CN217469101U - Ridge waveguide structure and laser - Google Patents
Ridge waveguide structure and laser Download PDFInfo
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- CN217469101U CN217469101U CN202221608592.1U CN202221608592U CN217469101U CN 217469101 U CN217469101 U CN 217469101U CN 202221608592 U CN202221608592 U CN 202221608592U CN 217469101 U CN217469101 U CN 217469101U
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Abstract
The utility model relates to the field of semiconductor technology, a ridge waveguide structure and laser instrument is provided, this ridge waveguide structure includes: the waveguide structure comprises a first straight waveguide, an expansion straight waveguide, a second straight waveguide, a tapered waveguide and a third straight waveguide which are sequentially connected along a first direction; the first straight waveguide and the second straight waveguide are connected through the extended straight waveguide, and the dimension of the extended straight waveguide in the second direction is larger than the dimension of the first straight waveguide in the second direction and the dimension of the second straight waveguide in the second direction, so that light can be dispersed in the transmission process between the first straight waveguide and the second straight waveguide, and a high-order mode is more easily dispersed compared with a fundamental transverse mode, so that scattering loss occurs at the interfaces of the extended straight waveguide, the first straight waveguide and the second straight waveguide, the loss of the high-order mode is increased, and the high-order mode lasing is inhibited; in addition, because the propagation expansion of the fundamental transverse mode is small, the fundamental transverse mode is not influenced under the condition that the expanded straight waveguide is short, so that the fundamental transverse mode is not influenced, and the stability of the fundamental transverse mode is guaranteed.
Description
Technical Field
The utility model belongs to the technical field of the semiconductor technology and specifically relates to a ridge waveguide structure and laser instrument are related to.
Background
The laser has wide application in the fields of industrial manufacturing, laser radar, sensing, communication, aerospace and the like. Because of the advantage of easy extension of the cavity length of the edge-emitting laser, the edge-emitting laser is more suitable for manufacturing high-power lasers, and the semiconductor laser generally adopts an edge-emitting structure at present, namely, the light-emitting surface is the end surface of the waveguide and is parallel to the direction of the epitaxial layer.
However, under extremely high current density and power density, the stability of the existing single-mode laser is affected by nonlinear effect, and high-order mode is easy to lase, which causes instability of the single-mode laser.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a semiconductor laser and preparation method thereof to solve the problem that current single mode laser stability descends under high current density and power density.
In a first aspect, the present invention provides a ridge waveguide structure for confining and forming a laser transverse light field mode and guiding mode propagation in a laser, including: the waveguide structure comprises a first straight waveguide, an expansion straight waveguide, a second straight waveguide, a tapered waveguide and a third straight waveguide which are sequentially connected along a first direction;
the extended straight waveguide is arranged at one end close to the reflecting cavity surface of the laser, the size of the extended straight waveguide along the second direction is larger than the sizes of the first straight waveguide and the second straight waveguide along the second direction, and the size of the third straight waveguide along the second direction is larger than the size of the second straight waveguide along the second direction and smaller than the size of the extended straight waveguide along the second direction;
the first direction is the cavity length direction of the laser, and the second direction is the cavity width direction of the laser.
Optionally, the first straight waveguide and the third straight waveguide have equal dimensions in the second direction.
Optionally, the size of the extended straight waveguide along the second direction is greater than 5 μm, and the size of the extended straight waveguide along the first direction is 5 μm to 50 μm.
Optionally, the size of the first straight waveguide along the second direction is 3 μm to 10 μm, and the size of the first straight waveguide along the first direction is greater than 5 μm and less than 30% of the laser cavity length.
Optionally, the dimension of the second straight waveguide along the second direction is 1 μm to 5 μm, and the dimension of the second straight waveguide along the first direction accounts for 10% to 60% of the laser cavity length.
Optionally, the dimension of the third straight waveguide along the second direction is 3 μm to 10 μm, and the dimension of the third straight waveguide along the first direction accounts for 20% to 60% of the laser cavity length.
