CN217173945U - Silicon carbide crystal growth device - Google Patents
Silicon carbide crystal growth device Download PDFInfo
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- CN217173945U CN217173945U CN202220831765.XU CN202220831765U CN217173945U CN 217173945 U CN217173945 U CN 217173945U CN 202220831765 U CN202220831765 U CN 202220831765U CN 217173945 U CN217173945 U CN 217173945U
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Abstract
The utility model relates to a carborundum crystal growth device, including the crucible that has the confined inner space and with paste the first seed crystal at the crucible top and set up the second seed crystal at the bottom of crucible freely, bearing structure is used for bearing the weight of carborundum raw materials and has the passageway that supplies the carborundum raw materials of evaporation state to pass through, sets up between first seed crystal and the second seed crystal, and heating device is used for making carborundum raw materials form into the evaporation state. Through the technical scheme, the silicon carbide raw material is arranged in the crucible through the bearing structure, the evaporated silicon carbide raw material moves upwards and downwards respectively under the action of temperature and moves to the two seed crystals respectively, and the seed crystals produced by the PVT method can be produced two at a time. The second seed crystal is freely arranged at the bottom of the crucible, namely, the second seed crystal is not arranged at the bottom of the crucible in an adhesion mode like the first seed crystal, so that the problem that the produced silicon carbide crystal has quality defects due to inconsistent thermal stress when the seed crystals are adhered is avoided.
Description
Technical Field
The disclosure relates to the field of crystal preparation, in particular to a silicon carbide crystal growth device.
Background
The silicon carbide as the third-generation semiconductor material is superior to the common materials in the aspects of thermal property, electricity property, corrosion resistance and the like, and can be widely used for manufacturing semiconductor devices such as semiconductor lighting, microelectronics, power electronics and the like so as to achieve the aims of reducing power consumption, improving switching frequency, reducing overall cost and the like. The commonly used method for growing silicon carbide single crystal is Physical Vapor Transport (PVT), which can only produce one silicon carbide single crystal at a time in the existing production equipment, and has low efficiency and difficulty in meeting the increasing demand for yield.
SUMMERY OF THE UTILITY MODEL
The purpose of the present disclosure is to provide a silicon carbide crystal growth apparatus to solve the problem of low production efficiency in the production of silicon carbide single crystals by the PVT method in the related art.
In order to achieve the above object, the present disclosure provides a silicon carbide crystal growth apparatus comprising
A crucible having an enclosed interior space;
the first seed crystal is arranged at the top of the crucible in a sticking way;
a second seed crystal freely disposed at the bottom of the crucible;
the bearing structure is used for bearing the silicon carbide raw material and is arranged between the first seed crystal and the second seed crystal, and the bearing structure is provided with a channel for the evaporated silicon carbide raw material to pass through;
and the heating device is used for forming the silicon carbide raw material into a vaporization state and enabling the interior of the crucible to generate gradually-reduced temperature gradients from the bearing structure to the top and the bottom respectively so as to drive the silicon carbide raw material in the vaporization state to move to the surfaces of the first seed crystal and the second seed crystal to form crystals.
Optionally, the bearing structure comprises a first bearing part and a second bearing part which are arranged at intervals and have a compact structure, the peripheral edge of the first bearing part has a gap with the inner wall of the crucible, the second bearing part is connected with the inner wall of the crucible and has a through hole for the silicon carbide raw material in the evaporated state to pass through, and the gap is communicated with the through hole to form the channel for the silicon carbide raw material in the evaporated state to pass through.
Optionally, the first bearing part is made of silicon carbide crystal, and a surface of the first bearing part, which is used for bearing the silicon carbide raw material, is covered with a carbon film, or the first bearing part is made of graphite.
Optionally, a third bearing part is arranged between the first bearing part and the second bearing part, the third bearing part has a porous structure, and the gap, the porous structure and the through hole are communicated to form the channel for the evaporated silicon carbide raw material to pass through.
Optionally, the second bearing part and the third bearing part are made of graphite.
Optionally, the thickness of the first seed crystal and the second seed crystal is 300-.
Optionally, a filter is arranged between the bearing structure and the second seed crystal, and the filter is made of graphite with a porous structure.
Optionally, the heating device is a magnetic induction coil wound around the outer side of the crucible.
Optionally, the bottom of the crucible is provided with a receiving groove formed in a bowl-shaped structure to limit a displacement distance of the second seed crystal in a horizontal direction.
