CN216898402U - Indirect temperature regulating device for high-temperature silicon wafer - Google Patents
Indirect temperature regulating device for high-temperature silicon wafer Download PDFInfo
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- CN216898402U CN216898402U CN202123397671.0U CN202123397671U CN216898402U CN 216898402 U CN216898402 U CN 216898402U CN 202123397671 U CN202123397671 U CN 202123397671U CN 216898402 U CN216898402 U CN 216898402U
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Abstract
The utility model discloses an indirect temperature control device for a high-temperature silicon wafer, which comprises at least one group of debugging thermocouples and thermocouples, wherein the debugging thermocouples are used for detecting the temperature value of the silicon wafer, the thermocouples are used for detecting the temperature value of the area where a quartz tube and an electric furnace wire component are located, and the difference value between the temperature value detected by the debugging thermocouples and the temperature value detected by the thermocouples is set as the temperature deviation compensation value of the thermocouples.
Description
Technical Field
The utility model belongs to the field of semiconductors, and relates to an indirect temperature control device for a high-temperature silicon wafer.
Background
The utility model has the advantages that the temperature of the silicon wafer is well controlled, which is one of the most important steps of the silicon wafer manufacturing process, the measurement of the temperature of the silicon wafer in the high-temperature vacuum environment in the prior art is a difficult point, toxic and harmful gases are involved in the production of the silicon wafer in the high-temperature vacuum environment, a thermocouple needs to be protected, the cost is increased virtually to protect the thermocouple, the temperature response speed is reduced, an R-type thermocouple cannot extend into the silicon wafer, only the peripheral local temperature of the R-type thermocouple can be measured, the temperature of the silicon wafer is indirectly estimated, the actual temperature of the silicon wafer cannot be truly fed back in the actual production, the temperature response is slow, the temperature response time is long, overshoot is easy during temperature control, the temperature control difficulty is large, the installation is complex, and the problem is effectively solved.
Disclosure of Invention
The utility model provides a high-temperature silicon wafer indirect temperature control device for overcoming the defects of the prior art.
In order to achieve the purpose, the utility model adopts the following technical scheme: an indirect temperature control device for a high-temperature silicon wafer is characterized in that: the temperature compensation device comprises at least one group of debugging thermocouples and thermocouples, wherein the debugging thermocouples are used for detecting the temperature values of silicon wafers, the thermocouples are used for detecting the temperature values of the areas where the quartz tubes and the electric furnace wire assemblies are located, and the difference value between the temperature values detected by the debugging thermocouples and the temperature values detected by the thermocouples is set as the temperature deviation compensation value of the thermocouples.
Further, the method comprises the following steps of; the quartz tube is arranged in a hearth of the furnace body, a heat insulation material and an electric furnace wire assembly are arranged in the hearth, a reaction chamber is arranged in the quartz tube, the silicon wafer is positioned in the reaction chamber, a furnace door is arranged at one end of the quartz tube, and the reaction chamber is formed into a closed high-temperature vacuum space by the furnace door.
Further, the method comprises the following steps of; the electric furnace wire component is composed of a plurality of electric furnace wires which are controlled independently, the electric furnace wires are distributed along the length direction of the quartz tube, so that the temperatures of the silicon wafers in different silicon wafer groups in the length direction of the quartz tube synchronously reach the process temperature, or/and the electric furnace wires are distributed along the circumferential direction of the quartz tube, so that the temperatures of the silicon wafers in different positions of the same silicon wafer group synchronously reach the same temperature value or the same process temperature value.
Further, the method comprises the following steps of; the silicon wafers are stacked and installed to form silicon wafer groups, the silicon wafer groups are sequentially distributed at intervals along the length direction of the quartz tube, and one silicon wafer group is formed by stacking the silicon wafers in the radial direction of the quartz tube.
Further, the method comprises the following steps of; silicon wafer gaps are formed between adjacent silicon wafers in the silicon wafer group, the silicon wafer gaps of different silicon wafer groups correspond to one another, the debugging thermocouple is inserted into the reaction cavity along the direction of the furnace door or the direction of the furnace tail, and the silicon wafer gaps corresponding to the silicon wafer groups are sequentially inserted.
