CN216793711U - Flip LED chip and display device - Google Patents
Flip LED chip and display device Download PDFInfo
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- CN216793711U CN216793711U CN202123386660.2U CN202123386660U CN216793711U CN 216793711 U CN216793711 U CN 216793711U CN 202123386660 U CN202123386660 U CN 202123386660U CN 216793711 U CN216793711 U CN 216793711U
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Abstract
The application discloses flip-chip LED chip and display device, relate to display element and display device technical field, in the technical scheme that this application provided, the printing opacity that arranges the array on the substrate goes out the plain noodles divides for first arrangement district and second arrangement district, wherein, the printing opacity protrudes to the coverage rate of going out the plain noodles in first arrangement district and is greater than the printing opacity protrudes to the coverage rate of going out the plain noodles in the second arrangement district, simultaneously, first arrangement district is located the central part of going out the plain noodles again, the printing opacity that goes out the plain noodles central part and arranges is protruding more densely than the printing opacity that goes out the plain noodles edge part and arrange, the light that central part that goes out the light of plain noodles positive direction is stronger most can be reflected or change the transmission of light outgoing path, compare in relevant technical scheme, the light intensity of chip lateral part is more ideal.
Description
Technical Field
The application relates to the technical field of display elements and display equipment, in particular to a flip LED chip and a display device.
Background
The LED chip has the advantages of high brightness, long life, small size, low power consumption, and the like, and is widely applied in the technical field of display devices such as display panels. In the field of led technology, under different conditions, different requirements are imposed on the light shape and light angle of the led, for example, the led is required to have a larger light angle.
Chinese utility model patent publication No. CN109244222A discloses an LED chip with a large light-emitting angle, which mainly utilizes a light-transmitting protrusion to partially reflect light or change the transmission of the light-emitting path, so that more light is emitted from the side of the flip-chip LED chip, and the light-emitting angle of the LED chip is enlarged. However, in the above technical solution, the light emitted from the central portion of the light-emitting surface of the substrate in the positive direction is greater than the light emitted from the edge portion of the light-emitting surface, but the light-transmitting protrusions are uniformly distributed on the light-emitting surface, so that a large portion of the light still passes through the central portion of the light-emitting surface and is emitted in the positive direction, the light-transmitting protrusions are unreasonably distributed, and the light intensity of the light emitted from the side portion of the chip is weak.
SUMMERY OF THE UTILITY MODEL
In conclusion, the technical problem to be solved by the present application is to provide a flip LED chip, which has reasonable distribution of the light-transmitting protrusions and more ideal light intensity of the light emitted from the side portion.
In order to solve the above technical problem, the technical solution adopted in this embodiment is:
in a first aspect, the present application provides a flip LED chip comprising:
the light-emitting diode comprises a substrate, a light-emitting surface and a light-facing surface, wherein the light-emitting surface and the light-facing surface are arranged in a back-to-back manner;
the light-emitting structure is arranged on the light-facing surface and is used for emitting light rays with preset wavelengths;
the lower reflecting layer is arranged on one surface of the light-emitting structure, which is back to the substrate;
the light-transmitting protrusions are in a protruding shape along a direction far away from the substrate and are arranged on the light-emitting surface in an array mode at intervals, the array formed by the light-transmitting protrusions at least comprises a first arrangement area and a second arrangement area, the first arrangement area is arranged in the center of the light-emitting surface, the second arrangement area is arranged on the outer side of the first arrangement area, and the coverage rate of the light-transmitting protrusions in the first arrangement area on the light-emitting surface is larger than the coverage rate of the light-transmitting protrusions in the second arrangement area on the light-emitting surface.
Optionally, in some embodiments of the present application, the second arrangement area surrounds the first arrangement area and is disposed at an edge of the light emitting surface.
Optionally, in some embodiments of the present application, a cross section of the light-transmitting protrusion perpendicular to the light exit surface is in a shape of any one of an arch, a trapezoid, and a triangle, or a combination of any several of the arches.
Optionally, in some embodiments of the present application, the light-transmitting protrusions have the same size and shape, a first distance is provided between any two adjacent light-transmitting protrusions in the first arrangement region, and a second distance is provided between any two adjacent light-transmitting protrusions in the second arrangement region, where the first distance is smaller than the second distance.
