CN217485470U - LED wafer, LED chip, LED and display device - Google Patents

Abstract

The utility model discloses a LED wafer, LED chip, LED and display device, this LED wafer includes base plate, a plurality of epitaxial wafers and a plurality of coil, a plurality of epitaxial wafer intervals set up on the base plate, each epitaxial wafer includes n type semiconductor layer, quantum well layer and p type semiconductor layer, n type semiconductor layer sets up on the base plate, the quantum well layer sets up on n type semiconductor layer, p type semiconductor layer sets up on the quantum well layer, be provided with the positive pole on the n type semiconductor layer, be provided with the negative pole on the n type semiconductor layer; the plurality of coils and the plurality of epitaxial wafers are arranged in a one-to-one correspondence mode, each coil is electrically connected between the corresponding anode and the corresponding cathode, and the coils are used for generating current flowing from the anodes to the cathodes in a magnetic field. The LED wafer can improve the detection efficiency of photoelectric parameters of the LED chips on the LED wafer, so that the purpose of detecting the photoelectric parameters of a large number of LED chips can be achieved.

Description

LED wafer, LED chip, LED and display device

Technical Field

The utility model relates to the field of semiconductor technology, especially, relate to a LED wafer, LED chip, LED and display device.

Background

An LED (Light Emitting Diode) is a semiconductor device that emits Light by using energy released during carrier recombination, and has many advantages of low power consumption, pure chromaticity, long service life, small volume, fast response time, energy saving, environmental protection, and the like.

Generally, an LED wafer includes a plurality of LED chips, specifically, the LED wafer can be cut to obtain a plurality of LED chips, the LED chips are core portions of the LEDs, and the optoelectronic parameters such as the brightness, the forward voltage, and the wavelength of the LED chips determine the optoelectronic parameters such as the brightness, the forward voltage, and the wavelength of the LEDs. The manufacturing of the LED wafer at present mainly comprises an LED wafer processing procedure, a detection procedure, a packaging procedure and the like, wherein the detection procedure is mainly to detect photoelectric parameters of an LED chip included in the LED wafer through a probe tester, namely, a probe of the probe tester is contacted with an anode and a cathode of the LED chip, and voltage and current are input to enable the LED chip to emit light, so that photoelectric parameters of forward voltage, brightness and the like of the LED chip are obtained, and the LED chip is conveniently screened and classified.

However, the probes of the prober contact the anodes and cathodes of the LED chips, and therefore the probes need to be aligned with the anodes and cathodes, which requires a long time, and one LED wafer may include several million LED chips, which requires a lot of time for detecting the photoelectric parameters of each LED chip, and is not favorable for detecting the photoelectric parameters of all the LED chips on the LED wafer.

SUMMERY OF THE UTILITY MODEL

The embodiment of the application discloses an LED wafer and an LED, which can improve the detection efficiency of photoelectric parameters of LED chips on the LED wafer so as to achieve the purpose that a large number of LED chips can be detected by the photoelectric parameters.

In order to achieve the above object, an embodiment of the present application discloses an LED wafer, including:

a substrate;

the epitaxial wafers are arranged on the substrate at intervals, each epitaxial wafer comprises an n-type semiconductor layer, a quantum well layer and a p-type semiconductor layer, the n-type semiconductor layer is arranged on the substrate, the quantum well layer is arranged on the n-type semiconductor layer, the p-type semiconductor layer is arranged on the quantum well layer, an anode is arranged on the n-type semiconductor layer, and a cathode is arranged on the n-type semiconductor layer;

the plurality of coils and the plurality of epitaxial wafers are arranged in one-to-one correspondence, each coil is electrically connected between the corresponding anode and the corresponding cathode, and the coils are used for generating current flowing from the anode to the cathode in a magnetic field.

In this embodiment, a plurality of epitaxial wafers are disposed on a substrate at intervals, each epitaxial wafer includes an n-type semiconductor layer, a quantum well layer and a p-type semiconductor layer, the n-type semiconductor layer is disposed on the substrate, the quantum well layer is disposed on the n-type semiconductor layer, the p-type semiconductor layer is disposed on the quantum well layer, an anode is disposed on the n-type semiconductor layer, and a cathode is disposed on the n-type semiconductor layer, so that a plurality of individual LED chips can be obtained after the LED wafer is divided, which facilitates further processing of the individual LED chips, such as manufacturing of LEDs after welding of pins connected to the anode and the cathode, and applying the LED chips to other devices.