Optionally, an isolation groove is disposed in a region where the extended straight waveguide is located, and a size of the isolation groove in the second direction is larger than sizes of the first straight waveguide and the second straight waveguide in the second direction.
Optionally, the first straight waveguide, the extended straight waveguide, the second straight waveguide, the tapered waveguide, and the third straight waveguide each include a first semiconductor cladding layer and an ohmic contact layer that are stacked, and the isolation groove separates and extends the ohmic contact layer to the first semiconductor cladding layer.
Optionally, the first straight waveguide, the extended straight waveguide, the second straight waveguide, the tapered waveguide, and the third straight waveguide each include a first semiconductor waveguide layer, a first semiconductor cladding layer, and an ohmic contact layer, which are stacked, and the isolation trench isolates the ohmic contact layer and extends to the first semiconductor waveguide layer.
In a second aspect, embodiments of the present invention provide a laser including the ridge waveguide structure of the first aspect.
The embodiment of the utility model provides a following technological effect has at least:
the embodiment of the utility model provides a ridge waveguide structure connects first straight waveguide and second straight waveguide through extension straight waveguide, because extension straight waveguide is greater than first straight waveguide along the size of second direction and the size of second straight waveguide along the second direction along the size of first straight waveguide, therefore light can disperse at the in-process of transmission between first straight waveguide and the second straight waveguide, compare in basic transverse mode, the high order mode disperses more easily, thereby take place the scattering loss at the interface of extension straight waveguide and first straight waveguide, second straight waveguide, the loss of high order mode has been increased, thereby high order mode lasing has been suppressed; in addition, because the propagation expansion of the fundamental transverse mode is small, the fundamental transverse mode is not influenced under the condition that the expanded straight waveguide is short, so that the fundamental transverse mode is not influenced, and the stability of the fundamental transverse mode is guaranteed.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the technical solutions in the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a top view structural diagram of a ridge waveguide structure according to an embodiment of the present invention;
fig. 2 is a top view structural diagram of another ridge waveguide structure provided in the embodiment of the present invention;
fig. 3 is a schematic perspective view of a ridge waveguide structure according to an embodiment of the present invention;
fig. 4 is a schematic perspective view of another ridge waveguide structure according to an embodiment of the present invention.
Icon: 100-a first straight waveguide; 200-an extended straight waveguide; 210-an isolation trench; 300-a second straight waveguide; 400-a tapered waveguide; 500-a third straight waveguide; 600-ohmic contact layer; 700-a first semiconductor cladding; 800-first semiconductor waveguide layer.
Detailed Description
The technical solution of the present invention will be described clearly and completely with reference to the following embodiments, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
It will be understood by those within the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
As used herein, the singular forms "a", "an", "the" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes all or any element and all combinations of one or more of the associated listed items.
With reference to fig. 1 and 3, embodiments of the present invention provide a ridge waveguide structure for confining and forming a laser transverse optical field mode and guiding mode propagation in a laser, which includes a reflective facet (i.e., the HR facet illustrated in fig. 1) and a light exit facet (i.e., the AR facet illustrated in fig. 1). The ridge waveguide structure specifically includes: the waveguide structure comprises a first straight waveguide 100, an expansion straight waveguide 200, a second straight waveguide 300, a tapered waveguide 400 and a third straight waveguide 500 which are sequentially connected along a first direction.
Specifically, the extended straight waveguide 200 is disposed near one end of the reflecting cavity surface of the laser, the dimension d4 of the extended straight waveguide 200 in the second direction is greater than the dimension d1 of the first straight waveguide 100 in the second direction and is also greater than the dimension d2 of the second straight waveguide 300 in the second direction, and the dimension d3 of the third straight waveguide 500 in the second direction is greater than the dimension d2 of the second straight waveguide 300 in the second direction and is less than the dimension d4 of the extended straight waveguide 200 in the second direction.
