CN217468346U - Silicon wafer diffusion furnace tube device and battery manufacturing equipment - Google Patents

Abstract

The utility model relates to a silicon chip diffusion boiler tube device and battery manufacture equipment. The silicon wafer diffusion furnace tube device comprises: the furnace tube body is provided with a cavity, and the cavity is used for processing silicon wafers; the intake pipe is at least two, the interval is provided with more than two air inlets in the intake pipe, the intake pipe pass through the air inlet with the cavity intercommunication, the relative both ends of intake pipe be used for to cavity lets in gas. Because the number of the gas inlet pipes is at least two, each gas inlet can provide gas for the nearest silicon wafer, and therefore gas can be introduced into the two opposite ends of each silicon wafer. Meanwhile, the number of the outlet pipes is at least two, so that the gas in the cavity is uniformly distributed, the contact uniformity of the silicon wafer and the gas is improved, the production uniformity of the silicon wafer is ensured, the difference of transverse resistance is reduced, the production quality and the yield of the silicon wafer are improved, the use amount of the gas is reduced, and the manufacturing cost is reduced.

Description

Silicon wafer diffusion furnace tube device and battery manufacturing equipment

Technical Field

The utility model relates to a battery piece production facility technical field especially relates to a silicon chip diffusion boiler tube device and battery manufacture equipment.

Background

Currently, the N-type crystalline silicon solar energy high-efficiency battery technology (Topcon, HJT) in the industry is mature day by day and the scale is gradually enlarged, which brings great pressure to the currently mainstream P-type PERC battery, mainly the pressure on the battery efficiency. The P-type PERC battery is limited by the disadvantage that P-type silicon is inferior to N-type silicon, and the technical route of the back passivation battery is added, so that the upper limit of the efficiency of the battery is limited, on the premise, the efficiency of the P-type PERC battery is continuously improved, the refinement is required in the process of the process, the technical details of each link are continuously optimized, the efficiency of the battery is further improved, and the competitiveness of the P-type PERC battery is improved.

In the traditional technology, the low-pressure diffusion technology is adopted, the distance between clamping grooves of a quartz boat for bearing a silicon wafer is smaller and smaller, even in a low-pressure environment, the difficulty of gas molecules moving to the surface of the silicon wafer is increased, the uniformity of the silicon wafer in the wafer is influenced, the difference of the amount of phosphorus sources acting on the silicon wafer in the quartz furnace tube and the difference of the air flow direction can be caused by the gas inlet (phosphorus source, oxygen and nitrogen) and gas outlet system (waste gas) of the furnace tube, and the square resistance difference of the upper area and the lower area of the silicon wafer is larger.

SUMMERY OF THE UTILITY MODEL

Therefore, it is necessary to overcome the defects of the prior art, and provide a silicon wafer diffusion furnace tube device and a battery manufacturing apparatus, which can effectively improve the production quality of silicon wafers and reduce the manufacturing cost.

The technical scheme is as follows: a silicon wafer diffusion furnace tube device comprises: the furnace tube body is provided with a cavity, and the cavity is used for processing silicon wafers; the gas inlet pipes are arranged on two opposite sides of the cavity along a first direction respectively, more than two gas inlets are arranged on the gas inlet pipes at intervals, the gas inlet pipes are communicated with the cavity through the gas inlets, and two opposite ends of the gas inlet pipes are used for introducing gas into the cavity respectively; the outlet duct, the outlet duct is at least two, two the outlet duct along the second direction set up respectively in the relative both sides of cavity, just first direction with the second direction is the contained angle setting, the interval is provided with two gas outlets on the outlet duct, the outlet duct passes through the gas outlet with the cavity intercommunication.

