CN216947284U - Single crystal furnace capable of controlling bulk micro-defect density of silicon single crystal - Google Patents

Single crystal furnace capable of controlling bulk micro-defect density of silicon single crystal Download PDF

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Publication number
CN216947284U
CN216947284U CN202123017512.3U CN202123017512U CN216947284U CN 216947284 U CN216947284 U CN 216947284U CN 202123017512 U CN202123017512 U CN 202123017512U CN 216947284 U CN216947284 U CN 216947284U
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single crystal
temperature measuring
silicon single
regulating
controlling
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CN202123017512.3U
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袁长宏
娄中士
李鹏飞
田旭东
李振
闫鹏飞
沙志强
张净源
周宏邦
贾海洋
王淼
张强
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Inner Mongolia Central Leading Semiconductor Materials Co ltd
Zhonghuan Advanced Semiconductor Materials Co Ltd
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Inner Mongolia Central Leading Semiconductor Materials Co ltd
Zhonghuan Advanced Semiconductor Materials Co Ltd
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract

The utility model provides a single crystal furnace capable of controlling the bulk micro defect density of a silicon single crystal, wherein a temperature measuring device for monitoring the temperature gradient of a pulled silicon single crystal constant diameter section and a regulating and controlling device for regulating and controlling the temperature gradient of the constant diameter section are arranged in a furnace body of the single crystal furnace, the temperature measuring device and the regulating and controlling device are fixedly arranged on the inner side of the furnace body, and the regulating and controlling device is arranged around the outer diameter of the constant diameter section. According to the single crystal furnace capable of controlling the bulk micro defect density of the silicon single crystal, the temperature of the steps at different positions in the equal-diameter section of the silicon single crystal is monitored by arranging the plurality of groups of temperature measuring instruments, the stability of the temperatures of the different steps is ensured by arranging the regulating and controlling devices at different positions, the cooling and heat preservation accuracy of the silicon single crystal is improved, and the silicon single crystal meeting the quality of a terminal produced piece is obtained.