In this embodiment, the second straight waveguide 300 and the third straight waveguide 500 are in transition connection through the tapered waveguide 400, so that the problem that the straight waveguide with an abrupt change in size causes an abrupt change corresponding to the abrupt change optical field mode and causes mode mismatch is avoided, thereby reducing mode loss and improving stability of optical field mode transmission.
It should be noted that the first direction is a cavity length direction of the laser (i.e., a direction parallel to the HR facet pointing to the AR facet), and the second direction is a cavity width direction of the laser (i.e., parallel to the AR facet or the HR facet). The dimension of each waveguide in the second direction may be considered as the width of the waveguide and the dimension of each waveguide in the first direction may be considered as the length of the waveguide.
In the ridge waveguide structure provided by the embodiment, the first straight waveguide 100 and the second straight waveguide 300 are connected by the extended straight waveguide 200, and since the dimension of the extended straight waveguide 200 in the second direction is greater than the dimension of the first straight waveguide 100 in the second direction and the dimension of the second straight waveguide 300 in the second direction, light can be dispersed in the transmission process between the first straight waveguide 100 and the second straight waveguide 300, and a high-order mode is more easily dispersed compared with a fundamental transverse mode, so that scattering loss occurs at interfaces of the extended straight waveguide 200 and the first and second straight waveguides 100 and 300, loss of the high-order mode is increased, and high-order mode lasing is suppressed; in addition, because the propagation expansion of the fundamental transverse mode is small, the fundamental transverse mode is not affected under the condition that the expanded straight waveguide 200 is short, so that the fundamental transverse mode is not affected, and the stability of the fundamental transverse mode is guaranteed.
In some embodiments, with continued reference to fig. 1, the dimension d1 of the first straight waveguide 100 in the second direction is equal to the dimension d3 of the third straight waveguide 500 in the second direction.
In this embodiment, the widths of the first straight waveguide 100 and the third straight waveguide 500 are set to be equal, which is beneficial to improving the transmission efficiency of laser and is also convenient for manufacturing the ridge waveguide.
Optionally, the dimension d4 of the extended straight waveguide 200 along the second direction is greater than 5 μm (μm represents a unit of micrometer in length), and the width of the extended straight waveguide 200 corresponds to the dimension of the entire laser along the second direction at most (i.e., the extended straight waveguide 200 extends to the edge of the laser).
Optionally, the extended straight waveguide 200 has a dimension in the first direction of 5 μm to 50 μm.
Optionally, the dimension d1 of the first straight waveguide 100 along the second direction is 3 μm to 10 μm, and the dimension of the first straight waveguide 100 along the first direction is greater than 5 μm and less than 30% of the laser cavity length.
Optionally, the dimension d2 of the second straight waveguide 300 along the second direction is 1 μm to 5 μm, and the dimension of the second straight waveguide 300 along the first direction accounts for 10% to 60% of the laser cavity length.
Optionally, the dimension d3 of the third straight waveguide 500 along the second direction is 3 μm to 10 μm, and the dimension of the third straight waveguide 500 along the first direction accounts for 20% to 60% of the laser cavity length.
In some embodiments, as shown in fig. 2, the region where the extended straight waveguide 200 is located is provided with an isolation groove 210, and the dimension of the isolation groove 210 in the second direction is larger than the dimensions of the first straight waveguide 100 and the second straight waveguide 300 in the second direction.
In this embodiment, the extended straight waveguide 200 is a non-current injection region, the current extension mainly comes from the ohmic contact layer 600 with strong conductivity on the epitaxial surface, and the ohmic contact layer 600 is etched away from the extended straight waveguide 200, so that the extension of the current to the cavity surface is reduced, and the reliability of the cavity surface is improved; meanwhile, the isolation groove 210 is arranged in the region where the extended straight waveguide 200 is located, which is beneficial to reducing the process difficulty.
Alternatively, as shown in fig. 3, each of the first straight waveguide 100, the extended straight waveguide 200, the second straight waveguide 300, the tapered waveguide 400, and the third straight waveguide 500 includes a first semiconductor cladding layer 700 and an ohmic contact layer 600, which are stacked, and the isolation trench 210 blocks and extends the ohmic contact layer 600 to the first semiconductor cladding layer 700.
