CN217641323U

CN217641323U - Backlight module

Info

Publication number: CN217641323U
Application number: CN202221259971.4U
Authority: CN
Inventors: 潘飞; 刘政明; 曹江
Original assignee: Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
Current assignee: Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
Priority date: 2022-05-23
Filing date: 2022-05-23
Publication date: 2022-10-21
Anticipated expiration: 2032-05-23

Abstract

The utility model relates to a backlight module, include: the chip bonding structure comprises a driving substrate, a plurality of chip bonding areas and a plurality of bonding pads, wherein one side of the driving substrate is provided with the chip bonding areas; the light-emitting chips are arranged in the chip bonding regions and are bonded with the corresponding bonding pads; the dam retaining wall is arranged on the driving substrate and encloses the chip bonding regions; the fluorescent adhesive layer is arranged in each chip bonding area and covers the light-emitting chip in each chip bonding area, and the fluorescent adhesive layer in the adjacent chip bonding area is separated by the dam retaining wall; and a quantum dot layer arranged on the fluorescent glue layer. The flow of fluorescence glue film when the injecting glue can receive the restriction of box dam barricade for each fluorescence glue film all can well be filled in the box dam barricade, and the thickness of fluorescence glue film can obtain accurate control, has guaranteed the height homogeneity of fluorescence glue film on thickness, and backlight unit possesses good light-emitting effect, has improved the picture quality.

Description

Backlight module

Technical Field

The utility model relates to a LED shows the field, especially relates to a backlight unit.

Background

At present, a Mini-LED (Light Emitting Diode) is a novel liquid crystal backlight technology, which has the characteristics of high brightness, high dynamic contrast, and high color gamut, and has a faster response speed while maintaining an excellent display effect.

At present, the Mini-LED backlight module generally adopts a framework that a Mini-LED light emitting chip excites quantum dots, and a fluorescent glue layer is generally disposed between the light emitting chip and the quantum dot layer, and the fluorescent glue layer is generally an integral structure formed by glue injection. The fluorescent glue layer with the integral structure is formed in a glue injection mode, the thickness of the fluorescent glue layer is not easy to control, and the fluorescent glue layer has the problem of uneven height. The thickness of the fluorescent glue layer can cause incomplete light absorption of the chip once being lower than the standard value, and the thickness of the fluorescent glue layer can cause excessive light absorption of the chip once being higher than the standard value, so that the deviation of backlight color coordinates is caused, the light emitting effect of the backlight module is influenced, and the picture quality is reduced.

Therefore, how to solve the unevenness of the thickness of the fluorescent glue layer is an urgent problem to be solved.

SUMMERY OF THE UTILITY MODEL

In view of the above-mentioned deficiencies of the related art, the present application provides a backlight module, which aims to solve the problem of non-uniformity of the thickness of the phosphor layer.

A backlight module includes:

the chip bonding structure comprises a driving substrate, a plurality of chip bonding areas and a plurality of bonding pads, wherein one side of the driving substrate is provided with the chip bonding areas;

the light-emitting chips are arranged in the chip bonding regions and bonded with the corresponding bonding pads;

the dam retaining wall is arranged on the driving substrate and used for enclosing the chip bonding regions;

the fluorescent adhesive layer is arranged in each chip bonding area and covers the light-emitting chip in each chip bonding area, and the fluorescent adhesive layer in the adjacent chip bonding area is separated by the dam retaining wall;

and a quantum dot layer arranged on the fluorescent glue layer.

Above-mentioned backlight unit passes through the box dam barricade that sets up on the drive base plate, will each the chip bonding district encloses respectively and closes, can distinguish the injecting glue shaping fluorescence glue film at the chip bonding district that corresponds through the effect of blockking of box dam barricade from this, form by a plurality of fluorescence glue films that the box dam barricade cuts off. The flow of each fluorescence glue film when the injecting glue can receive the restriction of box dam barricade for each fluorescence glue film all can well be filled in the box dam barricade, and the thickness of each fluorescence glue film all can obtain accurate control, has guaranteed the height homogeneity of fluorescence glue film on thickness, has solved the problem of the color coordinate skew of being shaded that leads to because of fluorescence glue film error in thickness, makes backlight unit possess good light-emitting effect, has improved the picture quality.

