting, mineral slag material calcination melting of metallurgical industry tests and production such as divide;

2. the utility model discloses a set up the ingot casting crucible into skin and inlayer, and skin crucible and inlayer crucible adopt screw rod and nut to fix, and be provided with fire-resistant filling layer between skin crucible and the inlayer crucible, fire-resistant filling layer plays the effect of location inlayer crucible and preventing the dislocation of inlayer crucible, prevent that the inlayer crucible from being heated the thermal expansion and can't buffering receive the skin crucible inner wall extrusion and fracture, after the inlayer crucible damages, the staff rotates the rotor, make the nut rotate, the nut rotates and breaks away from with the screw rod, then take out the inlayer crucible from the skin crucible, the work of changing of inlayer crucible has been realized, make the skin crucible play the effect of used repeatedly simultaneously, the energy has been saved, use cost is reduced;

3. the utility model discloses an outer crucible surface is seted up flutedly, the recess has increased the surface area of outer crucible, the heat that makes the crystal stove evenly transmits to the crucible inlayer, the inside of inlayer crucible is provided with the baffle, separate into a plurality of crystallization intervals with the crucible through setting up the baffle, improve polycrystalline silicon ingot's production speed, can guide polycrystalline silicon to grow the even little crystalline grain of size on the wall of inlayer crucible and baffle through being provided with the arc bellying, guarantee that polycrystalline silicon evenly grows fast, the bottom of outer crucible is provided with the support bellying, the support bellying has strengthened the heat conductivity of outer crucible this point department, and then make the temperature of this position department be higher than peripheral temperature, its periphery forms evenly distributed's relative cold spot, make the inside of inlayer crucible evenly nucleate, the speed that the crystal nucleus formed has been improved.

Drawings

FIG. 1 is a schematic view of the present invention;

FIG. 2 is a schematic sectional view of the inner crucible of the present invention;

FIG. 3 is a schematic structural view of the refractory filling layer of the present invention;

fig. 4 is an enlarged schematic structural diagram of a in fig. 1 according to the present invention.

In the figure: 1. an outer crucible; 2. an inner crucible; 3. a partition plate; 4. a groove; 5. a non-stick layer; 6. a support boss; 7. a through hole; 8. a screw; 9. a nut; 10. a rotating sheet; 11. a refractory filler layer; 1101. a refractory cotton layer; 1102. a rock wool layer; 1103. a glass fiber layer; 12. an arc-shaped convex part.

Detailed Description

The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present invention, and should not be construed as limiting the present invention.

The following describes an embodiment of the present invention according to its overall structure.

The utility model provides an ingot casting crucible for purification of electron beam polycrystalline silicon, as shown in fig. 1-4, including outer crucible 1, the inside of outer crucible 1 is provided with inlayer crucible 2, the inside of inlayer crucible 2 is provided with baffle 3, be provided with fire-resistant filling layer 11 between outer crucible 1 and the inlayer crucible 2, fire-resistant filling layer 11 is including fire-resistant cotton layer 1101, the bottom of fire-resistant cotton layer 1101 is provided with rock wool layer 1102, the bottom of rock wool layer 1102 is provided with glass fiber layer 1103, prevent that inlayer crucible 2 from receiving the extrusion of outer crucible 1 inner wall and splitting by the unable buffering of thermal expansion, screw rod 8 is all installed at the top four corners of outer crucible 1, the top four corners of inlayer crucible 2 has all been run through there is through-hole 7, and the one end of screw rod 8 extends to the inside of through-hole 7 and has cup jointed nut 9, the surface of outer crucible 1 is seted up fluted 4, the bottom of outer crucible 1 is provided with supporting protrusion 6, inlayer crucible 2 and the inner wall 3 inner wall are provided with arc bellying portion 12 and non-stick layer 5 respectively, non-stick layer 5 is made for the graphite material forms, the thickness of non-stick layer 5 is 5 ~ 20mm, graphite material and calcination, the calcination does not take place the reaction, the metal mineral, the clearance, the condition of crucible, the non-stick crucible of the non-stick crucible cleaning time that causes the crucible, the crucible cleaning time of smelting can cause the non-stick cleaning, the condition of crucible is reduced.

Referring to fig. 1, 2 and 4, the nuts 9 are provided with four groups, and the two sides of each of the four groups of nuts 9 are provided with rotating pieces 10, so that a worker can conveniently rotate the nuts 9 through the rotating pieces 10.

