CN217334120U

CN217334120U - LED support and LED lamp pearl

Info

Publication number: CN217334120U
Application number: CN202220429833.XU
Authority: CN
Inventors: 柯有谱; 施华平; 刘会萍; 谭青青; 孙平如; 李运华
Original assignee: Wuhu Jufei Photoelectric Technology Co ltd
Current assignee: Wuhu Jufei Photoelectric Technology Co ltd
Priority date: 2022-02-28
Filing date: 2022-02-28
Publication date: 2022-08-30
Anticipated expiration: 2032-02-28

Abstract

The utility model relates to a LED bracket and LED lamp beads, wherein the bracket main body of the LED bracket is provided with a reflecting cup for placing an inverted LED chip; the bottom of the reflecting cup is provided with a die bonding area, the die bonding area is provided with a concave part, the bottom of the concave part is provided with a first conductive area and a second conductive area which are respectively used for bearing a positive electrode and a negative electrode of the flip LED chip, and the bottom of the concave part is also provided with an isolation strip which insulates and isolates the first conductive area from the second conductive area; the bracket main body is also provided with a retaining wall which is arranged at the bottom of the reflecting cup and is positioned between the side wall of the reflecting cup and the solid crystal area, and when white glue is filled between the retaining wall and the side wall of the reflecting cup, the retaining wall can prevent at least part of the filled white glue from flowing into the solid crystal area; the first conductive area and the second conductive area at the bottom of the concave part are lower than the bottom of the reflecting cup to form a sinking area, so that the arranged solder or soldering flux is positioned in the sinking area as much as possible, and the risk of light attenuation caused by color change in the long-time baking process that the solder or the soldering flux overflows from the sinking area is eliminated.

Description

LED support and LED lamp pearl

Technical Field

The utility model relates to a luminous field especially relates to a LED support and LED lamp pearl.

Background

The main realization mode of the high-luminous-efficiency flip LED lamp bead which is mainstream in the market at present is that in a support 11, a flip LED chip 12 is fixed in a bowl cup of the support 11 by using a solder paste 13, a white glue layer 14 is filled around the flip LED chip 12, the white glue layer 14 covers the side surface of the flip LED chip 12 and is slightly lower than the flip LED chip 12, and then a fluorescent glue 15 covers the whole bowl cup to be approximately level with the cup opening through a glue dispensing process, wherein the top view is described in fig. 1 (for convenience of understanding, the perspective processing is performed on fig. 1), and the cross-sectional view is shown in fig. 2 (for convenience of clear view, a part of the cross-sectional view is omitted in the figure). The LED lamp bead structure has the following problems:

because the PN junction luminous layer of flip LED chip 12 is located the bottom of flip LED chip 12 (the one side that flip LED chip 12 is equipped with the electrode promptly), and the white glue film 14 covers the side of flip LED chip 12, lead to the white glue film 14 when effectively promoting the positive-going reflection light, can block the side direction light-emitting of flip LED chip 12 to a great extent, make the side direction light-emitting of flip LED chip 12 have more loss to the luminous efficiency who leads to LED lamp pearl is low.

SUMMERY OF THE UTILITY MODEL

In view of above-mentioned correlation technique not enough, the utility model aims at providing a LED support and LED lamp pearl aims at solving the problem that the luminous efficiency is low of current LED lamp pearl.

In order to solve the above problem, the utility model provides a LED support, include:

the LED support comprises a support body, wherein the support body is provided with a reflecting cup for placing a flip LED chip;

the bottom of the reflecting cup is provided with a die bonding area, the die bonding area is provided with a concave part, the bottom of the concave part is provided with a first conductive area and a second conductive area which are used for bearing a positive electrode and a negative electrode of the flip LED chip respectively, and the bottom of the concave part is also provided with an isolating strip which insulates and isolates the first conductive area from the second conductive area; the die bonding area in the utility model is an area containing a projection area of the flip LED chip at the bottom of the reflecting cup when the flip LED chip is arranged in the reflecting cup; that is, the die bonding region in this embodiment may be directly the projection region, or may be a region slightly larger than the area of the projection region as the die bonding region;

the support main part still has and locates the bottom of reflection cup, be located the lateral wall of reflection cup with the barricade between the solid crystal district the barricade with when filling white glue between the lateral wall, the barricade is used for blockking at least part of packing the white glue flows in solid crystal district.

In some embodiments, the retaining wall encloses the die attach region.

In some embodiments, the isolation strip is a long strip isolation strip, at least one end of the isolation strip in the length direction extends out of the die bonding area, and the isolation strip intersects with the retaining wall in the length direction to form a cross-over area, a channel communicated with the isolation strip is arranged in the cross-over area, and a part of the filled white glue flows to the isolation strip through the channel and stays between the isolation strip and the flip-chip LED chip.

In some embodiments, the holder body includes a base formed with the reflector cup, and further includes a first lead substrate and a second lead substrate embedded in the base; at least a part of the front surfaces of the first and second lead substrates are located in the recess to constitute a part of the bottom of the recess, and the front surfaces of the first and second lead substrates located in the recess form the first and second conductive regions, respectively;

the retaining wall and the base are of an integrally formed structure,

or the retaining wall, the isolation belt and the base are of an integrally formed structure;

or the first lead substrate, the isolation strip and the second lead substrate are provided with epitaxial regions extending out of the solid crystal region, and the retaining wall is formed by a protrusion protruding towards the cup opening of the reflection cup in the epitaxial region.

In some embodiments, the maximum height of the dam is 0.2 to 0.5 times the height of the flip-chip LED chip.

In some embodiments, the maximum height of the first and second conductive regions from the top of the recess is 0.1 to 0.3 times the height of the flip LED chip;

the maximum height of the isolation strip from the top of the recess is 0.2 to 0.5 times the height of the flip-chip LED chip.

In some embodiments, the die attach region is a rectangular die attach region, the cross-sectional shape of the flip-chip LED chip is rectangular, and the length and width of the die attach region are 1.1 to 1.5 times the length and width of the cross-sectional shape of the flip-chip LED chip, respectively.

Based on the same inventive concept, the utility model also provides an LED lamp bead, which comprises an inverted LED chip, a first packaging adhesive layer and the LED bracket;

the flip LED chip is arranged on the first conductive area and the second conductive area in the die bonding area in a spanning mode, a positive electrode and a negative electrode of the flip LED chip are electrically connected with the first conductive area and the second conductive area respectively, and a gap is formed between the side face of the flip LED chip and the retaining wall;

the first packaging adhesive layer comprises a first white adhesive layer formed by filling white adhesive between the retaining wall and the side wall of the reflecting cup.

In some embodiments, the isolation strip is a strip-shaped isolation strip, at least one end of the isolation strip in the length direction extends out of the die bonding area, and the isolation strip and the retaining wall intersect in the length direction to form a junction area, and the junction area is provided with a channel communicated with the isolation strip;

the first encapsulation glue film further comprises a second white glue film which flows from the channel to the isolation belt and stays between the isolation belt and the flip LED chip, wherein the second white glue film is formed by white glue, the top surface of the second white glue film is bonded with the bottom surface of the flip LED chip, and the bottom surface of the second white glue film is bonded with the isolation belt.

In some embodiments, the second white glue layer and the first white glue layer are in an integrated structure.

In some embodiments, the LED lamp bead further includes a second encapsulant layer filled in the reflective cup and covering the flip LED chip and the first white adhesive layer.

In some embodiments, the LED lamp bead further includes a protection element disposed at the bottom of the reflective cup, and the protection element is disposed between the retaining wall and the side wall of the reflective cup where the retaining wall is close to, and is covered by the first white glue layer.