Specifically, the ridge waveguide structure may be considered as a part of an epitaxial layer including a second semiconductor cladding layer (not shown), a second semiconductor waveguide layer (not shown), a quantum well layer (not shown), a first semiconductor waveguide layer 800, a first semiconductor cladding layer 700, and an ohmic contact layer 600 stacked on a substrate.
The ridge waveguide structure in this embodiment is obtained by patterning the first semiconductor cladding layer 700 and the ohmic contact layer 600, and the etched first semiconductor cladding layer 700 and the etched ohmic contact layer 600 form a ridge waveguide trench. The isolation trench 210 illustrated in fig. 3 isolates the ohmic contact layer 600, but does not extend through the entire extended straight waveguide 200. The groove bottom of the isolation groove 210 may be flush with the upper surface of the first semiconductor cladding 700, or may extend into the first semiconductor cladding 700, and the specific depth may be set according to the performance parameters of the laser.
Alternatively, as shown in fig. 4, each of the first straight waveguide 100, the extended straight waveguide 200, the second straight waveguide 300, the tapered waveguide 400, and the third straight waveguide 500 includes a first semiconductor waveguide layer 800, a first semiconductor cladding layer 700, and an ohmic contact layer 600, which are stacked, and the isolation trench 210 blocks and extends the ohmic contact layer 600 to the first semiconductor waveguide layer 800.
Specifically, the ridge waveguide structure in this embodiment is obtained by patterning the first semiconductor waveguide layer 800, the first semiconductor cladding layer 700, and the ohmic contact layer 600, and the etched first semiconductor cladding layer 700 and the etched ohmic contact layer 600 form a ridge waveguide trench. The isolation trench 210 illustrated in fig. 4 blocks the ohmic contact layer 600 and penetrates the entire extended straight waveguide 200 in the second direction. The trench bottom of the isolation trench 210 may be flush with the upper surface of the first semiconductor waveguide layer 800 (as shown in fig. 4) or may extend into the first semiconductor waveguide layer 800.
It should be noted that fig. 3 and 4 in the above embodiments only show a part of the epitaxial layer, and are mainly used for showing a specific film structure of the ridge waveguide structure.
Optionally, the first semiconductor waveguide layer 800 is a P-type waveguide layer, and the first semiconductor cladding 700 is a P-type cladding; the second semiconductor cladding layer is an N-type cladding layer, and the second semiconductor waveguide layer is an N-type waveguide layer.
Based on the same inventive concept, the embodiment of the present invention further provides a laser, including the foregoing ridge waveguide structure in the embodiment of the present invention.
It is understood that the laser comprises a substrate, an epitaxial layer and a conductive functional layer, and the ridge waveguide structure is obtained by patterning the epitaxial layer and belongs to a part of the epitaxial layer.
The laser provided by this embodiment includes the ridge waveguide structure in the foregoing embodiments, where the extension straight waveguide included in the ridge waveguide structure connects the first straight waveguide and the second straight waveguide, and since the size of the extension straight waveguide in the second direction is greater than the size of the first straight waveguide in the second direction and the size of the second straight waveguide in the second direction, light diverges during transmission between the first straight waveguide and the second straight waveguide, and a high-order mode diverges more easily than a fundamental transverse mode, so that scattering loss occurs at interfaces between the extension straight waveguide and the first and second straight waveguides, and loss of the high-order mode is increased, thereby suppressing high-order mode lasing; in addition, because the propagation expansion of the fundamental transverse mode is small, the fundamental transverse mode is not influenced under the condition that the expanded straight waveguide is short, so that the fundamental transverse mode is not influenced, and the stability of the fundamental transverse mode is guaranteed.