And the plurality of coils correspond to the plurality of epitaxial wafers one to one, so that each epitaxial wafer is provided with one coil. And each coil is respectively and electrically connected between the corresponding anode and the corresponding cathode, so that the anode and the cathode on each LED chip can be conducted through the coil, and the coil can generate magnetic induction current when the LED chip is in a magnetic field, so that the coil can generate current flowing from the anode to the cathode, the LED chip can emit light, and the detection of the conduction condition, the forward voltage, the brightness and other photoelectric parameters of the LED chip is realized. Compare in detecting the LED chip through the prober, produce in the magnetic field through the coil and detect the photoelectric parameter of LED chip by the negative pole of positive pole flow direction electric current, only need produce the magnetic field through magnetic field equipment, then arrange the LED chip in the magnetic field can detect promptly, and the size in accessible magnetic field equipment control magnetic field, make the detection convenient and fast of the photoelectric parameter of LED chip, thereby make a plurality of LED chips on the LED wafer can carry out the detection of photoelectric parameter fast, with the purpose that realizes LED chip volume and examine.

In a possible implementation manner of the first aspect, the coil includes an anode connection portion, a cathode connection portion, and a convolution portion electrically connected between the anode connection portion and the cathode connection portion, where the anode connection portion is electrically connected to the anode, the cathode connection portion is electrically connected to the cathode, and the convolution portion is configured to generate the current in the magnetic field.

In a possible implementation manner of the first aspect, a plane where the convolution portion is located is parallel to the plate surface of the substrate.

In a possible implementation manner of the first aspect, the convolution portion has a plurality of U-shaped metal wires formed by bending, and the plurality of U-shaped metal wires are connected in sequence to form a U-shaped metal wire array having two free ends, one of the two free ends is electrically connected to the cathode connection portion, and the other one of the two free ends is electrically connected to the anode connection portion.

In a possible implementation manner of the first aspect, the U-shaped metal lines include short sides and two long sides, the two long sides are disposed opposite to each other, the short sides are located between the two long sides, two ends of each short side are respectively connected to two opposite ends of the two long sides, the U-shaped metal lines are arranged in an array along an extending direction of the short sides, and a distance between every two adjacent U-shaped metal lines is not equal to a length of the short sides.

In a possible implementation manner of the first aspect, the LED wafer further includes an insulating layer, the insulating layer is disposed on the n-type semiconductor layer and the p-type semiconductor layer and respectively avoids the cathode and the anode, and the coil is located on a side of the insulating layer away from the substrate.

In a possible implementation manner of the first aspect, the coil is a copper wire coil;

and/or the presence of a gas in the atmosphere,

the substrate is a sapphire substrate.

In a second aspect, an embodiment of the present application discloses an LED chip formed by cutting any one of the LED wafers according to the first aspect.

In a third aspect, embodiments of the present application disclose an LED including any one of the LED chips described in the second aspect.

In a fourth aspect, embodiments of the present application disclose a display device comprising any one of the LEDs of the third aspect.

Compared with the prior art, the application has at least the following beneficial effects:

in this application, a plurality of epitaxial wafers are arranged on the substrate at intervals, each epitaxial wafer comprises an n-type semiconductor layer, a quantum well layer and a p-type semiconductor layer, the n-type semiconductor layer is arranged on the substrate, the quantum well layer is arranged on the n-type semiconductor layer, the p-type semiconductor layer is arranged on the quantum well layer, an anode is arranged on the n-type semiconductor layer, and a cathode is arranged on the n-type semiconductor layer, so that a plurality of independent LED chips can be obtained after the LED wafer is divided, further processing of the independent LED chips is facilitated, and the LEDs can be obtained after processes such as welding pins connected to the anode and the cathode, so that the LED chips can be applied to other equipment.

