CN217193123U - N-type conductive GaSb wafer processing system - Google Patents
N-type conductive GaSb wafer processing system Download PDFInfo
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- CN217193123U CN217193123U CN202221721694.4U CN202221721694U CN217193123U CN 217193123 U CN217193123 U CN 217193123U CN 202221721694 U CN202221721694 U CN 202221721694U CN 217193123 U CN217193123 U CN 217193123U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The utility model provides an N type electric conduction GaSb wafer processing system, which comprises an electric spark cutting machine, an N type electric conduction GaSb crystal, an upper copper sheet, a lower copper sheet and a control device; the upper copper sheet is placed above the N-type conductive GaSb crystal, the lower copper sheet is placed below the N-type conductive GaSb crystal, and the upper copper sheet, the N-type conductive GaSb crystal and the lower copper sheet are clamped by a clamp of an electric spark cutting machine; the surfaces of the upper copper sheet and the lower copper sheet are uniformly provided with a plurality of tip electrodes, and the tip electrodes of the upper copper sheet and the lower copper sheet are both placed towards the N-type conductive GaSb crystal. Adopt the utility model discloses a system of processing, the processing degree of difficulty is little, the raw materials rate of recovery is high.
Description
Technical Field
The utility model relates to a conductive GaSb wafer system of processing of N type belongs to semiconductor material processing field.
Background
In the prior art, after the GaSb crystal is grown by a Czochralski method, the GaSb crystal needs to be cut into wafers. Since the grown GaSb crystal is not a standard cylinder, the GaSb crystal needs to be processed into a standard cylinder, and then the standard cylinder is cut to form a wafer, thereby completing the processing. For the processing of the standard cylinder, the conventional method is to grind the GaSb crystal by using a roller circular machine to make the GaSb crystal into the standard cylinder. In the grinding process, on one hand, a large amount of GaSb powder is generated to float in the air, so that the pollution is strong; on the other hand, the grinded GaSb powder can be mixed with grinding fluid to cause pollution of the GaSb powder, and the GaSb powder cannot be recycled, so that the raw material is greatly wasted.
Disclosure of Invention
To the technical problem, the utility model provides a system of processing of electrically conductive GaSb wafer of N type aims at solving in the above-mentioned standard cylinder course of working of GaSb crystal, the problem of extravagant raw materials to and other technical problems that cause by this problem.
The wire-cut electric discharge technology adopts the principle of electric discharge to process the workpiece. In the processing process, a continuously moving fine metal wire is used as an electrode to carry out pulse spark discharge corrosion on metal and cutting forming on a workpiece. The specific operation method comprises the following steps: molybdenum wires or copper wires are used as cutting metal wires, the metal wires are connected with the negative electrode of a high-frequency pulse power supply to be used as tool electrodes, workpieces are connected with the positive electrode of the pulse power supply, and spark discharge is utilized to cut machined parts. Under the action of an electric field, the surfaces of the anode and the cathode are bombarded by electron current and ion current respectively, so that an instantaneous high-temperature heat source is formed in the electrode gap, and the high-temperature heat source melts and gasifies local metal. The vaporized working solution and the steam of the workpiece material expand instantly and rapidly, and the melted and vaporized workpiece material is thrown out of the discharge channel under the combined action of the thermal expansion and the working solution stamping, so that a spark discharge process is completed. When the next pulse comes, the spark discharge process is continuously repeated, so that the workpiece is cut and shaped.
The utility model provides a pair of electrically conductive GaSb wafer system of processing of N type, a serial communication port, include: the device comprises an electric spark cutting machine, an N-type conductive GaSb crystal, an upper copper sheet, a lower copper sheet and a control device; the upper copper sheet is placed above the N-type conductive GaSb crystal, the lower copper sheet is placed below the N-type conductive GaSb crystal, and the upper copper sheet, the N-type conductive GaSb crystal and the lower copper sheet are clamped by a clamp of an electric spark cutting machine; the electric spark cutting machine comprises a pulse power supply, wherein the anode of the pulse power supply is connected with the upper copper sheet and the lower copper sheet, and the cathode of the pulse power supply is connected with a metal wire of the electric spark cutting machine; the surfaces of the upper copper sheet and the lower copper sheet are uniformly provided with a plurality of tip electrodes, and the tip electrodes of the upper copper sheet and the lower copper sheet are both placed towards the N-type conductive GaSb crystal.
