CN217588857U - Wafer calibrator and wafer production equipment - Google Patents
Wafer calibrator and wafer production equipment Download PDFInfo
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- CN217588857U CN217588857U CN202122994797.XU CN202122994797U CN217588857U CN 217588857 U CN217588857 U CN 217588857U CN 202122994797 U CN202122994797 U CN 202122994797U CN 217588857 U CN217588857 U CN 217588857U
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Abstract
The embodiment of the application discloses wafer calibrator and wafer production facility, wafer calibrator include casing, plummer, surface detector and photoelectric sensor, and the plummer sets up in the casing, and the plummer is used for bearing the wafer, and surface detector sets up in shells inner wall, and surface detector is used for detecting the roughness of the wafer on the plummer, and photoelectric sensor sets up in the casing, and photoelectric sensor is used for detecting the position of wafer on the plummer. When the wafer rotates on the bearing table, the photoelectric sensor detects the position of the wafer on the bearing table, the surface detector detects the surface roughness of the wafer, and the wafer with the abnormal surface is taken out without influencing the production period of the wafer, so that the phenomenon that the abnormal surface of the wafer discharges to damage the process cavity after the wafer with the abnormal surface enters the process cavity is avoided.
Description
Technical Field
The application relates to the field of wafer calibration equipment, in particular to a wafer calibrator and wafer production equipment.
Background
Wafer refers to a silicon wafer used for making silicon semiconductor circuits, the starting material of which is silicon. After the silicon crystal bar is ground, polished and sliced, a silicon wafer, namely a wafer, is formed. In the actual production process, the wafer is carried out from the material carrying box by the mechanical arm and then is transported into the wafer calibrator, a notch is formed in the wafer, the center of the circle of the wafer and the coordinates of the notch of the wafer are positioned by a photoelectric sensor in the wafer calibrator, the notch of the wafer is used for aligning to the preset direction, and after the wafer enters the process cavity, the center of the circle of the wafer and the notch of the wafer are both located at the preset position in the process cavity.
SUMMERY OF THE UTILITY MODEL
The application provides a wafer calibrator, including casing, plummer, surface detector and photoelectric sensor, the plummer sets up in the casing, and the plummer is used for bearing the weight of the wafer, and surface detector sets up in shells inner wall, and surface detector is used for detecting the roughness of the wafer on the plummer, and photoelectric sensor sets up in the casing, and photoelectric sensor is used for detecting the position of wafer on the plummer.
The wafer is conveyed to the bearing table by the mechanical arm, the wafer is provided with a notch, the bearing table can drive the wafer to rotate, the photoelectric sensor is arranged in the shell and located on one side of the wafer, and the photoelectric sensor acquires the edge data of the wafer and the data of the notch of the wafer and obtains the center of the circle of the wafer and the coordinates of the notch of the wafer through calculation of the photoelectric sensor. In the embodiment, when data of the edge of the wafer and the notch of the wafer are collected, that is, when the wafer rotates on the bearing table, the surface roughness of the wafer is detected by the surface detector, the roughness value of the surface of the wafer meeting the manufacturing requirement is a reference value, the roughness value detected by the surface detector needs to be compared with the reference value, and if the value obtained by the surface detector is greater than the reference value, the wafer with the sharp point on the surface is represented, and the wafer with the sharp point on the surface needs to be removed. The design can remove the wafer with abnormal surface before the wafer enters the process cavity without influencing the cycle of wafer production, so as to avoid the phenomenon that the abnormal surface of the wafer discharges to damage the process cavity after the wafer with abnormal surface enters the process cavity.
In one embodiment, the photoelectric sensor includes a fixing member, a light projector and a light receiver, the light receiver and the light projector are respectively located at two ends of the fixing member, the bearing table is located at one side of the fixing member, the bearing table is located between the light projector and the light receiver, and the light receiver is used for receiving light emitted by the light projector and penetrating through the wafer gap.
The light projector and the light receiver can acquire data of the edge of the wafer and calculate coordinates of the circle center of the wafer, when the wafer rotates, the light receiver can receive light transmitted by the light projector through the notch of the wafer, when the notch of the wafer rotates to a position between the light projector and the light receiver, the light receiver can receive light transmitted by the light projector, and at the moment, the photoelectric sensor can calculate coordinates of the notch of the wafer.
In one embodiment, the surface detector includes a light source, a first collimating lens, a beam splitter prism, a first objective lens, a reflector, a second objective lens, a second collimating lens, and a CCD (charge coupled device) camera, all disposed within a housing; the light source, the first collimating lens, the beam splitting prism, the first objective lens and the bearing table are sequentially arranged in the shell at intervals along a first direction; the reflector, the second objective, the beam splitting prism, the second collimating lens and the CCD camera are sequentially arranged in the shell at intervals along the second direction, and the first direction is perpendicular to the second direction.