Description

Single crystal furnace capable of controlling bulk micro-defect density of silicon single crystal
Technical Field
The utility model belongs to the technical field of single crystal growth, and particularly relates to a single crystal furnace capable of controlling the bulk micro defect density of a silicon single crystal.
Background
During the pulling of a single crystal, self-interstitial defects and vacancy defects occur during crystal growth due to a difference in temperature cooling during the pulling. In the cooling process after crystal growth, because the formation of oxygen precipitates in the process cannot be accurately controlled due to inaccurate stepped temperature control of the crystal during cooling, Bulk micro defect Density (BMD) in the silicon single crystal cannot be adjusted, and the Bulk micro defect Density directly influences the quality of a terminal product, such as the electrical performance of a semiconductor device or the power generation efficiency of a solar tile-stacked assembly, how to accurately monitor and adjust the stepped temperature on the surface of the silicon single crystal in the cooling and heat-preserving process after crystal growth is one of the main problems of controlling the precise Bulk micro defect Density.
SUMMERY OF THE UTILITY MODEL
The utility model provides a single crystal furnace capable of controlling the bulk micro defect density of a silicon single crystal, which is used for solving the technical problem that the bulk micro defect density of the silicon single crystal is uncontrollable because the stepped temperature of an equal-diameter section of the silicon single crystal cannot be accurately monitored in the prior art.
In order to solve at least one technical problem, the technical scheme adopted by the utility model is as follows:
a temperature measuring device for monitoring the temperature gradient of a pulled silicon single crystal constant diameter section and a regulating and controlling device for regulating and controlling the temperature gradient of the constant diameter section are arranged in a furnace body of the single crystal furnace, the temperature measuring device and the regulating and controlling device are fixedly arranged on the inner side of the furnace body, and the regulating and controlling device is arranged around the outer diameter of the constant diameter section.
Further, the temperature measuring device comprises a first temperature measuring instrument, a second temperature measuring instrument and a third temperature measuring instrument which are arranged along the height of the silicon single crystal constant diameter section, and the first temperature measuring instrument, the second temperature measuring instrument and the third temperature measuring instrument are used for measuring the temperature of the silicon single crystal constant diameter section at different positions and heights.
Further, the temperature measuring instrument is positioned in the main chamber of the single crystal furnace;
the second temperature measuring instrument and the third temperature measuring instrument are both positioned in the auxiliary chamber of the single crystal furnace;
and the second thermometer is positioned below the third thermometer.
Further, the height from the first temperature measuring instrument to the solid-liquid interface is 500-600 mm.
Further, the height from the position of the second temperature measuring instrument to the solid-liquid interface is 700-900 mm;
the height from the third temperature measuring instrument to the solid-liquid interface is 800-1000 mm.
Furthermore, the regulating device comprises a first regulating part and a second regulating part, the first regulating part and the second regulating part have the same structure and respectively comprise a heating part and a cooling part, and the heating part and the cooling part are independently arranged or mutually communicated.
Further, when the heating part and the cooling part are separately provided,
the heating part and the cooling part are radially overlapped, and the heating part is arranged in the cooling part;
or the heating part and the cooling part are axially stacked, and the heating part is arranged at the upper end and the lower end of the cooling part;
or the heating part and the cooling part are arranged in an axially staggered mode, and the heating part and the cooling part are arranged in a crossed mode at intervals.
Further, when the heating part and the cooling part are provided in communication, the heating part and the cooling part share the same pipe.
Further, the first adjusting and controlling part is arranged between the first temperature measuring instrument and the second temperature measuring instrument and is positioned on one side, close to the fire cavity, of the main chamber of the single crystal furnace.
Further, the second adjusting and controlling part is arranged between the second thermometer and the third thermometer.
According to the single crystal furnace capable of controlling the bulk micro defect density of the silicon single crystal, which is designed by the utility model, the temperature of the steps at different positions in the equal-diameter section of the silicon single crystal is monitored by arranging a plurality of groups of thermometers, the stability of the temperature of the different steps is ensured by arranging the regulating and controlling devices at different positions, the cooling and heat-insulating precision of the silicon single crystal is improved, and the silicon single crystal meeting the quality of a terminal product is obtained.
Drawings
FIG. 1 is a schematic view of a single crystal furnace for controlling bulk micro-defect density of a silicon single crystal according to one embodiment of the present invention;
FIG. 2 is a schematic structural diagram of an independently arranged control member in a radially stacked arrangement according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of an independently arranged control member in a radially stacked arrangement according to another embodiment of the present invention;
FIG. 4 is a schematic structural diagram of an independently arranged control member arranged in an axially stacked manner according to an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of an axially offset independently arranged control member according to an embodiment of the present invention;
