CN217425279U

CN217425279U - MEMS semiconductor gas sensor

Info

Publication number: CN217425279U
Application number: CN202221271104.2U
Authority: CN
Inventors: 孙凯; 王俊花; 郭亮; 宋立景; 孟维琦
Original assignee: Shandong Qianneng Technology Innovation Co ltd
Current assignee: Shandong Qianneng Technology Innovation Co ltd
Priority date: 2022-05-25
Filing date: 2022-05-25
Publication date: 2022-09-13
Anticipated expiration: 2032-05-25

Abstract

The utility model discloses a MEMS semiconductor gas sensor, which relates to the technical field of sensors and comprises a monocrystalline silicon substrate, a lower supporting layer, a heating electrode, an insulating layer and a sensitive electrode, wherein the outside of the monocrystalline silicon substrate, the lower supporting layer, the heating electrode, the insulating layer and the sensitive electrode is provided with a protective structure, in the utility model, the monocrystalline silicon substrate, the lower supporting layer, the heating electrode, the insulating layer and the sensitive electrode are protected by arranging the lower shell and the upper shell, the butt joint of the lower shell and the upper shell is convenient by arranging a supporting rod and a fixed seat, a certain gap is ensured between the lower shell and the upper shell, gas detection is convenient, the inserted rod is far away from the supporting rod by a limiting block, the supporting rod is conveniently fixed in the fixed seat by arranging and utilizing the elastic reset principle of a tension spring, and the stability of the upper shell after being arranged on the lower shell is ensured, and then the monocrystalline silicon substrate, the lower supporting layer, the heating electrode, the insulating layer and the sensitive electrode are installed and maintained.

Description

MEMS semiconductor gas sensor

Technical Field

The utility model relates to a sensor technical field especially relates to a MEMS semiconductor gas sensor.

Background

The MEMS sensor, namely the micro-electro-mechanical system, is the leading-edge research field of multidisciplinary intersection developed on the basis of microelectronic technology, compared with the traditional sensor, the MEMS sensor has the characteristics of small volume, light weight, low cost, low power consumption, high reliability, suitability for mass production, easy integration and realization of intellectualization, along with the rapid development of the MEMS technology, the gas sensor is also developed towards the direction of microminiaturization, intellectualization, integration and low power consumption, and the microstructure gas sensor manufactured by adopting the MEMS technology integrates a heating element and a sensitive element into a whole, so that the sensitivity, reliability and consistency of the gas sensor can be greatly improved.

A prior patent (publication number CN215415161U) discloses a MEMS semiconductor gas sensor, which comprises a substrate layer, a support layer, a first dielectric layer and a second dielectric layer in sequence from bottom to top; a temperature sensor is arranged between the supporting layer and the first dielectric layer, and a micro-heat source is arranged between the first dielectric layer and the second dielectric layer; the second dielectric layer is provided with a sensing electrode, a gas sensitive film covers the sensing electrode, the integral structure is high in integration level, low in cost, low in power consumption and high in temperature control precision, and the selectivity of gas is improved through high-precision temperature control; high-sensitivity detection of different gases is realized through accurate temperature adjustment and application of gold interdigital electrodes; the power consumption is reduced to the maximum extent by the hollow part structure and the accurate control of the temperature.

This MEMS semiconductor gas sensor, the outside lacks effectual protection architecture, however MEMS semiconductor gas sensor's volume is less, the precision is higher, the eminence drops the problem that easily appears the damage, and when it does not use, expose in external environment for a long time, the damage problem that easily appears causing because of external factor, easily by the dust, the problem that leads to the short circuit is invaded to sewage or splash, service life is shortened, the inconvenient installation of its shell of current MEMS semiconductor gas sensor who has protection architecture and dismantlement simultaneously, and then there is inconvenient problem of maintenance.

Therefore, it is necessary to provide a MEMS semiconductor gas sensor to solve the above technical problems.

SUMMERY OF THE UTILITY MODEL

The utility model provides a MEMS semiconductor gas sensor has solved the outside MEMS semiconductor gas sensor that lacks effectual protection architecture and has protection architecture's MEMS semiconductor gas sensor's the inconvenient installation of its shell and dismantlement and have the technical problem of inconvenient maintenance of current MEMS semiconductor gas sensor.

In order to solve the technical problem, the utility model provides a pair of MEMS semiconductor gas sensor, including monocrystalline silicon substrate, lower supporting layer, heating electrode, insulating layer and sensitive electrode, monocrystalline silicon substrate, lower supporting layer, heating electrode, insulating layer and sensitive electrode's outside is provided with protective structure, protective structure includes casing, last casing, bracing piece and fixing base down.

