CN217280826U - LED chip - Google Patents
LED chip Download PDFInfo
- Publication number
- CN217280826U CN217280826U CN202220995913.1U CN202220995913U CN217280826U CN 217280826 U CN217280826 U CN 217280826U CN 202220995913 U CN202220995913 U CN 202220995913U CN 217280826 U CN217280826 U CN 217280826U
- Authority
- CN
- China
- Prior art keywords
- electrode
- type
- electrodes
- extension
- expansion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Led Devices (AREA)
Abstract
The utility model provides a LED chip, through setting up the second type extended electrode has a middle extended electrode, the other second type extended electrodes with the middle extended electrode as the jackshaft two by two distribute in the both sides of middle extended electrode; the first type expansion electrodes are distributed on two sides of the middle expansion electrode in pairs by taking the middle expansion electrode as a middle shaft; and the first type extension electrode and the rest of the second type extension electrodes are alternately distributed on two sides of the middle extension electrode. Therefore, when current flows in through the second electrode (namely the P electrode) and then preferentially passes through the middle extension electrode, the radiation recombination luminescence of electrons and holes is rapidly realized; meanwhile, the first type extension electrode and the second type extension electrode are alternately and uniformly arranged on two sides of the middle extension electrode of the second electrode, so that the tendency of current concentration in the middle extension electrode can be alleviated, and the current can be uniformly diffused on the light-emitting table surface.
Description
Technical Field
The utility model relates to a light emitting diode field especially relates to a LED chip.
Background
With the rapid development of the LED technology and the gradual improvement of the LED lighting effect, the application of the LED is more and more extensive, and people pay more attention to the development prospect of the LED on the display screen. The LED chip is used as a core component of the LED lamp, has the function of converting electric energy into light energy, and specifically comprises an epitaxial wafer and an N-type electrode and a P-type electrode which are respectively arranged on the epitaxial wafer. The epitaxial wafer comprises a P-type semiconductor layer, an N-type semiconductor layer and an active layer located between the N-type semiconductor layer and the P-type semiconductor layer, when current passes through the LED chip, holes in the P-type semiconductor and electrons in the N-type semiconductor move to the active layer and are combined in the active layer, and therefore the LED chip emits light.
With the increasing demand of the market for the brightness of the light emitting diode, the size of the chip is made larger and larger, the driving current is also increased, and the high-power LED is obtained. The chip structure needs to be continuously improved and optimized; at present, a chip structure optimized by various electrodes becomes a main stream structure of a super-brightness chip; however, there are problems of current crowding of the electrodes and poor reliability.
In view of the above, in order to overcome the above-mentioned defects of the LED chip in the prior art, the present inventors have specially designed an LED chip, and have resulted from this.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a LED chip to solve the crowded and electrode reliability's of LED chip electric current problem.
In order to realize the purpose, the utility model discloses a technical scheme as follows:
an LED chip, comprising:
a substrate;
the epitaxial lamination is arranged on the surface of the substrate and at least comprises a first type semiconductor layer, an active region and a second type semiconductor layer which are sequentially stacked along a first direction, and a local region of the epitaxial lamination is etched to a part of the first type semiconductor layer to form a groove and a table top; the first direction is perpendicular to the substrate and directed from the substrate to the epitaxial stack;
a first electrode stacked on an exposed portion of the groove;
a second electrode laminated on a surface of the mesa;
the first electrode is provided with a first type extended electrode which is connected with the first electrode and extends along the direction of the second electrode in a top view; the second electrode is provided with a plurality of second type expansion electrodes which are connected with the second electrode and extend along the direction of the first electrode;
wherein the number of the second type extension electrodes is odd; the second type expansion electrodes are provided with a middle expansion electrode, and the rest second type expansion electrodes are distributed on two sides of the middle expansion electrode in pairs by taking the middle expansion electrode as a middle shaft;
the number of the first type expansion electrodes is even, and the first type expansion electrodes are distributed on two sides of the middle expansion electrode in pairs by taking the middle expansion electrode as a middle shaft; and the first type extension electrode and the rest of the second type extension electrodes are alternately distributed on two sides of the middle extension electrode.
Preferably, the second type extension electrode has the middle extension electrode, and the rest of the second type extension electrodes are distributed on two sides of the middle extension electrode with the middle extension electrode as a symmetry axis.
