CN217486158U - Overtemperature protection circuit for photovoltaic module shutoff device - Google Patents
Overtemperature protection circuit for photovoltaic module shutoff device Download PDFInfo
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- CN217486158U CN217486158U CN202221268110.2U CN202221268110U CN217486158U CN 217486158 U CN217486158 U CN 217486158U CN 202221268110 U CN202221268110 U CN 202221268110U CN 217486158 U CN217486158 U CN 217486158U
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Abstract
The utility model provides an overtemperature prote circuit for photovoltaic module ware that closes, including thermistor, first resistance, first electric capacity, first field effect transistor, diode and second electric capacity, wherein: the thermistor is connected with the positive electrode input end of the power supply, connected with the source electrode of the first field effect transistor, connected with the first resistor and connected with the grid electrode of the first field effect transistor; the first capacitor is connected with the thermistor, connected with the source electrode of the first field effect transistor and connected with the first field effect transistor. The thermistor and the first resistor can control the first field effect transistor to be switched off when the internal electronic device of the photovoltaic module is heated, so that the internal electronic device is effectively prevented from being heated and damaged; and the first field effect transistor can be controlled to be switched off when a heartbeat package signal is received, and the diode and the second capacitor supply power to maintain the normal work of the photovoltaic system in a short time, so that the working stability of the photovoltaic system can be further ensured.
Description
Technical Field
The utility model belongs to the technical field of photovoltaic module, very much relate to an overtemperature protection circuit for photovoltaic module closes disconnected ware.
Background
The existing photovoltaic system can be composed of a plurality of photovoltaic strings connected in series with a plurality of photovoltaic modules, and the plurality of photovoltaic modules connected in series can form high direct current voltage in the operation process, and the current is relatively large. When each photovoltaic module operates for a period of time under high voltage and large current, higher internal temperature can be generated, if the high-temperature operation is continued, great failure hidden danger can be brought to internal electronic devices of the photovoltaic module, for example, when the temperature rises to exceed a certain limit, the internal electronic devices of the photovoltaic module can be directly burned out and failed, so that the stability and the safety of the product are greatly reduced. Based on this, all can add temperature protection device on the power input line in the current product design, in case super temperature, the hardware can automatic disconnection.
On the other hand, because the controller of photovoltaic module generally can intermittent type nature send heartbeat package signal to photovoltaic module ware of cutting off, the transmitting power of heartbeat package signal is great in the twinkling of an eye also can lead to photovoltaic module's inside electron device temperature to rise in the twinkling of an eye, if under the condition of product itself operation at higher ambient temperature, easily cause inside electron device all to have the high temperature risk when sending heartbeat package signal at every turn, and then can't ensure whole photovoltaic system's normal work.
SUMMERY OF THE UTILITY MODEL
For the above-mentioned photovoltaic module's that solves better inside electron device of photovoltaic module easily causes the damage because of the temperature risees to and this inside electron device all has the high temperature risk when sending the heartbeat package at every turn, and then can't ensure the technical problem of whole photovoltaic system's normal work, the utility model provides an overtemperature prote circuit for photovoltaic module closes disconnected ware, including thermistor, first resistance, first electric capacity, first field effect transistor, diode and second electric capacity, wherein:
the first end of the thermistor is used for being connected with the positive input end of the power supply and is used for being connected with the source electrode of the first field effect transistor; the second end of the thermistor is used for being connected with the first end of the first resistor and is used for being connected with the grid electrode of the first field effect transistor;
the second end of the first resistor is used for being connected with the grounding end;
the positive electrode of the first capacitor is used for being connected with the first end of the thermistor and is used for being connected with the source electrode of the first field effect transistor; the negative electrode of the first capacitor is used for being connected with the second end of the thermistor, the first end of the first resistor and the grid of the first field effect transistor;
the source electrode of the first field effect transistor is used for being connected with the positive input end of the power supply; the drain electrode of the first field effect transistor is used for being connected with the anode output end, the cathode of the diode and the anode of the second capacitor;
the anode of the diode is used for being connected with the cathode input end of the power supply and is used for being connected with the cathode output end; the cathode of the diode is used for being connected with the anode output end;
the positive electrode of the second capacitor is used for being connected with the positive electrode output end; and the negative electrode of the second capacitor is used for being connected with the negative electrode input end of the power supply and is used for being connected with the negative electrode output end.
