CN217230243U

CN217230243U - Device for manufacturing micro-electromechanical probe

Info

Publication number: CN217230243U
Application number: CN202220063690.5U
Authority: CN
Inventors: 蔡明聪; 吴坤育
Original assignee: Xuzhen Technology Co ltd
Current assignee: Xuzhen Technology Co ltd
Priority date: 2022-01-11
Filing date: 2022-01-11
Publication date: 2022-08-19
Anticipated expiration: 2032-01-11

Abstract

The utility model discloses a manufacturing installation of micro-electromechanical probe, include: a laser light source for providing a laser beam; a galvanometer scanning module having an X-Y optical scanning lens and an optical reflection lens; a vision module having a first beam splitter group; a translation stage having a working platform and at least X, Y two-axis displacement mechanism; the front surface of the substrate is coated with a workpiece for forming the micro-electromechanical probe attachment, and the workpiece is arranged on the working platform to carry out laser etching operation; the laser beam is reflected by the optical reflection lens, and then is subjected to angle shift of the X-Y optical scanning lens and the cooperative displacement of the displacement mechanism, so that laser spots are focused and projected to a desired irradiation point of the workpiece area by area and point by point, and the laser etching operation of removing the photoresist and the gasified adhesive layer in the manufacturing process of the micro-electromechanical probe is completed.

Description

Device for manufacturing micro-electromechanical probe

Technical Field

The present invention relates to a probe manufacturing apparatus, and more particularly to a micro electro mechanical system probe manufacturing apparatus by micro electro mechanical system process and laser etching.

Background

In a general semiconductor process, before completing wafer processing but not performing dicing packaging, a probe card is required to perform an electrical characteristic test on an IC at a wafer stage, and the test report can not only feed back the result to a front-end process for fine adjustment, but also ensure the yield of wafer processing; meanwhile, unqualified products can be eliminated, waste of a back-end packaging process is avoided, and the effects of reducing cost and increasing production energy are achieved. When testing, the probe on the probe card is contacted with the bonding Pad (Pad) or the Bump (Bump) on the IC chip to form a testing loop; and the signal sent by the tester is transmitted to the chip through the transmission of the probe, and then the chip feedback data is transmitted back to the tester for analysis and judgment, so as to detect whether the function of each grain on the wafer is normal or not.

In recent years, with the high integration of semiconductor chips, the bonding pads on the chips become finer and the pitch becomes finer, and the probe card of the testing device must be reduced in size, so that the probe manufactured by applying the micro electro mechanical process is generated. Second, micro electro mechanical Systems (abbreviated MEMS) is an industrial technology that integrates micro electronic technology with mechanical engineering, and its operation range is in micrometer scale, while the size of typical micro electro mechanical devices is between 20 micrometers and one millimeter.

Further, taiwan patent No. 202009496 "manufacturing method of MEMS probe for semiconductor inspection using laser", i.e. applying the micro-electromechanical process to manufacture the probe; the method comprises the following steps: 1. depositing a sacrificial layer on a substrate; 2. coating a photoresist on the sacrificial layer; 3. forming a photoresist pattern; 4. forming a metal layer; 5. removing the photoresist; 6. etching to remove the sacrificial layer and retain the supporting part; 7. fixing the probe by using an adhesive member; 8. cutting the support part by using laser; 9. the probe is detached from the adhesive member. FIG. 1A shows a substrate 910 on which a sacrificial layer 920 is deposited and then a photoresist 930 is applied; FIGS. 1B-1C show a method of forming a photoresist pattern 940 on a substrate by photolithography, depositing a conductive material to form a metal layer 950, and removing the photoresist to form a basket cavity 960; etching to remove the sacrificial layer 920 and leave the supporting portion 970, so that the metal layer 950 is supported; finally, the metal layer 950 of the probe is fixed by an adhesive member 980. Fig. 2A-2B illustrate the support 970 being cut by a laser and the probe 990 being finally separated from the adhesive member 980. The above steps are divided into two stages, and the sacrificial layer 920 and the support portion 970 are removed by etching, because the sacrificial layer 920 and the support portion 970 are both made of conductive materials, the etching operation consumes a long time and a large amount of electric power, and the support portion 970 often remains residual dust during the etching process, so that the surface of the probe loses smoothness, thereby affecting the accuracy of subsequent wafer detection; therefore, how to improve the quality and production efficiency of probe manufacturing becomes the subject of the active consideration of the present invention.