Preferably, the first type extension electrodes are distributed on two sides of the middle extension electrode by taking the middle extension electrode as a symmetry axis.
Preferably, in an extending direction from the second electrode to the first electrode, a distance between each of the second type spreading electrodes and the middle spreading electrode gradually increases.
Preferably, a distance between each of the second type extension electrodes and the adjacent first type extension electrode is gradually increased.
Preferably, in the extending direction from the second electrode to the first electrode, the thickness of the second type expansion electrode is gradually reduced, and the lowest thickness is at least over half of the highest thickness.
Preferably, in the extending direction from the first electrode to the second electrode, the thickness of the first type extension electrode is gradually reduced, and the lowest thickness at least exceeds half of the highest thickness.
Preferably, in the extending direction from the second electrode to the first electrode, the thicknesses of the middle extension electrode and the rest of the second type extension electrodes are gradually reduced, and the lowest thickness at least exceeds half of the highest thickness.
Preferably, the number of the second type extension electrodes is 3, and the number of the first type extension electrodes is 2.
Preferably, the device further comprises a passivation layer, wherein the passivation layer covers the epitaxial stack and has a first through hole and a second through hole, the first through hole corresponds to the first electrode, and the second through hole corresponds to the second electrode.
Preferably, the first type semiconductor layer includes an N-type semiconductor layer, and the second type semiconductor layer includes a P-type semiconductor layer.
Preferably, the epitaxial stack has at least one substrate exposed portion extending from the second type semiconductor layer to the substrate through the active region and the first type semiconductor layer, wherein the passivation layer is stacked on the substrate in such a manner as to be maintained at the substrate exposed portion.
Preferably, the exposed part of the substrate surrounds the periphery of the epitaxial lamination; and the passivation layer is laminated on the substrate in a manner of being kept at the exposed part of the substrate and surrounds the periphery of the epitaxial lamination layer.
According to the above technical solution, the LED chip provided by the present invention is provided with the first electrode having the first type extension electrode connected thereto and extending along the direction of the second electrode; the second electrode is provided with a plurality of second type expansion electrodes which are connected with the second electrode and extend along the direction of the first electrode; wherein the number of the second type extension electrodes is odd; the second type expansion electrodes are provided with a middle expansion electrode, and the rest second type expansion electrodes are distributed on two sides of the middle expansion electrode in pairs by taking the middle expansion electrode as a middle shaft; the number of the first type expansion electrodes is even, and the first type expansion electrodes are distributed on two sides of the middle expansion electrode in pairs by taking the middle expansion electrode as a middle shaft; and the first type extension electrode and the rest of the second type extension electrodes are alternately distributed on two sides of the middle extension electrode. Therefore, when current flows in through the second electrode (namely the P electrode) and then preferentially passes through the middle extension electrode, the radiation recombination luminescence of electrons and holes is rapidly realized; meanwhile, the first type extension electrode and the second type extension electrode are alternately and uniformly arranged on two sides of the middle extension electrode of the second electrode, so that the tendency of current concentration in the middle extension electrode can be relieved, and the current can be uniformly diffused on the light-emitting table surface. Therefore, based on the structure, the current crowding phenomenon caused by large driving current is solved, and the external quantum efficiency of the LED is effectively improved.
Secondly, in the extending direction from the second electrode to the first electrode, the distance between each second type extension electrode and the middle extension electrode is gradually increased, so that the current can be further diffused to the edge of the epitaxial lamination, and the LED chip can emit light more uniformly. Meanwhile, the thickness of the second type extension electrode is gradually reduced, and the lowest thickness at least exceeds the thickness setting of half of the highest thickness, so that the current crowding can be reduced, the current extension can be increased, and the product cost can be reduced.
According to the technical scheme, the utility model provides a preparation method of LED chip when realizing the beneficial effect of above-mentioned LED chip, its technology simple manufacture is convenient, the productization of being convenient for.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an LED chip according to an embodiment of the present invention;
fig. 2 is a schematic top view of an LED chip provided in an embodiment of the present invention;
fig. 3 is a schematic top view of an LED chip according to an embodiment of the present invention;
fig. 4.1 to fig. 4.7 are schematic structural diagrams corresponding to steps of a method for manufacturing an LED chip provided in an embodiment of the present invention;
the symbols in the drawings illustrate that: 1. the semiconductor device comprises a substrate, 1.1, a substrate exposed part, 2, a first type semiconductor layer, 3, an active region, 4, a second type semiconductor layer, 5, a passivation layer, 6, a second electrode, 6.1, a middle extension electrode, 6.2, a second type extension electrode, 7, a first electrode, 7.1, a first type extension electrode, 8, a table board, 9 and a groove.