In one alternative, the circuit further comprises an inductance, wherein:
the first end of the inductor is used for being connected with the positive input end of the power supply;
the second end of the inductor is used for being connected with the first end of the thermistor and is used for being connected with the source electrode of the first field effect transistor.
In yet another alternative, the circuit further comprises a second field effect transistor, a transformer, a processor, and a temperature acquisition unit, wherein:
the drain electrode of the second field effect transistor is used for being connected with the second end of the inductor and is used for being connected with the input end of the transformer; the source electrode of the second field effect transistor is used for being connected with the first end of the thermistor and is used for being connected with the source electrode of the first field effect transistor; the grid electrode of the second field effect transistor is used for being connected with the processor;
the input end of the transformer is used for being connected with the negative input end of the power supply, and the output end of the transformer is used for being connected with the processor;
the processor is used for being connected with the temperature acquisition unit.
In yet another alternative, the temperature acquisition unit is a temperature sensor.
In yet another alternative, the circuit further comprises a high-to-low voltage power supply unit, wherein:
the first end of the high-voltage to low-voltage power supply unit is used for being connected with the second end of the inductor and is used for being connected with the drain electrode of the second field effect transistor;
and the second end of the high-voltage to low-voltage power supply unit is used for being connected with the processor.
In yet another alternative, the high-to-low voltage power supply unit includes a microprocessor unit, a third capacitor, a fourth capacitor, and a second resistor, wherein:
the first pin of the microprocessing unit is used for being connected with the second end of the inductor and is used for being connected with the drain electrode of the second field effect transistor;
the second pin of the micro-processing unit is used for being connected with a grounding terminal;
the third pin of the micro-processing unit is used for being connected with the first end of the second resistor;
the fourth pin of the micro-processing unit is used for being connected with the processor;
the positive pole of the third capacitor is used for being connected with the first pin of the microprocessing unit, and the negative pole of the third capacitor is used for being connected with the grounding terminal;
the positive electrode of the fourth capacitor is used for being connected with the first pin of the micro-processing unit; the negative electrode of the fourth capacitor is used for being connected with the negative electrode of the third capacitor and is used for being connected with the grounding end;
and the second end of the second resistor is used for being connected with a first pin of the microprocessing unit.
In yet another alternative, the high-to-low voltage power supply unit further includes a fifth capacitor and a sixth capacitor, wherein:
the positive electrode of the fifth capacitor is used for being connected with the fourth pin of the microprocessing unit, and the negative electrode of the fifth capacitor is used for being connected with the grounding end;
the positive electrode of the sixth capacitor is used for being connected with the fourth pin of the micro-processing unit; and the negative electrode of the sixth capacitor is used for being connected with the negative electrode of the fifth capacitor and is used for being connected with the grounding terminal.
In yet another alternative, the capacity of the third capacitor is the same as the capacity of the fifth capacitor.
In yet another alternative, the third capacitor has a capacitance of 10 microfarads.
In yet another alternative, the fourth capacitance has the same capacitance as the sixth capacitance, and the fourth capacitance is 0.1 microfarads.
The utility model has the advantages that:
the utility model provides an overtemperature prote circuit for photovoltaic module ware that closes, including thermistor, first resistance, first electric capacity, first field effect transistor, diode and second electric capacity, wherein: the first end of the thermistor is used for being connected with the positive input end of the power supply and is used for being connected with the source electrode of the first field effect transistor; the second end of the thermistor is used for being connected with the first end of the first resistor and is used for being connected with the grid electrode of the first field effect transistor; the second end of the first resistor is used for being connected with the grounding end; the positive electrode of the first capacitor is used for being connected with the first end of the thermistor and is used for being connected with the source electrode of the first field effect transistor; the negative electrode of the first capacitor is used for being connected with the second end of the thermistor, the first end of the first resistor and the grid of the first field effect transistor; the source electrode of the first field effect transistor is used for being connected with the positive input end of the power supply; the drain electrode of the first field effect transistor is used for being connected with the anode output end, the cathode of the diode and the anode of the second capacitor; the anode of the diode is used for being connected with the cathode input end of the power supply and is used for being connected with the cathode output end; the cathode of the diode is used for being connected with the anode output end; the positive electrode of the second capacitor is used for being connected with the positive electrode output end; and the negative electrode of the second capacitor is used for being connected with the negative electrode input end of the power supply and is used for being connected with the negative electrode output end. The thermistor and the first resistor can control the first field effect transistor to be switched off when the internal electronic device of the photovoltaic module is heated, so that the internal electronic device is effectively prevented from being heated and damaged; and the first field effect transistor can be controlled to be switched off when a heartbeat package signal is received, and the diode and the second capacitor supply power to maintain the normal work of the photovoltaic system in a short time, so that the working stability of the photovoltaic system can be further ensured.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an overtemperature protection circuit for a photovoltaic module shutdown device according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a power supply unit for converting high voltage into low voltage according to an embodiment of the present invention.
