CN217506910U - Transparent conductive shielding structure - Google Patents
Transparent conductive shielding structure Download PDFInfo
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- CN217506910U CN217506910U CN202123316903.5U CN202123316903U CN217506910U CN 217506910 U CN217506910 U CN 217506910U CN 202123316903 U CN202123316903 U CN 202123316903U CN 217506910 U CN217506910 U CN 217506910U
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Abstract
The utility model discloses a transparent electrically conductive shielding structure, include: the surface of the transparent substrate is provided with a plurality of fine grooves, and the fine grooves are mutually connected to form a hollow network structure; a conductive network body embedded in the hollow network structure. Adopt the utility model discloses, can have good transparency, shielding effect and heat resistance concurrently.
Description
Technical Field
The utility model relates to a shielding structure technical field, in particular to transparent electrically conductive shielding structure.
Background
In the past decades, the light-transmissive conductive material can be classified into a continuous type and an aperture type in a basic operation principle. The former is mainly a self-transparent thin film material, such as Indium Tin Oxide (ITO), ultrathin metal, graphene, transparent conductive polymer and the like; in the latter, the opaque material is used to form fine pores to realize the light transmission effect, such as metal pore plate, metal wire mesh, metal nanowire, carbon nanotube, metal mesh grid, etc. Among them, the continuous transparent conductive film requires the material itself to have both ideal conductivity and transparency. When the index is severe, the range of available materials will shrink to an extremely rare few materials and have severe requirements for the film forming process. Accordingly, the cost of manufacturing increases dramatically.
For the aperture type light-transmitting conductive film, since an opaque material can be used, the choice of the material is relatively wide. On the other hand, the adjustment of the parameters such as the size and the shape of the gap distribution can affect the overall performance of the product, so that more key influencing factors can be regulated and controlled, the selection of the optimized material and the processing technology according to the overall performance index is facilitated, and the cost performance of the product is improved. In addition, the transparent conductive structure can adopt nano or micron-sized particles, sheets, wires and other materials, so that the material loss and the pollutant emission in the manufacturing link can be reduced through an additive manufacturing technology, and the manufacturing cost of the product can be further reduced. In contrast, conventional aperture-type transparent conductive films, such as metal aperture plates or metal wire mesh structures, have limited transparency and poor visual observation effects due to the need to ensure a certain strength of the metal material during the processing, and the average width of the opaque portion of the film is usually over 50 μm.
With the expansion of the application range, the requirement of the high-temperature resistant transparent conductive film is met;
the potential application fields of the high-temperature resistant transparent conductive film mainly focus on the following harsh scenes:
1. the high-temperature shielding and shielding integrated circuit can be used under high-temperature conditions, such as vehicle-mounted, aerospace and shielding, invisible antennas and transparent hidden circuits under complex working conditions.
2. The application requirements of larger electric power, such as shielding of high-power radiation, invisible antenna of larger current, transparent hidden circuit, etc.
3. The microwave oven door can bear high temperature of at least 150-600 ℃ and has higher shielding effect.
The shielding effect and the high temperature resistant demand of preferred can't be satisfied simultaneously to current transparent shielding layer, and when transparent shielding layer contained not high temperature resistant component, the shielding layer cracked very easily, discoloured, smoked or even the fire, seriously influences safety.
This is because the vast majority of the high quality new aperture-type transparent conductive products of the prior art rely on polymer auxiliary materials. For example, various nano-or micron-sized particles, flakes, wires, and like conductive materials require polymeric components to provide adhesion, scratch resistance, and encapsulation protection. For fine metal mesh structures obtained by nanoimprint technology, the imprint glue used also remains in the product at all times. However, most of the polymer materials are seriously deteriorated at high temperature, and even the extreme conditions of smoking, fire and the like can be caused.
Research shows that when the hollow network structure is fused at a certain point, chain reaction can occur rapidly, so that the whole transparent conductive network is broken down, and further accidents occur.
In summary, the conductive powder in the conventional product will be damaged/fall off at high temperature (e.g. 150-. And some thermolabile auxiliary materials (e.g., some resin materials) may even be at risk of fire. On the other hand, the damage of the conductive portion may further cause the product to heat, thereby forming a vicious circle.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem that a transparent conductive shielding structure is provided, good transparency and shielding effect can have concurrently.