SUMMERY OF THE UTILITY MODEL

Accordingly, the main objective of the present invention is to improve the production speed of the probe and the quality of the probe by the micro electro mechanical process and the method of applying laser etching, so as to ensure the reliability and the benefit of the wafer inspection process.

To achieve the above object, the present invention provides a method for manufacturing a micro-electromechanical probe, comprising the steps of a) coating an adhesive layer on a surface of a substrate; step b) coating a seed crystal layer on the adhesive layer; step c), coating a photoresist layer with the thickness of 15-35 microns on the seed crystal layer; step d) forming a cavity with a plurality of probe arrangement patterns on the photoresist layer by a photoetching method of a photomask; step e) depositing a conductive material using an electroplating method to form a probe-shaped metal layer; step f) applying laser etching to remove the photoresist around the metal layer; step g), fixing the metal layer (probe) by using a positioning piece with viscosity; step h) applying laser etching to vaporize the adhesive layer; and step i) separating the probe from the positioning member.

In the preceding paragraph, the term "substrate" is used only for the probe process, and the material coated thereon can be removed or vaporized to disappear in the subsequent process without damaging the substrate; thus, the substrate is a reusable material; also, step b) refers to a seed layer, which is a seed crystal that is formed by adding insoluble additives, i.e., seed crystals, to accelerate or promote the growth of crystals of the crystalline form or the stereoisomeric enantiomers thereof in the crystallization process; in other words, the seed crystal is a small single crystal that can be placed in a saturated or supersaturated solution to grow large crystals. In addition, step c) is referred to a photoresist layer, and the photoresist layer is a mixed liquid which is sensitive to light and consists of three main components of photosensitive resin, sensitizer and solvent.

According to the features disclosed above, the material of the substrate in step a) of the present invention includes any one of ceramic, glass, metal, plastic and semiconductor wafer.

According to the characteristics of the previous disclosure, the adhesive material of step a) in the present invention can be metal or a combination of colloid and metal; the metal includes any one of copper, chromium, tungsten, nickel-chromium alloy, nickel-copper alloy, nickel-cobalt alloy, nickel-phosphorus alloy, lead and gold; the colloid includes any one of acryl, epoxy, polyimide and PET.

According to the characteristics of the previous disclosure, the positioning member of step g) of the present invention can be a glue film.

According to the feature of revealing before, the utility model discloses in this step f) and step h) laser etching for using one kind have large tracts of land laser beam scanning device, include: a laser light source, which uses a laser optical machine to provide a laser beam; a galvanometer scanning module, which is provided with an X-Y optical scanning lens and an optical reflecting lens and is arranged on the transmission path of the laser beam; a visual module having a first beam splitter set disposed between the laser source and the galvanometer scanning module; a translation stage, which is provided with a working platform and at least a displacement mechanism capable of performing X, Y two axial directions and is arranged below the galvanometer scanning module; and a workpiece with the front surface of the substrate coated with formed micro-electromechanical probe attachments, and the front surface of the substrate is upwards placed on the working platform to carry out the operation of removing the photoresist, or the back surface of the substrate is upwards placed on the working platform to carry out the operation of activating a chemical adhesion layer; the laser beam is reflected by the optical reflection lens and the angle of the X-Y optical scanning lens is transferred so as to realize the focusing of a laser spot and further project the laser spot onto a desired irradiation point of the workpiece; the laser beam further generates a response beam, then the response beam is reflected by the light receiving lens of the X-Y optical scanning lens and the optical reflection lens, and then enters the first spectroscope group for inspection and analysis, and the X-Y optical scanning lens and the displacement mechanism are driven to cooperatively displace, so that the laser beam irradiates one region by one region and one point by one point, and the laser etching operation of removing the photoresist or gasifying the adhesion layer is further completed.

According to the features disclosed in the present application, the wavelength of the laser beam is 355nm to 1070 nm.

In the utility model, an adhesive layer, a crystal seed layer and a photoresist layer are sequentially coated on the surface of a substrate; forming a cavity with a plurality of probe arrangement patterns in the photoresist layer by a photoetching method; electroplating and depositing a metal layer in the mold cavity; finally, removing the photoresist and then gasifying the adhesion layer by using a laser etching mode; because too much time course and electric power are not consumed in the laser etching process, and no debris is accumulated on the surface of the probe; therefore, the produced micro-electromechanical probe has quality and cost benefit.

Drawings

FIGS. 1A-1C are schematic diagrams illustrating a conventional pre-process for fabricating a micro-electromechanical probe.

FIGS. 2A-2B are schematic diagrams illustrating a post-fabrication process of a micro-electromechanical probe.