And the plurality of coils correspond to the plurality of epitaxial wafers one to one, so that each epitaxial wafer is provided with one coil. And each coil is respectively and electrically connected between the corresponding anode and the corresponding cathode, so that the anode and the cathode on each LED chip can be conducted through the coil, and the coil can generate magnetic induction current when the LED chip is in a magnetic field, so that the coil can generate current flowing from the anode to the cathode, the LED chip can emit light, and the detection of the conduction condition, the forward voltage, the brightness and other photoelectric parameters of the LED chip is realized. Compare in detecting the LED chip through the probe instrument, produce in the magnetic field by the positive pole to the negative pole electric current and detect the photoelectric parameter of LED chip through the coil, only need produce the magnetic field through magnetic field equipment, then place the LED chip in the magnetic field and can detect promptly, and the size in accessible magnetic field equipment control magnetic field, make the detection convenient and fast of the photoelectric parameter of LED chip, thereby make a plurality of LED chips on the LED wafer can carry out the detection of photoelectric parameter fast, with the purpose that realizes LED chip volume and examine.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without creative efforts.

Fig. 1 is a schematic structural diagram of a wafer according to an embodiment of the present disclosure;

fig. 2 is a schematic structural diagram of a substrate, an epitaxial wafer and a coil combination according to an embodiment of the present application;

FIG. 3 is a schematic diagram of an anode, cathode and coil combination according to an embodiment of the present disclosure;

FIG. 4 is a second schematic structural diagram of an anode, cathode and coil assembly provided in an embodiment of the present application;

FIG. 5 is a third schematic structural diagram of an anode, cathode and coil assembly provided in an embodiment of the present application;

FIG. 6 is a fourth schematic diagram of the structure of an anode, cathode and coil assembly provided in the embodiments of the present application;

fig. 7 is a schematic diagram illustrating steps of manufacturing an LED wafer according to an embodiment of the present disclosure;

fig. 8 is a schematic structural diagram of an LED chip provided in an embodiment of the present application;

FIG. 9 is a schematic structural diagram of an LED provided in an embodiment of the present application;

fig. 10 is a schematic structural diagram of a display screen according to an embodiment of the present application.

Description of reference numerals:

1-a substrate; 2-an epitaxial wafer; a 21-n type semiconductor layer; 22-a quantum well layer; a 23-p type semiconductor layer; 24-an anode; 25-a cathode; 26-an insulating layer; 3-a coil; 31-an anode connection; 32-a cathode connection; 33-a turning part; 1000-a display device; 1100-LED; 1110-an LED chip; 100-LED wafer.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

In the present invention, the terms "upper", "lower", "left", "right", "front", "rear", "top", "bottom", "inner", "outer", "middle", "vertical", "horizontal", "lateral", "longitudinal", and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings. These terms are used primarily to better describe the invention and its embodiments, and are not intended to limit the indicated devices, elements or components to a particular orientation or to be constructed and operated in a particular orientation.

Moreover, some of the above terms may be used to indicate other meanings besides the orientation or positional relationship, for example, the term "on" may also be used to indicate some kind of attachment or connection relationship in some cases. The specific meaning of these terms in the present invention can be understood according to specific situations by those of ordinary skill in the art.

Furthermore, the terms "mounted," "disposed," "provided," "connected," and "connected" are to be construed broadly. For example, it may be a fixed connection, a removable connection, or a unitary construction; can be a mechanical connection, or an electrical connection; may be directly connected, or indirectly connected through intervening media, or may be in internal communication between two devices, elements or components. The specific meaning of the above terms in the present invention can be understood according to specific situations by those of ordinary skill in the art.

Furthermore, the terms "first," "second," and the like, are used primarily to distinguish one device, element, or component from another (the specific nature and configuration may be the same or different), and are not used to indicate or imply the relative importance or number of the indicated devices, elements, or components. "plurality" means two or more unless otherwise specified.

The utility model provides a LED wafer, LED chip, LED and display device, this LED wafer can improve the detection efficiency of the photoelectric parameter of the LED chip on the LED wafer to the efficiency of the detection that carries out photoelectric parameter to a large amount of LED chips is carried out in the improvement, thereby realizes the purpose of examining the volume that the photoelectric parameter of LED chip detected.

The technical solutions of the present application will be described in detail below with reference to specific embodiments and accompanying drawings.