In the working process of the silicon wafer diffusion furnace tube device, firstly, a silicon wafer is placed in a cavity; then, introducing source gases such as small nitrogen, large nitrogen, oxygen and the like and auxiliary gases through the gas inlet pipe, discharging waste gas through a gas outlet on the gas outlet pipe, completing a thermal diffusion process on the silicon wafer in the furnace tube body, and preparing and forming a PN junction of the solar cell in a thermal environment. Because the intake pipe is two at least, and two intake pipes set up respectively in the relative both sides of cavity to be equipped with more than two air inlets in the intake pipe, every air inlet can provide gas to the nearest silicon chip, consequently can let in gas to the relative both ends of each silicon chip. Meanwhile, the number of the air outlet pipes is at least two, and the two air outlet pipes are respectively arranged on two opposite sides of the silicon wafer, so that the uniform distribution of air in the cavity is facilitated, the contact uniformity of the silicon wafer and the air is improved, the production uniformity of the silicon wafer is further ensured, the difference of transverse resistance is reduced, the production quality and yield of the silicon wafer are improved, the use amount of the air is reduced, and the manufacturing cost is further reduced.

In one embodiment, the first direction is perpendicular to the second direction, the first direction is parallel to the height direction of the furnace tube body, and the second direction is parallel to the width direction of the furnace tube body.

In one embodiment, the furnace tube body is provided with a furnace opening and a furnace tail at two opposite ends, the two opposite ends of the gas inlet tube respectively extend out of the furnace opening and the furnace tail, and the two opposite ends of the gas inlet tube are respectively used for introducing gas.

In one embodiment, the air inlet pipe further comprises a branch pipe, one end of the branch pipe is located outside the cavity, the other end of the branch pipe is communicated with the air inlet pipe inside the cavity, and the branch pipe is used for introducing air into the air inlet pipe.

In one embodiment, the air inlet pipe includes a first branch pipe, a second branch pipe and a third branch pipe which are not communicated with each other, the second air pipe is provided with a connection port, one end of the branch pipe is communicated with the second air pipe through the connection port, and the first branch pipe, the second air pipe and the third branch pipe are all provided with the air inlet.

In one embodiment, the air outlet pipe is provided with a fourth branched pipe, a fifth branched pipe and a sixth branched pipe which are not communicated with each other, the fourth branched pipe, the fifth branched pipe and the sixth branched pipe are adjacently arranged in the cavity, the air outlet pipe is respectively communicated with the fourth branched pipe, the fifth branched pipe and the sixth branched pipe, and the fourth branched pipe, the fifth branched pipe and the sixth branched pipe are respectively provided with the air outlets.

In one embodiment, the silicon wafer diffusion device further comprises a branch mechanism, the branch mechanism is communicated with the air inlet, more than two air inlet nozzles are arranged on the branch mechanism, the more than two air inlet nozzles are arranged on the branch mechanism at intervals along the first direction, and the air inlet nozzles are used for introducing air into the cavity.

In one embodiment, the branch mechanism includes a horizontal pipe and a vertical pipe, the horizontal pipe is communicated with the air inlet pipe through the vertical pipe, the horizontal pipe extends along the second direction, the vertical pipe extends along the first direction, and the air tap is arranged on the horizontal pipe.

In one embodiment, the diameter of the air inlet nozzle is gradually increased from the transverse pipe along the height direction of the furnace tube body, so that the air inlet nozzle is in a horn shape.

In one embodiment, the number of the branch mechanisms is two or more, the two or more branch mechanisms are respectively communicated with the air inlets on the two air inlet pipes, and the branch mechanisms and the air inlets are arranged in a one-to-one correspondence manner.

A battery manufacturing apparatus comprising the silicon wafer diffusion furnace tube device of any one of the above.

In the working process of the battery manufacturing equipment, firstly, a silicon wafer is placed in the cavity; then, introducing source gases such as small nitrogen, large nitrogen, oxygen and the like and auxiliary gases through the gas inlet pipe, discharging waste gas through a gas outlet on the gas outlet pipe, completing a thermal diffusion process on the silicon wafer in the furnace tube body, and preparing and forming a PN junction of the solar cell in a thermal environment. Because the intake pipe is two at least, and two intake pipes set up respectively in the relative both sides of cavity to be equipped with more than two air inlets in the intake pipe, every air inlet can provide gas to the nearest silicon chip, consequently can let in gas to the relative both ends of each silicon chip. Meanwhile, the number of the outlet pipes is at least two, and the two outlet pipes are respectively arranged on two opposite sides of the silicon wafer, so that the gas in the cavity is uniformly distributed, the contact uniformity of the silicon wafer and the gas is improved, the production uniformity of the silicon wafer is ensured, the difference of transverse resistance is reduced, the production quality and the yield of the silicon wafer are improved, the use amount of the gas is reduced, and the manufacturing cost is reduced.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this application, are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification.