In the figure: 101-positive input end of power supply, 102-negative input end of power supply, 103-inductor, 104-transformer, 105-high voltage to low voltage power supply unit, 106-second field effect transistor, 107-processor, 108-temperature acquisition unit, 109-thermistor, 110-first resistor, 111-grounding end, 112-first capacitor, 113-first field effect transistor, 114-diode, 115-second capacitor, 116-anode output terminal, 117-cathode output terminal, 201-first terminal of high-voltage to low-voltage power supply unit, 202-third capacitor, 203-fourth capacitor, 204-ground terminal, 205-second resistor, 206-microprocessing unit, 207-fifth capacitor, 208-sixth capacitor and 209-second terminal of high-voltage to low-voltage power supply unit.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application.
In the following description, the terms "first" and "second" are used for descriptive purposes only and are not intended to indicate or imply relative importance. The following description provides embodiments of the present application, where different embodiments may be substituted or combined, and thus the present application is intended to include all possible combinations of the same and/or different embodiments described. Thus, if one embodiment includes feature A, B, C and another embodiment includes feature B, D, then this application should also be considered to include an embodiment that includes one or more of all other possible combinations of A, B, C, D, even though this embodiment may not be explicitly recited in text below.
The following description provides examples, and does not limit the scope, applicability, or examples set forth in the claims. Changes may be made in the function and arrangement of elements described without departing from the scope of the disclosure. Various examples may omit, substitute, or add various procedures or components as appropriate. For example, the described methods may be performed in an order different than the order described, and various steps may be added, omitted, or combined. Furthermore, features described with respect to some examples may be combined into other examples.
In the prior art, the overtemperature protection circuit comprises several common photovoltaic module turn-off devices, and possibly, a thermistor can be connected in series between a power input end and a power supply end of a photovoltaic module, so that when the temperature around the thermistor is too high, the thermistor is fused, and then the power input end and the power supply end are disconnected. It can be understood that, in general, the thermistor has a higher resistance value at a lower temperature and a lower resistance value at a higher temperature, and when the temperature is too high, the power of the thermistor is too high, which may cause fusing, and the thermistor may be recovered to normal after the temperature is reduced. However, since the reaction speed of the thermistor is slow, when the ambient temperature exceeds the limit temperature, the recovery speed of the thermistor is easily affected by the ambient temperature, and the slower the ambient temperature is reduced, the slower the recovery speed is, and further the system cannot effectively recover to normal operation. It should be noted that the thermistor can be restored to a normal low impedance state only when the temperature drops to a certain threshold.
Possibly, a temperature fuse can be connected in series between the power input end and the power supply end of the photovoltaic module, so that when the temperature of the temperature fuse is too high, the temperature fuse is fused, and the power input end and the power supply end are disconnected. It is understood that temperature fuses generally react faster and blow quickly when ambient temperatures exceed a threshold temperature. But this temperature fuse does not have recoverability, after the temperature fuse takes place the fusing, need the manual work to change to avoid the system can't resume normal work, this mode is too loaded down with trivial details, and need to drop into the cost of labor.
Possibly, a temperature fuse and a thermistor can be connected in parallel between the power input end and the power supply end of the photovoltaic module, so that when the ambient temperature is too high, the temperature fuse and the thermistor are fused, and the power input end and the power supply end are disconnected. However, the thermal fuse needs to be replaced manually after being fused, and the characteristic that the recovery speed of the thermistor is slow still cannot guarantee that the system cannot effectively recover to work normally. Secondly, the general temperature variation of photovoltaic module is comparatively frequent, and the life of thermistor is still easily influenced to the change of excessive number of times temperature.
