CN217562570U - Photoelectric detector - Google Patents
Photoelectric detector Download PDFInfo
- Publication number
- CN217562570U CN217562570U CN202221076167.2U CN202221076167U CN217562570U CN 217562570 U CN217562570 U CN 217562570U CN 202221076167 U CN202221076167 U CN 202221076167U CN 217562570 U CN217562570 U CN 217562570U
- Authority
- CN
- China
- Prior art keywords
- layer
- photovoltaic cell
- carrier transport
- transport layer
- array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model relates to the field of photoelectric technology, a photoelectric detector is disclosed. The utility model comprises a substrate, a photoelectric sensing structure array, a photovoltaic cell structure array and a packaging layer, wherein the photoelectric sensing structure array, the photovoltaic cell structure array and the packaging layer are arranged on the substrate; the photovoltaic cell structure array is positioned on one side of the photoelectric sensing structure array; the photoelectric sensing structure array and the photovoltaic cell structure array are wrapped by the packaging layer. The utility model discloses the integrated level will be promoted effectively, holistic space has been reduced, make holistic device become frivolous, and the efficiency of assembly has been promoted, it is integrated on same base plate with photoelectric sensing structure array and photovoltaic cell structure array, when making the device can realize the photoelectric detection function, still can carry out photoelectric conversion for device work energy supply, photovoltaic cell structure array can realize the conversion of light energy to electric energy, the electric energy of production can be stored to the external battery in through external circuit, and then for external circuit, external lamp source etc. provides the electric energy.
Description
Technical Field
The utility model relates to a photoelectric technology field, especially a photoelectric detector.
Background
The semiconductor detector has a plurality of types and applications, and is widely applied to the fields of military, scientific research representation, industrial and agricultural production, medical detection and the like. In recent years, with the portability and function diversification of mobile devices such as mobile phones and tablet computers, in order to better realize the identification function of the mobile devices, high-precision and high-sensitivity detection is required, and meanwhile, higher requirements are also placed on the lightness, thinness and integration of devices used in the mobile devices, but the existing photoelectric detector needs to be separately provided with a photoelectric sensing structure and a battery structure, so that the occupied volume of the photoelectric sensing structure and the battery structure is larger, and meanwhile, the difficulty in assembling the mobile devices is increased.
SUMMERY OF THE UTILITY MODEL
The utility model discloses aim at solving one of the technical problem that exists among the prior art at least. Therefore, the utility model provides a photoelectric detector not only can make photoelectric detector provide operating current simultaneously, has promoted the integrated level simultaneously, and the device is frivolous.
The photoelectric detector according to the embodiment of the utility model comprises a substrate, a photoelectric sensing structure array, a photovoltaic cell structure array and an encapsulation layer; the photoelectric sensing structure array is arranged on the substrate; the photovoltaic cell structure array is arranged on the substrate; the packaging layer is connected with the substrate and wraps the photoelectric sensing structure array and the photovoltaic cell structure array, wherein the photovoltaic cell structure array is positioned on one side of the photoelectric sensing structure array; or, the photovoltaic cell structure array surrounds the periphery of the photoelectric sensing structure array.
According to some embodiments of the present invention, the photoelectric sensing structural array comprises a plurality of photoelectric sensing structural units, each of the photoelectric sensing structural units comprises a first connection point, a pixel readout circuit, a first electrode array, a first carrier transport layer, a first photosensitive layer, a second carrier transport layer, and a first common electrode layer; the first connecting point is arranged in the substrate; the pixel reading circuit is arranged in the substrate; the first electrode arrays are arranged on the first surface of the substrate, and each first electrode array is respectively connected with the corresponding first connecting point or the pixel readout circuit; the first carrier transmission layer is laid on the first electrode array; the first photosensitive layer is laid on the first carrier transmission layer; the second carrier transmission layer is laid on the first photosensitive layer; the first common electrode layer is laid on the second carrier transmission layer.
According to some embodiments of the invention, the first and second carrier transport layers have a carrier mobility greater than a carrier mobility on the first photoactive layer; or the energy gaps of the first carrier transmission layer and the second carrier transmission layer are larger than the energy gap of the first photosensitive layer.
According to some embodiments of the invention, the pixel readout circuit is comprised of a thin film transistor.