The utility model provides a LED support and LED lamp bead, wherein the LED support comprises a support main body, and the support main body is provided with a reflecting cup for placing a flip LED chip; the bottom of the reflecting cup is provided with a die bonding area, the die bonding area is provided with a concave part, the bottom of the concave part is provided with a first conductive area and a second conductive area which are respectively used for bearing a positive electrode and a negative electrode of the flip LED chip, and the bottom of the concave part is also provided with an isolation strip which insulates and isolates the first conductive area from the second conductive area; the bracket main body is also provided with a retaining wall which is arranged at the bottom of the reflecting cup and is positioned between the side wall of the reflecting cup and the solid crystal region; when the white glue is filled between the retaining wall and the side wall of the reflecting cup, the retaining wall is used for blocking at least part of the filled white glue from flowing into the solid crystal region; therefore, in the process of manufacturing the LED lamp bead by using the LED support, the filled white glue can be prevented or reduced from flowing into the solid crystal region as far as possible under the blocking of the retaining wall, so that the side face of the flip LED chip is prevented or reduced from being covered by the formed first white glue layer as far as possible, and a gap is formed between the side face of the flip LED chip and the retaining wall, so that the first white glue layer and the retaining wall can be prevented from blocking the lateral light-emitting of the flip LED chip as far as possible, and the light-emitting efficiency of the LED lamp bead is improved;

in addition, the die bonding area is provided with a concave part, and the first conductive area, the second conductive area and the isolation strip for insulating and isolating the first conductive area and the second conductive area are formed as at least one part of the bottom of the concave part, so that the first conductive area and the second conductive area are positioned at the bottom of the reflecting cup, namely, the first conductive area and the second conductive area are designed to sink relative to the bottom of the reflecting cup to form a sinking area, therefore, solder or soldering flux arranged on the first conductive area and the second conductive area can be positioned in the sinking area as much as possible, namely, the solder or the soldering flux is prevented from overflowing the sinking area, and the risk of light attenuation caused by color change of the solder or the soldering flux overflowing the sinking area in a long-time baking process is eliminated.

Drawings

FIG. 1 is a schematic structural diagram of a conventional LED lamp bead;

FIG. 2 is a schematic cross-sectional view taken along line A0-A0 of FIG. 1;

fig. 3 is a first schematic structural diagram of an LED bracket according to an embodiment of the present invention;

FIG. 4 is a schematic cross-sectional view taken along line A1-A1 of FIG. 3;

fig. 5 is a schematic structural diagram of a LED bracket according to an embodiment of the present invention;

fig. 6-1 is a schematic structural diagram three of an LED support provided in the embodiment of the present invention;

fig. 6-2 is a schematic structural diagram of a LED support according to an embodiment of the present invention;

fig. 6-3 are schematic structural diagrams of an LED support according to an embodiment of the present invention;

fig. 6-4 are schematic structural diagrams six of an LED support provided by an embodiment of the present invention;

fig. 7 is a schematic structural diagram seven of an LED bracket according to an embodiment of the present invention;

fig. 8 is an eight schematic structural diagram of an LED bracket according to an embodiment of the present invention;

fig. 9 is a schematic structural diagram nine of an LED bracket according to an embodiment of the present invention;

fig. 10 is a schematic structural diagram ten of an LED bracket according to an embodiment of the present invention;

FIG. 11 is a schematic cross-sectional view taken along line A2-A2 of FIG. 10;

fig. 12 is a schematic view illustrating solder paste disposed in an LED support according to an embodiment of the present invention;

FIG. 13 is a schematic cross-sectional view taken along line A3-A3 of FIG. 12;

fig. 14 is a schematic view illustrating a flip LED chip disposed in an LED support according to an embodiment of the present invention;

FIG. 15 is a schematic cross-sectional view taken along line A4-A4 of FIG. 14;

fig. 16 is a schematic view illustrating a white glue layer disposed in an LED support according to an embodiment of the present invention;

FIG. 17 is a schematic cross-sectional view taken along line A5-A5 of FIG. 16;

fig. 18 is a schematic structural diagram of a LED lamp bead provided in the embodiment of the present invention;

FIG. 19 is a schematic cross-sectional view taken along line A6-A6 of FIG. 18;

fig. 20 is a schematic structural diagram ii of an LED lamp bead provided in the embodiment of the present invention;

fig. 21 is a third schematic structural view of an LED lamp bead provided in an embodiment of the present invention;

fig. 22 is a fourth schematic view of the structure of the LED lamp bead provided by the embodiment of the present invention.

Detailed Description

In order to facilitate understanding of the present invention, the present invention will be described more fully hereinafter with reference to the accompanying drawings. The preferred embodiments of the present invention are shown in the drawings. The invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.

In the correlation technique, because the white glue film of LED lamp pearl covers flip-chip LED chip's side, lead to the white glue film when effectively promoting the positive-going reflex light, blockked flip-chip LED chip's side direction light-emitting at to a great extent, make flip-chip LED chip's side direction light-emitting have more loss to lead to the light-emitting efficiency of LED lamp pearl to hang down. Based on this, the present invention is intended to provide a solution to the above technical problem, the details of which will be explained in the following embodiments.

The embodiment provides an LED support capable of improving light extraction efficiency, which can be applied to a flip LED chip and comprises a support main body formed with a reflecting cup for placing the flip LED chip. In this embodiment, the bottom of the reflective cup has a die attach area, the die attach area has a recess, the bottom of the recess has a first conductive area and a second conductive area for respectively carrying a positive electrode and a negative electrode of the flip-chip LED chip, and the bottom of the recess further has a strap for insulating and isolating the first conductive area and the second conductive area. The support body in this embodiment further has a retaining wall disposed at the bottom of the reflective cup and located between the sidewall of the reflective cup and the die bonding region. Through the arrangement of the retaining wall, when the white glue is filled between the retaining wall and the side wall, the retaining wall can prevent at least part of the filled white glue from flowing into the solid crystal region. The white glue that can avoid as far as possible or reduce to fill flows to solid brilliant district in to avoid as far as possible or reduce the first white glue layer that forms and cover the side of flip-chip LED chip, promote the luminous efficiency of LED lamp pearl. In addition, in the embodiment, the die attach area is provided with a concave portion, and the first conductive area, the second conductive area and the isolation strip for insulating and isolating the first conductive area and the second conductive area are formed as at least one part of the bottom of the concave portion, that is, the first conductive area and the second conductive area are designed to be sunk relative to the bottom of the reflective cup to form a sunk area, so that solder or soldering flux arranged on the first conductive area and the second conductive area can be located in the sunk area as much as possible, the solder or the soldering flux is prevented from overflowing the sunk area, and the risk of light attenuation caused by the fact that the solder or the soldering flux overflows the sunk area and discolors in the long-time baking process is eliminated.

In this embodiment, the retaining wall is disposed at the bottom of the reflective cup, and in which region between the sidewall of the reflective cup and the die bonding region is disposed, and can be flexibly disposed according to specific application requirements. For example, when other electronic components (for example, a protective component may be included) are disposed at the bottom of the reflective cup between a side of the die bond region and a sidewall of the reflective cup adjacent to the side, a retaining wall may be disposed at the side, and the electronic component may be covered by a white glue disposed between the retaining wall and the sidewall adjacent to the retaining wall, so as to reduce the influence of surface absorption of the electronic component on brightness. Of course, in some examples, if the electronic component is first disposed on the LED support and then the retaining wall is disposed, the retaining wall disposed at this time may also cover at least a portion of the electronic component. For another example, in some examples, when the white glue needs to be filled around the solid crystal region, a retaining wall may be disposed between the periphery of the solid crystal region and the sidewall of the reflective cup, and the retaining wall encloses the solid crystal region. The structure of the support main body included in the LED support in this embodiment can also be flexibly set. For ease of understanding, the present embodiment is described below with reference to several examples of LED support structures shown in the drawings.

