CN216902795U

CN216902795U - Wafer processing equipment

Info

Publication number: CN216902795U
Application number: CN202123382538.8U
Authority: CN
Inventors: 柴雪; 李晶; 野沢俊久
Original assignee: Piotech Inc
Current assignee: Piotech Inc
Priority date: 2021-12-29
Filing date: 2021-12-29
Publication date: 2022-07-05
Anticipated expiration: 2031-12-29

Abstract

The utility model provides a wafer processing device, which comprises a reaction chamber, a feeding device, a processing device, a supporting seat and an insulating piece, wherein the reaction chamber is provided with a feeding hole; the reaction chamber is provided with a first through hole, the feeding device is communicated with the first through hole, the processing device is arranged in the reaction chamber corresponding to the first through hole, and the supporting seat is arranged corresponding to the processing device; the insulator is arranged in the first through hole and used for preventing the plasma from entering the first through hole. According to the wafer processing equipment, the reaction chamber is arranged to provide a wafer processing place, the feeding device is arranged to provide raw materials for wafer processing, the supporting seat is arranged to support the wafer, the processing device is arranged to spray plasma to the wafer and process the wafer, meanwhile, the insulating piece is arranged to prevent the plasma generated by the processing device from entering the feeding pipe and the first through hole of the material processing device, and the feeding pipe and the reaction chamber at the first through hole can be protected.

Description

Wafer processing equipment

Technical Field

The utility model relates to the technical field of semiconductor processing, in particular to wafer processing equipment.

Background

Wafer processing is used to process semiconductors by techniques including: physical Vapor Deposition (PVD), Chemical Vapor Deposition (CVD), Plasma Enhanced Chemical Vapor Deposition (PECVD), Atomic Layer Deposition (ALD), Plasma Enhanced Atomic Layer Deposition (PEALD), Pulse Deposition Layer (PDL), Molecular Layer Deposition (MLD), Plasma Enhanced Pulse Deposition Layer (PEPDL) processing, etching, and resist removal, among others.

During plasma processing of wafers, the plasma can reverse direction into the feed conduit as the process progresses. In order to obtain more processing effects, under certain specific conditions, the phenomenon that plasma is ignited or generates electric arc in the feeding pipeline can occur, so that the problem of damaging the feeding pipeline is easily caused

SUMMERY OF THE UTILITY MODEL

The utility model aims to provide wafer processing equipment, which can prevent plasma from entering a feeding pipeline by arranging an insulating part so as to solve the problem that the feeding pipeline is easy to damage in the prior art.

In order to achieve the purpose, the utility model provides wafer processing equipment, which comprises a reaction chamber, a feeding device, a processing device, a supporting seat and an insulating piece, wherein the reaction chamber is provided with a feeding hole; the reaction chamber is provided with a first through hole, the feeding device is communicated with the first through hole, the processing device is arranged in the reaction chamber corresponding to the first through hole, the supporting seat is arranged corresponding to the processing device, the supporting seat is used for placing a wafer, the feeding device is used for providing raw materials for the processing device, and the processing device is used for generating plasma and processing the wafer; the insulator is arranged in the first through hole and used for preventing plasma from entering the first through hole.

The wafer processing equipment has the beneficial effects that: through setting up reaction chamber provides the place of wafer processing, through setting up feedway provides the raw materials of wafer processing, through setting up the supporting seat supports the wafer, through setting up processingequipment sprays plasma to the wafer and processes the wafer, simultaneously through setting up the insulating part can obstruct the plasma that processingequipment produced gets into the feeder pipe of worker material device with first through-hole can be right the feeder pipe with the reaction chamber of first through-hole department forms the protection.

In one possible embodiment, the insulating member is disposed in a hollow space, and the insulating member is disposed coaxially with the first through hole. The beneficial effects are that: through insulating part cavity sets up, just insulating part with the coaxial setting of first through-hole can be right 360 protection of first through-hole department formation is convenient for simultaneously also even entering of feedway's raw materials in the reaction chamber.

In one possible embodiment, the insulating element has a first section and a second section, and the first section and the second section have different diameters. The beneficial effects are that: through setting up first section with the second section, and will first section the diameter of second section sets up to the difference, can promote the insulating part hinders the ability that plasma got into first through-hole.

In one possible embodiment, the insulating element is provided with an arc-shaped section. The beneficial effects are that: through set up the segmental arc at the insulating part, can promote the insulating part hinders the ability that plasma got into first through-hole.

In one possible embodiment, the arc segments are provided in at least two. The beneficial effects are that: by arranging the arc-shaped sections into two or more, multiple obstacles can be arranged, and the capability of the insulating member for preventing plasma from entering the first through hole is further improved.