Referring to fig. 1, fig. 1 is a schematic diagram illustrating an over-temperature protection circuit for a photovoltaic module shutdown device according to an embodiment of the present invention.
As shown in fig. 1, the over-temperature protection circuit for a photovoltaic module shutdown device includes a thermistor 109, a first resistor 110, a first capacitor 112, a first field effect transistor 113, a diode 114, and a second capacitor 115, wherein:
a first terminal of the thermistor 109 is for connection to the positive input terminal 101 of the power supply and for connection to the source of a first field effect transistor 113; a second terminal of the thermistor 109 is for connection with a first terminal of the first resistor 110 and for connection with a gate of the first field effect transistor 113;
the second end of the first resistor 110 is connected to the ground 111;
the anode of the first capacitor 112 is connected to the first terminal of the thermistor 109 and to the source of the first field effect transistor 113; the cathode of the first capacitor 112 is used for being connected with the second end of the thermistor 109, for being connected with the first end of the first resistor 110, and for being connected with the gate of the first field effect transistor 113;
the source of the first field effect transistor 113 is used for connecting with the positive input terminal 101 of the power supply; the drain of the first field effect transistor 113 is for connection with the positive output terminal 116, for connection with the cathode of the diode 114, and for connection with the anode of the second capacitor 115;
the anode of the diode 114 is used for being connected with the cathode input end 102 of the power supply and is used for being connected with the cathode output end 117; the cathode of the diode 114 is used for being connected with the anode output end;
the positive pole of the second capacitor 115 is connected to the positive output terminal 116; the cathode of the second capacitor 115 is for connection to the negative input 102 of the power supply and for connection to the negative output 117.
Specifically, the positive input 101 of the power supply and the negative input 102 of the power supply are used for connecting with the power supply terminal of the photovoltaic module, the positive input 101 of the power supply can be connected with, but is not limited to, the positive terminal of the power supply of the photovoltaic module, and the negative input 102 of the power supply can be connected with, but is not limited to, the negative terminal of the power supply of the photovoltaic module. It is understood that the positive input 101 of the power source and the negative input 102 of the power source can also be used for connecting with a controller of the photovoltaic module, and is not limited thereto.
The positive output 116 and the negative output 117 are operable to connect to a back-end circuit of the photovoltaic module system for providing power thereto.
When the power source end of the pv module starts to supply power to the back-end circuit, the ambient temperature around the thermistor 109 is initially low, and the resistance thereof is large, which results in a high-voltage signal at the source of the first fet 113. The first resistor 110 has a relatively fixed resistance and is connected to the ground 111, resulting in a low voltage signal at the gate of the first fet 113 (relative to the voltage signal at the source of the first fet 113, it can also be understood as a lower voltage signal than at the source of the first fet 113). Since the source of the first field effect transistor 113 is a high voltage signal, the gate of the first field effect transistor 113 is a low voltage signal (and the difference between the high voltage signal and the low voltage signal is greater than or equal to 0.7 v), the first field effect transistor 113 is in a conducting state at this time according to the characteristic of the first field effect transistor 113, that is, the power source terminal of the photovoltaic module supplies power to the back-end circuit normally.
When the ambient temperature around the thermistor 109 gradually rises to a preset temperature, the resistance value of the thermistor 109 gradually decreases, the voltage signal at the source of the first field effect transistor 113 is gradually decreased by using the voltage division principle, and when the difference between the voltage signal at the source of the first field effect transistor 113 and the voltage signal at the gate of the first field effect transistor 113 is less than 0.7 v, the first field effect transistor 113 is turned into an off state according to the characteristics of the first field effect transistor 113 at this time, that is, when the ambient temperature reaches the preset temperature, the power supply terminal of the photovoltaic module stops supplying power to the back-end circuit. It can be understood that, at the preset temperature, the thermal resistor 109 will not be fused, so as to effectively guarantee the service life of the thermal resistor 109; the preset temperature can be adjusted arbitrarily according to the manually set resistance of the first resistor 110, so as to further effectively improve the reaction rate of the thermistor 109.