FIG. 6 is a schematic structural diagram of an axially offset independently arranged control member according to another embodiment of the present invention;
fig. 7 is a schematic structural diagram of a tuning control component of interworking setup according to an embodiment of the present invention.
In the figure:
10. main chamber 20, sub-chamber 30, silicon single crystal
40. Temperature measuring device 41, first temperature measuring instrument 42 and second temperature measuring instrument
43. Third thermometer 50, first regulating and controlling device 51 and first regulating and controlling part
52. Second control part 53, heating part 54 and cooling part
Detailed Description
The utility model is described in detail below with reference to the figures and the specific embodiments.
This example proposes a single crystal furnace capable of controlling the bulk micro-defect density of a silicon single crystal, as shown in FIG. 1,
a temperature measuring device 40 for monitoring the temperature gradient of an equal-diameter section of a pulled silicon single crystal 30 and a regulating device 50 for regulating the temperature gradient of the equal-diameter section are arranged in a furnace body of the single crystal furnace, the temperature measuring device 40 and the regulating device 50 are fixedly arranged on the inner side of the furnace body, and the regulating device 50 is arranged around the outer diameter of the equal-diameter section.
Specifically, the temperature measuring device 40 comprises a first temperature measuring instrument 41, a second temperature measuring instrument 42 and a third temperature measuring instrument 43 which are arranged along the height of the equal-diameter section of the silicon single crystal 30, and the first temperature measuring instrument 41, the second temperature measuring instrument 42 and the third temperature measuring instrument 43 are used for measuring the temperature of different positions and heights of the equal-diameter section of the silicon single crystal 30. The thermometers are all instruments on the market, are covered by a high-temperature-resistant glass cover, and directly penetrate through the light beam to be perpendicular to the outer surface of the silicon single crystal 30 so as to measure the surface temperature of the equal-diameter section. All data are transmitted to an external controller in real time, and the controller can automatically judge whether the temperature of the position where the temperature measuring instrument is located meets the standard temperature or not.
Wherein, the first thermodetector 31 is positioned in the main chamber 10 of the single crystal furnace and positioned on a furnace cover which is obliquely arranged above the guide cylinder in the main chamber 10; the second temperature measuring instrument 32 and the third temperature measuring instrument 33 are both positioned in the auxiliary chamber 20 of the single crystal furnace, and the second temperature measuring instrument 32 is positioned below the third temperature measuring instrument 33. Since the temperature in the constant diameter section is decreased stepwise in the pulling direction of the silicon single crystal 30, that is, the temperature on the side close to the solid-liquid interface is higher than the temperature on the side away from the solid-liquid interface, it can be seen that the temperature at the position of the first thermometer 31 is the highest, the temperature at the position of the third thermometer 33 is the lowest, and the temperature at the position of the second thermometer 32 is between the first thermometer 31 and the third thermometer 33.
Since the temperature of the solid-liquid interface at the start of growth of the silicon single crystal 30 is about 1420 ℃ during the growth, the equilibrium temperature can be maintained due to point defects generated at the solid-liquid interface, that is, the gaps and vacancies at the solid-liquid interface are balanced. The silicon single crystal 30 is continuously pulled upward after being solidified, the temperature of the constant diameter section after leaving the solid-liquid interface starts to be gradually reduced with the rising of the silicon single crystal 30, the temperature of the constant diameter section of the silicon single crystal 30 starts to be reduced from 1400 ℃, at this time, oxygen in the constant diameter section of the silicon single crystal 30 starts to diffuse to the outside of the silicon single crystal 30, and gaps and vacancies in the constant diameter section of the silicon single crystal 30 start to recombine and form point defects. When the temperature is reduced to 1150 ℃, supersaturated point defects begin to precipitate, and point micro-defects are formed. When the equal-diameter section of the silicon single crystal 30 continues to move upwards, and the point micro-defect in the silicon single crystal 30 is reduced to 950 ℃ from 1150 ℃, the point micro-defect consumes the adjacent point defect, so that the vacancy defect and oxygen are polymerized to form an oxygen compound, and the point micro-defect starts to nucleate, grow and expand. When the temperature of the silicon single crystal 30 is continuously lowered from 950 ℃ to 600 ℃, vacancies and oxygen atoms form oxygen polymers, and the remaining vacancy point defects promote the nucleation of oxygen precipitates to form bulk micro-defects. It can be seen that the temperature range in which point defects exist is 1150-1400 ℃; the nucleation temperature range of the point micro-defects is 950-1150 ℃; the nucleation temperature range of the bulk micro-defects is 600-950 ℃. Therefore, the positions of the temperature measuring device 40 and the regulating device 50 are divided along the nucleation temperature of the point microdefect and the nucleation temperature of the body microdefect in the equal-diameter section of the silicon single crystal 30, the temperature between the first temperature measuring instrument 41 and the second temperature measuring instrument 42 is higher than the temperature between the second temperature measuring instrument 42 and the third temperature measuring instrument 43, the height between the first temperature measuring instrument 41 and the second temperature measuring instrument 42 is the height of the point microdefect nucleation temperature path, and the height between the second temperature measuring instrument 42 and the third temperature measuring instrument 43 is the height of the body microdefect nucleation temperature path. Therefore, the height from the first thermometer 41 to the solid-liquid interface is 500-600 mm; the height from the position of the second thermometer 32 to the solid-liquid interface is 700-900 mm; the height from the third position of the thermodetector 33 to the solid-liquid interface is 800-1000 mm. The regulating device 50 comprises a first regulating part 51 and a second regulating part 52, wherein the first regulating part 51 is arranged between the first thermometer 41 and the second thermometer 42 and is positioned at one side of the main chamber 10 of the single crystal furnace, which is close to the cavity, and is used for regulating the temperature of the equal-diameter section between the first thermometer 41 and the second thermometer 42, namely for regulating the density of the point micro-defects in the equal-diameter section of the silicon single crystal 30; the second adjusting and controlling part 52 is fixedly arranged between the second thermometer 42 and the third thermometer 43 and is used for adjusting the temperature of the equal-diameter section between the second thermometer 42 and the third thermometer 43, namely for adjusting the density of the bulk micro defects in the equal-diameter section of the silicon single crystal 30.
Further, the first control element 51 and the second control element 52 have the same structure, and may be connected to each other or may be independently arranged, but the first control element 51 and the second control element 52 must be connected to the controller respectively. The first regulating member 51 and the second regulating member 52 both comprise a heating part 53 and a cooling part 54, and the heating part 53 and the cooling part 54 are arranged independently or in communication, and the structure is shown in fig. 2-5.
When the heating part 53 and the cooling part 54 are independently provided, as shown in fig. 2 to 7,
the heating part 53 and the cooling part 54 are radially overlapped and include the heating part 53 and the cooling part 54 which are arranged at the same height, as shown in fig. 2; or a heating section 53 and a cooling section 54 which are provided in a vertically offset manner, as shown in fig. 3. In this case, the heating section 53 is built in the cooling section 53 in order to reduce the transient temperature drop of the silicon single crystal 30, slow the heat radiation rate, and increase the temperature gradient.
Alternatively, as shown in fig. 4, the heating part 53 and the cooling part 54 are stacked in the axial direction, and preferably, the heating part 53 is provided at upper and lower ends of the cooling part 54, in order to improve convenience of temperature adjustment between the measured equal diameter sections, in this case, the lower end may be the heating part 53, and the upper end may be the cooling part 54 (the drawing is omitted); the height of the heating part 53 and the height of the cooling part 54 may be determined according to actual conditions, and is not particularly limited.
Alternatively, as shown in fig. 5, the heating portions 53 and the cooling portions 54 are axially offset, and the heating portions 53 and the cooling portions 54 are alternately arranged in a crossing manner, that is, the heating portions 53 and the cooling portions 54 are both in a spring-like pipe structure, and the heating portions 53 and the cooling portions 54 are alternately arranged one above the other. Of course, a structure with staggered layers can also be adopted, as shown in fig. 6.
In the above embodiment, all the heating portions 53 may be provided by winding heating wires, or may be provided by winding electromagnetic sheets; the cooling part 53 is formed by winding a cold accumulation sheet or a cold water pipeline.
In operation, when the temperature measured by the first thermometer 41 is less than the standard value, only the heating part 53 is opened and the cooling part 54 is closed; or both the heating section 53 and the cooling section 54 are opened, and the heating temperature of the heating section 53 is higher than the cooling temperature of the cooling section 54, the surface of the silicon single crystal 30 can be heated so that the temperature thereof is kept within the standard temperature range. Accordingly, when the temperature measured by the first thermometer 41 is greater than the standard value, only the cooling part 54 may be opened and the heating part 53 may be closed; or both the heating section 53 and the cooling section 54 are opened and the heating temperature of the heating section 53 is lower than the cooling temperature of the cooling section 54, the surface of the silicon single crystal 30 can be cooled so that the temperature thereof is kept within the standard temperature range. Controlling different positions of all the equal-diameter sections within a standard temperature range, and keeping the same for a certain time to obtain the silicon single crystal with the required bulk micro-defects with different content densities so as to adapt to the standards required by different end products.
When the heating part 53 and the cooling part 54 are arranged to communicate with each other, as shown in fig. 7, the heating part 53 and the cooling part 54 share the same pipe 56, water is introduced into the pipe 56, and when heating is required, hot water is introduced; when cooling is needed, cold water is introduced, and the heating or cooling effect can be obtained.
The single crystal furnace capable of controlling the bulk micro defect density of the silicon single crystal is adopted, the temperature of steps at different positions in the equal-diameter section of the silicon single crystal is monitored by arranging a plurality of groups of temperature measuring instruments, the stability of the temperatures of the different steps is ensured by arranging regulating and controlling devices at different positions, and the cooling and heat preservation precision of the silicon single crystal is improved, so that the silicon single crystal meeting the quality of terminal produced wafers is obtained.
The embodiments of the present invention have been described in detail, and the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the utility model. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.

Claims (10)

1. The single crystal furnace capable of controlling the bulk micro defect density of the silicon single crystal is characterized in that a temperature measuring device for monitoring the temperature gradient of a pulled silicon single crystal constant diameter section and a regulating and controlling device for regulating and controlling the temperature gradient of the constant diameter section are arranged in a furnace body of the single crystal furnace, the temperature measuring device and the regulating and controlling device are fixedly arranged on the inner side of the furnace body, and the regulating and controlling device is arranged around the outer diameter of the constant diameter section.
2. A single crystal furnace capable of controlling the bulk micro defect density of a silicon single crystal according to claim 1, wherein the temperature measuring device comprises a first temperature measuring instrument, a second temperature measuring instrument and a third temperature measuring instrument which are arranged along the height of the constant diameter section of the silicon single crystal, and the first temperature measuring instrument, the second temperature measuring instrument and the third temperature measuring instrument are used for measuring the temperature of different positions and heights of the constant diameter section of the silicon single crystal.
3. A single crystal growing furnace capable of controlling the bulk micro defect density of a silicon single crystal according to claim 2, wherein said temperature measuring instrument is located in a main chamber of said single crystal growing furnace;
the second temperature measuring instrument and the third temperature measuring instrument are both positioned in the auxiliary chamber of the single crystal furnace;
and the second thermometer is positioned below the third thermometer.
4. A single crystal furnace as claimed in claim 2 or 3 wherein the height from the first thermometer to the solid-liquid interface is 500-600 mm.
5. The single crystal furnace as claimed in claim 4, wherein the height from the second thermometer to the solid-liquid interface is 700-900 mm;
the height from the third temperature measuring instrument to the solid-liquid interface is 800-1000 mm.
6. A single crystal furnace capable of controlling the bulk micro defect density of a silicon single crystal according to any one of claims 2-3 and 5, wherein the regulating device comprises a first regulating part and a second regulating part, the first regulating part and the second regulating part have the same structure and both comprise a heating part and a cooling part, and the heating part and the cooling part are independently arranged or arranged in a mutual communication manner.
7. A single crystal furnace of controlling bulk micro defect density of a silicon single crystal according to claim 6, wherein when said heating section and said cooling section are provided independently,
the heating part and the cooling part are radially overlapped, and the heating part is arranged in the cooling part; or the heating part and the cooling part are axially stacked, and the heating part is arranged at the upper end and the lower end of the cooling part;
or the heating part and the cooling part are arranged in an axially staggered mode, and the heating part and the cooling part are arranged in a crossed mode at intervals.
8. A single crystal furnace according to claim 6, wherein when the heating section and the cooling section are provided in communication, the heating section and the cooling section share a common conduit.
9. A single crystal furnace as claimed in claim 7 or 8, wherein the first temperature measuring device is disposed between the first temperature measuring device and the second temperature measuring device, and is located in the main chamber of the single crystal furnace near the neck cavity.
10. A single crystal furnace as claimed in claim 9, wherein the second control means is provided between the second temperature measuring device and the third temperature measuring device.
CN202123017512.3U 2021-11-30 2021-11-30 Single crystal furnace capable of controlling bulk micro-defect density of silicon single crystal Active CN216947284U (en)

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CN202123017512.3U CN216947284U (en) 2021-11-30 2021-11-30 Single crystal furnace capable of controlling bulk micro-defect density of silicon single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202123017512.3U CN216947284U (en) 2021-11-30 2021-11-30 Single crystal furnace capable of controlling bulk micro-defect density of silicon single crystal

Publications (1)

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CN216947284U true CN216947284U (en) 2022-07-12

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