Optionally, the thickness of the N-type conductive GaSb crystal is 5 cm.
Optionally, the thickness of the upper copper sheet is 2 mm; the thickness of the lower copper sheet is 2mm, and the length of the tip electrode is 1 mm.
Optionally, the metal wire is a molybdenum wire or a copper wire.
The utility model has the advantages that:
(1) and cutting the GaSb crystal by using an electric spark cutting machine to form a standard GaSb crystal cylinder, and then continuously cutting the standard cylinder into GaSb crystal wafers by using the electric spark cutting machine. When the non-standard GaSb cylindrical crystal is processed, the cutting gap is only 0.25 mm, the loss is extremely small, the cut raw materials are blocky, and the recovery rate is extremely high.
(2) In the actual process of machining the N-type conductive GaSb crystal by adopting the wire cut electrical discharge machining technology, because the flatness of the surface of the crystal is not high, the contact between the copper sheet and the crystal is not tight enough by adopting the upper and the lower flat copper sheets, and the ideal discharge effect cannot be achieved. On the other hand, during the growth of GaSb crystal, dense Ga is easily formed on the surface thereof 2 O 3 Thin film due to dense Ga 2 O 3 The thin film is not conductive, so that the phenomenon of non-conduction is easy to occur when electric spark cutting is used, the GaSb crystal cannot be cut, and the processing of the GaSb wafer cannot be finished. The surfaces of the upper copper sheet and the lower copper sheet are uniformly provided with a plurality of tip electrodes, the tip electrodes of the upper copper sheet and the lower copper sheet are all placed towards the N-type conductive GaSb crystal, the tip electrodes can enable the copper sheets to be in closer contact with the crystal on one hand, and the physical characteristics of the tip electrodes can enable the tip electrodes to enable the copper sheets to be in closer contact with the crystal on the other handGa which pierces the surface of an N-type conductive GaSb crystal 2 O 3 The film is used for enabling the copper sheet to be in direct contact with the N-type conductive GaSb crystal, and the processing difficulty of the N-type conductive GaSb wafer is reduced.
(3) The plurality of tip electrodes are arranged on the surfaces of the upper copper sheet and the lower copper sheet, so that high-voltage discharge of the tip electrodes can be caused during electric spark cutting, larger heat is generated, and the processing difficulty is further reduced.
Drawings
Fig. 1 is a schematic view of an N-type conductive GaSb wafer processing system according to the present invention;
fig. 2 is a partial enlarged view of the present invention.
In the figure: 1-an electric spark cutting machine, 2-N type conductive GaSb crystals, 3-an upper copper sheet, 4-a lower copper sheet, 5-a control device and 6-metal wires.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings, and it is to be understood that the described embodiments are only some embodiments of the present invention, and not all embodiments.
Referring to fig. 1 of the specification, the present embodiment provides an N-type conductive GaSb wafer processing system, which includes: the device comprises an electric spark cutting machine 1, an N-type conductive GaSb crystal 2, an upper copper sheet 3, a lower copper sheet 4 and a control device 5; wherein, the upper copper sheet 3 is placed above the N-type conductive GaSb crystal 2, the lower copper sheet 4 is placed below the N-type conductive GaSb crystal 2, and a clamp (not shown in the figure) of the electric spark cutting machine 1 clamps the upper copper sheet 3, the N-type conductive GaSb crystal 2 and the lower copper sheet 4; the electric spark cutting machine 1 comprises a pulse power supply, wherein the anode of the pulse power supply is connected with an upper copper sheet 3 and a lower copper sheet 4, and the cathode of the pulse power supply is connected with a metal wire 6 of the electric spark cutting machine; referring to the attached fig. 2 of the specification, the surfaces of the upper copper sheet 3 and the lower copper sheet 4 are uniformly provided with a plurality of tip electrodes, and the tip electrodes of the upper copper sheet 3 and the lower copper sheet 4 are both placed towards the N-type conductive GaSb crystal 2.
By adopting the N-type conductive GaSb wafer processing system provided by the embodiment, the standard GaSb crystal cylinder is formed by cutting the GaSb crystal by using the electric spark cutting machine, and then the standard cylinder is continuously cut into the GaSb crystal wafer by using the electric spark cutting machine. When the non-standard GaSb cylindrical crystal is processed, the cutting gap is only 0.25 mm, the loss is extremely small, the cut raw materials are blocky, and the recovery rate is extremely high.