Optionally, in this embodiment of the present application, each of the light-transmitting protrusions includes a semi-transmissive semi-reflective metal layer and an upper reflective layer, and the semi-transmissive semi-reflective metal layer and the upper reflective layer are sequentially stacked in a direction away from the light-emitting surface, wherein the lower reflective layer reflects part of the light reflected by the light-transmitting protrusions back to the light-transmitting protrusions, so that the light is emitted after resonance enhancement.
Optionally, in some embodiments of the present application, the upper reflective layer includes at least one refractive layer, and there is one refractive layer connected to the transflective metal layer and having a refractive index higher than that of the transflective metal layer.
Optionally, in some embodiments of the present application, the upper reflective layer includes a plurality of refractive layers stacked in sequence, refractive indexes of two adjacent refractive layers are different, and each refractive layer is alternately arranged in a high refractive index refractive layer and a low refractive index refractive layer along a direction away from the light exit surface.
Optionally, in some embodiments of the present application, the light emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer in this order, conductivity types of the first semiconductor layer and the second semiconductor layer are opposite to each other, the first semiconductor layer, the active layer, and the second semiconductor layer are stacked in this order on the light-facing surface, and the light emitting structure further includes a first electrode and a second electrode, the first electrode is connected to the first semiconductor layer, and the second electrode is connected to the second semiconductor layer.
Optionally, in some embodiments of the present application, a first through hole and a second through hole are disposed on the lower reflective layer, the first electrode protrudes out of the lower reflective layer through the first through hole, and the second electrode protrudes out of the lower reflective layer through the second through hole.
In a second aspect, the present application provides a display device comprising a flip-chip LED chip as described in the first aspect.
In conclusion, due to the adoption of the technical scheme, the application at least comprises the following beneficial effects:
the flip LED chip provided by the application is mainly optimized and improved in the arrangement mode of the light-transmitting bulges, in the technical scheme provided by the application, the light-transmitting bulges arranged on the light-emitting surface of the substrate in an array mode are divided into a first arrangement area and a second arrangement area, wherein the coverage rate of the light-transmitting bulges on the light-emitting surface in the first arrangement area is greater than that of the light-transmitting bulges on the light-emitting surface in the second arrangement area, meanwhile, the first arrangement area is positioned in the central part of the light-emitting surface, the light-transmitting bulges arranged in the central part of the light-emitting surface are more dense than the light-transmitting bulges arranged in the edge part of the light-emitting surface, and the light emitted from the central part with stronger light-emitting surface in the positive direction of the light-emitting surface can be reflected or the transmission of a light-emitting path can be changed by most of the light-transmitting bulges, compared with the related technical scheme, the light-transmitting bulges are more reasonable in distribution and are matched with the actual light-emitting condition of the chip, the light intensity at the side of the chip is more ideal.
Drawings
To more clearly illustrate the technical solutions of the embodiments of the present application, the drawings of the embodiments will be briefly described below, and it should be apparent that the drawings in the following description only relate to some embodiments of the present application and are not limiting of the present application, wherein:
fig. 1 is a schematic cross-sectional view of a flip-chip LED chip according to embodiment 1 of the present invention;
fig. 2 is a schematic diagram illustrating a division of a first arrangement area and a second arrangement area on a light-emitting surface of a substrate in embodiment 1 provided by the present invention;
FIG. 3 is a schematic cross-sectional view of a flip-chip LED chip according to another embodiment of the present invention;
fig. 4 is a schematic cross-sectional view of a light-transmissive protrusion in a flip-chip LED chip according to embodiment 1 of the present invention;
fig. 5 is a schematic flow chart of a manufacturing method in embodiment 1 of the utility model.
Detailed Description
The technical solutions in the embodiments of the present application will be described clearly and completely with reference to the drawings in the embodiments of the present application, and it should be understood that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and for simplicity of description, and do not indicate or imply that the referenced devices or elements must have a unique orientation, be constructed and operated in a particular orientation, and therefore should not be considered as limiting the present application. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or including indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more features. In the description of the present application, "plurality" means two or more unless specifically limited otherwise.
In the present application, the word "exemplary" is used to mean "serving as an example, instance, or illustration. Any embodiment described herein as exemplary is not necessarily to be construed as preferred or advantageous over other embodiments. The following description is presented to enable any person skilled in the art to make and use the application. In the following description, details are set forth for the purpose of explanation. It will be apparent to one of ordinary skill in the art that the present application may be practiced without these specific details. In other instances, well-known structures and processes are not shown in detail to avoid obscuring the description of the present application with unnecessary detail. Thus, the present application is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles disclosed herein.