In the process that the power supply end of the photovoltaic component continuously supplies power to the back-end circuit, the power supply end of the photovoltaic component can also periodically send heartbeat packet signals to the back-end circuit, when the overtemperature protection circuit for the photovoltaic component breaker receives the heartbeat packet signals, the temperature of the first field effect transistor 113 of the electronic device therein is liable to be instantaneously raised, which is liable to cause instantaneous temperature rise of the ambient temperature around the thermistor 109, and the resistance of the thermistor 109 is rapidly decreased, the voltage signal at the source of the first field effect transistor 113 is rapidly decreased by using the voltage division principle, and when the difference between the voltage signal at the source of the first field effect transistor 113 and the voltage signal at the gate of the first field effect transistor 113 is less than 0.7 volts, the first field effect transistor 113 is now turned off according to the characteristics of the first field effect transistor 113.
It should be noted that, although the first field effect transistor 113 is turned off at this time, since the diode 114 and the second capacitor 115 are in the charging energy storage state when the first field effect transistor 113 is in the on state before, when the first field effect transistor 113 is turned off, the diode 114 and the second capacitor 115 can be turned from the charging energy storage state to the discharging state, so that normal power supply to the back-end circuit can be continuously performed, thereby preventing the back-end circuit from being incapable of continuously supplying power due to the heartbeat packet signal. Secondly, because the sending duration of the heartbeat package signal is short, the first field effect transistor 113 can be quickly restored to a conducting state after the heartbeat package signal is sent, so that the power end of the photovoltaic module can continue to normally supply power to the rear-end circuit, and the phenomenon that the power supply is stopped to the rear-end circuit in the whole process can be avoided.
It is further understood that when the first fet 113 is turned off by the heartbeat packet signal, the first capacitor 112 may also absorb the interference signal at the gate and the source of the first fet 113 to prevent the first fet 113 from being damaged by the interference signal.
As an alternative the utility model discloses an overtemperature protection circuit for photovoltaic module closes ware still includes inductance 103, wherein:
a first end of the inductor 103 is used for being connected with a positive input end 101 of a power supply;
a second terminal of the inductor 103 is for connection to a first terminal of the thermistor 109 and for connection to a source of a first field effect transistor 113.
The overtemperature protection circuit for the photovoltaic module shutdown device further comprises a second field effect transistor 106, a transformer 104, a processor 107 and a temperature acquisition unit 108, wherein:
the drain of the second field effect transistor 106 is for connection to the second terminal of the inductance 103 and for connection to the input of the transformer 104; the source of the second field effect transistor 106 is for connection to a first terminal of the thermistor 109 and for connection to the source of the first field effect transistor 113; the gate of the second field effect transistor 106 is used for connecting with the processor 107;
the input end of the transformer 104 is used for being connected with the negative input end 102 of the power supply, and the output end of the transformer 104 is used for being connected with the processor 107;
the processor 107 is used for connecting with the temperature acquisition unit 108.
The over-temperature protection circuit for the photovoltaic module shutdown device mentioned in the utility model not only can realize the protection to the circuit under the too high condition of temperature through the combination of pure circuit devices such as thermistor 109, first resistance 110, first electric capacity 112, first field effect transistor 113, diode 114 and second electric capacity 115, but also can realize the protection to the circuit under the too high condition of temperature through the processing of treater 107 to ambient temperature signal.
Specifically, when the power supply end of the photovoltaic module starts to supply power to the back-end circuit (which may also include a periodic output heartbeat packet signal), the electrical signal output by the power supply end of the photovoltaic module may be rectified based on the inductor 103, and then the rectified electrical signal is input to the transformer 104 through the inductor 103, and then the rectified electrical signal is coupled to extract a carrier signal from the rectified electrical signal, and the carrier signal may be input to the processor 107 through the transformer 104. The carrier signal may include, but is not limited to, a heartbeat packet signal or a control signal, so that when the processor 107 receives the carrier signal, the temperature acquisition unit 108 can be controlled to acquire the ambient temperature.