The detection principle of the surface detector is as follows: the light beam emitted by the light source is collimated by the first collimating lens to form a parallel light beam, the parallel light beam is irradiated to the beam splitting prism and then divided into a first light beam and a second light beam, the first light beam is irradiated to the first objective lens, the second light beam is irradiated to the second objective lens, the first light beam is irradiated to the surface of the wafer after passing through the first objective lens, the first light beam can be reflected by the surface of the wafer and is reflected to the first objective lens, the first light beam passes through the first objective lens again, the first light beam is irradiated to the beam splitting prism after passing through the first objective lens again, the first light beam is irradiated to the second collimating lens by the beam splitting prism, and the first light beam is converged to the CCD camera by the second collimating lens; the second light beam irradiates the second objective and then irradiates the reflector, the reflector reflects the second light beam to the second objective, the second light beam passes through the second objective again, the second light beam irradiates the beam splitter prism after passing through the second objective, the beam splitter prism irradiates the second light beam to the second collimating lens, the second collimating lens converges the second light beam to the CCD camera, the first light beam and the second light beam interfere on the CCD camera to form interference fringes, the CCD camera is electrically connected with a computer, the interference fringes on the CCD camera can be displayed on a computer screen, and then the roughness of the surface of the wafer is analyzed.
In one embodiment, the light projector of the photosensor is located between the first objective lens and the stage.
The light projector of the photoelectric sensor is arranged between the first objective lens and the bearing table, the path of the mechanical arm for conveying the wafer is located between the bearing table and the light projector, and the first objective lens is located on one side, far away from the bearing table, of the light projector so as to avoid the mechanical arm from colliding with the first objective lens when the mechanical arm conveys the wafer.
In an embodiment, the projection of the first objective lens on the carrier table does not overlap with the projection of the light projector on the carrier table.
The projection of the first objective lens on the bearing table is not overlapped with the projection of the light projector on the bearing table, namely, the positions of the first objective lens and the position of the light projector in the horizontal direction are staggered, so that the design can avoid the mutual interference between the light emitted by the light projector and the light irradiated to the surface of the wafer by the first objective lens, and can also avoid the mutual interference between the light emitted by the light projector and the light irradiated to the first objective lens by the surface of the wafer.
In one embodiment, the surface detector comprises a support, a probe, a cantilever, a laser generator, a receiver, a linear motion mechanism and a signal processor, wherein the probe is provided with a needle tip and a needle top, the needle tip is used for being in contact with the surface of a wafer, one end of the cantilever is connected with the needle top, the surface of the cantilever, which is far away from the probe, is a reflecting surface, and the other end of the cantilever is in sliding connection with the support; the laser generator is arranged on the bracket and can emit laser beams which irradiate the reflecting surface; the receiver is arranged on the shell or the bracket and used for receiving the laser beam reflected by the reflecting surface; the linear motion mechanism is arranged on the inner wall of the shell, the support is arranged on the linear motion mechanism, and the support can move relative to the bearing table along the radial direction of the wafer; the linear motion mechanism and the receiver are electrically connected with the signal processor.
The probe is provided with a probe tip and a probe top, the probe tip of the probe is in contact with the surface of the wafer, and the probe tip can be in contact with any position of the surface of the wafer; one end of the cantilever is connected with the top of the probe, the surface of the cantilever, which is far away from the probe, is a reflecting surface, the other end of the cantilever is arranged on the support in a sliding manner, the cantilever slides on the support, namely, the probe can move in the height direction of the support, and the distance between the probe and the surface of the wafer can be changed by moving the cantilever on the support; the laser generator can emit laser beams to the reflecting surface, and the laser beams are emitted on the reflecting surface of the cantilever; the receiver is used for receiving the laser beam reflected by the reflecting surface and converting the optical signal into an electrical signal; the linear motion mechanism is arranged on the inner wall of the shell, the support is arranged on the linear motion mechanism, the linear motion mechanism can drive the support to move on the inner wall of the shell, and the support moves on the inner wall of the shell along the radial direction of the wafer; the signal processor is electrically connected with the linear motion mechanism and the receiver and is used for processing the electric signals of the receiver and further controlling the motion of the linear motion mechanism according to the signals fed back by the receiver, so that the support can move relative to the bearing table.
The principle of detecting the surface of the wafer by the surface detector is as follows: after the wafer is transferred to the susceptor by the robot arm, the wafer rotates, and there is very weak repulsive force (10 e) between the tip atoms of the tip and the surface atoms of the wafer －8 ～10e －6 N), the surface of the wafer is uneven, so that the probe drives the cantilever to bend, the bending of the cantilever changes the laser light path irradiated to the reflecting surface, the laser light spot reflected to the receiver moves, and the receiver converts the light spot displacement signal into a telecommunication signalThe signal processor can be a computer, the receiver feeds back the electric signal to the computer, the computer can further analyze the electric signal to obtain the roughness of the surface of the wafer, the computer can also control the motor of the linear motion mechanism to rotate according to the electric signal fed back by the receiver, the support makes linear motion on the screw rod, namely, the probe makes linear motion on the surface of the wafer, the linear motion of the probe is combined with the rotary motion of the wafer, and the probe can reach any position on the surface of the wafer.