Example one

The embodiment of the application provides an LED wafer, as shown in fig. 1-3, including a substrate 1, a plurality of epitaxial wafers 2 and a plurality of coils 3, wherein the plurality of epitaxial wafers 2 are disposed on the substrate 1 at intervals, each epitaxial wafer 2 includes an n-type semiconductor layer 21, a quantum well 22 layer and a p-type semiconductor layer 23, the n-type semiconductor layer 21 is disposed on the substrate 1, the quantum well 22 layer is disposed on the n-type semiconductor layer 21, the p-type semiconductor layer 23 is disposed on the quantum well 22 layer, an anode 24 is disposed on the n-type semiconductor layer 21, and a cathode 25 is disposed on the n-type semiconductor layer 21; the plurality of coils 3 are arranged in one-to-one correspondence with the plurality of epitaxial wafers 2, each coil 3 is electrically connected between a corresponding anode 24 and cathode 25, and the coils 3 are used for generating current flowing from the anode 24 to the cathode 25 in a magnetic field.

The LED chip 1110 is a pn junction device, and has a core portion including a p-type semiconductor layer 23 and an n-type semiconductor layer 21, wherein when the p-type semiconductor layer 23 is connected to a positive electrode of a power supply and the n-type semiconductor layer 21 is connected to a negative electrode of the power supply, that is, when the potential of the p-type semiconductor layer 23 is higher than the potential of the n-type semiconductor layer 21, electrons of the n-type semiconductor layer 21 are continuously diffused toward the p-type semiconductor layer 23, meet holes in the vicinity of a pn junction (i.e., a quantum well 22 layer), and are recombined with the holes to generate photons, so that the LED chip 1110 emits light, and the energy of the photons released when the electrons are recombined with the holes is different according to a wafer material for manufacturing the LED chip 1110, so that light of different colors is emitted. That is, the LED chip 1110 is a solid light emitting device that converts electric energy into light energy. It should be noted that a phenomenon in which free electrons and holes recombine in a semiconductor and disappear as a pair is called recombination.

In the present embodiment, a plurality of epitaxial wafers 2 are disposed on a substrate 1 at intervals, each epitaxial wafer 2 includes an n-type semiconductor layer 21, a quantum well 22 layer and a p-type semiconductor layer 23, the n-type semiconductor layer 21 is disposed on the substrate 1, the quantum well 22 layer is disposed on the n-type semiconductor layer 21, the p-type semiconductor layer 23 is disposed on the quantum well 22 layer, an anode 24 is disposed on the n-type semiconductor layer 21, and a cathode 25 is disposed on the n-type semiconductor layer 21, so that the LED wafer 100 is divided into a plurality of individual LED chips 1110, and further processing of the individual LED chips 1110, such as soldering pins connected to the anode 24 and the cathode 25, is facilitated to fabricate the LED1100, so that the LED chips 1110 can be applied to other devices.

The plurality of coils 3 correspond to the plurality of epitaxial wafers 2 one-to-one, so that one coil 3 is provided on each epitaxial wafer 2. Each coil 3 is electrically connected between the corresponding anode 24 and cathode 25, so that the anode 24 and cathode 25 on each LED chip 1110 can be conducted through the coil 3, and when the LED chip 1110 is in a magnetic field, the coil 3 can generate a magnetic induction current, so that the coil 3 can generate a current flowing from the anode 24 to the cathode 25, and the LED chip 1110 can emit light, thereby detecting the conduction condition of the LED chip 1110, the forward voltage, the brightness and other photoelectric parameters. Compare in detecting LED chip 1110 through the probe instrument, produce in the magnetic field by the positive pole 24 current that flows to negative pole 25 through coil 3 and detect the photoelectric parameter of LED chip 1110, only need produce the magnetic field through magnetic field equipment, then place LED chip 1110 in the magnetic field and can detect promptly, and the size in accessible magnetic field equipment control magnetic field, make the detection convenient and fast of LED chip 1110's photoelectric parameter, thereby make a plurality of LED chips 1110 on the LED wafer 100 can carry out photoelectric parameter's detection fast, in order to realize the purpose that LED chip 1110 volume was examined.

The coil 3 is configured to generate a current flowing from the anode 24 to the cathode 25 in a magnetic field so that the potential of the anode 24 is higher than the potential of the cathode 25, thereby diffusing electrons from the n-type semiconductor layer 21 to the p-type semiconductor layer 23 to brighten the LED chip 1110 to emit light, and detecting photoelectric parameters such as a forward voltage and luminance of the LED chip 1110.