Optionally, the driving substrate includes a driving control circuit for respectively controlling the chip bonding regions. The chip bonding areas can be controlled respectively, and the partition control of the light-emitting chip bonded by the chip bonding areas is realized. The light emitting chips in each area are covered by the fluorescent glue layers respectively, namely the light emitting chips in one control unit are covered by one fluorescent glue layer.

Drawings

Fig. 1 is a schematic structural view of a backlight module according to an embodiment of the present invention;

fig. 2 is a schematic diagram of a chip bonding region bonding pad provided by an embodiment of the present invention;

fig. 3 is a schematic diagram of a light emitting chip disposed in each chip bonding region according to an embodiment of the present invention;

fig. 4 is a schematic diagram of two light emitting chips disposed in each chip bonding region according to an embodiment of the present invention;

fig. 5 is a schematic diagram illustrating a plurality of light emitting chips disposed in each chip bonding region according to an embodiment of the present invention;

fig. 6 is a schematic view of a retaining wall of a dam and fluorescent glue powder arranged on a driving substrate according to an embodiment of the present invention;

fig. 7 is a schematic diagram of a quantum dot layer according to an embodiment of the present invention;

fig. 8 is another schematic diagram of a quantum dot layer according to an embodiment of the present invention;

fig. 9 is a schematic view of a first reflective layer and a second reflective layer according to an embodiment of the present invention;

fig. 10 is a schematic view of an optical module according to an embodiment of the present invention;

fig. 11 is another schematic view of an optical module according to an embodiment of the present invention;

fig. 12 is another schematic structural diagram of a backlight module according to an embodiment of the present invention;

fig. 13 is a schematic structural diagram of a backlight module according to an embodiment of the present invention;

description of the reference numerals:

1-a driving substrate, 2-a light-emitting chip, 3-a fluorescent glue layer, 4-a diffusion layer, 5-a quantum dot layer, 6-a dam retaining wall, 7-a packaging layer, 8-an optical module, 801-a first diffusion film, 802-a first prism film, 803-a second diffusion film, 804-a second prism film, 9-a chip bonding region, 10-a first reflection layer, 11-a second reflection layer, and 12-a bonding pad;

Detailed Description

To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are given in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

At present, a fluorescent glue layer is usually disposed between a light emitting chip and a quantum dot layer of a backlight module, and the fluorescent glue layer is generally an integral structure formed by glue injection. The fluorescent glue layer with the integral structure is formed in a glue injection mode, the thickness of the fluorescent glue layer is not easy to control, and the fluorescent glue layer has the problem of uneven height. Therefore, the deviation of the color coordinates of the backlight is caused, the light emitting effect of the backlight module is influenced, and the picture quality is reduced.

Based on this, the present application intends to provide a solution to the above technical problem, the details of which will be explained in the following embodiments.

An alternative embodiment:

the present embodiment provides a backlight module, which is a key component of a liquid crystal display panel, and in different application scenarios, the backlight module may be but is not limited to a Mini-LED backlight module, and for example, may also be a Micro-LED backlight module, which may be a profiled LED backlight module or a non-profiled LED backlight module. In some applications, the backlight module may be, but is not limited to, a direct-type backlight module with a light source directly below. The backlight module in this embodiment may be, but is not limited to, a backlight module on various displays such as a mobile phone, an intelligent wearable device, a vehicle-mounted device, a video recorder, a notebook computer, a tablet computer, a television, a large screen, and a billboard.

As shown in fig. 1, the backlight module in this embodiment includes a driving substrate 1, a light emitting chip 2, a dam wall 6, a phosphor layer 3, and a quantum dot layer 5.

The driving substrate 1 may be, but not limited to, a glass substrate, a silicon substrate, a PCB substrate, etc., and this embodiment does not limit this. The light emitting chip 2 can be but not limited to an LED light emitting chip, and when the light emitting chip is an LED light emitting chip, the light emitting chip can include but not limited to a common-sized LED, and can also include a Micro LED chip, for example, including but not limited to a Mini-LED and a Micro-LED. The micro LED chip includes an epitaxial layer and an electrode (including a positive electrode and a negative electrode) disposed on the epitaxial layer, and the micro LED chip in this embodiment may be a forward-mounted LED chip or a flip-chip LED chip, which is not particularly limited in this embodiment.

