CN217063690U

CN217063690U - Control unit of intelligent management and control system applied to communication network indoor distribution system

Info

Publication number: CN217063690U
Application number: CN202220103120.4U
Authority: CN
Inventors: 陈浩; 常振国; 安会超; 李新领
Original assignee: Beijing Hongguang Xingyu Technology Development Co ltd
Current assignee: Beijing Hongguang Xingyu Technology Development Co ltd
Priority date: 2022-01-14
Filing date: 2022-01-14
Publication date: 2022-07-26
Anticipated expiration: 2032-01-14

Abstract

The utility model discloses a be applied to the control unit of communication network indoor distribution system's intelligent management and control system, a serial communication port, this the control unit is including combination solid state switch, combination solid state switch includes first MOSFET, second MOSFET and IGBT, and wherein, first MOSFET establishes ties with second MOSFET, and second MOSFET connects in parallel with IGBT. The utility model discloses a control unit can be according to distribution system's device consumption size, transfers to second MOSFET or IGBT conducting circuit automatically, through the nimble switching between MOSFET and the IGBT, falls indoor distribution system's loss to minimum.

Description

Control unit of intelligent management and control system applied to communication network indoor distribution system

Technical Field

The utility model relates to a the control unit especially relates to a be applied to the control unit of the indoor distribution system's of communication network intelligence management and control system.

Background

The indoor distribution system is a system aiming at indoor user groups and used for improving the mobile communication environment in a building; the signal of the mobile communication base station can be uniformly distributed at each corner indoors, so that the indoor area is ensured to have ideal signal coverage.

Indoor distribution system is widely used, and it includes a plurality of devices, for guarantee safety and result of use, need carry out the management and control through intelligent management and control system to these devices, when appearing unusual, need pass through the power of the disconnected these devices of control unit to guarantee safe in utilizationly.

When the power supply of the device is controlled by a solid-state switch, the traditional control unit is generally controlled by an MOSFET (metal oxide semiconductor field effect transistor) or an IGBT (insulated gate bipolar transistor), wherein the MOSFET is resistive when being conducted, and the IGBT is equivalent to a diode after being conducted;

when controlled device power consumption is less, adopt MOSFET control to have lower consumption than IGBT control, can reduce whole power consumption, nevertheless when controlled device power consumption is higher, MOSFET consumption can be greater than IGBT, and at this moment, adopt IGBT to reduce whole power consumption on the contrary.

Because the power consumption of the indoor distribution system is not invariable in practice, the whole power consumption of part of the time is higher no matter the IGBT or the MOSFET is selected, and the lowest power consumption state cannot be achieved.

For the above reasons, there is a need to develop a control unit that can adapt to the characteristics of an indoor distribution system to reduce power consumption and reduce power consumption.

SUMMERY OF THE UTILITY MODEL

In order to overcome the above problems, the inventors propose a control unit of an intelligent management and control system applied to an indoor distribution system of a communication network, the control unit comprising a combined solid-state switch, the combined solid-state switch comprising a first MOSFET, a second MOSFET and an IGBT,

the first MOSFET is connected with the second MOSFET in series, and the second MOSFET is connected with the IGBT in parallel.

Preferably, the first MOSFET and the second MOSFET are N-channel enhancement type MOSFETs, the drain electrode of the first MOSFET and the drain electrode of the second MOSFET are connected to realize the series connection of the first MOSFET and the second MOSFET,

and the drain electrode of the second MOSFET is connected with the collector electrode of the IGBT, and the source electrode of the second MOSFET is connected with the emitter electrode of the IGBT, so that the second MOSFET and the IGBT are connected in parallel.

Preferably, the source of the first MOSFET is connected to a power supply and the source of the second MOSFET is connected to a device of an indoor distribution system.

Preferably, the first MOSFET and the second MOSFET are P-channel enhancement type MOSFETs, the connection of the source of the first MOSFET and the source of the second MOSFET realizes the series connection of the first MOSFET and the second MOSFET,

and the source electrode of the second MOSFET is connected with the collector electrode of the IGBT, and the drain electrode of the second MOSFET is connected with the emitter electrode of the IGBT, so that the second MOSFET and the IGBT are connected in parallel.

Preferably, the drain of the first MOSFET is connected to a power supply and the drain of the second MOSFET is connected to a device of an indoor distribution system.