An exemplary LED holder is shown in fig. 3 and 4 (for convenience of clarity in this embodiment, a partial cross-sectional view is omitted in fig. 4 and other cross-sectional views), the holder body includes a base 2 formed with a reflective cup 21, the reflective cup 21 in this embodiment can also be referred to as a bowl cup, the bottom of the reflective cup 21 has a die bonding region 30, the die bonding region 30 can be used for placing a flip-chip LED chip, and the die bonding region 30 has a recess K. It should be understood that the base 2 in this embodiment may be made of a transparent material or a non-transparent material, and when the transparent material is used, each outer surface of the base 2 can emit light, for example, the base 2 may be transparent or translucent, so as to further improve the light emitting efficiency of the LED bracket, and make the light emitting angle greater than 180 °. Of course, the base 2 in this embodiment may also be made of non-transparent material, for example, various non-transparent materials with better reflectivity may be selected. In some application scenarios of the present embodiment, the material of the base 2 may be, but is not limited to, a thermosetting transparent plastic carrier or a thermoplastic transparent plastic carrier, and the thermosetting transparent plastic or the thermoplastic transparent plastic has the advantages of low cost, easy manufacturing (for example, it can be realized by casting or various injection molding processes), and good versatility. For example, specifically, but not limited to, polyphthalamide PPA, poly 1-4-cyclohexanedimethanol terephthalate PCT, epoxy molding compound EMC or SMC composite materials may be used. It should be understood that the base 2 may be made of other materials as required, such as but not limited to ceramic, and the description thereof is omitted. It should be understood that the shape and size of the base 2 in the present embodiment can be flexibly set, and for example, the base can be set to various regular shapes such as rectangular parallelepiped, square, arc, etc., and can also be set to irregular shapes. The cross-sectional shape of the reflector cup 21 formed on the base 2 can be flexibly set, for example, the reflector cup can be set to be a regular shape such as a circle, an ellipse, a rectangle, a racetrack shape, and the like, and can also be formed to be other irregular shapes, which is not described in detail herein. Optionally, in some application scenarios, in order to further facilitate light extraction of the flip LED chip, the inner diameter of the reflective cup 21 may be gradually increased toward the opening of the reflective cup 21 from the bottom of the reflective cup 21.

Referring to fig. 3 and 4, the holder body further includes a first lead substrate 31 and a second lead substrate 32 embedded in the base 2; at least a part of the front surfaces of the first and second

lead substrates

31 and 32 are located in the recess K of the die attach region 30 to form a part of the bottom of the recess K, and the front surfaces of the first and second

lead substrates

31 and 32 located in the recess K form a first conductive region 311 and a second conductive region 321, respectively; in this example, the area of the front surface of the isolation strip 23 located in the concave portion K of the die attach region 30 is the insulating exposed region 231, that is, the bottom of the concave portion K of the die attach region 30 in this example includes the first conductive region 311, the second conductive region 321 and the insulating exposed region 231, and the isolation strip 23 in this example is in a long strip shape. It should be understood that the number of flip LED chips to be placed in the die attach region 30 in this embodiment may be a single chip, or may be two or more, and specifically, the number may be flexibly set according to application requirements.

It should be understood that, in the present embodiment, at least one of the first lead substrate 31 and the second lead substrate 32 may be, but is not limited to, a conductive metal substrate, and the material of the first lead substrate 31 and the material of the second lead substrate 32 may be the same or different. For example, at least one of the first lead substrate 31 and the second lead substrate 32 may be at least one of, but not limited to, an aluminum substrate, a copper substrate, a silver substrate, a conductive alloy substrate, or the like. It is to be understood that at least one of the first and second

lead substrates

31 and 32 may be a single-layer substrate, or a composite-layer substrate composed of at least two sub-substrates. In this embodiment, the bottom of the reflective cup is not limited to the first lead substrate 31 and the second lead substrate 32, and a third lead substrate, a fourth lead substrate, and the like can be further disposed as required, and the corresponding relationship between each lead substrate and the corresponding electrode of the flip LED chip is flexibly set, and the number of the lead substrates that are specifically disposed can be flexibly set as required, which is not repeated here.

Referring to fig. 3 and 4, in the present example, the LED support includes a retaining wall 22 at the bottom of the reflecting cup 21 and between the sidewall of the reflecting cup 21 and the die-bonding region 30, and the retaining wall 22 in the present example encloses the die-bonding region 30, that is, a retaining wall is disposed around the die-bonding region 30 at the bottom of the reflecting cup 21 to enclose the die-bonding region 30. The retaining wall 22 in this example can block the white glue filled between the retaining wall 22 and the side wall of the reflecting cup 21 from flowing into the die bonding region 30, and can include completely blocking the white glue filled around the die bonding region 30 outside the die bonding region 30 through the retaining wall 22, where the retaining wall 22 can completely surround the die bonding region 30 to form a fully enclosed structure. It should be understood that in some application scenarios, only most of the white glue filled around the die bonding region 30 may be blocked outside the die bonding region 30, and at this time, the retaining wall 22 may partially enclose the die bonding region 30 to form a non-full enclosure, and it is foreseeable that, in this example, even if the retaining wall 22 partially encloses the die bonding region 30 to form a non-full enclosure, it may also block most of the white glue filled around the die bonding region 30 outside the die bonding region 30, so as to ensure that most of the side surfaces of the flip-chip LED chip in the die bonding region 30 are not covered by the white glue, and thus the side light extraction rate of the flip-chip LED chip may be greatly improved.

In this embodiment, the white glue layer formed by the white glue filled between the retaining wall 22 and the side wall of the reflective cup 21 has better reflective performance, so that the light-emitting efficiency of the LED support can be further improved. It should be understood that the white glue in this embodiment may adopt various white glues satisfying the above characteristics, for example, in some application scenarios, the white glue component may mainly be but not limited to a silica gel (such as methyl silicone resin or phenyl silicone resin) mixed with at least one of titanium dioxide TiO2 particles, silicon dioxide SiO2 particles, and aluminum oxide Al2O3 particles, and in this application scenario, the particle size of TiO2, SiO2, and Al2O3 may be between 20um and 40 um. Certainly, in the application scenario, the white glue may further include diffusion particles to further improve the light extraction efficiency. Of course, the white glue in this embodiment is not limited to the material of the above example, and other materials may be adopted, which are not described in detail herein.

In this embodiment, the material, shape, size, etc. of the retaining wall 22 can be flexibly set according to the application requirement on the basis of stopping at least part of the filled white glue outside the die bonding region 30. For example, in some applications, the retaining wall 22 may be made of a transparent material or a non-transparent material, and the material of the retaining wall 22 may be the same as that of the base 2 or different from that of the base 2. For example, in some application scenarios, the material of the retaining wall 22 may be the same as the material of the base 2, and the retaining wall 22 and the base 2 may be formed as an integral structure, so that the retaining wall 22 and the base 2 can be formed at one time in one manufacturing process, thereby simplifying the manufacturing process of the LED bracket and reducing the manufacturing cost. In still other application examples, the retaining wall 22, the isolation strip 23 and the base 2 may be made of the same material, and the retaining wall 22, the isolation strip 23 and the base 2 may be an integrally formed structure, that is, the retaining wall 22, the isolation strip 23 and the base 2 may also be formed in one step, so as to further simplify the manufacturing process of the LED support and reduce the manufacturing cost. Of course, it should be understood that, in the present embodiment, at least two of the retaining wall 22, the isolation belt 23 and the base 2 may not be provided as an integrally formed structure, and the material of at least two may also be provided differently. For example, in some applications, the first lead substrate, the isolation strip and the second lead substrate have epitaxial regions extending out of the die bond region 30, and the retaining wall 22 in the above examples can be formed by a protrusion protruding toward the bottom D of the reflective cup (in other words, toward the cup opening of the reflective cup) in the epitaxial regions of the first lead substrate, the isolation strip and the second lead substrate. The bumps on the first lead substrate and the second lead substrate can be manufactured during manufacturing of the lead substrates, and the manufacturing is simple, low in cost and high in efficiency. The protrusions on the isolation belt can be formed during manufacturing of the isolation belt, and can be integrally formed with the base or can be in a non-integrally formed structure with the base.