In one embodiment, the light projector is positioned between the tip and the carrier when the surface detector is not detecting.
The wafer is required to be conveyed to the bearing platform by the mechanical arm, and the conveying path of the mechanical arm is located between the bearing platform and the light projector, so that the probe is arranged at one end of the light projector far away from the bearing platform, the wafer can be smoothly conveyed by the mechanical arm, and the mechanical arm is prevented from colliding with the probe and the light projector.
In one embodiment, the projection of the probe on the carrier table does not overlap with the projection of the light projector on the carrier table.
The projection of the probe on the bearing table is not overlapped with the projection of the light projector on the bearing table, so that the probe and the cantilever cannot collide with the photoelectric sensor when the probe detects the surface of the wafer.
In one embodiment, the susceptor further includes a chuck, a rotary base and a rotary motor, the chuck is disposed in the housing and used for adsorbing the wafer; the sucker is arranged on the rotary seat, and one end of the rotary seat, which is far away from the sucker, is arranged on the inner wall of the shell; the output shaft of the rotating motor is connected with the rotating seat to drive the rotating seat to rotate.
The sucker is arranged on the shell, the wafer is conveyed to the sucker by the mechanical arm, and the wafer is placed on the sucker; the sucker is connected with the rotary seat, the rotary seat is arranged on the inner wall of the shell and can enable the sucker to rotate, namely, the rotary seat can enable the wafer to rotate; the output shaft of rotating electrical machines is connected with the roating seat, and during rotating electrical machines's rotation, the roating seat drives the sucking disc and rotates and then drive the wafer rotatory, and at the rotatory in-process of wafer, linear motion mechanism can drive the support and radially move for the plummer along the wafer at the casing inner wall, and this design can make the probe scan the wafer optional position on the surface.
The embodiment of the application further provides wafer production equipment, which comprises the wafer calibrator, wherein the wafer production equipment can produce wafers, in some embodiments, the wafer production equipment further comprises a production machine table, the production machine table comprises one or more process chambers, the wafer calibrator is arranged at the inlets of the process chambers, and the wafers with abnormal surfaces can be removed in time without changing the production period of the wafers, so that the wafers with abnormal surfaces are prevented from entering the process chambers, discharging is carried out in the process chambers, and the process chambers are damaged.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments or related technologies of the present application, the drawings needed to be used in the description of the embodiments or related technologies are briefly introduced below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic view of a wafer and a position structure of a photo sensor according to an embodiment of the present disclosure;
FIG. 2 is a schematic diagram of a wafer aligner in accordance with an embodiment of the present application;
FIG. 3 is a schematic diagram of a wafer aligner according to yet another embodiment of the present application;
FIG. 4 is a schematic structural diagram of a linear motion mechanism according to an embodiment of the present application;
fig. 5 is a schematic structural diagram of a wafer aligner when a surface detector is not detecting according to an embodiment of the present application.
Reference numerals: wafer aligner-100; wafer-200; a shell-10; a bearing platform-20; a limiting groove-21; a suction cup-22; a rotating base-23; surface detector-30; a light source-301; a first collimating lens-302; a beam splitter prism-303; a first objective lens-304; a mirror-305; a second objective lens-306; a second collimating lens-307; CCD camera-308; a support-311; a probe-312; a needle tip-3121; needle tip-3122; cantilever-313; a reflective surface-3131; a laser generator-314; -a receiver-315; a linear motion mechanism-316; motor-3161; coupling-3162; lead screw-3163; a nut-3164; a photosensor-40; a fixing piece-41; a light projector-42; a light receiver-43; a notch-A; a first light beam-B; a second light beam-C.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
In the production process of the wafer, the dry etching is to generate plasma gas after chemical gas is ionized, the plasma gas etches the surface of the wafer, partial charges can be brought to the surface of the wafer when the plasma gas etches the surface of the wafer, if the surface of the wafer has tips, a large amount of charges are accumulated at the tips to cause discharge at the tips, the wafers are scrapped due to the discharge of the tips, the process cavity can be damaged, and manpower and material resources are needed for maintenance and overhaul of the process cavity, so that the maintenance and overhaul cost is increased. Therefore, the wafer with abnormal surface needs to be taken out before the wafer enters the process chamber, however, the production process of the wafer is very complicated, and if a process of detecting the sharp end of the surface of the wafer is added before the wafer enters the process chamber, the production cycle of the wafer is prolonged.
Referring to fig. 1-2, the present application provides a wafer aligner 100, which includes a housing 10, a susceptor 20, a surface detector 30 and a photoelectric sensor 40, wherein the susceptor 20 is disposed in the housing 10, the susceptor 20 is used for carrying a wafer 200, the surface detector 30 is disposed in the housing 10, the surface detector 30 is used for detecting a surface roughness of the wafer 200 on the susceptor 20, the photoelectric sensor 40 is disposed in the housing 10, and the photoelectric sensor 40 is used for detecting a position of the wafer 200 on the susceptor 20.
