CN217378099U - Heating device of MOCVD reaction chamber - Google Patents
Heating device of MOCVD reaction chamber Download PDFInfo
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- CN217378099U CN217378099U CN202123345641.5U CN202123345641U CN217378099U CN 217378099 U CN217378099 U CN 217378099U CN 202123345641 U CN202123345641 U CN 202123345641U CN 217378099 U CN217378099 U CN 217378099U
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 71
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 title claims abstract description 20
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 13
- 230000008878 coupling Effects 0.000 claims abstract description 5
- 238000010168 coupling process Methods 0.000 claims abstract description 5
- 238000005859 coupling reaction Methods 0.000 claims abstract description 5
- 239000011810 insulating material Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 3
- 238000010030 laminating Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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CN202123345641.5U CN217378099U (en) | 2021-12-28 | 2021-12-28 | Heating device of MOCVD reaction chamber |
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CN202123345641.5U CN217378099U (en) | 2021-12-28 | 2021-12-28 | Heating device of MOCVD reaction chamber |
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CN217378099U true CN217378099U (en) | 2022-09-06 |
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CN202123345641.5U Active CN217378099U (en) | 2021-12-28 | 2021-12-28 | Heating device of MOCVD reaction chamber |
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CN (1) | CN217378099U (en) |
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2021
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Legal Events
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TR01 | Transfer of patent right |
Effective date of registration: 20240710 Address after: Room 701, 7th Floor, Building 1, No. 5 Xingye 1st Road, Ningbo Free Trade Zone, Zhejiang Province, 315000 (Yongbao Market Company Trust U222) Patentee after: Huaxia Semiconductor (Ningbo) Co.,Ltd. Country or region after: China Address before: 518117 402, workshop 7, TONGCHAN Lixing science and Technology Industrial Park, No. 1001, Longgang Avenue (Pingxi community), Pingdi street, Longgang District, Shenzhen, Guangdong Province Patentee before: Huaxia semiconductor (Shenzhen) Co.,Ltd. Country or region before: China |
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TR01 | Transfer of patent right |