In a possible scheme, the device further comprises a discharging device; the reaction chamber is provided with a second through hole, the discharging device is communicated with the reaction chamber through the second through hole, and the discharging device is used for pumping out raw materials in the reaction chamber. The beneficial effects are that: through setting up discharge device can with the raw materials of complete reaction or the exhaust gas after the reaction in the reaction chamber discharge, and can with feedway cooperation, the raw materials in the reaction chamber that promotes flows, promotes the normal operating of technology processing.

In a feasible scheme, the position of the second through hole is higher than that of the supporting seat. The beneficial effects are that: because the density of the incompletely-reacted raw materials or the waste gas after reaction is lower than that of the raw materials, the position of the second through hole is arranged at a position higher than the supporting seat, and the discharge of the incompletely-reacted raw materials or the waste gas after reaction can be promoted.

In one possible embodiment, the discharge device comprises a valve, a discharge tube and a drive mechanism; arrange the one end of material pipe with the second through-hole intercommunication, arrange the other end of material pipe with actuating mechanism intercommunication, the valve set up in arrange the material pipe, actuating mechanism is used for passing through arrange the material pipe and take out raw materials in the reaction chamber, the valve is used for adjusting arrange the flow of material pipe. The beneficial effects are that: set up like this, make actuating mechanism passes through arrange the material pipe and can take out raw materials in the reaction chamber realizes the discharge of raw materials, and sets up the valve can be adjusted arrange the flow of material pipe or block arrange the material pipe.

In one possible solution, an exhaust ring is further included; the exhaust ring is arranged in the reaction cavity and divides the reaction cavity into a first cavity and a second cavity, a plurality of air holes are uniformly formed in the exhaust ring and are used for communicating the first cavity with the second cavity, the supporting seat is arranged in the first cavity, and the second through hole is communicated with the second cavity. The beneficial effects are that: through setting up the exhaust is traded to with the second through-hole with the second cavity intercommunication can form stable air exhaust effect to the first inner chamber of reaction chamber after being separated for the air current of first inner chamber flows more evenly, reduces the influence to technology processing.

In a possible scheme, the device further comprises a lifting device; the lifting device is arranged on the supporting seat and is far away from the processing device, and the lifting device is used for driving the supporting seat to move close to or far away from the processing mechanism. The beneficial effects are that: through setting up elevating gear is convenient for adjust the position of supporting seat, the transport of the wafer of being convenient for.

Drawings

FIG. 1 is a schematic perspective view of a wafer processing apparatus according to a first embodiment of the present invention;

FIG. 2 is a schematic cross-sectional view of the wafer processing apparatus of FIG. 1;

FIG. 3 is a schematic perspective view of the vent ring of FIG. 1;

FIG. 4 is a cross-sectional view of an insulating member according to a second embodiment of the present invention;

FIG. 5 is a schematic cross-sectional view of an insulating member according to a third embodiment of the present invention;

FIG. 6 is a cross-sectional view of an insulating member according to a fourth embodiment of the present invention;

FIG. 7 is a schematic cross-sectional view of an insulating member according to a fifth embodiment of the present invention;

fig. 8 is a schematic cross-sectional view of an insulating member according to a sixth embodiment of the present invention.

Reference numbers in the figures:

1. a reaction chamber;

2. a feeding device;

3. a processing device;

4. a supporting seat;

5. an insulating member; 501. a first section; 502. a second section; 503. an arc-shaped section;

6. a discharge device; 601. a valve; 602. a discharge pipe; 603. a drive mechanism;

7. an exhaust ring;

8. a lifting device.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without inventive step based on the embodiments of the present invention, are within the scope of protection of the present invention. Unless defined otherwise, technical or scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. As used herein, the word "comprising" and similar words are intended to mean that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items.

To solve the problems in the prior art, embodiments of the present invention provide a wafer processing apparatus.

Fig. 1 is a schematic perspective view of a wafer processing apparatus according to a first embodiment of the present invention, and fig. 2 is a schematic cross-sectional view of the wafer processing apparatus shown in fig. 1.

In some embodiments of the present invention, referring to fig. 1 and 2, the wafer processing apparatus includes: the device comprises a reaction chamber 1, a feeding device 2, a processing device 3, a supporting seat 4 and an insulating piece 5; the reaction chamber 1 is provided with a first through hole, the feeding device 2 is communicated with the first through hole, the processing device 3 is arranged in the reaction chamber 1 corresponding to the first through hole, the supporting seat 4 is arranged corresponding to the processing device 3, the supporting seat 4 is used for placing a wafer, the feeding device 2 is used for providing raw materials for the processing device 3, and the processing device 3 is used for generating plasma and processing the wafer; the insulator 5 is disposed in the first through hole, and the insulator 5 is used for preventing plasma from entering the first through hole. The insulating part 5 is arranged in a hollow mode, and the insulating part 5 and the first through hole are arranged coaxially.