The surface roughness of the wafer 200 is increased by the sharp edge of the surface of the wafer 200, and the surface detector 30 can detect and calculate the surface roughness of the wafer 200. The roughness value of the surface of the wafer 200 meeting the manufacturing requirements is detected and recorded manually or by a computer, the roughness value is used as a reference value, the roughness value of the surface of the wafer 200 detected by the surface detector 30 is recorded, and the two roughness values are compared. If the value obtained by the surface detector 30 is greater than the reference value, the surface of the wafer 200 is sharp.
The susceptor 20 is located in the housing 10, the wafer 200 is transported to the susceptor 20 by a robot, the susceptor 20 is used for carrying the wafer 200, and the wafer 200 can rotate on the susceptor 20; the surface inspecting apparatus 30 is used for inspecting the roughness of the surface of the wafer 200 on the susceptor 20, and the surface inspecting apparatus 30 is located in the housing 10.
The photoelectric sensor 40 is used for detecting the coordinates of the center of the circle of the wafer 200 and the coordinates of the notch a of the wafer 200, and the photoelectric sensor 40 is located in the housing 10.
The working principle of the wafer aligner 100 for positioning the center of the wafer 200 and positioning the notch a of the wafer 200 is as follows: the wafer 200 has a notch a, the wafer 200 can rotate on the susceptor 20, during the rotation of the wafer 200, the photoelectric sensor 40 can collect data of the edge of the wafer 200 and the notch a of the wafer 200, and can calculate coordinates of the center of a circle of the wafer 200 and coordinates of the notch a of the wafer 200, and the robot arm can grab the wafer 200 according to the coordinates of the center of a circle of the wafer 200 and the coordinates of the notch a of the wafer 200 and convey the wafer 200 to the process chamber, so that the wafer 200 can be placed at a preset position and can be aligned to a preset direction in the process chamber.
The wafer 200 is transported to the susceptor 20 by a robot arm, the wafer 200 has a notch a, the wafer 200 rotates on the susceptor 20, after the wafer 200 is placed on the susceptor 20, the photoelectric sensor 40 is located at one side of the wafer 200, and the photoelectric sensor 40 can collect data of the edge of the wafer 200 and the notch a of the wafer 200 and can calculate coordinates of the center of the circle of the wafer 200 and coordinates of the notch a of the wafer 200. Before the wafer 200 enters the process chamber, the center of the wafer 200 and the notch a of the wafer 200 need to be positioned in the wafer aligner 100, in this embodiment, when the photoelectric sensor 40 collects data of the wafer 200, that is, when the wafer 200 rotates on the susceptor 20, the surface detector 30 detects the surface roughness of the wafer 200, and if the value obtained by the surface detector 30 is greater than the reference value, it indicates that a tip appears on the surface of the wafer 200, that is, the surface of the wafer 200 is abnormal, and the wafer 200 with the abnormal surface needs to be removed. The design takes out the wafer 200 with abnormal surface before the wafer 200 enters the process chamber without influencing the production cycle of the wafer 200, so as to prevent the abnormal surface of the wafer 200 from generating discharge phenomenon to damage the process chamber after the wafer 200 with abnormal surface enters the process chamber.
With reference to fig. 1-2, in an embodiment, the photo sensor 40 includes a fixing member 41, a light projector 42, and a light receiver 43, the light receiver 43 and the light projector 42 are respectively located at two ends of the fixing member 41, the susceptor 20 is located at one side of the fixing member 41, the susceptor 20 is located between the light projector 42 and the light receiver 43, and the light receiver 43 is used for receiving light emitted by the light projector 42 and passing through the notch a of the wafer 200.
The photoelectric sensor 40 includes a fixture 41, a light projector 42, and a light receiver 43, the fixture 41 is disposed in a vertical state in the housing 10, the light receiver 43 is disposed at an end of the fixture 41 away from the surface inspection apparatus 30, the light projector 42 is disposed at an end of the fixture 41 away from the light receiver 43, when the wafer 200 is placed on the susceptor 20, the wafer 200 is disposed between the light projector 42 and the light receiver 43, and the light projector 43 and the light receiver 42 can collect edge data of the wafer 200 during rotation of the wafer 200. Since the light receiver 43 can receive the light emitted from the light projector 43 and passing through the notch a of the wafer 200, when the notch a of the wafer 200 rotates to a position between the light projector 42 and the light receiver 43, the light receiver 43 can receive the light emitted from the light projector 42, and at this time, the photoelectric sensor 40 can calculate the coordinates of the notch a of the wafer 200 and obtain the coordinates of the notch a of the wafer 200, so that the notch a can be aligned with the preset direction when the wafer 200 is placed on the robot arm.