Those skilled in the art will appreciate that the various operations, methods, steps, measures, and arrangements of steps in the processes, methods, and arrangements of steps in the invention that have been discussed can be interchanged, modified, combined, or eliminated. Further, other steps, measures, or schemes in various operations, methods, or flows that have been discussed in this disclosure can be alternated, altered, rearranged, broken down, combined, or deleted. Further, steps, measures, schemes in the prior art having various operations, methods, procedures disclosed in the present invention may also be alternated, modified, rearranged, decomposed, combined, or deleted.
In the description of the present invention, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are merely for convenience of description and simplicity of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, are not to be construed as limiting the present invention.
The terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in a specific situation by those skilled in the art.
In the description herein, particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention.
Claims (10)
1. A ridge waveguide structure for confining and forming a transverse optical field mode of laser light and guiding mode propagation in a laser, comprising: the waveguide structure comprises a first straight waveguide, an expansion straight waveguide, a second straight waveguide, a tapered waveguide and a third straight waveguide which are sequentially connected along a first direction;
the extended straight waveguide is arranged at one end close to the reflecting cavity surface of the laser, the size of the extended straight waveguide along the second direction is larger than the sizes of the first straight waveguide and the second straight waveguide along the second direction, and the size of the third straight waveguide along the second direction is larger than the size of the second straight waveguide along the second direction and smaller than the size of the extended straight waveguide along the second direction;
the first direction is the cavity length direction of the laser, and the second direction is the cavity width direction of the laser.
2. The ridge waveguide structure of claim 1 wherein the first straight waveguide and the third straight waveguide are equal in size in the second direction.
3. The ridge waveguide structure of claim 1 or 2, wherein the dimension of the extended straight waveguide along the second direction is greater than 5 μm, and the dimension of the extended straight waveguide along the first direction is 5 μm to 50 μm.
4. The ridge waveguide structure of claim 1 or 2, wherein the first straight waveguide has a dimension in the second direction of 3 μm to 10 μm, and the first straight waveguide has a dimension in the first direction of more than 5 μm and less than 30% of the laser cavity length.
5. The ridge waveguide structure of claim 1 or 2, wherein the dimension of the second straight waveguide along the second direction is 1-5 μm, and the dimension of the second straight waveguide along the first direction accounts for 10-60% of the laser cavity length.
6. The ridge waveguide structure of claim 1 or 2, wherein the dimension of the third straight waveguide along the second direction is 3 μm to 10 μm, and the dimension of the third straight waveguide along the first direction accounts for 20% to 60% of the laser cavity length.
7. The ridge waveguide structure of claim 1, wherein the region where the extended straight waveguide is located is provided with an isolation groove, and the dimension of the isolation groove in the second direction is larger than the dimensions of the first straight waveguide and the second straight waveguide in the second direction.
8. The ridge waveguide structure of claim 7, wherein the first straight waveguide, the extended straight waveguide, the second straight waveguide, the tapered waveguide, and the third straight waveguide each comprise a first semiconductor cladding layer and an ohmic contact layer arranged in a stack, and the isolation trench isolates and extends to the first semiconductor cladding layer.
9. The ridge waveguide structure of claim 7, wherein the first straight waveguide, the extended straight waveguide, the second straight waveguide, the tapered waveguide, and the third straight waveguide each comprise a first semiconductor waveguide layer, a first semiconductor cladding layer, and an ohmic contact layer arranged in a stack, and the isolation trench separates and extends the ohmic contact layer to the first semiconductor waveguide layer.
10. A laser comprising a ridge waveguide structure as claimed in any one of claims 1 to 9.
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| CN202221608592.1U CN217469101U (en) | 2022-06-24 | 2022-06-24 | Ridge waveguide structure and laser |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023245908A1 (en) * | 2022-06-24 | 2023-12-28 | 度亘激光技术（苏州）有限公司 | Semiconductor laser and preparation method therefor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023245908A1 (en) * | 2022-06-24 | 2023-12-28 | 度亘激光技术（苏州）有限公司 | Semiconductor laser and preparation method therefor |
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