In some embodiments of the present invention, the reaction chamber 1 is horizontally disposed, the reaction chamber 1 is provided with a hollow inner cavity, the supporting base 4 is horizontally disposed in the inner cavity of the reaction chamber 1, the processing device 3 is horizontally disposed on the upper side of the supporting base 4, the first through hole is disposed on the upper side wall of the reaction chamber 1 on the upper side of the processing device 3, and the feeding device 2 is communicated with the first through hole through a feeding pipe.

The insulating part 5 is made of ceramic materials, so that the insulating part 5 can resist high temperature, reduce the adsorption force to plasma and is convenient to manufacture. The insulating part 5 is cylindrical, the hollow part of the insulating part 5 is arranged coaxially with the insulating part 5, and the insulating part 5 and the first through hole are arranged coaxially.

When the device is used, the feeding device 2 provides raw materials for technological processing to the reaction chamber 1 through the feeding pipe, the raw materials enter the reaction chamber 1 through the hollow part of the insulating part 5, at the moment, the raw materials are positioned on the upper side of the processing device 3, and the processing device 3 is started to generate plasma according to the raw materials to process wafers on the supporting seat 4. Along with the processing, the plasma that processingequipment 3 produced can progressively outdiffusion, when diffusing extremely during first through-hole department, because the insulator 5's the reason can hinder plasma to in the first through-hole or to move in the feed pipe for the wafer processing equipment of this application can be suitable for under higher radio frequency power and lower pressure condition, can obtain higher technology processing result.

Fig. 4 is a schematic cross-sectional view of an insulating member according to a second embodiment of the present invention.

In some embodiments of the present invention, referring to fig. 1, 2 and 4, the insulating member 5 is provided with a first section 501 and a second section 502, and the first section 501 and the second section 502 have different diameters.

In some embodiments of the present invention, the difference in diameter refers to a difference in diameter between hollow portions of the first section 501 and the second section 502, the first section 501 and the second section 502 are both in a circular tube shape, the diameter of the second section 502 is smaller than that of the first section 501, and a chamfer is provided between the first section 501 and the second section 502.

It should be noted that, since the outer side wall of the insulating member 5 is closely attached to the first through hole, the shape of the outer side portion of the insulating member 5 does not affect the process feeding and the prevention of the plasma from entering the first through hole.

Fig. 5 is a schematic cross-sectional view of an insulating member according to a third embodiment of the present invention, and fig. 6 is a schematic cross-sectional view of an insulating member according to a fourth embodiment of the present invention.

In some embodiments of the present invention, referring to fig. 2, 5 and 6, the insulator 5 is provided with an arcuate section 503.

In some embodiments of the present invention, a part of the hollow of the insulating member 5 is configured as a straight line segment, and another part of the hollow is configured as the arc segment 503.

In some embodiments, the hollow of the insulating member 5 is integrally formed as an arc-shaped segment 503.

Fig. 7 is a schematic cross-sectional view of an insulating member according to a fifth embodiment of the present invention, and fig. 8 is a schematic cross-sectional view of an insulating member according to a sixth embodiment of the present invention.

In some embodiments of the present invention, referring to fig. 2, 5 and 6, the arcuate segments 503 are provided in at least two.

In some embodiments of the present invention, the hollow of the insulating member 5 is provided with a corrugated shape, and the corrugated shape is composed of a plurality of the arc-shaped sections 503.

In some embodiments of the present invention, referring to fig. 1 and 2, a discharge device 6 is further included; the reaction chamber 1 is provided with a second through hole, the discharging device 6 is communicated with the reaction chamber 1 through the second through hole, and the discharging device 6 is used for pumping out raw materials in the reaction chamber 1. The second through hole is higher than the support seat 4.

In some embodiments of the present invention, the second through hole is disposed on a side wall of the reaction chamber 1, and the position of the second through hole is higher than that of the support seat 4, the discharging device 6 is disposed outside the reaction chamber 1, and the discharging device 6 is communicated with the second through hole. In use, the discharge device 6 is opened to draw out the materials in the reaction chamber 1.

In some embodiments of the present invention, referring to fig. 1 and 2, the discharge device 6 comprises a valve 601, a discharge tube 602, and a drive mechanism 603;

one end of the material discharge pipe 602 is communicated with the second through hole, the other end of the material discharge pipe 602 is communicated with the driving mechanism 603, the valve 601 is arranged on the material discharge pipe 602, the driving mechanism 603 is used for extracting the raw material in the reaction chamber 1 through the material discharge pipe 602, and the valve 601 is used for adjusting the flow rate of the material discharge pipe 602.

In some embodiments of the present invention, the driving mechanism 603 is a suction pump, and the suction pump is communicated with the second through hole through the discharging pipe 602. The valve 601 is a manual valve, such as a butterfly valve, the valve 601 is disposed on the flat discharge pipe 602, and the valve 601 is used for adjusting the flow rate of the discharge pipe 602.