In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.

FIG. 1 is a first schematic structural diagram of a silicon wafer diffusion furnace apparatus according to an embodiment;

FIG. 2 is a second schematic structural diagram of the silicon wafer diffusion furnace apparatus according to an embodiment;

fig. 3 is a third schematic structural diagram of the silicon wafer diffusion furnace tube device in one embodiment.

Description of reference numerals:

100. a silicon wafer diffusion furnace tube device; 110. a furnace tube body; 111. a cavity; 112. a furnace mouth; 113. a furnace tail; 120. an air inlet pipe; 121. an air inlet; 122. a branch pipe; 123. a connecting port; 124. a first branch pipe; 125. A second branch pipe; 126. thirdly, pipe distribution; 127. a fourth branch pipe; 130. an air outlet pipe; 131. an air outlet; 132. A fourth branch pipe; 133. fifth pipe distribution; 134. sixth branch pipe; 140. a branch mechanism; 141. an air inlet nozzle; 142. a transverse tube; 143. a vertical tube; 200. and (3) a silicon wafer.

Detailed Description

In order to make the above objects, features and advantages of the present invention more comprehensible, embodiments of the present invention are described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein, as those skilled in the art will be able to make similar modifications without departing from the spirit and scope of the present invention.

In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", and the like, indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.

In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," and "fixed" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.

In the present application, unless expressly stated or limited otherwise, a first feature "on" or "under" a second feature may be directly contacting the second feature or the first and second features may be indirectly contacting the second feature through intervening media. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.

It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like as used herein are for illustrative purposes only and do not denote a unique embodiment.

Referring to fig. 1, fig. 2 and fig. 3, fig. 1 is a schematic structural diagram of a silicon wafer diffusion furnace tube device 100 according to an embodiment of the present invention; fig. 2 shows a second schematic structural diagram of the silicon wafer diffusion furnace tube apparatus 100 according to an embodiment of the present invention; fig. 3 shows a third schematic structural diagram of the silicon wafer diffusion furnace tube device 100 in an embodiment of the present invention, an embodiment of the present invention provides a silicon wafer diffusion furnace tube device 100, including: furnace tube body 110, inlet tube 120 and outlet tube 130. The furnace tube body 110 is provided with a cavity 111, and the cavity 111 is used for processing the silicon wafer 200; the number of the air inlet pipes 120 is at least two, and the two air inlet pipes 120 are respectively disposed on two opposite sides of the cavity 111 along the first direction. More than two air inlets 121 are arranged on the air inlet pipe 120 at intervals, the air inlet pipe 120 is communicated with the cavity 111 through the air inlets 121, and two opposite ends of the air inlet pipe 120 are respectively used for introducing air into the cavity 111. The number of the outlet pipes 130 is at least two, the two outlet pipes 130 are respectively arranged on two opposite sides of the cavity 111 along the second direction, and the first direction and the second direction form an included angle. Two air outlets 131 are arranged on the air outlet pipe 130 at intervals, and the air outlet pipe 130 is communicated with the cavity 111 through the air outlets 131.

In the above silicon wafer diffusion furnace tube device 100, during the working process, firstly, the silicon wafer 200 is placed in the cavity 111; then, the source gas and the auxiliary gas such as small nitrogen, large nitrogen, oxygen, etc. are introduced through the gas inlet pipe 120, the waste gas is discharged through the gas outlet 131 on the gas outlet pipe 130, the silicon wafer 200 completes the thermal diffusion process in the furnace tube body 110, and the PN junction of the solar cell is prepared and formed in the thermal environment. Because the number of the gas inlet pipes 120 is at least two, the two gas inlet pipes 120 are respectively arranged on two opposite sides of the cavity 111, and the gas inlet pipe 120 is provided with more than two gas inlets 121, each gas inlet 121 can provide gas for the closest silicon wafer 200, and therefore gas can be introduced into two opposite ends of each silicon wafer 200. Meanwhile, the number of the outlet pipes 130 is at least two, and the two outlet pipes 130 are respectively arranged on two opposite sides of the silicon wafer 200, so that the gas in the cavity 111 is uniformly distributed, the contact uniformity of the silicon wafer 200 and the gas is improved, the production uniformity of the silicon wafer 200 is further ensured, the difference of transverse resistance is reduced, the production quality and the yield of the silicon wafer 200 are improved, the use amount of the gas is reduced, and the manufacturing cost is further reduced.