As shown in fig. 1 and 2, the driving substrate 1 of the present embodiment has a plurality of chip bonding regions 9 on one side, and pads 12 are disposed in the chip bonding regions 9.

In the present embodiment, the drive substrate 1 includes drive control circuits that control the respective chip bonding regions 9. The light-emitting chips 2 are arranged in the chip bonding regions 9, and the light-emitting chips 2 are bonded with the corresponding bonding pads 12 to realize the electric connection of the light-emitting chips 2 and the bonding regions. Because the driving substrate 1 can respectively control the electric conduction state of each chip bonding region 9, the partition control of each light-emitting chip 2 is realized, and all the light-emitting chips 2 bonded by one chip bonding region 9 form one pixel point of the display.

For example, one light emitting chip 2 bonded to the chip bonding region 9 may be provided, as shown in fig. 3, that is, one light emitting chip 2 is one pixel point of the display, and for another example, as shown in fig. 4, a plurality of light emitting chips 2 may also be provided, for example, 2, 3, 4 or more light emitting chips, for example, 9 light emitting chips as shown in fig. 5 may also be provided, which is not limited in this embodiment. In addition, the shape of the chip bonding region 9 may be a regular rectangle, a circle or a polygon, or may be an irregular shape, which is not limited in this embodiment.

As shown in fig. 3-5, the dam walls 6 of the present embodiment are disposed on the driving substrate 1 to enclose the chip bonding regions 9 therein. It should be understood that the above-mentioned enclosing is that each die bonding region 9 is enclosed by the dam 6, and the dam 6 also separates each die bonding region 9, so that each die bonding region 9 is structurally independent.

The dam retaining wall 6 may be made of, but not limited to, a transparent or translucent material, such as a silicon-based transparent packaging adhesive, and during the manufacturing process, the dam retaining wall 6 may be formed by dispensing, or may also be manufactured by using a steel mesh printing method, or may be molded first and then fixed on the driving substrate 1 by adhesion or other methods, which is not limited in this embodiment.

The fluorescent glue layer 3 of the embodiment is arranged in each chip bonding region 9, and covers the light-emitting chip 2 in each chip bonding region 9, and the fluorescent glue layer 3 in the adjacent chip bonding region 9 is separated by the dam retaining wall 6. The fluorescent glue layer 3 can play a role in packaging the light-emitting chip 2 and is used for protecting the light-emitting chip 2.

It should be understood that the partition means blocking and breaking, and the dam retaining wall 6 can partition the phosphor layer 3 into a plurality of phosphor layers 3 distributed in an array. Therefore, the light emitting chips 2 in the display pixel points are respectively covered by the fluorescent glue layers 3, namely the light emitting chips 2 in one control unit are covered by one fluorescent glue layer 3, so that the fluorescent glue layers 3 are in an array structure distributed along with the partition control layout of the light emitting chips 2, and the light control quality of each light emitting unit is better guaranteed. In addition, the fluorescent glue layer 3 can be formed in each chip bonding region 9 by glue injection. The transparent adhesive in the fluorescent adhesive layer 3 can be, but not limited to, a silicon-based transparent adhesive, for example, any one of silicone resin and epoxy resin can also be used, and the embodiment is not particularly limited thereto.

The quantum dot layer 5 of the present embodiment is disposed on the phosphor layer 3. The quantum dot layer 5 can be formed and then fixed on the phosphor layer 3, or can be directly formed on the phosphor layer 3.

It should be understood that "upper" and "lower" in the present embodiment are merely used to explain the relative position arrangement in the structure, and are merely illustrative and not restrictive in particular.

The backlight module is characterized in that the dam retaining wall 6 arranged on the driving substrate 1 is used for enclosing the chip bonding areas 9 respectively, so that the dam retaining wall 6 can be used for blocking the corresponding chip bonding areas 9 to form the fluorescent glue layers 3 through glue injection molding, and a plurality of fluorescent glue layers 3 separated by the dam retaining wall 6 are formed. The flow of each fluorescence glue film 3 when the injecting glue can receive the restriction of box dam barricade 6 for each fluorescence glue film 3 all can be filled in box dam barricade 6 well, and the thickness of each fluorescence glue film 3 all can obtain accurate control, has guaranteed the height homogeneity of fluorescence glue film on thickness, has solved the problem of the colour coordinate skew of being shaded that leads to because of fluorescence glue film error in thickness, makes backlight unit possess good light-emitting effect, has improved the picture quality. Meanwhile, the fluorescent glue layer 3 is arranged between the quantum dot layer 5 and the light-emitting chip 2, so that the excitation effect of the light source is better, the coverage of a higher color gamut can be realized, and the light-emitting effect of the backlight module is improved.