According to some embodiments of the invention, the first common electrode layer is silver, the first carrier transport layer is zinc oxide, the second carrier transport layer is molybdenum oxide.
According to some embodiments of the present invention, the photovoltaic cell structure array comprises a second connection contact, a third connection contact and a plurality of photovoltaic cell structure units connected in sequence, the second connection contact being disposed within the substrate; the third connecting contact is arranged in the substrate; each photovoltaic cell constitutional unit lays in the first surface of base plate, first photovoltaic cell constitutional unit with the second connection contact is connected, the last photovoltaic cell constitutional unit with the third connection contact is connected, wherein, first photovoltaic cell constitutional unit the second electrode array with the second connection contact is connected, the former photovoltaic cell constitutional unit the second electrode array with the latter photovoltaic cell constitutional unit the second common electrode layer is connected, the last photovoltaic cell constitutional unit the second electrode array with the third connection contact is connected.
According to some embodiments of the present invention, the photovoltaic cell structural unit comprises a second electrode array, a third carrier transport layer, a second photosensitive layer, a fourth carrier transport layer and a second common electrode layer: the second electrode array is arranged on the first surface of the substrate; the third carrier transmission layer is laid on the second electrode array; the second photosensitive layer is laid on the third carrier transport layer; the fourth carrier transmission layer is laid on the second photosensitive layer; the second common electrode layer is laid on the fourth carrier transmission layer.
According to some embodiments of the invention, the third and fourth carrier transport layers have a carrier mobility greater than a carrier mobility on the corresponding second photoactive layer; or the energy gaps of the third carrier transmission layer and the fourth carrier transmission layer are larger than the energy gap of the corresponding second photosensitive layer.
According to some embodiments of the invention, the second common electrode layer is silver, the third carrier transport layer is zinc oxide, the fourth carrier transport layer is molybdenum oxide.
According to some embodiments of the invention, the encapsulation layer is epoxy.
According to some embodiments of the invention, the substrate is glass.
The embodiment of the utility model provides a following beneficial effect has at least: the photoelectric sensing structure array and the photovoltaic cell structure array are synchronously arranged in the same substrate and the same packaging layer, so that the integration level is effectively improved, the whole space is reduced, the whole device becomes light and thin, the assembly efficiency is improved, and the photovoltaic cell structure array can also generate electric potential energy to provide working current for the photoelectric detector, so that the photoelectric detector has the detection function of the photoelectric sensing structure and the effect of providing the working current.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a schematic structural diagram of a photodetector according to an embodiment of the present invention;
fig. 2 is a schematic circuit diagram of a photodetector according to an embodiment of the present invention in a specific application;
fig. 3 is a schematic top view of a series embodiment of a photovoltaic cell structure according to the present invention;
fig. 4 is a schematic top view of a series embodiment of the present invention comprising a plurality of photovoltaic cell structures;
fig. 5 is a schematic top view of another embodiment of the present invention comprising a series of photovoltaic cell structures.
Reference numerals: the photoelectric sensing structure comprises a substrate 100, a photoelectric sensing structure array 200, a first connection point 210, a pixel readout circuit 220, a first electrode array 230, a first carrier transmission layer 240, a first photosensitive layer 250, a second carrier transmission layer 260, a first common electrode layer 270, a photovoltaic cell structure array 300, a second connection contact 310, a third connection contact 320, a second electrode array 330, a third carrier transmission layer 340, a second photosensitive layer 350, a fourth carrier transmission layer 360, a second common electrode layer 370 and an encapsulation layer 400.
Detailed Description
The conception, specific structure and technical effects of the present invention will be described clearly and completely with reference to the accompanying drawings and embodiments, so as to fully understand the objects, aspects and effects of the present invention. It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict.
It should be noted that, unless otherwise specified, when a feature is referred to as being "fixed" or "connected" to another feature, it may be directly fixed or connected to the other feature or indirectly fixed or connected to the other feature. Furthermore, the description of the upper, lower, left, right, top, bottom, etc. used in the present invention is only relative to the mutual position relationship of the components of the present invention in the drawings.
Furthermore, unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art. The terminology used in the description herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any combination of one or more of the associated listed items.
It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element of the same type from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present disclosure.