Detailed Description
In order to make the contents of the present invention clearer, the contents of the present invention will be further explained with reference to the accompanying drawings. The present invention is not limited to this specific embodiment. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
As shown in fig. 1, an LED chip includes:
a substrate 1;
the epitaxial lamination is arranged on the surface of the substrate 1 and at least comprises a first type semiconductor layer 2, an active region 3 and a second type semiconductor layer 4 which are sequentially stacked along a first direction, and a partial region of the epitaxial lamination is etched to a part of the first type semiconductor layer 2 to form a groove 9 and a table top 8; the first direction is perpendicular to the substrate 1 and directed from the substrate 1 to the epitaxial stack;
a first electrode 7 laminated on an exposed portion of the groove 9;
a second electrode 6 laminated on the surface of the mesa 8;
the first electrode 7 has a first type extended electrode 7.1 which is connected with the first electrode and extends along the direction of the second electrode 6 in a plan view; the second electrode 6 is provided with a plurality of second type expansion electrodes 6.2 which are connected with the second electrode and extend along the direction of the first electrode 7;
wherein, the number of the second type extended electrodes 6.2 is odd; the second type expansion electrode 6.2 is provided with a middle expansion electrode 6.1, and the rest second type expansion electrodes 6.2 are distributed on two sides of the middle expansion electrode 6.1 in pairs by taking the middle expansion electrode 6.1 as a middle shaft;
the number of the first type expansion electrodes 7.1 is even, and the first type expansion electrodes 7.1 are distributed on two sides of the middle expansion electrode 6.1 in pairs by taking the middle expansion electrode 6.1 as a middle shaft; and the first type extension electrodes 7.1 and the rest of the second type extension electrodes 6.2 are alternately distributed on both sides of the middle extension electrode 6.1.
It should be noted that the embodiment of the present invention does not limit the number of the second type extension electrodes 6.2, as long as the total number is an odd number, or the number of the first type extension electrodes 7.1, as long as the total number is an even number; as an example of this embodiment, as shown in fig. 2 and fig. 3, the number of the first type extension electrodes 7.1 is 2, and the number of the second type extension electrodes 6.2 is 3.
It is worth mentioning that the type of the substrate 1 is not limited in the LED chip of the present embodiment, for example, the substrate 1 may be, but is not limited to, a sapphire substrate 1, a silicon substrate 1, or the like. In addition, the types of the first type semiconductor layer 2, the active region 3 and the second type semiconductor layer 4 of the epitaxial stack may also be not limited in the LED chip of the present embodiment, for example, the first type semiconductor layer 2 may be, but is not limited to, an N type gallium nitride layer, and correspondingly, the second type semiconductor layer 4 may be, but is not limited to, a P type gallium nitride layer;
it is worth mentioning that the material of the passivation layer 5 may be, but is not limited to, SiO2 (silicon dioxide).
In addition, the first electrode 7 and the second electrode 6 may be, but are not limited to, gold tin electrodes.
As shown in fig. 2, in the embodiment of the present invention, the second type extension electrode 6.2 has a middle extension electrode 6.1, and the other second type extension electrodes 6.2 are distributed on two sides of the middle extension electrode 6.1 with the middle extension electrode 6.1 as a symmetry axis.
In the embodiment of the present invention, the first type extension electrode 7.1 uses the middle extension electrode 6.1 as the symmetric axis and two of them are distributed on the two sides of the middle extension electrode 6.1.
As shown in fig. 3, in another embodiment of the present invention, in the extending direction of the second electrode 6 to the first electrode 7, the distance d between each second type extended electrode 6.2 and the middle extended electrode 6.1 is gradually increased.
Further, the distance between each second type extension electrode 6.2 and the adjacent first type extension electrode 7.1 is gradually increased.