In one embodiment, as shown in fig. 1, the height of the dam wall 6 is greater than the thickness of the phosphor layer 3. It should be understood that the height of the dam retaining wall 6 is the distance from the upper end of the dam retaining wall 6 to the upper side of the driving base plate 1, and the thickness of the phosphor layer 3 is the distance from the upper side of the phosphor layer 3 to the upper side of the driving base plate 1. In this embodiment, the quantum dot layer 5 is embedded in one side of the dam retaining wall 6 away from the driving substrate 1, as shown in fig. 12, the quantum dot layer 5 is embedded in the upper end portion of the dam retaining wall 6, so that the lower side surface of the quantum dot layer 5 is directly contacted with the phosphor layer 3, which is more favorable for light absorption of the quantum dot layer 5.

In another embodiment, as shown in fig. 13, the height of the dam retaining wall 6 may also be equal to the thickness of the phosphor layer 3.

Specifically, as shown in fig. 6, the thickness H2 of the fluorescent glue layer 3 may be 1.5-2 times, such as 1.5 times, 1.75 times or 2 times, the height H3 of the light emitting chip 2; the height H1 of the dam retaining wall 6 is 2 to 3 times, for example, 2 times, 2.5 times or 3 times, the height H3 of the light emitting chip 2. In this range, the dam retaining wall 6 can not only ensure the high quality of the formed fluorescent glue layer 3 after glue injection, but also enable the fluorescent glue layer 3 to have better excitation effect on light. In this embodiment, the width D2 of the dam retaining wall 6 may be set to be 1/3-1/2 of the gap D1 between the adjacent light emitting chips 2.

The backlight module in this embodiment further includes an encapsulation layer 7, and an optical module 8 disposed on the encapsulation layer 7, wherein the encapsulation layer 7 covers the quantum dot layer 5. The encapsulation layer 7 is made of transparent material, and may be made of any one of silica gel, silicone resin, and epoxy resin. During manufacturing, the quantum dot layer 5 can be manufactured by gluing or molding. The quantum dot layer 5 is completely covered by the packaging layer 7, so that the quantum dot layer 5 is packaged, and the quantum dot material in the quantum dot layer 5 is prevented from being corroded by water and oxygen.

It should be understood that the optical module 8 is an assembly for adjusting the light-emitting effect of the backlight module through optical action, and includes various optical films, for example, as shown in fig. 10, the optical module 8 includes, in order from bottom to top, a first diffusion film 801, a first prism film 802, a second prism film 803, and a second diffusion film 804, or may also include, in order from bottom to top, a first diffusion film 801, a brightness enhancement film, and a second diffusion film 803, as shown in fig. 11. The brightness uniformity and brightness of the backlight can be further improved by the action of the optical module 8.

Yet another alternative embodiment:

the present embodiment provides a backlight module, the rest of the structure is the same as the previous embodiment, but it is different from the previous embodiment,

a first reflective layer 10 is disposed on one side of the dam retaining wall 6 facing the light emitting chip 2, as shown in fig. 8;

and/or, a second reflective layer 11 is disposed on the driving substrate 1, and the second reflective layer 11 is located in the die bonding region 9 and between the adjacent light emitting dies 2, as shown in fig. 9.

The first reflective layer 10 and the second reflective layer 11 can be made of a metal plating layer, such as copper, silver, aluminum, etc., and the embodiment is not limited in particular. The first reflective layer 10 can block the side light of the light emitting chip 2 to prevent color crosstalk, and also can improve the utilization rate of light. The reflecting layer enables the light emitted by each partition control unit to be collimated as much as possible, the light of each partition control unit can be mutually independent, the phenomena of light leakage and halo are avoided when a high-contrast picture is displayed, and the display has higher definition and dynamic contrast.