With reference to fig. 2, in one embodiment, the surface detector 30 includes a light source 301, a first collimating lens 302, a beam splitter 303, a first objective lens 304, a reflector 305, a second collimating lens 306, a second collimating lens 307, and a CCD camera 308, wherein the light source 301, the first collimating lens 302, the beam splitter 303, the first objective lens 304, the second objective lens 306, the reflector 305, the second collimating lens 307, and the CCD camera 308 are disposed in the housing 10; the light source 301, the first collimating lens 302, the beam splitter prism 303, the first objective lens 304 and the stage 20 are sequentially disposed at intervals along a first direction in the housing 10; the reflector 305, the second objective 306, the beam splitter 303, the second collimating lens 307, and the CCD camera 308 are sequentially disposed at intervals in a second direction in the housing 10, and the first direction is perpendicular to the second direction.
The CCD is a photosensitive element, and a plurality of photosensitive elements, each called a pixel, are distributed over the CCD. The CCD is an extremely important component in the camera, and it has the function of converting light into electric signal, similar to human eyes, therefore, the performance of the CCD directly affects the performance of the camera, and in the related art, the CCD has the capabilities of wide spectral response range, wide dynamic range, multi-channel simultaneous signal detection and real-time monitoring, etc.
Light emitted by the light source 301 irradiates the first collimating lens 302, the first collimating lens 302 can collimate the divergent light beams into parallel light beams, the parallel light beams irradiate the beam splitter prism 303, the beam splitter prism 303 divides the parallel light beams into a first light beam B and a second light beam C, the first light beam B irradiates the wafer 200, and the first light beam B is reflected on the surface of the wafer 200; the second light beam C is a reference light beam, the second light beam C irradiates the reflector 305 and is reflected on the surface of the reflector 305, both the two light beams are reflected on the corresponding surfaces, and the two reflected light beams converge together to generate interference and generate interference fringes.
The detection principle of the surface detector 30 is as follows: a light beam emitted by the light source 301 is collimated by the first collimating lens 302 and then becomes a parallel light beam, the parallel light beam is transmitted to the beam splitter prism 303 and then is split into two paths of light paths, namely a first light beam B and a second light beam C, wherein the first light beam B is transmitted to the first objective lens 304, the first light beam B is transmitted to the surface of the wafer 200 after passing through the first objective lens 304, the first light beam B can be reflected by the surface of the wafer 200 and is reflected to the first objective lens 304, the first light beam B is transmitted to the beam splitter prism 303 after passing through the first objective lens 304 again, the beam splitter prism 303 transmits the first light beam B to the second collimating lens 307, and the second collimating lens 307 converges the first light beam B to the CCD camera 308; the second light beam C is transmitted to the second objective 306, the second light beam C passes through the second objective 306 and then is transmitted to the reflector 305, the reflector 305 reflects the second light beam C to the second objective 306, the second light beam C passes through the second objective 306 again, the second light beam C passes through the second objective 306 and then is transmitted to the beam splitter prism 303, the beam splitter prism 303 transmits the second light beam C to the second collimating lens 307, the second collimating lens 307 converges the second light beam C to the CCD camera 308, the first light beam B and the second light beam C interfere at the CCD camera 308 and form interference fringes, the CCD camera 308 is electrically connected with the computer, the interference fringes on the CCD camera 308 can be displayed on a computer screen, and the roughness of the measured surface of the wafer 200 can be analyzed.
With continued reference to fig. 1-2, in one embodiment, the light projector 42 of the photosensor 40 is located between the first objective lens 304 and the stage 20.
In the embodiment, the light projector 42 of the photoelectric sensor 40 is disposed between the first objective lens 304 and the susceptor 20 along the first direction, and since the path of the robot arm transporting the wafer 200 is located between the susceptor 20 and the light projector 42, the first objective lens 304 is disposed on a side of the light projector 42 away from the susceptor 20, so as to avoid the robot arm from colliding with the first objective lens 304 when transporting the wafer 200, in a specific embodiment, if the space required by the robot arm to transport the wafer 200 is small, one end of the first objective lens 304 close to the susceptor 20 may also be disposed in parallel with one end of the light projector 42 close to the susceptor 20, and it can be understood that the first objective lens 304 may also be disposed between the light projector 42 and the susceptor 20 without affecting the transportation of the wafer 200 by the robot arm.
With continued reference to fig. 2, in one embodiment, the projection of the first objective 304 on the carrier 20 does not overlap with the projection of the light projector 42 on the carrier 20.
In the present embodiment, along the first direction, the projection of the first objective lens 304 on the stage 20 and the projection of the light projector 42 on the stage 20 do not overlap, that is, the positions of the first objective lens 304 and the light projector 42 in the horizontal direction are staggered, so that the interference between the light emitted by the light projector 42 and the light transmitted from the first objective lens 304 to the surface of the wafer 200 can be avoided, and the interference between the light emitted by the light projector 42 and the light reflected from the surface of the wafer 200 to the first objective lens 304 can also be avoided.