In the embodiment of the present invention, in the extending direction from the second electrode 6 to the first electrode 7, the thickness of the second type extension electrode 6.2 is gradually reduced, and the minimum thickness at least exceeds half of the maximum thickness.
In the embodiment of the present invention, in the extending direction of the first electrode 7 to the second electrode 6, the thickness of the first type extension electrode 7.1 is gradually reduced, and the minimum thickness exceeds half of the maximum thickness at least.
In the embodiment of the present invention, in the extending direction from the second electrode 6 to the first electrode 7, the thickness of the middle extension electrode 6.1 and the rest of the second type extension electrodes 6.2 is gradually reduced, and the minimum thickness at least exceeds half of the maximum thickness.
The embodiment of the present invention provides a passivation layer 5, wherein the passivation layer 5 covers the epitaxial lamination layer and has a first through hole and a second through hole, the first through hole corresponds to the first electrode 7, and the second through hole corresponds to the second electrode 6.
In the embodiment of the present invention, the first type semiconductor layer 2 includes an N type semiconductor layer, and the second type semiconductor layer 4 includes a P type semiconductor layer.
In an embodiment of the invention, the epitaxial stack has at least one exposed substrate portion 1.1, which extends from the second type semiconductor layer 4 through the active region 3 and the first type semiconductor layer 2 to the substrate 1, wherein the passivation layer 5 is stacked on the substrate 1 in such a way that it is held at the exposed substrate portion 1.1.
In the embodiment of the utility model, the substrate bare part 1.1 surrounds the periphery of the epitaxial lamination; and a passivation layer 5 is laminated on the substrate 1 in such a manner as to be held on the substrate exposed portion 1.1, and surrounds the periphery of the epitaxial stack.
The embodiment of the utility model provides a preparation method of LED chip is still provided, preparation method includes following step:
step S01, as shown in fig. 4.1, providing a substrate 1;
step S02, as shown in fig. 4.2, stacking an epitaxial stack on the surface of the substrate 1, where the epitaxial stack includes a first type semiconductor layer 2, an active region 3, and a second type semiconductor layer 4 stacked in sequence along a first direction, the first direction being perpendicular to the substrate 1 and pointing from the substrate 1 to the epitaxial stack;
step S03, as shown in fig. 4.3, etching a local region of the epitaxial stack to a portion of the first-type semiconductor layer 2 to form a recess 9 and a mesa 8;
step S04, as shown in fig. 4.4, a first type extended electrode 7.1 is formed in the groove 9, and a second type extended electrode 6.2 is formed on the mesa 8, wherein the first type extended electrode 7.1 and the second type extended electrode 6.2 extend in opposite directions;
in a top view, as shown in fig. 2, the number of the second type spreading electrodes 6.2 is odd; the second type expansion electrode 6.2 is provided with a middle expansion electrode 6.1, and the rest second type expansion electrodes 6.2 are distributed on two sides of the middle expansion electrode 6.1 in pairs by taking the middle expansion electrode 6.1 as a middle shaft;
the number of the first type expansion electrodes 7.1 is even, and the first type expansion electrodes 7.1 are distributed on two sides of the middle expansion electrode 6.1 in pairs by taking the middle expansion electrode 6.1 as a middle shaft; the first type extension electrodes 7.1 and the rest second type extension electrodes 6.2 are alternately distributed on two sides of the middle extension electrode 6.1;
step S05, as shown in fig. 4.5, deeply etching the edge of the epitaxial lamination to make it have a substrate bare portion 1.1;
step S06, as shown in fig. 4.6, growing a passivation layer 5, where the passivation layer 5 covers the epitaxial stack in a manner of being stacked on the substrate exposed portion 1.1; patterning the passivation layer 5 to form a first through hole and a second through hole, wherein the exposed part of the first through hole is a first type extended electrode 7.1, and the exposed part of the second through hole is a second type extended electrode 6.2;
step S07, as shown in fig. 4.7, fabricating the first electrode 7 and the second electrode 6; a first electrode 7 laminated on the first through hole; and a second electrode 6 laminated on the second through hole.
In the embodiment of the present invention, in the extending direction from the second electrode 6 to the first electrode 7, the distance between each second type extended electrode 6.2 and the middle extended electrode 6.1 is gradually increased; the distance between each second type extension electrode 6.2 and the adjacent first type extension electrode 7.1 is gradually increased.