Fig. 3 is a block diagram illustrating the manufacturing steps of the present invention. .

Fig. 4 is an operation schematic diagram of step g of the present invention.

Fig. 5 is a schematic diagram of the state of the present invention completing step g.

Fig. 6 is an operation diagram of step h of the present invention.

Fig. 7 is a schematic view of the laser etching apparatus of the present invention.

Fig. 8 is a schematic view of the operation of the present invention for performing laser etching.

Fig. 9 is a schematic diagram of the state of the present invention after step h.

Description of reference numerals: 11-a substrate; 12-an adhesive layer; 13-a positioning element; 14-a probe; 20-a laser light source; 21-laser optical machine; 30-translation stage; 31-a working platform; 40-galvanometer scanning module; a 41-X-Y optical scanning lens; 42-an optical mirror plate; 50-a vision module; 51-a first beam splitting mirror group; 100-microscopic photoluminescence scanning device with large area; l1-laser beam; m-workpiece (i.e. substrate and its attachments); p-irradiation point; r1-response beam; s-irradiating the visual field area.

Detailed Description

First, please refer to fig. 3, which illustrates a method for manufacturing a micro-electromechanical probe according to the present invention, comprising: step a) coating an adhesive layer S10: coating an adhesive material on the surface of a substrate to form an adhesive layer; step b) coating seed layer (seed layer) S20: coating a single crystal seed material on the adhesion layer to form a seed layer; step c) coating a photoresist layer S30: coating a photoresist material on the seed crystal layer to form a photoresist layer with a thickness of 15-35 μm; step d) forming a probe arrangement pattern S40: forming a cavity with a plurality of probe arrangement patterns on the photoresist layer by using a photoetching method through a photomask; step e) forming a probe-shaped metal layer S50: depositing a conductive material which is the same as the single crystal seed in the mold cavity of the previous step by using an electroplating method to form a plurality of metal layers in the shape of probes; step f) removing the photoresist S60: irradiating from the front side of the substrate by laser etching to remove the photoresist around the metal layer; step g) immobilization of Probe S70: adhering a positioning piece with viscosity to the surface of the metal layer to fix the probe on the positioning piece; step h) vaporizing the adhesive layer S80: irradiating the adhesive layer from the back surface of the substrate by laser etching to evaporate and eliminate the adhesive material; step i) isolation probe S90: the probes are separated from the positioning member one by one.

In the present invention, the material of the substrate in step a) S10 includes any one of ceramic, glass, metal, plastic and semiconductor wafer. The adhesive material can be metal or the combination of colloid and metal; the metal includes any one of copper, chromium, tungsten, nickel-chromium alloy, nickel-copper alloy, nickel-cobalt alloy, nickel-phosphorus alloy, lead and gold; the colloid includes any one of acryl, epoxy, polyimide and PET.

FIGS. 4 to 5 are diagrams showing the status of the step g and the completion of the operation according to the present invention; in the processes of steps a-f, the probes 14 of the metal layer are formed on the surface of the substrate 11, and an adhesive layer 12 is present between the probes 14 and the substrate 11, and the photoresist originally present around the metal layer is removed; therefore, once the substrate 11 is separated in the subsequent process, the probes 14 will be scattered and fall off to cause damage; therefore, in step g, a positioning member 13 with viscosity is adhered to the surface of the metal layer, so that the probe 14 is fixed on the positioning member 13; the positioning member 13 of the present invention can be a plastic film, but not limited thereto.

FIG. 6 is a schematic view of the operation of gasifying the adhesive layer in step h of the present invention; the adhesive layer 12 is irradiated from the back of the substrate 11 by laser etching to evaporate the adhesive material; the utility model discloses in this laser etching's device be one kind and have large tracts of land laser beam scanning device 100, because the scanning head of the device will be thrown a wavelength and be 355nm ~ 1070 nm's laser beam and be used for shining this adhesion layer 12, and the base plate 11 that has attached to plural probe 14 then places in on the microscope carrier of the device, and with base plate 11 back up, and through the relative motion of scanning head and microscope carrier or a fixed mode that removes, then this adhesion layer 12 will be distinguished by the laser beam gradually and shine and the gasification disappears.