Referring to fig. 3-5, in another embodiment, the surface inspecting apparatus 30 includes a support 311, a probe 312, a cantilever 313, a laser generator 314, a receiver 315, a linear motion mechanism 316, and a signal processor (not shown), the probe 312 has a tip 3121 and a tip 3122, the tip 3121 is configured to contact with a surface of the wafer 200, one end of the cantilever 313 is connected to the tip 3122, a surface of the cantilever 313 facing away from the probe 312 is a reflective surface 3131, and the other end of the cantilever 313 is slidably connected to the support 311; the laser generator 314 is disposed on the bracket 311, and the laser generator 314 can emit a laser beam, which is irradiated onto the reflective surface 3131; the receiver 315 is disposed on the housing 10 or the bracket 311, and is configured to receive the laser beam reflected by the reflective surface 3131; the linear motion mechanism 316 is disposed on the inner wall of the housing 10, and the support 311 is disposed on the linear motion mechanism 316, the support 311 can move along the radial direction of the wafer 200 relative to the susceptor 20; the linear motion mechanism 316 and the receiver 315 are electrically connected to the signal processor.
The probe 312 has a tip 3121 and a tip 3122, the tip 3121 of the probe 312 contacts the surface of the wafer 200, and the tip 3121 can contact any position of the surface of the wafer 200.
One end of the cantilever 313 is connected to the top 3122 of the probe 312, a surface of the cantilever 313 away from the probe 312 is a reflective surface 3131, the other end of the cantilever 313 is slidably disposed on the support 311, the cantilever 313 slides on the support 311, that is, the probe 312 slides in a height direction of the support 311, and the distance between the probe 312 and the surface of the wafer 200 can be changed by sliding the cantilever 313 on the support 311.
The laser generator 314 can emit a laser beam, and the laser beam emitted from the laser generator 314 can be irradiated to the reflective surface 3131, and the laser beam is emitted on the reflective surface 3131 of the cantilever 313.
The receiver 315 is disposed on the housing 10 or the bracket 311, and the receiver 315 is configured to receive the laser beam reflected by the reflection surface 3131 and convert the optical signal into an electrical signal.
The linear motion mechanism 316 is disposed on the inner wall of the housing 10, the support 311 is disposed on the linear motion mechanism 316, the linear motion mechanism 316 can drive the support 311 to move on the inner wall of the housing 10, and the support 311 moves on the inner wall of the housing 10 along the radial direction of the wafer 200. In a specific embodiment, a limiting groove 21 is formed in an inner wall of the housing 10, a length direction of the limiting long groove 21 is consistent with a moving direction of the support 311 on the linear motion mechanism 316, that is, the length direction of the limiting long groove 21 is consistent with a radial direction of the wafer 200, the linear motion mechanism 316 includes a motor 3161, a coupling 3162, a lead screw 3163, and a nut 3164, the nut 3164 is connected with the support 311, the motor 3161 drives the lead screw 3163 to rotate through the coupling 3162, the length direction of the lead screw 3163 is consistent with the radial direction of the wafer 200, a part of the nut 3164 abuts against a groove wall of the limiting groove 21, the limiting groove 21 is used for limiting the nut 3164 and the lead screw 3163 to rotate together, because the nut 3164 is partially located in the limiting groove 21, the lead screw 3163 rotates to drive the nut 3164 to linearly move on the lead screw 3163 along the length direction of the lead screw 3163, that is that the support 311 can linearly move on the linear motion mechanism 316 along the radial direction of the wafer 200, and the movement of the support 311 and the rotation of the wafer 200 occur simultaneously, so that the probe 312 can contact any position on the surface of the wafer 200 to detect roughness of the surface of the wafer 200.
The signal processor is electrically connected to the linear motion mechanism 316 and the receiver 315, and is configured to process an electrical signal of the receiver, so as to control the motor 3161 of the linear motion mechanism 316 to rotate according to the electrical signal fed back by the receiver 315, so that the support 311 can move relative to the carrier 20.
The principle of the surface inspection machine 30 for inspecting the surface roughness of the wafer 200 is as follows: the robot arm transfers the wafer 200 to the susceptorAfter 20, the wafer 200 is rotated and there is a very weak repulsive force (10 e) between atoms at the tip of the tip 3121 and atoms on the surface of the wafer 200 -8 ～10e -6 N), the surface of the wafer 200 undulates unevenly to make the cantilever 313 driven by the probe 312 bend, the bending of the cantilever 313 changes the optical path of the laser irradiated to the reflecting surface 3131, so that the laser spot reflected to the receiver 315 moves, the receiver 315 converts the spot displacement signal into an electrical signal and amplifies the electrical signal, and feeds the electrical signal back to the signal processor, the signal processor is electrically connected to the linear motion mechanism 316, the linear motion mechanism 316 adjusts the position of the support 311 according to the control signal of the signal processor, so as to adjust the contact position of the probe 312 and the surface of the wafer 200, so that the probe 312 scans the surface of the wafer 200 at any position, the receiver 315 feeds the electrical signal obtained by multiple detections back to the signal processor, the signal processor can be a computer, the computer further analyzes the electrical signal obtained by multiple detections of the receiver 315, and obtains the surface roughness of the wafer 200, the computer can also control the motor of the linear motion mechanism 316 to rotate according to the electrical signal fed back by the receiver 315, the support 311 makes a linear motion on the lead screw 3163, the probe 312 makes a linear motion on the surface of the wafer 200, and the linear motion of the probe 312 is combined with the rotational motion of the wafer 200, so that the probe 312 can reach any position of the wafer 200.