Further, the method comprises the following steps of; the debugging thermocouple is fixedly provided with a plurality of detection points, the detection points are distributed along the length direction of the debugging thermocouple, and the number of the detection points is matched with that of the silicon wafer groups of the quartz tube.
Further, the method comprises the following steps of; the thermocouple is arranged in the furnace body, penetrates through the heat insulation material and the electric furnace wire assembly, extends into the hearth and is positioned on the outer side of the quartz tube.
Further, the method comprises the following steps of; the debugging thermocouples are arranged in multiple groups, the multiple groups of debugging thermocouples are inserted into the reaction chamber along the direction of the furnace door or the furnace tail and are inserted into the silicon wafer gaps, and the multiple groups of debugging thermocouples are used for detecting the temperatures of the silicon wafers at different positions in the length direction of the reaction chamber and the temperatures of the silicon wafers at different positions of the silicon wafer group.
Further, the method comprises the following steps of; the thermocouple is provided with a plurality of groups, and is uniformly distributed along the length direction of the furnace body, and is used for detecting the temperature of different positions of the hearth, and the number and the positions of the thermocouples are matched with those of the silicon wafer groups.
Further, the method comprises the following steps of; and a plurality of silicon wafers are stacked along the axial direction of the quartz tube.
In conclusion, the utility model has the advantages that:
1) the utility model adopts the matching mode of debugging the thermocouple and the thermocouple, cancels the temperature measurement of the existing internal thermocouple, simplifies the installation mechanism of the thermocouple and improves the installation efficiency.
2) The utility model adopts the matching mode of the debugging thermocouple and the thermocouple, cancels the temperature measurement of the existing internal thermocouple, correspondingly reduces the control electric appliances and simplifies the control circuit and the temperature control software.
3) The utility model adopts the matching mode of debugging the thermocouple and the thermocouple, cancels the temperature measurement of the existing inner thermocouple and reduces the cost.
4) The thermocouple of the utility model is very close to the electric furnace wire, has fast temperature response speed, high efficiency and easy and accurate control, and can quickly solve the over-temperature phenomenon.
5) The utility model detects the temperature of the center of the silicon chip by debugging the thermocouple, the temperature reflected by the thermocouple is the actual temperature of the silicon chip, and the temperature is more accurate.
6) The utility model adopts the matching mode of debugging the thermocouple and the thermocouple, cancels the temperature measurement of the existing internal thermocouple, saves a protective tube and can reduce the pollution of the silicon chip.
Drawings
FIG. 1 is a schematic view of the apparatus of the present invention.
FIG. 2 is a circumferential cut-away view of the apparatus of the present invention.
The labels in the figure are: the device comprises a heat insulation material 1, an electric furnace wire component 2, a quartz tube 3, a silicon wafer gap 4, a furnace body 5, a thermocouple 6, a silicon wafer 8, a reaction chamber 9, a furnace door 10 and a debugging thermocouple 11.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The utility model is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict.
It should be noted that the drawings provided in the following embodiments are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
All directional indicators (such as up, down, left, right, front, rear, lateral, longitudinal … …) in the embodiments of the present invention are only used to explain the relative positional relationship between the components, the movement, etc. in a particular posture, and if the particular posture is changed, the directional indicator is changed accordingly.
The first embodiment is as follows:
as shown in fig. 1-2, an indirect temperature control device for a high-temperature silicon wafer comprises at least one set of a debugging thermocouple 11 and a thermocouple 6, wherein the debugging thermocouple 11 is used for detecting a temperature value of a silicon wafer 8, the thermocouple 6 is used for detecting a temperature value of an area where a quartz tube 3 and an electric furnace wire assembly 2 are located, and a difference value between the temperature value detected by the debugging thermocouple 11 and the temperature value detected by the thermocouple 6 is set as a temperature deviation compensation value of the thermocouple 6.
The thermocouple 6 detects the temperature of the area where the quartz tube 3 and the electric furnace wire component 2 are located, the temperature deviation compensation value compensates the temperature detection value of the thermocouple 6, the temperature of the silicon wafer 8 is obtained through the temperature value detected by the thermocouple 6, and the temperature of the silicon wafer 8 is indirectly controlled through the temperature value detected by the thermocouple 6.
According to the embodiment, a group of silicon slices is formed by radially stacking a plurality of silicon slices 8 in the reaction chamber 9 according to the visual angle shown in fig. 1, the silicon slices 8 are horizontally arranged, and the silicon slices 8 are parallel to the process airflow direction in the reaction chamber 9.
The electric furnace wire component 2 can be composed of a plurality of independently controlled electric furnace wires, the electric furnace wires can be distributed along the length direction of the quartz tube 3, so that the temperatures of the silicon wafers 8 positioned in different silicon wafer groups in the length direction of the quartz tube 3 synchronously reach the process temperature, or/and the electric furnace wires can be distributed along the circumferential direction of the quartz tube 3, so that the temperatures of the silicon wafers 8 positioned in different positions of the same silicon wafer group synchronously reach the same temperature value or the same process temperature value.
The silicon wafer gaps 4 are arranged between adjacent silicon wafers 8 in any silicon wafer group, the silicon wafer gaps 4 of different silicon wafer groups are in one-to-one correspondence, a group of debugging thermocouples 11 is inserted into the reaction chamber 9 along the direction of a furnace door 10 or the direction of a furnace tail, and are sequentially inserted into the silicon wafer gaps 4 corresponding to the silicon wafer groups and are arranged on the surface of the silicon wafers 8, a plurality of detection points 111 are fixedly arranged on the debugging thermocouples 11, the detection points 111 are distributed along the length direction of the debugging thermocouples 11, the number of the detection points 111 is preferably matched with the number of the silicon wafer groups of the reaction chamber 9, so that the temperature of the silicon wafers of each silicon wafer group is detected, and the temperature of the silicon wafers of the silicon wafer groups located at different positions of the reaction chamber 9 is further detected.
The thermocouple 6 is arranged on the furnace body 5, specifically, the thermocouple 6 penetrates through the heat insulation material 1 and the electric furnace wire component 2, extends into the hearth, and is positioned on the outer side of the quartz tube 3, in the embodiment, the thermocouple 6 is arranged on the outer side of the quartz tube 3, a protective tube is not needed, the risk of silicon wafer pollution caused by the fact that the protective tube is fragile, metal such as a connection compensation wire, platinum and rhodium and the like can be subjected to chemical reaction with process gas is avoided, and the overall reliability is improved; in addition, the thermocouple 6 does not need to be inserted into the quartz tube 3 for temperature detection, so that a conventional K-type thermocouple can be adopted, and the cost is reduced; and the thermocouple 6 is close to the electric stove wire component 2, so the thermocouple 6 can easily feed back the temperature change of the electric stove wire component 2, namely, the thermocouple 6 has high temperature response speed and high efficiency, is easy to control accurately and can quickly solve the over-temperature phenomenon.
The thermocouples 6 are arranged in a plurality of groups and are uniformly distributed along the length direction of the furnace body 5, so that the temperatures of different positions of the furnace chamber are detected; preferably, the thermocouples 6 can be matched with the number and positions of the silicon wafer groups, so that the thermocouples 6 correspond to the debugging thermocouples 11.
The debugging thermocouple 11, the thermocouple 6 and the electric stove wire component 2 are all connected with a temperature controller.
The debugging thermocouples 11 can also be provided with a plurality of groups, the debugging thermocouples 11 are inserted into the reaction chamber 9 along the direction of the furnace door 10 or the direction of the furnace tail, and the silicon wafer gaps 4 are inserted, so that the temperature of the silicon wafers at different positions in the length direction of the reaction chamber 9 can be detected, and the temperature of the silicon wafers at different positions of the silicon wafer group can be detected; the accurate detection of the temperature of the silicon wafer is realized, the average value of the temperature values of the silicon wafer detected at each position is used as the temperature value of the silicon wafer, if the debugging thermocouples 11 can be arranged into three groups, one group of the debugging thermocouples 11 is inserted into the silicon wafer gaps 4 which are corresponding to a plurality of silicon wafer groups and are positioned above the silicon wafer, one group of the debugging thermocouples 11 is inserted into the silicon wafer gaps 4 which are corresponding to a plurality of silicon wafer groups and are positioned in the middle of the silicon wafer groups, and one group of the debugging thermocouples 11 is inserted into the silicon wafer gaps 4 which are corresponding to a plurality of silicon wafer groups and are positioned below the silicon wafer groups, so that the temperature of the silicon wafers positioned at different positions in the length direction of the reaction chamber 9 can be detected, and the temperature of the silicon wafers positioned at different positions of the silicon wafer groups can be detected; and the accurate detection of the temperature of the silicon wafer is realized.
In the implementation process of the embodiment, the debugging thermocouple 11 is inserted into the silicon wafer gaps 4 corresponding to a plurality of silicon wafer groups, the temperature controller controls the electric furnace wire component 2 to start to heat the reaction chamber 9, the debugging thermocouple 11 detects the temperature of the silicon wafer until the temperature of the silicon wafer 8 rises to the process temperature of a process section to be processed, when the temperature value of the silicon wafer 8 detected first by the detection point 111 at a certain position of the debugging thermocouple 11 reaches the process temperature, the temperature values of the silicon wafers 8 detected by other detection points 111 are lower than the process temperature, at the moment, the power or/and density of a plurality of independent electric furnace wires or/and wire diameter or/and number of electric furnace wires distributed along the circumferential direction of the quartz tube 3 in the region where the silicon wafer group A1 is located are controlled, the silicon wafers at different positions in the same silicon wafer group reach the same temperature, and the power or/and density or/and wire diameter of the independent electric furnace wires distributed along the length direction of the quartz tube 3 in the region where the silicon wafer group is located are controlled at the same time And/or the number of the electric furnace wires, so that the silicon wafers of different silicon wafer groups synchronously reach the process temperature, the temperature difference value is obtained by debugging the temperature value of the silicon wafer detected by the thermocouple 11 and the temperature value detected by the thermocouple 6, the temperature difference value is set as the temperature deviation compensation value of the temperature value detected by the thermocouple 6, the temperature deviation compensation value is continuously debugged, and the temperature value reflected by the thermocouple 6 is the temperature value of the silicon wafer 8.
Example two:
the difference between this embodiment and the first embodiment is: in the first embodiment, the temperatures of the silicon wafers 8 at different positions in any one silicon wafer group are controlled to reach the same temperature, and then the silicon wafers 8 of different silicon wafer groups are controlled to synchronously reach a process temperature value; in the embodiment, the temperature value of the silicon wafer 8 is detected by debugging the thermocouple 11, and the silicon wafers 8 at different positions in any silicon wafer group are directly heated to the process temperature through the electric furnace wire.
In other embodiments, several silicon wafers 8 may be stacked in the axial direction of the quartz tube 3.
It is to be understood that the described embodiments are merely a few embodiments of the utility model, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Claims (10)
1. An indirect temperature control device for a high-temperature silicon wafer is characterized in that: the temperature compensation device comprises at least one group of debugging thermocouples and thermocouples, wherein the debugging thermocouples are used for detecting the temperature values of silicon wafers, the thermocouples are used for detecting the temperature values of the areas where the quartz tubes and the electric furnace wire assemblies are located, and the difference value between the temperature values detected by the debugging thermocouples and the temperature values detected by the thermocouples is set as the temperature deviation compensation value of the thermocouples.
2. The indirect temperature control device for the high-temperature silicon wafer according to claim 1, wherein: the quartz tube is arranged in a hearth of the furnace body, a heat insulation material and an electric furnace wire assembly are arranged in the hearth, a reaction chamber is arranged in the quartz tube, the silicon wafer is positioned in the reaction chamber, a furnace door is arranged at one end of the quartz tube, and the reaction chamber is formed into a closed high-temperature vacuum space by the furnace door.