Further, when the processor 107 converts the electrical signal collected by the temperature collecting unit 108 to obtain an ambient temperature, and detects that the ambient temperature reaches a preset temperature threshold, the processor 107 outputs a preset first voltage signal to the gate of the second effect transistor 106, so that a difference between a voltage signal at the source and a voltage signal at the gate of the second effect transistor 106 is less than 0.7 v, and further converts the second effect transistor 106 from an on state to an off state according to characteristics of the second effect transistor 106, that is, the power source end of the photovoltaic device stops supplying power to the back-end circuit. It is understood that the processor 107 may further output a preset second voltage signal to the gate of the second effect transistor 106 when the power source end of the photovoltaic device starts to supply power to the back-end circuit, so that a difference between the voltage signal at the source and the voltage signal at the gate of the second effect transistor 106 is greater than or equal to 0.7 v, and then control the second effect transistor 106 to be in a conducting state according to the characteristic of the second effect transistor 106.
Further, the processor 107 may further control the temperature acquisition unit 108 to acquire the ambient temperature in real time, and output a preset second voltage signal to the gate of the second effect transistor 106 when the converted current ambient temperature is lower than the preset temperature, so that a difference between the voltage signal at the source and the voltage signal at the gate of the second effect transistor 106 is greater than or equal to 0.7 v, and further control the second effect transistor 106 to recover to the on state according to the characteristic of the second effect transistor 106, that is, the power source end of the photovoltaic device continues to supply power to the back-end circuit normally.
It should be noted that, when the power end of the photovoltaic module periodically outputs the heartbeat packet signal to the backend circuit, the second field effect transistor 106 is likely to be heated instantaneously, so as to cause the ambient temperature collected by the temperature collecting unit 108 to be increased instantaneously. However, the processor 107 will sometimes regard the momentarily-increased electrical signal as a normal phenomenon, that is, when the processor detects the momentarily-increased electrical signal collected by the temperature collecting unit 108, the processor will not control the second effect transistor 106 to switch to the off state. At this time, since the temperature of the first field effect transistor 113 also increases instantaneously, the ambient temperature around the thermistor 109 is easily increased instantaneously, and further the resistance of the thermistor 109 decreases rapidly, the voltage signal at the source of the first field effect transistor 113 decreases rapidly by using the voltage division principle, and when the difference between the voltage signal at the source of the first field effect transistor 113 and the voltage signal at the gate of the first field effect transistor 113 is less than 0.7 v, the first field effect transistor 113 is turned into the off state at this time according to the characteristic of the first field effect transistor 113. Although the first field effect transistor 113 is turned off at this time, since the diode 114 and the second capacitor 115 are in the charging energy storage state when the first field effect transistor 113 is in the on state before, when the first field effect transistor 113 is turned off, the diode 114 and the second capacitor 115 can be turned from the charging energy storage state to the discharging state, so that normal power supply can be continuously performed to the rear-end circuit, and the situation that power cannot be continuously supplied to the rear-end circuit due to the heartbeat packet signal is avoided. Secondly, because the sending duration of the heartbeat package signal is short, the first field effect transistor 113 can be quickly restored to a conducting state after the heartbeat package signal is sent, so that the power end of the photovoltaic module can continue to normally supply power to the rear-end circuit, and the phenomenon that the power supply is stopped to the rear-end circuit in the whole process can be avoided.
It should be noted that, the processor 107 may also have a small probability of program runaway or program crash, and based on this, the pure devices such as the thermistor 109, the first resistor 110, the first capacitor 112, the first field effect transistor 113, the diode 114, and the second capacitor 115, and the devices such as the inductor 103, the second field effect transistor 106, the transformer 104, the processor 107, and the temperature acquisition unit 108 may be combined to process the above-mentioned events, so as to more accurately perform over-temperature protection on the circuit of the photovoltaic module.
As a further option of the embodiment of the present invention, the temperature acquisition unit 108 may be, but is not limited to, a temperature sensor.
As another alternative of the embodiment of the utility model provides an, this an overtemperature protection circuit for photovoltaic module closes off ware still includes high pressure changes low voltage power supply unit 105, wherein:
a first end of the high-voltage to low-voltage power supply unit 105 is used for being connected with a second end of the inductor 103 and is used for being connected with a drain electrode of the second field effect transistor 106;
a second terminal of the high-to-low voltage power supply unit 105 is adapted to be connected to a processor 107.
