CN217149384U - Draft tube and single crystal furnace with same - Google Patents

Abstract

The utility model discloses a draft tube and have its single crystal growing furnace, gas passage is injectd at the center of draft tube, be equipped with in the draft tube with gas passage spaced apart first unloading passageway, first unloading passageway has first import and first export, first import forms the upper surface of draft tube, first export forms the lower surface of draft tube, first unloading passageway includes: a first spiral channel connected between the first inlet and the first outlet, the first spiral channel extending spirally downward around the gas channel. According to the utility model discloses a draft tube can avoid silicon material to fall into the crucible at a high speed effectively to be favorable to avoiding reinforced in-process liquid level central point to put and appear undulantly, be favorable to guaranteeing the growth quality of crystal bar.

Description

Draft tube and single crystal furnace with same

Technical Field

The utility model relates to a silicon crystal growth field especially relates to a draft tube and have its single crystal growing furnace.

Background

In the related art, for a CCZ growth apparatus, in the process of crystal bar growth, silicon material needs to be continuously added into a crucible to ensure that the amount of silicon melt in the crucible is kept unchanged, but in the process of feeding, the silicon material has a large dropping speed, has a certain impact on the melt liquid level, easily causes fluctuation of the center position of the liquid level, and affects the growth quality of the crystal bar.

SUMMERY OF THE UTILITY MODEL

The utility model discloses aim at solving one of the technical problem that exists among the prior art at least. Therefore, the utility model provides a draft tube can avoid silicon material to fall into the crucible at a high speed effectively to be favorable to avoiding reinforced in-process liquid level central point to put and appear undulantly, be favorable to guaranteeing the growth quality of crystal bar.

The utility model also provides a single crystal growing furnace with above-mentioned draft tube.

According to the utility model discloses draft tube for single crystal growing furnace, gas passage is injectd at the center of draft tube, be equipped with in the draft tube with gas passage spaced apart first unloading passageway, first unloading passageway has first import and first export, first import forms the upper surface of draft tube, first export forms the lower surface of draft tube, first unloading passageway includes: a first spiral channel connected between the first inlet and the first outlet, the first spiral channel extending spirally downward around the gas channel.

According to the utility model discloses draft tube, through making first unloading passageway include first helical passage, first helical passage centers on gas channel spiral downwardly extending, at reinforced in-process, first helical passage has the effect that slows down to the whereabouts of silicon material, can avoid silicon material to fall into the crucible at a high speed effectively to be favorable to avoiding reinforced in-process liquid level central point to put and appear undulantly, be favorable to guaranteeing the growth quality of crystal bar.

In some embodiments of the present invention, the first material dropping channel further comprises: the first straight channel is positioned above the first spiral channel, the top end of the first straight channel is provided with the first inlet, and the bottom end of the first straight channel is communicated with the inlet of the first spiral channel; the second straight channel is positioned below the first spiral channel, the top end of the second straight channel is communicated with the outlet of the first spiral channel, and the first outlet is formed at the bottom end of the second straight channel.

In some embodiments of the present invention, the draft tube further has a second discharging passage spaced apart from the first discharging passage, in a radial direction of the draft tube, the second discharging passage is located radially inside the first discharging passage, the second discharging passage has a second inlet and a second outlet, the second inlet is formed on the upper surface of the draft tube, the second outlet is formed on the lower surface of the draft tube, the second discharging passage includes: a second spiral channel connected between the second inlet and the second outlet, the second spiral channel extending downwardly around the gas channel.

In some embodiments of the present invention, the inner diameter of the first spiral channel is greater than the inner diameter of the second spiral channel.

In some embodiments of the present invention, the second feeding channel further comprises: the third straight channel is positioned above the second spiral channel, a second inlet is formed at the top end of the third straight channel, and the bottom end of the third straight channel is communicated with the inlet of the second spiral channel; and the fourth straight channel is positioned below the second spiral channel, the top end of the fourth straight channel is communicated with the outlet of the second spiral channel, and the second outlet is formed at the bottom end of the fourth straight channel.