Referring to fig. 1, two groups of the partition plates 3 are arranged, the two groups of the partition plates 3 are distributed in a crisscross manner, the partition plates 3 are detachably arranged with the inner crucible 2, and the partition plates 3 improve the forming speed of the polycrystalline silicon ingot.

Referring to fig. 2, the supporting protrusions 6 are provided with a plurality of groups, and the plurality of groups of supporting protrusions 6 are of a structure with cross sections gradually reduced from bottom to top, so that the bottoms of the supporting protrusions 6 absorb enough heat through point contact and thermal radiation, and form small hot spots when being transmitted to the bottom of the outer-layer crucible, so that the temperature of the hot spots is higher than the temperature of the periphery of the hot spots, the periphery of the hot spots forms relatively cold spots, and the relatively cold spots are uniformly distributed to enable uniform nucleation in the inner-layer crucible.

The implementation principle of the embodiment is as follows: when the crucible is used, the surface area of the outer crucible 1 is increased by the groove 4, heat of a crystal furnace is uniformly transferred to the inner layer of the crucible, the partition plate 3 is arranged inside the inner crucible 2, the crucible is divided into a plurality of crystallization sections by the partition plate 3, the arc-shaped protruding portion 12 can guide small crystal grains with uniform sizes to grow on the wall surfaces of the inner crucible 2 and the partition plate 3, the polycrystalline silicon is guaranteed to uniformly and rapidly grow, the supporting protruding portion 6 is arranged at the bottom of the outer crucible 1, the thermal conductivity of the point of the outer crucible 1 is enhanced by the supporting protruding portion 6, the temperature of the position is higher than the peripheral temperature, the periphery of the position forms uniformly distributed relative cold points, the inside of the inner crucible 2 can be uniformly nucleated, the crystal nucleus forming speed is improved, after the inner crucible 2 is damaged, a worker rotates the rotary piece 10, the nut 9 rotates to separate from the screw rod 8, the inner crucible 2 is taken out of the outer crucible 1, and the work of replacing the inner crucible 2 is realized.

While embodiments of the invention have been illustrated and described, it is not intended to limit the invention to the exact construction and operation illustrated and described, and that various other features, structures, materials, or characteristics may be substituted for those illustrated and described without departing from the spirit and scope of the invention.

Claims (6)

1. The utility model provides an ingot casting crucible for purification of electron beam polycrystalline silicon, includes outer crucible (1), its characterized in that: the utility model discloses a crucible, including outer crucible (1), the inside of outer crucible (1) is provided with inlayer crucible (2), the inside of inlayer crucible (2) is provided with baffle (3), be provided with fire-resistant filling layer (11) between outer crucible (1) and inlayer crucible (2), screw rod (8) are all installed in the top four corners of outer crucible (1), the top four corners of inlayer crucible (2) all runs through-hole (7), just the one end of screw rod (8) extends to the inside of through-hole (7) and has cup jointed nut (9), the surface of outer crucible (1) is seted up fluted (4), the bottom of outer crucible (1) is provided with support bellying (6), inlayer crucible (2) and baffle (3) inner wall are provided with arc bellying (12) and non-stick layer (5) respectively.

2. The ingot crucible for purifying the electron beam polysilicon according to claim 1, wherein: the fireproof filling layer (11) comprises a fireproof cotton layer (1101), a rock wool layer (1102) is arranged at the bottom of the fireproof cotton layer (1101), and a glass fiber layer (1103) is arranged at the bottom of the rock wool layer (1102).

3. The ingot crucible for purifying the electron beam polysilicon according to claim 1, wherein: the non-stick layer (5) is made of graphite materials, and the thickness of the non-stick layer (5) is 5-20 mm.

4. The ingot crucible for purifying the electron beam polysilicon according to claim 1, wherein: the nut (9) is provided with four groups, and the two sides of the four groups of nuts (9) are provided with rotating pieces (10).

5. The ingot crucible for purifying the electron beam polysilicon according to claim 1, wherein: the partition plates (3) are arranged in two groups, the partition plates (3) are distributed in a cross shape, and the partition plates (3) and the inner crucible (2) are detached.

6. The ingot crucible for purifying the electron beam polysilicon according to claim 1, wherein: the supporting protrusions (6) are provided with multiple groups, and the multiple groups of supporting protrusions (6) are of structures with gradually reduced cross sections from bottom to top.

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