Referring to fig. 1, a photodetector according to an embodiment of the present invention includes a substrate 100, a photo sensor structure array 200, a photovoltaic cell structure array 300, and an encapsulation layer 400; the photoelectric sensing structure array 200 is arranged on the substrate 100; the photovoltaic cell structure array 300 is arranged on the substrate 100; the packaging layer 400 is connected with the substrate 100 and wraps the photoelectric sensing structure array 200 and the photovoltaic cell structure array 300; wherein, the photovoltaic cell structure array 300 is located at one side of the photoelectric sensing structure array 200; alternatively, the photovoltaic cell structure array 300 surrounds the periphery of the photo-sensing structure array 200.
In some embodiments of the present invention, the photo-sensing structure array 200 includes a plurality of photo-sensing structure units, each of which includes a first connection point 210, a pixel readout circuit 220, a first electrode array 230, a first carrier transport layer 240, a first photosensitive layer 250, a second carrier transport layer 260, and a first common electrode layer 270; the first connection point 210 is disposed in the substrate 100; the pixel readout circuit 220 is disposed in the substrate 100; the first electrode arrays 230 are disposed on the first surface of the substrate 100, and each first electrode array 230 is connected to a corresponding first connection point 210 or pixel readout circuit 220; the first carrier transport layer 240 is laid on the second electrode array 330; a first photoactive layer 250 is disposed on the first carrier transport layer 240; a second carrier transport layer 260 is laid on the first photosensitive layer 250; the first common electrode layer 270 is laid on the second carrier transport layer 260. The first carrier transmission layer 240, the first photosensitive layer 250, the second carrier transmission layer 260 and the first common electrode layer 270 of each photoelectric sensing structural unit form an electrically series-connected structure through a stacked structure, are electrically connected with the first connection point 210 through the first electrode array 230, are electrically connected with the pixel reading circuit 220 through the second electrode array 330, and can complete the detection function of the photoelectric sensing structural array 200 through the detection of a plurality of photoelectric sensing structural units so as to output corresponding electric signals.
In some embodiments of the present invention, the carrier mobility of the first carrier transport layer 240 and the second carrier transport layer 260 is greater than the carrier mobility on the first photoactive layer 250; the carrier mobility refers to a physical quantity used for describing how fast or slow an electron or a hole inside the organic semiconductor material moves under the action of an electric field, and specifically, the carrier mobility of the first carrier transport layer 240 and the second carrier transport layer 260 is greater than the carrier mobility of the corresponding acceptor material and donor material on the corresponding first photosensitive layer 250. Wherein "donor material" refers to a P-type organic semiconductor material on the first photosensitive layer 250 and "acceptor material" refers to an N-type organic semiconductor material on the first photosensitive layer 250.
The energy gap of the first carrier transport layer 240 and the second carrier transport layer 260 is greater than the energy gap of the first photosensitive layer 250; the energy gap refers to an optical energy gap of a semiconductor material, which is a value obtained by dividing 1240 by a cutoff wavelength of an absorption edge of the semiconductor material (in electron volts), and specifically, the energy gaps of the first carrier transport layer 240 and the second carrier transport layer 260 are greater than the energy gaps of the corresponding acceptor material and donor material on the corresponding first photosensitive layer 250.
In some embodiments of the present invention, the pixel readout circuit 220 is composed of a thin film transistor.
In some embodiments of the present invention, the first common electrode layer 270 is silver, the first carrier transport layer 240 is zinc oxide, and the second carrier transport layer 260 is molybdenum oxide. The first common electrode layer 270 may be formed by one or more methods independently selected from vacuum thermal evaporation, electron beam evaporation, molecular beam evaporation or plasma sputtering, atomic layer deposition or liquid film formation followed by reduction conversion, electroplating or electrodeposition, and the first and second carrier transport layers 240 and 260 may be formed by one or more methods selected from solution film formation, sol-gel film formation, vacuum thermal evaporation, atomic layer deposition, chemical vapor deposition, electrodeposition and anodic oxidation.
In some embodiments of the present invention, the first photosensitive layer 250 may be formed by a solution film forming method.
In some embodiments of the present invention, the photovoltaic cell structure array 300 includes a second connection contact 310, a third connection contact 320 and a plurality of photovoltaic cell structure units connected in sequence, the second connection contact 310 is disposed in the substrate 100; the third connection contact 320 is provided in the substrate 100; each photovoltaic cell structure unit is laid on the first surface of the substrate 100, the first photovoltaic cell structure unit is connected with the second connection contact 310, and the last photovoltaic cell structure unit is connected with the third connection contact 320.