The laser etching in step f) and step h) of the present invention uses a laser beam scanning apparatus 100 having a large area, as shown in fig. 7, comprising: a laser source 20, which is a laser optical machine 21, for generating a laser beam L1 as an irradiation light source of the workpiece M (i.e. the substrate and the attachments thereon); a translation stage 30, disposed on the opposite side of the laser light source 20, having a working platform 31 for placing the workpiece M, and a displacement mechanism (not shown) capable of performing X, Y two axial displacements; the displacement mechanism of the present invention further comprises a Z-axis displacement function, so that the working platform 31 can be matched with the projection focal length of the laser beam L1 to raise or lower the height thereof; a galvanometer scanning module 40, disposed above the translation stage 30 and on the transmission path of the laser beam L1, and having an X-Y optical scanning lens 41 and an optical reflection lens 42, wherein the laser beam L1 is reflected by the optical reflection lens 42 to turn the horizontal projection direction thereof to the lower side, and then is focused by the X-Y optical scanning lens 41 to realize the focusing of the laser spot and generate the corresponding angle shift, the laser beam L1 is deflected and focused on the desired irradiation point of the workpiece M, so that the workpiece M generates a photoluminescence response beam R1, and the received light by the X-Y optical scanning lens 41 and the reflection by the optical reflection lens 42 transmit the response beam R1 toward the horizontal direction for analyzing the irradiation condition of the laser beam. A vision module 50 having a first beam splitter 51 located on the transmission path of the laser beam L1 and the response beam R1, so that the vision module 50 can be used to inspect the position and spot status of the laser beam L1 projected on the desired irradiation point and the response beam R1; and drives the X-Y optical scanning lens 41 and the displacement mechanism of the translation stage 30 to displace cooperatively, so that the laser beam is correspondingly projected onto a desired irradiation point, thereby completing the laser etching operation.

Please further refer to fig. 8, which illustrates a state of performing laser etching according to the present invention; wherein, the workpiece M (i.e. the substrate and the attachments thereon) is placed on the working platform 31, the laser optical machine 21 sends out a laser beam L1, which is refracted by the optical reflection lens 42, so that the laser beam L1 in the horizontal direction is turned to the working platform 31 below, the setting state of the relevant components is inspected and adjusted by the vision module 50, and then the working platform 31 of the translation stage 30 is driven to perform the displacement of the region to be irradiated, after the irradiation region is positioned, the angle deflection is performed by the optical reflection lens 42 of the galvanometer scanning module 40, so that the laser beam L1 is projected on the desired irradiation points one by one, and the irradiation region in the operation can be divided into 9 irradiation points; in the figure, each square represents the irradiation field area S of the X-Y optical scanning lens 41 after the translation stage 30 is displaced, and the laser beam L1 is projected onto the desired irradiation point P one by one from the 1 st point at the upper left corner to the 9 th point at the lower right corner through the respective deflection of the optical reflection lens 42, and the received light from the X-Y optical scanning lens 41 and the reflection of the optical reflection lens 42 are monitored by the vision module 50 after the photoluminescence response beam R1 of each point irradiates thereon; after the irradiation of each irradiation point P in the irradiation field S is completed, the translation stage 30 is shifted to a new irradiation field S again, and the irradiation of each irradiation point P is repeated one by one; this is continuously repeated in each irradiation field region S one by one, and the laser etching operation is completed.

FIG. 9 is a schematic view showing the completion of the step of vaporizing the adhesive layer according to the present invention; since the probes 14 are fixed on the spacers 13 and the adhesive layer 12 between the probes 14 and the substrate 11 is vaporized and disappeared by being irradiated with the laser beam point by point, the probes 14 and the substrate 11 are separated, but are still fixed on the spacers 13.

While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made without departing from the spirit and scope of the invention.

Claims

1. An apparatus for manufacturing a microelectromechanical probe, comprising:

a laser light source, which uses a laser optical machine to provide a laser beam;

a galvanometer scanning module, which is provided with an X-Y optical scanning lens and an optical reflecting lens and is arranged on a transmission path of the laser beam;

a visual module having a first beam splitter set disposed between the laser source and the galvanometer scanning module;

a translation carrying platform which is provided with a working platform and at least a displacement mechanism capable of performing X, Y axial directions and is arranged below the galvanometer scanning module; and

a workpiece with the front surface of a substrate coated with formed micro-electromechanical probe attachments is placed on the working platform with the front surface of the substrate facing upwards to remove photoresist, or is placed on the working platform with the back surface of the substrate facing upwards to form a gasification adhesion layer;

the laser beam is focused on the workpiece through the reflection of the optical reflection lens and the angle transfer of the X-Y optical scanning lens, and a response beam is generated on the workpiece and enters the first beam splitter group through the light collection of the X-Y optical scanning lens and the reflection of the optical reflection lens.

2. The apparatus of claim 1, wherein the laser beam has a wavelength of 355nm to 1070 nm.