In this embodiment, the cross-sectional shape of the retaining wall 22 in each of the above examples is not limited strictly, and may be, for example, a rectangle as shown in fig. 4, or a trapezoid, a triangle, a hexagon, or a combination of an arc and a rectangle, or may be other irregular shapes, which is not described herein again. In this embodiment, the side surface of the retaining wall 22 combined with the white glue may be a smooth surface, or may be a rough surface with a concave-convex structure, so as to improve the combination area and combination strength of the white glue and the side surface, and improve the overall strength and reliability of the LED bracket.

In the present embodiment, the height of the retaining wall 22 in each of the above examples can be set based on, but not limited to, the height of the flip LED chip. The height of the retaining wall 22 in this embodiment is from the bottom D of the reflective cup 21 to the top surface of the retaining wall 22. In an example of the present embodiment, the height of the retaining wall 22 is preferably set to effectively block the white glue from flowing into the die attach area 30 and block the side of the flip-chip LED chip as little as possible. For example, in the present example, the maximum height of the retaining wall 22 may be set to be 0.2 to 0.5 times the height of the flip-chip LED chip, for example, the maximum height of the retaining wall 22 may be set to be 0.2 times, 0.25 times, 0.3 times, 0.4 times, or 0.5 times the height of the flip-chip LED chip according to the specific application requirement. In this embodiment, the width of the retaining wall 22 is not strictly limited, and can be flexibly set according to the requirements of the overall strength of the retaining wall 22 in a specific application scenario, and the details are not repeated herein. In some application scenarios of the present embodiment, when other electronic components (e.g., protection components) are disposed in the reflective cup, the maximum height of the retaining wall 22 may be higher than the height of the electronic components, or may be slightly lower than or level with the height of the electronic components, for example, 0.2 to 1 times the height of the electronic components.

In the present embodiment, when the retaining wall 22 is made of a non-light-transmitting material, in order to ensure that the light emitted from the side surface of the flip-chip LED chip can effectively exit the LED support, in some examples, after the flip-chip LED chip is disposed in the die attach region 30, a certain gap is formed between each side surface of the flip-chip LED chip and the retaining wall 22. For example, in some application scenarios, the cross-sectional shape of the employed flip-chip LED chip is rectangular, such as rectangular or square. The die bonding region 30 at the bottom of the reflective cup 21 is also rectangular, that is, the die bonding region 30 is a rectangular die bonding region, and the die bonding region 30 can be long and wide, which are 1.1 to 1.5 times of the cross section of the flip LED chip, for example, the die bonding region 30 can be 1.1 times, 1.2 times, 1.3 times, 1.4 times or 1.5 times of the cross section of the flip LED chip, and the die bonding region 30 is 1.1 times, 1.25 times, 1.35 times, 1.45 times or 1.5 times of the cross section of the flip LED chip, so that when the flip LED chip is arranged in the die bonding region 30, a certain gap is formed between the side surface of the flip LED chip and the retaining wall 22, and the light extraction efficiency of the LED support is further improved. It should be understood that the shape of the die attach region 30 in this embodiment is not limited to the same shape as the cross-section of the flip-chip LED chip, and the two shapes may also be different, and the shapes of the two shapes are not limited to rectangular, and may also be other shapes, such as racetrack shape, oval shape, etc., or other irregular shapes, as required.

In this embodiment, the retaining wall 22 is provided to block the filled white glue from flowing into the solid crystal region 30. When die bonding is performed in the die bonding area 30, solder or soldering flux is required to be arranged on the first conductive area 311 and the second conductive area 321 in the die bonding area, and the flip-chip LED chip is soldered in the die bonding area 30 through the solder or the soldering flux; compared with the existing LED lamp bead, the white glue is blocked by the retaining wall 22, so that the solder or the flux in the die attach area 30 is no longer covered by the white glue, which may cause the solder or the flux in the die attach area to change color during a long-time (e.g. a general period of 3000H or more) baking process, thereby causing light decay. In view of this problem, in the present embodiment, the first conductive regions 311 and the second conductive regions 321 at the bottom of the recess K of the die attach area 30 are lower than the bottom D of the reflective cup 21, that is, the first conductive regions 311 and the second conductive regions 321 are designed to be sunk with respect to the bottom D of the reflective cup 21 to form a sunk region (in this example, the recess K), so that the solder or the flux disposed on the first conductive regions 311 and the second conductive regions 321 can be located in the recess K as much as possible, and the solder or the flux is prevented from overflowing the recess K, thereby eliminating the above risk of light attenuation. It should be understood that, in the present embodiment, only a portion of the solid crystal region 30 may be set to sink with respect to the bottom of the reflective cup 21, and the concave portion K of the solid crystal region 30 is a portion of the solid crystal region; the entire solid crystal region 30 may be set to be depressed with respect to the bottom of the reflector cup 21, and the recess K includes the entire solid crystal region 30. The height of the flip LED chip in this embodiment is the height from the bottom surface of the electrode of the flip LED chip to the top surface of the flip LED chip. For example, the sinking height of the die attach region 30 may be set to be less than the height of the flip-chip LED chip, and after the flip-chip LED chip is disposed on the die attach region 30, the bottom surface of the flip-chip LED chip may be higher than or level with the bottom of the reflective cup 21, or may be lower than the bottom of the reflective cup 21, depending on the height of the solder layers disposed on the first conductive region 311 and the second conductive region 321; when the sinking height of the die attach area 30 is equal to or greater than the height of the flip-chip LED chip, and the flip-chip LED chip is disposed in the die attach area, the top surface of the flip-chip LED chip may be higher than or flush with the bottom of the reflective cup, or may be lower than the bottom of the reflective cup, and also depends on the height of the solder layer disposed on the first conductive region 311 and the second conductive region 321, which is only described above for the sinking example of the die attach area 30, and the sinking height can be flexibly set according to the application scenario. For example: in some application scenarios, referring to fig. 4, the maximum height (D1/D3) of the first conductive region 311 and the second conductive region 321 from the top of the recess K may be set to be 0.1 to 0.3 times the height of the flip LED chip, i.e., the height difference between the bottom D of the reflective cup 21 and the first conductive region 311 and the second conductive region 312 may be set to be 0.1 to 0.3 times the height of the flip LED chip; the maximum height D2 of the spacer 23 from the top of the recess K may be set to be 0.2 to 0.5 times the height of the flip LED chip, i.e. the difference in height between the bottom D of the reflective cup 21 and the front surface of the spacer 23 is 0.2 to 0.5 times the height of the flip LED chip. Alternatively, in order to ensure that solder or flux is effectively blocked in the first and second

conductive regions

311 and 321, i.e., in the recess K, as much as possible, the areas of the first and second

conductive regions

311 and 321 may be set to be equal to or larger than the areas of the positive and negative electrode bottom surfaces of the flip LED chip, respectively. The first and second

conductive regions

311 and 321 may be sized to match the bottom surfaces of the positive and negative electrodes of the flip LED chip. For ease of understanding, the present embodiment will be described below with reference to the example shown in fig. 4. Referring to fig. 4, in the present example, the front surfaces of the first lead substrate 31, the second lead substrate 32 and the isolation strip 23 are lower than the bottom D of the reflective cup 21, and as can be seen in fig. 4, the first conductive region 311, the second conductive region 321 and the insulating exposed region 231 are disposed flush or substantially flush (although the insulating exposed region 231 may be disposed lower than the first conductive region 311, the second conductive region 321), and are all lower than the bottom D of the reflective cup 21, so that the solder or flux disposed on the first conductive region 311 and the second conductive region 321 is located in the recess K. And after the flip-chip LED chip is disposed in the die attach region 30, the bottom surface of the flip-chip LED chip can cover the recess K (i.e., the first conductive region 311, the second conductive region 321, and the insulating exposed region 231), so as to eliminate the risk of light attenuation.