Example 1
Referring to fig. 1, the main body of the present embodiment is a flip LED chip, which includes:
the light-emitting diode comprises a substrate 10, wherein the substrate 10 is provided with a light-emitting surface 11 and a light-facing surface which are arranged in an opposite mode;
the light-emitting structure 30 is arranged on the light-facing surface, and is used for emitting light with a preset wavelength;
the lower reflecting layer 40, the lower reflecting layer 40 is set up on the light-emitting structure 30 back to the one side of the substrate 10;
the light-transmitting protrusions 20 are in a shape protruding in a direction away from the substrate 10 and are arranged on the light-emitting surface 11 in an array at intervals, each light-transmitting protrusion 20 forms an array at least including a first arrangement area 20a and a second arrangement area 20b, the first arrangement area 20a is arranged in the center of the light-emitting surface 11, the second arrangement area 20b is arranged outside the first arrangement area 20a, and the coverage rate of the light-transmitting protrusions 20 on the light-emitting surface 11 in the first arrangement area 20a is greater than the coverage rate of the light-transmitting protrusions 20 on the light-emitting surface 11 in the second arrangement area 20 b.
For the LED chip, the light emitted from the central portion of the light emitting surface 11 in the positive direction is greater than the light emitted from the edge portion of the light emitting surface in the positive direction. Referring to fig. 2, for convenience of illustration, only the areas of the light emitting surface 11 corresponding to the first arrangement area 20a and the second arrangement area 20b are shown in fig. 2. The light-transmitting protrusions 20 arrayed on the light-emitting surface 11 of the substrate 10 are divided into a first arrangement area 20a and a second arrangement area 20b, wherein the coverage rate of the light-transmitting protrusions 20 on the light-emitting surface 11 in the first arrangement area 20a is greater than the coverage rate of the light-transmitting protrusions 20 on the light-emitting surface 11 in the second arrangement area 20b, meanwhile, the first arrangement area 20a is located at the central part of the light-emitting surface 11, the light-transmitting protrusions 20 arranged at the central part of the light-emitting surface 11 are more dense than the light-transmitting protrusions 20 arranged at the edge part of the light-emitting surface 11, and are adapted to the light-emitting condition of the chip, most of light in the positive direction emitted from the central part of the light-emitting surface 11 can be reflected or changed in the transmission of the light-emitting path, and emitted along the side part, and further the light intensity of the light emitted from the side part of the chip is improved.
It can be understood that, in the prior art described above, since the light-transmitting protrusions 20 are uniformly arranged, the central portion of the light-emitting surface 11 has a lot of light rays emitted in the positive direction, and the light rays emitted at the edge of the light-emitting surface 11 are weaker in the positive direction, and the light-transmitting protrusions 20 with higher coverage rate cannot greatly increase the light intensity at the side portions. Compared with the prior art described in the foregoing, the present embodiment rationalizes the arrangement density of the light-transmitting protrusions 20 at different positions, so that part of the light originally emitted in the positive direction of the central portion of the light-emitting surface 11 changes the light-emitting path and the light emitted from the side portion, thereby improving the light intensity of the light emitted from the light-emitting side portion of the chip.
It can also be understood that an implementer can design a pattern on the corresponding light-emitting surface 11 according to the requirement of the actual situation on the light-emitting mode of the chip, and change the light-emitting path regionally, so that light is directly emitted from the pattern region through the light-emitting surface 11, and the light-emitting shape and the light-emitting angle are directly customized and changed.
It should be noted that, the coverage rate described above can reflect the light emitting capability of the chip in the positive direction in the region corresponding to the light emitting surface 11. On the premise that the sizes of the light-transmitting protrusions 20 are consistent, in the area with the unit area on the light-emitting surface 11, the arrangement number of the light-transmitting protrusions 20 is smaller, so that the smaller area of the light-emitting surface 11 is covered by the light-transmitting protrusions 20, more light rays are emitted in the positive direction from the gaps between the light-transmitting protrusions 20, at this time, the light intensity of the light emitted from the light-emitting surface 11 in the positive direction is higher, and the light intensity in the side direction is weaker. Meanwhile, in the area with the unit area on the light emitting surface 11, the more the light transmitting protrusions 20 are arranged, the larger area of the light emitting surface 11 is covered by the light transmitting protrusions 20, more light is reflected by the light transmitting protrusions 20 or emitted with the changed light emitting path, the reflected light is emitted from the side of the chip through reflection, or emitted after being reflected by the lower reflecting layer 40, and therefore the light intensity of the light emitting surface 11 in the positive direction is reduced, and the light intensity of the light in the side direction is improved.
It should be noted that, except for the embodiment shown, the size of each light-transmitting protrusion 20 is consistent. An implementer can also adjust the coverage rate of the light-emitting surface 11 by the light-transmitting protrusions 20 per unit area in the first arrangement area 20a and the second arrangement area 20b by changing the size of the light-transmitting protrusions 20.
More specifically, in the present embodiment, the light-transmitting protrusions 20 have the same size and shape, a first distance is formed between any two adjacent light-transmitting protrusions 20 in the first arrangement area 20a, and a second distance is formed between any two adjacent light-transmitting protrusions 20 in the second arrangement area 20b, wherein the first distance is smaller than the second distance. The implementer may select specific values of the first distance and the second distance according to his own needs, and as long as the first distance is smaller than the second distance, the arrangement numbers of the light-transmitting protrusions 20 in the unit area of the first arrangement area 20a and the second arrangement area 20b are different, so that the coverage rate of the light-transmitting protrusions 20 on the light-emitting surface 11 in the first arrangement area 20a is greater than the coverage rate of the light-transmitting protrusions 20 on the light-emitting surface 11 in the second arrangement area 20 b. Illustratively, the first pitch may be selected to be between 0.5nm and 5nm, and the second pitch may be selected to be between 2 and 10 nm.
The first arrangement region 20a and the second arrangement region 20b may be arranged such that the first arrangement region 20a is disposed at a central portion of the light emitting surface 11 and the second arrangement region 20b is disposed at any side or any several sides of the first arrangement region 20 a. For example, in another embodiment, the second arrangement region 20b is disposed outside one side of the first arrangement region 20 a. For another example, in another embodiment, the second arrangement regions 20b are disposed outside of opposite sides of the first arrangement region 20 a. In the embodiment, the second arrangement area 20b surrounds the first arrangement area 20a and is disposed at the edge of the light emitting surface 11.
Regarding the shape of the light-transmitting protrusion 20, in the present embodiment, the light-transmitting protrusion 20 is in a frustum shape, and the practitioner may specifically set the shape of the light-transmitting protrusion 20 according to his or her own needs, for example, set the light-transmitting protrusion 20: the section of the light source perpendicular to the light emitting surface 11 is in any one of arch shape, trapezoid shape and triangle shape or the combination of any several kinds. This is not a particular limitation in the present application.
Further, it is understood that, with the light-transmissive protrusion 20 as described above, light is partially reflected when entering the light-transmissive protrusion 20 from the substrate 10. Meanwhile, when the light is emitted from the light-transmitting protrusion 20, the outer contour of the protrusion structure is not flat compared with the light-emitting surface 11, so that the path of the light is greatly changed, the change of the light-emitting angle is realized, and the light-emitting direction is prevented from being concentrated into one direction. Referring to fig. 3, taking the hemispherical light-transmitting protrusion 20 adopted in another embodiment as an example, when light is emitted from the spherical surface of the light-transmitting protrusion 20, the light is emitted along various directions. Meanwhile, in the present embodiment, in order to improve the partial reflection effect of the light-transmitting protrusions 20, each of the light-transmitting protrusions 20 includes a transflective metal layer 21 and an upper reflective layer 22, and the transflective metal layer 21 and the upper reflective layer 22 are sequentially stacked along a direction away from the light-emitting surface 11.
Meanwhile, the technical solution provided by this embodiment is to process the transparent protrusion 20 on the flip-chip LED capable of performing resonance enhancement on the light with the preset wavelength. An upper reflection structure (including a half-reflective and half-transmissive film layer and an upper reflection layer sequentially stacked on the light-emitting surface 11 in a full-surface manner) is originally arranged on the light-emitting surface 11 of the substrate 10, and is used for forming an optical resonance structure in cooperation with the lower reflection layer 40 to reinforce light with a preset wavelength. The present embodiment mainly performs patterning on the upper reflective structure to form the light transmissive protrusion 20. It will be appreciated that although the light-transmissive protrusions 20 reduce the coverage of the upper reflective structure, the upper reflective structure is still capable of resonating. Therefore, in the present embodiment, the lower reflective layer 40 reflects part of the light reflected by the transparent protrusions 20 back to the transparent protrusions 20, so that the light is emitted after the resonance in the resonant structure is enhanced.
Here, the light of the predetermined wavelength mainly refers to the light expected to be emitted by the light emitting structure 30 when it is powered on. The flip LED chip generally emits light with different wavelengths according to the light emitting structure 30. In particular, the light of the predetermined wavelength indicated above may be red, blue or yellow light, among other light emissions desired. The resonant structures described in the foregoing are configured to be adapted to a preset wavelength, that is, the resonant structures can be roughly classified into a resonant structure for enhancing red light, a resonant structure for enhancing blue light, and a resonant structure for enhancing yellow light. In detail, the optical distance between the upper reflective structure and the lower reflective layer 40 in the resonant structure is different according to the wavelength of light. In the related art, some contents of forming the optical resonance structure by using the upper reflection structure and the lower reflection layer 40 have been disclosed, so the present application does not give a description about the optical pitch and the like as described above.
Please refer toReferring to fig. 4, in the present embodiment, the half-transmissive and half-reflective metal layer 21 is mainly provided to form resonance, and the half-transmissive and half-reflective metal layer 21 has a lower light absorption rate, and can reflect a greater amount of light, thereby improving the resonance effect of the resonance structure, and in addition, the half-transmissive and half-reflective metal layer 21 has a characteristic of better flatness. The transflective metal layer 21 may be a single layer of Al/Pt/Ag or a laminated structure of any of A l/Pt/Ag, and the thickness of the layer may be relatively thin (e.g., thin)
To
) So that the metal layer is in a semi-transmission and semi-reflection state. Of course, the practitioner may omit the transflective metal layer 21. For example, in another embodiment, each of the light-transmissive protrusions 20 includes only the upper reflective layer 22 stacked on the light-emitting surface 11.
More specifically, in the present embodiment, the upper reflective layer 22 includes at least one refractive layer, and there is one refractive layer connected to the transflective metal layer 21 and having a refractive index higher than that of the transflective metal layer 21. Because the refraction layer is connected with the semi-transmission semi-reflection metal layer 21 and the refraction index of the refraction layer is higher than that of the semi-transmission semi-reflection metal layer 21, the emergent light can be strongly reflected at the position, and the resonance effect of the resonance structure is further improved.
It is understood that the upper reflective layer 22 may be provided with only one or more refractive layers, and in this embodiment, in addition to the refractive layers connected to the transflective metal layer 21 as described above, the upper reflective layer 22 further includes a plurality of refractive layers stacked in sequence, and the refractive layers of two adjacent layers have different refractive indexes, so that the upper reflective layer 22 constitutes a bragg reflective layer to enhance the reflective effect.
In detail, the refractive layers are alternately arranged in a direction away from the light emitting surface 11, namely, a high refractive index refractive layer and a low refractive index refractive layerA high refractive index refractive layer means a refractive index higher than that of an adjacent low refractive index refractive layer, and a corresponding low refractive index refractive layer means a refractive index lower than that of an adjacent high refractive index refractive layer. Wherein the high refractive index refraction layer can be TiO or TiO2、Ti3O5、HfO2、ZrO2And the low refractive index refraction layer may be SiO2、SiNXAnd (5) preparing the film layer.
In this embodiment, the lower reflective layer 40 adopts a bragg reflective layer structure, the reflectivity of the bragg reflective layer structure is higher than that of the upper reflective layer 22, and the lower reflective layer 40, the semi-transmissive semi-reflective metal layer 21 and the upper reflective layer 22 are disposed between two sides of the active layer 32 to form an optical resonance structure, so as to enhance the light emission and improve the color purity of the light emission.
More specifically, regarding the light emitting structure 30, in the present embodiment, the light emitting structure 30 includes a first semiconductor layer 31, an active layer 32, and a second semiconductor layer 33 sequentially stacked and connected on a light facing side of the substrate 10, the conductivity types of the first semiconductor layer 31 and the second semiconductor layer 33 are opposite to each other, the first semiconductor layer 31, the active layer 32, and the second semiconductor layer 33 are sequentially stacked on the substrate 10, the light emitting structure 30 further includes a first electrode 51 and a second electrode 52, the first electrode 51 is connected to the first semiconductor layer 31, and the second electrode 52 is connected to the second semiconductor layer 33.
The first semiconductor layer 31 is an N-type semiconductor layer, the second semiconductor layer 33 is a P-type semiconductor layer, the corresponding first electrode 51 is an N-type electrode, and the second electrode 52 is a P-type electrode. Correspondingly, the lower reflective layer 40 is provided with a first through hole and a second through hole, the first electrode 51 extends out of the lower reflective layer 40 through the first through hole, and the second electrode 52 extends out of the lower reflective layer 40 through the second through hole. The first electrode 51 and the second electrode 52 extend beyond the lower reflective layer 40 to form a pad portion.
Referring to fig. 5, the present embodiment further provides a method for manufacturing the flip LED chip, which includes the steps of:
s1, providing a substrate 10, wherein the substrate 10 is provided with a light emitting surface 11 and a light facing surface which are arranged oppositely;
s2, sequentially depositing a first semiconductor layer 31, an active layer 32 and a second semiconductor layer 33 on the light-facing surface of the substrate 10;
s3, depositing the semi-transmission semi-reflection metal layer 21 and the upper reflection layer 22 on the light-emitting surface 11 of the substrate 10 in sequence;
s4, etching the parts of the half-transmitting half-reflecting metal layer 21 and the upper reflecting layer 22 corresponding to the central part of the light emitting surface 11 to form the light-transmitting protrusions 20 located in the first arrangement area 20a and arranged in an array at intervals;
s5, etching the parts of the half-transmissive half-reflective metal layer 21 and the upper reflective layer 22 corresponding to the outer side of the central part of the light emitting surface 11 to form the light transmissive protrusions 20 located in the second arrangement area 20b and arranged in an array at intervals, wherein the coverage rate of the light transmissive protrusions 20 on the light emitting surface 11 in the first arrangement area 20a is greater than the coverage rate of the light transmissive protrusions 20 on the light emitting surface 11 in the second arrangement area 20 b;
and S6, cutting to form core particles.
In step S4, an implementer may dispose a second photoresist on the light emitting surface 11 of the substrate 10 to cover the second layout area 20b, and then expose and develop the first layout area 20a, thereby etching and forming the light-transmissive protrusions 20 arranged in the first layout area 20 a. Then, in step S5, a first photoresist is disposed on the light emitting surface 11 of the substrate 10 to correspondingly cover the first arrangement region 20a, and then the second arrangement region 20b is etched, so as to form the light-transmissive protrusions 20 arranged in the second arrangement region 20 b.
It should be noted that the first photoresist and the second photoresist are both positive photoresists as described above. Of course, the practitioner may also use a negative photoresist to implement the fabrication of the light-transmissive protrusion 20, which is not particularly limited in this application.
Example 2
Embodiment 2 provides a display device including a display panel including the flip LED chip as described in embodiment 1. It is understood that the display device provided in this embodiment may be any display device with a flip LED chip, such as a tablet, a mobile phone, a VR, a computer screen, etc., and the implementer may select the display device according to his own requirements, which is not limited in this application.
Having thus described the basic concept, it will be apparent to those skilled in the art that the foregoing detailed disclosure is to be considered merely illustrative and not restrictive of the broad application. Various modifications, improvements and adaptations to the present application may occur to those skilled in the art, although not explicitly described herein. Such modifications, improvements and adaptations are proposed in the present application and thus fall within the spirit and scope of the exemplary embodiments of the present application.
Also, this application uses specific language to describe embodiments of the application. Reference to "one embodiment," "an embodiment," and/or "some embodiments" means a feature, structure, or characteristic described in connection with at least one embodiment of the application. Therefore, it is emphasized and should be appreciated that two or more references to "an embodiment" or "one embodiment" or "an alternative embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, certain features, structures, or characteristics may be combined as suitable in one or more embodiments of the application.
Similarly, it should be noted that in the preceding description of embodiments of the application, various features are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure aiding in the understanding of one or more of the embodiments. This method of disclosure, however, is not intended to require more features than are expressly recited in the claims. Indeed, the embodiments may be characterized as having less than all of the features of a single embodiment disclosed above.
Numerals describing the number of components, attributes, etc. are used in some embodiments, it being understood that such numerals used in the description of the embodiments are modified in some instances by the use of the modifier "about", "approximately" or "substantially". Unless otherwise indicated, "about", "approximately" or "substantially" indicates that the number allows for a variation of + -%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximations that may vary depending upon the desired properties of the individual embodiments. In some embodiments, the numerical parameter should take into account the specified significant digits and employ a general digit preserving approach. Notwithstanding that the numerical ranges and parameters setting forth the broad scope of the range are approximations, in the specific examples, such numerical values are set forth as precisely as possible within the scope of the application.
For each patent, patent application publication, and other material cited in this application, such as articles, books, specifications, publications, documents, and the like, the entire contents of which are hereby incorporated by reference into this application, except for application history documents that are inconsistent with or conflict with the contents of this application, and except for documents that are currently or later become incorporated into this application as though fully set forth in the claims below. It is to be understood that the descriptions, definitions and/or uses of terms in the attached materials of this application shall control if they are inconsistent or inconsistent with this application.
Claims (10)
1. A flip LED chip, comprising:
the light emitting device comprises a substrate, a light emitting layer and a light receiving layer, wherein the light emitting layer and the light receiving layer are arranged in a back-to-back mode;
the light-emitting structure is arranged on the light-facing surface and is used for emitting light rays with preset wavelengths;
the lower reflecting layer is arranged on one surface of the light-emitting structure, which is back to the substrate;
the light-transmitting protrusions are in a protruding shape along a direction far away from the substrate and are arranged on the light-emitting surface in an array mode at intervals, the array formed by the light-transmitting protrusions at least comprises a first arrangement area and a second arrangement area, the first arrangement area is arranged in the center of the light-emitting surface, the second arrangement area is arranged on the outer side of the first arrangement area, and the coverage rate of the light-transmitting protrusions in the first arrangement area on the light-emitting surface is larger than the coverage rate of the light-transmitting protrusions in the second arrangement area on the light-emitting surface.
2. The flip LED chip of claim 1, wherein the second layout region surrounds the first layout region and is disposed at an edge of the light emitting surface.
3. The flip-chip LED chip of claim 1, wherein a cross section of the light-transmissive protrusion perpendicular to the light exit surface is in a shape of any one or a combination of any several of a bow, a trapezoid, and a triangle.
4. The flip-chip LED chip of claim 1, wherein the light-transmissive protrusions are substantially identical in size and shape, and wherein a first pitch is provided between any two adjacent light-transmissive protrusions in the first layout area, and a second pitch is provided between any two adjacent light-transmissive protrusions in the second layout area, wherein the first pitch is smaller than the second pitch.
5. The flip-chip LED chip of claim 1, wherein each of the light-transmissive protrusions comprises a semi-transmissive and semi-reflective metal layer and an upper reflective layer, the semi-transmissive and semi-reflective metal layer and the upper reflective layer being sequentially stacked in a direction away from the light-emitting surface, wherein the lower reflective layer reflects a portion of the light reflected by the light-transmissive protrusions back to the light-transmissive protrusions, thereby enhancing the resonance of the light and emitting the light.
6. The flip LED chip of claim 5, wherein the upper reflective layer comprises at least one refractive layer, there being one layer of the refractive layer coupled to the transflective metal layer and having a refractive index configured to be higher than the transflective metal layer.
7. The flip LED chip of claim 5, wherein the upper reflective layer comprises a plurality of refractive layers stacked in sequence, the refractive index of two adjacent refractive layers is different, and each refractive layer is alternately arranged in a high refractive index refractive layer and a low refractive index refractive layer along a direction away from the light exit surface.
8. The flip LED chip of claim 1, wherein the light emitting structure comprises a first semiconductor layer, an active layer, and a second semiconductor layer in sequence, the first semiconductor layer and the second semiconductor layer have opposite conductivity types from each other, the first semiconductor layer, the active layer, and the second semiconductor layer are stacked in sequence on the light-facing surface, the light emitting structure further comprises a first electrode and a second electrode, the first electrode is connected to the first semiconductor layer, and the second electrode is connected to the second semiconductor layer.
9. The flip LED chip of claim 8, wherein the lower reflective layer has a first via and a second via, the first electrode extends out of the lower reflective layer through the first via, and the second electrode extends out of the lower reflective layer through the second via.
10. A display device comprising the flip LED chip according to any one of claims 1 to 9.
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| CN202123386660.2U CN216793711U (en) | 2021-12-30 | 2021-12-30 | Flip LED chip and display device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202123386660.2U CN216793711U (en) | 2021-12-30 | 2021-12-30 | Flip LED chip and display device |
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| CN216793711U true CN216793711U (en) | 2022-06-21 |
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