Specifically, the high-voltage to low-voltage power supply unit 105 may be configured to convert a high-voltage electrical signal output by a power end of the photovoltaic module into a low-voltage electrical signal for the processor 107 to normally operate, so as to reduce a device structure of the over-temperature protection circuit of the photovoltaic module shutdown device, and effectively reduce a design cost of the over-temperature protection circuit of the photovoltaic module shutdown device. It is understood that whether the first fet 113 or the second fet 106 is turned off, the high-to-low voltage power supply unit 105 is not affected to provide the low-voltage electrical signal to the processor 107.
Fig. 2 is a schematic structural diagram of a power supply unit for converting high voltage into low voltage according to an embodiment of the present invention. As shown in fig. 2, the high-to-low voltage power supply unit includes a microprocessor unit 206, a third capacitor 202, a fourth capacitor 203, and a second resistor 205, wherein:
a first pin of the micro-processing unit 206 is used for being connected with the second end of the inductor 103 and is used for being connected with the drain electrode of the second field effect transistor 106;
the second pin of the micro-processing unit 206 is used for connecting with the ground terminal 204;
the third pin of the micro-processing unit 206 is used for connecting with the first end of the second resistor 205;
the fourth pin of the micro-processing unit 206 is used for connecting with the processor 107;
the positive pole of the third capacitor 202 is used for being connected with the first pin of the micro-processing unit 206, and the negative pole of the third capacitor 202 is used for being connected with the ground terminal 204;
the positive electrode of the fourth capacitor 203 is used for being connected with the first pin of the micro-processing unit 206; the negative pole of the fourth capacitor 203 is connected with the negative pole of the third capacitor 202 and with the ground 204;
the second terminal of the second resistor 205 is used to connect to a first pin of the micro-processing unit 206.
The high-voltage to low-voltage power supply unit further includes a fifth capacitor 207 and a sixth capacitor 208, wherein:
the positive electrode of the fifth capacitor 207 is used for being connected with the fourth pin of the microprocessor unit 206, and the negative electrode of the fifth capacitor 207 is used for being connected with the ground terminal 204;
the positive pole of the sixth capacitor 208 is used for being connected with the fourth pin of the micro-processing unit 206; the cathode of the sixth capacitor 208 is connected to the cathode of the fifth capacitor 207 and to the ground 204.
The model of the micro-processing unit 206 may be, but is not limited to, LN5052B332 MR.
As a further alternative to the embodiments of the present invention, the third capacitor 202 may be, but is not limited to, 10 microfarads.
As a further alternative to the embodiment of the present invention, the fourth capacitor 203 may be, but is not limited to, 0.1 microfarads.
As a further alternative to the embodiment of the present invention, the fifth capacitor 207 may be, but is not limited to, 10 microfarads.
As a further alternative to the embodiments of the present invention, the sixth capacitor 208 may be, but is not limited to, 0.1 microfarads.
The above description is merely an exemplary embodiment of the present disclosure, and the scope of the present disclosure is not limited thereto. That is, all equivalent changes and modifications made in accordance with the teachings of the present disclosure are intended to be included within the scope of the present disclosure. Embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure herein. This application is intended to cover any variations, uses, or adaptations of the disclosure following, in general, the principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.
Claims (10)
1. An overtemperature protection circuit for a photovoltaic module shutoff device is characterized by comprising a thermistor, a first resistor, a first capacitor, a first field effect transistor, a diode and a second capacitor, wherein:
the first end of the thermistor is used for being connected with the positive input end of a power supply and is used for being connected with the source electrode of the first field effect transistor; the second end of the thermistor is used for being connected with the first end of the first resistor and is used for being connected with the grid electrode of the first field effect transistor;
the second end of the first resistor is used for being connected with a grounding end;
the positive electrode of the first capacitor is used for being connected with the first end of the thermistor and is used for being connected with the source electrode of the first field effect transistor; the negative electrode of the first capacitor is used for being connected with the second end of the thermistor, the first end of the first resistor and the grid of the first field effect transistor;
the source electrode of the first field effect transistor is used for being connected with the positive input end of the power supply; the drain electrode of the first field effect transistor is used for being connected with the anode output end, the cathode of the diode and the anode of the second capacitor;
the anode of the diode is used for being connected with the cathode input end of the power supply and is used for being connected with the cathode output end; the cathode of the diode is used for being connected with the anode output end;
the positive electrode of the second capacitor is used for being connected with the positive electrode output end; and the negative electrode of the second capacitor is used for being connected with the negative electrode input end of the power supply and is used for being connected with the negative electrode output end.