In this embodiment, in the actual process of processing the N-type conductive GaSb crystal by the wire cut electrical discharge machining technique, because the flatness of the surface of the crystal is not high, the contact between the copper sheet and the crystal is not tight enough by the flat upper and lower copper sheets, and thus the ideal discharge effect is not achieved. On the other hand, during the growth of GaSb crystal, dense Ga is easily formed on the surface thereof 2 O 3 Thin film due to dense Ga 2 O 3 The thin film is not conductive, so that the phenomenon of non-conduction is easy to occur when electric spark cutting is used, the GaSb crystal cannot be cut, and the processing of the GaSb wafer cannot be finished. In this embodiment, the surfaces of the upper copper sheet and the lower copper sheet are uniformly provided with a plurality of tip electrodes, the tip electrodes of the upper copper sheet and the lower copper sheet are all placed towards the N-type conductive GaSb crystal, the tip electrodes can enable the copper sheets to be in closer contact with the crystal on one hand, and the tip electrodes can enable the tip electrodes to pierce the Ga on the surface of the N-type conductive GaSb crystal on the other hand due to the physical characteristics of the tip electrodes 2 O 3 The film enables the copper sheet to be in direct contact with the N-type conductive GaSb crystal, and the processing difficulty of the N-type conductive GaSb wafer is reduced.
Furthermore, the plurality of tip electrodes are arranged on the surfaces of the upper copper sheet and the lower copper sheet, so that high-voltage discharge of the tip electrodes can be caused during electric spark cutting, larger heat is generated, and the processing difficulty is further reduced.
In one embodiment, the N-type conductive GaSb crystal has a thickness of 5 cm.
In one embodiment, the upper copper sheet has a thickness of 2 mm; the thickness of the lower copper sheet is 2mm, and the length of the tip electrode is 1 mm.
In one embodiment, the metal wire is a molybdenum wire or a copper wire.
The above-mentioned embodiment is right the utility model discloses an explanation, it is not right the utility model discloses a limited, any right the scheme after the simple transform of the utility model all belongs to the protection scope of the utility model.
Claims (4)
1. An N-type conductive GaSb wafer processing system, comprising: the device comprises an electric spark cutting machine (1), an N-type conductive GaSb crystal (2), an upper copper sheet (3), a lower copper sheet (4) and a control device (5); the upper copper sheet (3) is placed above the N-type conductive GaSb crystal (2), the lower copper sheet (4) is placed below the N-type conductive GaSb crystal (2), and the upper copper sheet (3), the N-type conductive GaSb crystal (2) and the lower copper sheet (4) are clamped by a clamp of an electric spark cutting machine (1); the electric spark cutting machine (1) comprises a pulse power supply, the anode of the pulse power supply is connected with the upper copper sheet (3) and the lower copper sheet (4), and the cathode of the pulse power supply is connected with a metal wire (6) of the electric spark cutting machine; the surfaces of the upper copper sheet (3) and the lower copper sheet (4) are uniformly provided with a plurality of tip electrodes, and the tip electrodes of the upper copper sheet (3) and the lower copper sheet (4) are both placed towards the N-type conductive GaSb crystal (2).
2. An N-type conductive GaSb wafer processing system according to claim 1, wherein for: the thickness of the N-type conductive GaSb crystal (2) is 5 cm.
3. An N-type conductive GaSb wafer processing system according to claim 1, wherein for: the thickness of the upper copper sheet (3) is 2 mm; the thickness of the lower copper sheet (4) is 2mm, and the length of the tip electrode is 1 mm.
4. An N-type conductive GaSb wafer processing system according to claim 1, wherein for: the metal wire (6) is a molybdenum wire or a copper wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221721694.4U CN217193123U (en) | 2022-07-06 | 2022-07-06 | N-type conductive GaSb wafer processing system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221721694.4U CN217193123U (en) | 2022-07-06 | 2022-07-06 | N-type conductive GaSb wafer processing system |
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| Publication Number | Publication Date |
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| CN217193123U true CN217193123U (en) | 2022-08-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202221721694.4U Active CN217193123U (en) | 2022-07-06 | 2022-07-06 | N-type conductive GaSb wafer processing system |
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2022
- 2022-07-06 CN CN202221721694.4U patent/CN217193123U/en active Active
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