Preferably, the gates of the first MOSFET, the second MOSFET and the IGBT are respectively connected with a main control chip of the intelligent management and control system, the on-state of the first MOSFET, the second MOSFET and the IGBT is controlled by the main control chip,

when the current is smaller than the preset current, the main control chip controls the first MOSFET and the second MOSFET to be switched on and the IGBT to be switched off by controlling the voltage output to the grids of the first MOSFET, the second MOSFET and the IGBT;

when the current is larger than the preset current, the main control chip controls the first MOSFET and the IGBT to be switched on and the second MOSFET to be switched off by controlling the voltage output to the grids of the first MOSFET, the second MOSFET and the IGBT.

Preferably, the combined solid-state switch has a plurality of solid-state switches, and the solid-state switches are arranged in different phase lines.

On the other hand, the utility model also provides an intelligence management and control system for indoor distribution system of communication network, include the control unit as in one of above-mentioned embodiment, this intelligence management and control system still includes:

a current collecting unit for collecting current flowing through the distribution system device,

and the main control unit controls the conduction states of the first MOSFET, the second MOSFET and the IGBT according to the current collected by the current collecting unit.

The utility model discloses the beneficial effect who has includes:

(1) the power consumption can be automatically adjusted to a second MOSFET or IGBT conducting circuit according to the power consumption, and the loss of an indoor distribution system is reduced to the minimum through flexible switching between the MOSFET and the IGBT;

(2) the application range of the indoor distribution system is improved.

Drawings

Fig. 1 is a schematic diagram of a circuit structure of a control unit of an intelligent management and control system applied to an indoor distribution system of a communication network according to a preferred embodiment of the present invention;

fig. 2 shows a connection relationship diagram of the control unit, the distribution system device and the power supply of the intelligent management and control system applied to the indoor distribution system of the communication network according to the preferred embodiment of the present invention.

Detailed Description

The present invention will be described in further detail with reference to the drawings and examples. The features and advantages of the present invention will become more apparent from the description.

The word "exemplary" is used exclusively herein to mean "serving as an example, embodiment, or illustration. Any embodiment described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments. While the various aspects of the embodiments are presented in drawings, the drawings are not necessarily drawn to scale unless specifically indicated.

According to the utility model provides a pair of be applied to communication network indoor distribution system's intelligence management and control system's the control unit, through using MOSFET and IGBT combination, select different switch modes for use according to the change of equipment consumption to reduce loss to minimum.

The MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET) refers to a Metal-Oxide-Semiconductor Field Effect Transistor;

the igbt (insulated Gate Bipolar transistor) refers to an insulated Gate Bipolar transistor.

In particular, the control unit comprises a combined solid-state switch comprising a first MOSFET, a second MOSFET and an IGBT, as shown in figure 1,

According to the present invention, the first MOSFET and the second MOSFET are enhancement MOSFETs, which may be N-channel MOSFETs, which may be P-channel MOSFETs,

when the first MOSFET and the second MOSFET are N-channel enhancement type MOSFETs, the drain electrode of the first MOSFET is connected with the drain electrode of the second MOSFET to realize the series connection of the first MOSFET and the second MOSFET,

the drain electrode of the second MOSFET is connected with the collector electrode of the IGBT, the source electrode of the second MOSFET is connected with the emitter electrode of the IGBT, and the second MOSFET and the IGBT are connected in parallel, as shown in fig. 1.

Further, the source of the first MOSFET is connected with a power supply, and the source of the second MOSFET is connected with a device of an indoor distribution system.

When the first MOSFET and the second MOSFET are P-channel enhancement type MOSFETs, the source connection of the first MOSFET and the source connection of the second MOSFET realize the series connection of the first MOSFET and the second MOSFET,

Further, the drain of the first MOSFET is connected with a power supply, and the drain of the second MOSFET is connected with a device of an indoor distribution system.