In this embodiment, as shown in fig. 1, a diffusion layer 4 is disposed between the phosphor layer 3 and the quantum dot layer 5.

The diffusion layer 4 can scatter the light emitted by each partition control unit, so that the quantum dot layer 5 can be excited more uniformly, and the problems of over-strong local light and non-uniform color are avoided. The diffusion layer 4 may be made of, but not limited to, acrylic particles, and may be formed on the fluorescent adhesive layer 3 by imprinting, or may be formed first and then fixed on the fluorescent adhesive layer 3, which is not limited in this embodiment.

It should be understood that when the diffusion layer 4 is provided, the side of the dam wall 6 away from the driving substrate 1 is embedded in the quantum dot layer 5, as shown in fig. 1, and the lower side of the quantum dot layer 5 is in direct contact with the diffusion layer 4, which is also advantageous for light absorption of the quantum dot layer 5. When the height of the dam retaining wall 6 is greater than the thickness of the fluorescent glue layer 3, the diffusion layers 4 are a plurality of independent parts separated and blocked by the dam retaining wall 6, and each diffusion layer 4 is respectively positioned in the corresponding chip bonding region 9; when the height of the dam wall 6 is equal to the thickness of the phosphor layer 3, as shown in fig. 13, the diffusion layer 4 is an integrated layer structure located on the phosphor layer 3.

In one example, the light emitting chip 2 includes a blue LED chip having a wavelength of 400nm-420nm, and the quantum dots in the quantum dot layer 5 are green quantum dots; the fluorescent powder in the fluorescent glue layer 3 is red fluorescent powder.

The blue LED chip with the wavelength of 400nm-420nm is closer to an ultraviolet light wave band, so that fluorescent powder and quantum dot materials can be excited more completely, and the displayed color is purer. Certainly, the blue LED chip in some application scenarios may also be a chip emitting light with a wavelength less than 400nm or greater than 420nm, so that the blue LED chip can emit blue light.

The phosphor may be, but is not limited to, one or more of a silicate, garnet, aluminate, nitride. The half-wave width of the emission spectrum of the fluoride fluorescent powder is narrow and can reach less than 5nm, the energy of light waves is high, and the displayed color gamut coverage rate can be greatly improved.

The green quantum dots may be perovskite quantum dot materials, including but not limited to cesium lead halide perovskite, which may be core or shell structures, and the present example is not particularly limited thereto.

In this example, the blue light emitted by the blue LED chip is divided into three parts: the first part of blue light excites the fluorescent material in the fluorescent glue layer 3 to be converted into red light, the second part of blue light penetrates through the fluorescent glue layer 3 and then is converted into green light after continuing the green quantum dot layer 5, the third part of blue light still maintains the blue light after penetrating through the red fluorescent glue layer 3 and the green quantum dot layer 5, and the red, the green and the blue lights are mixed to form a white light backlight source.

In another example, the light emitting chip 2 is a blue LED chip, and the quantum dots in the quantum dot layer 5 are red quantum dots; the fluorescent powder in the fluorescent glue layer 3 is green fluorescent powder. The blue light emitted by the blue light LED chip can be divided into three parts, and the three parts respectively emit red, green and blue light to be mixed to form a white light backlight source.

The backlight module can not only respectively inject glue to the corresponding chip bonding regions 9 to form the fluorescent glue layers 3 through the blocking effect of the dam retaining walls 6. The thickness of each fluorescent glue layer 3 can be accurately controlled, the height uniformity of the fluorescent glue layers 3 on the thickness is ensured, and the picture quality is improved. Meanwhile, the arranged first reflecting layer 10 and the second reflecting layer 11 can enable light emitted by each partition control unit to be collimated as much as possible, and can realize mutual independence of the light of each partition control unit, so that the phenomena of light leakage and halo are avoided when a high-contrast picture is displayed, and the display has higher definition and dynamic contrast. The diffusion film that sets up breaks up the light that each subregion the control unit sent, can excite quantum dot layer 5 more evenly, avoids local light to appear the inhomogeneous problem of look excessively strong.