As shown in fig. 3, the coil 3 includes an anode connection portion 31, a cathode connection portion 32, and a convolution portion 33 electrically connected between the anode connection portion 31 and the cathode connection portion 32, wherein the anode connection portion 31 is electrically connected to the anode 24, the cathode connection portion 32 is electrically connected to the cathode 25, and the convolution portion 33 is used for generating a current in a magnetic field. Accordingly, when a magnetic field acts on the LED chip 1110, the convolution portion 33 generates a magnetically induced current so that the current flows from the anode 24 to the cathode 25, thereby detecting an electro-optical parameter of the LED chip 1110, and the coil 3 capable of generating the magnetically induced current in the magnetic field is easy to manufacture and low in cost.

Optionally, the coil 3 is a metal coil, so that the metal coil can generate a magnetically induced current in a magnetic field, and conduct the anode 24 and the cathode 25 of the LED chip 1110. The connection between the anode connection portion 31 and the anode 24 of the coil 3 may be a welded connection, the connection between the cathode connection portion 32 and the cathode 25 may be a welded connection, and the anode connection portion 31, the cathode connection portion 32, and the convolution portion 33 are integrally formed, that is, may be obtained by bending and convolution of the same wire, and thus may be easily implemented.

In some embodiments, the surface of the convolution 33 is parallel to the surface of the substrate 1. Therefore, when the LED chip 1110 is subjected to the detection of the photoelectric parameter, the magnetic lines of force of the magnetic field can pass through the LED chip 1110 in the direction perpendicular to the plate surface of the substrate 1, and the relative positional relationship between the LED chip 1110 and the magnetic lines of force can be easily controlled while ensuring a large amount of magnetic flux passing through the convolution portion 33, that is, the relative positional relationship between the LED chip 1110 and the magnetic field device generating the magnetic field can be easily controlled, thereby facilitating the detection of the photoelectric parameter of the LED chip 1110. Furthermore, the surface on which the turning part 33 is provided is parallel to the plate surface of the substrate 1, and the turning part 33 can be easily manufactured.

Specifically, the plane on which the convolution portion 33 is located has a plurality of relative positional relationships in parallel with the plate surface of the substrate 1, for example, the convolution portion 33 may be located on the surface of the substrate 1 away from the epitaxial wafer 2, or may be located on the surface of the substrate 1 on which the epitaxial wafer 2 is located, or may be located on the surface of the epitaxial wafer 2 away from the substrate 1, and the convolution portion 33 may be located on the isolation layer, where the isolation layer may isolate the convolution portion 33 from the epitaxial wafer 2 to prevent the convolution portion 33 from being conducted with the p-type semiconductor layer 23 or the n-type semiconductor layer 21, or of course, the convolution portion 33 may be located at other positions, as long as the plane on which the convolution portion 33 is located is parallel with the plate surface of the substrate 1, which is not limited herein.

As shown in fig. 3, the convolution 33 may be formed by bending a metal wire, that is, the convolution 33 has a plurality of U-shaped metal wires formed by bending, and the plurality of U-shaped metal wires are connected in sequence to form a U-shaped metal wire array having two free ends, one of the two free ends is electrically connected to the cathode connection portion 32 and the other is electrically connected to the anode connection portion 31. The shape of the convolution 33 is made simple by providing the convolution 33 in the shape of a bent U-shaped array of metal lines.

It should be noted that the U-shaped metal wire formed by bending the convolution portion 33 has a plurality of bends, that is, the U-shaped metal wire is substantially U-shaped, for example, the U-shape has two opposite long sides, one end of each of the two long sides is connected to a first short side, and the other end of each of the two long sides is connected to a second short side, for example, a plurality of U-shaped metal wires are connected in sequence, that is, the second short sides of two adjacent U-shaped metal wires are connected to each other, so that the convolution portion 33 forms a U-shaped metal wire array having two free ends.

In addition, the U-shaped metal wire array with two free ends has various structural shapes, and in one possible shape, as shown in fig. 4, the U-shaped metal wire array can be in a shape that the metal wires are bent to form wavy lines, and the wave crests and the wave troughs in the wavy lines have larger distances. In a second possible implementation manner, as shown in fig. 3 and 5, the U-shaped metal wire array may be formed by bending metal wires into a square wave shape, a distance between a peak and a trough in the square wave is large, and the square wave may be a trapezoidal square wave or a rectangular square wave. The structural shape of the above U-shaped metal wire array, that is, the structural shape of the convolute portion 33 is simple and easy to implement, and the patterns formed by bending are common patterns and easy to manufacture. Of course, the turning part 33 may have another configuration, and is not limited herein.

