CN217010817U - High-gain low-noise amplifier - Google Patents
High-gain low-noise amplifier Download PDFInfo
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- CN217010817U CN217010817U CN202220188967.7U CN202220188967U CN217010817U CN 217010817 U CN217010817 U CN 217010817U CN 202220188967 U CN202220188967 U CN 202220188967U CN 217010817 U CN217010817 U CN 217010817U
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Abstract
The utility model discloses a high-gain low-noise amplifier, comprising: the amplifying chip comprises a first amplifying chip and a second amplifying chip and is used for amplifying the input signal in sequence; the filter chip is arranged between the two amplification chips; an isolation circuit connected to both ends of the amplification chip and the filter chip; the pi-type attenuators are arranged at two ends of the second amplification chip; the filter chip adopts a band-pass filter chip. The utility model adopts a two-stage low noise amplifier chip series connection mode, adjusts the impedance matching of the whole link by adjusting the impedance matching network of the input and output ports of the two chips, and eliminates the self-excitation effect; the selection of amplifying power is realized by using the surface acoustic wave filter, so that the higher gain is achieved in a pass band, and the higher isolation is realized outside the pass band; the adjustable performance of the module gain is realized by using the pi-type attenuator.
Description
Technical Field
The utility model relates to the technical field of satellite navigation, in particular to a high-gain low-noise amplifier.
Background
The use of Low Noise Amplifiers (LNAs) is essential in the reception and transmission of satellite signals. Low noise amplifiers, i.e. amplifiers with a very low noise figure, are commonly used as high frequency or intermediate frequency preamplifiers for various types of receivers, as well as amplification circuits for high sensitivity electronic detection devices. In the case of amplifying a weak signal, the noise of the amplifier itself may interfere with the signal seriously, and it is desirable to reduce the noise to improve the signal-to-noise ratio of the output. The low noise amplifier is a key component of the receiver and plays an important role in the design of the radio frequency front end of the whole communication system.
In summary, it is desirable to design a high-gain low-noise amplifier to solve the above-mentioned technical problems.
SUMMERY OF THE UTILITY MODEL
In order to solve the problems in the prior art, the utility model provides a high-gain low-noise amplifier which can be applied to multiple types of satellite receiver equipment.
In order to achieve the purpose, the utility model adopts the following technical scheme:
a high gain low noise amplifier comprising:
the amplifying chip comprises a first amplifying chip and a second amplifying chip and is used for amplifying the input signal in sequence;
the filter chip is arranged between the two amplification chips;
an isolation circuit connected to both ends of the amplification chip and the filter chip;
the pi-type attenuators are arranged at two ends of the second amplification chip;
the filter chip is a band-pass filter chip.
In some embodiments of the present invention, the isolation circuit includes a first capacitor, a second capacitor, a third capacitor and a fourth capacitor, wherein the first capacitor and the second capacitor are respectively connected to an input end and an output end of the first amplification chip; and the third capacitor and the fourth capacitor are respectively connected with the input end and the output end of the second amplification chip.
In some embodiments of the utility model, the pi-type attenuator comprises a first attenuator and a second attenuator; the first attenuator is arranged between the filter chip and the third capacitor; and the second attenuator is connected with the fourth capacitor in series and then connected with the output end of the second amplification chip.
In some embodiments of the utility model, the first attenuator comprises a first resistor, a second resistor, and a third resistor, wherein the first resistor is connected in series into the circuit; the second resistor and the third resistor are connected in parallel to a circuit.
In some embodiments of the utility model, the second attenuator comprises a fourth resistor, a fifth resistor and a sixth resistor, wherein the fourth resistor is connected in series into the circuit; the fifth resistor and the sixth resistor are connected in parallel to a circuit.
In some embodiments of the present invention, the second resistor and the third resistor have the same resistance; the resistance values of the fifth resistor and the sixth resistor are the same.
In some embodiments of the present invention, as the attenuation amount of the first attenuator decreases, the resistance value of the first resistor increases, and the resistance values of the second resistor and the third resistor decrease.
In some embodiments of the present invention, as the attenuation amount of the second attenuator decreases, the resistance value of the fourth resistor increases, and the resistance values of the fifth resistor and the sixth resistor decrease.
Compared with the prior art, the technical scheme of the utility model has the following technical effects:
the utility model provides a high-gain low-noise amplifier, which adopts a two-stage low-noise amplifier chip series connection mode, adjusts the impedance matching of the whole link by adjusting the impedance matching network of the input and output ports of the two chips, and eliminates the self-excitation effect; the selection of amplifying power is realized by using the surface acoustic wave filter, so that the higher gain is achieved in a pass band, and the higher isolation is realized outside the pass band; the adjustable performance of the module gain is realized by using the pi-type attenuator. In addition, the amplifier has the advantages of small volume, light weight, high gain, adjustable frequency range and excellent performance index.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of the high-gain low-noise amplifier.
Fig. 2 is a schematic circuit diagram of the high-gain low-noise amplifier.
Reference numerals are as follows: 100-a first amplification chip; 200-a filter chip; 300-a second amplification chip; 410-a first capacitance; 420-a second capacitance; 430-a third capacitance; 440-a fourth capacitance; 510-a first attenuator; 511-a first resistance; 512-a second resistance; 513-third resistance; 520-a second attenuator; 521-a fourth resistor; 522-fifth resistance; 523-sixth resistance.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "mounted," "connected," and "connected" are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally connected unless otherwise explicitly stated or limited. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art. In the foregoing description of embodiments, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
Referring to fig. 1, a high gain low noise amplifier includes:
the amplifier chip comprises a first amplifier chip 100 and a second amplifier chip 300, and sequentially amplifies an input signal;
a filter chip 200 provided between the two amplification chips;
an isolation circuit connected to both ends of the amplification chip and the filter chip 200;
a pi-type attenuator provided at both ends of the second amplification chip 300;
the filter chip 200 is a band-pass filter chip.
Specifically, the filter chip 200 uses a band-pass surface acoustic wave filter to perform the selection of the amplification frequency of the low noise amplifier, and in addition, if the amplification frequency does not need to be selected, the amplifier can achieve the broadband amplification of 0.5GHz to 4.0 GHz. The filter chip 200 is a core chip that determines the performance of the pass band of the amplifier, and can achieve better narrow-band performance and higher out-of-band rejection by using SAW band-pass filter chips with different center frequencies and pass band bandwidths. The surface acoustic wave filter has the advantages of low insertion loss and high out-of-band rejection, and is widely applied to radio frequency microwave circuits.
In some embodiments of the present invention, regarding the first amplification chip 100 and the second amplification chip 300, they are two low noise amplifier chips having the same model, specifically, the model employs X110D. The first amplification chip 100 and the second amplification chip 300 have a low noise figure and a high signal gain, and referring to fig. 2, the peripheral matching circuit can improve the performance of the low noise amplification chip to the maximum extent, and ensure the optimal performance of the whole circuit.
In some embodiments of the present invention, the isolation circuit includes a first capacitor 410, a second capacitor 420, a third capacitor 430, and a fourth capacitor 440, wherein the first capacitor 410 and the second capacitor 420 are respectively connected to an input terminal and an output terminal of the first amplification chip 100; the third capacitor 430 and the fourth capacitor 440 are respectively connected to an input terminal and an output terminal of the second amplification chip 300. Each capacitor in the isolation circuit is used to isolate a dc component in the input signal, so as to prevent the dc component from affecting the performance of the low noise amplifier chip, i.e. the first amplification chip 100 and the second amplification chip 300.
In some embodiments of the present invention, the pi-type attenuator comprises a first attenuator 510 and a second attenuator 520; the first attenuator 510 is disposed between the filter chip 200 and the third capacitor 430; the second attenuator 520 is connected in series with the fourth capacitor 440 and then connected to the output terminal of the second amplifier chip 300.
In some embodiments of the present invention, a first resistor 511, a second resistor 512, and a third resistor 513 are included for the first attenuator 510, wherein the first resistor 511 is connected in series into the circuit; the second resistor 512 and the third resistor 513 are connected in parallel to a circuit. The first resistor 511, the second resistor 512 and the third resistor 513 form a pi-type attenuator network, which can adjust the impedance matching between the first amplification chip 100 and the second amplification chip 300, and eliminate the self-excitation effect between the two chips. In addition, since the attenuation of the first attenuator 510 does not need to be too large, the impedance matching effect can be achieved.
In some embodiments of the present invention, the second attenuator 520 includes a fourth resistor 521, a fifth resistor 522 and a sixth resistor 523, the fourth resistor 521 is connected in series into a circuit; the fifth resistor 522 and the sixth resistor 523 are connected in parallel to the circuit. The fourth resistor 521, the fifth resistor 522 and the sixth resistor 523 form a pi-type attenuator network, the pi-type attenuator network is used for adjusting the gain of the whole low-noise discharge circuit, and the target gain effect can be achieved by using different resistance values.
In some embodiments of the present invention, the second resistor 512 and the third resistor 513 have the same resistance; the fifth resistor 522 has the same resistance as the sixth resistor 523.
In some embodiments of the present invention, as the attenuation of the first attenuator 510 decreases, the resistance of the first resistor 511 increases, and the resistances of the second resistor 512 and the third resistor 513 decrease. Similarly, as the attenuation of the second attenuator 520 decreases, the resistance of the fourth resistor 521 increases, and the resistances of the fifth resistor 522 and the sixth resistor 523 decrease.
In some embodiments of the present invention, referring to fig. 2, after passing through the first capacitor 410, the input signal enters the input terminal of the first amplifier chip 100, i.e. the port 2; the port 1, the port 8 and the port 9 of the first amplification chip 100 are connected to a peripheral matching circuit; the port 6 is grounded with the port 3, the port 4 and the port 5 after being connected with a resistor with the resistance value of 20K omega. The electrical signal is output from the output terminal of the first amplification chip 100, i.e., the port 7, enters the input terminal of the filter chip 200, i.e., the port 2, via the second capacitor 420, and is output from the output terminal, i.e., the port 5; wherein, the other ports of the filter chip 200 are all grounded. The electrical signal is output from the output terminal of the filter chip 200, and then sequentially passes through the first attenuator 510 and the third capacitor 430, and then enters the input terminal, i.e., port 2, of the second amplification chip 300; similarly, port 1, port 8 and port 9 of the second amplification chip 300 are connected to the peripheral matching circuit; the port 6 is grounded with the port 3, the port 4 and the port 5 after being connected with a resistor with the resistance value of 20K omega. The electrical signal is output from the output terminal of the second amplification chip 300, i.e. the port 7, and then enters the second attenuator 520 through the fourth capacitor 440 for output.
The first capacitor 410, the second capacitor 420, the third capacitor 430 and the fourth capacitor 440 are all 100 pF.
Compared with the prior art, the technical scheme of the utility model has the following technical effects:
the utility model provides a high-gain low-noise amplifier, which adopts a two-stage low-noise amplifier chip series connection mode, wherein the low-noise amplifier chip is a core chip in a low-noise amplifier module, and the noise coefficient and the gain of the low-noise amplifier chip directly influence the performance index of the whole module. The gain of the low noise amplifier chip used in the application is more than 21dB in the frequency range of 0.5GHz-4.0 GHz; the average noise figure of the low noise amplifier chip is 0.6 dB. The impedance matching of the whole link is adjusted by adjusting the impedance matching networks of the input and output ports of the two chips, so that the self-excitation effect is eliminated; the selection of amplification power is realized by using the surface acoustic wave filter, so that the higher gain is achieved in a pass band, and the higher isolation is achieved outside the pass band; the adjustable performance of the module gain is realized by using a pi-type attenuator. In addition, the amplifier has the advantages of small volume, light weight, high gain, adjustable frequency range and excellent performance index.
The gain of the low-noise amplifier provided by the utility model is about 35.2dB at most, and the noise coefficient is about 0.8 dB. The low noise amplifier has dimensions of about 41mm x 24mm x 10mm (excluding radio frequency and power supply connections).
In the foregoing description of embodiments, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (9)
1. A high gain low noise amplifier, comprising:
the amplifying chip comprises a first amplifying chip and a second amplifying chip and is used for amplifying the input signal in sequence;
the filter chip is arranged between the two amplification chips;
an isolation circuit connected to both ends of the amplification chip and the filter chip;
the pi-type attenuators are arranged at two ends of the second amplification chip;
the filter chip adopts a band-pass filter chip.
2. A high gain low noise amplifier according to claim 1, wherein the isolation circuit comprises a first capacitor, a second capacitor, a third capacitor and a fourth capacitor, wherein the first capacitor and the second capacitor are respectively connected to the input terminal and the output terminal of the first amplifier chip; and the third capacitor and the fourth capacitor are respectively connected with the input end and the output end of the second amplification chip.
3. A high gain low noise amplifier according to claim 2, wherein said pi-type attenuator comprises a first attenuator and a second attenuator; the first attenuator is arranged between the filter chip and the third capacitor; and the second attenuator is connected with the output end of the second amplification chip after being connected with the fourth capacitor in series.
4. A high gain low noise amplifier according to claim 3, wherein said first attenuator comprises a first resistor, a second resistor and a third resistor, wherein said first resistor is connected in series into the circuit; the second resistor and the third resistor are connected in parallel to a circuit.
5. A high gain low noise amplifier according to claim 3, wherein said second attenuator comprises a fourth resistor, a fifth resistor and a sixth resistor, wherein said fourth resistor is connected in series to the circuit; the fifth resistor and the sixth resistor are connected in parallel to a circuit.
6. A high gain low noise amplifier according to claim 4, wherein said second resistor and said third resistor have the same resistance.
7. A high gain low noise amplifier according to claim 5, wherein said fifth resistor and said sixth resistor have the same resistance.
8. A high gain low noise amplifier according to claim 4, wherein as the attenuation of the first attenuator decreases, the resistance of the first resistor increases and the resistances of the second resistor and the third resistor decrease.
9. A high gain low noise amplifier according to claim 5, wherein as the attenuation of the second attenuator decreases, the resistance of the fourth resistor increases and the resistances of the fifth resistor and the sixth resistor decrease.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220188967.7U CN217010817U (en) | 2022-01-24 | 2022-01-24 | High-gain low-noise amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220188967.7U CN217010817U (en) | 2022-01-24 | 2022-01-24 | High-gain low-noise amplifier |
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| Publication Number | Publication Date |
|---|---|
| CN217010817U true CN217010817U (en) | 2022-07-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202220188967.7U Active CN217010817U (en) | 2022-01-24 | 2022-01-24 | High-gain low-noise amplifier |
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| CN (1) | CN217010817U (en) |
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- 2022-01-24 CN CN202220188967.7U patent/CN217010817U/en active Active
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