According to the utility model, the grids of the first MOSFET, the second MOSFET and the IGBT are respectively connected with the main control chip of the intelligent management and control system, the conduction states of the first MOSFET, the second MOSFET and the IGBT are controlled by the main control chip,

Taking an N-channel enhancement type MOSFET as an example, after a forward voltage is turned on, as shown in fig. 1, when a current is small, the main control chip provides a positive voltage to the gates of the first MOSFET and the second MOSFET, and does not provide a voltage to the gate of the IGBT, so that the first MOSFET and the second MOSFET are turned on, the IGBT is turned off, and since the power consumption of the MOSFET is lower than that of the IGBT under a small current, the MOSFET is switched on, and the whole combined solid-state switch is kept in a low-power consumption state;

when the electric current grow, when exceeding the default, main control chip provides the positive voltage to first MOSFET and IGBT's grid, does not provide voltage to second MOSFET's grid, then first MOSFET and IGBT switch on, and second MOSFET ends, and because MOSFET consumption is higher than the IGBT consumption under the heavy current, the IGBT switches on the whole consumption that has reduced the solid-state switch of combination.

Since the P-channel enhancement MOSFET has the same principle, it will not be described in detail.

Through a large number of measurements, the inventor sets the preset value of the current to be 2.9A, at this time, the power consumption of the IGBT and the power consumption of the MOSFET are equal, and when the current is increased, the power consumption of the MOSFET is larger than that of the IGBT.

According to the utility model discloses, can include a plurality of combination solid state switches among the control unit, with combination solid state switch setting in the phase line of difference, for example when indoor distribution system's device is through double-phase alternating current power supply, combination solid state switch has two, and two solid state switches are established ties after the anti-parallel connection between L and load to all play the switching action to forward voltage and reverse voltage, as shown in fig. 2, equally, when indoor distribution system's device is through three-phase alternating current power supply, combination solid state switch has six, establishes ties after every two anti-parallel connections between A, B, C and load.

In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "front", "rear", and the like indicate the position or positional relationship based on the operation state of the present invention, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific position, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and "fourth" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; the connection may be direct or indirect via an intermediate medium, and may be a communication between the two elements. The specific meaning of the above terms in the present invention can be understood as a specific case by those skilled in the art.

The present invention has been described above in connection with preferred embodiments, which are merely exemplary and illustrative. On this basis, can be right the utility model discloses carry out multiple replacement and improvement, these all fall into the protection scope of the utility model.

Claims

1. A control unit of an intelligent management and control system applied to an indoor distribution system of a communication network is characterized by comprising a combined solid-state switch, wherein the combined solid-state switch comprises a first MOSFET, a second MOSFET and an IGBT,

2. The control unit of the intelligent management and control system applied to the indoor distribution system of the communication network as set forth in claim 1,

the first MOSFET and the second MOSFET are N-channel enhancement type MOSFETs, the drain electrode of the first MOSFET is connected with the drain electrode of the second MOSFET to realize the series connection of the first MOSFET and the second MOSFET,

3. The control unit of the intelligent management and control system applied to the indoor distribution system of the communication network as set forth in claim 2,

the source electrode of the first MOSFET is connected with a power supply, and the source electrode of the second MOSFET is connected with devices of an indoor distribution system.

4. The control unit of the intelligent management and control system applied to the indoor distribution system of the communication network as claimed in claim 1,

the first MOSFET and the second MOSFET are P-channel enhancement type MOSFETs, the source electrode of the first MOSFET is connected with the source electrode of the second MOSFET to realize the series connection of the first MOSFET and the second MOSFET,

5. The control unit of the intelligent management and control system applied to the indoor distribution system of the communication network, as set forth in claim 4,

the drain electrode of the first MOSFET is connected with a power supply, and the drain electrode of the second MOSFET is connected with a device of an indoor distribution system.

6. The control unit of the intelligent management and control system applied to the indoor distribution system of the communication network as claimed in one of claims 1 to 5,

the grids of the first MOSFET, the second MOSFET and the IGBT are respectively connected with a main control chip of the intelligent control system, the conduction states of the first MOSFET, the second MOSFET and the IGBT are controlled by the main control chip,

7. The control unit of the intelligent management and control system applied to the indoor distribution system of the communication network as claimed in one of claims 1 to 5,

the combined solid-state switch is provided with a plurality of phase lines which are arranged in different phase lines.

8. An intelligent management and control system applied to an indoor distribution system of a communication network, comprising the control unit according to any one of claims 1 to 7, and further comprising:

and the main control unit controls and controls the conduction states of the first MOSFET, the second MOSFET and the IGBT according to the current collected by the current collecting unit.