In order to achieve the above technical effects, the utility model provides a transparent conductive shielding structure, include:
the surface of the transparent substrate is provided with a plurality of fine grooves, and the fine grooves are mutually connected to form a hollow network structure;
a conductive network body embedded in the hollow network structure.
As an improvement of the scheme, the protective layer is further included and is coated on the surface of the transparent substrate provided with the conductive network body. The protective layer is a silicon oxide layer or a silicon nitride layer.
As an improvement of the scheme, the width of the fine groove is 1-100 microns, and the depth is 0.5-20 microns;
the maximum distance between adjacent slots ranges between 100 and 1000 microns.
As an improvement of the scheme, the width of the fine groove is 10-50 microns, and the depth is 5-15 microns; the ratio of the depth to the width of the fine groove is 0.05-1; the maximum distance between adjacent slots ranges between 260 and 460 microns.
As a modification of the above, the maximum distance between adjacent slots ranges between 310-410 μm.
As an improvement of the scheme, the grid shape of the hollow network structure is square, hexagonal, octagonal, triangular, rhombic or trapezoidal.
As an improvement of the scheme, the grid shape of the hollow network structure is a square, a rectangle or a regular hexagon.
As a modification of the above, the protective layer is a transparent protective layer.
As a modification of the above, the protective layer is made of polysiloxane or polysilazane.
As an improvement of the scheme, the transparent substrate is glass.
As an improvement of the above scheme, the conductive network body is formed by sintering conductive ink.
Implement the utility model discloses following beneficial effect has:
the utility model discloses transparent electrically conductive shielding structure, including transparent base member, electrically conductive network body. A plurality of grooves are formed in the transparent substrate, and the conductive network body formed by the conductive ink is embedded into the grooves of the transparent substrate, so that the contact area between the conductive particles in the conductive ink and the transparent substrate is increased, the adhesive force is improved, and the transparent conductive shielding structure has good transparency and shielding effect.
Then, a protective layer with high light transmittance is formed on the surface of the transparent substrate provided with the conductive network. The protective layer may enhance the interaction of the conductive particles with the transparent matrix. Therefore, the utility model discloses obtain the transparent conductive film who mainly comprises glass and conductive component, can have good transparency, shielding effect and heat resistance concurrently, guarantee the product at the stability of performance under the high temperature, stop risks such as inefficacy, on fire. The utility model discloses can normally work under 150 supple food 600 ℃ of temperature, still have stably, safety, high transparency, shielding advantage such as effectual under 150 supple food 600 ℃ of high temperature.
Drawings
Fig. 1 is a schematic structural view of the transparent conductive shielding structure of the present invention;
fig. 2 is a cross-sectional view of the hollow network structure of the present invention;
fig. 3 is a schematic structural diagram of the conductive network of the present invention.
Detailed Description
To make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail with reference to the accompanying drawings.
With reference to fig. 1 to 3, the present invention provides a transparent conductive shielding structure, including:
the surface of the transparent substrate 1 is provided with a plurality of fine grooves 11, and the fine grooves 11 are mutually connected to form a hollow network structure;
and the conductive network body 2 is embedded into the hollow network structure.
The transparent substrate 1 can be made of various transparent materials, and preferably, the transparent substrate is glass.
The utility model discloses form many striae 2 on transparent base member 1, in the striae through the conductive network body embedding transparent base member with conductive ink formation, increased the area of contact between conductive particle and the transparent base member in the conductive ink to improve adhesive force, make transparent conductive shielding structure has good transparency and shielding effect concurrently.
Preferably, the transparent conductive shielding structure further comprises a protective layer 3, and the protective layer 3 is coated on the surface of the transparent substrate 1 provided with the conductive network body 2. The protective layer is a silicon oxide layer or a silicon nitride layer.