In some embodiments of the present invention, the guide shell comprises: the packaging part is wrapped on the outer sides of the first blanking pipe and the second blanking pipe, the first blanking pipe limits the first blanking channel, and the second blanking pipe limits the second blanking channel.

In some embodiments of the present invention, the wrapping portion is molybdenum or a heat-insulating felt.

In some embodiments of the present invention, the guide shell further has a dopant channel therein, the dopant channel being spaced apart from the first blanking channel, the dopant channel being located radially inward of the first blanking channel, the dopant channel having a third inlet and a third outlet, the third inlet being formed on the upper surface of the guide shell, the third outlet being formed on the lower surface of the guide shell.

In some embodiments of the invention, the dopant channel is formed as a helical channel; or, the dopant channel is formed as an S-shaped channel extending in an up-down direction; or the central axis of the dopant channel extends along the up-down direction, and the cross-sectional area of the dopant channel is gradually reduced in the direction from the top to the bottom.

According to the utility model discloses single crystal growing furnace, include: the guide shell.

According to the utility model discloses single crystal growing furnace through setting up foretell draft tube, is favorable to guaranteeing the growth quality of crystal bar.

Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.

Drawings

Fig. 1 is a schematic structural diagram of a guide cylinder and a crucible according to a first embodiment of the present invention;

fig. 2 is a schematic structural diagram of a draft tube according to a second embodiment of the present invention;

fig. 3 is a schematic structural diagram of a draft tube according to a third embodiment of the present invention;

fig. 4 is a schematic structural diagram of a guide cylinder according to a fourth embodiment of the present invention;

fig. 5 is a schematic structural diagram of a fifth guide shell according to the embodiment of the present invention.

Reference numerals:

a single crystal furnace 100;

a draft tube 10; a gas passage 11; a first blanking channel 12; a first inlet 121; a first outlet 122;

a first spiral channel 123; a first straight channel 124; a second straight channel 125;

a second blanking channel 13; a second inlet 131; a second outlet 132;

a second spiral channel 133; a third straight channel 134; a fourth straight channel 135;

a wrapping section 14; a first blanking pipe 15; a second feed pipe 16;

a dopant channel 17; a third inlet 171; a third outlet 172;

a horizontal surface 18; a bevel 19;

a crucible 20.

Detailed Description

Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary and intended to be used for explaining the present invention, and should not be construed as limiting the present invention.

The following disclosure provides many different embodiments or examples for implementing different features of the invention. In order to simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present disclosure provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize the applicability of other processes and/or the use of other materials.

The draft tube 10 and the single crystal furnace 100 having the same according to the embodiment of the present invention will be described with reference to fig. 1 to 5.

Referring to fig. 1, according to the embodiment of the present invention, a draft tube 10 is used for a single crystal furnace 100, a gas channel 11 is defined at the center of the draft tube 10, the single crystal furnace 100 further includes a crucible 20, the crucible 20 is disposed below the draft tube 10, and during the crystal bar growth process of the single crystal furnace 100, inert gas flows downwards to the crucible 20 through the gas channel 11 of the draft tube 10, so as to ensure the growth quality of the crystal bar.

Referring to fig. 1, a first baiting channel 12 is provided in the guide cylinder 10 to be spaced apart from the gas channel 11, the first baiting channel 12 has a first inlet 121 and a first outlet 122, the first inlet 121 is formed on the upper surface of the guide cylinder 10, the first outlet 122 is formed on the lower surface of the guide cylinder 10, the first baiting channel 12 includes a first spiral channel 123, the first spiral channel 123 is connected between the first inlet 121 and the first outlet 122, and the first spiral channel 123 extends spirally downward around the gas channel 11.