As shown in the above example, the blocking wall 22 in this embodiment is not limited to completely enclose the die bonding region 30, i.e., it is not limited to enclose the die bonding region 30. To facilitate understanding, the present embodiments are further described below in terms of several example configurations.

For example, referring to fig. 5, the LED support in this example includes a retaining wall 22 formed between one side of the die bond region 30 and the side wall of the reflective cup adjacent to the one side, where the retaining wall 22 in this example is perpendicular to the length direction of the isolation strip, that is, the retaining wall 22 is only disposed at one side of the die bond region 30 at the bottom of the reflective cup 21, which is perpendicular to the length direction of the isolation strip. In this example, when the protection element 7 (or other electronic elements) is disposed between the retaining wall 22 and the side wall of the reflective cup 21 adjacent to the retaining wall 22, it can be covered by the white glue filled between the retaining wall 22 and the side wall of the reflective cup 21 adjacent to the retaining wall 22, so as to reduce the light absorption on the surface of these elements and improve the light extraction efficiency. When the dam 22 and the sidewall of the reflector cup adjacent to the dam 22 are filled with the white glue, the dam 22 can be used to block at least a portion of the filled white glue from flowing into the die bonding region 30. In addition, in this example, all the side walls of the reflective cup 21 may be set as reflective surfaces, or at least, all the side walls of the reflective cup 21 that are not covered by the filled white glue may be set as reflective surfaces, so that even if the side walls are not covered by the white glue, the reflective effect can be ensured, and the light extraction efficiency is further improved.

In other application scenarios of this embodiment, retaining walls 22 may be disposed on two sides of the die attach region 30 at the bottom of the reflector cup 21 perpendicular to the length direction of the isolation strip, as required, for example, see fig. 7. For another example, referring to fig. 6-3, in some application scenarios, the retaining wall 22 may be disposed on one side of the bottom of the reflective cup 21 parallel to the length direction of the isolation strip, or the retaining walls 22 may be disposed on two sides of the bottom of the reflective cup 21 parallel to the length direction of the isolation strip, respectively, as required. Or a retaining wall 22 may be provided on both of at least one side of the bottom of the reflecting cup 21 parallel to the longitudinal direction of the barrier rib and at least one side perpendicular to the longitudinal direction of the barrier rib, for example, as shown in fig. 8. That is to say, in this embodiment, can be according to the nimble selection of demand set up the barricade in one of them side or the multiple side of the solid brilliant district 30 in reflection cup 21 bottom and when follow-up preparation LED lamp pearl, can reduce the use of white glue, reduce cost, can simplify the filling process of white glue again, promote the preparation efficiency, can satisfy the demand of various application scenes simultaneously, flexibility and commonality are good. Meanwhile, other side walls of the reflecting cup can be at least arranged as reflecting surfaces according to requirements, and the light emitting efficiency can be further improved.

In some examples of the present embodiment, at least one of the two ends of the retaining wall 22 is extended to the side wall of the reflector cup 21 and may be integrally connected to the side wall. For example, referring to fig. 6-1, the two ends of the retaining wall 22 are extended to two opposite side walls of the reflector cup 21 and are connected with the two side walls into a whole. The retaining wall 22 of fig. 6-1 can improve the overall strength of the bracket by being integrally connected to the side walls. And because the retaining wall 22 has a certain height, it can form the accommodating cavity F shown in the diamond-shaped filling area in fig. 6-1 by enclosing with the side wall of the reflective cup 21, and the accommodating cavity F can better accommodate the filled white glue and is more beneficial to the subsequent white glue molding.

It should be understood that the position of the retaining wall 22 disposed at the bottom of the reflector cup 21 in the present embodiment can be flexibly disposed, and it can be located at any position between the sidewall of the reflector cup 21 at the bottom of the reflector cup 21 and the die bonding region, and can also be located at the boundary between the bottom of the reflector cup 21 and the sidewall of the reflector cup 21, for example, as shown in fig. 6-2, wherein the retaining wall 22 is located at the boundary between the bottom of the reflector cup 21 and the sidewall of the reflector cup 21, and the sidewall adjacent to the retaining wall 22 has a recess H for disposing other electronic components, and the recess H can form a receiving cavity for receiving the white glue. This arrangement enables at least one of the long sides of the retaining wall 22 to be integrally formed with the side wall of the reflector cup 21, thereby further simplifying the structure of the bracket and improving the strength thereof. Another aspect of the dam 22 at the intersection of the bottom of the reflector cup 21 and the sidewall of the reflector cup 21 is shown in fig. 6-4.

In the present embodiment, the retaining wall 22 is provided to block the filled white glue from flowing into the die attach region 30, so that the filled white glue does not wrap the side of the flip-chip LED chip. When the LED lamp bead is manufactured, secondary tin melting can be caused by SMT heating in the using process, and due to the fact that the LED flip chip is not bound by white glue any more, the problem of insufficient solder can occur in the secondary tin melting process. In some examples of the present embodiment, referring to fig. 3, the isolation strip 23 may be an elongated isolation strip, and at least one end of the isolation strip 23 in the length direction extends out of the die attach region 30 and intersects with the retaining wall 22 in the length direction to form a junction region J. In this example, it can be set that the joint area J has a channel communicating with the isolation strip, this channel can supply a part of the white glue filled in the die bonding area 30 to flow to the isolation strip 23, and stay between the isolation strip 23 and the flip LED chip, that is, one side is bonded with the isolation strip 23, the opposite side is bonded with the flip LED chip, thereby forming better fixation to the flip LED chip, even meet SMT heating and result in the secondary to melt tin, because the flip LED chip is fixed by the white glue between isolation strip and its bottom, the condition of pseudo soldering can be avoided as far as possible, thereby the reliability of the product is improved. For example, when the retaining wall 22 is provided on at least one side of the die bonding region 30 perpendicular to the length direction of the isolation strip at the bottom of the reflective cup 21, at least one junction region J where the retaining wall 22 and the isolation strip 23 are provided may be provided with a channel communicating with the isolation strip 23 (the channel may be formed by, but not limited to, not providing the retaining wall in the junction region J to form a channel therein; a retaining wall may also be provided in the junction region and a through hole communicating with the die bonding region 30 is formed in the retaining wall to form a channel therein), the channel may allow a part of the white glue filled in the die bonding region 30 to flow to the isolation strip 23 and stay between the isolation strip 23 and the flip-chip LED chip, i.e. one side is bonded to the isolation strip 23 and the opposite side is bonded to the flip-chip LED chip to form better fixation, even if the die bonding is performed by SMT heating to cause secondary tin melting, since the flip-chip is fixed by the white glue located between the isolation strip and the bottom thereof, the condition of insufficient solder can be avoided as much as possible, thereby improving the reliability of the product. Referring to fig. 9, as compared with the LED support shown in fig. 5, a first notch C1 communicating with the isolation strip 23 is provided in a junction region J of the retaining wall 22 and the isolation strip 23 to form a channel, the first notch C1 allows a part of the filled white glue to flow into the isolation strip 23 of the die attach region 30, and since a flip-chip LED chip is fixedly disposed in the die attach region 30 when an LED lamp bead is manufactured, the white glue flowing onto the isolation strip 23 stays at the bottom of the isolation strip 23 and the flip-chip LED chip and is located between a positive electrode and a negative electrode of the flip-chip LED chip, and forms a second white glue layer with a bottom surface and a top surface respectively bonded to the isolation strip 23 and the bottom of the flip-chip LED chip after curing. In this example, the width of the first notch C1 is the same as the width of the isolation belt 23, so as to increase the flow rate and velocity of the white glue flowing to the isolation belt as much as possible and avoid the white glue flowing to other areas of the die bonding area 30 as much as possible. Of course, the width of the first notch C1 may be slightly smaller than the width of the isolation strip 23 or slightly larger than the width of the isolation strip 23 according to the requirement. For another example, referring to fig. 10, with respect to the LED bracket shown in fig. 3, two junction areas J of the retaining wall 22 and the isolation belt 23 are respectively provided with a first notch C1 and a second notch C2 communicated with the isolation belt 23. Therefore, when the white glue is injected, the white glue of the corresponding part can be converged towards the central area of the isolation belt 23 from the two directions of the first notch C1 and the second notch C2, so that the convergence efficiency is improved, and the uniformity of the thickness of the subsequently formed second white glue layer can be ensured. At least one of the first notch C1 and the second notch C2 in this example has the same width as the width of the isolation belt 23, so as to improve the flow rate and the flow velocity of the white glue flowing to the isolation belt as much as possible and avoid the white glue flowing to other areas of the solid crystal area 30 as much as possible. Of course, the width of at least one of the first notch C1 and the second notch C2 may be slightly smaller than the width of the isolation belt 23 or slightly larger than the width of the isolation belt 23 according to requirements.