Optionally, as shown in fig. 3, the U-shaped metal lines include short sides and two long sides, the two long sides are disposed opposite to each other, the short sides are located between the two long sides, two ends of the short sides are respectively connected to two opposite ends of the two long sides, the plurality of U-shaped metal lines are arranged in an array along an extending direction of the short sides, and a distance between two adjacent U-shaped metal lines is not equal to a length of the short sides. Therefore, the areas enclosed by two adjacent U-shaped metal wires are different in size, so that the magnetic fluxes passing through the two adjacent U-shaped metal wires are different, the current generated by the metal wires on two adjacent long sides is different in size, and the direction of the magnetic force lines in the magnetic field can be controlled according to the specific shape of the rotor 33, so that the current generated by the rotor 33 can flow from the anode 24 to the cathode 25.

For example, as shown in fig. 3, the convolution part 33 is square-wave shaped and rectangular-square-wave shaped, when the long side of the U-shaped metal wire points to the cathode 25 from the anode 24, the magnetic force line direction of the magnetic field can be made to point to the side of the substrate 1 where the epitaxial wafer 2 is disposed from the side of the substrate 1 away from the epitaxial wafer 2, so that the current direction on each long side points to the cathode 25, and because the magnetic induction current generated by the U-shaped metal wire with a large area is large, the current on the long side of the U-shaped metal wire with a large area is large, and the current on the long side of the U-shaped metal wire with a small area is small, the current of the convolution part 33 can still flow from the anode 24 to the cathode 25 after being cancelled. In addition, in the plurality of U-shaped wires connected in sequence, the short side of the U-shaped wire with a larger area may be disposed near the anode 24, and the short side of the U-shaped wire with a smaller area may be disposed near the cathode 25, so that the current flowing from the anode 24 to the cathode 25 in the convolution 33 has a larger value, and thus, the convolution 33 may generate a current of a magnitude satisfying the requirement using a magnetic field with a smaller magnetic flux, and the convolution 33 may generate a current that may cause the LED chip 1110 to emit light.

In addition, the extending directions of the short sides of the U-shaped metal wires are various, for example, as shown in fig. 3, the short sides of a plurality of U-shaped metal wires are arranged close to the anode 24 and the cathode 25, i.e., the long sides can be directed from the anode 24 to the cathode 25; alternatively, as shown in FIG. 6, the short side of the U-shaped wire is directed from the anode 24 to the cathode 25; the extending direction of the short side of the metal wire may form an angle with the connecting line between the anode 24 and the cathode 25, which is not limited herein.

In some embodiments, as shown in fig. 2, the LED wafer 100 further includes an insulating layer 26, the insulating layer 26 is disposed on the n-type semiconductor layer 21 and the p-type semiconductor layer 23 and respectively avoids the cathode 25 and the anode 24, and the coil 3 is disposed on a side of the insulating layer 26 away from the substrate 1. Thus, the coil 3 can be separated from the n-type semiconductor layer 21 and the p-type semiconductor layer 23 by the insulating layer 26, and the coil 3 is prevented from being electrically connected to the n-type semiconductor layer 21 and the p-type semiconductor layer 23 to cause a short circuit. The insulating layer 26 is disposed on the n-type semiconductor layer 21 and the p-type semiconductor layer 23 to avoid the cathode 25 and the anode 24, respectively, and may also be a protective layer on the surfaces of the n-type semiconductor layer 21 and the p-type semiconductor layer 23 to prevent the n-type semiconductor layer 21 and the p-type semiconductor layer 23 from being contaminated or worn, and to facilitate the fixing of the coil 3 and the connection of the coil 3 with the anode 24 and the cathode 25.

In addition, after the LED wafer 100 completes the detection of the optoelectronic parameters, the coil 3 needs to be removed, and then the coil 3 is located on the side of the insulating layer 26 away from the substrate 1, so as to facilitate the operation of removing the coil 3.

The material of the insulating layer 26 may be at least one of silicon nitride, silicon dioxide, or a combination of silicon nitride and silicon dioxide, and of course, the insulating layer 26 may also be other insulating and light-transmitting materials, which is not limited herein.