Yet another alternative embodiment:

the present embodiment provides a backlight module, as shown in fig. 1, the backlight module includes: the LED packaging structure comprises a driving substrate 1, a light-emitting chip 2, a dam retaining wall 6, a fluorescent glue layer 3, a diffusion layer 4, a quantum dot layer 5, a packaging layer 7 and an optical membrane. The material selection and processing technique of each part can be the same as those of the above embodiments, and are not described herein again.

In this embodiment, the light emitting chips 2 are arranged on the driving substrate 1 and respectively bonded with the corresponding chip bonding regions 9;

the dam retaining wall 6 is arranged on the driving substrate 1 and respectively encloses the chip bonding regions 9;

the fluorescent glue layer 3 is arranged in each chip bonding region 9 and covers the light-emitting chip 2 in each chip bonding region 9;

the diffusion layers 4 are of a non-integrated structure, the number of the diffusion layers corresponds to that of the fluorescent glue layers 3, and the diffusion layers are respectively positioned on the fluorescent glue layers 3 in the corresponding chip bonding regions 9;

the quantum dot layer 5 is arranged on the diffusion layer 4 and covers the dam retaining wall 6. In one example, as shown in fig. 10, the outer edge of quantum dot layer 5 covers the side wall surface of the outermost edge of dam retaining wall 6, and in another example, as shown in fig. 7, quantum dot layer 5 covers only the upper end of dam retaining wall 6, and the outer edge side wall surface of quantum dot layer 5 is flush with the side wall surface of the outermost edge of dam retaining wall 6 in the vertical direction.

The encapsulation layer 7 completely covers the quantum dot layer 5 forming a seal to the quantum dot layer 5.

The optical film is disposed on the encapsulation layer 7, and may be, but is not limited to, one or more of a diffusion film, a prism film, a light guide plate, or a light filter.

The backlight module can respectively inject glue to form the fluorescent glue layers 3 in the corresponding chip bonding areas 9 through the blocking effect of the dam retaining walls 6. The thickness of the formed fluorescent glue layer 3 can be accurately controlled, the height uniformity of the fluorescent glue layer 3 on the thickness is guaranteed, the backlight module has a good light emitting effect, and the picture quality is improved.

It is to be understood that the invention is not limited to the above-described embodiments, and that modifications and variations may be made by those skilled in the art in light of the above teachings, and all such modifications and variations are intended to be included within the scope of the invention as defined in the appended claims.

Claims

1. A backlight module, comprising:

the dam retaining wall is arranged on the driving substrate and used for enclosing the chip bonding regions respectively;

the fluorescent glue layer is arranged in each chip bonding region and covers the light-emitting chip in each chip bonding region, and the fluorescent glue layer in the adjacent chip bonding region is partitioned by the dam retaining wall;

and a quantum dot layer arranged on the fluorescent glue layer.

2. The backlight module as claimed in claim 1, wherein the driving substrate includes a driving control circuit for respectively controlling the chip bonding regions.

3. The backlight module as claimed in claim 1, wherein the height of the dam walls is greater than or equal to the thickness of the phosphor layer.

4. The backlight module as claimed in claim 3, wherein when the height of the dam walls is greater than the thickness of the phosphor layer,

one side of the dam retaining wall, which is far away from the driving substrate, is embedded into the quantum dot layer.

5. The backlight module according to any of claims 1-4, wherein a first reflective layer is disposed on a side of the dam wall facing the light emitting chips.

6. The backlight module according to any of claims 1-4, wherein a second reflective layer is disposed on the driving substrate, and the second reflective layer is disposed in the chip bonding region and between adjacent light emitting chips.

7. The backlight module according to any of claims 1-4, wherein a diffusion layer is disposed between the phosphor layer and the quantum dot layer.

8. The backlight module according to any one of claims 1 to 4, wherein the thickness of the phosphor layer is 1.5 to 2 times the height of the light emitting chip;

the height of the dam retaining wall is 2-3 times of the height of the light-emitting chip.

9. The backlight module according to any one of claims 1-4, wherein the light emitting chip comprises a blue LED chip having a wavelength of 400nm-420nm, and the quantum dots in the quantum dot layer are green quantum dots; the fluorescent powder in the fluorescent glue layer is red fluorescent powder.

10. The backlight module according to any of claims 1-4, wherein the backlight module further comprises an encapsulation layer, and an optical module disposed on the encapsulation layer, the encapsulation layer covering the quantum dot layer.