The photovoltaic cell structural unit comprises a second electrode array 330, a third carrier transport layer 340, a second photosensitive layer 350, a fourth carrier transport layer 360 and a second common electrode layer 370: the second electrode array 330 is disposed on the first surface of the substrate 100; the third carrier transport layer 340 is laid on the second electrode array 330; the second photosensitive layer 350 is laid on the third carrier transport layer 340; a fourth carrier transport layer 360 is laid on the second photosensitive layer 350; the second common electrode layer 370 is laid on the fourth carrier transport layer 360, wherein the second electrode array 330 of the first photovoltaic cell structural unit is connected to the second connection contact 310, the second electrode array 330 of the previous photovoltaic cell structural unit is connected to the second common electrode layer 370 of the next photovoltaic cell structural unit, and the second electrode array 330 of the last photovoltaic cell structural unit is connected to the third connection contact 320.
In cooperation with the above connections, each photovoltaic cell structure unit can form an independent photovoltaic cell structure through the corresponding second electrode array 330, third carrier transport layer 340, second photosensitive layer 350, fourth carrier transport layer 360 and second common electrode layer 370, and meanwhile, the second electrode array 330 of the previous photovoltaic cell structure unit is connected with the second common electrode layer 370 of the next photovoltaic cell structure unit, so that a plurality of photovoltaic cell structures in a serial state can be formed, that is, a plurality of photovoltaic cell structure units of the photovoltaic cell structure array 300 are connected in series to form a whole, and simultaneously, the photovoltaic cell structure array 300 can output voltage to the outside through the second connection contact 310 and the third connection contact 320 to provide working current, the photovoltaic cell structure array 300 supplies power to an external light source, the light source is used for fingerprint collection, and can also provide working current for a readout circuit or an external signal processing circuit; specifically, reference may be made to the schematic circuit diagram shown in fig. 2, and fig. 2 is the schematic circuit diagram corresponding to the present invention in a specific application, and the photovoltaic cell structure array 300 may supply power to an external circuit.
In addition, referring to fig. 3, in the case that the photovoltaic cell structure array 300 has only one photovoltaic cell structure unit, the photovoltaic cell structure unit is directly connected to the second connection contact 310 and the third connection contact 320 at the same time, so as to realize direct power supply of a single photovoltaic cell structure unit; referring to fig. 4, in the case that the photovoltaic cell structural array 300 is composed of a plurality of photovoltaic cell structural units, wherein the photovoltaic sensing structural array 200 is located in the middle, the second electrode array 330 of the first photovoltaic cell structural unit of the photovoltaic cell structural array 300 is connected to the second connection contact 310, the second electrode array 330 of the previous photovoltaic cell structural unit is connected to the second common electrode layer 370 of the next photovoltaic cell structural unit, and the second electrode array 330 of the last photovoltaic cell structural unit is connected to the third connection contact 320, so that the plurality of photovoltaic cell structural units are directly powered out after being connected in series; referring to fig. 5, in the case that the photovoltaic cell structure array 300 is formed by sequentially connecting a plurality of photovoltaic cell structure units, wherein the photovoltaic sensor structure array 200 is located at one side, the second electrode array 330 and the second connection contact 310 of a first photovoltaic cell structure unit of the photovoltaic cell structure array 300, the second electrode array 330 of a previous photovoltaic cell structure unit is connected to the second common electrode layer 370 of a next photovoltaic cell structure unit, and the second electrode array 330 of a last photovoltaic cell structure unit is connected to the third connection contact 320, so that the plurality of photovoltaic cell structure units are directly powered out after being connected in series.
In some embodiments of the present invention, the carrier mobility of the third carrier transport layer 340 and the fourth carrier transport layer 360 is greater than the carrier mobility on the corresponding second photoactive layer 350; the carrier mobility refers to a physical quantity used for describing how fast or slow an electron or a hole inside the organic semiconductor material moves under the action of an electric field, and specifically, the carrier mobility of the third carrier transport layer 340 and the fourth carrier transport layer 360 is greater than the carrier mobility of the corresponding acceptor material and donor material on the second photosensitive layer 350. Wherein "donor material" refers to a P-type organic semiconductor material on the second photoactive layer 350 and "acceptor material" refers to an N-type organic semiconductor material on the second photoactive layer 350.