Optionally, an openable crucible cover is arranged at the top of the crucible, and the first seed crystal is arranged on the inner side surface of the crucible cover in a sticking manner.
Through the technical scheme, the two seed crystals are arranged at the top and the bottom of the crucible, the silicon carbide raw material is arranged in the crucible through the bearing structure, the bearing structure is provided with a channel for the evaporated silicon carbide raw material to pass through, the evaporated silicon carbide raw material moves upwards and downwards respectively due to the temperature effect, moves to the two seed crystals and generates crystals, namely, the two silicon carbide crystals can be produced at one time by producing the seed crystals by the one-time PVT method, and the production efficiency of the silicon carbide crystals is improved. And the second seed crystal is freely arranged at the bottom of the crucible, namely, the second seed crystal is not arranged at the bottom of the crucible in an adhesion mode like the first seed crystal, so that the quality defect of the produced silicon carbide crystal caused by inconsistent thermal stress when the seed crystals are adhered is avoided.
Additional features and advantages of the disclosure will be set forth in the detailed description which follows.
Drawings
The accompanying drawings, which are included to provide a further understanding of the disclosure and are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and together with the description serve to explain the disclosure without limiting the disclosure. In the drawings:
fig. 1 is a schematic structural diagram of a silicon carbide crystal growth apparatus provided in an exemplary embodiment of the present disclosure.
Description of the reference numerals
1-crucible, 11-crucible cover, 2-first seed crystal, 3-second seed crystal, 4-bearing structure, 41-first bearing part, 411-gap, 42-second bearing part, 421-through hole, 43-third bearing part, 5-heating device, 6-filtering piece and 7-containing groove.
Detailed Description
The following detailed description of specific embodiments of the present disclosure is provided in connection with the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present disclosure, are given by way of illustration and explanation only, not limitation.
In the present disclosure, unless otherwise stated, the use of directional terms such as "top" and "bottom" generally refers to the orientation of the relevant component in the actual use state, and refer to the drawing direction of fig. 1. "inner and outer" refer to the inner and outer of the respective component profiles. In addition, when the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements, unless otherwise indicated. The terms "first," "second," and the like, as used in this disclosure, are intended to distinguish one element from another, and not necessarily for sequential or importance.
The utility model provides a long brilliant device of carborundum, shown by figure 1, including crucible 1 that has confined inner space, be provided with first seed crystal 2, second seed crystal 3 and load-bearing structure 4 in the crucible 1 respectively, wherein, first seed crystal 2 sets up at crucible 1 top with pasting the mode, second seed crystal 3 sets up freely in the bottom of crucible 1, load-bearing structure 4 is used for bearing the weight of carborundum raw materials and sets up between first seed crystal 2 and second seed crystal 3, load-bearing structure 4 has the passageway that supplies the carborundum raw materials of evaporation state to pass through. The silicon carbide long-pass device of the present disclosure further comprises a heating device 5, wherein the heating device 5 is used for forming the silicon carbide raw material into an evaporation state and enabling the inside of the crucible 1 to generate a gradually reduced temperature gradient from the bearing structure 4 to the top and the bottom respectively so as to drive the silicon carbide raw material in the evaporation state to move to the surfaces of the first seed crystal 2 and the second seed crystal 3 to form crystals. Since the presence of the support structure 4 corresponds to the provision of a barrier between the silicon carbide feedstock and the second seed crystal 3, the purpose of the passage provided in the support structure 4 is to allow the silicon carbide feedstock in the evaporated state to pass smoothly through for crystallization at the surface of the second seed crystal 3.
Through the technical scheme, the first seed crystal 2 and the second seed crystal 3 are respectively arranged at the top and the bottom of the crucible 1, the silicon carbide raw material is arranged in the crucible 1 through the bearing structure 4, the bearing structure 4 is provided with a channel for the evaporated silicon carbide raw material to pass through, the evaporated silicon carbide raw material respectively moves upwards and downwards due to the temperature effect, moves to the two seed crystals and generates crystals, namely, the two silicon carbide crystals can be produced at one time by carrying out one-time PVT method to produce the seed crystals. The production efficiency of the silicon carbide crystal is improved. And the second seed crystal 3 is freely arranged at the bottom of the crucible, namely, is not arranged at the bottom of the crucible 1 in an adhesion manner like the first seed crystal, so that the quality defect of the produced silicon carbide crystal caused by inconsistent thermal stress when the seed crystals are adhered is avoided.