The utility model forms a plurality of grooves 11 on the glass, and the grooves 11 are connected with each other to form a hollow network structure; then filling the conductive ink into the fine groove 11 through the soft scraping strip, and heating and sintering to form a conductive network body 2; finally, the protective layer 3 is formed. First, a plurality of fine grooves 11 are formed in the glass, and by embedding the conductive ink into the fine grooves 11 of the glass, the contact area between the conductive particles in the conductive ink and the glass is increased, so as to improve the adhesion. Next, a protective layer 3 having high light transmittance is formed on the glass surface provided with the conductive network 2. The protective layer 3 may strengthen the interaction of the conductive particles with the glass.
Therefore, the utility model discloses the transparent conductive film who obtains can have good transparency, shielding effect and heat resistance concurrently, guarantees the product stability under the high temperature, stops risks such as inefficacy, firing.
Preferably, the width of the fine groove 11 is 1 to 100 micrometers, and the depth is 0.5 to 20 micrometers; the maximum distance between adjacent slots 11 ranges between 100-1000 microns. More preferably, the width of the fine groove 11 is 10 to 50 microns, and the depth is 5 to 15 microns; the maximum distance between adjacent slots 11 ranges between 260-460 microns.
The width of the fine groove 11 is 1-100 micrometers, so as to take account of the contradiction between the human perception and the manufacturing cost. When the width is 1-100 micrometers, a good visual effect can be obtained, the transparency of the transparent conductive shielding structure is good, a good shielding effect is obtained, and the manufacturing cost is low. If the width of the fine groove is less than 1 μm, the manufacturing cost is high.
The depth of the slot 11 is 0.5-20 microns, which needs to be determined in cooperation with the width of the slot 11. More preferably, the ratio of the depth to the width (simply referred to as aspect ratio) of the fine groove 11 is 0.05 to 1; if the aspect ratio of the fine groove 11 is less than 0.05, the shielding effect is insufficient and the transparency is also affected; if the aspect ratio of the fine grooves 11 is larger than 1, the strength of the glass itself may be affected, and the formation of the conductive network may be easily affected, so that the upper surface of the conductive network cannot be flush with the transparent substrate.
The maximum distance between the adjacent fine grooves 11 is in the range of 100-1000 μm, which can give consideration to the contradiction between the light transmittance and the shielding effect. If the maximum distance range between the adjacent fine grooves 11 is less than 100 micrometers, the light transmission effect is poor, the transparency is low, the fogging is high, and the visual effect is poor, and if the maximum distance range between the adjacent fine grooves 11 is greater than 1000 micrometers, the shielding effect is insufficient. More preferably, the maximum distance between adjacent slots ranges between 260-460 microns. Most preferably, the maximum distance between adjacent slots ranges between 310-410 microns.
The maximum distance between adjacent fine grooves 11 is based on the distance between the center lines of the fine grooves.
The fine grooves 11 are connected with each other to form a hollow network structure, the shape of the network can be various embodiments, and preferably, the network shape of the hollow network structure is square, hexagonal, octagonal, triangular, rhombic or trapezoidal. More preferably, the grid shape of the hollow network structure is square, rectangular or regular hexagon.
The fine grooves 11 are formed in various ways, for example:
the first method of making fine grooves in the glass surface is a pulsed laser, which can be nanosecond/picosecond, which can be ultraviolet/infrared, and the fine grooves are obtained directly by the principle of local melting of the glass.
A second method of forming the fine grooves in the glass surface is HF acid etching, in which most of the area is covered with resist, only the exposed area is etched, and the fine grooves are formed by HF acid etching.
Further, the conductive network 2 is formed by sintering conductive ink. And filling the conductive ink into the fine grooves through the soft scraping strips, and heating and sintering to form a conductive network body.
The conductive ink is selected from commercial conductive ink and comprises metal and/or carbon material, wherein the metal is one or more of silver, copper and gold; the carbon material is one or more of carbon powder, graphene and carbon nano tubes.
The protective layer 3 is a silicon oxide layer or a silicon nitride layer, and is a transparent protective layer, and preferably, the protective layer 3 is made of polysiloxane or polysilazane. Because the liquid polysiloxane or polysilazane material has ideal permeability, the liquid polysiloxane or polysilazane material can penetrate into the conductive network body while covering the surface, thereby further improving the firmness of the product.