In the embodiment of the present invention, in the extending direction from the first electrode 7 to the second electrode 6, the thickness of the first type extension electrode 7.1 is gradually reduced, and the lowest thickness at least exceeds half of the highest thickness;
in the direction of extension of the second electrode 6 to the first electrode 7, the thickness of the middle expansion electrode 6.1 and the remaining second type expansion electrodes 6.2 decreases gradually, and the lowest thickness exceeds at least half of the highest thickness.
In the embodiment of the utility model, the substrate bare part 1.1 surrounds the periphery of the epitaxial lamination; and a passivation layer 5 is laminated on the substrate 1 so as to be held on the substrate exposed portion 1.1, and surrounds the periphery of the epitaxial stack.
According to the above technical solution, the LED chip provided by the present invention is provided with the first electrode 7 having the first type extension electrode 7.1 connected thereto and extending along the direction of the second electrode 6; the second electrode 6 is provided with a plurality of second type expansion electrodes 6.2 which are connected with the second electrode and extend along the direction of the first electrode 7; wherein the number of the second type extension electrodes 6.2 is odd; the second type expansion electrode 6.2 is provided with a middle expansion electrode 6.1, and the other second type expansion electrodes 6.2 are distributed on two sides of the middle expansion electrode 6.1 pairwise by taking the middle expansion electrode 6.1 as a middle shaft; the number of the first type expansion electrodes 7.1 is even, and the first type expansion electrodes 7.1 are distributed on two sides of the middle expansion electrode 6.1 pairwise by taking the middle expansion electrode 6.1 as a middle shaft; and the first type extension electrode 7.1 and the rest of the second type extension electrodes 6.2 are alternately distributed on both sides of the middle extension electrode 6.1. Therefore, when current flows in through the second electrode 6 (namely the P electrode), the current preferentially passes through the middle extension electrode 6.1, and the radiation recombination luminescence of electrons and holes is rapidly realized; meanwhile, the first type extension electrode 7.1 and the second type extension electrode 6.2 are alternately and uniformly arranged on both sides of the middle extension electrode 6.1 of the second electrode 6, so that the tendency of current concentration in the middle extension electrode 6.1 can be alleviated, and the current can be uniformly diffused in the light-emitting table surface 8. Therefore, based on the structure, the current crowding phenomenon caused by large driving current is solved, and the external quantum efficiency of the LED is effectively improved.
Secondly, in the extending direction from the second electrode 6 to the first electrode 7, the distance between each second type extension electrode 6.2 and the middle extension electrode 6.1 is gradually increased, so that the current can be further diffused to the edge of the epitaxial lamination, and the LED chip can emit light more uniformly. Meanwhile, the thickness of the second type extension electrode 6.2 is gradually reduced, and the lowest thickness at least exceeds the thickness setting of half of the highest thickness, so that the current crowding can be reduced, the current extension is increased, and the product cost can be reduced.
According to the above technical scheme, the utility model provides a preparation method of LED chip when realizing the beneficial effect of above-mentioned LED chip, its technology simple manufacture is convenient, the productization of being convenient for.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in an article or device that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. An LED chip, comprising:
a substrate;
the epitaxial lamination is arranged on the surface of the substrate and at least comprises a first type semiconductor layer, an active region and a second type semiconductor layer which are sequentially stacked along a first direction, and a local region of the epitaxial lamination is etched to a part of the first type semiconductor layer to form a groove and a table top; the first direction is perpendicular to the substrate and directed from the substrate to the epitaxial stack;
a first electrode stacked on an exposed portion of the groove;
a second electrode laminated on a surface of the mesa;
the first electrode is provided with a first type extended electrode which is connected with the first electrode and extends along the direction of the second electrode in a top view; the second electrode is provided with a plurality of second type expansion electrodes which are connected with the second electrode and extend along the direction of the first electrode;
wherein the number of the second type extension electrodes is odd; the second type expansion electrodes are provided with a middle expansion electrode, and the rest second type expansion electrodes are distributed on two sides of the middle expansion electrode in pairs by taking the middle expansion electrode as a middle shaft;
the number of the first type expansion electrodes is even, and the first type expansion electrodes are distributed on two sides of the middle expansion electrode in pairs by taking the middle expansion electrode as a middle shaft; and the first type extension electrode and the rest of the second type extension electrodes are alternately distributed on two sides of the middle extension electrode.