In some examples of the present embodiment, referring to fig. 4, the first lead bottom surface 312 of the first lead substrate 31 and the second lead bottom surface 322 of the second lead substrate 32 are exposed to the bottom surface of the base 2. This arrangement has at least the following benefits: first, after heat generated during the operation of the flip-chip LED chip is transferred to the first lead substrate 31 and the second lead substrate 32, the heat can be rapidly transferred to the first lead bottom surface 312 and the second lead bottom surface 322, and is dissipated outwards through the first lead bottom surface 312 and the second lead bottom surface 322, thereby improving the heat dissipation efficiency. Second, in some application scenarios, the first lead bottom surface 312 and the second lead bottom surface 322 may be used as electrical connection portions for electrically connecting the LED support to the outside (for example, to corresponding pads on a circuit board), so as to simplify the structure of the LED support and reduce the cost.

In still other application examples of the present embodiment, referring to fig. 11, at least one of the first lead substrate 31 and the second lead substrate 32 may further be provided with an extending portion, and a bottom surface of the extending portion may also be exposed to the bottom surface of the base 2 to serve as a heat dissipation surface and/or an electrical connection portion for external electrical connection. In fig. 11, the first lead substrate 31 has a first lead substrate extension portion 310 extending to an outer sidewall of the base 2, a bottom surface of the first lead substrate extension portion 310 is exposed to the bottom surface of the base 2, the second lead substrate 31 has a second lead substrate extension portion 320 extending to another outer sidewall of the base 2, a bottom surface of the second lead substrate extension portion 320 is also exposed to the bottom surface of the base 2, the first lead substrate extension portion 310 and the second lead substrate extension portion 320 exposed to the bottom surface of the base 2 can be used as heat dissipation surfaces, and can also be used as electrical connection portions for electrical connection of the LED support to the outside according to specific application requirements, so that the LED support has better heat dissipation efficiency and better versatility.

This embodiment also provides a LED lamp pearl, and it includes flip-chip LED chip, first encapsulation glue film and as above each shown arbitrary LED support of example, wherein:

the flip LED chip is arranged on the first conductive area and the second conductive area in the die attach region in a spanning mode, the positive electrode and the negative electrode of the flip LED chip are electrically connected with the areas, exposed out of the die attach region, of the first conductive area and the second conductive area respectively, and a gap is formed between the side face of the flip LED chip and the retaining wall;

the first packaging adhesive layer comprises a first white adhesive layer filled between the retaining wall and the side wall of the reflection cup, and the first white adhesive layer is respectively attached to the side wall of the reflection cup, the bottom area of the reflection cup between the side wall and the retaining wall. Also, the first white glue layer at least does not cover most of the area of the side surface of the flip LED chip any more, so that the first white glue layer can be prevented from blocking the lateral light emitting of the flip LED chip as much as possible, and the LED lamp bead has higher light emitting efficiency.

It should be understood that the number of flip LED chips disposed in the reflective cup in this embodiment, and the light emission color of the flip LED chips can be flexibly set. For example, in some examples, only one flip LED chip may be disposed in the reflective cup, and the light emitting color of the flip LED chip may be blue, red, green, or ultraviolet light. In some examples, only two or more flip LED chips may be disposed in the reflective cup, the flip LED chips may be connected in series or in parallel, and when the number of the flip LED chips is greater than or equal to 3, the flip LED chips may be connected in series or in parallel, and the light emitting colors of the flip LED chips may be the same, for example, blue, red, green, or the like, or may be different or at least partially different; for example, in an application scenario, three flip LED chips may be disposed in the reflective cup, and the light emitting colors of the three flip LED chips may be blue, green, and red, respectively, so that the light emitting from the whole light emitting unit is white light. In this embodiment, the flip LED chip may include, but is not limited to, at least one of a large-sized or common-sized flip LED chip, a Mini LED chip and a Micro LED chip, which can better meet the requirements of various application scenarios.

For convenience of understanding, in the present embodiment, an LED lamp bead manufactured by using the LED support shown in fig. 10 is described as an example, in this example, the first lead substrate and the second lead substrate of fig. 10 adopt the first lead substrate and the second lead substrate structure shown in fig. 11. And it should be understood that when the LED lamp beads are manufactured by using the LED support shown in fig. 3 to 9, compared with the LED lamp beads manufactured by using the LED support shown in fig. 10, the main difference is that only one side or multiple sides of the die attach region may be needed to be provided with the retaining wall and the white glue, and whether the white glue flows onto the isolation strip or not according to whether the provided retaining wall has a channel communicated with the isolation strip or not, and therefore, the description is omitted here.

Referring to the LED lamp bead shown in fig. 18 and 19, the flip LED chip spans over the first lead substrate and the second lead substrate in the die attach region, the positive electrode and the negative electrode of the flip LED chip 5 are electrically connected to the first conductive region and the second conductive region of the first lead substrate 31 and the second lead substrate 32, respectively, and a gap exists between the side surface of the flip LED chip 5 and the retaining wall 22. The electrical connection of the positive and negative electrodes of the flip LED chip 5 to the first and second

lead substrates

31 and 32 in this example can be made by, but is not limited to, solder connection as shown in the above examples, and can also be made by conductive paste connection. When soldering is performed by solder, a solder paste may be used, and the solder paste may be, but not limited to, a solder alloy containing lead, such as a tin-lead Sn-Pb-based alloy, a tin-lead-bismuth Sn-Pb-Bi-based alloy, or a tin-lead-silver Sn-Pb-Ag-based alloy; lead-free solder alloys such as tin-silver Sn-Ag based alloys, tin-bismuth Sn-Bi based alloys, tin-zinc Sn-Zn based alloys, tin-antimony Sn-Sb, tin-silver-copper Sn-Ag-Cu based alloys, or tin-bismuth-silver Sn-Bi-Ag based alloys can also be used. When the bonding is carried out by the conductive adhesive, the adopted conductive adhesive has the characteristics of conductivity and bonding. In the present embodiment, when the conductive adhesive is classified as a conductive filler, the conductive adhesive used may include, but is not limited to, conductive silver adhesive, copper powder conductive adhesive, nickel carbon conductive adhesive, silver copper conductive adhesive, and the like.