The protective layer 3 can effectively prevent the conductor component (metal nanoparticles, particularly silver) from being damaged by an external force. Through the whole cover to glass and conducting wire, this protective layer 3 can also further improve the firm degree of conducting wire on the glass surface. Furthermore, since such materials can penetrate into gaps in the conductive particles, there is an unexpected effect of further improving the firmness.
Preferably, a protective liquid is applied to the surface of the glass provided with the conductive network to form the protective layer 3. The method specifically comprises the following steps: coating protective liquid on the surface of the glass provided with the conductive network body; baking the glass coated with the protective liquid to remove the solvent; and irradiating the baked glass with ultraviolet light to enable polysiloxane or polysilazane to generate a decomposition reaction to generate silicon dioxide, wherein the silicon dioxide covers the surface of the glass and permeates into the conductive network body to form a transparent protective layer. The wavelength of the ultraviolet light is preferably less than 300nm, more preferably 172 nm.
To sum up, the utility model discloses obtain the transparent conductive film who mainly comprises glass and conductive component, can have good transparency, shielding effect and heat resistance concurrently, guarantee the product at the stability of performance under the high temperature, stop risks such as inefficacy, on fire. The utility model discloses can normally work under 150 supple food 600 ℃ of temperature, still have stably, safety, high transparency, shielding advantage such as effectual under 150 supple food 600 ℃ of high temperature.
The foregoing is a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of improvements and decorations can be made without departing from the principle of the present invention, and these improvements and decorations are also considered as the protection scope of the present invention.
Claims (10)
1. A transparent conductive shielding structure, comprising:
the surface of the transparent substrate is provided with a plurality of fine grooves, and the fine grooves are mutually connected to form a hollow network structure;
a conductive network body embedded in the hollow network structure.
2. The transparent conductive shielding structure of claim 1, further comprising a protective layer coated on the surface of the transparent substrate provided with the conductive network;
the protective layer is a silicon oxide layer or a silicon nitride layer.
3. The transparent conductive shield structure of claim 1, wherein said slots have a width of 1-100 microns and a depth of 0.5-20 microns;
the maximum distance between adjacent slots ranges between 100 and 1000 microns.
4. The transparent conductive shield structure of claim 1, wherein said fine grooves have a width of 10-50 microns, a depth of 5-15 microns, and a ratio of depth to width of said fine grooves is 0.05-1;
the maximum distance between adjacent slots ranges between 260 and 460 microns.
5. The transparent conductive shield structure of claim 1, wherein the maximum distance between adjacent slots ranges between 310-410 microns.
6. The transparent conductive shielding structure of claim 1, wherein the lattice shape of the hollow network structure is square, hexagonal, octagonal, triangular, diamond-shaped, or trapezoidal.
7. The transparent conductive shielding structure of claim 6, wherein the lattice shape of the hollow network structure is a square, a rectangle, or a regular hexagon.
8. The transparent conductive shielding structure of claim 2, wherein the protective layer is a transparent protective layer made of polysiloxane or polysilazane.
9. The transparent conductive shielding structure of any one of claims 1-8, wherein the transparent substrate is glass.
10. The transparent conductive shielding structure of any one of claims 1-8, wherein the conductive network is formed by sintering conductive ink.
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| CN202123316903.5U CN217506910U (en) | 2021-12-24 | 2021-12-24 | Transparent conductive shielding structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202123316903.5U CN217506910U (en) | 2021-12-24 | 2021-12-24 | Transparent conductive shielding structure |
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| CN217506910U true CN217506910U (en) | 2022-09-27 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114464368A (en) * | 2021-12-24 | 2022-05-10 | 广东中科半导体微纳制造技术研究院 | High-temperature-resistant transparent conductive shielding structure and preparation method thereof |
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2021
- 2021-12-24 CN CN202123316903.5U patent/CN217506910U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114464368A (en) * | 2021-12-24 | 2022-05-10 | 广东中科半导体微纳制造技术研究院 | High-temperature-resistant transparent conductive shielding structure and preparation method thereof |
| CN114464368B (en) * | 2021-12-24 | 2024-06-07 | 广东中科半导体微纳制造技术研究院 | High-temperature-resistant transparent conductive shielding structure and preparation method thereof |
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