Referring to fig. 5, in one embodiment, the light projector 42 is located between the tip 3121 and the carrier 20 when the surface inspection apparatus 30 is not inspecting.
In the embodiment of the present invention, when the surface inspecting apparatus 30 does not inspect, the probe 312 does not contact the wafer 200, and the distance between the probe 312 and the surface of the wafer 200 is large, and the light projector 42 of the photoelectric sensor 40 is located between the tip 3121 and the stage 20 along the height direction. In the process of transporting the wafer 200 to the susceptor 20 by the robot arm, the transportation path of the robot arm is located between the susceptor 20 and the light projector 42, and therefore, the probe 312 is disposed at an end of the light projector 42 away from the susceptor, so that the robot arm can smoothly transport the wafer 200, and thus the robot arm is prevented from colliding with the probe 312 and the light projector 42, in one embodiment, if the space required by the robot arm to transport the wafer 200 is small, the tip 3121 of the probe 312 may also be disposed parallel to an end of the light projector 42 close to the susceptor 20, and it can be understood that the probe 312 may also be located between the light projector 42 and the susceptor 20 without affecting the transportation of the wafer 200 by the robot arm.
Referring to fig. 4 and 5, in one embodiment, the projection of the probe 312 on the carrier 20 is not overlapped with the projection of the light projector 42 on the carrier 20.
The projection of the probe 312 on the susceptor 20 does not overlap the projection of the light projector 42 on the susceptor 20, so that the probe 312 and the cantilever 313 do not collide with the photosensor 40 when the probe 312 detects the surface roughness of the wafer 200.
Referring to fig. 5, in one embodiment, the susceptor 20 further includes a chuck 22, a rotating base 23 and a rotating motor (not shown), the chuck 22 is disposed in the housing 10, and the chuck 22 is used for sucking the wafer 200; the sucking disc 22 is arranged on the rotating seat 23, and one end of the rotating seat 23 far away from the sucking disc 22 is arranged on the inner wall of the shell 10; an output shaft of the rotating motor is connected to the rotary base 23 to drive the rotary base 23 to rotate.
The chuck 22 is disposed in the housing 10, the wafer 200 is transported to the chuck 22 by a robot arm, the wafer 200 is placed on the chuck 22, and in one embodiment, a vacuum pump (not shown) is disposed in the wafer aligner 100 and is in communication with the chuck 22, and after the vacuum pump pumps air between the wafer 200 and the chuck 22, the wafer 200 and the chuck 22 are in a vacuum state, that is, the chuck 22 sucks the wafer 200 by the action of the vacuum pump.
The chuck 22 is connected to the rotary base 23, one end of the rotary base 23 away from the chuck 22 is disposed on the inner wall of the housing 10, and the rotary base 23 can rotate the chuck 22, that is, the rotary base 23 can rotate the wafer 200.
The output shaft of the rotating motor is connected to the rotating base 23, and when the rotating motor rotates, the rotating base 23 drives the suction cup 22 to rotate, so as to drive the wafer 200 to rotate. During the rotation of the wafer 200, the linear motion mechanism 316 drives the support 311 to move along the radial direction of the wafer 200 on the inner wall of the housing 10, and the probe 312 scans any position on the surface of the wafer 200. In one embodiment, the wafer aligner 100 further includes a controller (not shown), the controller is electrically connected to the photoelectric sensor 40, the rotation motor and the robot, the wafer 200 is transported to the wafer aligner 100 by the robot, the wafer 200 rotates on the susceptor 20, the photoelectric sensor 40 collects data at the edge of the wafer 200 and at the notch a of the wafer 200, the photoelectric sensor 40 can calculate the center coordinates of the wafer 200 and the notch a of the wafer 200, when the wafer 200 rotates to a predetermined position, that is, the notch a of the wafer 200 is aligned with a predetermined direction, the controller controls the rotation motor to stop rotating, the robot picks up the wafer 200 according to the center coordinates of the wafer 200 and the notch a coordinates of the wafer 200, and then places the wafer 200 at the predetermined position in the process chamber, such that the notch a of the wafer 200 is aligned with the predetermined direction.