The energy gap of the third carrier transport layer 340 and the fourth carrier transport layer 360 is larger than the energy gap of the corresponding second photosensitive layer 350; the energy gap refers to an optical energy gap of a semiconductor material, which is a value obtained by dividing 1240 by a cutoff wavelength of an absorption edge of the semiconductor material (in electron volts), and specifically, energy gaps of the third carrier transport layer 340 and the fourth carrier transport layer 360 are greater than energy gaps of corresponding acceptor materials and donor materials on the second photosensitive layer 350.
In some embodiments of the present invention, the second common electrode layer 370 is silver, the third carrier transport layer 340 is zinc oxide, and the fourth carrier transport layer 360 is molybdenum oxide. The second common electrode layer 370 may be formed by one or more methods independently selected from vacuum thermal evaporation, electron beam evaporation, molecular beam evaporation or plasma sputtering, atomic layer deposition or liquid film formation followed by reduction conversion, electroplating or electrodeposition, and the third and fourth carrier transport layers 340 and 360 may be formed by one or more methods selected from solution film formation, sol-gel film formation, vacuum thermal evaporation, atomic layer deposition, chemical vapor deposition, electrodeposition and anodic oxidation.
In some embodiments of the present invention, the second photosensitive layer 350 can be formed by solution film formation.
In some embodiments of the present invention, before the second common electrode layer 370 is prepared, each photovoltaic cell structure unit is separated out by laser etching, and the etching is performed onto the second electrode array 330.
In some embodiments of the present invention, the encapsulation layer 400 is an epoxy resin. With epoxy, protection may be provided to the photo-sensing structure array 200 and the photovoltaic cell structure array 300 to prevent device damage. In this embodiment, the encapsulation layer 400 is cured under ultraviolet light. In this embodiment, the encapsulation layer 400 may be formed by any one of vacuum thermal evaporation, chemical vapor deposition, atomic layer deposition, plasma sputtering, and liquid film formation.
In some embodiments of the present invention, the substrate 100 is glass. The substrate 100 is made of glass, so that external light sources can be conveniently detected and collected, and stable support and protection can be provided for internal devices.
In some embodiments, the first common electrode layer 270 and the second common electrode layer 370 are processed in a patterned manner, and the first photosensitive layer 250 and the second photosensitive layer 350 are not processed in a patterned manner. Patterning refers to a process flow in which a thin film layer of a certain material is patterned into a certain shape by means of a mask or photolithography.
In some embodiments of the present invention, the first carrier transport layer 240 and the third carrier transport layer 340 can respectively function as buffer layers, that is, the first carrier transport layer 240 is disposed between the first photosensitive layer 250 and the first electrode array 230, and the third carrier transport layer 340 is disposed between the second photosensitive layer 350 and the first electrode array 230 or between the second photosensitive layer 350 and the second electrode array 330, which can prevent lattice mismatch, heterodiffusion and polarity problems generated when semiconductors are prepared on the substrates 100 of different substances.
In some embodiments of the present invention, the first carrier transport layer 240, the second carrier transport layer 260, the third carrier transport layer 340, and the fourth carrier transport layer 360 are one of N-type or P-type material layers responsible for transporting electrons or holes, wherein it should be noted that when the first carrier transport layer 240 adopts an N-type material layer, the second carrier transport layer 260 is a P-type material layer, and when the first carrier transport layer 240 adopts a P-type material layer, the second carrier transport layer 260 is an N-type material layer; similarly, the third carrier transport layer 340 and the fourth carrier transport layer need to be one of N-type or P-type material layers at the same time, respectively, to form opposite carrier transport layers, i.e., the N-type and P-type material layers are needed to cooperate with the corresponding photosensitive layers to realize the electron transport.