Wherein, the included angle between the first direction and the second direction can be 10-350 degrees.

In one embodiment, referring to fig. 2, the first direction is perpendicular to the second direction, the first direction is parallel to the height direction of the furnace tube body 110, and the second direction is parallel to the width direction of the furnace tube body 110. Therefore, the gas inlet and the gas outlet in the furnace tube body 110 are more uniform, and the uniformity of the PN junction is improved.

In order to further understand and explain the height direction of the furnace tube body 110 and the width direction of the furnace tube body 110, taking fig. 2 as an example, the height direction of the furnace tube body 110 is the straight line S in fig. 2 ₁ The width direction of the furnace tube body 110 is the straight line S in FIG. 2 ₂ In the direction indicated by any of the above arrows.

In one embodiment, referring to fig. 1, the furnace tube body 110 has a furnace opening 112 and a furnace tail 113 at opposite ends, the gas inlet tube 120 has opposite ends respectively extending out of the furnace opening 112 and the furnace tail 113, and the opposite ends of the gas inlet tube 120 are respectively used for introducing gas. Therefore, the uniformity of the gas outlet of the gas inlet 121 in the gas inlet pipe 120 to the silicon wafer 200 in the cavity 111 can be improved, the difference of the gas outlet time, speed and concentration caused by overlong cavity 111 can be avoided, and the improvement of the production efficiency of the silicon wafer 200 is facilitated.

In one embodiment, referring to FIG. 1, the intake conduit 120 further includes a branch conduit 122. One end of the branch pipe 122 is located outside the cavity 111, the other end of the branch pipe 122 is communicated with the gas inlet pipe 120 inside the cavity 111, and the branch pipe 122 is used for introducing gas into the gas inlet pipe 120. So, directly let in gas to the inside of intake pipe 120 through branch pipe 122, be favorable to improving the rate and the concentration of giving vent to anger in intake pipe 120 middle section, avoid both ends to ventilate the back, intake pipe 120 middle section does not in time provide gas to silicon chip 200, leads to the silicon chip 200PN junction at cavity 111 middle part to process inhomogeneous, thereby improve production quality.

Specifically, referring to fig. 1, the air inlet pipe 120 includes a first branch pipe 124, a second air pipe 125 and a third branch pipe 126 that are not communicated with each other, and the second branch pipe 125 is provided with a connection port 123. One end of the branch pipe 122 is communicated with the second branch pipe 125 through a connection port 123, and the first branch pipe 124, the second branch pipe 125 and the third branch pipe 126 are all provided with air inlets. Therefore, the gas supply device independently provides gas for the first branch pipe 124, the second branch pipe 125 and the third branch pipe 126 respectively, so that the gas outlet of the gas inlet 121 in the cavity 111 is more uniform and synchronous, the time difference and the concentration difference of the contact between all the silicon wafers from the furnace opening 112 to the furnace tail 113 and the gas are reduced, the uniformity of the gas supply of the gas inlet pipe 120 to the cavity 111 is improved, the yield and the productivity of the silicon wafers are improved, and the processing uniformity of the silicon wafers 200 is improved. Of course, the gas inlet pipe 120 is further divided into four, five, six, etc. sections that are not connected to each other according to the length of the furnace tube body 110 and the requirement of the gas inlet rate.