2. The LED chip of claim 1, wherein said second type spreading electrode has said middle spreading electrode, and the rest of said second type spreading electrodes are arranged two by two on both sides of the middle spreading electrode with said middle spreading electrode as a symmetry axis.
3. The LED chip of claim 1, wherein the first type of extension electrodes are disposed on two sides of the middle extension electrode with the middle extension electrode as a symmetry axis.
4. The LED chip of claim 1, wherein the spacing between each of said second-type spreading electrodes and said middle spreading electrode is gradually increased in the direction of extension of said second electrode to said first electrode.
5. The LED chip of claim 4, wherein each of said second type spreading electrodes is spaced apart from an adjacent one of said first type spreading electrodes by a gradually increasing distance.
6. The LED chip of claim 1, wherein said second type expansion electrode has a gradually decreasing thickness in a direction extending from said second electrode to said first electrode, and a lowest thickness at least over half of a highest thickness.
7. The LED chip of claim 1, wherein the thickness of the first type of extended electrode is gradually reduced in the direction of the extension of the first electrode to the second electrode, and the lowest thickness is at least more than half of the highest thickness.
8. The LED chip of claim 2, wherein said intermediate expansion electrode and the remaining second-type expansion electrodes have decreasing thicknesses in a direction of extension of said second electrode to said first electrode, and a lowest thickness exceeds at least half of a highest thickness.
9. The LED chip of claim 1, wherein the number of said second type spreading electrodes is 3, and the number of said first type spreading electrodes is 2.
10. The LED chip of claim 1, further comprising a passivation layer, wherein said passivation layer covers said epitaxial stack and has a first via and a second via, said first via corresponding to said first electrode and said second via corresponding to said second electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220995913.1U CN217280826U (en) | 2022-04-27 | 2022-04-27 | LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220995913.1U CN217280826U (en) | 2022-04-27 | 2022-04-27 | LED chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN217280826U true CN217280826U (en) | 2022-08-23 |
Family
ID=82877409
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202220995913.1U Active CN217280826U (en) | 2022-04-27 | 2022-04-27 | LED chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN217280826U (en) |
-
2022
- 2022-04-27 CN CN202220995913.1U patent/CN217280826U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8486734B2 (en) | Alternating current light-emitting device and fabrication method thereof | |
| EP2244309A1 (en) | Led package structure having the led and method for fabricating the led | |
| US20090114940A1 (en) | Light-Emitting Device | |
| JP2009502043A (en) | Blue light-emitting diode with uneven high refractive index surface for improved light extraction efficiency | |
| TW200835001A (en) | Light emitting diode with high electrostatic discharge and fabrication method thereof | |
| CN111564537B (en) | Micro light-emitting element and preparation method thereof | |
| US20100102295A1 (en) | Light emitting device | |
| KR100748247B1 (en) | Nitride semiconductor light emitting diode and method of manufacturing the same | |
| JP2014022401A (en) | Nitride semiconductor light-emitting element | |
| KR101047655B1 (en) | Light emitting device, method for fabricating the light emitting device, light emitting device package, and lighting system | |
| US9123560B2 (en) | Light emitting device having improved color rendition | |
| CN217280826U (en) | LED chip | |
| CN113169253A (en) | Micro light-emitting diode and manufacturing method thereof | |
| CN114695617A (en) | LED chip and manufacturing method thereof | |
| CN113809214B (en) | Flip-chip light emitting diode and light emitting device | |
| CN106992235B (en) | Light-emitting diode chip | |
| CN214226936U (en) | Semiconductor epitaxial structure and LED chip | |
| CN211455714U (en) | LED chip | |
| CN217507374U (en) | LED chip | |
| CN114530534A (en) | LED chip and preparation method thereof | |
| CN115832143A (en) | Flip-chip light emitting diode and light emitting device | |
| CN111370546A (en) | LED chip and preparation method thereof | |
| CN218101293U (en) | LED chip | |
| CN114744087A (en) | LED chip and preparation method thereof | |
| CN112768577A (en) | Semiconductor epitaxial structure, manufacturing method thereof and LED chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |