CN217077858U - Composite crystal bed for synthesizing large diamond single crystal by multi-crystal seed method - Google Patents
Composite crystal bed for synthesizing large diamond single crystal by multi-crystal seed method Download PDFInfo
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- CN217077858U CN217077858U CN202122163745.8U CN202122163745U CN217077858U CN 217077858 U CN217077858 U CN 217077858U CN 202122163745 U CN202122163745 U CN 202122163745U CN 217077858 U CN217077858 U CN 217077858U
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Abstract
The utility model discloses a compound brilliant bed that is used for many seed crystal methods to synthesize big single crystal of diamond, including being discoid upper coating, well intermediate layer, lower coating, upper coating, well intermediate layer, lower coating all become the discoid of uniform diameter, just the upper surface at the lower coating is placed to well intermediate layer, the upper surface at well intermediate layer is placed to the upper coating. The utility model discloses inlay at the upper coating layer and have the seed crystal, spread near the seed crystal and appear on the seed crystal as carbon element, and then realize the homoepitaxial growth of diamond. By improving the thermal conductivity of the interlayer material, the temperature field distribution of the upper coating layer can be obviously improved, the radial temperature gradient of the upper coating layer is obviously smaller, the growth of large diamond single crystals is facilitated, and the synthesized diamond is in a state of uniform size and perfect crystal form.
Description
Technical Field
The utility model relates to a diamond synthesis technical field especially relates to a compound brilliant bed that is used for many seed crystal methods to synthesize big single crystal of diamond.
Background
Diamond is commonly called as 'diamond', is a limiting functional material which integrates multiple excellent performances such as maximum hardness, maximum thermal conductivity, minimum compression ratio, widest light-transmitting wave band, fastest sound velocity, strong acid and strong base corrosion resistance, radiation resistance, high breakdown voltage, high carrier mobility and the like in the materials in the world at present, and is widely applied to various fields such as industry, military, science and technology, medical treatment, jewelry and the like.
The traditional crystal bed for synthesizing diamond by a multi-seed crystal method is a cylindrical integral material, most of the traditional crystal bed is made of magnesium oxide materials through compression molding and sintering, seed crystals for diamond growth are embedded in the crystal bed, and when a graphite carbon source is diffused to the vicinity of the seed crystals under the action of a driving force, the graphite carbon source is separated out on the seed crystals to realize the homoepitaxial growth of large diamond single crystals.
However, since the thermal conductivity of magnesium oxide is about 36W/(m · k), this results in a large temperature gradient (radial temperature gradient) from the central seed to the edge of the circular surface on the circular surface where the seed is embedded, which inevitably causes non-uniform temperature field distribution of the crystal bed, and finally results in very large diamond length in the center and perfect crystal form, while the surrounding crystals are small, i.e. the synthesized diamond has non-uniform particle size, and the crystal form of the surrounding diamond crystals becomes distorted and imperfect. Therefore, a composite crystal bed for synthesizing large diamond single crystals by a multi-seed crystal method is provided.
SUMMERY OF THE UTILITY MODEL
The utility model aims at solving the problem that the integrated crystal bed technology in the prior art is difficult to solve the defects of slow growth rate and distorted crystal form of diamond crystals around the diamond synthesized by a multi-crystal seed method, and providing a composite crystal bed for synthesizing large single crystals of diamond by the multi-crystal seed method.
In order to achieve the above purpose, the utility model adopts the following technical scheme:
the composite crystal bed for synthesizing the large diamond single crystal by the multi-seed crystal method comprises a disc-shaped upper coating layer, a middle interlayer and a lower coating layer, wherein the upper coating layer, the middle interlayer and the lower coating layer are disc-shaped and have equal diameters, the middle interlayer is arranged on the upper surface of the lower coating layer, and the upper coating layer is arranged on the upper surface of the middle interlayer.
The middle interlayer is a graphite sheet.
The upper coating layer and the lower coating layer are both magnesium oxide sheets.
The total height of the upper coating layer, the middle interlayer and the lower coating layer is marked as H, and the value of H is 6.5-7 mm.
Preferably, the graphite flakes are high strength, high purity graphite flakes.
Preferably, the thickness of the upper cladding layer is recorded as h 1 H is said 1 Has a thickness of 2-2.5 mm, and the thickness of the interlayer is recorded as h 2 H is said 2 The thickness of (A) is 1.5-2.5 mm.
The utility model provides a compound brilliant bed that is used for many seed crystal methods to synthesize big single crystal of diamond, beneficial effect lies in: dividing the traditional integrated crystal bed into 3 parts of an upper coating layer, a middle interlayer and a lower coating layer to form a composite crystal bed; under the condition that the upper coating layer and the lower coating layer are both magnesium oxide sheets, when the seed crystal is embedded in the upper coating layer and the production process of the diamond is carried out; because the middle interlayer is the high-strength and high-purity graphite flake, and the heat conductivity coefficient of the graphite flake can reach more than 150W/(m.k), the temperature field distribution of the upper coating layer inlaid with the seed crystal can be obviously improved by virtue of the high heat conductivity coefficient of the graphite flake, the radial temperature gradient of the upper coating layer inlaid with the seed crystal is obviously smaller, the growth of large diamond single crystals is further facilitated, and the synthesized diamond is in a state of uniform size and perfect crystal form.
Drawings
Fig. 1 is a schematic structural diagram of a composite crystal bed for synthesizing a large diamond single crystal by a multi-seed crystal method.
Fig. 2 is a schematic structural view of a conventional crystal bed of the present invention.
In the figure: an upper coating layer 1, a middle interlayer 2 and a lower coating layer 3.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.
Example 1
Referring to fig. 1, the composite crystal bed for synthesizing the large diamond single crystal by the multi-seed crystal method comprises a disc-shaped upper coating layer 1, a middle interlayer 2 and a lower coating layer 3, wherein the upper coating layer 1, the middle interlayer 2 and the lower coating layer 3 are all disc-shaped with equal diameters, the middle interlayer 2 is arranged on the upper surface of the lower coating layer 3, and the upper coating layer 1 is arranged on the upper surface of the middle interlayer 2.
The intermediate layer 2 is a graphite sheet.
The upper coating layer 1 and the lower coating layer 3 are both magnesium oxide sheets.
The total height of the upper cladding layer 1, the middle interlayer 2 and the lower cladding layer 3 is marked as H, and the value of H is 6.8 mm.
The graphite flake is a high-strength and high-purity graphite flake body.
The thickness of the upper cladding layer 1 is denoted by h 1 ，h 1 Has a thickness of 2.3 mm and the thickness of the intermediate layer 2 is marked as h 2 ， h 2 Has a thickness of 2 mm, and the lower cladding layer 3 has a thickness of 2.5 mm.
Further, during the production of diamond, the seed crystal required for production is embedded in the upper cladding layer, and the surface of the seed crystal is kept flush with the upper surface of the upper cladding layer 1.
Comparative example
Referring to fig. 2, compared with the diamond produced by using the conventional crystal bed in fig. 2, the diamond produced by using the composite crystal bed in the embodiment has a uniform size and a perfect crystal form, so that the composite crystal bed provided by the scheme is beneficial to growth of large diamond single crystals in the production process of the diamond, and can enable the synthesized diamond to be in a state of uniform size and perfect crystal form, thereby being beneficial to popularization and use.
The above, only be the concrete implementation of the preferred embodiment of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art is in the technical scope of the present invention, according to the technical solution of the present invention and the utility model, the concept of which is equivalent to replace or change, should be covered within the protection scope of the present invention.
Claims (2)
1. The composite crystal bed for synthesizing the large diamond single crystal by the multi-seed crystal method is characterized by comprising a disc-shaped upper coating layer (1), a disc-shaped middle interlayer (2) and a disc-shaped lower coating layer (3), wherein the disc-shaped upper coating layer (1), the disc-shaped middle interlayer (2) and the disc-shaped lower coating layer (3) are of equal diameters, the disc-shaped middle interlayer (2) is placed on the upper surface of the disc-shaped lower coating layer (3), and the disc-shaped upper coating layer (1) is placed on the upper surface of the disc-shaped middle interlayer (2);
the middle interlayer (2) is a graphite sheet;
the upper coating layer (1) and the lower coating layer (3) are both magnesium oxide sheets;
the total height of the upper coating layer (1), the middle interlayer (2) and the lower coating layer (3) is marked as H, and the value of H is 6.5-7 mm.
2. The composite crystal bed for synthesizing the diamond large single crystal by the multi-seed crystal method according to claim 1, wherein the thickness of the upper cladding layer (1) is recorded as h 1 H is said 1 Has a thickness of 2-2.5 mm, the thickness of the middle interlayer (2) is marked as h 2 H is said 2 The thickness of (A) is 1.5-2.5 mm.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116651324A (en) * | 2023-05-26 | 2023-08-29 | 中晶钻石有限公司 | Structure and method for adjusting internal temperature field of diamond cultivated by high-temperature high-pressure method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116651324A (en) * | 2023-05-26 | 2023-08-29 | 中晶钻石有限公司 | Structure and method for adjusting internal temperature field of diamond cultivated by high-temperature high-pressure method |
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