Preferably, the protection structure further comprises an insertion rod, a limiting block and an extension spring, the lower shell is connected with the bottom of the monocrystalline silicon substrate, the supporting rod is connected with the inner wall of the upper shell, the fixing seat is connected with the inner wall of the lower shell, the insertion rod is inserted into the lower shell and the fixing seat, the outer wall of the supporting rod is provided with a slot matched with the insertion rod, the limiting block is connected with one end of the insertion rod, which is far away from the supporting rod, the extension spring is arranged between the lower shell and the limiting block, the top of the fixing seat is provided with a positioning slot matched with the supporting rod, the monocrystalline silicon substrate, the lower supporting layer, the heating electrode, the insulating layer and the sensitive electrode are protected by arranging the lower shell and the upper shell, the problem of collision damage is avoided, the lower shell and the upper shell are conveniently butted by arranging the supporting rod and the fixing seat, and a certain gap is ensured to exist between the lower shell and the upper shell, the convenient gaseous of detection, relevant personnel keep away from the bracing piece with the inserted bar through the stopper, through setting up and utilizing extension spring's elasticity principle that resets to conveniently fix the bracing piece in the fixing base, ensured the stability of last casing installation back on the casing down, and then installation and maintenance monocrystalline silicon substrate, lower supporting layer, heating electrode, insulating layer and sensitive electrode.

Preferably, the quantity of bracing piece and fixing base is four, through setting up four bracing pieces and fixing base, supports the casing multiple spot under to last casing on the casing, has ensured the stability of last casing after with the casing butt joint down.

Preferably, the guide bar is installed to the interior diapire of constant head tank, the guide way with guide bar looks adaptation is seted up to the bottom of bracing piece, through setting up guide bar and guide way, when pegging graft bracing piece and fixing base, spacing and direction have further promoted the stability of bracing piece in the fixing base simultaneously.

Preferably, the left side of the upper shell is provided with a buckle groove, the operation space is enlarged by the buckle groove, and the limiting block is far away from the lower shell when the installation and maintenance are convenient.

Preferably, the top of going up the casing is the arc structure, and the upper surface and the lower surface of going up the casing are the arc, have certain security, and its corner is difficult for fish tail assembler, has certain aesthetic property simultaneously.

Compared with the prior art, the utility model provides a pair of MEMS semiconductor gas sensor has following beneficial effect:

1. the utility model discloses in, through setting up down casing and last casing to the monocrystalline silicon basement, lower supporting layer, heating electrode, the insulating layer protects with sensitive electrode, avoid colliding impaired problem, the upper surface and the lower surface of going up the casing are the arc, certain security has, the difficult fish tail assembler of its corner, certain aesthetic property has simultaneously, certain water conservancy diversion function has, the small drop of water that makes probably appear slides down to the outside of casing down on the inner wall of last casing, and then avoid falling into the lower casing and influence the monocrystalline silicon basement, lower supporting layer, heating electrode, the life of insulating layer and sensitive electrode.

2. The utility model discloses in, through setting up bracing piece and fixing base, casing and last casing butt joint under the convenience to there is certain clearance between casing and the last casing under ensuring, the convenient detection gas, relevant personnel keep away from the bracing piece with the inserted bar through the stopper, through setting up and utilizing extension spring's elasticity principle that resets, thereby conveniently fix the bracing piece in the fixing base, ensured the stability of last casing installation back on the casing down, and then installation and maintenance monocrystalline silicon base, lower supporting layer, heating electrode, insulating layer and sensitive electrode.

Drawings

FIG. 1 is a schematic diagram of the overall structure of a MEMS semiconductor gas sensor;

FIG. 2 is a schematic cross-sectional view of a MEMS semiconductor gas sensor;

FIG. 3 is a schematic cross-sectional view of a support rod in a MEMS semiconductor gas sensor;

fig. 4 is an enlarged view of a structure at a in fig. 2.

Reference numbers in the figures: 1. a single crystal silicon substrate; 2. a lower support layer; 3. heating the electrode; 4. an insulating layer; 5. a sensing electrode; 6. a film; 7. a lower housing; 8. an upper housing; 9. a support bar; 10. a fixed seat; 11. positioning a groove; 12. inserting a rod; 13. a limiting block; 14. an extension spring; 15. a guide bar; 16. a guide groove; 17. buckling grooves; 18. and (4) a slot.