In one embodiment, referring to fig. 3, the outlet pipe is provided with a fourth branched pipe 132, a fifth branched pipe 133 and a sixth branched pipe 134 which are not communicated with each other. The fourth branched pipe 132, the fifth branched pipe 133 and the sixth branched pipe 134 are adjacently arranged in the cavity 111, the air outlet pipe 130 is respectively communicated with the fourth branched pipe 132, the fifth branched pipe 133 and the sixth branched pipe 134, and the fourth branched pipe 132, the fifth branched pipe 133 and the sixth branched pipe 134 are respectively provided with an air outlet 131. So, separate the air current stability when giving vent to anger the mode can improve waste gas discharge, avoid the gas disorder in outlet duct 130, and then guarantee the even of the inside gas of cavity 111, improve the production quality.

In one embodiment, referring to fig. 2, the silicon wafer 200 diffusion apparatus further comprises a branch mechanism 140. The branch mechanism 140 is communicated with the air inlet 121, the branch mechanism 140 is provided with more than two air inlet nozzles 141, the more than two air inlet nozzles 141 are arranged on the branch mechanism 140 at intervals along the first direction, and the air inlet nozzles 141 are used for introducing air into the cavity 111. Thus, the gas is branched into the cavity 111 through the branch mechanism 140, so that the coverage area and uniformity of the gas to the silicon wafer 200 can be improved, the reaction gas is provided at a larger position of the silicon wafer 200, the utilization rate of the source gas and the auxiliary gas is further improved, the resistance difference of different regions of the silicon wafer 200 caused by the difference of the gas flow directions is avoided, and the production quality of the silicon wafer 200 is further improved.

In one embodiment, referring to fig. 2, the leg mechanism includes a horizontal tube 142 and a vertical tube 143. The horizontal tube 142 is communicated with the air inlet tube 120 through a vertical tube 143, the horizontal tube 142 extends along the second direction, the vertical tube 143 extends along the first direction, and the air nozzle is arranged on the horizontal tube 142. Therefore, the gas in the gas inlet pipe 120 can be closer to the silicon wafer 200, the contact uniformity of the silicon wafer 200 and the gas is improved, and the production quality of the silicon wafer 200 is improved.

In one embodiment, referring to fig. 1 and 2, the diameter of the air inlet nozzle 141 gradually increases from the horizontal tube 142 along the height direction of the furnace tube body 110, so that the air inlet nozzle 141 is flared. Thus, when the gas enters the cavity 111 from the gas inlet nozzle 141, the gas can be radially emitted, so that the coverage area of the gas on the silicon wafer 200 is increased, the difference is reduced, and the production uniformity and the production quality of the silicon wafer 200 are improved.

In one embodiment, referring to fig. 1 and fig. 2, there are more than two branch mechanisms 140, the more than two branch mechanisms 140 are respectively communicated with the air inlets 121 of the two air inlet pipes 120, and the branch mechanisms 140 and the air inlets 121 are disposed in a one-to-one correspondence. Therefore, the silicon wafer 200 from the furnace mouth 112 to the furnace tail 113 can be processed and manufactured uniformly, so that the manufacturing difference is reduced, the production quality of the silicon wafer 200 is improved, the yield is improved, and the production cost is reduced.

In one embodiment, referring to fig. 1, fig. 2 and fig. 3, a battery manufacturing apparatus includes any one of the above silicon wafer diffusion furnace tube devices 100.

In the working process of the battery manufacturing equipment, firstly, a silicon wafer 200 is placed in a cavity 111; then, the source gas and the auxiliary gas such as small nitrogen, large nitrogen, oxygen, etc. are introduced through the gas inlet pipe 120, the waste gas is discharged through the gas outlet 131 on the gas outlet pipe 130, the silicon wafer 200 completes the thermal diffusion process in the furnace tube body 110, and the PN junction of the solar cell is prepared and formed in the thermal environment. Because the number of the gas inlet pipes 120 is at least two, the two gas inlet pipes 120 are respectively arranged on two opposite sides of the cavity 111, and the gas inlet pipe 120 is provided with more than two gas inlets 121, each gas inlet 121 can provide gas for the closest silicon wafer 200, and therefore gas can be introduced into two opposite ends of each silicon wafer 200. Meanwhile, the number of the outlet pipes 130 is at least two, and the two outlet pipes 130 are respectively arranged on two opposite sides of the silicon wafer 200, so that the gas in the cavity 111 is uniformly distributed, the contact uniformity of the silicon wafer 200 and the gas is improved, the production uniformity of the silicon wafer 200 is further ensured, the difference of transverse resistance is reduced, the production quality and the yield of the silicon wafer 200 are improved, the use amount of the gas is reduced, and the manufacturing cost is further reduced.