The embodiment of the present invention further provides a wafer production apparatus (not shown in the drawings), which includes the above-mentioned wafer aligner 100, and the wafer production apparatus can produce the wafer 200, and in some embodiments, the wafer production apparatus further includes a production machine (not shown in the drawings), the production machine includes one or more process chambers (not shown in the drawings), the wafer aligner 100 is disposed at the entrance of each process chamber, and the wafer aligner 100 is disposed at the entrance of each process chamber, so that the wafer 200 with an abnormal surface can be taken out in time without changing the production cycle of the wafer 200, and the wafer 200 with an abnormal surface can be prevented from discharging in the process chamber and damaging the process chamber after entering the process chamber.
The same or similar reference numerals in the drawings of the present embodiment correspond to the same or similar elements; in the description of the present application, it is to be understood that if there is an orientation or positional relationship indicated by the terms "upper", "lower", "left", "right", etc. based on the orientation or positional relationship shown in the drawings, it is only for convenience of description and simplification of description, but it is not intended to indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and therefore, the terms describing the positional relationship in the drawings are only for illustrative purposes and are not to be construed as limitations of the present patent, and specific meanings of the above terms may be understood by those skilled in the art according to specific situations.
The present application is intended to cover various modifications, equivalent arrangements, and adaptations of the present application without departing from the spirit and scope of the present application.
Claims (11)
1. A wafer aligner, comprising:
a housing;
the bearing table is arranged in the shell and used for bearing the wafer;
the surface detector is arranged in the shell and used for detecting the surface roughness of the wafer on the bearing table;
the photoelectric sensor is arranged on the bearing table and used for detecting the position of the wafer on the bearing table.
2. The wafer aligner of claim 1 wherein the photosensor comprises a fixture, a light projector, and a light receiver, the light receiver and the light projector are respectively located at two ends of the fixture, the susceptor is located at one side of the fixture, the susceptor is located between the light projector and the light receiver, and the light receiver is configured to receive light emitted by the light projector through the wafer gap.
3. The wafer aligner of claim 2,
the surface detector comprises a light source, a first collimating lens, a beam splitter prism, a first objective lens, a reflector, a second objective lens, a second collimating lens and a CCD camera, wherein the light source, the first collimating lens, the beam splitter prism, the first objective lens, the reflector, the second objective lens, the second collimating lens and the CCD camera are all arranged in the shell;
the light source, the first collimating lens, the beam splitter prism, the first objective lens and the bearing table are sequentially arranged in the shell at intervals along a first direction;
the reflector, the second objective, the beam splitter prism, the second collimating lens and the CCD camera are arranged in the shell at intervals in sequence along a second direction, and the first direction is perpendicular to the second direction.
4. The wafer aligner of claim 3,
and a light projector of the photoelectric sensor is positioned between the first objective lens and the bearing table.
5. The wafer aligner of claim 3,
the projection of the first objective lens on the bearing platform is not overlapped with the projection of the light projector on the bearing platform.
6. The wafer aligner of claim 2 wherein the surface detector comprises:
a support;
a probe having a tip and a tip, the tip for contacting a surface of the wafer;
one end of the cantilever is connected with the needle top, the surface of the cantilever, which deviates from the probe, is a reflecting surface, and the other end of the cantilever is connected with the bracket in a sliding manner;
the laser generator is arranged on the bracket and can emit laser beams which irradiate onto the reflecting surface;
the receiver is arranged on the shell or the bracket and used for receiving the laser beam reflected by the reflecting surface;
the linear motion mechanism is arranged on the inner wall of the shell, the support is arranged on the linear motion mechanism, and the support can move relative to the bearing table;
and the linear motion mechanism and the receiver are electrically connected with the signal processor.
7. The wafer aligner of claim 6,
when the surface detector does not detect, the light projector is positioned between the needle point and the bearing platform.
8. The wafer aligner of claim 7,
the projection of the probe on the bearing platform is not overlapped with the projection of the light projector on the bearing platform.
9. The wafer aligner of claim 1 wherein the susceptor further comprises:
the sucker is arranged in the shell and used for sucking the wafer;
the sucker is arranged on the rotating seat, and one end of the rotating seat, which is far away from the sucker, is arranged on the inner wall of the shell;
and an output shaft of the rotating motor is connected with the rotating seat so as to drive the rotating seat to rotate.
10. A wafer production apparatus, comprising:
one or more wafer aligner as claimed in any one of claims 1-9.
11. The wafer production apparatus as claimed in claim 10, comprising:
the production machine comprises one or more process chambers, and the wafer calibrator is arranged at the inlet of each process chamber.
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| CN202122994797.XU CN217588857U (en) | 2021-11-30 | 2021-11-30 | Wafer calibrator and wafer production equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116772757A (en) * | 2023-08-21 | 2023-09-19 | 国镓芯科(成都)半导体科技有限公司 | Be used for semiconductor processing finished product measurement system |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116772757A (en) * | 2023-08-21 | 2023-09-19 | 国镓芯科(成都)半导体科技有限公司 | Be used for semiconductor processing finished product measurement system |
| CN116772757B (en) * | 2023-08-21 | 2023-10-24 | 国镓芯科(成都)半导体科技有限公司 | Be used for semiconductor processing finished product measurement system |
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