Optionally, the coil 3 may be a copper wire coil 3, which is made of a readily available material and has a low cost, or may be an aluminum wire coil 3, a gold wire coil 3, a silver wire coil 3, or the like, or may be another metal wire capable of conducting electricity and generating magnetic induction current in a magnetic field, which is not limited herein.

Alternatively, the substrate 1 may be made of various materials, for example, the substrate 1 may be a sapphire substrate 1, which has the advantages of high strength, high hardness, high wear resistance, etc., and is a common material for manufacturing the substrate 1 in the LED wafer 100, and is easy to obtain; the substrate 1 may be a beryllium oxide substrate 1, an aluminum nitride substrate 1, a ceramic substrate 1, a silicon carbide substrate 1, an aluminum silicon carbide substrate 1, or the like, and is not limited thereto.

In the manufacturing process of the LED wafer 100, as shown in fig. 7, in the first step, a plurality of epitaxial wafers 2 without the anode 24 and the cathode 25 are manufactured on the substrate 1, such as an n-type semiconductor layer 21, a quantum well 22 layer, and a p-type semiconductor layer 23 are sequentially manufactured on the sapphire substrate 1; a second step of etching the partial sub-well 22 layer and the p-type semiconductor layer 23 to expose a portion of the n-type semiconductor layer 21; thirdly, an anode 24 is manufactured on one surface of the p-type semiconductor layer 23 far away from the substrate 1, and a cathode 25 is manufactured on one surface of the exposed n-type semiconductor layer 21 far away from the substrate 1; fourthly, depositing an insulating layer 26 on the exposed part of the n-type semiconductor layer 21, the p-type semiconductor layer 23, the anode 24 and the cathode 25 which are far away from the substrate 1; a fifth step of etching the insulating layer 26 to expose the anode 24 and the cathode 25; sixthly, a metal coil is manufactured on one surface of the insulating layer 26 far away from the substrate 1, one end of the coil 3 is electrically connected with the anode 24, and the other end of the coil 3 is electrically connected with the cathode 25. So far, the manufacture of the LED wafer 100 is completed, the manufactured LED wafer 100 can be placed in a magnetic field, if the direction of magnetic lines can be made as shown in the X direction in fig. 7, so that the metal coil can generate current, the epitaxial wafer 2 can emit light, at this time, the epitaxial wafer 2 can be detected by a photometric instrument or an instrument for measuring current and voltage, if the light emitted by the epitaxial wafer 2 can be tested by a light intensity tester for light intensity and frequency spectrum, the detection of photoelectric parameters can be performed on a plurality of epitaxial wafers 2 provided with the metal coil on the LED wafer 100, and the detection of the photoelectric parameters of the LED wafer 100 can be realized.

After the LED wafer 100 is inspected, the coil 3 electrically connected between the anode 24 and the cathode 25 may be removed, the LED wafer 100 with the coil 3 removed may be divided to obtain a plurality of individual LED chips 1110, and the LED chips 1110 may be sorted according to the inspection result. The coil 3 electrically connected between the anode 24 and the cathode 25 may be removed by melting the coil 3 by heating at a high temperature, or the coil 3 may be separated from the anode 24 and the cathode 25 by cutting, which is not limited herein.

Example two

The embodiment of the present application further provides an LED chip, as shown in fig. 8, the LED chip 1110 is formed by cutting any one of the LED wafers 100 according to the first embodiment.

In this embodiment, the LED chips 1110 are obtained by cutting the LED wafer 100 according to the first embodiment, so that each LED chip 1110 can detect the photoelectric parameter, and the LED chips 1110 can be sorted according to the respective photoelectric parameter, so as to facilitate further use of the LEDs 1100, and meanwhile, the photoelectric parameters of the LED chips 1110 classified into the same category have better consistency, which is beneficial to improving the quality of the product with the LED chips 1110.

In addition, in the process of manufacturing the LED wafer 100 from a wafer material and further cutting the LED chips 1110, the manufactured LED chips 1110 can be subjected to quantity inspection, the inspection method is simple and fast, and the manufacturing efficiency of the LED chips 1110 is improved.

EXAMPLE III

The embodiment of the present application further provides an LED, as shown in fig. 9, including the LED chip 1110 in the second embodiment.

