CN217077867U - 一种磷化铟生长的压力容器装置 - Google Patents
一种磷化铟生长的压力容器装置 Download PDFInfo
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- CN217077867U CN217077867U CN202220583718.8U CN202220583718U CN217077867U CN 217077867 U CN217077867 U CN 217077867U CN 202220583718 U CN202220583718 U CN 202220583718U CN 217077867 U CN217077867 U CN 217077867U
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- indium phosphide
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- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 230000001681 protective effect Effects 0.000 claims abstract description 12
- 239000011248 coating agent Substances 0.000 claims abstract description 8
- 238000000576 coating method Methods 0.000 claims abstract description 8
- 238000012423 maintenance Methods 0.000 claims description 16
- 238000007789 sealing Methods 0.000 claims description 6
- 238000011897 real-time detection Methods 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 description 8
- 239000010453 quartz Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000004880 explosion Methods 0.000 description 3
- 239000010426 asphalt Substances 0.000 description 2
- 230000000711 cancerogenic effect Effects 0.000 description 2
- 231100000357 carcinogen Toxicity 0.000 description 2
- 239000003183 carcinogenic agent Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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Abstract
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CN202220583718.8U CN217077867U (zh) | 2022-03-17 | 2022-03-17 | 一种磷化铟生长的压力容器装置 |
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CN202220583718.8U CN217077867U (zh) | 2022-03-17 | 2022-03-17 | 一种磷化铟生长的压力容器装置 |
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CN217077867U true CN217077867U (zh) | 2022-07-29 |
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CN202220583718.8U Active CN217077867U (zh) | 2022-03-17 | 2022-03-17 | 一种磷化铟生长的压力容器装置 |
Country Status (1)
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CN (1) | CN217077867U (zh) |
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2022
- 2022-03-17 CN CN202220583718.8U patent/CN217077867U/zh active Active
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Effective date of registration: 20240122 Address after: No. 20, Building 20, No. 160 Xihu West Road, Wujin National High tech Industrial Development Zone, Changzhou City, Jiangsu Province, 213100 Patentee after: Zhongxun Semiconductor (Jiangsu) Co.,Ltd. Country or region after: China Address before: 253000 No. 8, Baodian Town Development Zone, Ningjin County, Dezhou City, Shandong Province Patentee before: Shandong ousite New Material Technology Co.,Ltd. Country or region before: China |