The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.

The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.

Claims (10)

1. The silicon wafer diffusion furnace tube device is characterized by comprising:

the furnace tube body is provided with a cavity, and the cavity is used for processing silicon wafers;

the gas inlet pipes are arranged on two opposite sides of the cavity along a first direction respectively, more than two gas inlets are arranged on the gas inlet pipes at intervals, the gas inlet pipes are communicated with the cavity through the gas inlets, and two opposite ends of the gas inlet pipes are used for introducing gas into the cavity respectively;

the outlet duct, the outlet duct is at least two, two the outlet duct along the second direction set up respectively in the relative both sides of cavity, just first direction with the second direction is the contained angle setting, the interval is provided with two gas outlets on the outlet duct, the outlet duct passes through the gas outlet with the cavity intercommunication.

2. The silicon wafer diffusion furnace tube device of claim 1, wherein the first direction is perpendicular to the second direction, the first direction is parallel to a height direction of the furnace tube body, and the second direction is parallel to a width direction of the furnace tube body.

3. The silicon wafer diffusion furnace tube device of claim 1, wherein the furnace tube body is provided with a furnace opening and a furnace tail at two opposite ends, the gas inlet tube extends out of the furnace opening and the furnace tail at two opposite ends, and the gas inlet tube is used for introducing gas at two opposite ends.

4. The silicon wafer diffusion furnace tube device of claim 1, wherein the gas inlet tube further comprises a branch tube, one end of the branch tube is located outside the cavity, the other end of the branch tube is communicated with the gas inlet tube inside the cavity, and the branch tube is used for introducing gas into the gas inlet tube.

5. The silicon wafer diffusion furnace tube device of claim 4, wherein the gas inlet tube comprises a first branch tube, a second branch tube and a third branch tube which are not communicated with each other, the second branch tube is provided with a connecting port, one end of the branch tube is communicated with the second branch tube through the connecting port, and the first branch tube, the second branch tube and the third branch tube are provided with the gas inlets; and/or the presence of a gas in the gas,

the air outlet pipe is provided with a fourth branched pipe, a fifth branched pipe and a sixth branched pipe which are not communicated with each other, the fourth branched pipe, the fifth branched pipe and the sixth branched pipe are adjacently arranged in the cavity, the air outlet pipe is respectively communicated with the fourth branched pipe, the fifth branched pipe and the sixth branched pipe, and the fourth branched pipe, the fifth branched pipe and the sixth branched pipe are respectively provided with the air outlet.

6. The silicon wafer diffusion furnace tube device of claim 1, further comprising a branch mechanism, wherein the branch mechanism is communicated with the gas inlet, the branch mechanism is provided with more than two gas inlet nozzles, the more than two gas inlet nozzles are arranged on the branch mechanism at intervals along the first direction, and the gas inlet nozzles are used for introducing gas into the cavity.

7. The wafer diffusion furnace tube apparatus of claim 6, wherein the branch mechanism comprises a horizontal tube and a vertical tube, the horizontal tube is communicated with the inlet tube through the vertical tube, the horizontal tube extends along the second direction, the vertical tube extends along the first direction, and the gas nozzle is disposed on the horizontal tube.

8. The silicon wafer diffusion furnace tube device according to claim 7, wherein the diameter of the gas inlet nozzle is gradually increased from the transverse tube along the height direction of the furnace tube body, so that the gas inlet nozzle is trumpet-shaped.

9. The silicon wafer diffusion furnace tube device according to claim 6, wherein the number of the branch mechanisms is two or more, the two or more branch mechanisms are respectively communicated with the gas inlets of the two gas inlet tubes, and the branch mechanisms and the gas inlets are arranged in a one-to-one correspondence manner.

10. A battery manufacturing apparatus, characterized in that the battery manufacturing apparatus comprises the silicon wafer diffusion furnace tube device according to any one of claims 1 to 9.

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