Fig. 3 is a schematic perspective view of the exhaust ring of fig. 1.

In some embodiments of the present invention, referring to fig. 1-3, further comprising a vent ring 7; the exhaust ring 7 is arranged in the reaction chamber 1, the reaction chamber 1 is divided into a first chamber and a second chamber by the exhaust ring 7, the exhaust ring 7 is uniformly provided with a plurality of air holes, each air hole is used for communicating the first chamber with the second chamber, the supporting seat 4 is arranged in the first chamber, and the second through hole is communicated with the second chamber.

In some embodiments of the present invention, the exhaust ring 7 is disposed at an upper portion of an inner side of the reaction chamber 1, the exhaust ring 7 has an L-shaped cross section, a space of the reaction chamber 1 at an outer side of the exhaust ring is the second chamber, and a space of the reaction chamber 1 at an inner side of the exhaust ring is the second chamber. The second through hole is arranged on the side wall of the second chamber. The exhaust exchanger is uniformly provided with a plurality of air holes, and the air holes are communicated with the first cavity and the second cavity. When the device is used, the driving mechanism 603 is started, the discharge pipe 602 provides suction to the second through hole, the air pressure in the second chamber is reduced, and materials such as materials and gas in the first inner cavity enter the second chamber through the air holes.

In some embodiments of the utility model, referring to fig. 1 and 2, a lifting device 8 is further included;

the lifting device 8 is arranged on the supporting seat 4 and far away from the processing device 3, and the lifting device 8 is used for driving the supporting seat 4 to move close to or far away from the processing mechanism.

In some embodiments of the present invention, the lifting device 8 is a cylinder or a linear motor, a through hole is formed in a lower side surface of the reaction chamber 1, the lifting device 8 is disposed at a lower side of an exterior of the reaction chamber 1, a movable portion of the lifting device 8 extends into the reaction chamber 1 through the through hole, the supporting seat 4 is disposed at a top end of the movable portion of the lifting device 8, and the lifting device 8 is configured to drive the supporting seat 4 to move up and down.

Although the embodiments of the present invention have been described in detail hereinabove, it is apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it is to be understood that such modifications and variations are within the scope and spirit of the present invention as set forth in the following claims. Moreover, the utility model as described herein is capable of other embodiments and of being practiced or of being carried out in various ways.

Claims

1. A wafer processing device is characterized by comprising a reaction chamber, a feeding device, a processing device, a supporting seat and an insulating piece;

the reaction chamber is provided with a first through hole, the feeding device is communicated with the first through hole, the processing device is arranged in the reaction chamber corresponding to the first through hole, the supporting seat is arranged corresponding to the processing device, the supporting seat is used for placing a wafer, the feeding device is used for providing raw materials for the processing device, and the processing device is used for generating plasma and processing the wafer;

the insulator is arranged in the first through hole and used for preventing plasma from entering the first through hole.

2. The wafer processing apparatus of claim 1, wherein the insulator is disposed hollow and is disposed coaxially with the first through hole.

3. The wafer processing apparatus of claim 1 or 2, wherein the insulator is provided with a first section and a second section, and the first section and the second section have different diameters.

4. The wafer processing apparatus of claim 1 or 2, wherein the insulator is provided with an arc-shaped section.

5. The wafer processing apparatus of claim 4, wherein the arcuate segments are arranged in at least two.

6. The wafer processing apparatus of claim 1, further comprising a discharge device;

the reaction chamber is provided with a second through hole, the discharging device is communicated with the reaction chamber through the second through hole, and the discharging device is used for pumping out raw materials in the reaction chamber.

7. The wafer processing apparatus as claimed in claim 6, wherein the second through hole is located higher than the support base.

8. The wafer processing apparatus according to claim 6 or 7, wherein the discharge device comprises a valve, a discharge tube and a drive mechanism;

arrange the one end of material pipe with the second through-hole intercommunication, arrange the other end of material pipe with actuating mechanism intercommunication, the valve set up in arrange the material pipe, actuating mechanism is used for passing through arrange the material pipe and take out raw materials in the reaction chamber, the valve is used for adjusting arrange the flow of material pipe.

9. The wafer processing apparatus of claim 8, further comprising an exhaust ring;

the exhaust ring is arranged in the reaction chamber, the reaction chamber is divided into a first chamber and a second chamber by the exhaust ring, a plurality of air holes are uniformly formed in the exhaust ring, the air holes are used for communicating the first chamber with the second chamber, the supporting seat is arranged in the first chamber, and the second through hole is communicated with the second chamber.

10. The wafer processing apparatus according to claim 1 or 2, further comprising a lifting device;

the lifting device is arranged on the supporting seat and far away from the processing device, and the lifting device is used for driving the supporting seat to move close to or far away from the processing device.