In some embodiments of the present invention, the effective fermi levels of the first and second carrier transport layers 240 and 260 correspond to the levels of the corresponding charges of the first photoactive layer 250; for a transport layer in which electrons are the predominant carrier, the difference between the effective fermi level of the electrons and the conduction band bottom of the first photoactive layer 250 (organic electronics is called the lowest unoccupied molecular orbital, which means the lowest energy molecular orbital, also called LUMO, of the unoccupied molecular orbitals of electrons of the organic semiconductor material) is greater than-0.15 eV; for a hole-dominant carrier transport layer, the difference between the effective fermi level of the hole and the valence band top of the first photoactive layer 250 (organic electronics is referred to as the highest occupied molecular orbital, which means the highest energy molecular orbital, also referred to as HOMO, of the molecular orbitals occupied by the electrons of the organic semiconductor material) is less than +0.15eV. To satisfy the effective transmission of the corresponding charges at room temperature.
Similarly, the effective fermi levels of the third and fourth carrier transport layers 340 and 360 correspond to the levels of the corresponding charges of the second photoactive layer 350; for the transport layer in which electrons are the main carriers, the energy level difference between the effective fermi level of the electrons and the conduction band bottom of the second photosensitive layer 350 (organic electronics is called the lowest unoccupied molecular orbital, which means the lowest energy molecular orbital, also called LUMO, among the unoccupied molecular orbitals of the electrons of the organic semiconductor material) is greater than-0.15 eV; in the case of a hole-dominant carrier transport layer, the difference between the effective fermi level of the hole and the valence band top (the organic electron is called the highest occupied molecular orbital, which means the highest energy molecular orbital, also called HOMO, of the molecular orbitals occupied by the electrons of the organic semiconductor material) of the second photoactive layer is less than +0.15eV. To satisfy the effective transmission of the corresponding charges at room temperature.
It is to be noted that, in the present embodiment, a portion of the photo-sensing structure array 200 and the photovoltaic cell structure array 300 shown in the figure is shared, that is, the first carrier transport layer 240 and the third carrier transport layer 340, the first photo-sensing layer 250 and the second photo-sensing layer 350, and the second carrier transport layer 260 and the fourth carrier transport layer 360 are respectively connected together in the horizontal plane, but due to the extremely thin thickness of the corresponding structure in the up-down direction in the figure, heterogeneous carriers can be transported and are considered to be conductive, that is, the first carrier transport layer 240, the first photo-sensing layer 250 and the second carrier transport layer 260 in the up-down direction are in electrical conduction, the third carrier transport layer 340, the second photo-sensing layer 350 and the fourth carrier transport layer 360 in the up-down direction are in electrical conduction, and due to the extremely low mobility in the same material in the left-right direction in the figure, the first carrier transport layer 240 and the third carrier transport layer 340 are not in electrical conduction, the first photo-sensing layer 250 and the second photo-sensing layer 350, and the fourth carrier transport layer 260 are not in electrical conduction; therefore, although a part of the photoelectric sensing structure array 200 and the photovoltaic cell structure array 300 are connected in the structure, the photoelectric sensing structure array 200 and the photovoltaic cell structure array 300 are independently connected in series in the circuit sense.
In this embodiment, in combination with the above structural description, the photodetector of the present invention can be prepared by the following steps:
1) Arranging a first connecting contact point 210, a pixel reading circuit 220, a first electrode array 230, a second electrode array 330, a second connecting contact point 310 and a third connecting contact point 320 on the substrate 100 correspondingly, placing the substrate 100 on a film developing frame, and ultrasonically cleaning for 1 minute by using an ultrasonic device, wherein the detergent is isopropanol;
2) A layer of 40nm ZnO nanoparticles was printed on the corresponding first and second electrode arrays 230 and 330 using an inkjet printer to form the corresponding first and third carrier transport layers 240 and 340, and annealed at 100 degrees celsius for 10 minutes.
3) A 200nm layer of P3HT was printed on top of the first and third carrier transport layers 240 and 340: PC61BM =1:1.5wt of thin film was used as the corresponding first photosensitive layer 250 and second photosensitive layer 350 (dichlorobenzene was used as a solvent), and annealed at 120 degrees celsius for 30 minutes.
4) Molybdenum oxide of 10nm is deposited on the first photosensitive layer 250 and the second photosensitive layer 350 through a patterned mask plate to form a corresponding second carrier transmission layer 260 and a fourth carrier transmission layer 360, and the photovoltaic cell structure array 300 area is divided into a plurality of photovoltaic cell structure units through laser etching and etched to the second electrode array 330.
5) Silver is deposited on the second and fourth carrier transport layers 260 and 360 to form 100nm to form the corresponding first and second common electrode layers 270 and 370.