In some embodiments of the present disclosure, as shown in fig. 1, the bearing structure 4 may include a first bearing part 41 and a second bearing part 42 which are arranged at intervals and have a dense structure, a peripheral edge of the first bearing part 41 has a gap 411 with an inner wall of the crucible 1, the second bearing part 42 is connected with the inner wall of the crucible 1 and has a through hole 421 through which the silicon carbide raw material in an evaporated state passes, and the gap 411 is communicated with the through hole 421 to form a passage through which the silicon carbide raw material in an evaporated state passes. The first carrier 41 carries a silicon carbide raw material, which may be in various forms such as powder or block. The first bearing part 41 is provided in a dense structure, which can effectively prevent the silicon carbide raw material from falling off the first bearing part 41 when the raw material is in a powder form. Specifically, the silicon carbide raw material in an evaporated state flows through the gap 411 to the through hole 421 and then flows onto the second seed crystal 3 to precipitate a silicon carbide crystal.
Further, the first supporting portion 41 may be made of silicon carbide crystal material, and the surface of the first supporting portion 41 for supporting the silicon carbide raw material is covered with carbon film, or the first supporting portion 41 may also be made of graphite material. The thickness of the silicon carbide crystal may be 3 to 20mm, and the thickness of the carbon film covering the upper surface of the silicon carbide crystal may be 5 to 50 μm. Silicon carbide crystal is in the in-process of production, whole crucible 1 temperature can be very high, general metal can't be as the material of bearing structure 4, and silicon carbide crystal is when first bearing part 41, can not disturb the production of normal crystal under the high temperature condition, first bearing part 41 surface covering has the carbon film simultaneously, can avoid silicon carbide crystal because high temperature and evaporation, and can avoid the heat transfer inequality that silicon carbide powder form raw materials and silicon carbide crystal point contact arouse behind the covering carbon film, and then influence the evaporation of raw materials. Or the first bearing part 41 can be made of graphite which is high temperature resistant and does not evaporate to influence the quality of the crystal produced on the seed crystal.
In other embodiments, a third bearing part 43 may be disposed between the first bearing part 41 and the second bearing part 42, and the third bearing part 43 has a porous structure. At this time, the gap 411, the porous structure and the through hole 421 communicate to form a passage through which the silicon carbide raw material in a vaporized state passes. The third bearing part 43 of a porous structure may further increase the effect of gas flow in the case where the gap 411 and the through-hole 421 have been provided. Alternatively, the thickness of the third bearing part 43 may be 3-10 mm. The second receiving portion 42 and the third receiving portion 43 are made of graphite. The graphite material is high temperature resistant and does not evaporate to affect the quality of the crystal produced on the seed crystal.
The thickness of the first seed crystal 2 and the second seed crystal 3 may be 300-500 μm. If the first seed crystal 2 and the second seed crystal 3 are too thin, the surface of the seed crystal may be burned due to too high temperature, thereby affecting the production of subsequent crystals, and the cost may be increased due to too thick seed crystals.
A filter 6 may be disposed between the support structure 4 and the second seed crystal 3, and the filter 6 may be made of graphite having a porous structure. As the silicon carbide raw material in the evaporated state moves downward, a small amount of crystallization occurs at the bottom of the first carrier 41, and finally becomes evaporated again due to the temperature rise to flow onto the second seed crystal 3. The filter member 6 is provided to prevent a small amount of crystals generated at the bottom of the first carrier portion 41 from directly falling onto the second seed crystal 3, thereby affecting the quality of the produced crystals, and a small amount of crystals falling onto the filter member 6 can be evaporated again without being wasted. The filtering piece 6 is made of graphite with a porous structure, the thickness of the filtering piece can be 2-10mm, the distance between the filtering piece 6 and the second seed crystal 3 can be 20-40mm, the porous structure can play a role in filtering effect and simultaneously does not influence gas flow, and the graphite material is high in temperature resistance and does not evaporate to influence the crystal quality produced on the seed crystals.
As shown in fig. 1, the heating device 5 may be a magnetic induction coil wound around the outside of the crucible 1. The magnetic induction coil has higher heating speed and higher utilization rate of electricity, and further saves the production cost.
The bottom of the crucible 1 may be provided with a receiving groove 7, and the receiving groove 7 is formed in a bowl-shaped structure to limit a displacement distance of the second seed crystal 3 in a horizontal direction. Second seed crystal 3 sets up freely in crucible 1 bottom, and holding tank 7 can partially restrict the displacement distance of second seed crystal 3 on the horizontal direction, produces the influence to the crystal when avoiding appearing great rocking in the production process.