The LED lamp bead includes a first white glue layer 61 filled around the die attach area 30 (as shown in the above examples, the first white glue layer may also be filled only on one side or two sides or three sides of the die attach area 30), the first white glue layer 61 is respectively attached to the side wall of the reflective cup, the bottom region of the reflective cup between the side wall and the retaining wall 22, and the first white glue layer 61 at least no longer covers most of the side surface of the flip LED chip 5. In this example, two areas where the retaining wall 22 and the isolation belt 23 meet are provided with a first notch and a second notch which are communicated with the isolation belt 23; the first encapsulation glue film also includes flows to the median 23 from this breach and stops the second white glue layer 62 that the white glue formed between median 23 and flip-chip LED chip 5, and the top surface of second white glue layer 62 is glued with flip-chip LED chip 5's bottom surface, and the bottom surface of second white glue layer 62 is glued with median 23 to form better fixed to flip-chip LED chip, appear the condition of rosin joint when avoiding the secondary to melt the tin. In this example, the second white glue layer 62 and the first white glue layer 61 can be formed into an integrally formed structure in one glue injection process, and can also be formed through different glue injection processes, and the formed structure can also be an integrally formed structure, so that the integrity and the overall strength of the product are improved. Of course, the second sealant layer 62 and the first sealant layer 61 can also be configured as a non-integral structure.

Referring to fig. 19, in some examples of the present embodiment, the LED lamp bead further includes a second encapsulant layer 63 filled in the reflective cup 21 and covering the flip-chip LED chip 5 and the first white encapsulant layer 61. The second encapsulant layer 63 in this embodiment may include, but is not limited to, at least one of a transparent adhesive layer (the lens adhesive layer in this embodiment includes transparent and semitransparent adhesive layers), a phosphor adhesive layer containing phosphor, and a quantum dot adhesive layer containing quantum dot particles, and may be flexibly configured according to application requirements. For example, in some examples, the second encapsulant layer 63 includes a transparent encapsulant layer filled in the reflective cup, and the top surface of the transparent encapsulant layer may be flush with, lower than, or higher than the rim of the reflective cup. And the top surface shape of the transparent adhesive layer is set to be a plane, and also can be set to be a concave surface, a convex surface or a concave-convex surface so as to form a corresponding lens shape, so that the light emitting effect is further improved. Of course, in this example, light diffusion powder may be further disposed in the transparent adhesive layer 300 according to requirements, so as to further improve the light diffusion effect. In other examples, the second encapsulation adhesive layer 63 includes a fluorescent adhesive layer filled in the reflective cup, the shape and height of the top surface of the fluorescent adhesive layer can be set with reference to the transparent adhesive layer, and light diffusion powder can be set in the fluorescent adhesive layer according to requirements to further improve the light diffusion effect; it should be understood that the phosphor paste layer in this example may be equivalently replaced with a quantum dot paste layer. In some application scenarios in this example, the second encapsulation adhesive layer 63 further includes at least two of a transparent adhesive layer, a fluorescent adhesive layer, and a quantum dot adhesive layer filled in the reflective cup, for example, the transparent adhesive layer and the fluorescent adhesive layer, or the transparent adhesive layer and the quantum dot adhesive layer, or the transparent adhesive layer, the fluorescent adhesive layer, and the quantum dot adhesive layer, which are sequentially disposed from the bottom of the reflective cup to the cup mouth, and in the application scenarios, the light diffusion powder may also be disposed in at least one of the transparent adhesive layer, the light adhesive layer, and the quantum dot adhesive layer as required, so as to further improve the light diffusion effect. The flip LED chip is kept away from the fluorescent glue layer and the quantum dot glue layer in the application scene, so that the situation that the heat generated by the flip LED chip is directly transferred to the fluorescent powder or the quantum dots in the fluorescent glue layer and the quantum dot glue layer to further influence the light conversion performance of the fluorescent powder or the quantum dots can be avoided, and the light emitting effect can be further ensured. Of course, the positions of the transparent adhesive layer, the fluorescent adhesive layer and the quantum dot adhesive layer can be interchanged according to requirements. It should be understood that the above examples are merely illustrative of several arrangements of the second encapsulant layer 63, and may be flexibly adjusted or replaced according to specific application requirements. For example, in the example shown in fig. 19, the top surface of the second encapsulant layer 63 is planar and slightly below the rim of the reflector cup. In the example shown in fig. 20, the top surface of the second encapsulating adhesive layer 63 is a cambered surface protruding outwards from the cup opening of the reflecting cup and is higher than the cup opening of the reflecting cup. In the example shown in fig. 21, the top surface of the second encapsulating adhesive layer 63 is a cambered surface which is concave towards the bottom of the reflecting cup and is lower than the cup mouth of the reflecting cup.

For easy understanding, the present embodiment will be described below with reference to an example of manufacturing the LED lamp bead shown in fig. 18 and 19. In this example, a flip LED chip is taken as a 40 × 40mil wafer with a typical size, the height of the flip LED chip is 200um, the size of the positive electrode and the negative electrode is 800 × 300um, and the width of the gap between the first lead substrate and the second lead substrate is 200 um. It will of course be appreciated that the relative dimensions of the LED support design will need to be adjusted to the specific size and height of the wafer used, but are within the scope of protection consistent with the principles of the present invention.

In this manufacturing example, the LED holder shown in fig. 10 and 11 is manufactured first. The retaining walls 22 in this manufacturing example enclose a square, the die bonding region enclosed by the retaining walls 22 is shaped as a square, and the side length of the square is 1.1 to 1.5 times of that of the flip-chip LED chip, for example, 1.2 times, that is, 1219 um. In this example, the maximum height of the retaining wall 22 is 0.2-0.5 times, for example, 0.2 times, i.e. 40um, that of the flip-chip LED chip, and the width of the retaining wall 22 and the inclination angles of the two side surfaces thereof can be flexibly set according to the design requirement of the structural strength of the LED bracket. The first lead substrate 31 and the second lead substrate 32 in this production example use red copper substrates. In this example, the dam 22 has a notch in the area where it meets the isolation strip 23 (i.e., the intersection area), and the width of the notch is 200um, which is the same as the width of the gap between the positive electrode and the negative electrode of the flip-chip LED chip. In this example, the conductive regions (i.e., the first conductive region and the second conductive region, which may also be referred to as pad portions) of the first lead substrate 31 and the second lead substrate 32, which are in contact with the flip LED chip, are designed to be sunk, the height of the sunk regions is 0.1 to 0.3 times, for example, 0.2 times, that is, 40um, the size of the sunk pads is equivalent to the size of the positive electrode and the negative electrode of the flip LED chip, for example, 800 × 300 um. Meanwhile, the isolation strip 23 is also designed to sink, and the sinking height is 0.2-0.5 times of the height of the flip-chip LED chip, for example, 0.2 times, that is, the sinking height is equal to the sinking height of the pad portion, so as to further reduce the difficulty and cost of the production of the LED support, and the width of the isolation strip 23 in this example is also 200 um.

Then, die bonding is completed, for example, as shown in fig. 12 and 13, solder paste 4 is coated on the first conductive region and the second conductive region, the flip LED chip is placed, and a reflow soldering operation is performed, wherein a maximum oven temperature of 290 ℃ can be set for 30s, and the reflow soldering operation is performed under a nitrogen atmosphere, so that metal particles of the solder paste 4 are prevented from being oxidized, and the solder paste 4 is melted and sufficiently bonded to the positive electrode and the negative electrode of the flip LED chip and the first conductive region and the second conductive region, as shown in fig. 15.

Manufacturing a first packaging adhesive layer, wherein the manufacturing comprises the steps of spraying white glue: a circle of white glue is sprayed around the retaining wall 22, namely the crystal fixing area, and the amount of the white glue needs to be adjusted according to the coating effect of the white glue. And the sprayed white glue flows into the space between the isolation strip 23 and the flip-chip LED chip 5 through the notch formed on the retaining wall 22 to form a second white glue layer 62. In this manufacturing example, the waiting time for performing the subsequent baking after the white glue is sprayed may be determined by the filling effect that the white glue flows into the space between the isolation strip 23 and the flip LED chip 5 through the notch formed on the retaining wall 22, and the subsequent baking may be performed after the white glue between the isolation strip 23 and the flip LED chip 5 is fully filled. In the present production example, the filling speed of the white paste can be adjusted to be fast or slow by increasing or decreasing the concentration of particles such as SiO2 in the white paste, and the principle is that the concentration of SiO2 determines the viscosity of the white paste and thus the flow speed of the white paste. In this example, the white glue is baked in an oven for 15min at a temperature of 150 ℃ to obtain the structure shown in fig. 16 and 17.