6) After the device is prepared, epoxy resin is used for curing and packaging in ultraviolet light to form a packaging layer 400 which wraps the photoelectric sensing structure array 200 and the photovoltaic cell structure array 300.
According to the utility model discloses an embodiment, through so setting up, some effects as follows at least can be reached, locate same base plate 100 and packaging layer 400 with photoelectric sensing structure array 200 and photovoltaic cell structure array 300 in step, the integration degree has been promoted effectively, holistic space has been reduced, make holistic device become frivolous, and the efficiency of assembly has been promoted, it is integrated on same base plate 100 with photoelectric sensing structure array 200 and photovoltaic cell structure array 300, when making the device can realize the photodetection function, still can carry out photoelectric conversion to device work energy supply. The photovoltaic cell structure array 300 generates an electromotive force through a photoelectric conversion process by absorbing light, promotes generation and transmission of carriers, realizes conversion from light energy to electric energy, and the generated electric energy can be stored in an external battery through an external circuit, so as to provide electric energy for the external circuit, an external light source and the like.
The above is only a preferred embodiment of the present invention, and the present invention is not limited to the above embodiments, as long as the technical effects of the present invention are achieved by the same means, and any modifications, equivalent replacements, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the protection of the present disclosure. All belong to the protection scope of the utility model. The technical solution and/or the embodiments of the invention may be subject to various modifications and variations within the scope of the invention.
Claims (10)
1. A photodetector, comprising:
a substrate (100);
the photoelectric sensing structure array (200) is arranged on the substrate (100);
a photovoltaic cell structure array (300) disposed on the substrate (100);
an encapsulation layer (400) connected to the substrate (100) and enclosing the array of photo-sensing structures (200) and the array of photovoltaic cell structures (300);
wherein the photovoltaic cell structure array (300) is located at one side of the photoelectric sensing structure array (200);
or, the photovoltaic cell structure array (300) surrounds the periphery of the photoelectric sensing structure array (200).
2. A photodetector according to claim 1, characterized in that said array of photo-sensing structures (200) comprises a number of photo-sensing structure units, each of said photo-sensing structure units comprising:
a first connection point (210) provided in the substrate (100);
a pixel readout circuit (220) disposed within the substrate (100);
two first electrode arrays (230) arranged on the first surface of the substrate (100), wherein each first electrode array (230) is connected with the corresponding first connection point (210) or the pixel readout circuit (220);
a first carrier transport layer (240) disposed on the first electrode array (230);
a first photoactive layer (250) disposed on the first carrier transport layer (240);
a second carrier transport layer (260) disposed on the first photoactive layer (250);
and the first common electrode layer (270) is laid on the second carrier transmission layer (260).
3. The photodetector of claim 2, characterized in that the carrier mobility of said first carrier transport layer (240) and said second carrier transport layer (260) is greater than the carrier mobility on said first photosensitive layer (250);
or the like, or, alternatively,
the energy gap of the first carrier transport layer (240) and the second carrier transport layer (260) is larger than the energy gap of the first photosensitive layer (250).
4. The photodetector of claim 2, wherein: the pixel readout circuit (220) is composed of a thin film transistor.
5. The photodetector of claim 2, wherein: the first common electrode layer (270) is silver, the first carrier transport layer (240) is zinc oxide, and the second carrier transport layer (260) is molybdenum oxide.
6. The photodetector of claim 1, wherein: the array of photovoltaic cell structures (300) comprises:
a second connection contact (310) provided in the substrate (100);
a third connection contact (320) provided in the substrate (100);
the photovoltaic cell structure units are sequentially connected, each photovoltaic cell structure unit is laid on the first surface of the substrate (100), the first photovoltaic cell structure unit is connected with the second connecting contact (310), and the last photovoltaic cell structure unit is connected with the third connecting contact (320).
7. The photodetector of claim 6, wherein the photovoltaic cell structure unit comprises:
a second electrode array (330) disposed on the first surface of the substrate (100);
a third carrier transport layer (340), the third carrier transport layer (340) being disposed on the second electrode array (330);
a second photoactive layer (350), the second photoactive layer (350) overlying the third carrier transport layer (340);
a fourth carrier transport layer (360), the fourth carrier transport layer (360) disposed on the second photoactive layer (350);
a second common electrode layer (370), the second common electrode layer (370) being laid on the fourth carrier transport layer (360);
wherein the second electrode array (330) of a first one of the photovoltaic cell modules is connected to the second connection contact (310), the second electrode array (330) of a preceding one of the photovoltaic cell modules is connected to the second common electrode layer (370) of a succeeding one of the photovoltaic cell modules, and the second electrode array (330) of a last one of the photovoltaic cell modules is connected to the third connection contact (320).