2. The circuit of claim 1, further comprising an inductor, wherein:
the first end of the inductor is used for being connected with the positive input end of the power supply;
and the second end of the inductor is used for being connected with the first end of the thermistor and is used for being connected with the source electrode of the first field effect transistor.
3. The circuit of claim 2, further comprising a second field effect transistor, a transformer, a processor, and a temperature acquisition unit, wherein:
the drain electrode of the second field effect transistor is used for being connected with the second end of the inductor and is used for being connected with the input end of the transformer; the source electrode of the second field effect transistor is used for being connected with the first end of the thermistor and is used for being connected with the source electrode of the first field effect transistor; the grid electrode of the second field effect transistor is used for being connected with the processor;
the input end of the transformer is used for being connected with the negative input end of the power supply, and the output end of the transformer is used for being connected with the processor;
the processor is used for being connected with the temperature acquisition unit.
4. The circuit of claim 3, wherein the temperature acquisition unit is a temperature sensor.
5. The circuit of claim 3, further comprising a high-to-low voltage power supply unit, wherein:
the first end of the high-voltage to low-voltage power supply unit is used for being connected with the second end of the inductor and is used for being connected with the drain electrode of the second field effect transistor;
and the second end of the high-voltage to low-voltage power supply unit is used for being connected with the processor.
6. The circuit of claim 5, wherein the high-to-low voltage power supply unit comprises a microprocessor unit, a third capacitor, a fourth capacitor, and a second resistor, wherein:
a first pin of the microprocessing unit is used for being connected with a second end of the inductor and is used for being connected with a drain electrode of the second field effect transistor;
the second pin of the micro-processing unit is used for being connected with the grounding terminal;
the third pin of the micro-processing unit is used for being connected with the first end of the second resistor;
the fourth pin of the micro-processing unit is used for being connected with the processor;
the anode of the third capacitor is used for being connected with the first pin of the microprocessing unit, and the cathode of the third capacitor is used for being connected with the grounding terminal;
the positive electrode of the fourth capacitor is used for being connected with the first pin of the microprocessing unit; the negative electrode of the fourth capacitor is used for being connected with the negative electrode of the third capacitor and is used for being connected with the grounding terminal;
and the second end of the second resistor is used for being connected with the first pin of the microprocessing unit.
7. The circuit of claim 6, wherein the high-to-low voltage power supply unit further comprises a fifth capacitor and a sixth capacitor, wherein:
the positive electrode of the fifth capacitor is used for being connected with a fourth pin of the microprocessing unit, and the negative electrode of the fifth capacitor is used for being connected with the grounding terminal;
the positive electrode of the sixth capacitor is used for being connected with a fourth pin of the micro-processing unit; and the negative electrode of the sixth capacitor is used for being connected with the negative electrode of the fifth capacitor and is used for being connected with the grounding terminal.
8. The circuit of claim 7, wherein the capacity of the third capacitor is the same as the capacity of the fifth capacitor.
9. The circuit of claim 8, wherein the third capacitor has a capacitance of 10 microfarads.
10. The circuit of claim 7, wherein the fourth capacitor has the same capacitance as the sixth capacitor, and wherein the fourth capacitor is 0.1 microfarads.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221268110.2U CN217486158U (en) | 2022-05-25 | 2022-05-25 | Overtemperature protection circuit for photovoltaic module shutoff device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221268110.2U CN217486158U (en) | 2022-05-25 | 2022-05-25 | Overtemperature protection circuit for photovoltaic module shutoff device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN217486158U true CN217486158U (en) | 2022-09-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202221268110.2U Active CN217486158U (en) | 2022-05-25 | 2022-05-25 | Overtemperature protection circuit for photovoltaic module shutoff device |
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| Country | Link |
|---|---|
| CN (1) | CN217486158U (en) |
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2022
- 2022-05-25 CN CN202221268110.2U patent/CN217486158U/en active Active
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