3. The indirect temperature control device for the high-temperature silicon wafer according to claim 1, wherein: the electric furnace wire component is composed of a plurality of independently controlled electric furnace wires, the electric furnace wires are distributed along the length direction of the quartz tube, so that the temperatures of the silicon wafers in different silicon wafer groups in the length direction of the quartz tube synchronously reach the process temperature, or/and the electric furnace wires are distributed along the circumferential direction of the quartz tube, so that the temperatures of the silicon wafers in different positions of the same silicon wafer group synchronously reach the same temperature value or the same process temperature value.
4. The indirect temperature control device for the high-temperature silicon wafer according to claim 2, wherein: the silicon wafers are stacked and installed to form silicon wafer groups, the silicon wafer groups are sequentially distributed at intervals along the length direction of the quartz tube, and one silicon wafer group is formed by stacking the silicon wafers in the radial direction of the quartz tube.
5. The indirect temperature control device for the high-temperature silicon wafer according to claim 4, wherein: silicon wafer gaps are formed between adjacent silicon wafers in the silicon wafer group, the silicon wafer gaps of different silicon wafer groups correspond to one another, the debugging thermocouple is inserted into the reaction cavity along the direction of the furnace door or the direction of the furnace tail, and the silicon wafer gaps corresponding to the silicon wafer groups are sequentially inserted.
6. The indirect temperature control device for the high-temperature silicon wafer according to claim 1, which is characterized in that: the debugging thermocouple is fixedly provided with a plurality of detection points, the detection points are distributed along the length direction of the debugging thermocouple, and the number of the detection points is matched with that of the silicon wafer groups of the quartz tube.
7. The indirect temperature control device for the high-temperature silicon wafer according to claim 2, wherein: the thermocouple is arranged in the furnace body, penetrates through the heat insulation material and the electric furnace wire assembly, extends into the hearth and is positioned on the outer side of the quartz tube.
8. The indirect temperature control device for the high-temperature silicon wafer according to claim 5, wherein: the debugging thermocouples are arranged in multiple groups, the multiple groups of debugging thermocouples are inserted into the reaction chamber along the direction of the furnace door or the furnace tail and are inserted into the silicon wafer gaps, and the multiple groups of debugging thermocouples are used for detecting the temperatures of the silicon wafers at different positions in the length direction of the reaction chamber and the temperatures of the silicon wafers at different positions of the silicon wafer group.
9. The indirect temperature control device for the high-temperature silicon wafer according to claim 4, wherein: the thermocouples are arranged in multiple groups, are uniformly distributed along the length direction of the furnace body and are used for detecting the temperatures of different positions of the hearth, and the number and the positions of the thermocouples are matched with those of the silicon wafer groups.
10. The indirect temperature control device for the high-temperature silicon wafer according to claim 2, wherein: and a plurality of silicon wafers are stacked along the axial direction of the quartz tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123397671.0U CN216898402U (en) | 2021-12-30 | 2021-12-30 | Indirect temperature regulating device for high-temperature silicon wafer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123397671.0U CN216898402U (en) | 2021-12-30 | 2021-12-30 | Indirect temperature regulating device for high-temperature silicon wafer |
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| CN216898402U true CN216898402U (en) | 2022-07-05 |
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| CN202123397671.0U Active CN216898402U (en) | 2021-12-30 | 2021-12-30 | Indirect temperature regulating device for high-temperature silicon wafer |
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- 2021-12-30 CN CN202123397671.0U patent/CN216898402U/en active Active
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Inventor after: Lin Jiaji Inventor after: Guo Yongsheng Inventor after: Zhang Wu Inventor after: Pang Aisuo Inventor after: Zhu Tairong Inventor before: Lin Jiaji Inventor before: Guo Yongsheng Inventor before: Jiang Yi Inventor before: Pang Aisuo Inventor before: Zhu Tairong |