8. The photodetector of claim 7, wherein the carrier mobility of the third carrier transport layer (340) and the fourth carrier transport layer (360) is greater than the carrier mobility on the corresponding second photosensitive layer (350);
or the like, or, alternatively,
the energy gaps of the third carrier transport layer (340) and the fourth carrier transport layer (360) are larger than the energy gap of the corresponding second photosensitive layer (350).
9. The photodetector of claim 7, wherein: the second common electrode layer (370) is silver, the third carrier transport layer (340) is zinc oxide, and the fourth carrier transport layer (360) is molybdenum oxide.
10. The photodetector of any one of claims 1 to 9, wherein: the packaging layer (400) is made of epoxy resin, and the substrate (100) is made of glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221076167.2U CN217562570U (en) | 2022-05-07 | 2022-05-07 | Photoelectric detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221076167.2U CN217562570U (en) | 2022-05-07 | 2022-05-07 | Photoelectric detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN217562570U true CN217562570U (en) | 2022-10-11 |
Family
ID=83475004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202221076167.2U Active CN217562570U (en) | 2022-05-07 | 2022-05-07 | Photoelectric detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN217562570U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115124548A (en) * | 2022-04-15 | 2022-09-30 | 广州光达创新科技有限公司 | N-type organic semiconductor capable of being electrically crosslinked, preparation method and application thereof in electrochemical polymerization |
-
2022
- 2022-05-07 CN CN202221076167.2U patent/CN217562570U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115124548A (en) * | 2022-04-15 | 2022-09-30 | 广州光达创新科技有限公司 | N-type organic semiconductor capable of being electrically crosslinked, preparation method and application thereof in electrochemical polymerization |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108598111B (en) | Display substrate with fingerprint identification function, method and display device | |
| KR101301664B1 (en) | The method for manufacturing Thin film type Solar Cell, and Thin film type Solar Cell made by the method | |
| KR101463925B1 (en) | Thin film type Solar Cell, and Method for manufacturing the same | |
| CN107534050B (en) | Image sensor, laminated image pickup device, and image pickup module | |
| CN110366780B (en) | Photodetector array | |
| US20140124782A1 (en) | Image sensor | |
| US9985077B2 (en) | Serial module of organic solar cell and method for manufacturing the same | |
| US20190074461A1 (en) | Structure of photovoltaic cell | |
| CN105720197A (en) | Self-driven wide-spectral-response silicon-based hybrid heterojunction photoelectric sensor and preparation method therefor | |
| CN217562570U (en) | Photoelectric detector | |
| Li et al. | Fully printable organic and perovskite solar cells with transfer-printed flexible electrodes | |
| US20220376194A1 (en) | Cell assembly and method for preparing cell assembly | |
| CN113990971B (en) | Photoelectric detector based on quantum dot superlattice and two-dimensional material compounding | |
| KR101457573B1 (en) | Thin film type Solar Cell, and Method for manufacturing the same | |
| JP2014183073A (en) | Photoelectric conversion element and method of manufacturing photoelectric conversion element | |
| CN110310972B (en) | Photoelectric detector and preparation method | |
| CN114023835B (en) | Quantum dot superlattice photoelectric detector | |
| KR101445041B1 (en) | Solar cell with 3-dimensional structure of light absorber layer and manufacturing method therof | |
| KR101821400B1 (en) | Active element based on 2d material | |
| KR20130006871A (en) | Photoelectric device and method of manufacturing the same | |
| US20120132266A1 (en) | Photoelectric conversion device using semiconductor nanomaterial | |
| KR20110039777A (en) | Solar cell and method of fabricating the same | |
| US12101949B2 (en) | Photoelectric conversion element, electronic device, and light-emitting device | |
| KR102493477B1 (en) | photocapacitor fibers, modules and manufacturing methods thereof | |
| US20220216440A1 (en) | Photoelectric conversion element, electronic device, and light-emitting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |