CN217306510U - Detachable substrate - Google Patents
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- CN217306510U CN217306510U CN202220857157.6U CN202220857157U CN217306510U CN 217306510 U CN217306510 U CN 217306510U CN 202220857157 U CN202220857157 U CN 202220857157U CN 217306510 U CN217306510 U CN 217306510U
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Abstract
The utility model provides a can dismantle base plate, can dismantle base plate is including the first base plate, metal level and the second base plate that connect gradually, first base plate with the second base plate includes at least one deck silicon carbide layer, silicon carbide layer set up in metal level one side, and/or first base plate and/or the second base plate is silicon carbide base plate. The detachable substrate is firmly combined with the supporting layer when in use, can be detached only by heating and simple energy application after use, is simple and convenient to operate, and is easy for industrial application.
Description
Technical Field
The utility model belongs to the semiconductor manufacturing field relates to a can dismantle base plate.
Background
The detachable joint of the two substrates has important application value in the field of semiconductor manufacturing. For example: semiconductor substrates need to be as thin as possible, in particular silicon carbide materials. However, an excessively thin substrate is reduced in strength, and easily undergoes warpage or even cracking. In order to avoid the above problems, a support substrate may be attached to one surface of the thin plate using an adhesive, and then the relevant manufacturing process is performed on the thin plate, and finally the support substrate is detached. However, the fabrication process of silicon carbide devices often requires high temperatures, such as high temperature ion implantation at 300-. The adhesive of the resin material cannot withstand a high temperature environment, so that the manufacturing process of the silicon carbide is not yet completed, and the silicon carbide thin plate is already separated from the support substrate.
SUMMERY OF THE UTILITY MODEL
For solving the technical problem that exists among the prior art, the utility model provides a can dismantle base plate, can dismantle the base plate when using the combination of base plate and supporting layer firm, only can realize dismantling through heating and simple energy application after the use, easy and simple to handle, easily carry out the industrialization and use.
In order to achieve the technical effects, the utility model adopts the following technical scheme:
an object of the utility model is to provide a can dismantle base plate, can dismantle base plate including the first base plate, metal level and the second base plate that connect gradually, first base plate with the second base plate includes at least one deck carborundum layer, carborundum layer set up in metal level one side, and/or first base plate and/or the second base plate is carborundum base plate.
In the utility model, the detachable substrate can be structured such that one of the first substrate and the second substrate is provided with a silicon carbide layer, or both the first substrate and the second substrate are provided with silicon carbide layers; one of the first substrate and the second substrate may be made of silicon carbide, or both the first substrate and the second substrate may be made of silicon carbide; one of the first substrate and the second substrate may be provided with a metal layer, or both the first substrate and the second substrate may be provided with a metal layer; the detachable substrate can also be formed by arranging and combining the technical schemes.
The utility model discloses in, under certain heat treatment condition, the metal in the metal level reacts rather than the carborundum of contact and forms the intermediate level, the intermediate level includes metal silicide and carbon for the joint strength of first base plate and second base plate reduces. The carbon generated by the reaction forms precipitates parallel to the plane of the substrate, and the precipitates are discontinuous, so that the formed intermediate layer contains gaps or hollow holes, thereby reducing the external force required by subsequent disassembly.
In the present invention, the silicon carbide layer or the silicon carbide substrate material formed by the first substrate and the second substrate may be single crystal or polycrystal.
In a preferred embodiment of the present invention, the thickness of the metal layer is 1 to 100nm, such as 2nm, 5nm, 10nm, 15nm, 20nm, 25nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, or 90nm, but the present invention is not limited to the above-mentioned values, and other values not listed in the above-mentioned range of values are also applicable.
As the preferred technical scheme of the utility model, the metal level includes any one in W layer, Hf layer, Nb layer, Ni layer, V layer, Mg layer, Ti layer, Zr layer, Mo layer, Ta layer, Co layer, Fe layer, Cr layer or Cu layer.
In the present invention, the metal layer may be an alloy metal layer formed of a combination of W and Hf, a combination of Hf and Nb, a combination of Nb and Ni, a combination of Ni and V, a combination of V and Mg, a combination of Mg and Ti, a combination of Ti and Zr, a combination of Zr and Mo, a combination of Mo and Ta, a combination of Ta and Co, a combination of Co and Fe, a combination of Fe and Cr, a combination of Cr and Cu, or a combination of W, Nb and Ta.
In the utility model, different metals and silicon carbide have different reaction temperatures. The selection can be made according to different application scenarios. The rule is as follows: the higher the temperature at which the metal and silicon carbide react, the higher the thermal budget that the substrate can withstand in the process prior to detachment, and the higher the thermal budget of the heat treatment required for detachment.
The utility model discloses in, can dismantle the metal silicide that the base plate heat treatment back generated and include tungsten silicide WSi 2 Hafnium silicide HfSi 2 Niobium silicide NbSi 2 Nickel silicide Ni 2 Si, vanadium silicide VSi 2 Magnesium silicide Mg 2 Si, TiSi titanium silicide 2 Zirconium silicide ZrSi 2 Molybdenum silicide MoSi 2 TaSi, tantalum silicide 2 Cobalt silicide CoSi 2 FeSi, iron silicide 2 CrSi, chromium silicide 2 Or copper silicide Cu 5 Si, etc.
As a preferred technical solution of the present invention, the first substrate and the second substrate further include a semiconductor substrate, a metal substrate, or a plastic substrate.
In the present invention, the semiconductor material may be a group IV semiconductor, a group I-III-VI semiconductor, a group II-V semiconductor, a group IV semiconductor, a group I-III-VI semiconductor, an organic semiconductor, or the like.
In the present invention, the detachable substrate is subjected to heat treatment by the detachable substrate, and then the metal layer is energized.
In the present invention, the temperature of the heat treatment is not lower than 600 ℃, such as 650 ℃, 700 ℃, 750 ℃, 800 ℃, 850 ℃, 900 ℃, 950 ℃ or 1000 ℃, but not limited to the enumerated values, and other unrecited values of the numerical range are also applicable.
In the present invention, the heat treatment may be performed in a vacuum or an inert atmosphere. The inert gas atmosphere may be a nitrogen gas atmosphere or a rare gas atmosphere such as argon or helium. In certain embodiments, the heat treatment may be performed in an active atmosphere.
The utility model discloses in, the base plate after thermal treatment is dismantled, can realize through providing the energy to the intermediate level that forms behind the thermal treatment or near the intermediate level, also can realize through chemical mode. Ways of providing energy include applying mechanical force, ultrasound, inserting a thin plate or blade; can also applyPressurized water, such as water or liquid jets; air pressure may also be applied. Combinations of the above methods may also be employed. The chemical means includes etching, and at least H can be used 2 SO 4 、H 2 O 2 、H 2 A mixed solution of O and HF, removing silicide from the intermediate layer by etching.
The utility model discloses in, the preparation method of can dismantling the base plate includes:
depositing a metal layer on the surface of the first substrate and/or the second substrate;
and jointing the first substrate and the second substrate, wherein the metal layer is positioned on the joint side.
The utility model discloses in, the preparation method includes:
epitaxially growing a silicon carbide layer on the surface of the first substrate and/or the second substrate;
depositing a metal layer on the surface of the first substrate and/or the second substrate, wherein the metal layer is deposited on the surface of the silicon carbide layer;
and jointing the first substrate and the second substrate, wherein the metal layer is positioned on the joint side.
In the present invention, the epitaxial growth includes a metal organic vapor deposition (MOVPE) method, a hydrogenated vapor deposition (HVPE) method, a Molecular Beam Epitaxy (MBE) method, an ammonothermal method, a sodium flux method, and the like.
In the present invention, the bonding means that two sufficiently smooth and clean surfaces can form molecular adhesion under a vacuum environment, and the surface roughness can be 0.5nm Rms or less. It is generally considered that the smaller the surface roughness, the higher the bonding strength. In particular, it is also possible to apply pressure to the substrates during bonding, in a direction perpendicular to the plane of the substrates. The pressure applied may be constant or may vary over time.
In the present invention, the deposition method includes any one of electron beam evaporation, DC magnetron sputtering, and radio frequency sputtering.
In the present invention, for metals with higher melting points, the preferred deposition method is electron beam evaporation.
The utility model discloses in, it is right before the metal level deposit the surface of first base plate and/or the second base plate carries out the particle and shines to make surface activation.
In the utility model, before the joint, through carrying out particle irradiation surface activation to the surface that needs the joint, get rid of the oxide and the attachment on surface, the activation surface is in order to improve joint strength. The particles may be or contain a noble gas, for example argon Ar.
The utility model discloses in, the application of dismantling the base plate is including being used for making slim carborundum schottky diode, slim carborundum MOSFET or slim gallium nitride device.
Compared with the prior art, the utility model discloses following beneficial effect has at least:
the utility model provides a can dismantle base plate, can dismantle base plate when using the combination of base plate and supporting layer firm, only can realize dismantling through heating (the joint strength between base plate and the supporting layer reduces more than 50% after the heating) and simple energy application after the use, easy and simple to handle, easily carry out the industrialization and use.
Drawings
Fig. 1 is a schematic structural diagram of a detachable substrate provided by the present invention;
fig. 2 is a schematic view of a process for manufacturing a thin silicon carbide schottky diode according to application example 1 of the present invention;
fig. 3 is a schematic flow chart of manufacturing a thin silicon carbide MOSFET (first type) according to application example 2 of the present invention;
fig. 4 is a schematic view of a process for manufacturing a thin silicon carbide MOSFET (second type) according to application example 3 of the present invention;
fig. 5 is a schematic view of a process for manufacturing a thin gan device according to application example 4 of the present invention;
in the figure: 1-a first substrate, 2-a metal layer, 3-a second substrate.
The present invention will be described in further detail below. However, the following examples are only simple examples of the present invention, and do not represent or limit the scope of the present invention, which is defined by the appended claims.
Detailed Description
To better illustrate the present invention, facilitating the understanding of the technical solutions of the present invention, typical but not limiting embodiments of the present invention are as follows:
example 1
The present embodiment provides a detachable substrate, the structure of which is shown in fig. 1, the detachable substrate includes a first substrate 1, a metal layer 2, and a second substrate 3, which are connected in sequence, where the first substrate 1 and the second substrate 3 are silicon carbide layers, and the metal layer is a Ni layer.
Example 2
The embodiment provides a detachable substrate, the structure of which is shown in fig. 1, the detachable substrate includes a first substrate 1, a metal layer 2 and a second substrate 3 that are connected in sequence, the first substrate 1 and the second substrate 3 respectively and independently include a silicon carbide layer, the silicon carbide layer is disposed on one side of the metal layer 2, the first substrate 1 and the second substrate 3 respectively and independently are silicon carbide layers, and the metal layer 2 is a Ni layer.
Example 3
The embodiment provides a detachable substrate, the structure of which is shown in fig. 1, the detachable substrate includes a first substrate 1, a metal layer 2 and a second substrate 3 that are connected in sequence, the first substrate 1 and the second substrate 3 respectively and independently include a silicon carbide layer, the silicon carbide layer is disposed on one side of the metal layer 2, the first substrate 1 and the second substrate 3 respectively and independently are gallium nitride layers, and the metal layer 2 is a Ni layer.
Application example 1
The present embodiment provides a detachable substrate, which is applied to manufacture a thin silicon carbide schottky diode, and the process of the detachable substrate is as shown in fig. 2, and specifically includes:
(A) preparing a device silicon carbide substrate 20 and a supporting silicon carbide substrate 10; the device silicon carbide substrate 20 comprises a single crystal silicon carbide layer 21 and an epitaxial silicon carbide layer 22 epitaxially grown thereon; an inexpensive single crystal or polycrystalline substrate can be used for supporting the silicon carbide substrate;
(B) forming a metal layer 23 on the epitaxial silicon carbide layer 22 of the device silicon carbide substrate 20 and a metal layer 13 on one surface of the supporting silicon carbide substrate; prior to forming the metal layers 22 and 23, the surface of the epitaxial silicon carbide layer 22 and the surface of the supporting silicon carbide substrate may be surface activated to increase the bonding force between the metal layer and the substrate, the metal layer being nickel Ni;
(C) bonding the supporting silicon carbide substrate 10 and the device silicon carbide substrate 20 through the metal layers to form a substrate assembly, and bonding the metal layers 13 and 23 to form an interface layer 31; prior to bonding, surface activation of the metal layer on the support silicon carbide substrate 20, the metal layer on the device silicon carbide substrate 10, to improve bond strength;
(D) thinning one surface of the silicon carbide substrate 20 of the device, which is close to the single crystal silicon carbide layer 21, wherein the single crystal silicon carbide layer 21 is completely or partially removed after thinning, and the thinning method comprises grinding and polishing;
(E) applying an ohmic contact material 24 to one face of the device silicon carbide substrate, the ohmic contact material being Ni/Au;
(F) performing heat treatment to change the properties of the ohmic contact material 24 to form an ohmic contact layer 28 on the surface, and to react the metal and the silicon carbide between the silicon carbide substrate 10 and the device silicon carbide substrate 20 to form silicide and carbon; the bonding strength of the new interface layer 32 is reduced to a detachable level; the thermally treated assembly has an ohmic contact layer 28 on the surface, and has silicide and precipitated carbon between the support silicon carbide substrate 10 and the device silicon carbide substrate 20;
(G) fixing one surface of the ohmic contact layer 28 of the assembly after the heat treatment on the carrier substrate 50 with an adhesive 51; then, the support silicon carbide substrate 10 and the device silicon carbide substrate 20 are detached along the interface layer 32; in this case, the device silicon carbide substrate 10 is thin, but is fixed to the carrier substrate, and thus can maintain mechanical stability;
(H) removing residual silicide and carbon on the epitaxial silicon carbide layer 22 of the device silicon carbide substrate 20 by polishing and cleaning;
(I) an electronic device structure 25 is fabricated on the epitaxial silicon carbide layer 22 to yield the final thin silicon carbide schottky diode.
Application example 2
The present embodiment provides a detachable substrate, which is applied to manufacturing a thin silicon carbide MOSFET device, and the flow of the detachable substrate is as shown in fig. 3, and specifically includes:
(A) the device silicon carbide substrate 220 comprises a single crystal silicon carbide layer 221 and an epitaxial silicon carbide layer 222 epitaxially grown thereon, an electronic device structure 225 having been formed in the epitaxial silicon carbide layer 222, the electronic device structure may be a source of a MOSFET;
(B) forming an insulating protection layer 226 to cover the device structure 225 and make the surface of the insulating protection layer flat;
(C) forming a silicon carbide layer 227 on the insulating protection layer 226, and forming a metal layer 223 thereon; preparing a silicon carbide substrate 210 to be supported, and forming a metal layer 213 on one surface thereof, wherein the metal is nickel; prior to forming the metal layer, the surface of the support silicon carbide substrate 210 and the surface of the silicon carbide layer 227 of the device silicon carbide substrate 220 may be subjected to a surface activation treatment;
(D) bonding the metal layer 213 and the metal layer 223 to form an interface layer 231; surface activating the surface of the metal layer prior to bonding;
(E) thinning one surface of the single crystal silicon carbide layer 221 of the silicon carbide substrate 220 of the device, and after thinning, completely or partially removing the single crystal silicon carbide layer 221, wherein the thinning method comprises grinding and polishing;
(F) an ohmic contact material 224 is applied to one face of the device silicon carbide substrate. The ohmic contact material comprises Ti/Ni/Au;
(G) performing a thermal process to change the properties of the ohmic contact material 224 to form an ohmic contact layer 228 on the surface, and to react the metal and the silicon carbide between the supporting silicon carbide substrate 210 and the device silicon carbide substrate 220 to form silicide and carbon; the bonding strength of the new interface layer 232 is reduced to a detachable level; the thermally treated assembly has an ohmic contact layer 228 on the surface, with silicide and precipitated carbon between the support silicon carbide substrate 210 and the device silicon carbide substrate 220;
(H) securing one side of the ohmic contact layer 228 of the heat treated assembly to the carrier substrate 250 with an adhesive 251, and then detaching the support silicon carbide substrate 210 and the device silicon carbide substrate 220 along the interface layer 232; in this case, the device silicon carbide substrate 210 is thin but fixed to the carrier substrate, and thus can maintain mechanical stability;
(I) removing residual silicide and carbon on the silicon carbide layer 227, and then removing the silicon carbide layer 227, wherein the removing method comprises polishing and cleaning; forming a gate electrode 229 on the insulating protection layer 226, and finally forming a thin silicon carbide MOSFET including the source electrode 225, the gate electrode 229, and the ohmic contact layer 228 as a drain electrode; s, G, D denotes source, gate and drain respectively.