The LED chip 1110 is a core part of the LED1100, and determines photoelectric parameters such as brightness, forward voltage, and wavelength of the LED 1100. In this embodiment, the LED chip 1110 in the LED1100 is the LED chip 1110 in the second embodiment, and therefore, the LED1100 in this embodiment has the technical effects of the LED chip 1110 described in the second embodiment, and since the technical effects of the LED chip 1110 have been fully described in the second embodiment, details thereof are not repeated herein.

Example four

An embodiment of the present application further provides a display device, such as a schematic structural diagram of a display screen shown in fig. 10, including the LED1100 in the third embodiment.

In this embodiment, the LED1100 in the display device 1000 is the LED1100 in the third embodiment, so that the display device 1000 in this embodiment has the technical effect of the LED1100 described in the third embodiment, and since the technical effect of the LED1100 has been fully described in the third embodiment, no further description is given here. Moreover, the LED chip 1110 in the third embodiment is the LED chip 1110 in the second embodiment, so that the display device 1000 in this embodiment further has the technical effect of the LED chip 1110 described in the second embodiment, and since the technical effect of the LED chip 1110 has been fully described in the second embodiment, details are not repeated here.

In addition, when there are a plurality of LEDs 1100 in the display apparatus 1000, the plurality of LEDs 1100 include the LED chip 1110 in the second embodiment, and the LED chip 1110 in the second embodiment is cut from the LED wafer 100 in the first embodiment, so that the photoelectric parameters of the plurality of LEDs 1100 in the display apparatus 1000 have better consistency, so that the display apparatus 1000 has better quality.

Alternatively, the display device 1000 may be at least one of a display screen, a billboard, a signal light, an LED1100 light, or an indicator light, which is not limited herein.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications or substitutions do not depart from the scope of the invention in its corresponding aspects.

Claims (10)

1. An LED wafer, comprising:

a substrate;

the epitaxial wafers are arranged on the substrate at intervals, each epitaxial wafer comprises an n-type semiconductor layer, a quantum well layer and a p-type semiconductor layer, the n-type semiconductor layer is arranged on the substrate, the quantum well layer is arranged on the n-type semiconductor layer, the p-type semiconductor layer is arranged on the quantum well layer, an anode is arranged on the n-type semiconductor layer, and a cathode is arranged on the n-type semiconductor layer;

the plurality of coils and the plurality of epitaxial wafers are arranged in a one-to-one correspondence mode, each coil is electrically connected between the corresponding anode and the corresponding cathode, and the coils are used for generating current flowing from the anodes to the cathodes in a magnetic field.

2. The LED wafer of claim 1, wherein the coil comprises an anode connection portion, a cathode connection portion and a convolute portion electrically connected between the anode connection portion and the cathode connection portion, the anode connection portion being electrically connected to the anode, the cathode connection portion being electrically connected to the cathode, the convolute portion for generating the current in a magnetic field.

3. The LED wafer of claim 2, wherein the surface of the convolute portion is parallel to the surface of the substrate.

4. The LED wafer of claim 3, wherein the convolutions have a plurality of bent U-shaped metal lines connected in series to form an array of U-shaped metal lines having two free ends, one of the two free ends being electrically connected to the cathode connection portion and the other of the two free ends being electrically connected to the anode connection portion.

5. The LED wafer of claim 4, wherein the U-shaped metal lines comprise short sides and two long sides, the two long sides are arranged oppositely, the short sides are located between the two long sides, two ends of the short sides are respectively connected with two opposite ends of the two long sides, the U-shaped metal lines are arranged in an array along the extending direction of the short sides, and the distance between every two adjacent U-shaped metal lines is not equal to the length of the short sides.

6. The LED wafer of any one of claims 1-5, further comprising an insulating layer disposed on the n-type semiconductor layer and the p-type semiconductor layer and respectively avoiding the cathode and the anode, wherein the coil is located on a side of the insulating layer away from the substrate.

7. The LED wafer of any one of claims 1-5, wherein the coil is a copper wire coil;

and/or the presence of a gas in the gas,

the substrate is a sapphire substrate.

8. An LED chip, wherein the LED chip is formed by cutting the LED wafer according to any one of claims 1 to 7.

9. An LED comprising the LED chip of claim 8.

10. A display device characterized by comprising the LED of claim 9.

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