Detailed Description

Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are exemplary only for the purpose of explaining the present invention, and should not be construed as limiting the present invention.

In the description of the present invention, it should be understood that if the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. are used in the orientation or positional relationship indicated on the basis of the drawings, it is only for convenience of description and simplicity of description, and it is not intended to indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically limited otherwise.

In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected. Either mechanically or electrically. Either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.

In the first embodiment, as shown in fig. 1-4, a MEMS semiconductor gas sensor includes a monocrystalline silicon substrate 1, a lower supporting layer 2, a heating electrode 3, an insulating layer 4, and a sensing electrode 5, where the outside of the monocrystalline silicon substrate 1, the lower supporting layer 2, the heating electrode 3, the insulating layer 4, and the sensing electrode 5 is provided with a protection structure, the protection structure includes a lower casing 7, an upper casing 8, a supporting rod 9, and a fixing seat 10, the protection structure further includes an insertion rod 12, a limiting block 13, and a tension spring 14, the lower casing 7 is connected to the bottom of the monocrystalline silicon substrate 1, the supporting rod 9 is connected to the inner wall of the upper casing 8, the fixing seat 10 is connected to the inner wall of the lower casing 7, the insertion rod 12 is inserted into the lower casing 7 and the fixing seat 10, the outer wall of the supporting rod 9 is provided with a slot 18 adapted to the insertion rod 12, the limiting block 13 is connected to one end of the insertion rod 12 away from the supporting rod 9, the tension spring 14 is disposed between the lower casing 7 and the limiting block 13, the top of the fixed seat 10 is provided with a positioning groove 11 matched with the support rod 9, the upper shell 8 is positioned right above the lower shell 7, the monocrystalline silicon substrate 1, the lower support layer 2, the heating electrode 3, the insulating layer 4 and the sensitive electrode 5 are all positioned inside the lower shell 7, the four monocrystalline silicon substrates 1 are respectively arranged at four corners of the bottom of the lower support layer 2, the heating electrode 3 is arranged at the top of the lower support layer 2, the insulating layer 4 is arranged at the top of the heating electrode 3, the sensitive electrode 5 and the film 6 are arranged at the top of the insulating layer 4, the monocrystalline silicon substrate 1, the lower support layer 2, the heating electrode 3, the insulating layer 4 and the sensitive electrode 5 are protected by arranging the lower shell 7 and the upper shell 8, the problem of collision damage is avoided, the butt joint of the lower shell 7 and the upper shell 8 is facilitated by arranging the support rod 9 and the fixed seat 10, and a certain gap is ensured to exist between the lower shell 7 and the upper shell 8, the convenient gaseous of detection, relevant personnel keep away from bracing piece 9 with inserted bar 12 through stopper 13, through setting up and utilizing extension spring 14's elasticity principle that resets to conveniently fix bracing piece 9 in fixing base 10, ensured the stability of last casing 8 installation back on casing 7 down, and then installation and maintenance monocrystalline silicon basement 1, under bracing layer 2, heating electrode 3, insulating layer 4 and sensitive electrode 5.

In addition, the monocrystalline silicon substrate 1 is formed on the back surface through photoetching, a dry anisotropic etching process or a wet anisotropic etching process, so that the integration is easy, and the film 6 is internally and integrally formed with a plurality of metal oxide hollow nano-structure materials, so that the sensitivity of the gas sensor is improved.

In the second embodiment, on the basis of the first embodiment, the number of the supporting rods 9 and the fixing seats 10 is four, and the upper shell 8 is supported at multiple points on the lower shell 7 by the four supporting rods 9 and the four fixing seats 10, so that the stability of the upper shell 8 after being butted with the lower shell 7 is ensured.

In addition, for the supporting rod 9, a cavity is integrally formed in the supporting rod, and the whole weight is further reduced by arranging the cavity.

Third embodiment, on the basis of first embodiment, guide bar 15 is installed to the inner diapire of constant head tank 11, and the guide way 16 with guide bar 15 looks adaptation is seted up to the bottom of bracing piece 9, through setting up guide bar 15 and guide way 16, when pegging graft bracing piece 9 and fixing base 10, spacing and direction have further promoted the stability of bracing piece 9 in fixing base 10 simultaneously.

In addition, the material of bracing piece 9 and fixing base 10 is carbon fiber material, and carbon fiber material has the characteristics such as the texture is light, intensity is high, high temperature resistant, corrosion-resistant and non-deformable, through bracing piece 9 and fixing base 10 that set up to carbon fiber material, and not only weight is lighter, when facing a lot of extreme environment, can also guarantee its normal work moreover.