For example, as shown in fig. 1, the first spiral passage 123 may be a spiral passage with a constant spiral diameter in the up-down direction, the lower surface of the guide shell 10 has a horizontal surface 18 and an inclined surface 19, the horizontal surface 18 and the inclined surface 19 are connected and arranged at an obtuse angle, and the first outlet 122 is opened on the inclined surface 19. From this, at reinforced in-process, silicon material can get into first helical coiled passage 123 through first import 121, and spiral helicine first helical coiled passage 123 has the effect of slowing down to the whereabouts of silicon material, can avoid silicon material to fall into crucible 20 through first export 122 at a high speed effectively to be favorable to avoiding reinforced in-process liquid level central point to put and appear undulantly, be favorable to guaranteeing the growth quality of crystal bar. Of course, the present invention is not limited to this, and the first spiral passage 123 may be a spiral passage in which the spiral diameter is gradually reduced or increased in the up-down direction.

In view of this, according to the utility model discloses draft tube 10, through making first unloading passageway 12 include first helical passage 123, first helical passage 123 extends around 11 spirals of gas passage downwards, and at reinforced in-process, first helical passage 123 has the effect of slowing down to the whereabouts of silicon material, can avoid silicon material to fall into crucible 20 at a high speed effectively to be favorable to avoiding reinforced in-process liquid level central point to put and appear undulantly, be favorable to guaranteeing the growth quality of crystal bar.

In some embodiments of the present invention, referring to fig. 1, the first blanking channel 12 further includes: a first straight channel 124 and a second straight channel 125, the first straight channel 124 is positioned above the first spiral channel 123, a first inlet 121 is formed at the top end of the first straight channel 124, the bottom end of the first straight channel 124 is communicated with the inlet of the first spiral channel 123, the second straight channel 125 is positioned below the first spiral channel 123, the top end of the second straight channel 125 is communicated with the outlet of the first spiral channel 123, and a first outlet 122 is formed at the bottom end of the second straight channel 125. For example, as shown in fig. 1, the first straight passage 124 and the second straight passage 125 each extend in the vertical direction.

It can be understood that, by providing the first straight channel 124, a worker can add silicon material to the first blanking channel 12 conveniently, which is beneficial to ensuring the adding amount of the silicon material, and at the same time, the second straight channel 125 can guide the silicon material flowing out from the first spiral channel 123 to the first outlet 122, which is beneficial to ensuring the reliability of silicon material addition, and the first straight channel 124 and the second straight channel 125 have simple structures and are convenient to process.

In some optional embodiments of the present invention, referring to fig. 2, the draft tube 10 further has a second discharging passage 13 spaced apart from the first discharging passage 12, the second discharging passage 13 is located inside the first discharging passage 12 in a radial direction of the draft tube 10, the second discharging passage 13 has a second inlet 131 and a second outlet 132, the second inlet 131 is formed on an upper surface of the draft tube 10, the second outlet 132 is formed on a lower surface of the draft tube 10, for example, the second outlet 132 is disposed on the horizontal surface 18, and the second discharging passage 13 includes: a second spiral path 133, the second spiral path 133 being connected between the second inlet 131 and the second outlet 132, the second spiral path 133 extending downward around the gas channel 11.

It can be understood that, by arranging the first discharging channel 12 and the second discharging channel 13 in the draft tube 10, the silicon material can be added into the crucible 20 through the first discharging channel 12 and the second discharging channel 13, so that the silicon material can be dispersedly added into the crucible 20, and the speed of the silicon material falling into the crucible 20 can be reduced, which is beneficial to further avoiding the fluctuation of the central position of the liquid level of the crucible 20 in the charging process.

In some embodiments of the present invention, referring to fig. 2, the inner diameter of the first spiral channel 123 is larger than the inner diameter of the second spiral channel 133. From this, first spiral channel 123 can be used to put in the small powder, and second spiral channel 133 can be used to put in the big powder, and the small powder level of putting in is in the radial inboard of the big powder of putting in, and it can be understood that, compares the big powder, and the influence that the input of small powder is undulant to the liquid level of silicon melt soup is less, puts in the big powder through making the position at the liquid level center of keeping away from silicon melt soup to can further reduce the liquid level fluctuation in the feeding process, be favorable to guaranteeing the production quality of crystal bar. It can be understood that, in the present invention, the small material refers to the silicon material with the diameter between 4mm-15mm, and the large material refers to the silicon material with the diameter between 45mm-110 mm.