Further, the top of the crucible 1 may be provided with an openable crucible cover 11, and the first seed crystal 2 may be adhesively disposed on the inner side surface of the crucible cover 11. Therefore, after production is finished, the crystals generated on the two seed crystals can be taken out by opening the crucible cover 11, and the time for taking the crystals by operating personnel is saved.
The preferred embodiments of the present disclosure are described in detail with reference to the accompanying drawings, however, the present disclosure is not limited to the specific details of the above embodiments, and various simple modifications may be made to the technical solution of the present disclosure within the technical idea of the present disclosure, and these simple modifications all belong to the protection scope of the present disclosure.
It should be noted that, in the foregoing embodiments, various features described in the above embodiments may be combined in any suitable manner, and in order to avoid unnecessary repetition, various combinations that are possible in the present disclosure are not described again.
In addition, any combination of various embodiments of the present disclosure may be made, and the same should be considered as the disclosure of the present disclosure, as long as it does not depart from the spirit of the present disclosure.
Claims (10)
1. A silicon carbide crystal growth device is characterized by comprising
A crucible having an enclosed interior space;
the first seed crystal is arranged at the top of the crucible in a sticking way;
a second seed crystal freely disposed at the bottom of the crucible;
the bearing structure is used for bearing the silicon carbide raw material and is arranged between the first seed crystal and the second seed crystal, and the bearing structure is provided with a channel for the evaporated silicon carbide raw material to pass through;
and the heating device is used for forming the silicon carbide raw material into a vaporization state and enabling the interior of the crucible to generate gradually-reduced temperature gradients from the bearing structure to the top and the bottom respectively so as to drive the silicon carbide raw material in the vaporization state to move to the surfaces of the first seed crystal and the second seed crystal to form crystals.
2. The silicon carbide crystal growth device according to claim 1, wherein the bearing structure comprises a first bearing part and a second bearing part which are arranged at intervals and have a dense structure, the peripheral edge of the first bearing part has a gap with the inner wall of the crucible, the second bearing part is connected with the inner wall of the crucible and has a through hole for passing the silicon carbide raw material in an evaporated state, and the gap is communicated with the through hole to form the channel for passing the silicon carbide raw material in an evaporated state.
3. The silicon carbide crystal growth device according to claim 2, wherein the first bearing part is made of a silicon carbide crystal material, and a surface of the first bearing part for bearing the silicon carbide raw material is covered with a carbon film, or the first bearing part is made of a graphite material.
4. The silicon carbide crystal growth device according to claim 2, wherein a third bearing portion is provided between the first bearing portion and the second bearing portion, the third bearing portion having a porous structure, the gap, the porous structure and the through-hole communicating with each other to form the passage through which the silicon carbide raw material in a vaporized state passes.
5. The silicon carbide crystal growth device according to claim 4, wherein the second carrier part and the third carrier part are made of graphite.
6. The silicon carbide crystal growth device as claimed in claim 1, wherein the thickness of the first seed crystal and the second seed crystal is 300-500 μm.
7. The silicon carbide crystal growth device according to claim 1, wherein a filter is arranged between the bearing structure and the second seed crystal, and the filter is made of graphite with a porous structure.
8. The silicon carbide crystal growth device according to claim 1, wherein the heating means is a magnetic induction coil wound around the outside of the crucible.
9. The silicon carbide crystal growth apparatus according to claim 1, wherein a bottom of the crucible is provided with a holding tank formed in a bowl-like structure to limit a displacement distance of the second seed crystal in a horizontal direction.
10. The silicon carbide crystal growth device according to claim 1, wherein an openable crucible cover is provided on the top of the crucible, and the first seed crystal is adhesively provided on the inner side surface of the crucible cover.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202220831765.XU CN217173945U (en) | 2022-04-11 | 2022-04-11 | Silicon carbide crystal growth device |
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| CN202220831765.XU CN217173945U (en) | 2022-04-11 | 2022-04-11 | Silicon carbide crystal growth device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116334749A (en) * | 2023-04-18 | 2023-06-27 | 通威微电子有限公司 | Silicon carbide seed crystal bonding device and method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116334749A (en) * | 2023-04-18 | 2023-06-27 | 通威微电子有限公司 | Silicon carbide seed crystal bonding device and method |
| CN116334749B (en) * | 2023-04-18 | 2023-10-24 | 通威微电子有限公司 | Silicon carbide seed crystal bonding device and method |
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