Fourth embodiment, on the basis of first embodiment, goes up casing 8's left side and has seted up catching groove 17, and the top of going up casing 8 is the arc structure, through setting up catching groove 17, has enlarged operating space, and when easy to assemble and maintenance, keeps away from lower casing 7 with stopper 13, and the upper surface and the lower surface of going up casing 8 are the arc, have certain security, and the difficult fish tail assembler of its corner has certain aesthetic property simultaneously.

In addition, for the upper shell 8, when the temperature difference between the inside and the outside of the upper shell 8 is large and the inner wall of the upper shell 8 may have micro water drops, the arc-shaped structure at the top of the upper shell has a certain flow guiding function, so that the possible micro water drops slide down to the outside of the lower shell 7 on the inner wall of the upper shell 8, and further the influence on the service life of the monocrystalline silicon substrate 1, the lower support layer 2, the heating electrode 3, the insulating layer 4 and the sensitive electrode 5 due to the fact that the water drops fall into the lower shell 7 is avoided.

The working principle is as follows: the MEMS sensor, i.e. the micro-electro-mechanical system, is the advanced research field of multidisciplinary intersection developed on the basis of microelectronic technology, and compared with the traditional sensor, the MEMS sensor has the characteristics of small volume, light weight, low cost, low power consumption, high reliability, suitability for batch production, easy integration and realization of intellectualization.

When the monocrystalline silicon substrate 1, the lower support layer 2, the heating electrode 3, the insulating layer 4 and the sensitive electrode 5 are protected, installed and maintained:

through setting up casing 7 and last casing 8 down to monocrystalline silicon basement 1, under bracing layer 2, heating electrode 3, insulating layer 4 protects with sensitive electrode 5, avoid colliding impaired problem, through setting up bracing piece 9 and fixing base 10, make things convenient for casing 7 and last casing 8 to dock down, and ensure to have certain clearance between casing 7 and the last casing 8 down, make things convenient for the detection gas, relevant personnel keep away from bracing piece 9 with inserted bar 12 through stopper 13, through setting up and utilizing extension spring 14's elasticity principle that resets, thereby conveniently fix bracing piece 9 in fixing base 10, the stability of last casing 8 installation back on casing 7 down has been ensured, and then installation and maintenance monocrystalline silicon basement 1, under bracing layer 2, heating electrode 3, insulating layer 4 and sensitive electrode 5.

It should be noted that, in this document, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims

1. The utility model provides a MEMS semiconductor gas sensor, includes monocrystalline silicon substrate (1), under bracing layer (2), heating electrode (3), insulating layer (4) and sensitive electrode (5), its characterized in that, the outside of monocrystalline silicon substrate (1), under bracing layer (2), heating electrode (3), insulating layer (4) and sensitive electrode (5) is provided with protective structure, protective structure includes casing (7), last casing (8), bracing piece (9) and fixing base (10) down.

2. A MEMS semiconductor gas sensor according to claim 1, the protective structure also comprises an inserted bar (12), a limited block (13) and an extension spring (14), the lower shell (7) is connected with the bottom of the monocrystalline silicon substrate (1), the support rod (9) is connected with the inner wall of the upper shell (8), the fixed seat (10) is connected with the inner wall of the lower shell (7), the inserted link (12) is inserted with the lower shell (7) and the fixed seat (10), the outer wall of the supporting rod (9) is provided with a slot (18) matched with the inserted rod (12), the limiting block (13) is connected with one end of the inserted bar (12) far away from the supporting bar (9), the extension spring (14) is arranged between the lower shell (7) and the limiting block (13), and the top of the fixed seat (10) is provided with a positioning groove (11) matched with the support rod (9).

3. A MEMS semiconductor gas sensor as claimed in claim 1, characterized in that the number of the supporting rods (9) and the holders (10) is four.

4. The MEMS semiconductor gas sensor as recited in claim 2, wherein a guide rod (15) is installed on the inner bottom wall of the positioning groove (11), and a guide groove (16) matched with the guide rod (15) is formed at the bottom of the supporting rod (9).

5. The MEMS semiconductor gas sensor according to claim 1, wherein the left side of the upper housing (8) is provided with a catching groove (17).

6. A MEMS semiconductor gas sensor as claimed in claim 1 wherein the top of the upper housing (8) is of arcuate configuration.