Application example 3
The present embodiment provides a detachable substrate, which is applied to manufacture a thin silicon carbide MOSFET, and the flow of the detachable substrate is as shown in fig. 4, and specifically includes:
(A) device silicon carbide substrate 320 comprises a single crystal silicon carbide layer 321 and an epitaxial silicon carbide layer 322 epitaxially grown thereon, an electronic device structure 325 has been formed in epitaxial silicon carbide layer 322, which may be the source of a MOSFET;
(B) an insulating protection layer 326 is formed to cover the device structure 325 and make the surface of the insulating protection layer flat. The surface of the insulating protective layer 326 is fixed to the first substrate 340 via an adhesive layer 341; thinning one surface of the single crystal silicon carbide layer 321 of the device silicon carbide substrate 320; after thinning, the single crystal silicon carbide layer 321 is removed in whole or in part; the thinning method comprises a laser cutting mode;
(C) a metal layer 323 is formed on the single-crystal silicon carbide layer 321. Preparing a silicon carbide substrate 310 to be supported, and forming a metal layer 313 on one surface of the silicon carbide substrate, wherein the metal is nickel; prior to forming the metal layer, the surface of single-crystal silicon carbide layer 321 that supports silicon carbide substrate 310 and device silicon carbide substrate 320 is subjected to surface activation treatment;
bonding the metal layer 313 and the metal layer 323 to form an interface layer 331; surface activating the surface of the metal layer prior to bonding;
(D) removing the first substrate 340 to obtain a combined body;
(E) performing a thermal treatment such that the metal and silicon carbide between supporting silicon carbide substrate 310 and device silicon carbide substrate 320 react to form a silicide and carbon; the bonding strength of the new interface layer 332 is reduced to a detachable level;
(F) bonding the assembly heat-treated in step E to a second substrate 370 via an adhesive layer 371; then, support silicon carbide substrate 310 and device silicon carbide substrate 320 are detached along interface layer 332; in this case, although the device silicon carbide substrate 310 is thin, it is fixed to the second substrate 370, and thus mechanical stability is maintained;
(G) the interface layer 332 remaining after detachment includes a metal silicide, on which an ohmic contact electrode 343 including metallic aluminum Al is formed;
(H) fixing the contact electrode 343 to the carrier substrate 380 via the adhesive layer 381; then, the second substrate 370 is detached;
(I) a gate electrode 329 is formed on the insulating protective layer 326, and finally a thin silicon carbide MOSFET including the source electrode 325, the gate electrode 329, and the ohmic contact electrode 343 as a drain electrode is formed.