Of course, the present invention is not limited to this, and the inner diameter of the first spiral channel 123 may be smaller than the inner diameter of the second spiral channel 133, as long as it is ensured that the first spiral channel 123 and the second spiral channel 133 are suitable for throwing in the large material and the small material, respectively.

In some embodiments of the present invention, referring to fig. 2, the second discharging channel 13 further includes: a third straight channel 134 and a fourth straight channel 135, the third straight channel 134 is positioned above the second spiral channel 133, the top end of the third straight channel 134 is formed with a second inlet 131, the bottom end of the third straight channel 134 is communicated with the inlet of the second spiral channel 133, the fourth straight channel 135 is positioned below the second spiral channel 133, the top end of the fourth straight channel 135 is communicated with the outlet of the second spiral channel 133, and the bottom end of the fourth straight channel 135 is formed with a second outlet 132. For example, the third straight passage 134 and the fourth straight passage 135 each extend in the vertical direction.

It can be understood that the third straight channel 134 is arranged to facilitate the addition of silicon material to the second spiral channel 133 by a worker, and meanwhile, the fourth straight channel 135 is arranged to facilitate the silicon material flowing out from the second spiral channel 133 to flow to the second outlet 132, which is beneficial to ensuring the reliability of silicon material addition, and meanwhile, the third straight channel 134 and the fourth straight channel 135 are simple in structure and convenient to process.

In some optional embodiments of the present invention, referring to fig. 5, the draft tube 10 includes: the wrapping portion 14 wraps the outer sides of the first blanking pipe 15 and the second blanking pipe 16, the first blanking pipe 15 defines the first blanking channel 12, and the second blanking pipe 16 defines the second blanking channel 13. It can be understood that, when the guide cylinder 10 is manufactured, the first blanking pipe 15 and the second blanking pipe 16 may be manufactured, and then the wrapping portion 14 is wrapped outside the first blanking pipe 15 and the second blanking pipe 16 to form the guide cylinder 10, so that the manufacturing is convenient, and the reduction of the production cost is facilitated.

Further, referring to fig. 5, the wrapping portion 14 is made of molybdenum or heat insulating felt. It can be understood that the heat preservation felt is generally mainly made of graphite, and molybdenum and graphite have very high melting points, so that the wrapping part 14 is made of molybdenum or the heat preservation felt, which is beneficial to improving the overall melting point of the draft tube 10, ensuring the working reliability of the draft tube 10 and ensuring the growth quality of the crystal bar.

In some optional embodiments of the present invention, referring to fig. 3 and 4, the guide cylinder 10 further has a dopant channel 17 therein, the dopant channel 17 being spaced apart from the first blanking channel 12, the dopant channel 17 being located radially inside the first blanking channel 12, the dopant channel 17 having a third inlet 171 and a third outlet 172, the third inlet 171 being formed on the upper surface of the guide cylinder 10, and the third outlet 172 being formed on the lower surface of the guide cylinder 10. For example, as shown with reference to fig. 3 and 4, the dopant channel 17 may be disposed between the first spiral channel 123 and the second spiral channel 133. Therefore, the draft tube 10 can be used for putting silicon materials and doping agents, so that the function of the draft tube 10 is diversified, and meanwhile, the growth quality of a crystal bar is favorably ensured by adding the doping agents in the crystal growth process.

In some embodiments of the present invention, the dopant channel 17 is formed as a spiral channel; alternatively, the dopant channel 17 is formed as an S-shaped channel extending in the up-down direction (refer to fig. 3); alternatively, the central axis of the dopant host 17 extends in the up-down direction, and the cross-sectional area of the dopant host 17 gradually decreases in the up-down direction (refer to fig. 4). It can be understood that, by forming the dopant channel 17 as a spiral channel, an S-shaped channel or a channel with a gradually decreasing cross-sectional area, the dopant channel 17 has a slowing effect on the falling of the dopant in the process of adding the dopant, and can effectively prevent the dopant from falling into the crucible 20 at a high speed, so that the fluctuation of the center position of the liquid level in the feeding process can be reduced, and the growth quality of the crystal bar can be ensured

Referring to fig. 1, a single crystal furnace 100 according to an embodiment of the present invention includes: according to the utility model discloses draft tube 10 of above-mentioned embodiment.

