CN217588453U - Low-reflection ITO conductive film - Google Patents

Low-reflection ITO conductive film Download PDF

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CN217588453U
CN217588453U CN202221824757.9U CN202221824757U CN217588453U CN 217588453 U CN217588453 U CN 217588453U CN 202221824757 U CN202221824757 U CN 202221824757U CN 217588453 U CN217588453 U CN 217588453U
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layer
ito
conductive film
vanishing
film
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CN202221824757.9U
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关秀娟
于佩强
胡业新
刘世琴
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Jiangsu Rijiu Optoelectronics Joint Stock Co ltd
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Jiangsu Rijiu Optoelectronics Joint Stock Co ltd
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Abstract

The utility model discloses a low-reflection ITO conductive film, which comprises a substrate layer, a shadow eliminating layer and an ITO layer which are sequentially stacked; the refractive index of the vanishing layer is 1.7-1.75, and the difference between the refractive index of the vanishing layer and the refractive index of the ITO layer is less than or equal to 0.1. The utility model discloses an adjustment vanishing layer refracting index to 1.70 ~ 1.75, the layer refracting index that makes vanishing layer and ITO is closer, can obviously reduce the reflectivity, reduces the colour difference trace to can effectually alleviate mole line phenomenon, improve the sense organ vision of conductive film.

Description

Low-reflection ITO conductive film
Technical Field
The utility model relates to a conductive film technical field especially relates to a low reflection ITO conductive film.
Background
With the improvement of living standards and the development of science and technology, people have more and more requirements on the size of a display screen with a touch effect, but for large-size products, the requirements on the performance of the display screen with the touch effect on low sheet resistance and low reflectivity of a conductive material are very high.
At present, the conductive materials used for large-size touch screens mainly include metal mesh materials, nano-silver materials and low-resistance ITO (indium tin oxide) conductive materials. The metal grid material mainly adopts metal materials such as copper, silver and the like, has very good conductivity, but has the technical problem of moire interference, so that the metal grid material can only be used for low-resolution medium and low-end products. The nano silver material has good conductivity, and has been once considered as the best material to replace ITO conductive film. However, due to the natural characteristic that silver is easily oxidized, the haze and the environmental measurement performance of the nano silver material are poor.
The lower the resistance of the existing structure, the thicker the ITO conductive film layer is, the higher the reflectivity of the ITO conductive film is, so that the problems of poor matching molar grains (dry and unsmooth grains) and the like easily occur at the rear end, and the product yield is low
Therefore, in view of the above technical problems, it is necessary to provide a low reflective ITO conductive film.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a low reflection ITO conductive film, its reflectivity that can obviously reduce the conductive film reduces the colour difference trace to can effectually alleviate mole line.
In order to achieve the above purpose, the utility model provides a technical scheme as follows:
a low-reflection ITO conductive film comprises a substrate layer, a shadow eliminating layer and an ITO layer which are sequentially stacked; the refractive index of the vanishing layer is 1.7-1.75, and the difference between the refractive index of the vanishing layer and the refractive index of the ITO layer is less than or equal to 0.1.
In one or more embodiments, the refractive index of the ITO layer is 1.85 to 1.95.
In one or more embodiments, the ITO layer is formed on the surface of the shadow layer by a magnetron sputtering process.
In one or more embodiments, the thickness of the ITO layer is 30 to 100nm.
In one or more embodiments, the substrate layer is a PET film, a COP film, a PI film, a PC film, a PMMA film, a PP film, or a PE film.
In one or more embodiments, the substrate layer has a thickness of 6 to 188 μm.
In one or more embodiments, the vanishing layer is an acrylic resin layer.
In one or more embodiments, the shadow layer is formed on the surface of the substrate layer through a coating process.
In one or more embodiments, the thickness of the vanishing layer is 50 to 70nm.
Compared with the prior art, the utility model discloses an adjustment vanishing layer refracting index to 1.70 ~ 1.75, the layer refracting index that makes vanishing layer and ITO is closer, can obviously reduce the reflectivity, reduces the colour difference trace to can effectually alleviate mole line phenomenon, improve the sense organ vision of conductive film.
Drawings
FIG. 1 is a schematic structural diagram of a low-reflection ITO conductive film according to an embodiment of the present invention;
fig. 2 is a reflectance graph of the conductive film obtained in example 1 and comparative example 1 of the present invention.
Description of the main reference numerals:
1-substrate layer, 2-shadow eliminating layer and 3-ITO layer.
Detailed Description
The following detailed description of the present invention is provided in conjunction with the accompanying drawings, but it should be understood that the scope of the present invention is not limited by the following detailed description.
Throughout the specification and claims, unless explicitly stated otherwise, the word "comprise", or variations such as "comprises" or "comprising", will be understood to imply the inclusion of a stated element or component but not the exclusion of any other element or component.
Referring to fig. 1, the low-reflection ITO conductive film according to an embodiment of the present invention can be applied to the fields of displays, touch screens, and the like. The conductive film comprises a substrate layer 1, a vanishing layer 2 and an ITO layer 3 which are sequentially stacked. Wherein, the refractive index of the vanishing layer 2 is 1.7-1.75, and the difference between the refractive index of the vanishing layer 2 and the refractive index of the ITO layer 3 is less than or equal to 0.1.
In an exemplary embodiment, the refractive index of the ITO layer 3 is 1.85 to 1.95. The ITO layer 3 is formed on the surface of the vanishing layer 2 through a magnetron sputtering process, and the thickness of the ITO layer 3 is 30-100 nm. Specifically, the thickness of the ITO layer 3 may be any of the dimensions of 30nm, 30.5nm, 51.22nm, 82nm, 100nm, and the like, which are between 10 and 15 nm.
Furthermore, the aging temperature of the ITO layer 3 after film formation is 120-150 ℃, the aging time is 20-40 min, different film coating thicknesses correspond to different sheet resistances, the thickness of the ITO layer 3 can be set according to actual requirements, and the sheet resistance of the ITO layer 3 after aging is preferably 20-100 Ω.
In an exemplary embodiment, the substrate layer 1 is a PET (polyethylene terephthalate) film, a COP (cyclic olefin polymer) film, a PI (polyimide) film, a PC (polycarbonate) film, a PMMA (polymethyl methacrylate) film, a PP (polypropylene) film, or a PE (polyethylene) film, and films of different materials may be selected as the substrate layer 1 according to actual needs.
Specifically, the thickness of the base material layer 1 is 6 to 188 μm, and may be, for example, 6 to 188 μm such as 6 μm, 16 μm, 50.3 μm, 100 μm, 160 μm, 188 μm, and the thickness of the base material layer 1 may be selected as needed.
In an exemplary embodiment, the shadow eliminating layer 2 is an acrylic resin layer.
Specifically, the vanishing layer 2 is formed on the surface of the substrate layer 1 by a coating process, and the vanishing layer 2 can be coated by roll coating, spray coating, knife coating, and the like. The thickness of the vanishing layer 2 is 50 to 70nm, and may be any size between 50 to 70nm, such as 50nm, 56.5nm, 60nm, 65nm, 70nm, etc., and may be selected according to actual needs.
The present invention will be further described with reference to the following specific examples.
Example 1
Taking a PET film with the thickness of 50 mu m as a substrate layer 1, coating an acrylic resin layer with the thickness of 60nm on the substrate layer 1 as an extinction layer 2 (the refractive index is 1.75), and carrying out magnetron sputtering on the extinction layer 2 to form an indium tin oxide layer with the thickness of 50nm as an ITO layer 3; and aging at 150 ℃ for 40min to obtain the low-reflection ITO conductive film.
Comparative example 1
Taking a PET film with the thickness of 50 mu m as a substrate layer 1, coating an existing vanishing layer 2 (with the refractive index of 1.65) with the thickness of 60nm on the substrate layer 1, and carrying out magnetron sputtering on the existing vanishing layer 2 to form an indium tin oxide layer 3 with the thickness of 50nm as an ITO layer; aging at 150 deg.C for 40min to obtain conductive film.
The conductive films obtained in example 1 and comparative example 1 were subjected to the performance test, and the test results are shown in the following table:
Figure BDA0003746443860000041
the reflectance curves of the conductive films obtained in example 1 and comparative example 1 are shown in fig. 2.
The refractive index of the existing shadow eliminating layer is about 1.65, the existing shadow eliminating layer is directly matched with the ITO layer 3, the refractive index has large difference, and after the rear end is matched and subjected to line etching treatment, the etched area and the non-etched area have large refractive index difference, so that the chromatic aberration is poor, and the visual effect of the conductive film is influenced. And the utility model discloses an adjustment 2 refracting indexes of shadow eliminating layer to 1.70 ~ 1.75, make the layer refracting index of shadow eliminating layer 2 and ITO more be close, can obviously reduce the reflectivity, reduce the colour difference trace to can effectually alleviate mole line phenomenon, improve the sense organ vision of conductive film.
The foregoing descriptions of specific exemplary embodiments of the present invention have been presented for purposes of illustration and description. It is not intended to limit the invention to the precise form disclosed, and obviously many modifications and variations are possible in light of the above teaching. The exemplary embodiments were chosen and described in order to explain certain principles of the invention and its practical application, to thereby enable others skilled in the art to make and utilize various exemplary embodiments of the invention and various alternatives and modifications. It is intended that the scope of the invention be defined by the claims and their equivalents.

Claims (9)

1. A low-reflection ITO conductive film is characterized by comprising a substrate layer, a shadow eliminating layer and an ITO layer which are sequentially stacked;
the refractive index of the vanishing layer is 1.7-1.75, and the difference between the refractive index of the vanishing layer and the refractive index of the ITO layer is less than or equal to 0.1.
2. The low-reflection ITO conductive film according to claim 1, wherein the refractive index of the ITO layer is 1.85 to 1.95.
3. The ITO conductive film according to claim 2, wherein the ITO layer is formed on the surface of the vanishing layer by a magnetron sputtering process.
4. The low-reflection ITO conductive film according to claim 3, wherein the ITO layer has a thickness of 30 to 100nm.
5. The ITO conductive film with low reflection according to claim 1, wherein the substrate layer is a PET film, a COP film, a PI film, a PC film, a PMMA film, a PP film, or a PE film.
6. The ITO conductive film according to claim 5, wherein the substrate layer has a thickness of 6 to 188 μm.
7. The ITO conductive film with low reflection according to claim 1, wherein the shadow eliminating layer is an acrylic resin layer.
8. The ITO conductive film according to claim 7, wherein the vanishing layer is formed on the surface of the substrate layer by a coating process.
9. The ITO conductive film according to claim 8, wherein the thickness of the vanishing layer is 50 to 70nm.
CN202221824757.9U 2022-07-14 2022-07-14 Low-reflection ITO conductive film Active CN217588453U (en)

Priority Applications (1)

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CN202221824757.9U CN217588453U (en) 2022-07-14 2022-07-14 Low-reflection ITO conductive film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
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Publications (1)

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CN217588453U true CN217588453U (en) 2022-10-14

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