Application example 4
The present embodiment provides a detachable substrate, the flow of which is shown in fig. 5, where the detachable substrate is applied to manufacturing a thin gallium nitride device, and specifically includes:
(A) preparing a gallium nitride substrate 420 of a device, and forming a pre-buried weakening layer 421 at a certain depth from one surface, wherein the gallium nitride thin layer with the depth can be transferred to another substrate; the method for forming the weakening layer comprises ion implantation;
(B) forming a silicon carbide layer 422 on one surface of the device gallium nitride substrate, and then forming a metal layer 423 on the silicon carbide layer 422; preparing a supporting gallium nitride substrate 410, forming a silicon carbide layer 412 on one surface thereof, and then forming a metal layer 413 on the silicon carbide layer 412, the metal being nickel; performing surface activation treatment on the surfaces of the silicon carbide layers 412 and 422 before forming the metal layer;
(C) bonding the metal layers 413 and 423 to form an interface layer 431; surface activating the surface of the metal layer prior to bonding;
(D) separating the gallium nitride substrate 420 of the device along the weakened layer 421, transferring the thin gallium nitride single crystal layer to the assembly, and reusing the rest part;
(E) epitaxially growing an epitaxial layer 424 on the device gallium nitride substrate 420 by metal organic vapor deposition (MOVPE); the epitaxial layer 424 is provided with a GaN layer and an AlGaN layer, the epitaxial growth temperature is 1000 ℃, and simultaneously, the metal of the interface layer 431 and the silicon carbide react to form silicide and carbon; the bonding strength of the new interface layer 432 is reduced to a detachable level;
(F) forming a device structure 425 on the epitaxial layer 424;
(G) forming a passivation layer 426 on device structure 425, passivation layer 426 covering device structure 425;
(H) bonding the passivation layer 426 to the carrier substrate 460 and then detaching the supporting gallium nitride substrate 410 and the device gallium nitride substrate 420 along the interface layer 432; at this time, the device gan substrate 420 is thin but is fixed on the carrier substrate 460, so that it can be mechanically stable;
(I) removing residual silicide and carbon on the silicon carbide layer 422, and then removing the silicon carbide layer 422, wherein the removing method comprises polishing and cleaning;
(J) the device gallium nitride substrate 420 is bonded to the high thermal conductivity substrate 480 to form the final gallium nitride device. The highly thermally conductive substrate 480 may be a metal, diamond, silicon nitride, etc. to effectively dissipate heat generated by the device structure 425;
(K) the surface of the device silicon nitride substrate 420 may also be formed into ohmic contact electrode 485 to form the final gallium nitride device.
The applicant states that the present invention is described by the above embodiments, but the present invention is not limited to the above detailed structural features, i.e. the present invention can be implemented only by relying on the above detailed structural features. It should be understood by those skilled in the art that any modifications to the present invention, such as equivalent replacement of selected parts, addition of auxiliary parts, selection of specific modes, etc., all fall within the scope of protection and disclosure of the present invention.
The above detailed description describes the preferred embodiments of the present invention, but the present invention is not limited to the details of the above embodiments, and the technical idea of the present invention can be within the scope of the present invention, and can be right to the technical solution of the present invention, and these simple modifications all belong to the protection scope of the present invention.
It should be noted that the various technical features described in the above embodiments can be combined in any suitable manner without contradiction, and in order to avoid unnecessary repetition, the present invention does not need to describe any combination of the features.
In addition, various embodiments of the present invention can be combined arbitrarily, and the disclosed content should be regarded as the present invention as long as it does not violate the idea of the present invention.
Claims (4)
1. The utility model provides a can dismantle base plate, its characterized in that, can dismantle base plate is including the first base plate, metal level and the second base plate that connect gradually, first base plate with the second base plate includes at least one deck carborundum layer, carborundum layer set up in metal level one side, and/or first base plate and/or the second base plate is carborundum base plate.
2. The detachable substrate according to claim 1, wherein the metal layer has a thickness of 1 to 100 nm.
3. The removable substrate of claim 1, wherein the metal layer comprises any one of a W layer, Hf layer, Nb layer, Ni layer, V layer, Mg layer, Ti layer, Zr layer, Mo layer, Ta layer, Co layer, Fe layer, Cr layer, or Cu layer.
4. The removable substrate of claim 1, wherein the first substrate and the second substrate further comprise a semiconductor substrate, a metal substrate, or a plastic substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220857157.6U CN217306510U (en) | 2022-04-13 | 2022-04-13 | Detachable substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220857157.6U CN217306510U (en) | 2022-04-13 | 2022-04-13 | Detachable substrate |
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| Publication Number | Publication Date |
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| CN217306510U true CN217306510U (en) | 2022-08-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202220857157.6U Active CN217306510U (en) | 2022-04-13 | 2022-04-13 | Detachable substrate |
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| CN (1) | CN217306510U (en) |
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- 2022-04-13 CN CN202220857157.6U patent/CN217306510U/en active Active
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