According to the utility model discloses single crystal growing furnace 100, through setting up according to the utility model discloses above-mentioned embodiment's draft tube 10 is favorable to guaranteeing the growth quality of crystal bar.

Other configurations and operations of the single crystal furnace 100 according to embodiments of the present invention are known to those of ordinary skill in the art and will not be described in detail herein.

In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", and the like, indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically limited otherwise.

In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," and "fixed" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally formed; the connection can be mechanical connection, electrical connection or communication; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.

In the present application, unless expressly stated or limited otherwise, the first feature may be directly on or directly under the second feature or indirectly via intermediate members. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.

In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.

While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.

Claims (10)

1. A draft tube, used for a single crystal furnace, the center of the draft tube defining a gas passage, a first blanking passage spaced apart from the gas passage and provided in the draft tube, the first blanking passage having a first inlet formed in an upper surface of the draft tube and a first outlet formed in a lower surface of the draft tube, the first blanking passage comprising:

a first spiral channel connected between the first inlet and the first outlet, the first spiral channel extending spirally downward around the gas channel.

2. The draft tube of claim 1, wherein the first blanking passage further comprises:

the first straight channel is positioned above the first spiral channel, the top end of the first straight channel is provided with the first inlet, and the bottom end of the first straight channel is communicated with the inlet of the first spiral channel;

the second straight channel is positioned below the first spiral channel, the top end of the second straight channel is communicated with the outlet of the first spiral channel, and the first outlet is formed at the bottom end of the second straight channel.

3. The guide cylinder according to claim 1, further having a second blanking passage spaced apart from the first blanking passage, the second blanking passage being located inside the first blanking passage in a radial direction of the guide cylinder, the second blanking passage having a second inlet formed at an upper surface of the guide cylinder and a second outlet formed at a lower surface of the guide cylinder, the second blanking passage including:

a second spiral channel connected between the second inlet and the second outlet, the second spiral channel extending downwardly around the gas channel.

4. The draft tube of claim 3, wherein an inner diameter of the first spiral passage is greater than an inner diameter of the second spiral passage.

5. The draft tube according to claim 3, wherein the second feed passage further comprises:

the third straight channel is positioned above the second spiral channel, a second inlet is formed at the top end of the third straight channel, and the bottom end of the third straight channel is communicated with the inlet of the second spiral channel;

and the fourth straight channel is positioned below the second spiral channel, the top end of the fourth straight channel is communicated with the outlet of the second spiral channel, and the second outlet is formed at the bottom end of the fourth straight channel.

6. The draft tube according to claim 3, wherein the draft tube comprises: the packaging part is wrapped on the outer sides of the first blanking pipe and the second blanking pipe, the first blanking pipe limits the first blanking channel, and the second blanking pipe limits the second blanking channel.

7. The draft tube according to claim 6, wherein the wrapping portion is molybdenum or heat insulation felt.

8. The guide shell of claim 1, further comprising a dopant channel spaced from the first downer channel within the guide shell, the dopant channel being radially inward of the first downer channel, the dopant channel having a third inlet formed in the upper surface of the guide shell and a third outlet formed in the lower surface of the guide shell.

9. The draft tube of claim 8, wherein the dopant channel is formed as a spiral channel; or, the dopant channel is formed as an S-shaped channel extending in an up-down direction; or the central axis of the dopant channel extends along the up-down direction, and the cross-sectional area of the dopant channel is gradually reduced in the direction from the top to the bottom.

10. A single crystal furnace, comprising: draft tube according to any one of claims 1 to 9.

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