Manufacturing a second packaging adhesive layer, taking the fluorescent adhesive layer as an example in this example, and then, dispensing the fluorescent adhesive: and coating the prepared fluorescent glue dots in the reflecting cup, completely covering the whole reflecting cup until the whole reflecting cup is nearly level with the cup rim, and then carrying out a second baking procedure to complete a complete baking procedure. For example, baking conditions may be set to generally: prebaking for 1H, high-temperature baking for 2H, and returning to the temperature of 1H, wherein the high-temperature baking temperature is 150 ℃. And completely curing the white glue and the fluorescent glue to obtain a completely cured first white glue layer 61, a second white glue layer 62 and a second packaging glue layer 63, such as the LED lamp beads shown in fig. 18 and 19. In this LED lamp pearl structure, first white glue film 61 does not have with flip-chip LED chip 5 direct contact all around, the effectual side light-emitting that has released flip-chip LED chip 5, and the positive light-emitting of flip-chip LED chip 5 is still effectively reflected by first white glue film 61 simultaneously. The lead substrate sinks, so that the soldering flux is effectively blocked in the sinking area and completely positioned at the bottom of the flip LED chip 5, and the risk of light attenuation is eliminated. Simultaneously, the white glue is effectively filled in flip-chip LED chip 5 bottom and is formed second white glue layer 62, especially fills by the white glue between clearance between flip-chip LED chip 5's the two electrodes and median 23, makes flip-chip LED chip 5 position effectively fixed by second white glue layer 62, even in the use of LED lamp pearl, takes place the secondary through SMT heating and melts tin, also does not have the rosin joint risk, and the reliability is better.

In some embodiments of this embodiment, the LED lamp bead further includes a protection element disposed at the bottom of the reflective cup, and the protection element is located between the retaining wall and the side wall of the reflective cup where the retaining wall is close to, and is covered by the first white glue layer, so as to avoid or reduce light absorption on the surface of the protection element. It should be understood that the protection component in this embodiment can perform over-current and/or over-voltage protection on the flip-chip LED chip, and it can employ various components capable of performing protection, such as, but not limited to, a diode, a capacitor, and the like. And the number of the protection elements in one LED lamp bead can be single or two or more. When two or more than two are provided, the reflecting cup can be arranged on one side of the bottom of the reflecting cup, and can also be respectively arranged on different sides. For example, as shown in fig. 22, compared with the LED lamp bead shown in fig. 19, the LED lamp bead further includes a protection element 7, the protection element 7 is covered by a first white glue layer 61, so that light absorption on the surface of the protection element 7 can be reduced or avoided, light extraction efficiency of the LED lamp bead is improved, and the second packaging glue layer 63 is flush with the rim of the reflection cup.

The embodiment also provides a light-emitting component, which comprises a circuit board and the LED lamp bead as shown above; because LED lamp pearl's luminous efficiency is higher, the reliability is higher to light-emitting component's whole light-emitting rate and reliability can be promoted.

The light emitting assembly in this embodiment may be, but is not limited to, a lighting assembly for illumination, for example, the light emitting assembly may be an LED light bar including a plurality of LED light beads; the circuit board can be the flexible circuit board of rectangular shape (also can adopt the non-flexible circuit board to replace), and a plurality of LED lamp pearls distribute along the length direction of flexible circuit board on the flexible circuit board, can promote LED lamp strip luminous efficacy and reliability. In some application scenes of this embodiment, still can set up the packaging body including covering each LED lamp pearl on the flexible circuit board to protect LED lamp pearl, and send out the light to LED lamp pearl and carry out secondary refraction or reflection, thereby further promote its light-emitting effect, promote the illuminating effect of LED lamp strip. It should be understood that the LED light bar provided by the present embodiment can be widely applied to various lighting devices such as indoor lighting, outdoor lighting, interior lighting, and the like.

The light emitting assembly in this embodiment may also be, but is not limited to, a display assembly for displaying, such as a backlight assembly, which includes a plurality of LED light beads, and the plurality of LED light beads may be distributed in an array on a circuit board (which may include, but is not limited to, various display back panels), or may be staggered between adjacent rows or columns. Because the light-emitting efficiency of the LED lamp beads is higher, the reliability is better, the whole light-emitting of the backlight assembly is more uniform, the light-emitting efficiency is higher, and the display effect of the backlight assembly and the reliability of the backlight assembly can be improved. It should be understood that the display module provided in this embodiment can be widely applied to electronic devices with display screens, such as mobile phones, notebook computers, tablet computers, intelligent wearable products, eye protection products, vehicle terminals, and advertisement display terminals.

It is to be understood that the invention is not limited to the above-described embodiments, and that modifications and variations may be made by those skilled in the art in light of the above teachings, and all such modifications and variations are intended to be included within the scope of the invention as defined in the appended claims.

Claims

1. An LED support is characterized by comprising a support body, wherein the support body is provided with a reflecting cup for placing a flip LED chip;

the bottom of the reflecting cup is provided with a die bonding area, the die bonding area is provided with a concave part, the bottom of the concave part is provided with a first conductive area and a second conductive area which are used for bearing a positive electrode and a negative electrode of the flip LED chip respectively, and the bottom of the concave part is also provided with an isolating strip which insulates and isolates the first conductive area from the second conductive area;

2. The LED support of claim 1, wherein said dam encloses said die attach region.

3. The LED support according to claim 2, wherein the isolation strip is an elongated isolation strip, at least one end of the isolation strip in the length direction extends out of the die attach region, and intersects the retaining wall in the length direction to form a junction region, the junction region is provided with a channel communicated with the isolation strip, and the channel allows a part of the filled white glue to flow to the isolation strip and stay between the isolation strip and the flip-chip LED chip.

4. The LED holder according to any one of claims 1 to 3, wherein the holder body comprises a base formed with the reflective cup, and further comprises a first lead substrate and a second lead substrate embedded in the base; at least a part of the front surfaces of the first and second lead substrates are positioned in the concave portion to constitute a part of the bottom of the concave portion, and the front surfaces of the first and second lead substrates positioned in the concave portion form the first and second conductive regions, respectively;

the retaining wall and the base are of an integrally formed structure,

5. The LED support of any of claims 1-3, wherein the maximum height of the dam is 0.2 to 0.5 times the height of the flip-chip LED chip.

6. The LED holder of any of claims 1-3, wherein the first conductive region and the second conductive region have a maximum height from the top of the recess of 0.1 to 0.3 times the height of the flip LED chip;

7. The LED support according to any one of claims 1 to 3, wherein the die bonding region is a rectangular die bonding region, the flip-chip LED chip has a rectangular cross-sectional shape, and the length and width of the die bonding region are 1.1 to 1.5 times the length and width of the cross-section of the flip-chip LED chip, respectively.

8. An LED lamp bead, which is characterized by comprising a flip LED chip, a first packaging adhesive layer and the LED bracket of any one of claims 1-7;

9. The LED lamp bead according to claim 8, wherein the isolation strip is an elongated isolation strip, at least one end of the isolation strip in the length direction extends out of the die attach area, and intersects the retaining wall in the length direction to form a junction area, and the junction area is provided with a channel communicated with the isolation strip;

10. The LED lamp bead of claim 9, wherein the second white glue layer and the first white glue layer are an integrally formed structure.

11. The LED lamp bead of any one of claims 8-10, wherein the LED lamp bead further comprises a second encapsulant layer filled in the reflector cup covering the flip-chip LED chip and the first white glue layer.

12. The LED lamp bead according to any one of claims 8-10, wherein the LED lamp bead further comprises a protective element disposed at the bottom of the reflective cup, the protective element is disposed between the retaining wall and the side wall of the reflective cup and covered by the first white glue layer.